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JPH11251105A - Thick-film resistance paste and its manufacture - Google Patents

Thick-film resistance paste and its manufacture

Info

Publication number
JPH11251105A
JPH11251105A JP10052150A JP5215098A JPH11251105A JP H11251105 A JPH11251105 A JP H11251105A JP 10052150 A JP10052150 A JP 10052150A JP 5215098 A JP5215098 A JP 5215098A JP H11251105 A JPH11251105 A JP H11251105A
Authority
JP
Japan
Prior art keywords
raw material
powder
organic vehicle
material powder
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10052150A
Other languages
Japanese (ja)
Other versions
JP4006814B2 (en
Inventor
Masashi Fukaya
昌志 深谷
Tomoko Matsuo
知子 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal SMI Electronics Device Inc
Original Assignee
Sumitomo Metal SMI Electronics Device Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal SMI Electronics Device Inc filed Critical Sumitomo Metal SMI Electronics Device Inc
Priority to JP05215098A priority Critical patent/JP4006814B2/en
Publication of JPH11251105A publication Critical patent/JPH11251105A/en
Application granted granted Critical
Publication of JP4006814B2 publication Critical patent/JP4006814B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Conductive Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a thick-film resistance paste, having high EDS characteristic (high withstand voltage pulse characteristic) and which does not contain such harmful substance as Pd, Cd, Ni, etc., for obtaining a ceramic circuit board having superior performance. SOLUTION: A film resistance paste is prepared by adding an organic vehicle, a solvent, and a dispersant to a mixture prepared by mixing raw material powder composed of glass powder and conductive material powder with the organic vehicle. The mixture is prepared for satisfying the relation, 5.5A<=B<= 10.0A (where A represents the mean specific surface area (Am<2> /g) of the raw material powder, when the minor-axis diameter of the powder is less than or equal to 5μm and the volumetric ratio (%) of the vehicle to the raw material powder is B). At the manufacturing of the paste, the raw material powder is dispersed in the organic vehicle by forcibly passing the raw material mixture through a clearances of less than or equal to 5μm in width.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、外部抵抗体を有す
るセラミック回路基板用の厚膜抵抗ペーストおよびその
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film resistor paste for a ceramic circuit board having an external resistor and a method of manufacturing the same.

【0002】[0002]

【従来の技術】集積回路に使用されるセラミック回路基
板において、多層回路基板の層間に設けられる内蔵抵抗
体の他に、セラミック基板の表面に導体パターンや外部
抵抗体などからなる回路を形成し、セラミック回路基板
の高機能化、低コスト化に貢献している。
2. Description of the Related Art In a ceramic circuit board used for an integrated circuit, in addition to a built-in resistor provided between layers of a multilayer circuit board, a circuit comprising a conductor pattern and an external resistor is formed on the surface of the ceramic board. It contributes to higher performance and lower cost of ceramic circuit boards.

【0003】セラミック基板表面に厚膜抵抗体を形成す
る場合、ガラス粉末に導電物質を加え有機ビヒクルでペ
ースト状にしたものを基板表面に印刷し、焼結して抵抗
体とする。このとき、抵抗体の保護や耐候性の向上を目
的として、抵抗体をガラス系材料で覆うように印刷し、
焼成することによってオーバーコートすることも行われ
ている。
When a thick-film resistor is formed on the surface of a ceramic substrate, a paste obtained by adding a conductive substance to glass powder and using an organic vehicle is printed on the substrate surface and sintered to form a resistor. At this time, for the purpose of protecting the resistor and improving the weather resistance, printing is performed so that the resistor is covered with a glass-based material,
Overcoating is also performed by firing.

【0004】厚膜抵抗体の重要な特性の一つに耐高電圧
パルス特性(ESD特性)がある。通常10kΩ/□以
上の抵抗でEDS特性が悪くなる。その理由は以下の通
りである。厚膜抵抗体の導電性はガラス中に形成される
導電物質と導電物質間のガラスの薄い膜で成立している
が、厚膜抵抗体に高電圧が印加されると微細な導電経路
は破壊され抵抗値が変化する。高抵抗になる程、導電物
質の配合量が減少し、ガラスの薄い膜による導通が支配
的になるため、上記の現象は起きやすくなる。かかる現
象の解決のために、従来は以下のような対策が講じられ
ていた。
One of the important characteristics of a thick-film resistor is a high-voltage pulse resistance (ESD characteristic). Normally, EDS characteristics deteriorate with a resistance of 10 kΩ / □ or more. The reason is as follows. The conductivity of a thick-film resistor consists of a conductive material formed in the glass and a thin film of glass between the conductive materials, but when a high voltage is applied to the thick-film resistor, the fine conductive paths are broken. And the resistance value changes. As the resistance becomes higher, the amount of the conductive material decreases, and conduction by a thin glass film becomes more dominant. Conventionally, the following measures have been taken to solve such a phenomenon.

【0005】(1)抵抗率の大きいBi2Ru27、P
2Ru26の粉末を使用し、導電物質の配合を多くす
る。ただし分解防止のためガラスはPbを含むものを使
用する。 (2)Pb含有の低融点ガラスを用い、焼成中に導電粒
子間に薄い膜を形成させる。
(1) Bi 2 Ru 2 O 7 , P having a large resistivity
Use b 2 Ru 2 O 6 powder and increase the amount of conductive material. However, glass containing Pb is used to prevent decomposition. (2) Using Pb-containing low-melting glass, a thin film is formed between conductive particles during firing.

【0006】(3)ガラス粉末、導電粒子を非常に細か
いものを使用し、導電経路を多くする。(特開平8−2
50829号公報参照) しかし、(1),(2)は原材料中に有害物質であるP
bを含むので好ましくなく、(3)は分散方法が難しか
った。
(3) Use extremely fine glass powder and conductive particles to increase the number of conductive paths. (JP-A-8-2
However, (1) and (2) show that P is a harmful substance in raw materials.
b) is not preferred, and (3) was difficult to disperse.

【0007】[0007]

【発明が解決しようとする課題】そこで本発明は、ES
D特性が良く、しかもPb,Cd,Niなどの有害物質
を含まない厚膜抵抗ペーストを提供し、優れた性能のセ
ラミック回路基板を得ることを目的とする。
SUMMARY OF THE INVENTION Accordingly, the present invention provides an ES
An object of the present invention is to provide a thick film resistor paste having good D characteristics and not containing harmful substances such as Pb, Cd, and Ni, and obtaining a ceramic circuit board having excellent performance.

【0008】[0008]

【課題を解決するための手段】本発明は、ガラス粉末と
導電物質の粉末からなる原料粉末を有機ビヒクルで混合
してなる混合物にさらに有機ビヒクル、溶剤及び分散剤
を添加させてなる厚膜抵抗ペーストにおいて、該原料粉
末の短軸粒径が5μm以下で平均比表面積をAm2
g、該有機ビヒクルの該原料粉末に対する体積割合をB
%としたとき、5.5A≦B≦10.0Aの関係を有す
る混合物を用いたことを特徴とする厚膜抵抗ペーストで
ある。
According to the present invention, there is provided a thick film resistor obtained by adding an organic vehicle, a solvent and a dispersing agent to a mixture obtained by mixing a raw material powder composed of a glass powder and a conductive substance powder with an organic vehicle. In the paste, the raw material powder has a minor axis particle size of 5 μm or less and an average specific surface area of Am 2 /
g, the volume ratio of the organic vehicle to the raw material powder is B
%, Wherein a mixture having a relationship of 5.5 A ≦ B ≦ 10.0 A is used.

【0009】上記において、Bが5.5A未満ではビヒ
クル量が少なすぎてローラに粉体を付着させることが困
難であり、10.0Aを越えるとビヒクル量が多いた
め、ガラス粉末と導電物質の粉末の分散ができず、ED
S特性に対する効果があまり発揮されない。なお、有機
ビヒクルの粘度は10pa・s〜300pa・sが適当
で10pa・sより小さいと粘着力がなく、ローラーに
粉体を付着させることが困難となる。又、300Pa・
sを越えると、粉体をビヒクルで一様に濡らすことがで
きないため、揮発性の溶剤(例えばトルエン、エタノー
ル等)で希釈する必要が生じる。
In the above, if B is less than 5.5 A, the amount of the vehicle is too small to adhere the powder to the roller, and if it exceeds 10.0 A, the amount of the vehicle is large. Powder cannot be dispersed, ED
The effect on the S characteristic is not so much exhibited. The viscosity of the organic vehicle is suitably from 10 pa · s to 300 pa · s. If the viscosity is less than 10 pa · s, there is no adhesive force, and it becomes difficult to attach the powder to the roller. Also, 300Pa.
When s exceeds s, the powder cannot be uniformly wetted with the vehicle, so that it is necessary to dilute the powder with a volatile solvent (for example, toluene, ethanol or the like).

【0010】粉末材料のうち、ガラス粉末は、CaO−
Al23−SiO2−B23、Na2O−SiO2−B2
3、さらにはこれらの混合ガラスでPb,Cd,Niを
含まないものを用いる。導電物質としてはRuO2を用
いる。有機ビヒクルとしては、エチルセルロースとテル
ピネオール、ブチラール樹脂とテルピネオールなどが用
いられる。
[0010] Among powder materials, glass powder is CaO-
Al 2 O 3 —SiO 2 —B 2 O 3 , Na 2 O—SiO 2 —B 2 O
3. Further, a mixed glass containing no Pb, Cd, or Ni is used. RuO 2 is used as the conductive material. As the organic vehicle, ethyl cellulose and terpineol, butyral resin and terpineol, and the like are used.

【0011】本発明は又、粉末材料と有機ビヒクルから
なる混合物を5μm以下の隙間を強制的に通過させて、
原料粉末材料を有機ビヒクルに分散させる工程におい
て、原料粉末の平均比表面積をAm2/g、有機ビヒク
ルの体積割合をB%としたとき、5.5A≦B≦10.
0Aの関係を有する混合物となし、さらに有機ビヒク
ル、溶剤及び分散剤を添加し混練する工程からなること
を特徴とする厚膜抵抗ペーストの製造方法である。ま
ず、上記AとBの関係を有する混合物を5μm以下の隙
間を強制的に通過させることによって、ガラスと導電物
質の分散を均一にすることができる。
[0011] The present invention also provides a method comprising: forcing a mixture of a powder material and an organic vehicle through a gap of 5 μm or less;
In the step of dispersing the raw material powder material in the organic vehicle, when the average specific surface area of the raw material powder is Am 2 / g and the volume ratio of the organic vehicle is B%, 5.5A ≦ B ≦ 10.
A method for producing a thick-film resistance paste, comprising a step of adding and kneading a mixture having a relationship of 0 A with an organic vehicle, a solvent and a dispersant. First, the mixture having the relationship of A and B is forcibly passed through a gap of 5 μm or less, so that the glass and the conductive material can be uniformly dispersed.

【0012】5μm以下の隙間は例えば2本の平行ロー
ラを5μm間隔で配置することによって得られる。材料
をこの隙間に強制的に通過させることによって、径が5
μmを越える粉末を破砕あるいは押しつぶし、5μm以
下の大きさとする。この場合、粉末の長軸は5μmを越
えてもさしつかえないが、短軸の2倍以下が適当であ
る。隙間が5μmを越えると粉末に力が加わらないた
め、十分に分散することができない。隙間を通して分散
した材料は、印刷可能なペーストにするため、有機ビヒ
クルおよび溶剤を追加して混練し、適当な粘度として厚
膜抵抗ペーストとする。
A gap of 5 μm or less can be obtained, for example, by arranging two parallel rollers at an interval of 5 μm. By forcing the material through this gap, a diameter of 5
Crush or crush powder exceeding μm to a size of 5 μm or less. In this case, the major axis of the powder may exceed 5 μm, but it is appropriate that the major axis is twice or less the minor axis. If the gap exceeds 5 μm, no force is applied to the powder, so that the powder cannot be sufficiently dispersed. The material dispersed through the gap is kneaded by adding an organic vehicle and a solvent in order to form a paste that can be printed, so that a thick film resistance paste is obtained with an appropriate viscosity.

【0013】[0013]

【発明の実施の形態】以下、本発明の実施例並びに比較
例について説明する。ガラス粉末として下記の3種のも
のを用意した。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention and comparative examples will be described. The following three types of glass powder were prepared.

【0014】[0014]

【表1】 [Table 1]

【0015】又、ビヒクルとしては下記の2種のものを
用意した。 X…エチルセルロース、テルピオネール Y…ブチラール樹脂、テルピオネール+ブチルカルビト
ールアセテート 導電物質としてはRuO2を用いた。
The following two types of vehicles were prepared. X: Ethyl cellulose, Terpionell Y: Butyral resin, Terpionel + butyl carbitol acetate RuO 2 was used as the conductive substance.

【0016】これらの材料を表2に示す構成で混合物を
均一に作成した後、印刷可能なペーストとするために追
加の有機ビヒクル、溶剤及び分散剤(ホモゲノールL−
95{商品名:花王株式会社製})を追加して混練し、
厚膜抵抗ペーストを作成した。これを低温焼成セラミッ
クス基板上に抵抗電極部のパターン印刷、焼成した後、
セラミック基板上に厚膜抵抗体を形成した。得られた抵
抗体のシート抵抗(kΩ)、1.5kV、5パルスにお
けるESD、並びに係数を表2に併せて示す。
After these materials are uniformly mixed in the composition shown in Table 2, additional organic vehicles, solvents and dispersants (Homogenol L-
95 {Product name: Kao Corporation})
A thick film resistor paste was prepared. After printing and firing the pattern of the resistance electrode part on a low-temperature firing ceramic substrate,
A thick film resistor was formed on a ceramic substrate. Table 2 also shows the sheet resistance (kΩ), 1.5 kV, ESD at 5 pulses, and the coefficient of the obtained resistor.

【0017】[0017]

【表2】 [Table 2]

【0018】[0018]

【表3】 [Table 3]

【0019】上記表に示すとおり、本発明の実施例であ
るNo.1〜20はEDS特性が1.0%以下で優れたも
のであり、比較例21〜22は本発明における関係式の
規定を満足しないもので、EDSが1.0%を越えてお
り悪くなっている。又、比較例23も本発明における関
係式の規定を満足しておらず、ペースト作製が困難であ
る。
As shown in the above table, Examples 1 to 20 of the present invention have excellent EDS characteristics of 1.0% or less, and Comparative Examples 21 to 22 define the relational expressions in the present invention. Is not satisfied, and the EDS exceeds 1.0% and is poor. Also, Comparative Example 23 does not satisfy the relational expression in the present invention, and it is difficult to prepare a paste.

【0020】[0020]

【発明の効果】本発明によればESD特性の優れた厚膜
抵抗ペーストを提供することができ、優れた性能のセラ
ミック回路基板を得ることができる。このペーストは原
料粉末にPd,Cd,Ni等の有害物質を含むことなく
提供でき、製品の使用環境を良好に保つ上で効果があ
る。
According to the present invention, a thick film resistor paste having excellent ESD characteristics can be provided, and a ceramic circuit board having excellent performance can be obtained. This paste can be provided without containing harmful substances such as Pd, Cd, and Ni in the raw material powder, and is effective in maintaining a good use environment of the product.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 ガラス粉末と導電物質の粉末からなる原
料粉末を有機ビヒクルで混合してなる混合物にさらに有
機ビヒクル、溶剤及び分散剤を添加させてなる厚膜抵抗
ペーストにおいて、該原料粉末の短軸粒径が5μm以下
で平均比表面積をAm2/g、該有機ビヒクルの該原料
粉末に対する体積割合をB%としたとき、5.5A≦B
≦10.0Aの関係を有する混合物を用いたことを特徴
とする厚膜抵抗ペースト。
1. A thick-film resistance paste obtained by further adding an organic vehicle, a solvent and a dispersant to a mixture obtained by mixing a raw material powder composed of a glass powder and a conductive substance powder with an organic vehicle. When the axial particle size is 5 μm or less, the average specific surface area is Am 2 / g, and the volume ratio of the organic vehicle to the raw material powder is B%, 5.5 A ≦ B
A thick film resistor paste using a mixture having a relationship of ≦ 10.0 A.
【請求項2】 上記原料粉末材料がPb,Cd,Niを
含まないものである請求項1記載の厚膜抵抗ペースト。
2. The thick film resistor paste according to claim 1, wherein said raw material powder material does not contain Pb, Cd, and Ni.
【請求項3】 上記導電物質がRuO2である請求項1
記載の厚膜抵抗ペースト。
3. The method according to claim 1, wherein said conductive material is RuO 2.
The thick film resistor paste as described.
【請求項4】 粉末材料と有機ビヒクルからなる混合物
を5μm以下の隙間を強制的に通過させて、原料粉末材
料を有機ビヒクルに分散させる工程において、原料粉末
の平均比表面積をAm2/g、有機ビヒクルの体積割合
をB%としたとき、5.5A≦B≦10.0Aの関係を
有する混合物となし、さらに有機ビヒクル、溶剤及び分
散剤を添加し混練する工程からなることを特徴とする厚
膜抵抗ペーストの製造方法。
4. In the step of forcibly passing a mixture of a powder material and an organic vehicle through a gap of 5 μm or less to disperse the raw material powder in the organic vehicle, the average specific surface area of the raw material powder is Am 2 / g; When the volume ratio of the organic vehicle is B%, a mixture having a relationship of 5.5A ≦ B ≦ 10.0A is formed, and a process of adding and kneading an organic vehicle, a solvent, and a dispersant is further included. Manufacturing method of thick film resistor paste.
【請求項5】 上記原料粉末材料がPb,Cd,Niを
含まないものである請求項4記載の厚膜抵抗ペーストの
製造方法。
5. The method according to claim 4, wherein the raw material powder does not contain Pb, Cd, and Ni.
【請求項6】 上記導電物質がRuO2である請求項4
記載の厚膜抵抗ペーストの製造方法。
6. The method according to claim 4, wherein said conductive material is RuO 2.
A method for producing the thick film resistor paste according to the above.
JP05215098A 1998-03-04 1998-03-04 Thick film resistor paste and manufacturing method thereof Expired - Lifetime JP4006814B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05215098A JP4006814B2 (en) 1998-03-04 1998-03-04 Thick film resistor paste and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05215098A JP4006814B2 (en) 1998-03-04 1998-03-04 Thick film resistor paste and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH11251105A true JPH11251105A (en) 1999-09-17
JP4006814B2 JP4006814B2 (en) 2007-11-14

Family

ID=12906848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05215098A Expired - Lifetime JP4006814B2 (en) 1998-03-04 1998-03-04 Thick film resistor paste and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP4006814B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003073442A1 (en) * 2002-02-28 2003-09-04 Kojima Chemical Co., Ltd. Resistor
JP2003257702A (en) * 2002-02-28 2003-09-12 Kojima Kagaku Yakuhin Kk Fixed resistor
JP2003257703A (en) * 2002-02-28 2003-09-12 Kojima Kagaku Yakuhin Kk Resistor unit
US6873028B2 (en) * 2001-11-15 2005-03-29 Vishay Intertechnology, Inc. Surge current chip resistor
EP1693858A1 (en) 2005-02-21 2006-08-23 TDK Corporation Thick film resistor, manufacturing method thereof, glass composition for thick film resistor and thick film resistor paste
US7282163B2 (en) 2002-11-21 2007-10-16 Tdk Corporation Resistor paste, resistor, and electronic device
CN109448885A (en) * 2018-11-05 2019-03-08 浙江亮能机电科技有限公司 A kind of YH21CT stainless steel thick film circuit resistance slurry and preparation method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873028B2 (en) * 2001-11-15 2005-03-29 Vishay Intertechnology, Inc. Surge current chip resistor
WO2003073442A1 (en) * 2002-02-28 2003-09-04 Kojima Chemical Co., Ltd. Resistor
JP2003257702A (en) * 2002-02-28 2003-09-12 Kojima Kagaku Yakuhin Kk Fixed resistor
JP2003257703A (en) * 2002-02-28 2003-09-12 Kojima Kagaku Yakuhin Kk Resistor unit
CN100463078C (en) * 2002-02-28 2009-02-18 小岛化学药品株式会社 Resistor
US7282163B2 (en) 2002-11-21 2007-10-16 Tdk Corporation Resistor paste, resistor, and electronic device
EP1693858A1 (en) 2005-02-21 2006-08-23 TDK Corporation Thick film resistor, manufacturing method thereof, glass composition for thick film resistor and thick film resistor paste
CN109448885A (en) * 2018-11-05 2019-03-08 浙江亮能机电科技有限公司 A kind of YH21CT stainless steel thick film circuit resistance slurry and preparation method thereof

Also Published As

Publication number Publication date
JP4006814B2 (en) 2007-11-14

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