JPH11345815A - Method and apparatus for electronic component, and the electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To carry out resin injection and resin hardening in a short time, without bubbles in encapsulating resin. SOLUTION: In a manufacturing method for an electronic part component made up of at least two components, such as a substrate 101 and a semiconductor element 103, and these components are joined to each other face. A minute gap (α) between the opposite faces between these components is filled with an encapsulating resin 109. These components 101 and 103 joined to each other face are put in position in dies 105 and 106. The pressure of the inside thereof is reduced, and the encapsulating resin 109 is injected into the dies 105 and 106 under reduced pressure and then is hardened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electronic component such as a semiconductor package used for various electric and electronic devices, a method for manufacturing an electronic component, and an electronic component.

[0002]

2. Description of the Related Art Semiconductor packages contribute to the miniaturization of industrial electronic equipment such as information communication equipment, office electronic equipment, home electronic equipment, measuring equipment, assembly robots, medical electronic equipment, and electronic toys. In addition, it is a component that protects and strengthens the semiconductor element itself.

In order to manufacture a semiconductor package, a semiconductor element and a substrate on which the semiconductor element is mounted are required. Conventionally, a wire bonding method has been mainly used for mounting a semiconductor element on a substrate, but recently, a flip chip method capable of reducing a mounting area of a semiconductor element has become mainstream. In mounting a semiconductor element by the flip-chip method, since the semiconductor element is mounted face down on the substrate, the electrode arrangement of the semiconductor element and the electrode arrangement of the substrate must correspond one to one. Therefore, a high-density substrate, that is, a substrate on which fine lines are formed, is required for a substrate on which a semiconductor element is mounted by a flip-chip method. Further, there is a demand for a substrate in which wiring layers are connected by inner vias in order to reduce the size of the semiconductor package. Substrates satisfying these requirements, that is, substrates suitable for the flip-chip method include a ceramic multilayer wiring substrate, a glass epoxy substrate, and an aramid epoxy substrate.

In the mounting of the semiconductor element by such a flip chip method, the semiconductor element is mounted face down, so that the protection of the semiconductor element and the reliability of the flip chip connection portion are ensured. The sealing resin is filled into the minute gaps formed therebetween. However, in the structure in which the sealing resin is injected, the coefficient of thermal expansion of the semiconductor element often does not match that of the substrate. Therefore, during a thermal shock test such as a heat cycle, stress may be concentrated on a connection portion (bump) and cracks may occur, resulting in a problem such as a connection failure. Therefore, in mounting a semiconductor element by the flip-chip method, the thermal expansion coefficient of the sealing resin is adjusted by selecting an inorganic filler material to be added to the sealing resin, thereby solving the above-mentioned disadvantages in the thermal shock test. I have. That is, by adding a suitable amount of molten SiO ₂ having a small thermal expansion or crystalline SiO ₂ powder having a relatively large thermal expansion to the sealing resin, the thermal expansion of the sealing resin is reduced by the thermal expansion of the semiconductor element and the substrate. The value is about the middle of the thermal expansion.

A specific conventional resin injection method is as follows. That is, as shown in FIG.
1 is mounted on a hot plate 305 by flip chip mounting, and the substrate 303 is mounted on the hot plate 305 so that the sealing resin has a low viscosity to some extent.
Then, the semiconductor element 301 is heated. Then, together with the hot plate 305, the substrate 303, the semiconductor element 301
Is tilted, and the semiconductor device 30 is gradually
A sealing resin is injected into a minute gap between the substrate 1 and the substrate 303.

[0006]

However, in the mounting of the semiconductor element by the above-mentioned conventional flip chip method,
While the viscosity of the sealing resin must be increased due to the inclusion of the inorganic filler in the sealing resin, the minute gap between the semiconductor element and the substrate is as small as about 50 μm.
For this reason, if the resin is poured too early, the resin may not be able to be injected to the inside of the minute gap and may overflow outside the minute gap.
Therefore, in the conventional mounting method, the injection is repeated at regular intervals, so that it takes time to inject the resin, which has been a problem in terms of productivity. In order to reduce the viscosity, the amount of the curing agent added to the sealing resin is adjusted (reduced) so that the heating of the sealing resin does not increase the viscosity of the sealing resin on the contrary. Although it is conceivable to do so, although the viscosity is lowered and the injection becomes easier, the time required for curing after sealing is lengthened and the productivity is deteriorated, and this does not solve the problem.

In order to shorten the injection time, it is conceivable to inject the resin into the minute gap simultaneously from a plurality of sides of the semiconductor element (rectangle). However, in this case, air bubbles cannot be removed and remain in the minute gap, and it is difficult to reliably inject the sealing resin into the minute gap.

As a method of removing bubbles, it is conceivable to remove bubbles by injecting a sealing resin into a minute gap and then placing a semiconductor package (a substrate on which a semiconductor element is mounted) in a vacuum environment. Although this is a deaeration method, the bubbles may be rather large when relatively large bubbles are present, and it cannot be said that the bubbles can be sufficiently removed.

Further, in face-down mounting by bump connection, mechanical connection of the connection portion (connection portion between the electrode of the semiconductor element and the electrode of the substrate) is performed until the sealing resin injected into the minute gap is cured and integrated. Target strength is low. for that reason,
There is a possibility that a connection failure may occur due to a mechanical shock or a thermal shock applied during the step of injecting a resin into the minute gap and curing the resin, such as disconnection.

Further, in the conventional manufacturing method, since the electrical inspection of the semiconductor package cannot be performed until the sealing resin is cured, a package with insufficient connection is produced, so that the yield is reduced. There was also.

Furthermore, in the conventional face-down mounting, the sealing resin is filled into the minute gap between the substrate and the semiconductor element by natural injection without applying pressure to the sealing resin. Therefore, the shape of the sealing resin overflowing from the minute gap is not constant, and the shape and dimensions of the semiconductor package,
There is a disadvantage that the weight is not uniform. Such an inconvenience has been remarkable in a chip size package (hereinafter referred to as a CSP). That is, CS
Since P can reduce the package size to the same size as the semiconductor element, the ratio of the volume and weight occupied by the sealing resin to the total volume and capacity of the package is large. When the shape and weight of the sealing resin fluctuate due to the instability of the shape of the sealing resin overflowing from the minute gap in the CSP having such characteristics, the influence greatly affects the shape dimensions and weight of the entire semiconductor package. .

As a resin molding method used for a general semiconductor package, there is a transfer molding method. This molding method is used in a mounting structure such as a QFP in which a semiconductor element is mounted on a lead frame by a wire bonding method. The outline of the transfer molding method is as follows. That is, a thermosetting resin such as epoxy having a property of being solid at room temperature is melted at a high temperature, kneaded with an inorganic filler, pulverized again, and powder-molded to produce granules. In this method, the produced granules are heated to a high temperature to be in a liquid state, injected into a mold, and further heated to be cured.

However, in this transfer molding, a high temperature and a high pressure are required to dissolve the granules to a low viscosity, which may break the connection bumps and the conductive adhesive. It was difficult to fill the sealing resin in the thin minute gap. For this reason, the transfer molding method has not been used as a flip chip sealing method.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and the present invention is directed to injecting air into a small gap between a semiconductor element mounted face-down and a substrate in a short time so that air bubbles do not enter. It is another object of the present invention to provide a method of manufacturing a semiconductor package which can be cured in a short time.

[0015]

SUMMARY OF THE INVENTION The present invention provides at least two
A method for manufacturing an electronic component, comprising: a plurality of components; surface-attaching these components; and filling a small gap formed between opposing surfaces of the surface-attached components with a sealing resin. Positioning the housed components in a mold for filling the sealing resin, depressurizing the inside of the mold, injecting the liquid resin into the depressurized mold, and curing the injected liquid resin. And a step of causing it to be performed.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention comprises at least two components, and these components are surfaced and formed between opposing surfaces of the surfaced components. A method for manufacturing an electronic component in which a sealing resin is filled in a minute gap, wherein a step of positioning and accommodating a surface-attached component in a mold for filling a sealing resin and a step of depressurizing the inside of the mold And a step of injecting the liquid resin into the depressurized mold, and a step of curing the injected liquid resin, thereby having the following effects. That is, since the sealing resin is injected into the mold in a reduced pressure state, the injection can be reliably performed in a short time. Therefore, even if the viscosity increases due to the inclusion of the inorganic filler in the sealing resin, the sealing resin can be reliably injected. This increases the degree of freedom in selecting an inorganic filler to be contained in the sealing resin. Since the inorganic filler is added to the sealing resin for the purpose of adjusting the thermal expansion coefficient and the thermal conductivity, the degree of freedom in selecting the inorganic filler is increased, so that the electron having a good thermal expansion coefficient and a good thermal conductivity can be obtained. Parts can be created.

According to a second aspect of the present invention, there is provided a method of manufacturing an electronic component according to the first aspect, wherein one of the constituent elements is a substrate and the other is provided on a surface facing the substrate. An element mounted on the substrate via the provided electrode part, wherein the minute gap is formed between the substrate and the element by interposing the electrode part. This has the following effects. That is, the minute gap formed in the electronic component of the present invention is very small, and it is not easy to reliably fill such a minute gap with the sealing resin. When the present invention is applied to an electronic component having such features, the sealing resin can be reliably injected in a short time without generating bubbles in the minute gap.

According to a third aspect of the present invention, there is provided a method of manufacturing an electronic component according to the second aspect, wherein the substrate and the element are positioned and housed in the mold. Are housed in the mold in a state where they are pressed against each other, thereby having the following operation. In other words, the mechanical and thermal shocks applied during the process of injecting and curing the resin into the minute gaps may break the connection between the substrate and the element, but the substrate and the element are pressed against each other. Since it is housed in the mold in the above state, the mechanical bonding strength of the connection between the substrate and the element is increased. Therefore, even when the mechanical shock or the thermal shock occurs, a connection failure between the substrate and the element does not occur.

According to a fourth aspect of the present invention, there is provided a method of manufacturing an electronic component according to the second aspect, wherein any one of the substrate or the element positioned and accommodated in the mold is provided.
It is characterized in that the inspection terminal is pulled out of the mold and the sealing resin is injected and hardened while performing an electrical inspection through the pulled-out inspection terminal, thereby having the following effects. . That is, in each filling step of the sealing resin, each step can be performed while confirming the connection between the element and the substrate. Therefore, a connection failure in each process can be found each time, which can contribute to an improvement in yield. Further, even after the sealing and curing, the electronic component can be removed as a defective product when the electronic component is taken out of the mold, so that there is no need to perform unnecessary processing on the defective product in a post-process.

According to a fifth aspect of the present invention, after a semiconductor element is mounted face down on a substrate, a sealing resin is filled in a minute gap formed between opposing surfaces between the semiconductor element and the substrate. A method of positioning and housing a face-down mounted semiconductor element and a substrate in a mold for filling sealing resin in a state where they are pressed against each other, and depressurizing the inside of the mold. The method is characterized by including a step, a step of injecting the sealing resin into the depressurized mold, and a step of curing the injected sealing resin, and thereby has the following operation. That is, in an electronic component in which a semiconductor element is mounted face-down on a substrate, a minute gap between the substrate and the semiconductor element becomes very small, and a machine added during a process of injecting a resin into the minute gap and curing the resin. There is a possibility that a connection failure may occur at a connection portion between the substrate and the semiconductor element due to a thermal shock or a thermal shock. However, if the present invention is implemented in an electronic component having such characteristics, Actions similar to the described actions will be obtained as more prominent ones.

According to a sixth aspect of the present invention, there is provided a method of manufacturing an electronic component, comprising the steps of:
It is characterized in that an inspection terminal is drawn out of the mold from the substrate positioned and housed in the mold, and an injection test of the sealing resin is performed while performing an electrical inspection of the semiconductor element through the pulled-out inspection terminal. This has the following effects. That is, in the present invention, the same operation as the above-described claim 4 can be obtained, but the connection between the semiconductor element and the substrate is extremely fine, and the connection between the semiconductor element and the substrate is not affected by mechanical shock or thermal shock during the resin filling step. There is a characteristic that a connection failure at a connection portion between the substrate and the semiconductor element is extremely likely to occur. Therefore, if the present invention is applied to an electronic component having such characteristics, the effect of the present invention that a connection failure in each process can be found each time and the yield can be improved can be more remarkable. .

According to a seventh aspect of the present invention, there is provided a method of manufacturing an electronic component according to the fifth aspect, wherein the semiconductor element comprises a gold bump formed on a connection electrode. The semiconductor device is characterized in that it is mounted on a substrate via a conductive adhesive, and the semiconductor element is mounted on the substrate by melting solder bumps formed on connection electrodes. It has the characteristic that it is.
By having such a configuration, claims 7 and 8 of the present invention are provided.
Has the following effects. That is, in the electronic component having the connection structure between the semiconductor element and the substrate as set forth in claims 7 and 8, the connection between the semiconductor element and the substrate is caused by a mechanical shock or a thermal shock during the resin filling step. There is a feature that defects are particularly likely to occur. Therefore, if the present invention is applied to an electronic component having such characteristics, the effect of the present invention that a connection failure in each process can be found each time and the yield can be improved can be further remarkable. .

According to a ninth aspect of the present invention, a sealing resin is filled in a minute gap formed between a facing surface between a semiconductor element mounted face down on a substrate and the substrate. A mold for positioning and housing a semiconductor element and a substrate mounted face-down in a state where they are pressed against each other, a decompression means for depressurizing the inside of the die, and sealing in the depressurized mold. It is characterized by having means for injecting a resin and means for heating and curing the injected sealing resin, thereby having the following effects. That is, by using the electronic component manufacturing apparatus of the present invention, the above-described electronic component manufacturing method of claim 5 can be easily implemented.

According to a tenth aspect of the present invention, there is provided the electronic component manufacturing apparatus according to the ninth aspect, wherein the mold is configured such that an inspection terminal is formed from the substrate positioned and housed inside the mold. It is characterized in that it has a terminal drawing means for drawing out to the maximum, thereby having the following operation. That is, by using the electronic component manufacturing apparatus of the present invention, the above-described electronic component manufacturing method according to claim 6 can be easily implemented.

According to an eleventh aspect of the present invention, after a semiconductor element is mounted face down on a substrate, a sealing resin is filled in a minute gap formed between opposing surfaces between the semiconductor element and the substrate. An electronic component comprising: a substrate extending end formed on the substrate along the periphery of the semiconductor element; a chip component mounted on the substrate extending end; It is characterized by being sealed with a resin. That is, since chip components can be mounted on the extending end of the substrate, mounting efficiency is improved accordingly.

[0026]

Embodiments of the present invention will be described below.

Embodiment 1 FIGS. 1A to 1E are cross-sectional views showing steps of manufacturing an electronic component according to Embodiment 1 of the present invention. In this embodiment, the present invention is implemented in a CSP (chip size package) which is an example of a semiconductor package.

First, as shown in FIG.
1 and a semiconductor element 103 are prepared. The substrate 101 has a structure in which an aramid fiber is mainly composed of an epoxy resin and is dispersed in the epoxy resin.
a, 102b, and these wiring layers 102a, 1
02b are electrically connected to each other by inner vias (not shown) provided inside the substrate. In addition, glass fiber may be used instead of aramid fiber.
The size of the substrate 101 is 12 mm × 12 mm × 0.4 mm
And has a flatness of about 30 microns in an area of 12 mm × 12 mm.

The semiconductor element 103 is mounted face-down on the substrate 101 thus configured. The mounting method is, for example, as follows. That is, the semiconductor element 103
A gold bump 104 is formed on the electrode (not shown), and a conductive adhesive (not shown) is applied on the gold bump 104. Then, the gold bump 104 of the electrode and the wiring layer 102a on the substrate 101 are joined with a conductive adhesive. The conductive adhesive is preferably made of silver powder and a thermosetting resin, and has a curing temperature of 120 ° C. In the semiconductor element 103, the electrode portion and the gold bump 104 constitute the electrode portion described in claim 2.

The (vertical × horizontal) size of the semiconductor element 103 is the (vertical × horizontal) size of the substrate 101 (12 mm × 12 mm).
mm). Therefore, the peripheral end of the substrate 101 on which the semiconductor element 103 is mounted protrudes from the peripheral end of the semiconductor element 103 to form an extended end 101a. Although not shown, a chip component such as a chip resistor is mounted on the extension end 101a in advance.

The gold bump 104 provided on the electrode is obtained by bonding a gold wire to the surface of the semiconductor element 103 by a wire bonding method and tearing the gold wire, and further pressing down the semiconductor element 103 to make the height of the bump constant. Is appropriate. In addition, as the bump, the electrode 10
The solder wire may be formed in a ball shape by bonding the solder wire on the surface 4 and melting the surface tension by heat treatment.

In the substrate 101 on which the semiconductor element 103 is mounted as described above, the upper surface 101b of the substrate
A small gap α corresponding to the thickness of the electrode (including the gold bump 104) is formed between the third mounting surface 103a and the third mounting surface 103a.

Then, as shown in FIG. 1B, the substrate 101 on which the semiconductor element 103 is mounted is placed in the recess 105a of the lower mold 105. The size (length x width x depth) of the storage recess 105a is set as follows. That is, the size of (vertical × horizontal) is formed to be the same size as the semiconductor element 103 so that the substrate 101 can be accommodated without displacement. Further, in a state where the substrate 101 on which the semiconductor element 102 is mounted is housed, the depth dimension of the housing recess 105a is set such that the upper surface 105b of the lower mold 105 is flush with the upper surface 101b of the substrate 101.
The dimension is set to be equal to the dimension from the bottom of the wiring layer 102b to the upper surface 101b of the substrate 101.

After the substrate 101 and the semiconductor element 102 are positioned and accommodated in the lower die 105, the upper die 106 is placed on the lower die 105 as shown in FIG. The upper mold 106 has a nozzle 107 for resin injection.
And the decompression pump 108 are connected to each other. Further, the shape of the storage recess 106a of the upper mold 106 is set as follows. That is, of the size (length × width × depth) of the storage recess 106a, the size of (length × width) is
The size is set to be slightly smaller than the (vertical × horizontal) size of the storage recess 105 a and larger than the (vertical × horizontal) size of the semiconductor element 103. Further, the depth dimension of the storage recess 106a is set to be slightly smaller than the height dimension (dimension from the upper surface of the semiconductor element to the bottom of the electrode (including the bump)) of the semiconductor element 103.

When the upper mold 106 thus configured is fitted into the lower mold 105 (containing the substrate 101 and the semiconductor element 103), the following is obtained. That is, first, the bottom of the housing recess 106 a contacts the upper surface of the semiconductor element 103. At this time, a space β for substantially storing the extension end 101a is formed between the side surface of the semiconductor element 103 and the peripheral wall of the storage recess 106a. At this time, the shoulder of the storage recess 106 a does not abut on the substrate 101.

In this state, the upper mold 106 is moved to the lower mold 105.
Move further to fit in. Then
The bottom of the storage recess 106 a presses the upper surface of the semiconductor element 103. This pressing is performed until the shoulder of the storage recess 106a contacts the peripheral edge of the substrate 101. Then,
The substrate 101 is fixed in upper and lower molds 105 and 106,
Substrate 101 made of a thin plate having a relatively large warp
Even with this, sealing with resin becomes possible. Further, the space β and the minute gap α are formed by the upper mold 106 and the substrate 10.
1, the upper and lower molds 105 and 106
It is possible to prevent the sealing resin from flowing out of the device. Further, the mechanical bonding strength between the electrode 104 and the wiring layer 102a becomes high due to the pressing of the upper mold 106, and the substrate 101 is also subjected to a mechanical shock or a thermal shock applied in a subsequent resin sealing step. No connection failure occurs at the connection between the semiconductor device 103 and the semiconductor device 103.

In this state, the pressure is reduced by a vacuum pump 108 as shown in FIG.
105 is heated to a predetermined temperature (100 ° C. to 150 ° C.) by a heating means (for example, a panel heater) 112, and then, as shown in FIG. The sealing resin 109 is injected at a predetermined low injection pressure (0.3 MPa), and the minute gap α and the space β are filled with the sealing resin 109. The sealing resin 109 injected into the mold is cured by the heating temperature of the mold. In the case of this mold, it takes only about 5 minutes from injection to curing. At this time, the sealing resin 10 is
9 is injected, the sealing resin 109 is surely injected to the depth of the minute gap α without applying an excessively large injection pressure, and does not generate air bubbles inside the minute gap α.

Room temperature (0 ° C. to 3 ° C.)
Epoxy resin which is a liquid thermosetting resin at about 5 ° C.)
A phenol resin and a cyanate resin can be used, and a carbon colorant (to improve heat dissipation), fused silica (to reduce the coefficient of thermal expansion), a vegetable wax (to improve mold release), and the like are blended with the resin. Note that the use of a thermosetting resin that becomes liquid at room temperature as the sealing resin 109 is liquid at room temperature, easy to handle, and easily injected into a mold.
This is because there is an advantage.

Although the viscosity of the sealing resin 109 rises to a certain extent, since the sealing resin 109, which is a liquid resin, is injected under reduced pressure, if the mold is heated to about 100 ° C. to 150 ° C., It is possible to reliably inject and cure the fine gap α. Therefore, in the present embodiment, it is not necessary to perform injection at a high temperature and high pressure as in transfer molding, and it is not more than about 1 MPa, specifically, 0.3 MPa.
It is possible to reliably inject into the minute gap α with such a low pressure.

If a resin, an inorganic filler, a curing agent, and the like are mixed immediately before the sealing resin 109 is injected into the mold, storage stability of the sealing resin 109 and an increase in viscosity during the process are suppressed as much as possible. be able to.

The sealing resin 109 can be formed, for example, by mixing the following materials.

Injectable resin body (main component) made of flame-retardant epoxy resin such as novolak type, bisphenol A type, alicyclic type, etc .: 14 to 18 wt% Curing agent made of acid anhydride, phenol novolak, amines, etc .: 8 Curing accelerator consisting of a latent accelerator, imidazole, etc .: 0.3 to 0.6 wt%. It consists of fused silica, crystalline silica, etc. and controls curing shrinkage, coefficient of thermal expansion, thermal conductivity, and mechanical performance. Filler: 68-76 wt% Release agent composed of higher fatty acid, wax, etc .: 0.4 w
About t%-Modifier made of special flexibilizer, silicone resin, etc. to reduce stress (low elastic modulus): About 2 wt%-Colorant such as carbon: about 0.1 wt% In some cases, a coupling agent or a flame retardant is added.

When the thermal expansion is required to be small, a large amount of fused silica is added to the inorganic filler, and when the thermal expansion is required to be large, a large amount of crystalline silica is added. When high heat conduction is required,
Aluminum nitride and silicon nitride are often added.

As an example of such a sealing resin 109,
For example, Nagase Ciba (main agent: XNR8200FR,
Curing agent: XNH8200-1, viscosity: 50 Pa · s, specific gravity: 1.8). In the case of using this resin, if the resin heating temperature is 140 ° C., the injection pressure is 0.3 MPa, and the vacuum decompression time is 20 seconds, the curing of the resin is completed by heating for 5 minutes.

In this manufacturing method, since the sealing resin 109 is injected after the inside of the mold is depressurized, even if the sealing resin 109 has a somewhat high viscosity, it is ensured to reach every corner of the minute gap α. Can be injected. In addition, even if the sealing resin 109 has a relatively high viscosity to some extent, it can be reliably injected. Therefore, even if the sealing resin 109 contains a large amount of an inorganic filler and the viscosity increases, the injection is performed. be able to. Since the inorganic filler is added to the sealing resin 109 for the purpose of adjusting the coefficient of thermal expansion and thermal conductivity, the content of the inorganic filler in the sealing resin 109 can be sufficiently tolerated, so that in this manufacturing method, A semiconductor package having good thermal expansion coefficient and thermal conductivity can be manufactured. In addition, since the sealing resin 109 is injected in a state where the semiconductor element 103 and the substrate 101 are pressed by the mold, the connection between the wiring layer 102a and the electrode 104 may cause poor connection even by the injection of the resin. A good connection state can be maintained without causing the connection.

The semiconductor package thus manufactured was left at 150 ° C. for 2 hours after demolding to relax internal stress, and then subjected to package inspection and reliability evaluation. Here, a solder reflow test and a temperature cycle test were performed. The solder reflow test was performed at a maximum temperature of 260 ° C and 1
It carried out by passing 10 times using a belt type reflow tester of 0 second. In the temperature cycle test, the high temperature side was 12
The test was carried out by repeating a temperature cycle in which the temperature was maintained at 5 ° C. and the low temperature side at −60 ° C. for 30 minutes for each 200 cycles.
In addition, a sample held at 85 ° C. and 85% high temperature and high humidity for 120 hours was subjected to a moisture absorption reflow test for performing a thermal shock test in the above reflow test. At this time, no crack was generated in the semiconductor package in terms of shape, and no particular abnormality was recognized in the ultrasonic flaw detector. Also, the flip chip connection portion was stable with no change in resistance. This indicates that the semiconductor package manufactured by this method has strong adhesion with the sealing resin.

FIG. 1E shows the semiconductor package 111 thus manufactured. In the semiconductor package 111, the minute gap α is filled with the sealing resin 109, and the semiconductor element 1 which has become the space β in the mold.
03 is filled with the sealing resin 109 to form an annular resin layer 110. Since the annular resin layer 110 is provided to cover the extending end 101a of the substrate 101, even when a chip component (not shown) is mounted on the extending end 101a, the annular resin layer 110 is covered and protected by the annular resin layer 110. You. As described above, the semiconductor package 111 not only has a stable vertical shape in appearance but also has good reliability because the side surface of the semiconductor element 103 is protected by the annular resin layer 110. Furthermore, after mounting the chip component on the extension end 101a provided on the substrate 101, the chip component can be covered with the annular resin layer 110, so that the mounting efficiency of the component can be improved. In addition, the upper surface of the semiconductor element 103 is exposed, and the semiconductor element can be radiated from the upper surface.
3 does not hinder the heat radiation.

According to the manufacturing method of this embodiment, a semiconductor package can be manufactured at a significantly higher process speed than the conventional method by using a multi-cavity mold capable of simultaneously sealing 20 pieces. Further, even a substrate having a large warp can be fixed flat, and the flip-chip mounting of the semiconductor element can be stably performed.

Embodiment 2 FIG. 2 is a sectional view of a mold used in the present embodiment. In this embodiment, a semiconductor package is manufactured basically in the same manner as in the first embodiment. In the drawings, the same or similar parts are denoted by the same reference numerals as those in FIG. The description of is omitted.

The manufacturing of the semiconductor package of the present embodiment is different from that of the first embodiment in the following points. That is, the lower mold 201 is provided with the inspection terminal 202. The inspection terminal 202 is connected to the lower mold 2 from the bottom of the storage recess 201a.
01 outside. Inspection terminal 20
2 is provided for each electrode 103a of the semiconductor element 103 that needs to be inspected. Specifically, among the wiring layers 102b on the lower surface of the substrate 101, the inspection terminal 202 is provided for each wiring layer 102b connected to the electrode 103a that needs to be inspected. Each inspection terminal 202 is configured as follows. That is, the terminal end 202a of the test terminal 202 located on the bottom side of the storage recess 201a is exposed in the storage recess 201a, and the test terminal 202b located outside the lower mold 201 is connected to the lower mold 201. It protrudes outside. Each inspection terminal 202 is connected to the lower mold 201.
The inspection terminal 20 is provided by interposing an insulator 203 between
Electrical insulation between the two is maintained. The end of the insulator 203 exposed on the inner surface of the storage recess 201 is connected to each wiring layer 1 in a state where the substrate 101 is stored in the storage recess 201.
02b to receive the entire back surface. Therefore, when the substrate 101 is stored in the storage recess 201, each wiring layer 102b is received by the insulator 203, and electrical insulation between the wiring layers 102b is maintained. In the present embodiment, the upper and lower molds 106 and 201 to be pressed and arranged, the insulator 203, and the inspection terminal 203
Thus, the terminal lead-out means in claim 10 is constituted.

Hereinafter, a semiconductor package using the upper and lower molds 106 and 201 (here, CSP as an example).
Will be described.

The substrate 101 on which the semiconductor element 103 is mounted face-down is positioned and accommodated in upper and lower molds 201 and 106, and in this state, the inside of the mold is subjected to a decompression pump 108
While the pressure is reduced by using the sealing resin 109 through the nozzle 107.
Injecting and curing is the same as in the first embodiment, and a description thereof will be omitted.

This embodiment is characterized in that the semiconductor element 103 and the substrate 101 are formed while the sealing resin 109 is injected and cured.
And electrical testing. That is, as shown in FIG. 2, a state in which the substrate 101 on which the semiconductor element 103 is mounted face down is held by the upper and lower dies 106 and 201 is shown. At this time, the substrate 10 is
1 is pressed and fixed to the bottom surface of the storage recess 201a of the lower mold 201. Therefore, each wiring layer 102b is firmly connected to the inspection terminal 202. In this state, by connecting the resistance measuring device 204 to the terminal end 202b of the inspection terminal 202, the flip-chip connection state of the semiconductor element 103 can be inspected, and a defective product can be detected based on this inspection. . Specifically, the inspection is performed as follows. That is, the electrode 104 and the wiring layer 1 in a state where the sealing resin 109 is not injected but only after mounting.
02a is approximately 4 per bump.
0 mΩ. This connection resistance does not change during pressure reduction,
When the sealing resin 109 is injected and cured, there is a case where the resistance rises to about 50 mΩ, but even in such a case, connection failure such as disconnection does not occur. However, if the connection resistance exceeds 100 mΩ at the time of injection curing of the sealing resin 109, there are places where connection failure occurs. This is presumably because when the amount of the conductive adhesive applied was small, the sealing resin 109 flowed into the gap between the conductive adhesive and the wiring layer 102b, and the electrical connection between the two was hindered. In addition, although a rise in connection resistance (100 mΩ or more) leading to poor connection does not occur, one that causes abnormal resistance behavior when the sealing resin is injected is:
In the subsequent reliability evaluation (moisture absorption reflow test in which a sample held in high temperature and high humidity of 85 ° C. and 85% humidity for 120 hours is subjected to a thermal shock test in the above reflow test), deterioration of connection resistance may occur. It could be confirmed. From this,
By observing the abnormal resistance behavior when the sealing resin is injected, the reliability of the package can be predicted at the manufacturing stage.

In each of the above-described embodiments, the present invention is implemented in a semiconductor package such as a CSP. However, the present invention is not limited to such electronic components, and the present invention is not limited to such electronic components. The present invention can be applied to an electronic component such as a mounted one or another hybrid integrated circuit. The point is that the electronic component is composed of at least two components, and is a component in which these components are surfaced and a sealing resin is filled in a minute gap formed between the facing surfaces of the surfaced components. The present invention can be implemented.

[0055]

According to the present invention, claims 1, 2, 5, 7, 8, 1
According to 0, since the sealing resin is injected into the mold in a reduced pressure state, it can be reliably injected in a short time.
A highly reliable electronic component can be manufactured. Also,
Even if the viscosity increases due to the inclusion of an inorganic filler in the sealing resin for the purpose of adjusting the thermal expansion coefficient and thermal conductivity, the sealing resin can be reliably injected. An electronic component having good thermal conductivity can be manufactured with high accuracy.

According to the third aspect of the present invention, even when a mechanical shock or a thermal shock occurs, a connection failure between the substrate and the element does not occur. Thus, a highly accurate electronic component can be manufactured. In addition, even a substrate having a large warp can be flattened and fixed to a mold, so that the sealing resin can be more reliably filled, and accordingly, a more accurate electronic component can be manufactured. it can.

According to the fourth, sixth and tenth aspects of the present invention, a connection failure in each process can be found each time, which can contribute to an improvement in yield. In addition, since the electronic component can be removed as a defective product when the electronic component is removed from the mold even after sealing and hardening, unnecessary processing in the post-process for the defective product is not required, which further contributes to an improvement in yield. it can.

According to the eleventh aspect of the present invention, since the chip component can be mounted on the extending end of the substrate, the mounting efficiency is improved and the electronic component can be reduced in size.

[Brief description of the drawings]

FIG. 1 is a sectional view showing each step of a method for manufacturing a semiconductor package according to a first embodiment of the present invention;

FIG. 2 is a sectional view showing a structure of a mold used in a method of manufacturing a semiconductor package according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a conventional method of sealing a semiconductor package.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 101 Substrate 101a Extension end 102a Wiring layer (substrate upper surface) 102b Wiring layer (substrate lower surface) 103 Semiconductor element 104 Electrode (semiconductor element) 105 Lower mold 106 Upper mold 107 Nozzle 108 Decompression pump 109 Sealing resin 110 Ring resin layer 111 semiconductor package 201 lower mold 202 inspection terminal α minute gap β space

Claims (11)

[Claims] An electronic component comprising at least two components, wherein said components are surfaced, and a sealing resin is filled in a minute gap formed between opposing surfaces of the surfaced components. A manufacturing method, comprising the steps of: positioning and accommodating a surface-attached component in a sealing resin filling mold; depressurizing the inside of the mold; and injecting sealing resin into the depressurized mold. And a step of curing the injected sealing resin. 2. The method for manufacturing an electronic component according to claim 1, wherein one of the constituent elements is a substrate, and the other is connected to the substrate via an electrode portion provided on the substrate facing surface. A method for manufacturing an electronic component, wherein the element is a mounted element, and the minute gap is formed between the substrate and the element by interposing the electrode portion. 3. The method of manufacturing an electronic component according to claim 2, wherein when positioning and housing the substrate and the element in the mold, the substrate and the element are pressed into contact with the mold. A method for manufacturing an electronic component, comprising storing the electronic component. 4. The method for manufacturing an electronic component according to claim 2, wherein an inspection terminal is drawn out of the mold from one of the substrate and the element positioned and stored in the mold, and the inspection terminal is drawn out. A method for manufacturing an electronic component, comprising: performing resin injection and curing while performing an electrical test via a terminal. 5. A method for manufacturing an electronic component, comprising: mounting a semiconductor element face down on a substrate; and filling a minute gap formed between opposing surfaces between the semiconductor element and the substrate with a sealing resin. A step of positioning and housing the face-down mounted semiconductor element and the substrate in a mold for sealing resin filling in a state of being pressed against each other, a step of depressurizing the inside of the mold, and sealing in the depressurized mold. A method for manufacturing an electronic component, comprising: a step of injecting a resin; and a step of curing the injected sealing resin. 6. The method for manufacturing an electronic component according to claim 5, wherein an inspection terminal is drawn out of the mold from the substrate positioned and housed in the mold, and the semiconductor element is passed through the pulled-out inspection terminal. A method for manufacturing an electronic component, comprising: performing injection hardening of a sealing resin while performing an electrical inspection. 7. The method for manufacturing an electronic component according to claim 5, wherein the semiconductor element is formed on a substrate via a conductive adhesive after forming a gold bump on a connection electrode. An electronic component manufacturing method characterized by the above-mentioned. 8. The method of manufacturing an electronic component according to claim 5, wherein the semiconductor element is mounted on a substrate by melting a solder bump formed on a connection electrode. Method. 9. An electronic component manufacturing apparatus used for filling a sealing resin into a minute gap formed between an opposing surface between a semiconductor element face-down mounted on a substrate and the substrate, A mold for positioning and housing the face-down mounted semiconductor element and the substrate in pressure contact with each other, a decompression means for depressurizing the inside of the mold, a means for injecting a sealing resin into the depressurized mold, A device for heating and curing the anti-static resin. 10. The apparatus for manufacturing an electronic component according to claim 9, wherein the mold has terminal extracting means for extracting an inspection terminal from the substrate positioned and stored inside the mold to the outside of the mold. Electronic component manufacturing equipment. 11. An electronic component in which a semiconductor element is mounted face down on a substrate and a sealing resin is filled in a minute gap formed between opposing surfaces between the semiconductor element and the substrate. An electronic component comprising: a substrate extending end formed along the periphery of the semiconductor element; a chip component mounted on the substrate extending end; and the chip component sealed with the sealing resin.