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JPH11307490A - Rotary cleaning method for wafer and its device - Google Patents

Rotary cleaning method for wafer and its device

Info

Publication number
JPH11307490A
JPH11307490A JP11320698A JP11320698A JPH11307490A JP H11307490 A JPH11307490 A JP H11307490A JP 11320698 A JP11320698 A JP 11320698A JP 11320698 A JP11320698 A JP 11320698A JP H11307490 A JPH11307490 A JP H11307490A
Authority
JP
Japan
Prior art keywords
wafer
rotating
cleaning
pure water
basket
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11320698A
Other languages
Japanese (ja)
Inventor
Kuniyoshi Suzuki
邦由 鈴木
Toshiaki Otaka
敏昭 大高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP11320698A priority Critical patent/JPH11307490A/en
Publication of JPH11307490A publication Critical patent/JPH11307490A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain cleaning efficiency equal to or more than that in a mechanical rotation which rotates by a conventional drive roller in rotary cleaning of a wafer in which the wafer is dipped in a solution of pure water or a detergent, and cleaning is performed efficiently by rotating the wafer. SOLUTION: In a state that a wafer basket 3 is dipped in a solution bath, as rotating means for rotating a wafer W in a circumferential direction, solution flow or bubbles flow jetting means is provided at a position confronted to an opening of the basket 3, and a fluid jetting direction of this jetting means is directed to a direction along a peripheral face or a margin of the wafer on one side near to a center position of the wafer W in the basket 3, and the wafer W is rotated in a circumferential direction by this solution flow, etc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は純水や洗浄液、若し
くはその他薬液の液体中にウエーハを浸潰し、該ウエー
ハを回転させることにより効率良く洗浄を行なうウエー
ハの回転洗浄方法とその装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for rotating and cleaning a wafer, in which a wafer is immersed in pure water, a cleaning solution, or a liquid of a chemical solution, and the wafer is rotated to efficiently clean the wafer.

【0002】[0002]

【従来の技術】半導体デバイスの製造ではウエーハ表面
汚染物がデバイス特性を劣化させ、不良の大きな原因と
なる。従って製品の高歩留り、且つ信頼性高く製造する
ためには、ウエーハ製造プロセスの各工程において汚染
物を除去する必要があり、各種洗浄、例えばエッチング
後の洗浄、ウエーハ製造プロセスの最終洗浄、RCA洗
浄、リンス洗浄(純水洗浄)等の各種ウエット洗浄工程
が存在する。
2. Description of the Related Art In the manufacture of semiconductor devices, wafer surface contaminants degrade device characteristics and are a major cause of defects. Therefore, in order to manufacture products with high yield and high reliability, it is necessary to remove contaminants in each step of the wafer manufacturing process. Various cleanings, for example, cleaning after etching, final cleaning in the wafer manufacturing process, RCA cleaning And various wet cleaning processes such as rinsing cleaning (pure water cleaning).

【0003】かかるウエーハ洗浄技術は、従来のブラッ
シングやスクラバ等がウエーハ表面を接触させるブラシ
接触式洗浄方法に代り、バスケットにいれたウエーハを
純水中に浸漬した後、洗浄効率を良くする為、必要に応
じてバブリングしながらウエーハを回転させて洗浄を行
なっている。かかる洗浄方式においては、ウエーハを回
転するために、機械的な回転方式を採用している。
[0003] Such a wafer cleaning technique replaces the conventional brush contact type cleaning method in which a brushing or a scrubber contacts the wafer surface. In order to improve the cleaning efficiency after immersing the wafer in a basket in pure water, Cleaning is performed by rotating the wafer while bubbling as necessary. In such a cleaning method, a mechanical rotation method is used to rotate the wafer.

【0004】図3にウエーハを機械的に回転させる従来
技術のウエーハ洗浄装置の構成を示す。図中11はリン
ス槽、12はリンス槽底部に並置した純水吹出し部(ノ
ズル)で、該純水吹出し部(ノズル)12より吹出した
純水がウエーハW周面を接触する。13は多数枚のウエ
ーハWを図上前後方向にほぼ垂直面内に沿って列設させ
るウエーハバスケットで、後記実施例に示すようにバス
ケット内周面に多数のウエーハ支持用のV溝を鋸歯状に
刻設している。
FIG. 3 shows a configuration of a conventional wafer cleaning apparatus for mechanically rotating a wafer. In the figure, reference numeral 11 denotes a rinsing tank, and 12 denotes a pure water blowing part (nozzle) juxtaposed at the bottom of the rinsing tank. Pure water blown from the pure water blowing part (nozzle) 12 contacts the peripheral surface of the wafer W. Reference numeral 13 denotes a wafer basket for arranging a large number of wafers W along a substantially vertical plane in the front-rear direction in the figure. It is engraved.

【0005】14は前記バスケット13の脚部を両側載
置する一対の揺動テ−ブルで、前記純水吹出し部12の
上方にバスケット13が位置するように配置すると共
に、前記揺動テ−ブル14を介して前記バスケット13
を揺動可能に構成する。17はバスケット下方開口を介
してウエーハ周縁下端に接触する駆動ローラで、リンス
槽11外部に設けた不図示の伝導系を介してリンス槽1
1下面に設けた回転駆動装置18により回転可能に構成
する。
Reference numeral 14 denotes a pair of swinging tables on which the legs of the basket 13 are placed on both sides. The swinging tables 14 are arranged so that the basket 13 is located above the pure water blowing section 12 and the swinging tables. The basket 13 through the bull 14
Is configured to be swingable. Reference numeral 17 denotes a drive roller which comes into contact with the lower end of the peripheral edge of the wafer through the basket lower opening, and the rinsing tank 1 is connected to a rinsing tank 1 via a conductive system (not shown) provided outside the rinsing tank 11.
1 is configured to be rotatable by a rotation drive device 18 provided on the lower surface.

【0006】かかる従来技術によれば、前記駆動ローラ
17の回転によりこれと接触するウエーハWが従動回転
(図中16)すると共に、ノズル12より純水を上方に
向けて噴出させてウエーハWの効率的洗浄を行なう。
尚、本従来技術においては前記駆動ローラ17がウエー
ハWの重力方向の荷重を受けてウエーハWの下端周縁に
接触している構造、言換えれば駆動ローラ17がウエー
ハWの荷重を受ける構造となっているために、ノズル1
2より純水をウエーハW周面に噴出させてもウエーハW
が回転することはない。而もノズル12よりの純水の噴
出は、駆動ローラ17の左右両側でほぼ均等に噴出して
いるために、ウエーハWの回転エネルギーには何等作用
していない。
According to this conventional technique, the rotation of the drive roller 17 causes the wafer W in contact therewith to be driven to rotate (16 in the figure), and at the same time, causes the nozzle 12 to eject pure water upward to eject the wafer W. Perform efficient cleaning.
In the prior art, the driving roller 17 receives a load in the gravitational direction of the wafer W and is in contact with the lower peripheral edge of the wafer W. In other words, the driving roller 17 receives the load of the wafer W. Nozzle 1
Even if pure water is spouted onto the peripheral surface of wafer W from wafer 2, wafer W
Does not rotate. Since the jet of pure water from the nozzle 12 is almost uniformly jetted on both the left and right sides of the drive roller 17, it has no effect on the rotational energy of the wafer W.

【0007】[0007]

【発明が解決しようとする課題】しかしながら前記した
機械的回転方式では駆動ローラや回転駆動装置を必要と
するために装置サイズが必然的に大きくなるのみなら
ず、設備費用のアップにつながる。又機械的回転方式で
は駆動ローラ17をウエーハW周縁に接触させてウエー
ハWに従動回転力を付与するものであるために、駆動ロ
ーラ17とウエーハW周縁との摺擦によりパーティクル
が発生しやすい。
However, in the above-described mechanical rotation method, a drive roller and a rotation drive device are required, so that not only the size of the device is inevitably increased, but also the equipment cost is increased. Further, in the mechanical rotation method, since the driving roller 17 is brought into contact with the peripheral edge of the wafer W to apply a driven rotational force to the wafer W, particles are easily generated due to the friction between the driving roller 17 and the peripheral edge of the wafer W.

【0008】本発明はかかる技術的課題に鑑み、装置サ
イズが大きくなることなく、又設備費用のアップにつな
がることのないウエーハの回転洗浄方法とその装置を提
供することを目的とする。更に本発明の他の目的は、パ
ーティクルが発生することなく効率的にウエーハの洗浄
が行なえるウエーハの回転洗浄方法とその装置を提供す
ることにある。
SUMMARY OF THE INVENTION In view of the above technical problems, an object of the present invention is to provide a method for rotating a wafer and a device for rotating the wafer without increasing the size of the apparatus and without increasing the equipment cost. It is still another object of the present invention to provide a method and an apparatus for rotating a wafer that can be efficiently cleaned without generating particles.

【0009】[0009]

【課題を解決するための手段】請求項1記載の発明は、
ウエーハを周方向に回転可能に収納支持するため適宜位
置に開口を具えたウエーハ収納部(ウエーハバスケッ
ト)にウエーハを収納し、薬液又は純水が満たされた液
槽内に浸漬けされた状態で、前記ウエーハを周方向に回
転させながら該ウエーハの洗浄を行なうウエーハの回転
洗浄方法において、液流若しくは気泡流若しくはこれら
により生成された伴流を主としてウエーハの中心位置よ
り片側のウエーハ周面若しくは周縁に接触させながら、
該接触された前記液流等により前記ウエーハを周方向に
回転させることを特徴とする。
According to the first aspect of the present invention,
The wafer is stored in a wafer storage unit (wafer basket) having an opening at an appropriate position to store and support the wafer rotatably in the circumferential direction, and is immersed in a liquid tank filled with a chemical solution or pure water. In a method of rotating a wafer for cleaning the wafer while rotating the wafer in a circumferential direction, a liquid flow, a bubble flow, or a wake generated by the flow is mainly used for a wafer peripheral surface or a peripheral edge on one side from a center position of the wafer. While contacting
The wafer is rotated in the circumferential direction by the contacted liquid flow or the like.

【0010】請求項2記載の発明は、前記発明を好適に
実施するための装置に関する発明で、ウエーハを周方向
に回転可能に収納支持するため適宜位置に開口を具えた
ウエーハ収納部(ウエーハバスケット、バスケットとも
いう)を設け、薬液又は純水が満たされた液槽と、前記
液槽内にウエーハ収納部を浸漬けされた状態で、前記ウ
エーハを周方向に回転させる回転手段とを具え、前記回
転手段によりウエーハを回転させながら、該ウエーハの
洗浄を行なうウエーハの回転洗浄装置において、前記ウ
エーハ収納部開口と対面する位置に液流若しくは気泡流
噴出手段(以下噴出ノズルという)を設け、該噴出手段
の流体噴出方向を、主として前記バスケットの開口を通
してウエーハ収納部内に収納されたウエーハの中心位置
より片側のウエーハ周面若しくは周縁に沿う一定方向に
向けたことを特徴とするものである。
A second aspect of the present invention relates to an apparatus for suitably implementing the above-mentioned invention, and includes a wafer storage portion (wafer basket) having an opening at an appropriate position for storing and supporting a wafer rotatably in a circumferential direction. , Also referred to as a basket), comprising a liquid tank filled with a chemical solution or pure water, and rotating means for rotating the wafer in the circumferential direction in a state where the wafer storage portion is immersed in the liquid tank, In a wafer rotary cleaning apparatus for cleaning the wafer while rotating the wafer by the rotating means, a liquid flow or bubble flow blowing means (hereinafter referred to as a blowing nozzle) is provided at a position facing the wafer storage section opening, The fluid ejection direction of the ejection means is set such that the wafer is located on one side of the center position of the wafer stored in the wafer storage portion mainly through the opening of the basket. It is characterized in that for the constant direction along the circumferential surface or perimeter.

【0011】かかる発明によれば、液流若しくは気泡流
によりウエーハを回転するものであるために、且つ前記
した従来の噴出ノズルの噴出方向を変えるだけで本発明
が達成できるために、従来の機械的回転方式のように駆
動ローラや回転駆動装置を必要とすることがない。従っ
て、本発明によれば従来装置に比較して装置サイズが小
さく且つ設備費用の低減につながる。又本発明は液流若
しくは気泡流のみがウエーハに接触し、噴出ノズルはウ
エーハやバスケットには全く接触しないために、これら
の摺擦によりパーティクル等が発生する余地がなく洗浄
効率が向上する。
According to this invention, since the wafer is rotated by a liquid flow or a bubble flow, and the present invention can be achieved only by changing the ejection direction of the above-mentioned conventional ejection nozzle, the conventional machine is used. There is no need for a drive roller or a rotation drive device unlike the conventional rotation method. Therefore, according to the present invention, the size of the apparatus is smaller than that of the conventional apparatus, and the equipment cost is reduced. Further, in the present invention, since only the liquid flow or the bubble flow comes into contact with the wafer, and the ejection nozzle does not come into contact with the wafer or the basket at all, there is no room for particles or the like to be generated by the rubbing thereof, and the cleaning efficiency is improved.

【0012】尚、前記液流は、薬液槽の場合は薬液、リ
ンス槽の場合は純水を用いる。又噴出ノズルにより気泡
流を噴射させて気泡流により周回する液流によりウエー
ハを回転させるようにしてもよい。前記薬液としては、
アンモニア、過酸化水素、フッ酸、塩酸、水等を組み合
わせた一般的な洗浄液を用いる。又、液流若しくは気泡
流の噴出速度は、これらの流体流速がウエーハに接触す
る際に、ウエーハがバスケットの支持溝との抵抗に抗し
て回転し得る程度の速度エネルギーが必要であり、その
ウエーハ回転速度も表面汚れの発生率が低減し得る程度
の回転エネルギーを付与するのがよい。又前記噴出速度
の上限は、気泡若しくは液の使用料のコスト的な面と、
ウエーハが飛び出すなどのトラブルのない程度で抑える
ことが好ましい。
As the liquid flow, a chemical liquid is used in the case of a chemical tank, and pure water is used in the case of a rinse tank. Further, the wafer may be rotated by a liquid flow that is circulated by the bubble flow by injecting the bubble flow by the ejection nozzle. As the chemical,
A general cleaning solution combining ammonia, hydrogen peroxide, hydrofluoric acid, hydrochloric acid, water and the like is used. In addition, the jet velocity of the liquid flow or the bubble flow requires velocity energy such that the wafer can rotate against the resistance of the basket with the support groove when the fluid flow velocity contacts the wafer. It is preferable that the rotation speed of the wafer is given such a rotation energy that the generation rate of surface contamination can be reduced. In addition, the upper limit of the ejection speed is, in terms of the cost of using air bubbles or liquid,
It is preferable to suppress the occurrence of a trouble such as a wafer jumping out.

【0013】[0013]

【発明の実施の形態】以下、本発明を図に示した実施例
を用いて詳細に説明する。但し、この実施例に記載され
る構成部品の寸法、形状、その相対配置などは特に特定
的な記載がない限り、この発明の範囲をそれのみに限定
する趣旨ではなく単なる説明例に過ぎない。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to an embodiment shown in the drawings. However, unless otherwise specified, dimensions, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the invention, but are merely illustrative examples.

【0014】図4は本発明に使用されるウエーハバスケ
ット3で、図4(A)のA−A線断面図である(C)に
示すように、下部が略台形状に狭幅化された左右側壁3
1,32を有し、該側壁31,32の相対持する内周側
の、上段、中段及び下段に、(A)の平面図に示すよう
にV溝状のウエーハ支持溝33a〜33cを鋸状に多数
刻設し、該支持溝33a〜33cに多数のウエーハWが
垂直に位置保持された状態で図上前後に平行に列設され
る。尚(B)は正面図である。この結果前記ウエーハW
はほぼ垂直な面内で前記支持溝33a〜33cにほぼ点
接触状態で支持されているために、垂直面内でウエーハ
W周方向に回転エネルギーを付与することにより容易に
回転させることが出来る。
FIG. 4 shows a wafer basket 3 used in the present invention. As shown in FIG. 4A, which is a cross-sectional view taken along the line AA of FIG. Left and right side walls 3
As shown in the plan view of FIG. 3A, V-shaped wafer support grooves 33a to 33c are sawn in the upper, middle, and lower stages on the inner peripheral side of the side walls 31, 32, which are held by the side walls 31, 32. A large number of wafers W are vertically arranged in parallel in the figure while a large number of wafers W are held vertically in the support grooves 33a to 33c. (B) is a front view. As a result, the wafer W
Is supported in substantially vertical contact with the support grooves 33a to 33c in a substantially vertical plane, so that the wafer W can be easily rotated by applying rotational energy in the circumferential direction in the vertical plane.

【0015】又、前記ウエーハバスケット3の上面34
と底面35が大きく開口し、上面34よりウエーハWの
収納/取り出し可能に構成され、又底面35側より後記
する純水噴出流が侵入可能に開口されている。又本バス
ケット3は左右側壁31,32にも、中段に設けた支持
溝33bを挟んでその上下両側に帯状の開口36を設
け、純水噴出流の侵入の容易化を図っている。
The upper surface 34 of the wafer basket 3
The bottom surface 35 has a large opening so that the wafer W can be stored / removed from the top surface 34, and the pure water jet flow described later is opened from the bottom surface 35 side. The basket 3 is also provided with band-shaped openings 36 on the upper and lower sides of the left and right side walls 31 and 32 with the support groove 33b provided at the middle level interposed therebetween, thereby facilitating intrusion of the jet of pure water.

【0016】図1及び図2に液流でウエーハWを回転さ
せる本発明の実施形態に係るウエーハ洗浄装置、特にエ
ッチング後のリンス槽の構成を示す。図中1はリンス槽
で、図2に示すように、長手方向に前記した複数のウエ
ーハバスケット3が浸漬け配置可能に構成されている。
4は前記バスケット3をリンス槽1内に中空配置する為
に、バスケット3の脚部を両側載置する一対の揺動テー
ブルで、該揺動テーブル4はその一側で垂直支持棒41
に固定され、該垂直支持棒41上端に設けた揺動棒42
を介して所定角度を揺動可能に構成する。
FIGS. 1 and 2 show the configuration of a wafer cleaning apparatus according to an embodiment of the present invention for rotating a wafer W by a liquid flow, particularly a rinse tank after etching. In the figure, reference numeral 1 denotes a rinsing tank, as shown in FIG. 2, in which the plurality of wafer baskets 3 described above can be immersed and arranged in the longitudinal direction.
Reference numeral 4 denotes a pair of swinging tables on which the legs of the basket 3 are placed on both sides in order to arrange the basket 3 in the rinsing tank 1 in a hollow state.
And a swing rod 42 provided at the upper end of the vertical support rod 41.
Is configured to be able to swing at a predetermined angle via.

【0017】そして前記揺動テーブル4とリンス槽1底
部間にはリンス槽1長手方向に延設する管状ノズルをリ
ンス槽短手方向に4本並置した純水吹出ノズル管2群が
配設されている。前記ノズル管2の配設位置は限定しな
いが、前記バスケット3の底側開口35と対面する位置
に配設され、そのノズル穴20(純水噴出方向)を、前
記底側開口35を通してウエーハバスケット3内に収納
されたウエーハWの中心位置より片側のほぼウエーハ周
縁の接線方向に沿う方向に向けている。
Between the swing table 4 and the bottom of the rinsing tank 1, there are provided two groups of pure water blowing nozzle pipes in which four tubular nozzles extending in the longitudinal direction of the rinsing tank 1 are juxtaposed in the transverse direction of the rinsing tank. ing. Although the disposition position of the nozzle tube 2 is not limited, the nozzle tube 2 is disposed at a position facing the bottom opening 35 of the basket 3, and the nozzle hole 20 (pure water jetting direction) is inserted through the bottom opening 35 into a wafer basket. The wafer W accommodated in 3 is oriented in a direction substantially tangential to the peripheral edge of the wafer W on one side from the center position of the wafer W stored in the wafer 3.

【0018】即ち、ウエーハWの中心位置より片側に位
置するテーブルの外(右)側に位置するノズル管2aは
垂直に純水が吹出すように設定し、又テーブルの内
(左)側に位置するノズル管2b〜2d群は図上右側に
傾斜させて純水が吹出すようにそのノズル穴20を設定
してある。そして前記ノズル管2よりの純水吹出し速度
と噴出量は、該純水噴出流をウエーハ周縁を接触して回
転エネルギーが付与し得る程度の速度と噴出量に設定す
る。
That is, the nozzle tube 2a located on the outside (right) side of the table located on one side from the center position of the wafer W is set so that pure water blows out vertically, and the nozzle tube 2a is located on the inside (left) side of the table. The nozzle pipes 2b to 2d located are inclined to the right side in the drawing and their nozzle holes 20 are set so that pure water is blown out. The speed and amount of pure water blown out from the nozzle tube 2 are set to such a speed and amount that the pure water jet can contact the peripheral edge of the wafer and impart rotational energy.

【0019】又前記ノズル穴20は、バスケット3に列
設したウエーハW間隔と同一若しくは3〜5倍間隔程度
に設定し、前記列設ウエーハW夫々に確実に噴流5が当
たるように設定するのがよいが、必ずしもそのようにし
なくても噴流5に伴って生じる伴流にも回転エネルギー
を有するために、前記ノズル穴20間隔をウエーハW列
設間隔の5〜10倍程度に設定しても問題ない。例えば
本装置ではウエーハWの列設間隔が2.5mm程度に対
し各ノズル穴20は、lmmφの大きさの穴を15mm
間隔で穿孔している。
The nozzle holes 20 are set to be equal to or approximately 3 to 5 times the interval of the wafers W arranged in the basket 3 so that the jets 5 can surely hit each of the arranged wafers W. It is preferable that the interval between the nozzle holes 20 is set to about 5 to 10 times the interval between the rows of the wafers W because the wake generated by the jet 5 also has rotational energy. no problem. For example, in the present apparatus, each nozzle hole 20 has a hole having a size of
Perforated at intervals.

【0020】次にかかる実施形態の作用を説明する。先
ず前記したように、ウエーハWが(複数枚)入るバスケ
ット3を複数個セットできるリンス槽1の底部の揺動テ
ーブル4下部に前記四本のノズル管2を配置した洗浄装
置を用意する。かかるリンス槽1の揺動テーブル4にア
ルカリエッチング後の8インチウエーハWを収納したバ
スケット3をセットする。尚、この装置では純水を外部
より供給7し、前記ノズル穴20より純水を常時噴出可
能に構成している。この時ノズル穴20の純水噴出方向
はウエーハWが回転(図中6)するような位置、例えば
前記したウエーハWの片側周縁に純水が集中するように
調整されている。純水の噴出速度は0.01cm/se
cに設定している。
Next, the operation of the embodiment will be described. First, as described above, a washing apparatus is prepared in which the four nozzle pipes 2 are arranged below the swing table 4 at the bottom of the rinsing tank 1 in which a plurality of baskets 3 into which a plurality of wafers W can be placed are set. A basket 3 containing an 8-inch wafer W after alkali etching is set on the swing table 4 of the rinsing tank 1. In this apparatus, pure water is supplied 7 from the outside, and pure water can always be ejected from the nozzle hole 20. At this time, the direction in which the pure water is ejected from the nozzle hole 20 is adjusted so that the pure water is concentrated at a position where the wafer W rotates (6 in the drawing), for example, at one edge of the wafer W described above. The jet velocity of pure water is 0.01cm / sec
c is set.

【0021】このリンス槽1に8インチウエーハW40
枚をセットしたバスケット3を2個揺動テーブル4上に
固定し、前記回転を阻害しない程度の揺動角度で揺動さ
せながらウエーハWの回転を行なって洗浄を行なう。こ
の時ノズル管2から供給された純水はウエーハWに回転
エネルギーを付与させながらその表面を摺擦させた後、
リンス槽1よりオーバーフローさせながら洗浄を行な
う。
The rinsing tank 1 has an 8-inch wafer W40
The two baskets 3 on which the sheets are set are fixed on the swing table 4, and the wafer W is rotated while being swung at a swing angle that does not hinder the rotation, thereby performing cleaning. At this time, the pure water supplied from the nozzle tube 2 rubs the surface of the wafer W while applying rotational energy to the wafer W.
Cleaning is performed while overflowing from the rinsing tank 1.

【0022】かかる洗浄工程で洗浄時間は3分間で実施
した所、外観汚れ不良が図3に示す従来例に比べ1%低
減された。またパーティクルの増加も見られなかった。
尚、前記装置を用いて純水の噴出速度を0.005cm
/secにした所、ウエーハWが回転しないものもあ
り、安定した回転が得られなかったことから外観汚れ不
良が低減しなかった。従って前記純水の噴射速度は本実
施形態の場合は0.01cm/sec 以上の噴射によ
りウエーハWが安定して回転する事が確認されたが、こ
れはノズル管の数、口径、穴の穿孔間隔、バスケット
数、ウエーハ枚数、ウエーハ口径、バスケットの種類等
により任意に変化する。
In this cleaning step, when the cleaning time was 3 minutes, the appearance stain defect was reduced by 1% as compared with the conventional example shown in FIG. No increase in particles was observed.
In addition, the jetting speed of pure water was 0.005 cm
In the case of / sec, some wafers W did not rotate, and stable rotation was not obtained. Accordingly, in the case of the present embodiment, it was confirmed that the wafer W was rotated stably by the injection speed of the pure water of 0.01 cm / sec or more. It varies arbitrarily depending on the interval, the number of baskets, the number of wafers, the wafer diameter, the type of basket, and the like.

【0023】又本実施形態では常時純水を噴射している
がウエーハWをセット後に純水の噴射を開始してもよ
い。又バスケット3をセットするテーブルは必要である
が、必ずしも該テーブルを揺動させなくてもよい。純水
は外部から供給せずに循環方式を採用してもよいが、装
置の構造、清浄度の面から外部より供給したほうが実施
しやすい。また実施例ではエッチング後のリンス工程に
適用したが、その他の各種ウェット洗浄工程でも同様で
ある。尚、表面汚染物を除去する洗浄とは目的が異なる
が、薬液として酸やアルカリを用いた湿式のエッチング
工程でも同様な方法、装置が使用可能である。
In the present embodiment, pure water is always injected, but pure water injection may be started after the wafer W is set. Although a table for setting the basket 3 is necessary, the table does not always have to be swung. Pure water may be circulated without being supplied from the outside, but it is easier to supply pure water from the outside in view of the structure of the apparatus and cleanliness. In the embodiment, the rinsing step after the etching is applied, but the same applies to other various wet cleaning steps. Although the purpose is different from that of cleaning for removing surface contaminants, a similar method and apparatus can be used in a wet etching process using an acid or alkali as a chemical solution.

【0024】[0024]

【発明の効果】以上記載のごとく本発明によれば、従来
の駆動ローラにて回転を行なう機械回転と同等以上の洗
浄効率をえることが出来る。又従来技術と異なり、回転
機構設置による駆動部品取付けスペースが不要となる為
に装置のコンパクト化が達成されるとともに構造が簡略
化される為に、装置コストの低減が図れる。
As described above, according to the present invention, it is possible to obtain a cleaning efficiency equal to or higher than that of a mechanical rotation in which a conventional drive roller rotates. Also, unlike the prior art, the space for mounting the driving parts by installing the rotating mechanism is not required, so that the apparatus can be made compact and the structure can be simplified, so that the cost of the apparatus can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 純水噴出流でウエーハを回転させる本発明の
実施形態に係るウエーハ洗浄装置、特にエッチング後の
リンス槽の構成を示す正面図である。
FIG. 1 is a front view showing the configuration of a wafer cleaning apparatus according to an embodiment of the present invention for rotating a wafer by a jet of pure water, particularly a rinse tank after etching.

【図2】 図1の側面図である。FIG. 2 is a side view of FIG.

【図3】 機械的に駆動ローラでウエーハを回転させる
従来技術に係るウエーハ洗浄装置の構成を示す図1対応
図である。
FIG. 3 is a view corresponding to FIG. 1 showing a configuration of a wafer cleaning apparatus according to a conventional technique in which a wafer is mechanically rotated by a driving roller.

【図4】 本発明に使用されるウエーハバスケットで、
(A)は平面図、(B)は正面図、(C)は(A)のA
−A線断面図を示す。
FIG. 4 shows a wafer basket used in the present invention;
(A) is a plan view, (B) is a front view, (C) is A of (A).
FIG.

【符号の説明】[Explanation of symbols]

1,11 リンス槽 2,12 ノズル 3,13 ウエーハバスケット 4,14 テーブル 5,15 純水の流れ 6,16 ウエーハの回転 17 駆動ローラ(ウエーハ接触部) 18 駆動装置 W ウエーハ Reference Signs List 1,11 Rinse tank 2,12 Nozzle 3,13 Wafer basket 4,14 Table 5,15 Pure water flow 6,16 Wafer rotation 17 Drive roller (wafer contact part) 18 Drive device W Wafer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ウエーハを周方向に回転可能に収納支持
するため適宜位置に開口を具えたウエーハ収納部にウエ
ーハを収納し、薬液又は純水が満たされた液槽内に浸漬
けされた状態で、前記ウエーハを周方向に回転させなが
ら該ウエーハの洗浄を行なうウエーハの回転洗浄方法に
おいて、 液流若しくは気泡流若しくはこれらにより生成された伴
流を主としてウエーハの中心位置より片側のウエーハ周
面若しくは周縁に接触させながら、該接触された前記液
流等により前記ウエーハを周方向に回転させることを特
徴とするウエーハの回転洗浄方法。
1. A state in which a wafer is stored in a wafer storage portion having an opening at an appropriate position for storing and supporting the wafer rotatably in a circumferential direction, and is immersed in a liquid tank filled with a chemical solution or pure water. In a method of rotating a wafer for cleaning the wafer while rotating the wafer in the circumferential direction, the liquid flow or the bubble flow or the wake generated by the wafer flow is mainly used for the wafer peripheral surface on one side from the center position of the wafer or A method of rotating and cleaning a wafer, wherein the wafer is rotated in the circumferential direction by the contacted liquid flow or the like while being in contact with a peripheral edge.
【請求項2】 ウエーハを周方向に回転可能に収納支持
するため適宜位置に開口を具えたウエーハ収納部と、 薬液又は純水が満たされた液槽と、 前記液槽内にウエーハ収納部を浸漬けされた状態で、前
記ウエーハを周方向に回転させる回転手段とを具え、 前記回転手段によりウエーハを回転させながら、該ウエ
ーハの洗浄を行なうウエーハの回転洗浄装置において、 前記ウエーハ収納部開口と対面する位置に、液流若しく
は気泡流噴出手段を設け、 該噴出手段の流体噴出方向を、主として前記開口を通し
てウエーハ収納部内に収納されたウエーハの中心位置よ
り片側のウエーハ周面若しくは周縁に沿う方向に向けた
ことを特徴とするウエーハの回転洗浄装置。
2. A wafer storage part having an opening at an appropriate position for storing and supporting a wafer rotatably in a circumferential direction, a liquid tank filled with a chemical solution or pure water, and a wafer storage part in the liquid tank. A rotating means for rotating the wafer in a circumferential direction in a state of being immersed, in a wafer rotary cleaning apparatus for cleaning the wafer while rotating the wafer by the rotating means, A liquid flow or bubble flow ejection means is provided at a position facing the wafer, and the fluid ejection direction of the ejection means is set to a direction along a wafer peripheral surface or a peripheral edge on one side from a center position of the wafer stored in the wafer storage portion mainly through the opening. A rotary cleaning device for wafers, characterized in that
JP11320698A 1998-04-23 1998-04-23 Rotary cleaning method for wafer and its device Pending JPH11307490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11320698A JPH11307490A (en) 1998-04-23 1998-04-23 Rotary cleaning method for wafer and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11320698A JPH11307490A (en) 1998-04-23 1998-04-23 Rotary cleaning method for wafer and its device

Publications (1)

Publication Number Publication Date
JPH11307490A true JPH11307490A (en) 1999-11-05

Family

ID=14606254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11320698A Pending JPH11307490A (en) 1998-04-23 1998-04-23 Rotary cleaning method for wafer and its device

Country Status (1)

Country Link
JP (1) JPH11307490A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100644054B1 (en) 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 Cleaning device and pre-cleaning method of gate oxide film
JP2022038422A (en) * 2020-08-26 2022-03-10 キオクシア株式会社 Manufacturing method of substrate processing equipment and semiconductor equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100644054B1 (en) 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 Cleaning device and pre-cleaning method of gate oxide film
JP2022038422A (en) * 2020-08-26 2022-03-10 キオクシア株式会社 Manufacturing method of substrate processing equipment and semiconductor equipment

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