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JPH11255575A - Device for pulling single crystal and its cooling - Google Patents

Device for pulling single crystal and its cooling

Info

Publication number
JPH11255575A
JPH11255575A JP8035198A JP8035198A JPH11255575A JP H11255575 A JPH11255575 A JP H11255575A JP 8035198 A JP8035198 A JP 8035198A JP 8035198 A JP8035198 A JP 8035198A JP H11255575 A JPH11255575 A JP H11255575A
Authority
JP
Japan
Prior art keywords
single crystal
members
heat insulating
insulating material
pulling apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8035198A
Other languages
Japanese (ja)
Inventor
Kiyotaka Takano
清隆 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Priority to JP8035198A priority Critical patent/JPH11255575A/en
Publication of JPH11255575A publication Critical patent/JPH11255575A/en
Withdrawn legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a device for pulling a single crystal, capable of shortening a cooling time after the pulling of the single crystal to improve productivity. SOLUTION: This device for pulling a single crystal is obtained by disposing a cylindrical heat-insulating member comprising carbon fibers around a heater 2 for heating a quartz crucible 1 in a state brought into tight contact with the inside surface of the water-cooling chamber 4, and vertically dividing the heat-insulating member into three members 3a-3c. When it is finished to pull the single crystal 12, the charge of electricity to the heater 2 is stopped, and after the passage of some time so that the temperature of the cooling water in the cooling chamber 4 is rapidly not raised, the two upper heat-insulating members 3a and 3b are pulled with shafts 5a and 5b, respectively, top expose the inside surface of the water-cooling chamber 4. The inner wall surface of the water-cooling chamber 4 is thus brought into contact with the inner high temperature atmosphere to cool the water-cooling chamber 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、引上げCZ(Czoc
hralski )法によりSi(シリコン)の無転位の単結晶
を製造するための単結晶引上げ装置及びその単結晶引き
上げ後の冷却方法に関する。
TECHNICAL FIELD The present invention relates to a pulling CZ (Czoc).
The present invention relates to a single crystal pulling apparatus for producing a dislocation-free single crystal of Si (silicon) by the hralski method and a cooling method after the single crystal is pulled.

【0002】[0002]

【従来の技術】一般に、引上げCZ法による単結晶製造
装置では、高耐圧気密チャンバ内を10torr程度に減圧
して新鮮なAr(アルゴン)ガスを流すとともに、チャ
ンバ内の下方に設けられた石英ルツボ内の多結晶を加熱
して溶融し、この融液の表面に種結晶を上から浸漬し、
種結晶と石英ルツボを回転、上下移動させながら種結晶
を引き上げることにより、種結晶の下に上端が突出した
円錐形の上部コーン部と、円筒形のボディ部と下端が突
出した円錐形の下部コーン部より成る単結晶(いわゆる
インゴット)を成長させるように構成されている。
2. Description of the Related Art In general, in a single crystal manufacturing apparatus by the pulling CZ method, a high pressure-resistant airtight chamber is decompressed to about 10 torr and fresh Ar (argon) gas is flown, and a quartz crucible provided below the chamber is provided. The polycrystal in is melted by heating, and the seed crystal is immersed in the surface of this melt from above,
The seed crystal and the quartz crucible are rotated and moved up and down, and the seed crystal is pulled up to form a conical upper cone with the upper end protruding below the seed crystal, and a conical lower part with a cylindrical body and lower end protruding. It is configured to grow a single crystal (so-called ingot) composed of a cone portion.

【0003】図7は従来の単結晶引上げ装置を示し、石
英ルツボ1の回りには円筒状の抵抗加熱式ヒータ2が固
定され、ヒータ2の回りにはカーボン繊維により構成さ
れた円筒状の断熱材3が水冷チャンバ4の内壁面に密接
して配置されている。そして、単結晶12の引き上げを
終了すると石英ルツボ1を除くヒータ2、断熱材3など
は再利用される。このとき、単結晶12の引き上げを終
了した時点では、水冷チャンバ内部は高温であり、すぐ
に水冷チャンバ4を大気中に開放すると、水冷チャンバ
4内が酸化してヒータ2、断熱材3などが再利用不能に
なる。そこで、従来の冷却方法では、酸化が起きない5
00°C程度までアルゴンガスで自然に冷却されるのを
待つのが一般的である。
FIG. 7 shows a conventional single crystal pulling apparatus, in which a cylindrical resistance heating type heater 2 is fixed around a quartz crucible 1, and a cylindrical heat insulating member made of carbon fiber is provided around the heater 2. The material 3 is arranged in close contact with the inner wall surface of the water cooling chamber 4. When the pulling of the single crystal 12 is completed, the heater 2, the heat insulating material 3 and the like except for the quartz crucible 1 are reused. At this time, when the pulling of the single crystal 12 is completed, the inside of the water-cooling chamber is at a high temperature. It becomes unusable. Therefore, in the conventional cooling method, oxidation does not occur.
It is common to wait for the gas to cool naturally to about 00 ° C. with argon gas.

【0004】[0004]

【発明が解決しようとする課題】ところで、例えば径が
400mmのシリコン単結晶12を育成するための水冷
チャンバ4の径は36インチとなり、そのために原料の
量も小径のものより多くなるので断熱材3もその分大型
である。このような水冷チャンバ4の冷却時間は、中心
温度が千数百度から、酸化が起きない500°C程度ま
で自然に冷却されるまでに約12時間、さらに水冷チャ
ンバ4の開放後にも水冷チャンバ4の解体、内部部材1
〜3の取り外しまでに6〜7時間必要になる。したがっ
て、装置が大型化するほど冷却時間が長くなり、その分
次の単結晶12の製造を開始するまでの時間長くなるの
で、生産性が低下するという問題点がある。
By the way, the diameter of the water-cooling chamber 4 for growing a silicon single crystal 12 having a diameter of 400 mm is 36 inches, and the amount of the raw material is larger than that of the small diameter one. 3 is also large. The cooling time of the water-cooling chamber 4 is about 12 hours from the time when the center temperature is from several hundred degrees to about 500 ° C. at which oxidation does not occur. Dismantling, internal member 1
It takes 6-7 hours to remove ~ 3. Therefore, as the size of the apparatus increases, the cooling time becomes longer, and the time required to start the production of the next single crystal 12 becomes longer accordingly, which causes a problem that the productivity is reduced.

【0005】本発明は上記従来例の問題点に鑑み、単結
晶引き上げ後の冷却時間を短縮して生産性を向上させる
ことができる単結晶引上げ装置及びその冷却方法を提供
することを目的とする。
The present invention has been made in view of the above-described problems of the prior art, and has as its object to provide a single crystal pulling apparatus and a cooling method thereof capable of shortening a cooling time after pulling a single crystal and improving productivity. .

【0006】[0006]

【課題を解決するための手段】本発明は上記目的を達成
するために、断熱材を上下方向に分割して単結晶の引き
上げ終了後に水冷チャンバの内壁面が内部の高温の雰囲
気に露出するように断熱材の各部材間を離間させるよう
にしたものである。
SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the present invention provides a method in which a heat insulating material is divided in a vertical direction so that an inner wall surface of a water cooling chamber is exposed to a high temperature atmosphere after completion of pulling of a single crystal. The members of the heat insulating material are separated from each other.

【0007】すなわち本発明によれば、石英ルツボ内の
単結晶を加熱するヒータと、前記ヒータの回りを水冷チ
ャンバの内壁面に密接するように配置した断熱材とを有
する単結晶引上げ装置において、前記断熱材が上下方向
に複数に分割された部材により構成され、単結晶の引き
上げ終了後に前記水冷チャンバの内壁面の一部が内部の
雰囲気に露出されるように前記断熱材の1つ以上の部材
を上又は下方向に移動させて各部材間を離間可能に構成
したことを特徴とする単結晶引上げ装置が提供される。
That is, according to the present invention, there is provided a single crystal pulling apparatus having a heater for heating a single crystal in a quartz crucible, and a heat insulating material arranged around the heater so as to be in close contact with an inner wall surface of a water cooling chamber. The heat insulating material is constituted by a vertically divided plurality of members, and one or more of the heat insulating materials such that a part of the inner wall surface of the water cooling chamber is exposed to an internal atmosphere after completion of pulling of the single crystal. A single crystal pulling apparatus is provided, wherein the members are moved upward or downward so that the members can be separated from each other.

【0008】また本発明によれば、石英ルツボ内の単結
晶を加熱するヒータと、前記ヒータの回りを水冷チャン
バの内壁面に密接するように配置した断熱材とを有する
単結晶引上げ装置において、前記断熱材が円周方向に複
数に分割された部材により構成され、単結晶の引き上げ
終了後に前記水冷チャンバの内壁面の一部が内部の雰囲
気に露出するように前記断熱材の1つ以上の部材を前記
チャンバの円周に沿って移動させて各部材間を離間可能
に構成したことを特徴とする単結晶引上げ装置が提供さ
れる。
According to the present invention, there is provided a single crystal pulling apparatus having a heater for heating a single crystal in a quartz crucible, and a heat insulating material arranged around the heater so as to be in close contact with an inner wall surface of a water cooling chamber. The heat insulating material is constituted by a member divided into a plurality of pieces in a circumferential direction, and one or more of the heat insulating materials is so formed that a part of an inner wall surface of the water cooling chamber is exposed to an internal atmosphere after completion of pulling of a single crystal. A single crystal pulling apparatus is provided, wherein the members are moved along the circumference of the chamber so that the members can be separated from each other.

【0009】また本発明によれば、石英ルツボ内の単結
晶を加熱するヒータの回りにおいて水冷チャンバの内壁
面に密接するように配置され、上下方向及び/又は円周
方向に分割して配置された複数の断熱材部材の少なくと
も1つの部材を単結晶の引き上げ終了後に、前記水冷チ
ャンバの内壁面が内部の雰囲気に露出されるように上又
は下方向及び/又は円周方向に移動させて各部材間を離
間可能に構成した単結晶引上げ装置の冷却方法であっ
て、前記チャンバの内壁面の異なる部分が順次前記雰囲
気に露出されるよう、前記断熱材の各部材間の距離を変
更させるステップを有する単結晶引上げ装置の冷却方法
が提供される。
According to the present invention, the heater is arranged so as to be in close contact with the inner wall surface of the water-cooling chamber around the heater for heating the single crystal in the quartz crucible, and is divided vertically and / or circumferentially. After the pulling of the single crystal of at least one of the plurality of heat insulating members, the inner wall surface of the water cooling chamber is moved upward or downward and / or circumferentially so that the inner wall surface of the water cooling chamber is exposed to the internal atmosphere. A method for cooling a single crystal pulling apparatus configured to allow members to be separated from each other, wherein a distance between members of the heat insulating material is changed such that different portions of an inner wall surface of the chamber are sequentially exposed to the atmosphere. And a method for cooling a single crystal pulling apparatus having:

【0010】[0010]

【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図1は本発明に係る単結晶引上げ
装置の一実施形態を示す断面図、図2は図1の単結晶引
上げ装置の冷却状態を示す断面図、図3は図1の単結晶
引上げ装置及び従来例の冷却時間を示す説明図である。
Embodiments of the present invention will be described below with reference to the drawings. 1 is a cross-sectional view showing an embodiment of the single crystal pulling apparatus according to the present invention, FIG. 2 is a cross-sectional view showing a cooling state of the single crystal pulling apparatus of FIG. 1, and FIG. 3 is a single crystal pulling apparatus of FIG. It is explanatory drawing which shows the cooling time of an example.

【0011】図1(b)は単結晶引上げ装置の側面を示
し、図1(a)は図1(b)の線A−Aに沿った水平断
面図を示している。石英ルツボ1の回りには円筒状の抵
抗加熱式ヒータ2が固定され、ヒータ2の回りにはカー
ボン繊維により構成された円筒状の断熱材3が水冷チャ
ンバ4の内壁面に密接して配置されている。そして、断
熱材3は上下方向に3つの部材3a〜3cに分割され、
その内の最下方の断熱部材3cは固定されている。ま
た、上方の2つの断熱部材3a、3bはそれぞれ各一対
のシャフト5a、5bにより上下方向に移動可能に支持
され、シャフト5a、5bは水冷チャンバ4の上方から
外に露出している。シャフト5a、5bはカーボン製
で、一端が移動すべき断熱部材に接続され、他端が水冷
チャンバ4の外部に突出している。水冷チャンバ4の外
側面には、図示省略されているが、内部に冷却水が流れ
る冷却パイプがコイル状に巻回されている。
FIG. 1B shows a side view of the single crystal pulling apparatus, and FIG. 1A shows a horizontal cross-sectional view along the line AA in FIG. 1B. A cylindrical resistance heating type heater 2 is fixed around the quartz crucible 1, and a cylindrical heat insulating material 3 made of carbon fiber is arranged around the heater 2 in close contact with the inner wall surface of the water cooling chamber 4. ing. And the heat insulating material 3 is vertically divided into three members 3a to 3c,
The lowermost heat insulating member 3c is fixed. The upper two heat insulating members 3a, 3b are respectively supported by a pair of shafts 5a, 5b so as to be movable in the vertical direction, and the shafts 5a, 5b are exposed to the outside from above the water cooling chamber 4. The shafts 5a and 5b are made of carbon, and have one end connected to a heat insulating member to be moved and the other end protruding outside the water cooling chamber 4. Although not shown, a cooling pipe through which cooling water flows is wound around the outer surface of the water cooling chamber 4 in a coil shape.

【0012】また、水冷チャンバ4の上には上部チャン
バ10が連結され、上部チャンバ10から単結晶引き上
げ用のワイヤ11が吊り下げられる。そして、水冷チャ
ンバ4、上部チャンバ10内が低圧に維持されるととも
に石英ルツボ1の単結晶原料がヒータ2により加熱され
て溶融した状態で、ワイヤ11の先端に取り付けられた
種結晶をこの融液の表面に上から浸漬し、種結晶と石英
ルツボ1を回転、上下移動させながら種結晶を引き上げ
ることにより、種結晶の下に単結晶12を成長させる。
An upper chamber 10 is connected to the water cooling chamber 4, and a single crystal pulling wire 11 is suspended from the upper chamber 10. Then, the seed crystal attached to the tip of the wire 11 is melted in a state where the inside of the water cooling chamber 4 and the upper chamber 10 is maintained at a low pressure and the single crystal raw material of the quartz crucible 1 is heated and melted by the heater 2. The single crystal 12 is grown under the seed crystal by immersing the seed crystal from above and pulling up the seed crystal while rotating and moving the seed crystal and the quartz crucible 1 up and down.

【0013】この単結晶12の引き上げが終了すると、
ヒータ2に対する通電が停止され、水冷チャンバ4の冷
却水の温度が急激に上昇しないようにある程度の時間が
経過した後、図2に示すように水冷チャンバ4の内壁面
が露出するように、上方の2つの断熱部材3a、3bが
それぞれシャフト5a、5bにより引き上げられる。し
たがって、水冷チャンバ4の内壁面が内部の高温の雰囲
気に接触するので、水冷チャンバ4内が冷却される。
When the pulling of the single crystal 12 is completed,
After a certain period of time has elapsed so that the temperature of the cooling water in the water-cooling chamber 4 does not rise sharply, the upper surface of the water-cooling chamber 4 is exposed as shown in FIG. Are lifted by the shafts 5a and 5b, respectively. Therefore, since the inner wall surface of the water cooling chamber 4 comes into contact with the high temperature atmosphere inside, the inside of the water cooling chamber 4 is cooled.

【0014】図3における実線は、自然冷却による従来
例の温度変化を示し、ヒータ2に対する通電を停止した
後、水冷チャンバ4内の酸化が起きない500°C程度
まで低下するまでの時間は約11時間であった。これに
対し、図3における破線は、ヒータ2に対する通電を停
止した後、図2に示すように断熱部材3a、3bを引き
上げて断熱部材3a、3bの間と断熱部材3b、3cの
間を離間し、この離間状態を継続した場合の温度変化を
示し、500°C程度まで低下するまでの時間は約7時
間であった。
The solid line in FIG. 3 shows the temperature change of the conventional example due to natural cooling. The time from when the power supply to the heater 2 is stopped to when the temperature in the water cooling chamber 4 drops to about 500 ° C. at which oxidation does not occur is approximately about 500 ° C. 11 hours. On the other hand, the broken line in FIG. 3 indicates that after the power supply to the heater 2 is stopped, the heat insulating members 3a and 3b are pulled up to separate the heat insulating members 3a and 3b from the heat insulating members 3b and 3c as shown in FIG. However, it shows a temperature change when this separation state is continued, and the time until the temperature drops to about 500 ° C. is about 7 hours.

【0015】また、図3における点線ヒータ2に対する
通電を停止した後、図2に示すように断熱部材3a、3
bを引き上げて断熱部材3a、3bの間と断熱部材3
b、3cの間を離間し、この離間状態を30分継続し、
この後、図1に示すように断熱部材3a、3bを引き下
げて断熱部材3a〜3cを密着させてこの状態を30分
継続し、これを繰り返した場合の温度変化を示し、50
0°C程度まで低下するまでの時間は約6時間であっ
た。
After the power supply to the dotted heater 2 in FIG. 3 is stopped, as shown in FIG.
b and the space between the heat insulating members 3a and 3b and the heat insulating member 3
b, 3c are separated, and this separated state is continued for 30 minutes,
Thereafter, as shown in FIG. 1, the heat insulating members 3a and 3b are lowered and the heat insulating members 3a to 3c are brought into close contact with each other, and this state is continued for 30 minutes.
The time until the temperature dropped to about 0 ° C. was about 6 hours.

【0016】なお、上記実施形態では、上方の2つの断
熱部材3a、3bをそれぞれシャフト5a、5bにより
上方から引き上げるように構成したが、代わりに図4に
示すように断熱部材3a、3b共に下から押し上げるよ
うにしてもよい。また、図5に示すように上方の断熱部
材3aは上から引き上げ、中間の断熱部材3bは下から
押し上げるようにしてもよい。さらに、図6に示すよう
に断熱部材3a、3bを水平方向に支持して押し上げた
り、引き上げるようにしてもよい。また、図示省略され
ているが、断熱部材3は上下方向に分割する代わりに、
円周方向に分割して水冷チャンバ4の内壁面が露出する
ように回動可能に構成してもよい。この場合、回動する
断熱部材の一部が他の断熱部材と少なくとも部分的に重
なり合うよう、回動する軌道が完全な円軌道ではなく、
隣り合う断熱部材をよけるような軌道としておく。さら
に円周方向に分割された断熱部材の少なくとも1つ以上
を、上記実施の形態のように上下方向に分割し、円周方
向にも上下方向にも移動可能とすることもできる。
In the above-described embodiment, the upper two heat insulating members 3a and 3b are configured to be pulled up from above by the shafts 5a and 5b, respectively. However, as shown in FIG. You may make it push up from. Further, as shown in FIG. 5, the upper heat insulating member 3a may be pulled up from above, and the intermediate heat insulating member 3b may be pushed up from below. Further, as shown in FIG. 6, the heat insulating members 3a and 3b may be supported in the horizontal direction and pushed up or pulled up. Although not shown, instead of dividing the heat insulating member 3 vertically,
The water cooling chamber 4 may be rotatable so as to be divided in the circumferential direction so that the inner wall surface of the water cooling chamber 4 is exposed. In this case, the rotating trajectory is not a complete circular trajectory, so that a part of the rotating heat insulating member at least partially overlaps the other heat insulating members.
The orbit should be such that adjacent heat insulating members can be avoided. Further, at least one or more of the heat insulating members divided in the circumferential direction may be divided in the vertical direction as in the above embodiment, and may be movable in the circumferential direction and in the vertical direction.

【0017】これらの上下方向及び/又は円周方向に移
動可能な1つ以上の断熱部材は、水冷チャンバ4の内壁
面の異なる部分が順次前記雰囲気に露出されるよう、断
熱材の各部材間の距離を変更させることが好ましい。こ
の断熱材の各部材間の距離を変更させるためには、例え
ば断熱材の各部材同士を離間させるステップと、近接さ
せるステップを交互に繰り返すことができる。また、水
冷チャンバ4の冷却水温度を複数箇所で検出するように
し、検出された複数箇所の冷却水温度を図示省略の制御
装置に供給し、検出温度に応じて断熱材の各部材間の距
離を自動的に変更させるよう制御するための駆動装置を
設けることも可能である。すなわち、上記実施の形態に
おけるシャフト5a、5bなどを昇降させるためのモー
タと、その回転力によりシャフト5a、5bを昇降させ
るラックアンドピニオン機構などを設けることができ
る。制御装置としては、移動可能な断熱材の部材が複数
あるときは、検出された複数箇所の冷却水温度に応じて
移動させるべき断熱材の部材と、移動方向を決定するた
めのCPU(中央演算処理装置)を用いて、モータを制
御するよう構成することができる。
The one or more heat-insulating members movable vertically and / or circumferentially are provided between the members of the heat-insulating material so that different portions of the inner wall surface of the water-cooling chamber 4 are sequentially exposed to the atmosphere. Is preferably changed. In order to change the distance between the members of the heat insulating material, for example, a step of separating the members of the heat insulating material and a step of bringing the members close to each other can be alternately repeated. Further, the temperature of the cooling water in the water cooling chamber 4 is detected at a plurality of locations, and the detected temperatures of the cooling water at the plurality of locations are supplied to a control device (not shown). It is also possible to provide a driving device for controlling so that is automatically changed. That is, a motor for raising and lowering the shafts 5a and 5b and the like in the above-described embodiment, and a rack and pinion mechanism for raising and lowering the shafts 5a and 5b by its rotational force can be provided. When there are a plurality of movable heat insulating materials, the control device may include a heat insulating material to be moved according to the detected cooling water temperatures at a plurality of locations and a CPU (central processing unit) for determining a moving direction. (Processing device) to control the motor.

【0018】[0018]

【発明の効果】以上説明したように本発明によれば、断
熱材を上下方向及び/又は円周方向に分割して単結晶の
引き上げ終了後に水冷チャンバの内壁面が内部の高温の
雰囲気に露出するように断熱材の各部材間を離間させる
ようにしたので、単結晶引き上げ後の冷却時間を短縮し
て生産性を向上させることができる。
As described above, according to the present invention, the inner wall surface of the water-cooling chamber is exposed to the high temperature atmosphere after the heat insulating material is divided vertically and / or circumferentially and the single crystal is pulled up. Since the members of the heat insulating material are separated from each other, the cooling time after pulling up the single crystal can be shortened, and the productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る単結晶引上げ装置の一実施形態を
示す断面図である。
FIG. 1 is a cross-sectional view showing one embodiment of a single crystal pulling apparatus according to the present invention.

【図2】図1の単結晶引上げ装置の冷却状態を示す断面
図である。
FIG. 2 is a sectional view showing a cooling state of the single crystal pulling apparatus of FIG.

【図3】図1の単結晶引上げ装置及び従来例の冷却時間
を示す説明図である。
FIG. 3 is an explanatory view showing a cooling time of the single crystal pulling apparatus of FIG. 1 and a conventional example.

【図4】第2の実施形態の単結晶引上げ装置を示す断面
図である。
FIG. 4 is a cross-sectional view illustrating a single crystal pulling apparatus according to a second embodiment.

【図5】第3の実施形態の単結晶引上げ装置を示す断面
図である。
FIG. 5 is a sectional view showing a single crystal pulling apparatus according to a third embodiment.

【図6】第4の実施形態の単結晶引上げ装置を示す断面
図である。
FIG. 6 is a sectional view showing a single crystal pulling apparatus according to a fourth embodiment.

【図7】従来の単結晶引上げ装置を示す断面図である。FIG. 7 is a sectional view showing a conventional single crystal pulling apparatus.

【符号の説明】[Explanation of symbols]

1 石英ルツボ 2 ヒータ 3 断熱材 3a〜3c 断熱部材 4 水冷チャンバ 5a、5b シャフト DESCRIPTION OF SYMBOLS 1 Quartz crucible 2 Heater 3 Heat insulating material 3a-3c Heat insulating member 4 Water cooling chamber 5a, 5b Shaft

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 石英ルツボ内の単結晶を加熱するヒータ
と、前記ヒータの回りを水冷チャンバの内壁面に密接す
るように配置した断熱材とを有する単結晶引上げ装置に
おいて、 前記断熱材が上下方向に複数に分割された部材により構
成され、単結晶の引き上げ終了後に前記水冷チャンバの
内壁面の一部が内部の雰囲気に露出されるように前記断
熱材の1つ以上の部材を上又は下方向に移動させて各部
材間を離間可能に構成したことを特徴とする単結晶引上
げ装置。
1. A single crystal pulling apparatus comprising: a heater for heating a single crystal in a quartz crucible; and a heat insulating material arranged around the heater so as to be in close contact with an inner wall surface of a water cooling chamber. One or more members of the heat insulating material so that a part of the inner wall surface of the water cooling chamber is exposed to the internal atmosphere after completion of pulling of the single crystal. A single crystal pulling apparatus characterized in that it is configured to be movable in a direction so that members can be separated from each other.
【請求項2】 前記部材が上下方向に位置する3つ以上
の断熱材部材であり、上段とその下の段の部材が上方向
に移動可能であることを特徴とする請求項1記載の単結
晶引上げ装置。
2. The unit according to claim 1, wherein said members are three or more heat insulating members located in a vertical direction, and members in an upper stage and a lower stage are movable upward. Crystal pulling device.
【請求項3】 前記上下方向に複数に分割された部材の
1つ以上を上又は下方向に移動させるために、一端が移
動すべき部材に接続され、他端が前記水冷チャンバの外
部に突出しているシャフトを有することを特徴とする請
求項1記載の単結晶引上げ装置。
3. One end is connected to a member to be moved, and the other end protrudes out of the water cooling chamber in order to move one or more of the vertically divided members upward or downward. The single crystal pulling apparatus according to claim 1, wherein the single crystal pulling apparatus has a shaft that is bent.
【請求項4】 石英ルツボ内の単結晶を加熱するヒータ
と、前記ヒータの回りを水冷チャンバの内壁面に密接す
るように配置した断熱材とを有する単結晶引上げ装置に
おいて、 前記断熱材が円周方向に複数に分割された部材により構
成され、単結晶の引き上げ終了後に前記水冷チャンバの
内壁面の一部が内部の雰囲気に露出するように前記断熱
材の1つ以上の部材を前記チャンバの円周に沿って移動
させて各部材間を離間可能に構成したことを特徴とする
単結晶引上げ装置。
4. A single crystal pulling apparatus comprising: a heater for heating a single crystal in a quartz crucible; and a heat insulating material disposed around the heater so as to be in close contact with an inner wall surface of a water cooling chamber, wherein the heat insulating material is circular. One or more members of the heat insulating material are formed of a plurality of members that are divided into a plurality of members in the circumferential direction. A single crystal pulling apparatus characterized in that each member is moved along the circumference so as to be separated from each other.
【請求項5】 前記が円周方向に複数に分割された部材
の少なくとも1つが、さらに上下方向に分割され、前記
断熱材の1つ以上の部材を上又は下方向に移動させて各
部材間を離間可能に構成したことを特徴とする請求項4
記載の単結晶引上げ装置。
5. At least one of the members divided into a plurality in the circumferential direction is further divided in the up-down direction, and one or more members of the heat insulating material are moved upward or downward to separate each member. 5. The device according to claim 4, wherein the components are configured to be separated from each other.
The single crystal pulling apparatus as described in the above.
【請求項6】 前記水平方向に複数に分割された部材の
1つ以上を前記チャンバの円周に沿って移動させるため
に、一端が移動すべき部材に接続され、他端が前記水冷
チャンバの外部に突出しているシャフトを有することを
特徴とする請求項4記載の単結晶引上げ装置。
6. One end is connected to a member to be moved, and the other end of the water-cooled chamber is moved to move one or more of the horizontally divided members along the circumference of the chamber. The single crystal pulling apparatus according to claim 4, further comprising a shaft protruding outside.
【請求項7】 石英ルツボ内の単結晶を加熱するヒータ
の回りにおいて水冷チャンバの内壁面に密接するように
配置され、上下方向及び/又は円周方向に分割して配置
された複数の断熱材部材の少なくとも1つの部材を単結
晶の引き上げ終了後に、前記水冷チャンバの内壁面が内
部の雰囲気に露出されるように上又は下方向及び/又は
円周方向に移動させて各部材間を離間可能に構成した単
結晶引上げ装置の冷却方法であって、 前記チャンバの内壁面の異なる部分が順次前記雰囲気に
露出されるよう、前記断熱材の各部材間の距離を変更さ
せるステップを有する単結晶引上げ装置の冷却方法。
7. A plurality of heat insulating materials arranged around a heater for heating a single crystal in a quartz crucible so as to be in close contact with an inner wall surface of a water cooling chamber and divided vertically and / or circumferentially. At least one of the members can be moved upward or downward and / or circumferentially so that the inner wall surface of the water-cooling chamber is exposed to the internal atmosphere after the single crystal has been pulled up, so that the members can be separated from each other. A method for cooling a single crystal pulling apparatus, comprising: changing a distance between members of the heat insulating material so that different portions of an inner wall surface of the chamber are sequentially exposed to the atmosphere. How to cool the device.
【請求項8】 前記断熱材の各部材間の距離を変更させ
るステップが前記断熱材の各部材同士を離間させるステ
ップと、近接させるステップを交互に繰り返すものであ
ることを特徴とする請求項7記載の単結晶引上げ装置の
冷却方法。
8. The method according to claim 7, wherein the step of changing the distance between the members of the heat insulating material alternates the step of separating the members of the heat insulating material from each other and the step of bringing the members close to each other. A method for cooling a single crystal pulling apparatus as described in the above.
【請求項9】 前記チャンバの冷却水温度を複数箇所で
検出するステップをさらに有し、検出された複数箇所の
冷却水温度に応じて前記断熱材の各部材間の距離を変更
させるよう制御し、かつ移動可能な前記断熱材の部材が
複数あるときは、検出された複数箇所の冷却水温度に応
じて移動させるべき前記断熱材の部材と、移動方向を決
定して移動を制御するステップを有することを特徴とす
る請求項7又は8記載の単結晶引上げ装置の冷却方法。
9. The method according to claim 9, further comprising the step of detecting the temperature of the cooling water in the chamber at a plurality of locations, and controlling the distance between the members of the heat insulating material in accordance with the detected temperatures of the cooling water at the plurality of locations. And, when there are a plurality of movable members of the heat insulating material, a step of controlling the movement by determining the moving direction of the heat insulating material and the moving direction according to the detected coolant temperature at the plurality of locations. The method for cooling a single crystal pulling apparatus according to claim 7 or 8, wherein
JP8035198A 1998-03-12 1998-03-12 Device for pulling single crystal and its cooling Withdrawn JPH11255575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8035198A JPH11255575A (en) 1998-03-12 1998-03-12 Device for pulling single crystal and its cooling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8035198A JPH11255575A (en) 1998-03-12 1998-03-12 Device for pulling single crystal and its cooling

Publications (1)

Publication Number Publication Date
JPH11255575A true JPH11255575A (en) 1999-09-21

Family

ID=13715843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8035198A Withdrawn JPH11255575A (en) 1998-03-12 1998-03-12 Device for pulling single crystal and its cooling

Country Status (1)

Country Link
JP (1) JPH11255575A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100876925B1 (en) * 2002-03-19 2009-01-07 닛코킨조쿠 가부시키가이샤 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
KR100891570B1 (en) 2007-11-09 2009-04-03 주식회사 실트론 Apparatus for growing sillicon single crystal and cooling mehtod of the same
JP2011001235A (en) * 2009-06-19 2011-01-06 Sumco Corp Method and apparatus for producing large-diameter silicon single crystal
JP2011057470A (en) * 2009-09-07 2011-03-24 Mitsubishi Materials Techno Corp Apparatus and method for producing single crystal silicon
JP2013035728A (en) * 2011-08-10 2013-02-21 Shin Etsu Handotai Co Ltd Apparatus for growing single crystal
JP2013043817A (en) * 2011-08-26 2013-03-04 Shin Etsu Handotai Co Ltd Single crystal growing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100876925B1 (en) * 2002-03-19 2009-01-07 닛코킨조쿠 가부시키가이샤 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
KR100891570B1 (en) 2007-11-09 2009-04-03 주식회사 실트론 Apparatus for growing sillicon single crystal and cooling mehtod of the same
JP2011001235A (en) * 2009-06-19 2011-01-06 Sumco Corp Method and apparatus for producing large-diameter silicon single crystal
JP2011057470A (en) * 2009-09-07 2011-03-24 Mitsubishi Materials Techno Corp Apparatus and method for producing single crystal silicon
JP2013035728A (en) * 2011-08-10 2013-02-21 Shin Etsu Handotai Co Ltd Apparatus for growing single crystal
JP2013043817A (en) * 2011-08-26 2013-03-04 Shin Etsu Handotai Co Ltd Single crystal growing apparatus

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