JPH11214581A - High-frequency circuit device and method for adjusting its transmission characteristic - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adjust the characteristic impedance of the connecting section be tween a high-frequency circuit element and an object to be connected and, at the same time, to reduce the reflection loss caused by means of a parasitic circuit at the connecting section. SOLUTION: The distance from the node between a wire 9 and a signal line 5 to the end section of the line 5, etc., is estimated in advance. Then stubs 24 and 24 which are formed by taking the transmission characteristics when a parasitic circuit component generated at the part behaves itself as an open stub into account are provided in the signal line 5 of a circuit element 22 on the side on which the line 5 is connected to a circuit element 23 through wires 9, 10, and 10 and to the signal line 5 of the circuit element on the side on which the line 5 is connected to a package substrate 2 through wires 9, 10, and 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit device having a high-frequency circuit element configured as, for example, an MMIC or the like, and a transmission characteristic adjusting method of the high-frequency circuit device.

[0002]

In such a high-frequency circuit device, as the frequency of a signal to be handled becomes higher, if the entire device is sealed with a resin or the like, the value of the characteristic impedance tends to be greatly shifted from the initial design value. If the adjustment range is strict, normal operation may not be performed.
For this reason, especially in a high frequency circuit device that handles signals in a high frequency region such as a millimeter wave, resin sealing is often not performed.

FIG. 16 shows an example of the configuration of such a high-frequency circuit device. On the package substrate 2 of the high-frequency circuit device 1, two circuit elements 3 and 4 independently formed as chips are mounted in a state where they are fixed by bonding or the like. M
MIC (Monolithic Microwave / Milli-wave Integrated
The circuit elements 3 and 4 on which the integrated circuit portions 3a and 4a are formed as a (Circuit), for example, are configured using a semiconductor substrate such as gallium arsenide suitable for high-frequency use.
A predetermined process is performed on each of the given high-frequency signals.

The circuit elements 3 and 4 include a signal line 5 connected to the integrated circuit portions 3a and 4a, and ground electrodes 6 and 6 arranged on both sides of the signal line 5. That is, the signal line 5 and the ground electrodes 6 and 6
A coplanar line is configured as a signal transmission path.

On the other hand, on the package substrate 2 side, a signal line 7 and ground electrodes 8, 8 arranged on both sides of the signal line 7 are arranged for transmitting a high-frequency signal to and from the outside. These are connected to the signal line 5 of the circuit elements 3 and 4 and the ground electrodes 6 and 6 by connecting wires 9 and 10 and 10, respectively.

The package substrate 2 includes a circuit element 3
And a low-frequency electrode 11 for supplying DC power from outside to the integrated circuit units 3a and 4a or transmitting a low-frequency signal to and from the outside. Between the electrode 11 and the integrated circuit portions 3a and 4a,
They are connected by wires 12.

As described above, when connecting between the circuit elements 3 and 4 or between the package substrate 2 and the circuit elements 3 and 4 by the wires 9 and 10 or the connection ribbon, the following problems occur. is there. First, the characteristic impedance of the signal transmission lines of the circuit elements 3 and 4 that handle high-frequency signals is designed to have a constant value of, for example, 50Ω. Becomes a locally different value and increases the return loss.

Second, the wires 9 and 10 are connected to the signal line 5 and the ground electrodes 6 and 6 on the circuit elements 3 and 4, respectively.
When connecting to the signal line 7 and the ground electrodes 8 on the package substrate 2 and using a manual bonding device with poor positioning accuracy, the following problems occur.

As shown in FIGS. 17 and 18 as a plan view and a sectional view, a portion from each connection point Pa and Pb of the wire 9 to the signal line 5 of the circuit elements 3 and 4 to one end Ta and Tb of the signal line 5. 5 ', 5' distance La and Lb
(See FIG. 18) may have a length that cannot be ignored compared to the wavelength λ of the signal to be handled. Then, a parasitic circuit component is generated at the connection portion, which also increases the return loss.

As a conventional technique for solving the first problem, there is one disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 9-148524. This is a method in which a signal transmission path is configured by a microstrip line, and ground potential bonding pads are provided on both sides of a bonding pad of a high-frequency transmission line at a connection portion between circuit elements, and these bonding pads are connected by wires. Thus, a pseudo coplanar line is formed, and furthermore, a dielectric material is filled between the wire and the base substrate (ground potential substrate) to adjust the characteristic impedance at the connection portion.

However, in this prior art,
The second problem is not taken into consideration at all, and it cannot deal with reflection loss caused by a parasitic circuit generated at a connection portion.

The present invention has been made in view of the above circumstances, and has as its object to adjust the characteristic impedance of a connection portion between a high-frequency circuit element and a connection target, and to reflect a parasitic circuit generated at the connection portion. An object of the present invention is to provide a high-frequency circuit device capable of reducing loss.

[0013]

According to the high frequency circuit device of the first aspect, signal line connecting means for connecting between a signal line on a high frequency circuit element and a signal line on an external connection target, and the connection thereof. Since a stub for adjusting the transmission characteristics is formed on the signal line on the high-frequency circuit element near the point, for example, the length of the signal line connecting means, the distance from the connection point of the signal line connecting means to the end of the signal line, etc. If the shape of the stub is set by estimating in advance, it is possible to adjust the local characteristic impedance of the signal line connecting means to match the characteristic impedance of the high-frequency circuit element.

Further, even if it is unavoidable that a parasitic circuit component is generated at a portion where the signal line connecting means and the signal line face each other due to, for example, a limit of bonding accuracy, the reflection loss due to the parasitic circuit component is reduced. Since the adjustment can be performed so as to reduce, the transmission efficiency of the high-frequency signal can be further improved.

According to the high-frequency circuit device of the second aspect,
Since the dielectric material fills the signal line connecting means and the portion where the signal line connecting means and the signal line face each other, in addition to the adjustment by the stub, a dielectric material having an appropriate relative permittivity is appropriately selected. Thus, the characteristic impedance of the signal line connecting means can be adjusted or the reflection loss due to the parasitic circuit component can be adjusted, so that the adjustment can be performed with higher accuracy.

According to the high frequency circuit device of the third or fourth aspect, there is provided a ground electrode connecting means for connecting between the ground electrode on the high frequency circuit element and the ground electrode on the external connection target. In addition, the gap between the signal line connection means and the ground electrode connection means is filled with the dielectric material, and the ground electrode connection means and the portion where the ground electrode connection means faces the ground electrode are also filled. Claim 4) For example, even when the transmission line is configured as a coplanar line,
The characteristic impedance of the signal line connection means can be adjusted in the same manner as described above.

According to the high frequency circuit device of the fifth aspect,
Since the stub is also covered with the dielectric material, the transmission characteristics of the stub portion can be adjusted based on the relative permittivity of the dielectric material.

According to the high frequency circuit device of the sixth or seventh aspect, the signal line connecting means is constituted by a wire or a ribbon, and the ground electrode connecting means is constituted by a wire, a ribbon or a conductor plate. Further, since the signal line connection means and the ground electrode connection means are constituted by bumps (claim 7), the same effects as described above can be obtained even when each connection means is specifically constituted by various elements.

According to the high-frequency circuit device of the eighth or ninth aspect, the external connection target is the high-frequency circuit element (claim 8) or the package on which the high-frequency circuit element is mounted (claim 9). The same effect as described above can be obtained for a portion where the high-frequency circuit element is connected to another high-frequency circuit element (claim 8) or a portion where the high-frequency circuit element is connected to a package in which the high-frequency circuit element is mounted (claim 9).

According to the transmission characteristic adjusting method of the high-frequency circuit device according to the tenth or eleventh aspect, the stub in the high-frequency circuit device according to the first or third aspect is adjusted according to the transmission characteristic after the signal line connecting means is connected. Since the transmission characteristics are adjusted by trimming (claim 10) or according to the transmission characteristics after the signal line connection means and the ground electrode connection means have been connected (claim 11), each connection means is actually adjusted. Can adjust the characteristic impedance by trimming and adjusting the stub in accordance with the state in which the stub is connected to the signal line or the ground electrode, or can adjust the transmission characteristics by reducing the influence of the parasitic circuit component.

According to the transmission characteristic adjusting method for a high-frequency circuit device according to the twelfth aspect, the dielectric material according to the fifth aspect is disposed after the stub is trimmed. Adjustments can be made with the relative permittivity of the dielectric material.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS.
The same parts as those in FIGS. 16 to 18 are denoted by the same reference numerals and description thereof will be omitted. Only different parts will be described below.
As shown in FIGS. 1 and 2, circuit elements (high-frequency circuit elements) 22 and 23 mounted on the high-frequency circuit device 21 in the present embodiment are connected to the signal lines 5 of the circuit elements 3 and 4 of the high-frequency circuit device 1. And stubs 24 for adjusting transmission characteristics.

On the circuit element 22 side, the circuit element 23 to be connected and the wires 9 (signal line connection means) and 10, 10
On the side connected by (ground electrode connection means), a stub 24 having a shape protruding toward the ground electrode 6 is formed between the connection point Pa of the signal line 5 and the wire 9 and the end Ta of the signal line 5. (See FIG. 2). Also,
On the circuit element 23 side, a stub 24 is formed on the side connected to the package substrate (package) 2 to be connected by the wires 9, 10, 10 in the same manner as the circuit element 22.

The shape (width and length) of each stub 24, 24
Is to estimate the length of the wires 9 and 10, 10 and the distance from the connection point Pa of the wire 9 to the end Ta of the signal line 5 in advance, so that a parasitic circuit component generated in the portion behaves as an open stub. Considering transmission characteristics,
The reflection loss caused by the transmission characteristics of the open stub is set to be reduced by forming the stubs 24, 24.

That is, assuming that the distance from the connection point Pa to the end Ta is L, if the distance L is a distance that cannot be ignored with respect to the wavelength λ of the high-frequency signal, the parasitic circuit component that behaves as an open stub Is generated. At this time,
Depending on the ratio between the distance L and the wavelength λ, the open stub exhibits band-pass characteristics or high-frequency characteristics with respect to a high-frequency signal.

Therefore, in consideration of, for example, the accuracy of the bonding apparatus, the ratio of the distance L to the wavelength λ of the high-frequency signal when wire bonding is performed is predicted to determine the transmission characteristics of the open stub. And the shape of each of the stubs 24 is set so that the overall transmission characteristic obtained by combining the stub 24 with the open stub approaches the band-pass characteristic.

As described above, according to this embodiment, the circuit element 23 and the wires 9 and 1 are connected to the signal line 5 of the circuit element 22.
0 and 10, and the signal line 5 of the circuit element 23 is connected to the package substrate 2 and the wires 9 and 10,.
Since the stubs 24, 24 are provided on the side connected by 10, respectively, it is possible to minimize the deterioration of the transmission characteristic of the high-frequency signal due to the parasitic circuit component.

(Second Embodiment) FIG. 3 shows a second embodiment of the present invention. Only parts different from the first embodiment will be described. FIG. 3 is a diagram corresponding to FIG. 2 of the first embodiment,
The high-frequency circuit device 25 of the second embodiment differs from the stub 24 of the first embodiment in the position of a stub 26 provided on the signal line 5 of a circuit element (high-frequency circuit element) 22 '. That is, the stub 26 of the circuit element 22 ′ is formed on the side opposite to the end Ta of the signal line 5 from the connection point Pa of the wire 9.

By providing the stub 26 at such a position, the impedance is adjusted when all the parasitic circuit components from the wires 9 and 10, and the connection point Pa to the end Ta of the signal line 5 are included. be able to.

That is, the left side of the branch point of the stub 26 (FIG. 3)
As seen from the right side, all impedances Z of the connection portion including the wires 9 and 10, 10 and the like are Z1 and the impedance of the connection portion as viewed from the right side of the stub 26 is Z2. , Z = Z
1 + Z2.

Therefore, as in the first embodiment, the length of the wires 9 and 10, 10 and the distance from the connection point Pa of the wire 9 to the end Ta of the signal line 5 are estimated in advance, and the impedance Z1 is assumed. The shape of the stub 26 is determined so that the impedance Z obtained by adding the impedance Z2 of 26 corresponds to the characteristic impedance (for example, 50Ω) of the transmission line including the signal line 5 and the ground electrodes 6 and 6.

As described above, according to the second embodiment, the stub 26 is formed on the signal line 5 of the circuit element 22 'from the connection point Pa of the wire 9 to the side opposite to the end Ta of the signal line 5. The overall impedance of the connection
The characteristic impedance of the transmission line can be matched, and the transmission efficiency of a high-frequency signal can be improved.
(Third Embodiment) FIGS. 4 and 5 show a third embodiment of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. explain. The high-frequency circuit device 27 in the third embodiment includes the first
A circuit element (high-frequency circuit element) 22a is arranged instead of the circuit element 22 of the high-frequency circuit device 21 of the embodiment.

Also, instead of the circuit element 23, the circuit element 2
A circuit element (connection target, high-frequency circuit element) 28 that is flip-chip connected to the package substrate 2a and the package substrate 2 is arranged. Then, the circuit element 28 and the circuit element 22a
And the package substrate 2 are connected by bumps 29 (signal line connecting means), 30, and 30 (ground electrode connecting means) made of solder.

On the signal line 5 of the circuit element 22a, a stub 24a is formed near the connection point with the bump 29. As in the second embodiment, the shape of the stub 24a is the shape of the bumps 29 and 30, and the distance between the circuit element 28, the circuit element 22a, and the package substrate 2 caused by the connection by the bumps 29 and the like. And bump 2
The distance between the end of the signal line 5 and the end of the signal line 5 is estimated in advance, and set so that the overall impedance of the connection portion by the bump 29 or the like matches the characteristic impedance of the transmission line.

As described above, according to the third embodiment, even when the circuit element 28 is flip-chip connected to the circuit element 22a and the package substrate 2 by the bumps 29, 30, and 30, the same as in the second embodiment. The effect of is obtained.

(Fourth Embodiment) FIGS. 6 to 8 show a fourth embodiment of the present invention. The same parts as those of the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. Only the parts will be described. High-frequency circuit device 3 in fourth embodiment
Reference numeral 1 denotes a circuit board 2 between the circuit elements 22 and 23 and the circuit element 23 with respect to the high-frequency circuit device 21 of the first embodiment.
In this configuration, for example, a dielectric material 32 such as polyimide is disposed in the portions of the wires 9, 10, and 10 that connect between them.

FIGS. 7 and 8 show a connection state between the circuit elements 22 and 23. The dielectric material 32 covers the wires 9 and 10, and also connects the wire 9 and the wires 10 and 10.
To fill the gap existing between
And 23, each connection point Pa of the wire 9 to the signal line 5
, Pb and the portions 5 ′, 5 ′ of the signal line 5 up to the ends Ta and Tb (that is, portions where the wire 9 faces the signal line 5) (see FIG. 8).

The dielectric material 32 is used for the circuit element 22,
The stubs 24 on the reference numeral 23 are also arranged so as to cover the same. Note that the same applies to the wires 10 connecting the ground electrodes 6 and 6.
The same applies to the dielectric material 32 disposed at the connection portion between the package 4 and the package substrate 2.

The operation and effect of disposing the dielectric material 32 as described above are as follows. That is, the gap between the wire 9 and the wires 10 is filled with the dielectric material 32.
(The relative permittivity is εs), the wavelength λ of the high-frequency signal propagating through the wires 9, 10 and 10 is reduced by 1 /.
(Εs ^0.5 ) times, and wires 9 and 1
The characteristic impedance Zc of the 0 and 10 parts is
2 and 23 can be matched so as to be equivalent to the characteristic impedance Z0 of the transmission line.

By bringing the characteristic impedance Zc closer to the characteristic impedance Z0, the reflection loss and the transmission loss generated in the wires 9, 10, and 10 due to the characteristic impedance mismatch can be reduced.

As described above, the parasitic circuit component generated at the end 5 'of the signal line 5 can be regarded as an open stub whose frequency characteristic is determined by the length L of the facing portion 5'. Therefore, by filling the portion where the wire 9 and the signal line 5 face each other with the dielectric material 32, as described above, the wavelength λ of the high-frequency signal propagating through the wires 9, 10, and 10 becomes 1 / (εs ^{0 .5} ) Assuming that the effective length to be doubled is λe, the effective length λe changes and the ratio to the length L changes, so that the frequency characteristics of the open stub can be equivalently changed.

Therefore, when the stub 24 is formed as in the first embodiment and the adjustment is performed to reduce the deterioration of the transmission characteristics of the high-frequency signal due to the parasitic circuit component, the actual wires 9 and 10, 10 Even if the connection state is different from the initial expectation and the adjustment cannot be performed sufficiently as a result, the adjustment can be performed by further disposing the dielectric material 32.

As described above, according to the fourth embodiment, the dielectric material 32 is disposed between the circuit elements 22 and 23 and between the wires 9 and 10 and 10 connecting the circuit element 23 and the package substrate 2. By doing so, it is possible to perform adjustment for reducing the influence of characteristic impedance matching and deterioration of transmission characteristics due to parasitic circuit components over a wider range, and it is possible to further increase the transmission efficiency of high-frequency signals.

(Fifth Embodiment) FIGS. 9 to 11 show a fifth embodiment of the present invention. The high-frequency circuit device 33 according to the fifth embodiment is different from the high-frequency circuit device 27 according to the third embodiment in that the bumps 29, 30, and 30 connecting between the circuit elements 28 and 22a are made of a dielectric material such as polyimide. 34 are arranged.

The dielectric material 34 comprises bumps 29 and 30,
30 and fills the gaps existing between the bumps 29 and the bumps 30 and 30, and as shown in FIG. 11, each connection point Pc of the bump 29 with respect to the signal line 5 of the circuit elements 22a and 28 and Pd and one end T of the signal line 5
It is arranged so as to cover portions 5 'and 5' up to c and Td. Further, the dielectric material 34 is disposed so as to cover the stub 24a.

According to the fifth embodiment configured as described above, after the transmission characteristics are adjusted by the stub 24a as in the third embodiment, the dielectric material 3 is adjusted as in the fourth embodiment.
4, the high-frequency circuit device 33 having the circuit element 28 to be flip-chip connected is also provided.
The same effects as in the fourth embodiment can be obtained.

(Sixth Embodiment) FIG. 12 shows a sixth embodiment of the present invention. In the sixth embodiment, the wires 9 and 10, 10 are actually bonded between the circuit elements 22, 23 of the high-frequency circuit device 21 of the first embodiment, and then the stub 24 formed on the circuit element 22 is replaced with, for example, a laser. The stub 24 'is trimmed by using such a method as described above, so that the transmission characteristics of the connection portion can be further adjusted.

That is, even after completion of the high-frequency circuit device 21, as a result of the actual bonding of the wires 9, 10, 10, the transmission characteristics indicated by the portions may be different from those initially expected. In some cases, the return loss may be further increased. Therefore, by trimming the stub 24 according to the actual transmission characteristics after wire bonding, the transmission characteristics can be adjusted according to the state after completion.

(Seventh Embodiment) FIG. 13 shows a seventh embodiment of the present invention. In the seventh embodiment, a stub formed on the circuit element 22a of the high-frequency circuit device 27 of the third embodiment is shown. The stub 24a 'is subjected to trimming in the same manner as in the sixth embodiment to further adjust the transmission characteristics of the connection portion. That is, even in the high-frequency circuit device 27 in which the circuit element 28 is flip-chip connected, as a result of the actual soldering of the bumps 29, 30, and 30, the stub 24a is trimmed according to the transmission characteristics indicated by the portion. As in the sixth embodiment, the transmission characteristics can be adjusted according to the completed state.

(Eighth Embodiment) FIG. 14 shows an eighth embodiment of the present invention. In the eighth embodiment, the high-frequency circuit device 21 after the stub 24 has been trimmed and adjusted in the sixth embodiment differs from the high-frequency circuit device 21 in the same manner as in the fourth embodiment.
And a dielectric material 3 on the stub 24 '.
2 are arranged.

According to the eighth embodiment, the stub 2
The characteristic impedance of the wires 9 and 10 and 10 is matched to the characteristic impedance of the transmission line of the circuit element 23 by arranging the dielectric material 32 after reducing the reflection loss due to the parasitic circuit component by trimming 4. The transmission efficiency of the high-frequency signal can be generally improved.

(Ninth Embodiment) FIG. 15 shows a ninth embodiment of the present invention. In the ninth embodiment, the high-frequency circuit device 27 after trimming and adjusting the stub 24a in the seventh embodiment is different from the fourth embodiment in that the bumps 29, 30, and 30 and the stub 24a 'are provided. In this example, a dielectric material 34 is disposed.

According to the ninth embodiment, the high-frequency circuit device 2 in which the circuit element 28 is flip-chip connected
7, the stub 24 a is trimmed to reduce the reflection loss due to the parasitic circuit component, and then the dielectric material 42 is arranged, so that the bumps 29 and 30,
The characteristic impedance of the 30 parts can be matched with the characteristic impedance of the transmission line of the circuit element 23a,
As in the eighth embodiment, the transmission efficiency of the high-frequency signal can be generally improved.

The present invention is not limited to the embodiment described above and shown in the drawings, and the following modifications or extensions are possible. The signal line connection means and the ground electrode connection means are not limited to wires, but may be ribbons. The ground electrode connecting means may be a conductor plate. The dielectric material is not limited to polyimide but may be, for example, epoxy or silicon, and a material having a necessary relative dielectric constant may be appropriately selected. The present invention is not limited to a high frequency circuit device having a coplanar line, but may be applied to a planar type high frequency circuit device having a microstrip line or the like. When a dielectric material is disposed on the microstrip line, a portion where the signal line connecting means faces the signal line, and a portion where the signal line connecting means faces the ground electrode (also used as the package substrate). The portions may be filled with a dielectric material. In this case, ground electrode connecting means may be arranged on both sides of the signal line connecting means, and a gap between the two may be filled with a dielectric material.

For example, in the first embodiment, the circuit element 2
In the connection between 2 and 23, a stub may be formed also on the circuit element 23 side. In connection between the circuit elements 22 and 23 and the package substrate 2, a stub may be formed on the package substrate 2 side. The same applies to other embodiments. For example, in the connection between the circuit elements 22a and 28, a stub may be formed on the circuit element 28 side. When the stub 26 is provided as in the second embodiment, a dielectric material may be arranged in the same manner as in the fourth embodiment. The number of high-frequency circuit elements mounted on the package may be only one, or may be three or more.

[Brief description of the drawings]

FIG. 1 is a perspective view of a high-frequency circuit device showing a first embodiment of the present invention.

FIG. 2 is a plan view showing a connection state between circuit elements.

FIG. 3 is a view corresponding to FIG. 2, showing a second embodiment of the present invention;

FIG. 4 is a view corresponding to FIG. 1, showing a third embodiment of the present invention;

FIG. 5 is a perspective view of a part of FIG.

FIG. 6 is a view corresponding to FIG. 1, showing a fourth embodiment of the present invention;

FIG. 7 is a diagram corresponding to FIG. 2;

FIG. 8 is a sectional view showing a connection state between circuit elements.

FIG. 9 is a view corresponding to FIG. 1, showing a fifth embodiment of the present invention.

FIG. 10 is a diagram corresponding to FIG. 5;

FIG. 11 is a diagram corresponding to FIG. 8;

FIG. 12 is a view corresponding to FIG. 2, showing a sixth embodiment of the present invention;

FIG. 13 is a view corresponding to FIG. 5, showing a seventh embodiment of the present invention.

FIG. 14 is a view corresponding to FIG. 2, showing an eighth embodiment of the present invention.

FIG. 15 is a view corresponding to FIG. 5, showing a ninth embodiment of the present invention.

FIG. 16 is a diagram corresponding to FIG. 1 showing a conventional technique.

FIG. 17 is a diagram corresponding to FIG. 2;

FIG. 18 is a diagram corresponding to FIG. 8;

[Explanation of symbols]

2 is a package substrate (connection target, package), 5 is a signal line, 6 and 6 are ground electrodes, 7 is a signal line, 8, 8
Is a ground electrode, 9 is a wire (signal line connection means), 1
Reference numerals 0 and 10 are wires (ground electrode connecting means), 21 is a high-frequency circuit device, 22, 22 'and 22a are circuit elements (high-frequency circuit elements), 23 is a circuit element (connection target, high-frequency circuit element), and 24 and 24'. 24a and 24a 'are stubs, 2
5 is a high-frequency circuit device, 26 is a stub, 28 is a circuit element (connection target, high-frequency circuit element), 29 is a bump (signal line connection means), 30 and 30 are bumps (ground electrode connection means), and 31 is a high-frequency circuit device , 32 are dielectric materials, 3
Reference numeral 3 denotes a high-frequency circuit device, and reference numeral 34 denotes a dielectric material.

Claims (12)

[Claims] A high-frequency circuit element for processing a high-frequency signal; a signal line connecting means for connecting between a signal line on the high-frequency circuit element and a signal line on an external connection target; A stub for adjusting transmission characteristics formed on the signal line near a connection point with the signal line on the high-frequency circuit element. 2. The high-frequency circuit device according to claim 1, wherein a dielectric material is arranged so as to fill the signal line connecting means and a portion where the signal line connecting means and the signal line face each other. 3. The high-frequency device according to claim 1, further comprising ground electrode connecting means for connecting a ground electrode on said high-frequency circuit element to a ground electrode on said external connection target. Circuit device. 4. A space between the signal line connection means and the ground electrode connection means is filled, and a portion between the ground electrode connection means and the ground electrode connection means and the ground electrode are also filled. 4. The high-frequency circuit device according to claim 3, wherein the dielectric material is arranged as described above. 5. The high-frequency circuit device according to claim 2, wherein the dielectric material is disposed so as to cover the stub. 6. The high-frequency circuit according to claim 3, wherein said signal line connecting means is made of a wire or a ribbon, and said ground electrode connecting means is made of a wire, a ribbon or a conductor plate. apparatus. 7. The high-frequency circuit device according to claim 3, wherein the signal line connecting means and the ground electrode connecting means are constituted by bumps. 8. The high-frequency circuit device according to claim 1, wherein the external connection target is a high-frequency circuit element. 9. The high-frequency circuit device according to claim 1, wherein the external connection target is a package on which the high-frequency circuit element is mounted. 10. The high-frequency circuit device according to claim 1, wherein the transmission characteristics are adjusted by trimming the stub according to the transmission characteristics after the signal line connection unit is connected. A method for adjusting the transmission characteristics of a circuit device. 11. The transmission characteristic is adjusted by trimming the stub in the high-frequency circuit device according to claim 3 according to the transmission characteristic after the signal line connection means and the ground electrode connection means are connected. A method for adjusting transmission characteristics of a high-frequency circuit device, characterized in that: 12. The transmission characteristic adjusting method for a high-frequency circuit device according to claim 10, wherein the dielectric material according to claim 5 is disposed after trimming the stub.