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JPS54112179A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54112179A
JPS54112179A JP2001278A JP2001278A JPS54112179A JP S54112179 A JPS54112179 A JP S54112179A JP 2001278 A JP2001278 A JP 2001278A JP 2001278 A JP2001278 A JP 2001278A JP S54112179 A JPS54112179 A JP S54112179A
Authority
JP
Japan
Prior art keywords
region
type
protective diode
dielectric strength
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001278A
Other languages
Japanese (ja)
Other versions
JPS6252469B2 (en
Inventor
Hidemi Takakuwa
Akiyasu Ishitani
Yoshihiro Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001278A priority Critical patent/JPS54112179A/en
Publication of JPS54112179A publication Critical patent/JPS54112179A/en
Publication of JPS6252469B2 publication Critical patent/JPS6252469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To evade a decrease in dielectric strength by making the dielectric strength of a protective diode higher than that of an IGFET, by providing the PN junction of the protective diode deeply when providing the IGFET and protective diode for it to the same semiconductor substrate. CONSTITUTION:In N<->-type Si substrate 1, P-type base region 2 is formed by diffusion and into it, N-type source region 3 is provided; and channel part C is made of them and SiO2 gate insulation layer is adhered to its surface, thereby obtaining an IGFET. Next, P<->-type region 14 is of the same P type, but formed by diffusion more deeply than region 2 besides region 2, P-type regions 15 and 16 are provided into it, and N<+>-type region 17 in region 15 and N<+>-type region 18 in region 16 are formed by diffusion respectively to constitute a protective diode. In this way, since the depth of junction Js produced in the protective diode is made deeper than that of PN junction J of the FET, the dielectric strength of Js becomes higher than that of J and even if the protective diode is provided into the same substrate, the dielectric strength of the FET is not caused to decrease.
JP2001278A 1978-02-23 1978-02-23 Semiconductor device Granted JPS54112179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001278A JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001278A JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54112179A true JPS54112179A (en) 1979-09-01
JPS6252469B2 JPS6252469B2 (en) 1987-11-05

Family

ID=12015192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001278A Granted JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54112179A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263845A (en) * 1984-06-13 1985-12-27 Nohmi Bosai Kogyo Co Ltd Gas detecting element and its production
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
JPS62186565A (en) * 1986-02-12 1987-08-14 Mitsubishi Electric Corp Field effect type semiconductor device
US4689647A (en) * 1983-11-30 1987-08-25 Kabushiki Kaisha Toshiba Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
JPS62211954A (en) * 1986-03-13 1987-09-17 Matsushita Electronics Corp Semiconductor device
JPS6323062A (en) * 1986-07-15 1988-01-30 Aisin Seiki Co Ltd Lock-up clutch control method for vehicle automatic transmission unit
JPS63129671A (en) * 1986-11-12 1988-06-02 シリコニックス・インコーポレイテッド Vertical dmos cell construction
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
JPS648674A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Vertical mos-fet
JPH01157573A (en) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5191395A (en) * 1990-04-02 1993-03-02 Fuji Electric Co., Ltd. Mos type semiconductor device with means to prevent parasitic bipolar transistor
US5563436A (en) * 1992-11-24 1996-10-08 Sgs-Thomson Microelectronics S.A. Forward overvoltage protection circuit for a vertical semiconductor component
US6674123B2 (en) 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141745U (en) * 1989-04-28 1990-11-29

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (en) * 1972-07-22 1974-03-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (en) * 1972-07-22 1974-03-25

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4689647A (en) * 1983-11-30 1987-08-25 Kabushiki Kaisha Toshiba Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
JPH0418258B2 (en) * 1984-06-13 1992-03-27 Nobi Bosai Kk
JPS60263845A (en) * 1984-06-13 1985-12-27 Nohmi Bosai Kogyo Co Ltd Gas detecting element and its production
JPS62186565A (en) * 1986-02-12 1987-08-14 Mitsubishi Electric Corp Field effect type semiconductor device
JPS62211954A (en) * 1986-03-13 1987-09-17 Matsushita Electronics Corp Semiconductor device
JPS6323062A (en) * 1986-07-15 1988-01-30 Aisin Seiki Co Ltd Lock-up clutch control method for vehicle automatic transmission unit
JPS63129671A (en) * 1986-11-12 1988-06-02 シリコニックス・インコーポレイテッド Vertical dmos cell construction
JPS648674A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Vertical mos-fet
JPH01157573A (en) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5191395A (en) * 1990-04-02 1993-03-02 Fuji Electric Co., Ltd. Mos type semiconductor device with means to prevent parasitic bipolar transistor
US5563436A (en) * 1992-11-24 1996-10-08 Sgs-Thomson Microelectronics S.A. Forward overvoltage protection circuit for a vertical semiconductor component
US6674123B2 (en) 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region
US12057473B2 (en) 2020-09-30 2024-08-06 Infineon Technologies Ag Silicon carbide device with transistor cell and clamp regions in a well region

Also Published As

Publication number Publication date
JPS6252469B2 (en) 1987-11-05

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