JPS4894378A - - Google Patents

Info

Publication number: JPS4894378A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP47025644A

Other versions

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-03-13

Filing date

1972-03-13

Publication date

1973-12-05

1972-03-13 Application filed filed Critical

1972-03-13 Priority to JP2564472A priority Critical patent/JPS5321275B2/ja

1973-03-12 Priority to GB1184073A priority patent/GB1419695A/en

1973-03-12 Priority to NL7303449.A priority patent/NL159536B/xx

1973-03-12 Priority to DE2312162A priority patent/DE2312162C3/de

1973-12-05 Publication of JPS4894378A publication Critical patent/JPS4894378A/ja

1975-09-10 Priority to US05/612,103 priority patent/US4142160A/en

1978-07-01 Publication of JPS5321275B2 publication Critical patent/JPS5321275B2/ja

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Optics & Photonics (AREA)
Electromagnetism (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Geometry (AREA)
Semiconductor Lasers (AREA)
Optical Integrated Circuits (AREA)

JP2564472A 1972-03-13 1972-03-13 Expired JPS5321275B2 (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP2564472A JPS5321275B2 (ja)	1972-03-13	1972-03-13
GB1184073A GB1419695A (ja)	1972-03-13	1973-03-12
NL7303449.A NL159536B (nl)	1972-03-13	1973-03-12	Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan.
DE2312162A DE2312162C3 (de)	1972-03-13	1973-03-12	Halbleiterlaserplättchen und Verfahren zu seiner Herstellung
US05/612,103 US4142160A (en)	1972-03-13	1975-09-10	Hetero-structure injection laser

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2564472A JPS5321275B2 (ja)	1972-03-13	1972-03-13

Publications (2)

Publication Number	Publication Date
JPS4894378A true JPS4894378A (ja)	1973-12-05
JPS5321275B2 JPS5321275B2 (ja)	1978-07-01

Family

ID=12171529

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2564472A Expired JPS5321275B2 (ja)	1972-03-13	1972-03-13

Country Status (4)

Country	Link
JP (1)	JPS5321275B2 (ja)
DE (1)	DE2312162C3 (ja)
GB (1)	GB1419695A (ja)
NL (1)	NL159536B (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51104287A (ja) *	1975-03-12	1976-09-14	Hitachi Ltd	Handotaireezasochi
JPS5215280A (en) *	1975-07-28	1977-02-04	Nippon Telegr & Teleph Corp <Ntt>	Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) *	1975-10-07	1977-04-09	Nippon Telegr & Teleph Corp <Ntt>	Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5842283A (ja) *	1981-09-04	1983-03-11	Nippon Telegr & Teleph Corp <Ntt>	埋込み型半導体レ−ザの製法
JPS62157339A (ja) *	1986-11-28	1987-07-13	Hitachi Ltd	情報再生装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1531238A (en) *	1975-01-09	1978-11-08	Standard Telephones Cables Ltd	Injection lasers
NL176323C (nl) *	1975-03-11	1985-03-18	Philips Nv	Halfgeleiderinrichting voor het opwekken van incoherente straling.
NL7607299A (nl) *	1976-07-02	1978-01-04	Philips Nv	Injektielaser.
DE2760112C2 (ja) *	1976-07-02	1989-05-18	N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl
CA2006597A1 (en) *	1988-12-26	1990-06-26	Kazuo Kogure	Method for manufacturing compound semiconductor devices and a compound semiconductor device
CA2089900C (en) *	1992-02-20	2001-10-16	Ichiro Yoshida	Multi-beam semiconductor laser and method for producing the same
JP4189610B2 (ja) *	1998-05-08	2008-12-03	ソニー株式会社	光電変換素子およびその製造方法

1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
1973
- 1973-03-12 DE DE2312162A patent/DE2312162C3/de not_active Expired
- 1973-03-12 NL NL7303449.A patent/NL159536B/xx not_active IP Right Cessation
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51104287A (ja) *	1975-03-12	1976-09-14	Hitachi Ltd	Handotaireezasochi
JPS606118B2 (ja) *	1975-03-12	1985-02-15	株式会社日立製作所	半導体レーザ装置
JPS5215280A (en) *	1975-07-28	1977-02-04	Nippon Telegr & Teleph Corp <Ntt>	Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) *	1975-10-07	1977-04-09	Nippon Telegr & Teleph Corp <Ntt>	Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5842283A (ja) *	1981-09-04	1983-03-11	Nippon Telegr & Teleph Corp <Ntt>	埋込み型半導体レ−ザの製法
JPS62157339A (ja) *	1986-11-28	1987-07-13	Hitachi Ltd	情報再生装置
JPH0239022B2 (ja) *	1986-11-28	1990-09-03	Hitachi Ltd

Also Published As

Publication number	Publication date
JPS5321275B2 (ja)	1978-07-01
GB1419695A (ja)	1975-12-31
NL7303449A (ja)	1973-09-17
DE2312162B2 (de)	1977-07-14
DE2312162C3 (de)	1978-03-09
DE2312162A1 (de)	1973-10-04
NL159536B (nl)	1979-02-15

Publication	Publication Date	Title
FR2172504A5 (ja)	1973-09-28
JPS5321275B2 (ja)	1978-07-01
FR2201825B1 (ja)	1975-03-14
JPS5337457Y2 (ja)	1978-09-11
FR2213190A1 (ja)	1974-08-02
JPS4882820A (ja)	1973-11-06
JPS4973702U (ja)	1974-06-26
JPS4879697A (ja)	1973-10-25
FR2127637A5 (ja)	1972-10-13
JPS4915834U (ja)	1974-02-09
JPS4896997U (ja)	1973-11-17
CS152190B1 (ja)	1973-12-19
JPS48100069A (ja)	1973-12-18
JPS4948429U (ja)	1974-04-27
CS149971B1 (ja)	1973-09-04
JPS4990881A (ja)	1974-08-30
CS153160B1 (ja)	1974-02-25
CS152929B1 (ja)	1974-02-22
CH568940A5 (ja)	1975-11-14
AU480892A (ja)	1974-03-14
CH624172A4 (ja)	1974-08-15
CH581147A5 (ja)	1976-10-29
CH603690A5 (ja)	1978-08-31
CH592635A5 (ja)	1977-10-31
CH587215A5 (ja)	1977-04-29