JPH1187458A - Semiconductor manufacturing apparatus with foreign matter removal function - Google Patents
Semiconductor manufacturing apparatus with foreign matter removal functionInfo
- Publication number
- JPH1187458A JPH1187458A JP25027097A JP25027097A JPH1187458A JP H1187458 A JPH1187458 A JP H1187458A JP 25027097 A JP25027097 A JP 25027097A JP 25027097 A JP25027097 A JP 25027097A JP H1187458 A JPH1187458 A JP H1187458A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- foreign matter
- contact
- processing
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
工程において、ウエハ処理時にウエハの裏面に付着する
異物を除去する機能を備えた半導体製造装置及び検査装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and an inspection apparatus having a function of removing foreign substances adhering to the back surface of a wafer during wafer processing in a semiconductor device manufacturing process.
【0002】[0002]
【従来の技術】半導体素子の高集積化に伴い、半導体装
置の製造及び検査工程においては、ウエハ表面のみなら
ず、裏面への異物(塵埃)の付着も問題となっている。
これは洗浄工程でのウエハ裏面から表面への異物の乗り
移りやフォトリソグラフィー工程での裏面異物起因のデ
フォーカスの原因となってしまうためである。また、エ
ッチング,スパッタ等のウエハ処理工程では、ウエハ面
内の均一性を確保するために、ウエハ面内の温度コント
ロールが行われているが、ウエハ裏面異物の付着により
ウエハステージとの隙間が不均一となり、充分な温度コ
ントロールができなくなる。2. Description of the Related Art As semiconductor elements become more highly integrated, foreign matter (dust) adheres not only to the front surface of a wafer but also to the back surface in the manufacturing and inspection processes of semiconductor devices.
This is because the transfer of foreign matter from the back surface of the wafer to the front surface in the cleaning process and the defocus due to the back surface foreign material in the photolithography process are caused. In addition, in a wafer processing process such as etching and sputtering, temperature control in the wafer surface is performed in order to ensure uniformity in the wafer surface. It becomes uniform, and sufficient temperature control becomes impossible.
【0003】特に近年はウエハ保持に静電気力が使用さ
れるようになってきているが、異物の存在は静電気力を
著しく減衰させる原因となるため、ウエハ裏面異物の付
着は重要な問題となっている。Particularly, in recent years, electrostatic force has been used for holding a wafer. However, since the presence of foreign matter causes the electrostatic force to be significantly attenuated, adhesion of foreign matter on the back surface of the wafer is an important problem. I have.
【0004】従来、このようなウエハの裏面に対する異
物の低減法としては、例えば特開平8−321447 号公報が
ある。Conventionally, as a method for reducing such foreign matter on the back surface of a wafer, there is, for example, Japanese Patent Application Laid-Open No. 8-321414.
【0005】[0005]
【発明が解決しようとする課題】ウエハ処理装置におい
て、真空中及び処理中のウエハの搬送や固定の際に静電
吸着装置が多く利用されている。静電吸着装置では、処
理中ウエハの反りの矯正が可能である、温度制御のため
の熱伝導性が向上する、機械接触部から発生する異物を
低減できる等の利点がある。2. Description of the Related Art In a wafer processing apparatus, an electrostatic attraction apparatus is often used for transferring and fixing a wafer in a vacuum and during processing. The electrostatic attraction device has advantages such as being able to correct the warpage of the wafer during processing, improving thermal conductivity for temperature control, and reducing foreign matter generated from the mechanical contact portion.
【0006】しかし、静電吸着を利用した処理装置であ
っても、ウエハ裏面と静電吸着装置が接触するため、こ
の部分では異物が発生する。前にも述べたように、ウエ
ハ裏面の付着異物は半導体装置の製造及び検査工程にお
いて、重要な問題となる。However, even in a processing apparatus utilizing electrostatic attraction, foreign matter is generated at this portion because the back surface of the wafer is in contact with the electrostatic attraction device. As described above, the adhered foreign matter on the back surface of the wafer becomes an important problem in the manufacturing and inspection processes of the semiconductor device.
【0007】しかしながら、上記従来例では裏面異物に
接触する部材に付着している異物の除去という点では考
慮されているものの、異物の除去に使用する板状部材の
設置や、異物除去方法に関しての配慮が不足しており、
異物数そのものを積極的に減らす手段としては、まだ不
十分であった。[0007] However, in the above-mentioned conventional example, although consideration is given to the removal of foreign matter adhering to the member that comes into contact with the foreign matter on the back surface, the installation of a plate-like member used for removing foreign matter and the method for removing foreign matter are not considered. Lack of consideration,
As a means for positively reducing the number of foreign substances itself, it was still insufficient.
【0008】本発明の第一の目的は、処理装置内におけ
るウエハ裏面との接触部に発生した異物、あるいは処理
ウエハによる持ち込み異物を積極的に除去する機能を持
つ半導体製造装置及び検査装置を提供することにある。A first object of the present invention is to provide a semiconductor manufacturing apparatus and an inspection apparatus having a function of positively removing foreign matter generated in a contact portion with a back surface of a wafer in a processing apparatus or foreign matter brought in by a processed wafer. Is to do.
【0009】また、本発明の第二の目的は、処理装置内
においてウエハ裏面に付着する可能性のある異物を、板
状部材を用いて効率よく除去することができる異物低減
機能付き半導体製造装置及び検査装置を提供することに
ある。A second object of the present invention is to provide a semiconductor manufacturing apparatus with a foreign matter reduction function capable of efficiently removing foreign matter that may adhere to the back surface of a wafer in a processing apparatus using a plate-like member. And an inspection device.
【0010】[0010]
【課題を解決するための手段】上記第一の目的を達成す
るため、ウエハの搬送,固定または処理機能を持つウエ
ハ処理装置において、通常の動作時にウエハの裏面に接
触する部位を覆える面積を有する板状部材を用いて、通
常の処理時と同様の動作を行い、ウエハ裏面と接触する
部位に存在する異物を板状部材に転写することで除去
し、結果的にウエハ裏面に付着する異物を低減する。In order to achieve the first object, in a wafer processing apparatus having a function of transporting, fixing, or processing a wafer, an area capable of covering a portion which comes into contact with the back surface of the wafer during a normal operation. The same operation as during normal processing is performed using the plate-like member having the same, foreign matter existing in a portion that comes into contact with the back surface of the wafer is removed by transferring the foreign matter to the plate-like member. To reduce.
【0011】または、前述した板状部材を保持した状態
で搬送または固定のみの動作を行い、同様の異物転写効
果により、ウエハ裏面との接触面の異物除去を行い、ウ
エハ裏面に付着する異物を低減する。Alternatively, only the operation of carrying or fixing is carried out while holding the above-mentioned plate-like member, foreign matters are removed from the contact surface with the backside of the wafer by the same foreign matter transfer effect, and foreign matter adhering to the backside of the wafer is removed. Reduce.
【0012】また、上記第二の目的を達成するため、前
述した板状部材を任意のウエハ搬送経路中に設置し、そ
れを搬送または固定する動作を行う。任意のウエハ搬送
経路中に板状部材を設置することにより、製品ウエハの
処理時間中に、板状部材を搬送または固定する動作を行
うことができ、ウエハ裏面との接触面の異物を効率よく
除去することが可能となる。In order to achieve the second object, the above-described plate-like member is set in an arbitrary wafer transfer path, and an operation of transferring or fixing the plate-like member is performed. By placing the plate-shaped member in an arbitrary wafer transfer path, the operation of transferring or fixing the plate-shaped member can be performed during the processing time of the product wafer, thereby efficiently removing foreign matter on the contact surface with the back surface of the wafer. It can be removed.
【0013】そして、前述した板状部材の搬送または固
定の動作を連続して2回以上繰り返すことによって、異
物除去の効果をより高めることができるので、ウエハ裏
面との接触部の異物を効率よく除去することが可能とな
り、結果としてウエハ裏面に付着する異物の低減化が可
能となる。The effect of removing foreign substances can be further enhanced by repeating the above-described operation of transporting or fixing the plate-shaped member twice or more continuously, so that foreign substances at the contact portion with the back surface of the wafer can be efficiently removed. It is possible to remove them, and as a result, it is possible to reduce foreign substances adhering to the back surface of the wafer.
【0014】また、前述した板状部材はシリコンウエ
ハ、あるいは高分子材料,セラミックスであってもよ
く、それらは定期的に交換されることにより目的は達成
される。Further, the above-mentioned plate-shaped member may be a silicon wafer, a polymer material, or ceramics, and the object is achieved by periodically replacing them.
【0015】さらに、板状部材専用カセット及びローダ
室,アンローダ室を実際の処理用ウエハのカセット及び
ローダ室,アンローダ室とは別に備えることにより目的
は達成される。Further, the object is achieved by providing a cassette, a loader chamber, and an unloader chamber dedicated to the plate-shaped member separately from the cassette, the loader chamber, and the unloader chamber for the actual processing wafer.
【0016】また、板状部材を使用する際のシーケンス
は通常のウエハ処理時のシーケンス内に組み込まれてい
る他、前記板状部材を使用するシーケンスを独立して使
用可能なことにより目的は達成される。Further, the sequence when using the plate-shaped member is incorporated in the sequence at the time of ordinary wafer processing, and the object can be achieved because the sequence using the plate-shaped member can be used independently. Is done.
【0017】[0017]
【発明の実施の形態】以下、本発明の実施例を図面を参
照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0018】図1は、本発明の第一の実施例であり、本
発明を半導体検査装置の搬送部に適用した例について説
明する。図1において1は検査を行うメインチャンバ
ー、2は試料交換用のロードロック室であり、ゲートバ
ルブ3で仕切られていて、それぞれ真空雰囲気に保たれ
ている。4はウエハカセット、5は大気中でウエハをロ
ードロック室2へ搬送する搬送アーム、6は真空中でウ
エハを搬送する静電吸着搬送アーム、7はシリコンウエ
ハを載せるウエハホルダー、8はメインチャンバー内で
ウエハホルダーを保持するウエハステージである。FIG. 1 shows a first embodiment of the present invention. An example in which the present invention is applied to a transport section of a semiconductor inspection apparatus will be described. In FIG. 1, reference numeral 1 denotes a main chamber for inspection, and reference numeral 2 denotes a load lock chamber for exchanging a sample, which is partitioned by a gate valve 3 and each is kept in a vacuum atmosphere. 4 is a wafer cassette, 5 is a transfer arm for transferring a wafer to the load lock chamber 2 in the atmosphere, 6 is an electrostatic suction transfer arm for transferring a wafer in a vacuum, 7 is a wafer holder on which a silicon wafer is placed, and 8 is a main chamber. A wafer stage that holds a wafer holder inside.
【0019】通常ウエハ9は、カセット4から取り出さ
れロードロック室2へと搬送され、静電吸着アーム6に
よりウエハホルダー7に載せられ、真空引きが完了した
後にゲートバルブ3を通って、メインチャンバー内のウ
エハステージ8へウエハホルダーごと搬送される。Normally, the wafer 9 is taken out of the cassette 4 and transported to the load lock chamber 2 and placed on the wafer holder 7 by the electrostatic attraction arm 6, and after the evacuation is completed, passes through the gate valve 3 and passes through the main chamber. The wafer holder 8 is transferred to the wafer stage 8 in the inside.
【0020】この装置の例では、ウエハ搬送中にウエハ
が接触するのは大気中と真空中のそれぞれの搬送アーム
とウエハホルダーであるが、ウエハとの接触部分に異物
が付着していると、ウエハを固定し搬送する際にウエハ
裏面にこれらの異物が付着し、その後の工程において歩
留まりを低下させる原因となったり、製造装置を汚染す
るといったことが考えられる。また、確実にウエハを保
持できない原因ともなり得る。In this example of the apparatus, the wafer comes into contact with the respective transfer arms and the wafer holder in the atmosphere and in vacuum while the wafer is being transferred. When the wafer is fixed and transported, it is conceivable that these foreign substances adhere to the back surface of the wafer, causing a reduction in the yield in subsequent steps, and contaminating the manufacturing apparatus. Further, it may be a cause that the wafer cannot be reliably held.
【0021】そこで本発明で提案したように、ウエハ裏
面の接触する部位を覆える板状部材を通常の処理ウエハ
と同様に搬送することにより、ウエハ裏面が接触する部
分の異物が板状部材側に転写され、除去される。Therefore, as proposed in the present invention, by transporting the plate-like member covering the contacting portion of the back surface of the wafer in the same manner as a normal processing wafer, the foreign matter at the contact portion of the wafer back surface is reduced to the plate-like member side. Transferred and removed.
【0022】次に、本発明の第二の実施例を図2,図3
により説明する。図2は図1と同様の検査装置のロード
ロック室2を上から見た図である。また、図3はその断
面図であり、板状部材10をロードロック室2内に設置
できる構造となっている。ウエハが処理中で、ロードロ
ック室内にないときに、静電吸着搬送アーム6を上昇さ
せて、板状部材10を吸着固定させ、搬送アーム6上に
付着している異物を除去する。処理ウエハがメインチャ
ンバー内にあるときにこの動作を行うことにより、装置
のスループットを低下させることなく、異物を除去する
ことができる。Next, a second embodiment of the present invention will be described with reference to FIGS.
This will be described below. FIG. 2 is a top view of the load lock chamber 2 of the inspection device similar to FIG. FIG. 3 is a cross-sectional view showing a structure in which the plate member 10 can be installed in the load lock chamber 2. When the wafer is being processed, and is not in the load lock chamber, the electrostatic suction transfer arm 6 is raised to fix the plate-shaped member 10 by suction, and foreign substances adhering to the transfer arm 6 are removed. By performing this operation when the processing wafer is in the main chamber, foreign substances can be removed without reducing the throughput of the apparatus.
【0023】本実施例ではウエハとの接触面積が大き
く、ウエハ裏面への異物付着に関して特に問題となりや
すい静電吸着装置部分の異物除去に重点を置き、真空雰
囲気であるロードロック室内に板状部材を設置してい
る。しかし、板状部材の設置場所は、異物を除去しよう
とする部品の状況に合わせて、効果的かつ装置のスルー
プットに影響しない任意のウエハ搬送経路中とし、装置
内のウエハ裏面接触部の一部分の異物を重点的に除去す
ることで、装置全体を効率よくクリーンな状態に保つこ
とができる。In this embodiment, emphasis is placed on the removal of foreign matter in the portion of the electrostatic attraction device, which has a large contact area with the wafer and is particularly problematic with respect to the adhesion of foreign matter to the back surface of the wafer. Is installed. However, the place where the plate-shaped member is to be installed is set in an arbitrary wafer transfer path that is effective and does not affect the throughput of the apparatus in accordance with the situation of the component from which the foreign matter is to be removed, and a part of the wafer back surface contact portion in the apparatus is used. By mainly removing foreign matter, the entire apparatus can be efficiently kept in a clean state.
【0024】続いて、静電吸着によるウエハ保持の原理
と吸着部分の付着異物除去について、図4を用いて説明
する。静電吸着は前に述べたロードロック室内のウエハ
搬送の他、エッチングやスパッタ等の処理工程でのウエ
ハステージへの吸着保持を目的として様々な装置に採用
されている。図4において9はウエハ、11は誘電体、
12は電極、13は電源である。静電吸着装置は、誘電
体11を介して電源13により電極12とウエハ9の間
に電圧を印加し、この間に静電力を発生させてウエハ9
を吸着させるものである。Next, the principle of holding a wafer by electrostatic attraction and the removal of foreign matter adhering to the attracted portion will be described with reference to FIG. Electrostatic suction is employed in various apparatuses for the purpose of holding a wafer stage in a processing step such as etching or sputtering, in addition to the above-described wafer transfer in a load lock chamber. In FIG. 4, 9 is a wafer, 11 is a dielectric,
Reference numeral 12 is an electrode, and 13 is a power supply. The electrostatic attraction device applies a voltage between the electrode 12 and the wafer 9 by the power supply 13 via the dielectric 11, and generates an electrostatic force between the electrodes 12 and the wafer 9.
Is to be adsorbed.
【0025】図4は単極型と呼ばれるもので、電極が1
つでウエハからアースをとる構造の静電吸着装置を示し
ている。図4に示す様に誘電体11の表面には処理ウエ
ハとの接触により発生、あるいは持ち込み等による異物
14が存在する。これらの異物である粒子は何らかの理
由により帯電していることが考えられる。たとえば機械
的な接触による破壊で生じた異物は破壊面での摩擦によ
り帯電する。また、異なる材質間での接触が起これば材
料間の電子のエネルギー順位差に起因した帯電が発生す
る。FIG. 4 shows what is called a monopolar type, in which one electrode is used.
1 shows an electrostatic chuck having a structure for grounding the wafer. As shown in FIG. 4, a foreign substance 14 is generated on the surface of the dielectric 11 due to contact with the processing wafer, or is brought into the processing apparatus or brought in. It is conceivable that these foreign particles are charged for some reason. For example, foreign matter generated by destruction due to mechanical contact is charged by friction on the destruction surface. Also, if contact occurs between different materials, charging occurs due to the difference in the energy order of electrons between the materials.
【0026】さらに電界に曝されたために帯電が起こる
ほか、プラズマを利用した装置では電子やイオンの入射
によっても帯電は生じる。この異物14はウエハが接触
すると物理的接触によりウエハ側に付着する、あるいは
異物とウエハとの電位差に起因する帯電により静電気的
に付着することで、ウエハとの接触面である誘電体表面
から除去される。In addition to charging due to exposure to an electric field, in a device utilizing plasma, charging also occurs due to incidence of electrons and ions. When the foreign matter 14 comes into contact with the wafer, the foreign matter 14 is attached to the wafer side by physical contact or electrostatically attached due to charging caused by a potential difference between the foreign matter and the wafer, thereby removing the foreign matter 14 from the dielectric surface which is the contact surface with the wafer. Is done.
【0027】図5は本発明の第三の実施例を示す図で、
半導体製造装置の全体の構成とウエハの流れを示してい
る。図5において、15,16はウエハの処理を行う処
理室、10は異物除去に用いる板状部材である。17は
ウエハを処理室にロード,アンロードする搬送ロボット
であり、真空に保たれたバッファー室18に設置されて
いる。19,20,21はウエハが出し入れされるカセ
ットである。FIG. 5 shows a third embodiment of the present invention.
1 shows an overall configuration of a semiconductor manufacturing apparatus and a flow of a wafer. In FIG. 5, reference numerals 15 and 16 denote processing chambers for processing a wafer, and reference numeral 10 denotes a plate-like member used for removing foreign matter. Reference numeral 17 denotes a transfer robot for loading and unloading a wafer into and from the processing chamber, and is installed in a buffer chamber 18 kept at a vacuum. Reference numerals 19, 20, and 21 denote cassettes into which wafers are taken in and out.
【0028】通常のウエハ処理において、ロードカセッ
ト19から、ウエハ22は搬送ロボット17によりバッ
ファー室18を通って、処理室15,16に搬送され、
処理後アンロードカセット21に戻る。本発明では通常
のロード,アンロードカセットに加えて、異物除去用の
板状部材専用のカセット20を備えているのが特徴であ
る。In normal wafer processing, the wafer 22 is transferred from the load cassette 19 to the processing chambers 15 and 16 by the transfer robot 17 through the buffer chamber 18.
After the processing, the process returns to the unload cassette 21. The present invention is characterized in that, in addition to the normal load and unload cassettes, a cassette 20 dedicated to a plate-like member for removing foreign substances is provided.
【0029】通常の処理終了後、カセット20から異物
除去用の板状部材10が処理室にロードされてウエハ裏
面接触部材からの異物除去を行う。処理ウエハと同様に
搬送,固定,保持が行われた後板状部材10はアンロー
ドされて再びカセット20に戻り、通常のエッチング処
理が開始される。After the normal processing, the plate-like member 10 for removing foreign matter is loaded from the cassette 20 into the processing chamber to remove foreign matter from the wafer back surface contact member. After being transferred, fixed, and held in the same manner as the processing wafer, the plate member 10 is unloaded and returned to the cassette 20 again, and normal etching processing is started.
【0030】このように異物除去用専用カセットを備え
ることにより、処理用ウエハのカセットを使用すること
がないため、異物除去作業の際の基板の入れ替えが必要
なくなり、作業性が向上できる。By providing the special cassette for removing foreign matter as described above, since a cassette for processing wafers is not used, it is not necessary to replace the substrate at the time of removing foreign matter, and the workability can be improved.
【0031】また、異物除去作業後の板状部材と実際の
処理ウエハを隔離することができるので、処理ウエハを
汚染する心配がない。また、異物除去用の板状部材8専
用のカセットの他、専用のローダ室,アンローダ室を備
えることにより、さらにスループットの低下を防止する
ことが可能となる。Further, since the plate-like member after the foreign matter removing operation can be separated from the actual processed wafer, there is no fear of contaminating the processed wafer. Further, by providing a dedicated loader chamber and an unloader chamber in addition to the cassette dedicated to the plate-like member 8 for removing foreign substances, it is possible to further prevent a decrease in throughput.
【0032】ここで用いる板状部材としては、処理装置
内でウエハと接触する部位の面積よりも大きな面積を持
つものであればよく、表面の清浄なシリコンダミーウエ
ハ,高分子材料,セラミックス材料など、重金属汚染の
原因となるような材料を除いたさまざまな材質のものが
使用可能である。The plate-like member used here may be any member having an area larger than the area of the portion in contact with the wafer in the processing apparatus, such as a silicon dummy wafer having a clean surface, a polymer material, a ceramic material, or the like. Various materials other than those that cause heavy metal contamination can be used.
【0033】この異物除去用の板状部材を使用する頻度
に関しては、あらかじめある枚数毎に実施するといった
シーケンスを組んで行う方法の他、検査装置により異物
が増加した際に実施する方法であっても効果的である。
また、異物除去用板状部材を一回に一枚あるいは二枚以
上を用いて複数回作業を行うことにより、さらに高い効
果が得られる。さらに、この板状部材の両面を使用し
て、異物の除去を行うことも可能である。Regarding the frequency of using the plate-like member for removing foreign matter, there is a method that is performed when a foreign matter is increased by an inspection apparatus, in addition to a method of performing a sequence such that the plate-like member is used for every certain number of sheets in advance. Is also effective.
Further, a higher effect can be obtained by performing the operation a plurality of times using one or two or more plate members for removing foreign matter at a time. Furthermore, foreign substances can be removed using both surfaces of the plate-like member.
【0034】以上本発明の実施例では、検査装置と半導
体製造装置に異物除去用板状部材を設置した例を説明し
たが、本発明は半導体処理の様々なプロセス用の装置、
たとえばエッチング装置やイオン打ち込み装置,描画装
置,CVD装置等の装置にも有効に適用可能である。In the embodiments of the present invention described above, the inspection apparatus and the semiconductor manufacturing apparatus are provided with the plate-like members for removing foreign substances. However, the present invention is directed to various apparatuses for semiconductor processing,
For example, the present invention can be effectively applied to devices such as an etching device, an ion implantation device, a drawing device, and a CVD device.
【0035】[0035]
【発明の効果】以上のように本発明によれば、ウエハ処
理装置における通常の動作、例えば搬送,固定,処理と
いった動作時にウエハの裏面に接触する部位を覆える面
積を有する板状部材を用いて、装置内のウエハ裏面の接
触面に存在する異物を板状部材に転写することで除去す
ることができる。その結果、処理用ウエハの裏面異物を
低減したクリーンな装置となり、さらに稼働率が高く、
歩留まりのよい装置を提供することができる。As described above, according to the present invention, a plate-like member having an area capable of covering a portion that comes into contact with the back surface of a wafer during normal operations in a wafer processing apparatus, for example, operations such as transfer, fixing, and processing, is used. Thus, foreign matter present on the contact surface on the back surface of the wafer in the apparatus can be removed by transferring the foreign matter to the plate member. As a result, it is a clean device that reduces foreign matter on the back side of the processing wafer, and the operation rate is higher,
A device with a high yield can be provided.
【図1】本発明の第一の実施例である半導体検査装置を
示す図。FIG. 1 is a diagram showing a semiconductor inspection apparatus according to a first embodiment of the present invention.
【図2】本発明の第二の実施例である半導体検査装置を
示す図。FIG. 2 is a diagram showing a semiconductor inspection apparatus according to a second embodiment of the present invention.
【図3】本発明の第二の実施例を示す断面図。FIG. 3 is a sectional view showing a second embodiment of the present invention.
【図4】板状部材による異物除去の原理図。FIG. 4 is a view showing the principle of foreign matter removal by a plate-like member.
【図5】本発明の第三の実施例を示す図。FIG. 5 is a diagram showing a third embodiment of the present invention.
1…メインチャンバー、2…ロードロック室、3…ゲー
トバルブ、4…ウエハカセット、5…搬送アーム、6…
静電吸着アーム、7…ウエハホルダー、8…ウエハステ
ージ、9,22…ウエハ、10…板状部材、11…誘電
体、12…電極、13…電源、14…異物、15,16
…処理室、17…搬送ロボット、18…バッファー室、
19…ロードカセット、20,21…カセット。DESCRIPTION OF SYMBOLS 1 ... Main chamber, 2 ... Load lock chamber, 3 ... Gate valve, 4 ... Wafer cassette, 5 ... Transfer arm, 6 ...
Electrostatic suction arm, 7: Wafer holder, 8: Wafer stage, 9, 22: Wafer, 10: Plate member, 11: Dielectric, 12: Electrode, 13: Power supply, 14: Foreign matter, 15, 16
... Processing room, 17 ... Transfer robot, 18 ... Buffer room,
19: Load cassette, 20, 21: Cassette.
Claims (1)
ウエハを搬送する機能、または固定する機能、または固
定した状態で処理する機能のいずれかの機能を有するウ
エハ処理装置において、前記ウエハの処理の前あるいは
後に、通常のウエハ処理時に前記ウエハの裏面に接触す
る部位を覆える面積を有する板状部材を用いて、通常の
ウエハ処理時と同様の動作を行いウエハ裏面に接触する
部位に付着する異物を除去することを特徴とする異物除
去機能付き半導体製造装置。In a wafer processing apparatus having at least one of a function of transferring the wafer while holding the wafer, a function of fixing the wafer, and a function of processing the wafer in a fixed state, Before or after, using a plate-shaped member having an area capable of covering a portion that comes into contact with the back surface of the wafer during normal wafer processing, performs the same operation as during normal wafer processing and adheres to a portion that comes into contact with the back surface of the wafer. A semiconductor manufacturing apparatus with a foreign matter removing function, which removes foreign matter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25027097A JPH1187458A (en) | 1997-09-16 | 1997-09-16 | Semiconductor manufacturing apparatus with foreign matter removal function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25027097A JPH1187458A (en) | 1997-09-16 | 1997-09-16 | Semiconductor manufacturing apparatus with foreign matter removal function |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1187458A true JPH1187458A (en) | 1999-03-30 |
Family
ID=17205407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25027097A Pending JPH1187458A (en) | 1997-09-16 | 1997-09-16 | Semiconductor manufacturing apparatus with foreign matter removal function |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1187458A (en) |
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