JPH1135684A - Polyimide precursor and polyimide and its production - Google Patents
Polyimide precursor and polyimide and its productionInfo
- Publication number
- JPH1135684A JPH1135684A JP19855297A JP19855297A JPH1135684A JP H1135684 A JPH1135684 A JP H1135684A JP 19855297 A JP19855297 A JP 19855297A JP 19855297 A JP19855297 A JP 19855297A JP H1135684 A JPH1135684 A JP H1135684A
- Authority
- JP
- Japan
- Prior art keywords
- group
- polyimide
- precursor
- acid
- polyimide precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 68
- 239000004642 Polyimide Substances 0.000 title claims abstract description 65
- 239000002243 precursor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 125000000962 organic group Chemical group 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims description 11
- 150000004985 diamines Chemical class 0.000 abstract description 17
- 150000000000 tetracarboxylic acids Chemical class 0.000 abstract description 16
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 abstract description 8
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 150000003949 imides Chemical class 0.000 abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011342 resin composition Substances 0.000 abstract description 5
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 abstract description 4
- JQVZQTDUPLLZLN-UHFFFAOYSA-N 4-(4-amino-2,6-difluorophenyl)-3,5-difluoroaniline Chemical group FC1=CC(N)=CC(F)=C1C1=C(F)C=C(N)C=C1F JQVZQTDUPLLZLN-UHFFFAOYSA-N 0.000 abstract description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract description 4
- SDJAQXZTKBYSCX-UHFFFAOYSA-N 1,2,3,4-tetrafluorobiphenylene Chemical group C1=CC=C2C3=C(F)C(F)=C(F)C(F)=C3C2=C1 SDJAQXZTKBYSCX-UHFFFAOYSA-N 0.000 abstract description 3
- 150000001412 amines Chemical class 0.000 abstract description 3
- 238000007363 ring formation reaction Methods 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 2
- 125000003118 aryl group Chemical group 0.000 description 19
- -1 -butyl group Chemical group 0.000 description 17
- 238000002834 transmittance Methods 0.000 description 12
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 229940124530 sulfonamide Drugs 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000006798 ring closing metathesis reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 2
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- KJDRSWPQXHESDQ-UHFFFAOYSA-N 1,4-dichlorobutane Chemical compound ClCCCCCl KJDRSWPQXHESDQ-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical group CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- OJSPYCPPVCMEBS-UHFFFAOYSA-N 2,8-dimethyl-5,5-dioxodibenzothiophene-3,7-diamine Chemical compound C12=CC(C)=C(N)C=C2S(=O)(=O)C2=C1C=C(C)C(N)=C2 OJSPYCPPVCMEBS-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- IJTVLWJOEOEFFM-UHFFFAOYSA-N 3,5-bis[(4-azidophenyl)methylidene]-4-oxocyclohexane-1-carboxylic acid Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(C(=O)O)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 IJTVLWJOEOEFFM-UHFFFAOYSA-N 0.000 description 1
- FMXFZZAJHRLHGP-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)sulfonylphthalic acid Chemical compound OC(=O)C1=CC=CC(S(=O)(=O)C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O FMXFZZAJHRLHGP-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
- QNLCDRXVEPWSBQ-UHFFFAOYSA-N 4-(4,5-dicarboxy-5-phenylcyclohexa-1,3-dien-1-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)CC1(C(O)=O)C1=CC=CC=C1 QNLCDRXVEPWSBQ-UHFFFAOYSA-N 0.000 description 1
- LSJAPRRUOIMQSN-UHFFFAOYSA-N 4-(4-amino-2-fluorophenyl)-3-fluoroaniline Chemical group FC1=CC(N)=CC=C1C1=CC=C(N)C=C1F LSJAPRRUOIMQSN-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- HHJLKTCENRQCEF-UHFFFAOYSA-N 4-[4-amino-2,6-bis(trifluoromethyl)phenyl]-3,5-bis(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC(C(F)(F)F)=C1C1=C(C(F)(F)F)C=C(N)C=C1C(F)(F)F HHJLKTCENRQCEF-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 101150033824 PAA1 gene Proteins 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- UXRDAJMOOGEIAQ-CKOZHMEPSA-N [(8r,9s,10r,13s,14s,17r)-17-acetyl-10,13-dimethyl-16-methylidene-3-oxo-1,2,8,9,11,12,14,15-octahydrocyclopenta[a]phenanthren-17-yl] acetate Chemical compound C1=CC2=CC(=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC(=C)[C@](OC(=O)C)(C(C)=O)[C@@]1(C)CC2 UXRDAJMOOGEIAQ-CKOZHMEPSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000005392 carboxamide group Chemical group NC(=O)* 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 125000000490 cinnamyl group Chemical group C(C=CC1=CC=CC=C1)* 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- UACSZOWTRIJIFU-UHFFFAOYSA-N hydroxymethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCO UACSZOWTRIJIFU-UHFFFAOYSA-N 0.000 description 1
- GJIDOLBZYSCZRX-UHFFFAOYSA-N hydroxymethyl prop-2-enoate Chemical compound OCOC(=O)C=C GJIDOLBZYSCZRX-UHFFFAOYSA-N 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- BTCFFMPDIBWZLF-UHFFFAOYSA-N n-(5-aminopyridin-2-yl)-4-(trifluoromethyl)benzamide Chemical compound N1=CC(N)=CC=C1NC(=O)C1=CC=C(C(F)(F)F)C=C1 BTCFFMPDIBWZLF-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子、光導
波路、多層配線板等の材料として有用なポリイミド前駆
体、ポリイミド及びその製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polyimide precursor, polyimide useful as a material for semiconductor devices, optical waveguides, multilayer wiring boards, and the like, and a method for producing the same.
【0002】[0002]
【従来の技術】近年、半導体工業にあっては、従来より
無機材料を用いて行われていた層間絶縁材料として、ポ
リイミド樹脂等のような耐熱性に優れた有機物が、その
特性を活かして使用されてきている。しかし、基板とな
るシリコンウエハの径が、年々大きくなる傾向にあるた
め、ポリイミドとシリコンウエハの熱膨張係数の差によ
り、表面保護膜としてのポリイミドを形成したシリコン
ウエハが反るという問題が発生している。そのため、低
熱膨張性を有するポリイミドが強く求められている。ま
た、感光性ポリイミドとしては、厚膜化、g線露光、i
線露光等に対応できる高透明性が求められている。さら
に、素子の動作速度が早くなるにつれ、誘電率の平方根
に比例する信号遅延が問題となってくるため、より誘電
率の低いポリイミドが強く求められている。しかしなが
ら、これらの特性にバランス良く優れるポリイミドは得
られていないのが現状である。2. Description of the Related Art In recent years, in the semiconductor industry, an organic material having excellent heat resistance, such as a polyimide resin, has been used as an interlayer insulating material, which has conventionally been formed using an inorganic material, taking advantage of its characteristics. Have been. However, since the diameter of a silicon wafer serving as a substrate tends to increase year by year, there is a problem that a silicon wafer formed with a polyimide as a surface protective film is warped due to a difference in thermal expansion coefficient between the polyimide and the silicon wafer. ing. Therefore, a polyimide having low thermal expansion property is strongly demanded. Further, as photosensitive polyimide, thickening, g-ray exposure, i
High transparency that can respond to line exposure and the like is required. Further, as the operation speed of the element increases, a signal delay proportional to the square root of the dielectric constant becomes a problem. Therefore, a polyimide having a lower dielectric constant is strongly demanded. However, at present, a polyimide excellent in these properties in a good balance has not been obtained.
【0003】[0003]
【発明が解決しようとする課題】請求項1記載の発明
は、光透過性が良好であり、低熱膨張性で、誘電率の低
いポリイミドを与える、感光性樹脂組成物等に好適なポ
リイミド前駆体を提供するものである。請求項2記載の
発明は、請求項1記載の発明の課題を解決し、さらに耐
熱性、低熱膨張性、膜の機械特性等に優れるポリイミド
前駆体を提供するものである。請求項3記載の発明は、
光透過性が良好であり、低熱膨張性で、誘電率の低いポ
リイミドが得られるポリイミドの製造法を提供するもの
である。請求項4記載の発明は、光透過性が良好であ
り、低熱膨張性で、誘電率の低いポリイミドを提供する
ものである。SUMMARY OF THE INVENTION The invention according to claim 1 is a polyimide precursor suitable for a photosensitive resin composition or the like, which gives a polyimide having good light transmittance, low thermal expansion and a low dielectric constant. Is provided. The invention of claim 2 solves the problem of the invention of claim 1, and further provides a polyimide precursor which is excellent in heat resistance, low thermal expansion property, mechanical properties of a film, and the like. The invention according to claim 3 is
An object of the present invention is to provide a method for producing a polyimide, which has good light transmittance, low thermal expansion, and a polyimide having a low dielectric constant. The fourth aspect of the present invention is to provide a polyimide having good light transmittance, low thermal expansion and low dielectric constant.
【0004】[0004]
【課題を解決するための手段】本発明は、一般式(I)The present invention provides a compound represented by the general formula (I):
【化4】 (式中、Xは四価の有機基を示し、R1及びR2は各々独
立にOH又は一価の有機基を示す)で表される繰り返し
単位を有するポリイミド前駆体に関する。Embedded image Wherein X represents a tetravalent organic group, and R 1 and R 2 each independently represent OH or a monovalent organic group.
【0005】また本発明は、一般式(I)中のXで表さ
れる四価の有機基が、Further, the present invention relates to a compound represented by the formula (I) wherein the tetravalent organic group represented by X is
【化5】 より選択される基である前記ポリイミド前駆体に関す
る。Embedded image The polyimide precursor is a group selected from the group consisting of:
【0006】また本発明は、前記ポリイミド前駆体をイ
ミド閉環することを特徴とするポリイミドの製造法に関
する。さらに本発明は、一般式(II)[0006] The present invention also relates to a method for producing a polyimide, wherein the polyimide precursor is subjected to imide ring closure. Further, the present invention provides a compound represented by the general formula (II):
【化6】 (式中、Xは四価の有機基を示す)で表される繰り返し
単位を有するポリイミドに関する。Embedded image (Wherein, X represents a tetravalent organic group).
【0007】[0007]
【発明の実施の形態】本発明のポリイミド前駆体は、前
記一般式(I)で表される繰り返し単位を有するもので
ある。一般式(I)におけるXは、4価の有機基であ
り、ジアミンと反応してポリイミド前駆体を形成し得る
テトラカルボン酸又はその誘導体の残基であることが好
ましい。4価の有機基としては、4価の芳香族基、脂肪
族基、シロキサン結合を含む基等が好ましく、4価の芳
香族基がより好ましい。炭素原子数の面からは4〜30
のものが好ましく、6〜24のものがより好ましく、6
〜12のものがさらに好ましい。なお、4価の芳香族基
とは、芳香環(ベンゼン環、ナフタレン環等)を含む4
価の有機基であり、4個の結合部位はいずれも芳香環か
らでているものであることが好ましい。これらの結合部
位は、2個ずつの2組に分けられ、各組の2個の結合部
位が芳香環の隣り合う炭素に存在するオルト位又はペリ
位に位置することが好ましい。前記の2組は同一の芳香
環からでていてもよいし、各種結合を介して結合してい
る別々の芳香環からでていてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The polyimide precursor of the present invention has a repeating unit represented by the above general formula (I). X in the general formula (I) is a tetravalent organic group, and is preferably a residue of a tetracarboxylic acid or a derivative thereof capable of reacting with a diamine to form a polyimide precursor. As the tetravalent organic group, a tetravalent aromatic group, an aliphatic group, a group containing a siloxane bond, and the like are preferable, and a tetravalent aromatic group is more preferable. 4 to 30 in terms of the number of carbon atoms
Are preferable, those of 6 to 24 are more preferable, and
To 12 are more preferred. Note that a tetravalent aromatic group refers to a tetravalent aromatic group containing an aromatic ring (a benzene ring, a naphthalene ring, or the like).
It is a valence organic group, and it is preferable that all four binding sites are from an aromatic ring. These binding sites are divided into two sets of two, and it is preferable that the two binding sites in each set be located at the ortho position or the peri position existing at the adjacent carbon of the aromatic ring. The two sets may be from the same aromatic ring, or may be from separate aromatic rings linked through various bonds.
【0008】具体的には、膜の光透過性、低熱膨張性、
機械特性等の面でSpecifically, the light transmittance, low thermal expansion property,
In terms of mechanical properties, etc.
【化7】 が好ましく、低熱膨張性の点でEmbedded image Are preferred, and in terms of low thermal expansion
【化8】 がより好ましい。Embedded image Is more preferred.
【0009】本発明のポリイミド前駆体は一般式(I)
において示されるテトラフルオロビフェニレン構造を含
むことにより本発明の優れた各特性を示すものである。
これは、テトラカルボン酸と反応してポリイミド前駆体
を形成し得るジアミンの残基であることが好ましい。一
般式(I)におけるR1及びR2は各々独立にOHまたは
一価の有機基である。前記一価の有機基としては、メチ
ル基、エチル基、n−プロピル基、イソプロピル基、n
−ブチル基等のアルキル基、フェニル基等のアリール
基、ベンジル基等のアラルキル基、ビニル基、アリル基
等のアルケニル基などの炭化水素基、アクリロイル基、
メタクリロイル基、メタクリロイルオキシアルキル基、
アクリロイルオキシアルキル基、ビニルエーテル基、シ
ンナミル基等の重合性不飽和二重結合を有する基、グリ
シジル基、ヒドロキシフェニル基などが、−O−又は−
NH−を介して、結合しているものが挙げられ、総炭素
数が1〜20の一価の有機基が好ましく、炭素原子数1
〜10のものがより好ましい。The polyimide precursor of the present invention has the general formula (I)
The excellent properties of the present invention are exhibited by including the tetrafluorobiphenylene structure shown in (1).
This is preferably a residue of a diamine that can react with a tetracarboxylic acid to form a polyimide precursor. R 1 and R 2 in the general formula (I) are each independently OH or a monovalent organic group. Examples of the monovalent organic group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group,
Alkyl group such as -butyl group, aryl group such as phenyl group, aralkyl group such as benzyl group, vinyl group, hydrocarbon group such as alkenyl group such as allyl group, acryloyl group,
Methacryloyl group, methacryloyloxyalkyl group,
An acryloyloxyalkyl group, a vinyl ether group, a group having a polymerizable unsaturated double bond such as a cinnamyl group, a glycidyl group, a hydroxyphenyl group, etc. are -O- or-
A monovalent organic group having a total carbon number of 1 to 20 is preferable, and a carbon atom having 1 to 20 carbon atoms is preferable.
10 to 10 are more preferable.
【0010】中でも、R1及びR2の一部または全部が、
前記、重合性不飽和二重結合を有する基等の感光基(例
えば、光の照射により脱離する基、光の照射により二量
化や共重合しうる基等)であると、ポリイミド前駆体自
体に感光性を付与することができるため感光性材料に用
いる上では好ましく、中でも重合性不飽和二重結合を有
する基であると容易に良好な感光性を付与できるので好
ましい。R1及びR2の一部を感光基とする場合、R1及
びR2並びに後述する一般式(IV)中のR7及びR8の総
計に対して10モル%以上が感光基であることが好まし
い。In particular, a part or all of R 1 and R 2 are
When the photosensitive group is a photosensitive group such as a group having a polymerizable unsaturated double bond (for example, a group capable of leaving upon irradiation with light, a group capable of dimerization or copolymerization upon irradiation with light, etc.), the polyimide precursor itself Is preferred for use as a photosensitive material because it can impart photosensitivity to the polymer. Particularly, a group having a polymerizable unsaturated double bond is preferable because good photosensitivity can be easily provided. If the portion of R 1 and R 2 and the photosensitive group, 10 mol% or more with respect to the sum of R 1 and R 2 and R 7 which will be described later in the general formula (IV) and R 8 is a photosensitive group Is preferred.
【0011】重合性不飽和二重結合を有する基として
は、例えば、下記一般式(III)Examples of the group having a polymerizable unsaturated double bond include, for example, the following general formula (III)
【化9】 (但し、R3、R4及びR5は、水素、アルキル基、フェ
ニル基、ビニル基及びプロペニル基からそれぞれ独立に
選択された基であり、R6は2価の有機基を示す)で表
される有機基が高感度の感光性を付与できるため好まし
い。前記アルキル基としては炭素原子数1〜4のものが
好ましい。また、R6で示される2価の有機基として
は、メチレン基、エチレン基、プロピレン基等の炭素原
子数1〜4のアルキレン基が好ましい。特に、メタクリ
ロイルオキシアルキル基及びアクリロイルオキシアルキ
ル基(アルキルの炭素数が1〜4のもの)は、高い感度
を実現するのみならず、合成も容易であるため本発明に
好適である。Embedded image (However, R 3 , R 4 and R 5 are each independently selected from hydrogen, an alkyl group, a phenyl group, a vinyl group and a propenyl group, and R 6 represents a divalent organic group.) The organic group to be used is preferable because it can impart high-sensitivity photosensitivity. The alkyl group preferably has 1 to 4 carbon atoms. The divalent organic group represented by R 6 is preferably an alkylene group having 1 to 4 carbon atoms such as a methylene group, an ethylene group, and a propylene group. In particular, a methacryloyloxyalkyl group and an acryloyloxyalkyl group (alkyl having 1 to 4 carbon atoms) are suitable for the present invention because they not only achieve high sensitivity but also are easy to synthesize.
【0012】本発明で用いるポリイミド前駆体におい
て、一般式(I)で示される繰り返し単位の他に下記一
般式(IV)で示される繰り返し単位を含んでいてもよ
い。The polyimide precursor used in the present invention may contain a repeating unit represented by the following general formula (IV) in addition to the repeating unit represented by the general formula (I).
【化10】 (式中、X′は四価の有機基を示し、Yは二価の有機基
を示し、R7及びR8は各々独立にOH又は一価の有機基
を示す)Embedded image (In the formula, X ′ represents a tetravalent organic group, Y represents a divalent organic group, and R 7 and R 8 each independently represent OH or a monovalent organic group.)
【0013】この場合は、透明性や機械強度等の点か
ら、一般式(I)で示される繰り返し単位が全繰り返し
単位中10モル%以上であることが好ましく、30モル
%以上であることがより好ましく、50モル%以上であ
ることがさらに好ましい。In this case, the content of the repeating unit represented by the general formula (I) is preferably at least 10 mol%, more preferably at least 30 mol%, of all the repeating units from the viewpoints of transparency and mechanical strength. More preferably, it is even more preferably at least 50 mol%.
【0014】一般式(IV)におけるX′は一般式(I)
におけるXと同様のものが挙げられ、好ましいものも同
様である。また、R7及びR8は一般式(I)におけるR
1及びR2と同様のものが挙げられ、好ましいものも同様
である。Yは、2価の有機基であり、一般式(I)にお
いて示されるテトラフルオロビフェニレン基以外のもの
であり、テトラカルボン酸またはその誘導体と反応して
ポリイミド前駆体を形成し得るジアミン化合物の残基で
あることが好ましい。前記2価の有機基としては、芳香
族基、脂肪族基、脂環を含む基、シロキサン結合を含む
基などが挙げられ、芳香族基、脂肪族基及び脂環を含む
基の場合は炭素原子数が6〜18のものが好ましく、前
記炭素原子数を有する芳香族基がより好ましい。ここ
で、芳香族基とは、芳香環(ベンゼン環、ナフタレン環
等)を含む2価の有機基であり、その2個の結合部位が
芳香環から直接でているものが好ましく、この場合その
2個の結合部位は同一の芳香環からでていても異なった
芳香環から出ていてもよい。X 'in the general formula (IV) is represented by the general formula (I)
And the preferable ones are also the same. R 7 and R 8 are the same as R 7 in the general formula (I).
The same as 1 and R 2 can be mentioned, and the preferable ones are also the same. Y is a divalent organic group other than the tetrafluorobiphenylene group represented by the general formula (I), and is a residue of a diamine compound capable of forming a polyimide precursor by reacting with a tetracarboxylic acid or a derivative thereof. It is preferably a group. Examples of the divalent organic group include an aromatic group, an aliphatic group, a group containing an alicyclic ring, and a group containing a siloxane bond. In the case of a group containing an aromatic group, an aliphatic group and an alicyclic ring, carbon is used. Those having 6 to 18 atoms are preferable, and aromatic groups having the above-mentioned number of carbon atoms are more preferable. Here, the aromatic group is a divalent organic group containing an aromatic ring (a benzene ring, a naphthalene ring, or the like), and it is preferable that the two bonding sites be directly from the aromatic ring. The two binding sites may be from the same aromatic ring or may be from different aromatic rings.
【0015】本発明のポリイミド前駆体は、既に知られ
た各種製造法により得られる。材料としては、テトラカ
ルボン酸若しくはその誘導体、2,2′,6,6′−テ
トラフルオロ−4,4′−ジアミノビフェニルを含むジ
アミン、必要に応じて、側鎖を構成する原料となるアル
コール、アミン等が用いられる。一般式(I)において
R1及びR2がOHである場合は、テトラカルボン酸無水
物とジアミンを必要に応じて用いる有機溶媒中で反応さ
せることにより得ることができる。R1及びR2が一価の
有機基である場合で、−O−を介するものの場合は、テ
トラカルボン酸二無水物とヒドロキシ基含有化合物を混
合して反応させ、テトラカルボン酸のハーフエステルを
製造した後、塩化チオニルにより酸クロリド化し、つい
で、ジアミンと反応させる方法や、前記テトラカルボン
酸ハーフエステルをカルボジイミド類を縮合剤としてジ
アミンと反応させる方法等により合成することができ
る。R1及びR2が一価の有機基である場合で、−NH−
を介するものの場合は、テトラカルボン酸無水物とジア
ミンを必要に応じて用いる有機溶媒中で反応させ、つい
でイソシアネート化合物を反応させることにより製造す
ることができる。The polyimide precursor of the present invention can be obtained by various known production methods. Materials include tetracarboxylic acid or a derivative thereof, a diamine containing 2,2 ', 6,6'-tetrafluoro-4,4'-diaminobiphenyl, an alcohol as a raw material constituting a side chain, if necessary, An amine or the like is used. When R 1 and R 2 are OH in the general formula (I), they can be obtained by reacting a tetracarboxylic anhydride and a diamine in an organic solvent used as required. When R 1 and R 2 are monovalent organic groups, and in the case of via —O—, tetracarboxylic dianhydride and a hydroxy group-containing compound are mixed and reacted to form a half ester of tetracarboxylic acid. After the production, it can be synthesized by a method of acid chloride with thionyl chloride and then reacting with a diamine, or a method of reacting the tetracarboxylic acid half ester with a diamine using a carbodiimide as a condensing agent. When R 1 and R 2 are monovalent organic groups,
In the case where the reaction is carried out, the compound can be produced by reacting a tetracarboxylic anhydride and a diamine in an organic solvent used as required, and then reacting with an isocyanate compound.
【0016】ポリイミド前駆体の材料となるテトラカル
ボン酸としては、例えば、オキシジフタル酸、ピロメリ
ット酸、3,3′,4,4′−ベンゾフェノンテトラカ
ルボン酸、3,3′,4,4′−ビフェニルテトラカル
ボン酸、1,2,5,6−ナフタレンテトラカルボン
酸、2,3,6,7−ナフタレンテトラカルボン酸、
1,4,5,8−ナフタレンテトラカルボン酸、2,
3,5,6−ピリジンテトラカルボン酸、3,4,9,
10−ペリレンテトラカルボン酸、スルホニルジフタル
酸、m−ターフェニル−3,3′,4,4′−テトラカ
ルボン酸、p−ターフェニル−3,3′,4,4′−テ
トラカルボン酸、1,1,1,3,3,3−ヘキサフル
オロ−2,2−ビス(2,3−又は3,4−ジカルボキ
シフェニル)プロパン、2,2−ビス(2,3−又は
3,4−ジカルボキシフェニル)プロパン、2,2−ビ
ス{4′−(2,3−又は3,4−ジカルボキシフェノ
キシ)フェニル}プロパン、1,1,1,3,3,3−
ヘキサフルオロ−2,2−ビス{4′−(2,3−又は
3,4−ジカルボキシフェノキシ)フェニル}プロパ
ン、下記一般式(V)Examples of the tetracarboxylic acid used as the material of the polyimide precursor include oxydiphthalic acid, pyromellitic acid, 3,3 ', 4,4'-benzophenonetetracarboxylic acid, 3,3', 4,4'- Biphenyltetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid,
1,4,5,8-naphthalenetetracarboxylic acid, 2,
3,5,6-pyridinetetracarboxylic acid, 3,4,9,
10-perylenetetracarboxylic acid, sulfonyldiphthalic acid, m-terphenyl-3,3 ', 4,4'-tetracarboxylic acid, p-terphenyl-3,3', 4,4'-tetracarboxylic acid, 1,1,1,3,3,3-hexafluoro-2,2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis (2,3- or 3,4 -Dicarboxyphenyl) propane, 2,2-bis {4 '-(2,3- or 3,4-dicarboxyphenoxy) phenyl} propane, 1,1,1,3,3,3-
Hexafluoro-2,2-bis {4 '-(2,3- or 3,4-dicarboxyphenoxy) phenyl} propane, the following general formula (V)
【化11】 (式中、R9及びR10は一価の炭化水素基を示し、それ
ぞれ同一でも異なっていてもよく、sは1以上の整数で
ある)で表されるテトラカルボン酸等の芳香族テトラカ
ルボン酸などが挙げられ、これらは単独で又は2種類以
上を組み合わせて使用される。Embedded image (Wherein R 9 and R 10 represent a monovalent hydrocarbon group, and may be the same or different, and s is an integer of 1 or more). Acids and the like are used, and these are used alone or in combination of two or more.
【0017】これらの中で、光線透過率と熱膨張係数を
調整しやすいことから、オキシジフタル酸、ピロメリッ
ト酸、3,3′,4,4′−ベンゾフェノンテトラカル
ボン酸及び3,3′,4,4′−ビフェニルテトラカル
ボン酸が好ましく、オキシジフタル酸、ピロメリット酸
及び3,3′,4,4′−ビフェニルテトラカルボン酸
がより好ましい。テトラカルボン酸の誘導体としては、
例えば、前記各種テトラカルボン酸の二無水物、テトラ
カルボン酸の塩化物等が挙げられる。Among them, oxydiphthalic acid, pyromellitic acid, 3,3 ', 4,4'-benzophenonetetracarboxylic acid and 3,3', 4 are preferable because the light transmittance and the coefficient of thermal expansion are easily adjusted. 4,4'-biphenyltetracarboxylic acid is preferred, and oxydiphthalic acid, pyromellitic acid and 3,3 ', 4,4'-biphenyltetracarboxylic acid are more preferred. As derivatives of tetracarboxylic acid,
For example, dianhydrides of the above-mentioned various tetracarboxylic acids, chlorides of the tetracarboxylic acids and the like can be mentioned.
【0018】前記一般式(IV)を与えるジアミンとして
は、4,4′−(又は3,4′−、3,3′−、2,
4′−若しくは2,2′−)ジアミノジフェニルエーテ
ル、4,4′−(又は3,4′−、3,3′−、2,
4′−若しくは、2,2′−)ジアミノジフェニルメタ
ン、4,4′−(又は3,4′−、3,3′−、2,
4′−若しくは、2,2′−)ジアミノジフェニルスル
ホン、4,4′−(又は3,4′−、3,3′−、2,
4′−若しくは、2,2′−)ジアミノジフェニルスル
フィド、パラフェニレンジアミン、メタフェニレンジア
ミン、p−キシリレンジアミン、m−キシリレンジアミ
ン、o−トリジン、o−トリジンスルホン、4,4′−
メチレン−ビス−(2,6−ジエチルアニリン)、4,
4′−メチレン−ビス−(2,6−ジイソプロピルアニ
リン)、2,4−ジアミノメシチレン、1,5−ジアミ
ノナフタレン、4,4′−ベンゾフェノンジアミン、ビ
ス−{4−(4′−アミノフェノキシ)フェニル}スル
ホン、1,1,1,3,3,3−ヘキサフルオロ−2,
2−ビス(4−アミノフェニル)プロパン、2,2−ビ
ス{4−(4′−アミノフェノキシ)フェニル}プロパ
ン、3,3′−ジメチル−4,4′−ジアミノジフェニ
ルメタン、3,3′,5,5′−テトラメチル−4,
4′−ジアミノジフェニルメタン、ビス{4−(3′−
アミノフェノキシ)フェニル}スルホン、2,2−ビス
(4−アミノフェニル)プロパンなどが挙げられ、これ
らは単独で又は2種類以上を組み合わせて使用される。The diamine giving the general formula (IV) includes 4,4 '-(or 3,4'-, 3,3'-, 2,
4'- or 2,2'-) diaminodiphenyl ether, 4,4'- (or 3,4'-, 3,3'-, 2,
4'- or 2,2'-) diaminodiphenylmethane, 4,4'- (or 3,4'-, 3,3'-, 2,
4'- or 2,2 '-) diaminodiphenylsulfone, 4,4'- (or 3,4'-, 3,3'-, 2,
4'- or 2,2 '-) diaminodiphenyl sulfide, paraphenylenediamine, metaphenylenediamine, p-xylylenediamine, m-xylylenediamine, o-tolidine, o-tolidine sulfone, 4,4'-
Methylene-bis- (2,6-diethylaniline), 4,
4'-methylene-bis- (2,6-diisopropylaniline), 2,4-diaminomesitylene, 1,5-diaminonaphthalene, 4,4'-benzophenonediamine, bis- {4- (4'-aminophenoxy) Phenyl disulfone, 1,1,1,3,3,3-hexafluoro-2,
2-bis (4-aminophenyl) propane, 2,2-bis {4- (4'-aminophenoxy) phenyl} propane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetramethyl-4,
4'-diaminodiphenylmethane, bis {4- (3'-
Examples thereof include aminophenoxy) phenyl} sulfone and 2,2-bis (4-aminophenyl) propane, and these are used alone or in combination of two or more.
【0019】また、一般式(I)において用いられる
2,2′,6,6′−テトラフルオロ−4,4′―ジア
ミノビフェニル以外のフッ素原子含有ジアミンとして、
2,2′−ジフルオロ−4,4′―ジアミノビフェニ
ル、2,2′−ジ(トリフルオロメチル)−4,4′―
ジアミノビフェニル、2,2′,6,6′−テトラ(ト
リフルオロメチル)−4,4’―ジアミノビフェニル等
を用いることもできる。この場合、フッ素原子を含むジ
アミンの量は、全ジアミン総量の10〜100モル%の
範囲とすることが好ましく、30〜100モル%とする
ことがより好ましく、50〜100モル%とすることが
さらに好ましい。この使用量が10モル%未満では、透
過率が低下する傾向にあり、また、ポリイミド膜の機械
特性及び熱特性が低下する傾向にある。As fluorine-containing diamines other than 2,2 ', 6,6'-tetrafluoro-4,4'-diaminobiphenyl used in the general formula (I),
2,2'-difluoro-4,4'-diaminobiphenyl, 2,2'-di (trifluoromethyl) -4,4'-
Diaminobiphenyl, 2,2 ', 6,6'-tetra (trifluoromethyl) -4,4'-diaminobiphenyl and the like can also be used. In this case, the amount of the diamine containing a fluorine atom is preferably in the range of 10 to 100 mol% of the total amount of all diamines, more preferably 30 to 100 mol%, and more preferably 50 to 100 mol%. More preferred. If the amount is less than 10 mol%, the transmittance tends to decrease, and the mechanical and thermal properties of the polyimide film tend to decrease.
【0020】また上記ジアミンとしては、その他、接着
性向上のために、下記一般式(VI)In addition, the above-mentioned diamines may have the following general formula (VI) in order to improve adhesion.
【化12】 (式中、R11及びR12は二価の炭化水素基を示し、それ
ぞれ同一でも異なっていてもよく、R13及びR14は一価
の炭化水素基を示し、それぞれ同一でも異なっていても
よく、tは1以上の整数である)で表されるジアミノポ
リシロキサン等の脂肪族ジアミンを使用することもでき
る。R11及びR12としては、メチレン基、エチレン基、
プロピレン基等のアルキレン基、フェニレン基等のアリ
ーレン基、それらの結合基などが挙げられ、R13及びR
14としては、メチル基、エチル基等のアルキル基、フェ
ニル基等のアリール基などが挙げられる。R11、R12、
R13及びR14で示される基は、それぞれ総炭素数が1〜
10のものが好ましい。併用する場合、これらはジアミ
ン化合物の総量中、30モル%以下で使用することが好
ましく、20モル%以下の範囲で使用することがより好
ましく、10モル%以下の範囲で使用することがさらに
好ましい。Embedded image (Wherein, R 11 and R 12 each represent a divalent hydrocarbon group, which may be the same or different, and R 13 and R 14 each represent a monovalent hydrocarbon group, each of which may be the same or different. Often, t is an integer of 1 or more.) It is also possible to use an aliphatic diamine such as diaminopolysiloxane. R 11 and R 12 represent a methylene group, an ethylene group,
R 13 and R 13 include alkylene groups such as propylene groups, arylene groups such as phenylene groups, and bonding groups thereof.
Examples of 14 include an alkyl group such as a methyl group and an ethyl group, and an aryl group such as a phenyl group. R 11 , R 12 ,
The groups represented by R 13 and R 14 each have a total carbon number of 1 to
Ten are preferred. When used in combination, these are preferably used in an amount of 30 mol% or less, more preferably in an amount of 20 mol% or less, and still more preferably in an amount of 10 mol% or less, based on the total amount of the diamine compound. .
【0021】また、耐熱性向上のために、4,4′−ジ
アミノジフェニルエーテル−3−スルホンアミド、3,
4′−ジアミノジフェニルエーテル−4−スルホンアミ
ド、3,4′−ジアミノジフェニルエーテル−3′−ス
ルホンアミド、3,3′−ジアミノジフェニルエーテル
−4−スルホンアミド、4,4′−ジアミノジフェニル
エーテル−3−カルボキサミド、3,4′−ジアミノジ
フェニルエーテル−4−カルボキサミド、3,4′−ジ
アミノジフェニルエーテル−3′−カルボキサミド、
3,3′−ジアミノジフェニルエーテル−4−カルボキ
サミド等のスルホンアミド基又はカルボキサミド基を有
するジアミン化合物を単独で又は2種以上併用すること
もできる。併用する場合、これらはジアミン化合物の総
量中、30モル%以下で使用することが好ましく、20
モル%以下の範囲で使用することがより好ましく、10
モル%以下の範囲で使用することがさらに好ましい。In order to improve heat resistance, 4,4'-diaminodiphenyl ether-3-sulfonamide,
4'-diaminodiphenylether-4-sulfonamide, 3,4'-diaminodiphenylether-3'-sulfonamide, 3,3'-diaminodiphenylether-4-sulfonamide, 4,4'-diaminodiphenylether-3-carboxamide, 3,4'-diaminodiphenyl ether-4-carboxamide, 3,4'-diaminodiphenyl ether-3'-carboxamide,
Diamine compounds having a sulfonamide group or a carboxamide group such as 3,3'-diaminodiphenyl ether-4-carboxamide can be used alone or in combination of two or more. When used in combination, these are preferably used in an amount of 30 mol% or less based on the total amount of the diamine compounds.
More preferably, it is used in a range of not more than 10 mol%.
More preferably, it is used in the range of mol% or less.
【0022】テトラカルボン酸又はその誘導体及びジア
ミンの反応に使用する有機溶媒としては、生成するポリ
イミド前駆体を完全に溶解する極性溶媒が好ましく、例
えば、N−メチル−2−ピロリドン、N,N−ジメチル
アセトアミド、N,N−ジメチルホルムアミド、ジメチ
ルスルホキシド、テトラメチル尿素、ヘキサメチルリン
酸トリアミド、γ−ブチロラクトン等が好ましいものと
して挙げられる。The organic solvent used for the reaction of the tetracarboxylic acid or its derivative and the diamine is preferably a polar solvent which completely dissolves the polyimide precursor to be produced. For example, N-methyl-2-pyrrolidone, N, N- Dimethylacetamide, N, N-dimethylformamide, dimethylsulfoxide, tetramethylurea, hexamethylphosphoric triamide, and γ-butyrolactone are preferred.
【0023】また、この極性溶媒以外に、ケトン類、エ
ステル類、ラクトン類、エーテル類、ハロゲン化炭化水
素類、炭化水素類等も使用することができ、例えば、ア
セトン、ジエチルケトン、メチルエチルケトン、メチル
イソブチルケトン、シクロヘキサノン、酢酸メチル、酢
酸エチル、酢酸ブチル、シュウ酸ジエチル、マロン酸ジ
エチル、ジエチルエーテル、エチレングリコールジメチ
ルエーテル、ジエチレングリコールジメチルエーテル、
テトラヒドロフラン、ジクロロメタン、1,2−ジクロ
ロエタン、1,4−ジクロロブタン、トリクロロエタ
ン、クロロベンゼン、o−ジクロロベンゼン、ヘキサ
ン、ヘプタン、オクタン、ベンゼン、トルエン、キシレ
ン等が挙げられる。これらの有機溶媒は、単独で又は2
種類以上を組み合わせて使用される。In addition to the polar solvent, ketones, esters, lactones, ethers, halogenated hydrocarbons, hydrocarbons and the like can also be used. For example, acetone, diethyl ketone, methyl ethyl ketone, methyl Isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether,
Examples include tetrahydrofuran, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, o-dichlorobenzene, hexane, heptane, octane, benzene, toluene, xylene and the like. These organic solvents can be used alone or
Used in combination of more than one type.
【0024】テトラカルボン酸又はその誘導体及びジア
ミンの反応においては、反応の種類により異なるが、両
者を、一方の量に対し他方を80〜120モル%で配合
することが好ましく、特に等モルで配合することが好ま
しい。また溶媒量は、テトラカルボン酸又はその誘導体
及びジアミンの合計量に対して、2〜10倍の重量で用
いることが好ましい。反応温度及び時間は、酸無水物と
ジアミンの場合は、室温で10〜50時間行うことが好
ましい。In the reaction of the tetracarboxylic acid or its derivative and the diamine, although it depends on the type of reaction, it is preferable to mix both of them in an amount of 80 to 120 mol% with respect to one amount, and particularly to equimolar amounts. Is preferred. The amount of the solvent is preferably 2 to 10 times the weight of the total amount of the tetracarboxylic acid or its derivative and the diamine. The reaction temperature and time are preferably 10 to 50 hours at room temperature in the case of an acid anhydride and a diamine.
【0025】一般式(I)及び(IV)における側鎖であ
るR1、R2、R7、R8を導入するために用いられる化合
物としては、メタノール、エタノール、イソプロパノー
ル、n−プロパノール、n−ブタノール等のアルキルア
ルコール、ベンジルアルコール等のアリールアルコー
ル、ビニルアルコール、アリルアルコールなどのアルコ
ール化合物、ヒドロキシメチルアクリレート、ヒドロキ
シメチルメタクリレート、ヒドロキシエチルアクリレー
ト、ヒドロキシエチルメタクリレート、ヒドロキシプロ
ピルアクリレート、ヒドロキシプロピルメタクリレート
等のヒドロキシアルキルアクリレートまたはメタクリレ
ート等の水酸基と重合性不飽和二重結合を有する化合
物、モノアルキルアミン、ジアルキルアミン等のアミ
ン、アルキルモノイソシアネート等が挙げられ、これら
は単独で又は2種類以上を組み合わせて使用される。前
記側鎖を導入する場合、そのために用いられる化合物の
量は、特に制限されず、反応の種類により異なるが、全
ての繰り返し単位に側鎖を導入する場合、テトラカルボ
ン酸1モルに対して2モル以上、好ましくは2〜3モル
使用する。以上のようにして、本発明のポリイミド前駆
体が得られる。The compounds used to introduce the side chains R 1 , R 2 , R 7 and R 8 in the general formulas (I) and (IV) include methanol, ethanol, isopropanol, n-propanol and n-propanol. Alkyl alcohols such as butanol, aryl alcohols such as benzyl alcohol, alcohol compounds such as vinyl alcohol and allyl alcohol, hydroxymethyl acrylate, hydroxymethyl methacrylate, hydroxyethyl acrylate, hydroxyethyl methacrylate, hydroxypropyl acrylate and hydroxypropyl methacrylate. Compounds having a hydroxyl group and a polymerizable unsaturated double bond such as alkyl acrylate or methacrylate; amines such as monoalkylamine and dialkylamine; alkylmonoisomers Cyanates and the like can be mentioned, and these are used alone or in combination of two or more. When the side chain is introduced, the amount of the compound used therefor is not particularly limited and varies depending on the type of the reaction. However, when the side chain is introduced into all the repeating units, 2 to 1 mol of the tetracarboxylic acid is used. Mol or more, preferably 2 to 3 mol. As described above, the polyimide precursor of the present invention is obtained.
【0026】得られるポリイミド前駆体は、重量平均分
子量が、5,000〜500,000とすることが好ま
しく、10,000〜200,000がより好ましい。
重量平均分子量が5,000未満では、イミド化後の膜
が脆いなどの膜特性に欠点が生じる傾向があり、50
0,000を超えると、ポリイミド前駆体の溶液が高粘
度になるため作業性に劣る傾向がある。なお、重量平均
分子量は、ゲル浸透クロマトグラフィー法(GPC)に
より測定し、標準ポリスチレン検量線から換算すること
により求めることができる。The obtained polyimide precursor preferably has a weight average molecular weight of 5,000 to 500,000, more preferably 10,000 to 200,000.
When the weight-average molecular weight is less than 5,000, there is a tendency that the film after imidization has a disadvantage in film characteristics such as brittleness and the like.
If it exceeds 000, the solution of the polyimide precursor becomes high in viscosity, so that workability tends to be poor. The weight average molecular weight can be determined by measuring by gel permeation chromatography (GPC) and converting from a standard polystyrene calibration curve.
【0027】本発明のポリイミドは、上記ポリイミド前
駆体をイミド閉環することにより合成することができ
る。このイミド閉環は、通常、加熱により行うことがで
きる。加熱条件は特に制限はないが、加熱温度として
は、80〜450℃とすることが好ましい。80℃未満
では閉環反応が遅くなる傾向にあり、450℃を超える
と生成するポリイミドが劣化する傾向にある。また、加
熱時間としては、10〜100分間とすることが好まし
い。この時間が10分未満では、閉環反応が遅くなる傾
向にあり、100分を超えると、生成するポリイミドが
劣化する傾向にあり、作業性も低下する傾向にある。The polyimide of the present invention can be synthesized by subjecting the above polyimide precursor to imide ring closure. This imide ring closure can be usually performed by heating. The heating conditions are not particularly limited, but the heating temperature is preferably from 80 to 450 ° C. If the temperature is lower than 80 ° C., the ring closure reaction tends to be slow, and if the temperature exceeds 450 ° C., the produced polyimide tends to deteriorate. The heating time is preferably set to 10 to 100 minutes. If the time is less than 10 minutes, the ring-closing reaction tends to be slow, and if it exceeds 100 minutes, the produced polyimide tends to deteriorate and the workability tends to decrease.
【0028】本発明のポリイミド前駆体及びポリイミド
は、半導体装置、高密度多層配線板等の電子部品の層間
絶縁膜、表面保護膜の材料として好適である。また、こ
れらの用途において、感光性基を導入した前記ポリイミ
ド前駆体及び光開始剤等を含む組成物または前記ポリイ
ミド前駆体と感光性化合物の組成物を用いることによ
り、厚膜でも、g線、i線等の露光でも、ネガ型または
ポジ型の良好なパターンが形成できる。さらに、高光線
透過性を有することから光導波路にも使用することがで
きる。The polyimide precursor and polyimide of the present invention are suitable as materials for interlayer insulating films and surface protective films of electronic components such as semiconductor devices and high-density multilayer wiring boards. In these applications, by using a composition containing the polyimide precursor having a photosensitive group introduced therein and a photoinitiator or a composition of the polyimide precursor and a photosensitive compound, even a thick film, g-line, Even with exposure to i-line or the like, a favorable negative or positive pattern can be formed. Furthermore, since it has high light transmittance, it can be used for an optical waveguide.
【0029】[0029]
【実施例】以下、実施例により本発明を説明する。 実施例1〜3 攪拌機及び温度計を備えた100mlのフラスコに、表1
に示す量の2,2′,6,6′−テトラフルオロ−4,
4′−ジアミノビフェニル(TFAP)及びN−メチル
−2−ピロリドンを加え、室温で攪拌溶解し、この溶液
に表1に示した酸成分を添加し、30時間攪拌し、粘稠
なポリイミド前駆体の溶液を得た。さらに、この溶液
を、70℃で5時間加熱し、粘度を100ポイズ(固形
分25重量%)に調節し、ポリイミド前駆体の溶液(P
I−1〜PI−3)とした。表1に合わせて重量平均分
子量を示す。The present invention will be described below with reference to examples. Examples 1 to 3 In a 100 ml flask equipped with a stirrer and a thermometer, Table 1 was added.
2,2 ', 6,6'-tetrafluoro-4,
4'-Diaminobiphenyl (TFAP) and N-methyl-2-pyrrolidone were added and dissolved by stirring at room temperature. The acid component shown in Table 1 was added to this solution, and the mixture was stirred for 30 hours to obtain a viscous polyimide precursor. Was obtained. Further, this solution was heated at 70 ° C. for 5 hours, the viscosity was adjusted to 100 poise (solid content: 25% by weight), and the polyimide precursor solution (P
I-1 to PI-3). The weight average molecular weight is shown according to Table 1.
【0030】なお、粘度は、E型粘度計(東機産業(株)
製、EHD型)を使用し、温度が25℃、回転数が2.
5rpmで測定した。重量平均分子量は、ゲル浸透クロマ
トグラフィー法(GPC、装置は(株)日立製作所製)を
用いて、標準ポリスチレン換算により求めた。また、得
られたポリイミド前駆体の溶液(PI−1〜PI−3)
を乾燥させたものを、KBr法により、赤外吸収スペク
トル(日本電子(株)製、JIR−100型)を測定した
ところ、いずれも、1600cm-1付近にアミド基のC=
Oの吸収と、3300cm-1付近にN−Hの吸収が確認さ
れた。The viscosity was measured using an E-type viscometer (Toki Sangyo Co., Ltd.)
, EHD type) at a temperature of 25 ° C and a rotation speed of 2.
It was measured at 5 rpm. The weight average molecular weight was determined by gel permeation chromatography (GPC, apparatus manufactured by Hitachi, Ltd.) in terms of standard polystyrene. Moreover, the solution of the obtained polyimide precursor (PI-1 to PI-3)
The dried product was measured for an infrared absorption spectrum (manufactured by JEOL Ltd., JIR-100 type) by the KBr method. In each case, the C = of the amide group was found around 1600 cm -1.
O absorption and N-H absorption were confirmed at around 3300 cm -1 .
【0031】[0031]
【表1】 [Table 1]
【0032】各実施例のポリイミド前駆体を、100℃
で30分、200℃で30分、350℃で60分加熱し
てイミド閉環し、ポリイミドを得た。得られたポリイミ
ドの一部についてKBr法により、赤外吸収スペクトル
を測定したところ、1780cm-1付近にイミドの特性吸
収が確認された。The polyimide precursor of each example was heated at 100 ° C.
For 30 minutes, at 200 ° C. for 30 minutes, and at 350 ° C. for 60 minutes to close the imide and obtain a polyimide. When the infrared absorption spectrum of a part of the obtained polyimide was measured by the KBr method, characteristic absorption of imide was confirmed at around 1780 cm -1 .
【0033】各実施例で得られた各ポリイミド前駆体の
光透過率、イミド化後の熱膨張係数及び残留応力を以下
の方法により評価し、これらの評価結果を表2に示し
た。光透過率は、得られた,感光性基を付与した各ポリ
イミド前駆体の樹脂溶液をスピンコートし、85℃で3
分間、さらに105℃で3分間乾燥して得られた塗膜
(10μm)を、分光光度計で測定した。熱膨張係数
は、膜厚10μmのポリイミドフィルムを昇温速度10
℃/分、荷重10gの条件で熱物理分析装置(TMA)
で測定した。残留応力は6インチシリコンウエハ上にポ
リイミド膜を形成し、テンコール社製応力測定装置(F
LX−2320型)で測定した。The light transmittance, the coefficient of thermal expansion after imidization, and the residual stress of each polyimide precursor obtained in each example were evaluated by the following methods. The evaluation results are shown in Table 2. The light transmittance was measured at 85 ° C. by spin coating the obtained resin solution of each polyimide precursor having a photosensitive group.
The coating film (10 μm) obtained by drying at 105 ° C. for 3 minutes and then at 105 ° C. was measured with a spectrophotometer. The coefficient of thermal expansion is as follows.
Thermophysical analyzer (TMA) under conditions of ° C / min and load of 10g
Was measured. Residual stress is obtained by forming a polyimide film on a 6-inch silicon wafer and using a Tencor Co. stress measuring device (F
LX-2320).
【0034】[0034]
【表2】 [Table 2]
【0035】比較例1〜3 実施例1において、配合成分を表3のものに変えた以外
は同様にしてポリイミド前駆体を製造し、同様に評価し
た。その結果を表4に示す。Comparative Examples 1 to 3 Polyimide precursors were produced in the same manner as in Example 1 except that the ingredients were changed to those shown in Table 3, and the same evaluation was conducted. Table 4 shows the results.
【0036】[0036]
【表3】 [Table 3]
【0037】[0037]
【表4】 [Table 4]
【0038】応用例 上記各実施例及び比較例で得られた、各ポリイミド前駆
体(PAA−1〜PAA−6)の溶液10gに対して、
2,6−ビス(4′−アジドベンザル)−4−カルボキ
シシクロヘキサノン(CA)0.027g、4,4′−
ビス(ジエチルアミノ)ベンゾフェノン(EAB)0.
027g及び1−フェニル−2−(o−エトキシカルボ
ニル)オキシイミノプロパン−1−オン(PDO)0.
054gを加え、さらに、ポリイミド前駆体のカルボキ
シル基と当量のジメチルアミノプロピルメタクリレート
(MDAP)を加え、攪拌混合して、均一な感光性樹脂
組成物溶液を得た。得られた感光性樹脂組成物溶液を、
フィルタ濾過し、それぞれシリコンウエハ上に滴下スピ
ンコートした。次いで、ホットプレートを用いて、10
0℃で150秒間加熱し、23μmの塗膜を形成した
後、パターンマスクし、i線ステッパで、露光量200
mJ/cm2で露光した。これを、さらに100℃で60秒間
加熱し、N−メチル−2−ピロリドン/水(75/25
(重量比))の混合溶液を用いて、パドル現像し、これ
を、100℃で30分間、200℃で30分間、350
℃で60分間加熱して、ポリイミドのレリーフパターン
を得た。パターンの解像度をスルホールテストパターン
を用いて、現像可能なスルホールの最小の大きさとして
評価した。結果を表5に示す。Application Example 10 g of each polyimide precursor (PAA-1 to PAA-6) solution obtained in each of the above Examples and Comparative Examples was
0.027 g of 2,6-bis (4'-azidobenzal) -4-carboxycyclohexanone (CA), 4,4'-
Bis (diethylamino) benzophenone (EAB)
027 g and 1-phenyl-2- (o-ethoxycarbonyl) oxyiminopropan-1-one (PDO).
054 g was added, and dimethylaminopropyl methacrylate (MDAP) equivalent to the carboxyl group of the polyimide precursor was further added, followed by stirring and mixing to obtain a uniform photosensitive resin composition solution. The obtained photosensitive resin composition solution,
The solution was filtered, and each of them was dropped and spin-coated on a silicon wafer. Then, using a hot plate, 10
After heating at 0 ° C. for 150 seconds to form a coating film of 23 μm, a pattern mask was applied, and an exposure amount of 200 was applied with an i-line stepper.
Exposure was performed at mJ / cm 2 . This was further heated at 100 ° C. for 60 seconds, and N-methyl-2-pyrrolidone / water (75/25
(Weight ratio)), and paddle development was performed at 100 ° C. for 30 minutes, at 200 ° C. for 30 minutes, at 350 ° C.
It heated at 60 degreeC for 60 minutes, and obtained the relief pattern of the polyimide. The resolution of the pattern was evaluated as the minimum size of the developable through hole using the through hole test pattern. Table 5 shows the results.
【0039】[0039]
【表5】 [Table 5]
【0040】また、実施例1〜3のレリーフパターンか
ら得られたポリイミドパターンは、レリーフパターンの
パターン形状が矩形状で解像度が良好であることを反映
して台形状の良好なパターン形状を有していたが、比較
例1〜3のレリーフパターンから得られたポリイミドパ
ターンは、レリーフパターンのパターン形状が逆台形状
で解像度が不良であることを反映して逆台形状の好まし
くないパターン形状を有していた。The polyimide patterns obtained from the relief patterns of Examples 1 to 3 have a good trapezoidal pattern shape, reflecting that the pattern shape of the relief pattern is rectangular and the resolution is good. However, the polyimide patterns obtained from the relief patterns of Comparative Examples 1 to 3 had an undesired inverted trapezoidal pattern shape reflecting that the pattern shape of the relief pattern was inverted trapezoidal and the resolution was poor. Was.
【0041】[0041]
【発明の効果】請求項1記載のポリイミド前駆体は、光
透過性が良好であり、低熱膨張性で、誘電率の低いポリ
イミドを与える、感光性樹脂組成物等に好適なものであ
る。請求項2記載のポリイミド前駆体は、請求項1記載
の発明の効果に加え、さらに耐熱性、低熱膨張性、膜の
機械特性等に優れるものである。請求項3記載のポリイ
ミドの製造法によれば、光透過性が良好であり、低熱膨
張性で、誘電率の低いポリイミドが得られる。請求項4
記載のポリイミドは、光透過性が良好であり、低熱膨張
性で、誘電率の低いものである。The polyimide precursor according to the first aspect is suitable for a photosensitive resin composition or the like which has good light transmittance, low thermal expansion and gives a polyimide having a low dielectric constant. The polyimide precursor according to claim 2 has excellent heat resistance, low thermal expansion property, mechanical properties of the film, etc. in addition to the effects of the invention according to claim 1. According to the method for producing a polyimide according to the third aspect, a polyimide having good light transmittance, low thermal expansion, and a low dielectric constant can be obtained. Claim 4
The polyimide described has good light transmittance, low thermal expansion, and low dielectric constant.
Claims (4)
立にOH又は一価の有機基を示す)で表される繰り返し
単位を有するポリイミド前駆体。1. A compound of the general formula (I) (Wherein X represents a tetravalent organic group, and R 1 and R 2 each independently represent OH or a monovalent organic group).
機基が、 【化2】 より選択される基である請求項1記載のポリイミド前駆
体。2. The tetravalent organic group represented by X in the general formula (I) is: The polyimide precursor according to claim 1, which is a group selected from the group consisting of:
をイミド閉環することを特徴とするポリイミドの製造
法。3. A method for producing a polyimide, comprising imide-closing the polyimide precursor according to claim 1 or 2.
単位を有するポリイミド。4. A compound of the general formula (II) (Wherein, X represents a tetravalent organic group).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19855297A JPH1135684A (en) | 1997-07-24 | 1997-07-24 | Polyimide precursor and polyimide and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19855297A JPH1135684A (en) | 1997-07-24 | 1997-07-24 | Polyimide precursor and polyimide and its production |
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Publication Number | Publication Date |
---|---|
JPH1135684A true JPH1135684A (en) | 1999-02-09 |
Family
ID=16393079
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001000710A1 (en) * | 1999-06-25 | 2001-01-04 | Pi R & D Co., Ltd. | Photosensitive low-permittivity polyimide and method of forming positive polyimide film pattern from the same |
JP2001316579A (en) * | 2000-05-08 | 2001-11-16 | Teijin Ltd | Polyarylate/polyimide composition |
JP2004503413A (en) * | 2000-06-15 | 2004-02-05 | スリーエム イノベイティブ プロパティズ カンパニー | Fine processing of organic optical elements |
KR20150097459A (en) * | 2012-12-21 | 2015-08-26 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | Polyimide precursor, photosensitive resin composition containing said polyimide precursor, and cured-pattern-film manufacturing method and semiconductor device using said photosensitive resin composition |
TWI625361B (en) * | 2012-12-21 | 2018-06-01 | 日立化成杜邦微系統股份有限公司 | Photosensitive resin composition, production method of patterned hardened film using the same and semiconductor device |
US10725379B2 (en) | 2012-12-21 | 2020-07-28 | Hitachi Chemical Dupont Microsystems, Ltd. | Polymide precursor resin composition |
-
1997
- 1997-07-24 JP JP19855297A patent/JPH1135684A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001000710A1 (en) * | 1999-06-25 | 2001-01-04 | Pi R & D Co., Ltd. | Photosensitive low-permittivity polyimide and method of forming positive polyimide film pattern from the same |
JP2001316579A (en) * | 2000-05-08 | 2001-11-16 | Teijin Ltd | Polyarylate/polyimide composition |
JP2004503413A (en) * | 2000-06-15 | 2004-02-05 | スリーエム イノベイティブ プロパティズ カンパニー | Fine processing of organic optical elements |
KR20150097459A (en) * | 2012-12-21 | 2015-08-26 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | Polyimide precursor, photosensitive resin composition containing said polyimide precursor, and cured-pattern-film manufacturing method and semiconductor device using said photosensitive resin composition |
CN104870523A (en) * | 2012-12-21 | 2015-08-26 | 日立化成杜邦微系统股份有限公司 | Polyimide precursor, photosensitive resin composition containing said polyimide precursor, and cured-pattern-film manufacturing method and semiconductor device using said photosensitive resin composition |
US9751984B2 (en) * | 2012-12-21 | 2017-09-05 | Hitachi Chemical Dupont Microsystems, Ltd. | Polyimide precursor, photosensitive resin composition containing said polyimide precursor, and cured-pattern-film manufacturing method and semiconductor device using said photosensitive resin composition |
TWI625361B (en) * | 2012-12-21 | 2018-06-01 | 日立化成杜邦微系統股份有限公司 | Photosensitive resin composition, production method of patterned hardened film using the same and semiconductor device |
TWI658063B (en) * | 2012-12-21 | 2019-05-01 | 日商日立化成杜邦微系統股份有限公司 | Photosensitive resin composition, production method of patterned hardened film using the same, patterned hardened film and semiconductor device |
US10725379B2 (en) | 2012-12-21 | 2020-07-28 | Hitachi Chemical Dupont Microsystems, Ltd. | Polymide precursor resin composition |
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