JPH11220069A - Semiconductor device and its manufacture, circuit board, and/or electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively absorb thermal stress, by providing an external electrode at a flexible deformation part that is electrically connected to the electrode of a semiconductor element and, at the same time, that is extended by specific length from an active surface in the region of the active surface. SOLUTION: A stress relief layer 16 is formed on an active surface 12a of a semiconductor chip 12 by avoiding an electrode 14, and wiring 18 is formed from the electrode 14 to the stress relief layer 16. A junction part 19 is formed on the wiring 18, and a deformation part 20 with sectional area being smaller than that of the junction part 19 is formed on the junction part 19. The deformation part 20 consists of metal such as copper and vertically rises for the active surface for forming a slender shape in the active surface 12a. Since the deformation part 20 is in the slender shape, it can be flexed. At the tip of the deformation part 20, an external electrode part 22 is formed. The external electrode part 22 is used for electrically connecting a semiconductor device 10 to a packaging substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing the same, a circuit board, and an electronic device.

[0002]

BACKGROUND OF THE INVENTION In pursuit of high-density mounting of a semiconductor device, bare chip mounting is ideal. However, since it is difficult to guarantee the quality and handle the bare chip, it has been dealt with by processing it into a package.

[0003] For example, a CSP (Chi
p Size / Scale Package) has been developed.

Among the CSP type semiconductor devices developed in various forms, as one form, a flexible substrate patterned on the active surface side of a semiconductor chip is provided, and a plurality of external substrates are provided on the flexible substrate. Some have electrodes formed thereon. It is also known to inject resin between the active surface of the semiconductor chip and the flexible substrate to absorb thermal stress. Note that Japanese Patent Application Laid-Open
Japanese Patent Laid-Open No. 297236 describes that a film carrier tape is used as a flexible substrate.

However, since the resin injected between the active surface of the semiconductor chip and the flexible substrate is extremely thin, sufficient absorption of thermal stress has not been achieved.

An object of the present invention is to solve this problem, and an object of the present invention is to provide a semiconductor device capable of effectively absorbing thermal stress, a method of manufacturing the same, a circuit board, and an electronic device. .

[0007]

(1) A semiconductor device according to the present invention comprises a semiconductor element and an electrode which is electrically connected to an electrode of the semiconductor element and has a predetermined length from the active surface in an active surface region. It has a deformed portion that extends and bends, and an external electrode portion provided in the deformed portion.

According to the present invention, there is provided a CSP type semiconductor device in which an external electrode portion is provided in an active surface, wherein a deformed portion is bent. Due to the bending of the deformed portion, thermal stress can be absorbed.

(2) The present invention may include a wiring which is arranged at a position different from the electrode of the semiconductor element and the deformed portion, and electrically connects the electrode of the semiconductor element and the deformed portion. .

By doing so, it is possible to determine the position of the deformed portion as required by drawing wiring in the active surface.

(3) The present invention may have a protective film for covering the wiring and eliminating the exposed surface.

In this manner, the surface of the wiring can be protected by the protective film covering the wiring.

(4) In the present invention, a stress relaxation layer may be provided between the semiconductor element and at least one of the wiring and the deformed portion.

In this manner, both the absorption of the thermal stress by the deformed portion and the absorption of the thermal stress by the stress relieving layer are performed.

(5) The present invention may include a flexible member which is in contact with the deformed portion and elastically deforms in accordance with the deformation of the deformed portion.

By doing so, the deformable portion is supported by the flexible member, so that the deformable portion can be prevented from being plastically deformed by an external force other than thermal stress. Further, the flexible member is elastically deformed in accordance with the deformation of the deformed portion, so that it can absorb thermal stress.

(6) The flexible member includes:
The semiconductor device may cover at least an entire surface of the semiconductor element excluding a region where the external electrode portion is formed.

In this manner, the flexible member can also serve as a protective film on the wiring.

(7) The deformed portion has a columnar shape, and the external electrode portion extends at a right angle from the axis of the deformed portion, and has a plate shape with an area larger than a cross-sectional area of the deformed portion perpendicular to the axis. The flexible member may be provided at an end of the deformable portion, and may be formed inside an outer peripheral end of the external electrode portion.

This prevents the flexible member from protruding outside the external electrode.

(8) In the method of manufacturing a semiconductor device according to the present invention, the semiconductor device is electrically connected to the electrode of the semiconductor element and is extended by a predetermined length from the active surface in the active surface region in a bendable shape. Forming a deformed portion; and forming an external electrode portion on the deformed portion.

According to this method, it is possible to manufacture a CSP type semiconductor device in which the external electrode portion is provided in the active surface and the deformed portion is bent.

(9) The present invention includes a step of forming a wiring by electrically connecting to the electrode of the semiconductor element, wherein the step of forming the deformed portion includes a step of forming a resist portion on the wiring. Forming a hole in the resist portion on the wiring, and forming a deformed portion by casting a metal in the hole through an electroforming method.

By this step, the deformed portion can be easily formed. After the formation of the deformed portion, the resist portion may be left or removed.

(10) The present invention may include, after the step of forming the deformed portion, a step of removing an upper portion of the resist portion so as to remain as a protective film of the wiring.

By doing so, the protective film can cover the wiring and protect the surface.

(11) The step of forming the resist portion includes a step of forming a thin first resist layer sufficient to be used as a protective film for the wiring, and a step of forming a second resist layer thicker than the first resist layer. After the step of forming the deformed portion, removing the second resist layer while leaving the first resist layer, and removing the first and second resist layers.
The materials used for the resist layers may differ in the chemistry when removed.

Thus, a deformed portion is formed using the first and second resist layers, and thereafter, the second resist layer is removed, and the first resist layer can be left as a protective film. In particular, since the chemistry when the first and second resist layers are removed is different, the second resist layer can be easily removed while leaving the first resist layer.

(12) The present invention may include a step of providing a resin which is in contact with the deformed portion and elastically deforms in accordance with the deformation of the deformed portion.

By doing so, the resin supports the deformed portion,
A semiconductor device can be obtained that can prevent the deformed portion from being plastically deformed by an external force other than thermal stress.

(13) The step of forming the resist portion includes a step of forming a thin first resist layer sufficient to be used as a protective film for the wiring, and a step of forming a second resist layer thicker than the first resist layer. Forming the deformed portion, leaving the first resist layer, removing the second resist layer while leaving a region near the deformed portion, and forming the first and the second resist layer. The materials used for the second resist layer may differ in the chemistry when removed.

Here, the second resist layer supports the deformed portion while leaving only the region near the deformed portion, thereby preventing the deformed portion from being plastically deformed by an external force other than thermal stress.

According to this manufacturing method, a deformed portion is formed by using the first and second resist layers, and then the first and second resist layers are formed.
Can be left as a protective film. Since the first and second resist layers differ in chemistry when removed, most of the second resist layer can be easily removed, leaving the first resist layer.

(14) The step of forming the resist portion includes a step of forming a thin first resist layer sufficient to be used as a protective film for the wiring, and a step of forming a second resist layer thicker than the first resist layer. Forming the hole and, at the same time as forming the hole, leaving the first resist layer, removing the second resist layer while leaving a region near the deformed portion, and removing the first and second resist layers. The materials used for the two resist layers may differ in chemistry when removed.

Here, simultaneously with the step of forming a hole, the second
Since the step of removing a part of the resist layer is performed, the process time is shortened.

The second resist layer is a flexible member that is in contact with the outer peripheral surface of the deformed portion, leaving only the region near the deformed portion. Then, a part of the remaining second resist layer supports the deformed portion, thereby preventing the deformed portion from being plastically deformed by an external force other than the thermal stress.

Further, according to this manufacturing method, the first and second resist layers have different chemical properties when they are removed, so that the first resist layer can be easily left as a protective film and the second resist layer can be easily removed. Most of the resist layer can be removed.

(15) The present invention may include, before the step of forming the wiring, a step of forming a stress relaxation layer located below the wiring.

By doing so, it is possible to manufacture a semiconductor device in which both the thermal stress is absorbed by the deformed portion and the thermal stress is absorbed by the stress relaxation layer.

(16) A circuit board according to the present invention has the above semiconductor device mounted thereon.

(17) An electronic device according to the present invention has the circuit board described above.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

Each drawing is partially enlarged for easy understanding. In the following description, the description is made on the assumption that one semiconductor device is finally formed into individual pieces. Therefore, there are some differences from actual terms in terms and shapes used. The portion described as a semiconductor chip is not limited to a piece (that is, a chip shape) as the meaning means, but may be a wafer shape that is not a piece. In other words, it is only necessary that a predetermined circuit that can be used even if separated from the semiconductor chip is formed on a base substrate (for example, made of silicon), and whether it is separated into individual pieces or integrated. Need not be particularly limited. In addition, since only representative portions necessary for description of wiring and the like are shown, similar portions and other structures are omitted in other drawings in each drawing.

(First Embodiment) FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment. The semiconductor device 10 shown in FIG. 1 is a CSP type having a stress relaxation layer 16 and a wiring 18 formed thereon. For more information,
On the active surface 12a of the semiconductor chip 12, a stress relaxation layer 16 is formed avoiding the electrode 14, and a wiring 18 is formed from the electrode 14 to the stress relaxation layer 16.

The stress relaxation layer 16 is made of a polyimide resin. When the semiconductor device 10 is mounted on a substrate (not shown), the stress relaxation layer 16 is formed by a difference in thermal expansion coefficient between the semiconductor chip 12 and the mounted substrate. This is to reduce the generated stress. Further, the polyimide resin has an insulating property with respect to the wiring 18, can protect the active surface 12a of the semiconductor chip 12, and has a heat resistance when melting the solder at the time of mounting. Among the polyimide resins, those having a low Young's modulus (for example, olefin-based polyimide resin or BCB manufactured by Dow Chemical Co., Ltd.) are preferably used, and particularly preferably the Young's modulus is about 40 to 50 kg / mm ² . Although the stress relaxation force of the stress relaxation layer 16 increases as the thickness thereof increases, the thickness is preferably about 1 to 100 μm in consideration of the size of the semiconductor device and the manufacturing cost.
However, when a polyimide resin having a Young's modulus of about 40 to 50 kg / mm ² is used, a thickness of about 10 μm is sufficient.

Alternatively, the stress relaxation layer 16 may be made of a material having a low Young's modulus and capable of relaxing stress, such as a silicone-modified polyimide resin, an epoxy resin, or a silicone-modified epoxy resin. In addition, stress relaxation layer 1
6 instead of a passivation layer (SiN, SiO ₂
), And the stress relaxation itself is performed by a deformed portion 20 described later.
May be performed. In this case, the stress relaxation layer 16 may be additionally provided.

The wiring 18 is made of chrome (Cr).
Here, chromium (Cr) was selected because of its good adhesion to the polyimide resin constituting the stress relaxation layer 16. Alternatively, in consideration of crack resistance, an aluminum alloy such as aluminum, aluminum silicon, or aluminum copper, a copper alloy, or a metal having ductility (extending property) such as copper (Cu) or gold may be used. Alternatively, if titanium or titanium tungsten having excellent moisture resistance is selected, disconnection due to corrosion can be prevented. Titanium is also preferable from the viewpoint of adhesion to polyimide. The wiring is
Two or more layers may be formed by combining the above metals. The wiring material is common to the following embodiments.

A junction 19 is formed on the wiring 18,
A deformed portion 20 having a smaller cross-sectional area than the joint 19 is formed on the joint 19. The deforming portion 20 is made of a metal such as copper, and rises substantially perpendicularly to the active surface within the active surface 12a to have an elongated shape. The deformation unit 20
Since it has an elongated shape, it can be bent as shown by a two-dot chain line on the left side of FIG.

An external electrode portion 22 is formed at the tip of the deformed portion 20. The external electrode portion 22 is for electrically connecting the semiconductor device 10 to a mounting board (not shown), and may be provided with a solder ball or the like thereon. The external electrode portion 22 is formed in a size that allows electrical connection with a mounting board or solder ball mounting. Alternatively, the tip of the deformable portion 20 may be the external electrode portion 22. This is common to the following embodiments.

A solder resist 24 is provided on the wiring 18 and the stress relieving layer 16 so as to cover the entire upper surface of the active surface 12a. This solder resist 24
Protects the wiring 18 and the active surface 12a to prevent their corrosion and the like.

According to the present embodiment, when the deforming section 20 bends and deforms, the external electrode section 22 moves accordingly. Thus, the thermal stress applied to the external electrode portion 22 of the semiconductor device 10 is absorbed by the deformation of the deformation portion 20.

In this embodiment, the stress relaxation layer 16 is formed. However, since the deformed portion 20 is formed so as to be more easily deformed than the stress relaxation layer 16, the deformed portion 2 is formed.
It is possible to absorb the thermal stress with only 0. Therefore, even in a structure in which a layer (for example, a mere insulating layer or a protective layer) made of a material having no stress relaxation function is formed instead of the stress relaxation layer 16, thermal stress can be absorbed.

(Second Embodiment) FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment. In the semiconductor device 30 shown in the figure, a wiring 38 is formed on a passivation film (not shown) of a semiconductor chip 32. The wiring 38 extends from the electrode 34 provided at the end of the active surface 32 a of the semiconductor chip 32 in the center direction. A deformed portion 40 is provided near the center of the active surface 32 a and on the wiring 38. An external electrode section 42 is provided at the tip of the deforming section 40. The configurations and functions of the deformed portion 40 and the external electrode portion 42 are the same as those of the deformed portion 20 and the external electrode portion 22 shown in FIG. Then, a protective film 36 is formed on the wiring 38 and covering the active surface 32a.
The protection film 36 protects the wiring 38 from oxidation and the like. In the present embodiment, the protective film 36 is formed from a photoresist (a photosensitive polyimide resin or the like).
It may be formed from a resist intended for other than visible light.

Also in this embodiment, deformation of the deformable portion 40 can absorb thermal stress.

Next, FIGS. 3A to 5B are views showing a method of manufacturing the semiconductor device shown in FIG. This method is a method in which a plurality of semiconductor devices are integrally manufactured in a wafer state and then cut into individual pieces.

First, the electrodes 34 and other elements are formed on the wafer 50 by a well-known technique until the state before dicing is performed (see FIG. 3A). In the present embodiment, the electrode 34 is made of aluminum, but may be made of an aluminum alloy-based material (for example, aluminum silicon or aluminum silicon copper) or a copper-based material.

On the surface of the wafer 50, a passivation film (not shown) made of an oxide film or the like is formed to prevent a chemical change. The passivation film is formed not only to avoid the electrode 34 but also to avoid the scribe line where dicing is performed. By not forming a passivation film on the scribe line, generation of dust generated by the passivation film at the time of dicing can be avoided, and further, generation of cracks in the passivation film can be prevented.

Subsequently, sputtering is performed using the wafer 50 as a target to remove foreign substances on the surface of the wafer 50.

Next, as shown in FIG.
To form Specifically, a case in which a titanium tungsten (TiW) layer and a copper (Cu) layer are formed on the entire surface of the wafer 50 by sputtering will be described.
A copper plating layer is formed on the copper layer by an electroplating method. Then, the wiring 38 is formed by performing dry etching on the titanium tungsten layer, the copper layer, and the copper plating layer by applying a photolithography technique.

Next, as shown in FIG.
A photosensitive polyimide resin is applied to the entire surface of the wafer 50 so as to cover the upper surface of the wafer 50 to form a protective film 36.

Then, as shown in FIG. 3C, a mask 52 is disposed above the protective film 36. In the mask 52,
A hole 52a is formed corresponding to the formation area of the deformed portion 40 shown in FIG. The deformation part 40 is located on the wiring 38. In order to form the deformed portion 40, it is preferable that a land having a larger area than the width of the wiring 38 itself is formed in the wiring 38. The protective film 36 is exposed by irradiating light 54 from above the mask 52, and thereafter, steps of drying, developing, washing, drying and curing are performed. Thus, a hole 36a is formed in the protective film 36 as shown in FIG. The hole 36a is
It penetrates to the wiring 38.

Subsequently, as shown in FIG. 4B, a resist layer 56 is formed on the protective film 36. Resist layer 56
Is made of a photosensitive resin different from the protective film 36. Specifically, the resist layer 56 differs from the protective film 36 in properties when chemically removed. Then, even if the resist layer 56 is removed, the protective film 36 is not removed. The resist layer 56 is formed thicker (for example, about 100 to 300 μm) than the protective film 36. This thickness corresponds to the height of the deformed portion 40.

Then, as shown in FIG. 4C, a mask 52 is arranged above the resist layer 56. Mask 52
Is used when forming the hole 36 a in the protective film 36, and the hole 52 a is arranged corresponding to the hole 36 a of the protective film 36. The resist layer 56 is exposed by irradiating light 54 from above the mask 52, and thereafter, steps of drying, developing, washing, drying and curing are performed.

Thus, as shown in FIG. 5A, a hole 56a is formed in the resist layer 56. The hole 56 a communicates with the hole 36 a of the protective film 36, and the hole 36 a
All the way through.

Subsequently, as shown in FIG.
The deformed portion 40 is formed in the hole a and the hole 56a by plating a metal by an electroforming method (electroplating method), an electroless plating method, or the like. The metal used here has high conductivity such as copper. Further, an external electrode part 42 is formed on the upper end of the deformed part 40. The formation of the external electrode portion 42 is performed by
May be performed continuously with the formation of. In that case, the external electrode portion 42 is formed from the same metal as the deformed portion 40, but as described in the first embodiment, another metal having high conductivity may be used.

After that, the resist layer 56 is removed. As described above, the resist layer 56 and the protective film 36 are different in chemical properties, and the protective film 36 remains even when the resist layer 56 is removed. Then, the semiconductor device 30 shown in FIG. 2 is obtained by cutting the wafer 50 into individual pieces. In addition, you may mount a solder ball on the external electrode part 42 as needed.

According to the above steps, almost all steps can be performed by a wafer process. Specifically, a plurality of semiconductor devices are manufactured integrally, and thereafter, the semiconductor device 30 is obtained by cutting the wafer 50 into individual pieces.

As described above, if almost all the steps are performed in the wafer process and then the individual semiconductor devices are cut, a large number of semiconductor devices 30 can be formed at the same time, so that the manufacturing process can be simplified.

In the above step, the resist layer 56 may be left without being removed. In this case, the resist layer 56
When formed from a material having a low Young's modulus,
0 is a flexible member in contact with the outer peripheral surface. The resist layer 56 prevents the deformed portion 40 from being plastically deformed by an external force or the like.

In the above process, the holes 36a and 56a are formed by photolithography, but they may be formed by using a laser.

(Third Embodiment) FIG. 6 is a sectional view showing a semiconductor device according to a third embodiment. The semiconductor device 60 shown in the same figure has a flexible portion 62 provided around the deformed portion 40 of the semiconductor device 30 shown in FIG. For more information,
The flexible portion 62 is made of a resin such as a polyimide resin that can function to relieve the stress described in the first embodiment, and it is particularly preferable to use a resin having a low Young's modulus.

According to the present embodiment, the flexible portion 62 is in contact with the outer peripheral surface of the deformable portion 40, and the flexible portion 62 is also elastically deformed in accordance with the deformation of the deformable portion 40. Thereby, the deforming part 40
Is supported, and plastic deformation of the deformed portion 40 due to external force or the like is prevented.

(Fourth Embodiment) FIG. 7A is a sectional view showing a semiconductor device according to a fourth embodiment. The semiconductor device 70 shown in FIG. 7 includes the semiconductor chip 32, the electrodes 34, the protective film 36, the wiring 38, the deformed portion 40, and the external electrode portion 42 shown in FIG. The flexible portion 72 is provided so as to be in contact with the outer peripheral surface of the deformable portion 40. More specifically, the external electrode portion 42 is formed so as not to exceed the outer shape of the external electrode portion 42.
The flexible part 72 is provided under the lower part. The flexible part 72
Is made of a photoresist such as a polyimide resin having a low Young's modulus.

FIG. 7B is a diagram showing a method of manufacturing the semiconductor device 70. In the figure, a protective film 36 is formed on an active surface 32a of a semiconductor chip 32, and a resist layer 74 is formed on the protective film 36. This state is similar to the state shown in FIG. 5B, and is formed by a similar method. The resist layer 74 corresponds to the resist layer 56 shown in FIG.

Then, a mask 76 is arranged above the resist layer 74. An opening 76 a is formed in the mask 76 so as to correspond to the outside of the external electrode section 42. Therefore, when the resist layer 74 is exposed to light through the mask 76 and developed to remove the exposed region, the resist layer 74 remains below the external electrode portion 42 and the flexible portion 72 remains as shown in FIG. Remains.

Also in the present embodiment, the flexible portion 72 is
The flexible portion 72 is elastically deformed in accordance with the deformation of the deformable portion 40. As a result, the deformable portion 40 is supported, and plastic deformation of the deformable portion 40 due to external force or the like is prevented.

The removal of the resist layer 74 may be performed by dry or wet etching.

FIGS. 8A and 8B are views showing a modification of the method for manufacturing a semiconductor device according to the fourth embodiment. In this modification, as shown in FIG. 8A, a protective film 36 is formed on the active surface 32a of the semiconductor chip 32, a hole 36a is formed in the protective film 36, and then a resist is formed on the protective film 36. A layer 78 is formed. The resist layer 78 is formed as shown in FIG.
It is formed from the same material as the resist layer 74 shown in FIG.

Then, a mask 80 is formed on the resist layer 78.
Place. The mask 80 is a flexible part 7 shown in FIG.
A pattern corresponding to the planar shape of No. 2 is formed. That is, the mask 80 has the opening 80 a corresponding to the outside of the outer shape of the flexible portion 72 and the hole 80 b located above the hole 36 a of the protective film 36.

Therefore, when the resist layer 78 is exposed to light through this mask 80 and developed to remove the exposed region, the column portion 82 remains as shown in FIG. 8B. A hole 82 a communicating with the hole 36 a of the protective film 36 is formed in the cylindrical portion 82.
Are formed.

The deformed portion 40 is inserted in the holes 82a and 36a.
Is formed, the cylindrical portion 82 becomes the flexible portion 72, and the semiconductor device 70 shown in FIG. 7A can be manufactured.

According to the present modification, the formation of the hole 82a and the removal of the exposed area of the resist layer 78 can be performed simultaneously, so that the process can be shortened.

FIG. 9 shows a typical CS to which the present invention is applied.
FIG. 2 is a plan view of the semiconductor device illustrated in FIG. 1 as a P-type semiconductor device. In the figure, the electrodes 14 of the semiconductor chip 12
From this, the wiring 18 is formed in the center direction of the active surface 12a,
Each wiring 18 is provided with an external electrode portion 22 via a deformed portion 20 (see FIG. 1). All the external electrode parts 22 are
As shown in FIG. 1, it is provided on the stress relaxation layer 16. Then, the deformed portion 20 (see FIG. 1) and the stress relaxation layer 1
6, the stress when mounted on a circuit board (not shown) can be reduced. The stress relaxation layer 16
Is not an essential component, so that stress can be alleviated only by the deformed portion 20. Further, a solder resist 24 is formed as a protective film in a region excluding the external electrode portion 22.

The electrode 14 is an example of a so-called peripheral electrode type located at the peripheral portion of the semiconductor chip 12. An area array type semiconductor chip having electrodes formed in a region inside the peripheral region of the semiconductor chip is used. May be used.

As shown in the figure, the external electrode portion 22 is not on the electrode 14 of the semiconductor chip 12 but on the active area of the semiconductor chip 12 (the area where active elements are formed).
It is provided in. Providing a stress relaxation layer 16 in the active area;
Further, by disposing (pulling) the wiring 18 in the active area, the external electrode portion 22 can be provided in the active area. That is, pitch conversion can be performed. Therefore, when arranging the external electrode section 22, an active area, that is, an area as a fixed surface can be provided, and the degree of freedom of the setting position of the external electrode section 22 is greatly increased.

The external electrode portions 22 are provided in a grid pattern by bending the wiring 18 at necessary positions. Since this is not an essential configuration of the present invention, the external electrode portions 22 need not necessarily be provided so as to be arranged in a grid.

In FIG. 9, the width of the electrode 14 and the width of the wiring 18 at the junction between the electrode 14 and the wiring 18 are such that the wiring 18 <the electrode 14. Is preferred. In particular, when the electrode 14 is smaller than the wiring 18, not only the resistance value of the wiring 18 is reduced but also the strength is increased, so that disconnection is prevented.

The present invention is not limited to a CSP type semiconductor device. For example, when a deformed portion is directly laminated on an electrode of a semiconductor chip, a semiconductor device having the same size as a flip chip but also having a stress relaxation function can be obtained.

FIG. 10 shows a circuit board 1000 on which a semiconductor device 1100 manufactured by the method according to the above-described embodiment is mounted. Generally, an organic substrate such as a glass epoxy substrate is used for the circuit board 1000. A wiring pattern made of, for example, copper is formed on the circuit board 1000 so as to form a desired circuit, and the circuit board 1000 is provided with solder balls. Then, by electrically connecting the solder balls of the wiring pattern and the external electrode portions of the semiconductor device 1100, their electrical continuity is achieved.

In this case, since the semiconductor device 1100 is provided with a structure for absorbing a distortion caused by a difference in thermal expansion with the outside, the semiconductor device 1100 is mounted on the circuit board 1000.
, The reliability at the time of connection and thereafter can be improved.

The mounting area can be reduced to the area mounted with bare chips. Therefore, if the circuit board 1000 is used for an electronic device, the size of the electronic device itself can be reduced. In addition, more mounting space can be secured within the same area, and higher functionality can be achieved.

FIG. 11 shows a notebook personal computer 1200 as an electronic apparatus having the circuit board 1000.

The present invention can be applied to various electronic components for surface mounting regardless of whether they are active components or passive components. Examples of the electronic component include a resistor, a capacitor, a coil, an oscillator, a filter, a temperature sensor, a thermistor, a varistor, a volume, and a fuse.

[0094]

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a semiconductor device according to a first embodiment.

FIG. 2 is a diagram illustrating a semiconductor device according to a second embodiment;

FIGS. 3A to 3C are diagrams illustrating a method of manufacturing a semiconductor device according to a second embodiment.

FIGS. 4A to 4C are diagrams illustrating a method for manufacturing a semiconductor device according to a second embodiment.

FIGS. 5A and 5B are diagrams illustrating a method for manufacturing a semiconductor device according to a second embodiment.

FIG. 6 is a sectional view showing a semiconductor device according to a third embodiment.

FIGS. 7A and 7B are diagrams showing a semiconductor device according to a fourth embodiment and a method for manufacturing the same.

FIGS. 8A and 8B are views showing a modification of the method for manufacturing a semiconductor device according to the fourth embodiment.

FIG. 9 is a diagram showing a typical CSP type semiconductor device to which the present invention is applied;

FIG. 10 is a diagram illustrating a circuit board on which the semiconductor device according to the embodiment is mounted;

FIG. 11 is a diagram illustrating an electronic apparatus including a circuit board on which the semiconductor device according to the embodiment is mounted;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor device 12 Semiconductor chip 12a Active surface 14 Electrode 16 Stress relaxation layer 18 Wiring 20 Deformation part 22 External electrode part 36 Protective film 56 Resist layer (flexible member) 72 Flexible part (flexible member)

Claims (17)

[Claims] 1. A semiconductor element, a deformable portion electrically connected to an electrode of the semiconductor element and extending from the active surface by a predetermined length in an active surface region to form a bendable shape; A semiconductor device comprising: an external electrode unit provided in the unit. 2. The semiconductor device according to claim 1, further comprising a wiring arranged at a position different from the electrode of the semiconductor element and the deformed portion, and electrically connecting the electrode of the semiconductor element and the deformed portion. Semiconductor device. 3. The semiconductor device according to claim 2, further comprising a protective film that covers the wiring and eliminates an exposed surface. 4. The semiconductor device according to claim 2, wherein a stress relaxation layer is provided between the semiconductor element and at least one of the wiring and the deformed portion. 5. The semiconductor device according to claim 1, further comprising: a flexible member which is in contact with said deformable portion and elastically deforms in accordance with the deformation of said deformable portion. 6. The semiconductor device according to claim 5, wherein the flexible member covers an entire surface of the semiconductor element excluding at least a region where the external electrode portion is formed. 7. The semiconductor device according to claim 5, wherein the deformed portion has a columnar shape, and the external electrode portion extends at a right angle from an axis of the deformed portion, and has a cross-sectional area perpendicular to the axis at the deformed portion. A semiconductor device formed in a plate shape with a large area and provided at a tip of the deformable portion, wherein the flexible member is formed inside an outer peripheral end of the external electrode portion. 8. A step of electrically connecting to an electrode of a semiconductor element and extending a predetermined length from the active surface in the active surface region in a bendable shape to form a deformed portion; Forming an external electrode portion. 9. The method of manufacturing a semiconductor device according to claim 8, further comprising: forming a wiring by electrically connecting to the electrode of the semiconductor element; Manufacturing a semiconductor device, comprising: forming a resist portion; forming a hole in the resist portion on the wiring; and forming a deformed portion by casting metal in the hole through an electroforming method. Method. 10. The method for manufacturing a semiconductor device according to claim 9, wherein after the step of forming the deformed portion, an upper portion of the resist portion is removed so as to remain as a protective film of the wiring. A method for manufacturing a semiconductor device including steps. 11. The method of manufacturing a semiconductor device according to claim 9, wherein the step of forming the resist portion includes a step of forming a thin first resist layer sufficient to serve as a protective film for the wiring.
Forming a second resist layer thicker than the first resist layer, after the step of forming the deformed portion, removing the second resist layer while leaving the first resist layer A method of manufacturing a semiconductor device, wherein materials used for the first and second resist layers differ in chemical properties when removed. 12. The method of manufacturing a semiconductor device according to claim 10, further comprising: providing a resin that is in contact with the deformed portion and elastically deforms according to the deformation of the deformed portion. 13. The method of manufacturing a semiconductor device according to claim 9, wherein the step of forming the resist portion includes a step of forming a thin first resist layer sufficient to serve as a protective film for the wiring.
Forming a second resist layer thicker than the first resist layer, after forming the deformed portion, leaving the first resist layer and leaving a region near the deformed portion A method for manufacturing a semiconductor device, wherein the second resist layer is removed, and materials used for the first and second resist layers differ in chemical properties when removed. 14. The method of manufacturing a semiconductor device according to claim 9, wherein the step of forming the resist portion includes a step of forming a thin first resist layer sufficient to serve as a protective film for the wiring.
Forming a second resist layer thicker than the first resist layer, while leaving the first resist layer at the same time as the formation of the hole, and leaving a region near the deformed portion. A method for manufacturing a semiconductor device, wherein a second resist layer is removed, and materials used for the first and second resist layers differ in chemical properties when removed. 15. The method for manufacturing a semiconductor device according to claim 9, further comprising a step of forming a stress relaxation layer located below the wiring before the step of forming the wiring. A method for manufacturing a semiconductor device. 16. A circuit board on which the semiconductor device according to claim 1 is mounted. 17. An electronic apparatus having the circuit board according to claim 16.