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JPS54111788A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS54111788A
JPS54111788A JP1948978A JP1948978A JPS54111788A JP S54111788 A JPS54111788 A JP S54111788A JP 1948978 A JP1948978 A JP 1948978A JP 1948978 A JP1948978 A JP 1948978A JP S54111788 A JPS54111788 A JP S54111788A
Authority
JP
Japan
Prior art keywords
electrode
operation layer
source
drain
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1948978A
Other languages
Japanese (ja)
Inventor
Masaaki Nakatani
Yasuro Mitsui
Manabu Watase
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1948978A priority Critical patent/JPS54111788A/en
Publication of JPS54111788A publication Critical patent/JPS54111788A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the dielectric strength of source and drain, by shortening the length toward gate width at the end of source electrode at the channel side of planar type FET operation layer than that of the drain electrode end corresponding.
CONSTITUTION: To shorten the length broadwise the gate 5 of the source electrode end 3 in contact with the channel of the thin operation layer 2 on the semi-insulation substrate 1 than that of the end 41 of the drain electrode opposing, the pattern of the electrode 3 is taken as E-shape, and the operation layer 2 of concave of E-shaped type can be removed. With this construction, no lines of electric field 7 are put in the surface of concave 31 of the source electrode 3 and essentially they are reduced, then the density of lines of electric field is decreased in the case of the I type electrode at the end 41 of the electrode 4, mitigating the concentration of electric field. Accordingly, no adverse effect is caused on the crystal construction of the operation layer, increasing the dielectric strength between the drain and source.
COPYRIGHT: (C)1979,JPO&Japio
JP1948978A 1978-02-21 1978-02-21 Field effect transistor Pending JPS54111788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1948978A JPS54111788A (en) 1978-02-21 1978-02-21 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1948978A JPS54111788A (en) 1978-02-21 1978-02-21 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS54111788A true JPS54111788A (en) 1979-09-01

Family

ID=12000761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1948978A Pending JPS54111788A (en) 1978-02-21 1978-02-21 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS54111788A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078082A (en) * 2006-09-25 2008-04-03 Hitachi Cable Ltd Metallic cable

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078082A (en) * 2006-09-25 2008-04-03 Hitachi Cable Ltd Metallic cable

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