JPS49149679U - - Google Patents
Info
- Publication number
- JPS49149679U JPS49149679U JP4973373U JP4973373U JPS49149679U JP S49149679 U JPS49149679 U JP S49149679U JP 4973373 U JP4973373 U JP 4973373U JP 4973373 U JP4973373 U JP 4973373U JP S49149679 U JPS49149679 U JP S49149679U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4973373U JPS49149679U (ko) | 1973-04-27 | 1973-04-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4973373U JPS49149679U (ko) | 1973-04-27 | 1973-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49149679U true JPS49149679U (ko) | 1974-12-25 |
Family
ID=28191991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4973373U Pending JPS49149679U (ko) | 1973-04-27 | 1973-04-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS49149679U (ko) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036619A (ja) * | 1998-05-13 | 2000-02-02 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| WO2001091196A1 (fr) * | 2000-05-23 | 2001-11-29 | Toyoda Gosei Co., Ltd. | Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production |
| JP2002026392A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体発光素子とその製造方法、及び半導体発光装置 |
| JP2002246647A (ja) * | 2001-02-16 | 2002-08-30 | Stanley Electric Co Ltd | 波長変換型半導体素子 |
| US6617668B1 (en) | 1999-05-21 | 2003-09-09 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6818926B2 (en) | 1999-07-27 | 2004-11-16 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| JP2006253724A (ja) * | 2006-06-07 | 2006-09-21 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP2007221175A (ja) * | 2007-06-04 | 2007-08-30 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| US7462867B2 (en) | 2000-03-14 | 2008-12-09 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor devices and method for fabricating the same |
| US7491984B2 (en) | 2000-03-31 | 2009-02-17 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US7560725B2 (en) | 1999-12-24 | 2009-07-14 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1195547A (en) * | 1966-11-09 | 1970-06-17 | Siemens Ag | Improvements in or relating to Luminescent Diodes |
-
1973
- 1973-04-27 JP JP4973373U patent/JPS49149679U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1195547A (en) * | 1966-11-09 | 1970-06-17 | Siemens Ag | Improvements in or relating to Luminescent Diodes |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036619A (ja) * | 1998-05-13 | 2000-02-02 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US6617668B1 (en) | 1999-05-21 | 2003-09-09 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6881651B2 (en) | 1999-05-21 | 2005-04-19 | Toyoda Gosei Co., Ltd. | Methods and devices using group III nitride compound semiconductor |
| US6818926B2 (en) | 1999-07-27 | 2004-11-16 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| US7560725B2 (en) | 1999-12-24 | 2009-07-14 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| US7462867B2 (en) | 2000-03-14 | 2008-12-09 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor devices and method for fabricating the same |
| US7491984B2 (en) | 2000-03-31 | 2009-02-17 | Toyoda Gosei Co., Ltd. | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices |
| WO2001091196A1 (fr) * | 2000-05-23 | 2001-11-29 | Toyoda Gosei Co., Ltd. | Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production |
| JP2001332762A (ja) * | 2000-05-23 | 2001-11-30 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 |
| JP2002026392A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体発光素子とその製造方法、及び半導体発光装置 |
| JP2002246647A (ja) * | 2001-02-16 | 2002-08-30 | Stanley Electric Co Ltd | 波長変換型半導体素子 |
| JP2006253724A (ja) * | 2006-06-07 | 2006-09-21 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP2007221175A (ja) * | 2007-06-04 | 2007-08-30 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| JP4625827B2 (ja) * | 2007-06-04 | 2011-02-02 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |