JPH11350125A - Sputtering apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of uniformly cooling a target and backing plate with good cooling efficiency. SOLUTION: An electrode 10 is constituted by forming a cooling water path 5 between a copper plate 2 installed on a sputter electrode surface 1a and a sputter electrode body 1. The cooling water path 5 is composed of a main cooling water path 5A having the same plane shape as the plane shape of the target 4 and auxiliary cooling water paths 5B, 5C formed at the circumference of the main cooling water path 5A, by which the overall length of the cooling water path 5 is made shorter than the conventional cooling water path. A temp. difference between the cooling water 8 near a cooling water introducing port 6 and the cooling water 8 near a cooling water discharge port 7 is reduced and the uniform cooling of the backing plate 3 and the target 4 is made possible. The cooling efficiency is made higher by passing the cooling water in the form of turbulence.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus in which a target and a substrate are arranged in a vacuum vessel so as to face each other, and a thin film is formed on the surface of the substrate by sputtered particles emitted from the target.

[0002]

2. Description of the Related Art In a sputtering apparatus, a backing plate is fixed on an electrode, ions are applied to a target metal-welded to the backing plate, and the target is sputtered to form a thin film on the surface of a substrate on which a film is to be formed. Device. In the case of performing such sputtering, when the temperature of the target rises and the temperature exceeds the melting temperature of the metal that is welding the target to the backing plate, the target peels off from the backing plate. In order to prevent such a situation, it is widely practiced to provide a cooling water passage in the electrode and to flow cooling water through the cooling water passage to cool the backing plate and the target.

Generally, as shown in FIGS. 6 and 7, a backing plate 23 has a target 24 welded to the surface thereof, and the back surface thereof is in contact with a meandering cooling water channel 25 formed on the electrode 21. , Electrodes 21. Cooling water 28 is supplied from a cooling water inlet 26 to the cooling water passage 25, and the cooling water 28 is supplied to the cooling water passage 25.
, And is discharged from the cooling water discharge port 27. As a result, the target 24 and the backing plate 23 to be heated are cooled.

[0004]

However, in the conventional electrode 21, since the entire length of the meandering cooling water channel 25 is long, the cooling water 28 near the cooling water inlet 26 and the cooling water outlet 27 is not provided. The temperature difference is large and the target 24
In addition, there is a problem that the backing plate 23 is not cooled uniformly.

Accordingly, an object of the present invention is to provide a sputtering apparatus capable of uniformly cooling a target and a backing plate with good cooling efficiency.

[0006]

In order to solve this problem, in a sputtering apparatus according to the present invention, an electrode forms a cooling water passage between a copper plate provided on a sputter electrode surface and a sputter electrode main body, and this cooling water passage is formed. The main cooling water passage having the same planar shape as the target and a sub cooling water passage formed around the main cooling water passage, and the cooling water flow is turbulent.

[0007] With this configuration, the cooling efficiency is enhanced, and the backing plate and the target can be cooled uniformly.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to a first aspect of the present invention is directed to a vacuum vessel having a gas supply and exhaust function, comprising: a substrate provided on a substrate supporting portion; In a sputtering apparatus having an installed target and forming a film in a state where the substrate is stationary with respect to the target, the electrode is a copper plate installed on the sputter electrode surface,
A backing plate on which a sputtering material target is welded is fixed to the copper plate, a cooling channel is formed between the copper plate and the sputter electrode body, and the cooling channel is
A sputtering apparatus characterized by being constituted by a main cooling water passage having the same planar shape as the target, and a sub cooling water passage formed around the main cooling water passage,
By shortening the entire length of the cooling water channel, the temperature difference between the cooling water near the cooling water inlet and the cooling water outlet decreases,
This has the function of uniformly cooling the target and the backing plate.

According to a second aspect of the present invention, in the sputtering apparatus of the first aspect, the cooling water flow is turbulent. This has the effect of increasing the cooling efficiency.

Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. FIG. 1 is a schematic configuration diagram of a sputtering apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of the electrode, FIG. 3 is a perspective view of a sputter electrode body viewed from the front side, FIG. FIG. 5 is a view taken in the direction of arrows XX in FIG.

In FIG. 1, a vacuum vessel 11 has a gas supply and exhaust function. That is, the vacuum vessel 11 is connected to a vacuum pump (not shown) through the vacuum exhaust port 12, and the inside thereof is brought into a high vacuum state by driving the vacuum pump. The vacuum vessel 1 in this high vacuum state
A discharge gas such as an argon gas is introduced through the gas inlet 13 into the inside 1.

In the vacuum vessel 11, a target 4 attached to the electrode 10, a magnet 14 disposed immediately above the electrode 10, an earth shield 15 disposed on the outer periphery of the target 4, and Plate-like glass substrate (substrate) 1 with a film-forming target arranged so as to be
6 and a mask 17 arranged so as to mask the periphery of the glass substrate 16 from the target 4.

The glass substrate 16 is mounted and supported on a plurality of support pins 19 from a substrate mount 18, and the substrate mount 18 and the support pins 19 constitute an example of a substrate support. You. The mask 17 is fixed to a mask mounting plate 20 from the inner side of the vacuum vessel 11.

In the sputtering apparatus having the above-described structure, the inside of the vacuum vessel 11 is set to an atmosphere of a discharge gas such as Margon gas, and a voltage is applied from the power source to the target 4 via the electrode 10 to generate plasma, thereby obtaining high energy. Is incident on the target 4 of the sputtering material to sputter the sputtered particles from the target 4 and deposit the sputtered particles on the surface of the glass substrate 16, thereby forming (forming) a thin film on the surface of the glass substrate 16. ).

Next, a description will be given of the electrode 10 which is a constitution of the present invention. 2 to 5, a copper plate 2 is provided on a sputter electrode surface 1a which is a surface of the sputter electrode body 1.
A backing plate 3 on which a target 4 is welded is provided on the surface of the copper plate 2, and the sputter electrode body 1, the copper plate 2, and the backing plate 3
It is fixed by fastening. The sputter electrode body 1, the copper plate 2, and the backing plate 3 are formed in a disk shape having different thicknesses but the same diameter.
Are formed in a disk shape having a small diameter with respect to these.

Note that, between the sputter electrode body 1 and the copper plate 2,
An O-ring (not shown) is provided between the backing plate 3 and the copper plate 2 to maintain airtightness with the outside.

A cooling channel 5 is formed between the sputter electrode body 1 and the copper plate 2, that is, in the sputter electrode body 1,
The cooling water channel 5 includes a main cooling water channel 5A having the same planar shape as the target 4 and a pair of sub cooling water channels 5B and 5C formed around the main cooling water channel 5A so as to surround the main cooling water channel 5A. It is configured. At that time,
The thickness t of the main cooling water passage 5A is thin (for example, 3 mm or less),
The thickness T of the sub cooling water passages 5B and 5C is at least twice the thickness t of the main cooling water passage 5A. A cooling water inlet 6 is provided in one sub cooling water passage 5B, and a cooling water outlet 7 is provided in the other sub cooling water passage 5C.

Next, the operation during sputtering of the electrode 10 will be described. During the sputtering, the cooling water 8 flows from the cooling water inlet 6 to the cooling water passage 5. At this time, the thickness T of the sub cooling water passages 5B and 5C is
Since the thickness t is twice or more the thickness t of A, the sub cooling water passage 5B is first filled with the cooling water 8 and flows into the main cooling water passage 5A as shown by the cooling water flow (arrow), and then the cooling water The cooling water flows into the sub cooling water passage 5C formed around the outlet 7 and is discharged from the cooling water outlet 7. Thereby, the backing plate 3 and the target 4 are cooled.

In such cooling, the main cooling water passage 5A
Of the cooling water inlet 6
And the temperature difference between the cooling water 8 near the cooling water outlet 7 and the cooling water 8 near the cooling water discharge port 7 is small, so that the backing plate 3 and the target 4 can be uniformly cooled.

In the above embodiment, the cooling water flow is turbulent. That is,

[0021]

Re = v × d × ρ ÷ η Re Reynolds number v Flow velocity d Hydraulic diameter ρ Density η Adjust the cooling water pressure with Reynolds number Re defined by viscosity coefficient,
By setting the cooling water flow rate such that Re> 3000, the cooling water flow is made turbulent, thereby improving the cooling efficiency. Other electrode shapes, operations, and the like are the same as those in the above-described embodiment, and a description thereof will be omitted.

In the above embodiment, the target 4 has a disk shape (circular shape).
This can also be done using a square target.

[0023]

According to the present invention, since the total length of the cooling water passage formed in the electrode is shorter than that of the conventional cooling water passage, the temperature of the cooling water near the cooling water inlet and the temperature of the cooling water near the cooling water outlet are reduced. The difference is small, and the backing plate and the target can be cooled uniformly. By making the cooling water turbulent, the cooling efficiency can be improved.

[Brief description of the drawings]

FIG. 1 shows an embodiment of the present invention, and is a schematic configuration diagram of a sputtering apparatus.

FIG. 2 shows one embodiment of the present invention, and is a perspective view of an electrode.

FIG. 3 shows one embodiment of the present invention, and is a perspective view of a sputter electrode main body viewed from a front surface side.

FIG. 4 shows one embodiment of the present invention, and is a cross-sectional view of an electrode.

FIG. 5 shows an embodiment of the present invention, and corresponds to X in FIG.
FIG.

FIG. 6 shows a conventional example and is a cross-sectional view of an electrode.

7 shows a conventional example, and is a view taken along the line YY in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Sputter electrode main body 1a Sputter electrode surface 2 Copper plate 3 Backing plate 4 Target 5 Cooling water channel 5A Main cooling water channel 5B Sub cooling water channel 5C Sub cooling water channel 6 Cooling water inlet 7 Cooling water outlet 8 Cooling water 10 Electrode 11 Vacuum container 12 Vacuum Exhaust port 13 Gas inlet 14 Magnet 15 Earth shield 16 Glass substrate (substrate) t Thickness of main cooling water channel T Thickness of sub cooling water channel

Continuation of the front page (72) Inventor Yoshiyuki Nakano 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.

Claims (2)

[Claims] 1. A vacuum vessel having a gas supply and exhaust function, comprising: a substrate provided on a substrate support, and a target opposed to the substrate and provided on an electrode side. In a sputtering apparatus that forms a film in a stationary state, an electrode is provided with a copper plate on a sputter electrode surface, and a backing plate on which a target of a sputtering material is welded is fixed to the copper plate, and between the copper plate and the sputter electrode body. A cooling water passage is formed, and the cooling water passage is constituted by a main cooling water passage having the same planar shape as the target and a sub cooling water passage formed around the main cooling water passage. . 2. The sputtering apparatus according to claim 1, wherein the cooling water flow is turbulent.