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JPS54127280A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54127280A
JPS54127280A JP3511678A JP3511678A JPS54127280A JP S54127280 A JPS54127280 A JP S54127280A JP 3511678 A JP3511678 A JP 3511678A JP 3511678 A JP3511678 A JP 3511678A JP S54127280 A JPS54127280 A JP S54127280A
Authority
JP
Japan
Prior art keywords
layer
metal layer
semiconductor device
reliability
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3511678A
Other languages
Japanese (ja)
Other versions
JPS5735588B2 (en
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3511678A priority Critical patent/JPS54127280A/en
Publication of JPS54127280A publication Critical patent/JPS54127280A/en
Publication of JPS5735588B2 publication Critical patent/JPS5735588B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the reliability and manufacture yield with the airtight strength of an Au layer improved, by interposing a Ti layer between the Mo layer and Au layer of a semiconductor device with a Schottky barrier.
CONSTITUTION: On the surface of low-resistivity GaAs substrate 1 of one conduction type, GaAs epitaxial layer 2 of the same conduction type as substrate 1 is formed. After insulation film 3 is formed, Schottky barrier metal layer 4 made with Ti and metal layer 5 made with Mo are both formed. Next, wiring metal layer 6 made with Au is formed after metal layer 7 made of a Ti layer. Since Ti is excellent in the airtightness with Mo and Au, Au layer 6 will not break away in a bonding process, so that the reliability will improve.
COPYRIGHT: (C)1979,JPO&Japio
JP3511678A 1978-03-27 1978-03-27 Semiconductor device Granted JPS54127280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3511678A JPS54127280A (en) 1978-03-27 1978-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3511678A JPS54127280A (en) 1978-03-27 1978-03-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54127280A true JPS54127280A (en) 1979-10-03
JPS5735588B2 JPS5735588B2 (en) 1982-07-29

Family

ID=12432948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3511678A Granted JPS54127280A (en) 1978-03-27 1978-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54127280A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846641A (en) * 1981-09-14 1983-03-18 Fujitsu Ltd Manufacture of semiconductor device
JPS5877258A (en) * 1981-11-04 1983-05-10 Hitachi Ltd High reliable metal electrode
JPS60189974A (en) * 1984-03-09 1985-09-27 Sanyo Electric Co Ltd Schottky barrier type semiconductor device
US4612560A (en) * 1983-05-10 1986-09-16 Thomson-Csf Field effect transistor operating in the enhancement mode
JPH0955517A (en) * 1995-08-10 1997-02-25 Nec Corp Multilayered metal schottky electrode
US6303969B1 (en) * 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
JP2020202345A (en) * 2019-06-13 2020-12-17 三菱電機株式会社 Semiconductor device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846641A (en) * 1981-09-14 1983-03-18 Fujitsu Ltd Manufacture of semiconductor device
JPS5877258A (en) * 1981-11-04 1983-05-10 Hitachi Ltd High reliable metal electrode
US4612560A (en) * 1983-05-10 1986-09-16 Thomson-Csf Field effect transistor operating in the enhancement mode
JPS60189974A (en) * 1984-03-09 1985-09-27 Sanyo Electric Co Ltd Schottky barrier type semiconductor device
JPH0955517A (en) * 1995-08-10 1997-02-25 Nec Corp Multilayered metal schottky electrode
US6303969B1 (en) * 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
JP2020202345A (en) * 2019-06-13 2020-12-17 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US11935919B2 (en) 2019-06-13 2024-03-19 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5735588B2 (en) 1982-07-29

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