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JPS54141699A - Chemically responding element - Google Patents

Chemically responding element

Info

Publication number
JPS54141699A
JPS54141699A JP4960278A JP4960278A JPS54141699A JP S54141699 A JPS54141699 A JP S54141699A JP 4960278 A JP4960278 A JP 4960278A JP 4960278 A JP4960278 A JP 4960278A JP S54141699 A JPS54141699 A JP S54141699A
Authority
JP
Japan
Prior art keywords
source
layer
type
electrode
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4960278A
Other languages
Japanese (ja)
Other versions
JPS6113180B2 (en
Inventor
Kiyozo Koshiishi
Hironobu Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP4960278A priority Critical patent/JPS54141699A/en
Publication of JPS54141699A publication Critical patent/JPS54141699A/en
Publication of JPS6113180B2 publication Critical patent/JPS6113180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To easily maintain the specified relation between the source-drain current and the concentration of a specific substance in solution, by providing a gate electrolde to bias the insulation gate regions, and making it possible to change the operating point freely.
CONSTITUTION: In FET type chemically responding element consisting of p-type Si substrate 21, insulation layer 24 composed of n-type source region 22 and n-type drain region 23 made from SiO2, conductors 25, 26, insolation layer 27 made from Si3N4, and chemical selective layer 29, a gate electrode 30 is provided in a layer 27 beneath a channel region 28. Thereby, besides the bias due to voltage source 31, another bias is applied to the electrode 30, so that the relation between the concentration, activity, and other characteristics of a specific substance in sample solution 11 and the current flowing in an ammeter 32 may be adjusted. Further, when a switch 33 is changed to the side of a contact 34, a negative voltage is applied to the electrode 30, shutting the source and drain of the element. As a result, undesired large current does not flow even when pulling up the element from the solution, so that destruction and deterioration of the element may be prevented.
COPYRIGHT: (C)1979,JPO&Japio
JP4960278A 1978-04-26 1978-04-26 Chemically responding element Granted JPS54141699A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4960278A JPS54141699A (en) 1978-04-26 1978-04-26 Chemically responding element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4960278A JPS54141699A (en) 1978-04-26 1978-04-26 Chemically responding element

Publications (2)

Publication Number Publication Date
JPS54141699A true JPS54141699A (en) 1979-11-05
JPS6113180B2 JPS6113180B2 (en) 1986-04-11

Family

ID=12835774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4960278A Granted JPS54141699A (en) 1978-04-26 1978-04-26 Chemically responding element

Country Status (1)

Country Link
JP (1) JPS54141699A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60168043A (en) * 1984-02-10 1985-08-31 Sharp Corp Field effect type sensor
JPS60242354A (en) * 1984-05-16 1985-12-02 Sharp Corp Fet type sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358098A (en) * 1986-08-29 1988-03-12 Suupaa Hiitoponpu Energ Shiyuuseki Syst Gijutsu Kenkyu Kumiai Plate fin type vaporizer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60168043A (en) * 1984-02-10 1985-08-31 Sharp Corp Field effect type sensor
JPH0415902B2 (en) * 1984-02-10 1992-03-19 Sharp Kk
JPS60242354A (en) * 1984-05-16 1985-12-02 Sharp Corp Fet type sensor
JPH0376860B2 (en) * 1984-05-16 1991-12-06 Sharp Kk

Also Published As

Publication number Publication date
JPS6113180B2 (en) 1986-04-11

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