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JPS54111287A - Resin seal planar-structure semiconductor element - Google Patents

Resin seal planar-structure semiconductor element

Info

Publication number
JPS54111287A
JPS54111287A JP1883378A JP1883378A JPS54111287A JP S54111287 A JPS54111287 A JP S54111287A JP 1883378 A JP1883378 A JP 1883378A JP 1883378 A JP1883378 A JP 1883378A JP S54111287 A JPS54111287 A JP S54111287A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
junction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1883378A
Other languages
Japanese (ja)
Inventor
Tsuneto Sekiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1883378A priority Critical patent/JPS54111287A/en
Publication of JPS54111287A publication Critical patent/JPS54111287A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To stabilize the dielectric strength of a planar-structure element with extending a space charge region at a stop voltage applying time to PN junction to make a surface potential gradient low by forming the same conductive-type additional region surrounding the outside of the base region which is provided on a semiconductor substrate. CONSTITUTION:An oxide film is used as a mask to form P-type base region 2 on N-type Si substrate 1, which becomes a collector region, by diffusion, and further, two P-type additional regions 7 and 8 are formed in both sides of region 2 surrounding region 2 by diffusion. Next, N<+>-type region 3 and N<+>-type layer 4 are formed in region 2 and on all the reverse face of substrate 1 respectively by diffusion, and the surface exposed part of the PN junction between regions 2 and 3 is covered with oxide film 10, and the outside circumference surface of it is protected by glass film 9. By this constitution, when the stop voltage is applied to the PN junction between collector region 1 and base region 2, the space charge region is extended and the surface potential gradient is lowered to improve the surface dielectric strength because additional regions 7 and 8 exist.
JP1883378A 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element Pending JPS54111287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1883378A JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1883378A JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Publications (1)

Publication Number Publication Date
JPS54111287A true JPS54111287A (en) 1979-08-31

Family

ID=11982555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1883378A Pending JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Country Status (1)

Country Link
JP (1) JPS54111287A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165353A (en) * 1980-05-26 1981-12-18 Nec Corp Semiconductor device
JPS5780765A (en) * 1980-11-07 1982-05-20 Toshiba Corp Semiconductor device
JPS5795664A (en) * 1980-12-05 1982-06-14 Toshiba Corp Semiconductor device
JPS57132356A (en) * 1981-02-09 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165353A (en) * 1980-05-26 1981-12-18 Nec Corp Semiconductor device
JPS5780765A (en) * 1980-11-07 1982-05-20 Toshiba Corp Semiconductor device
JPS5795664A (en) * 1980-12-05 1982-06-14 Toshiba Corp Semiconductor device
JPS57132356A (en) * 1981-02-09 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0120544B2 (en) * 1981-02-09 1989-04-17 Mitsubishi Electric Corp

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