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JPH1112504A - Composition for resin insulating layer onto which electroless plating is applicable and production of wiring board using the same - Google Patents

Composition for resin insulating layer onto which electroless plating is applicable and production of wiring board using the same

Info

Publication number
JPH1112504A
JPH1112504A JP17066397A JP17066397A JPH1112504A JP H1112504 A JPH1112504 A JP H1112504A JP 17066397 A JP17066397 A JP 17066397A JP 17066397 A JP17066397 A JP 17066397A JP H1112504 A JPH1112504 A JP H1112504A
Authority
JP
Japan
Prior art keywords
metal
insulating layer
composition
ligand
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17066397A
Other languages
Japanese (ja)
Other versions
JP4023873B2 (en
Inventor
Kanae Nakagawa
香苗 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17066397A priority Critical patent/JP4023873B2/en
Publication of JPH1112504A publication Critical patent/JPH1112504A/en
Application granted granted Critical
Publication of JP4023873B2 publication Critical patent/JP4023873B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Paints Or Removers (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain the subject composition useful for producing wiring board for high frequency circuit or fine electroconductive pattern, the wiring board allowing electroconductive layer to directly form on its resin insulating layer through fewer process steps, by including a polymer containing a chelate ligand of ion, etc., of the objective metal for plating. SOLUTION: This composition is obtained by introducing a chelate ligand of carboyxylic acid type represented by iminodiacetic acid or β-diketone type, which has an ability to capture either an ion of the plating metal applied onto the insulating layer or an ion (e.g. nickel, cobalt, etc., in case of copper plating) of the catalytic metal employed to accelerate precipitation of the plating metal, into a prepolymer qualified for the main component at a rate of at least one ligand to the repeating unit, and thus including the ligand. The objective composition can dispense with the burdensome roughing/catalyzing treatment preceding an electroless plating step which is indispensable to formation of buildup multilayered wiring board by the subtractive process. Also, the composition is useful for production of printed wiring board, etc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は無電解めっきを可能
にする樹脂絶縁層用組成物、及びそれを用いた配線基板
の製造方法に関する。より詳しく言えば、本発明の樹脂
絶縁層用組成物はその組成物の硬化物上に直接無電解め
っき皮膜を形成できる組成物であり、この組成物はプリ
ント配線基板、特に高周波回路用プリント配線基板や高
密度多層プリント配線基板等のための絶縁材料として特
に有用である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for a resin insulating layer which enables electroless plating, and a method for manufacturing a wiring board using the same. More specifically, the composition for a resin insulating layer of the present invention is a composition capable of forming an electroless plating film directly on a cured product of the composition, and the composition is a printed wiring board, particularly a printed wiring for a high-frequency circuit. It is particularly useful as an insulating material for substrates, high-density multilayer printed wiring boards, and the like.

【0002】[0002]

【従来の技術】例えば高密度多層プリント配線基板に
は、導体回路層と樹脂絶縁層を交互に積み上げ、内・外
装回路を接続、導通させてなるビルドアップ多層配線基
板がある。このビルドアップ配線基板のパターン形成方
法としては、現在サブトラクティブ法が主流になってい
る。このサブトラクティブ法では、銅張コア基板の銅箔
をエッチングして内装配線とし、その上に液状感光性樹
脂を塗布、乾燥し、樹脂面に接触させたマスクを介して
露光後、現像してパターンを形成し、このパターン化し
た樹脂を加熱により硬化させて樹脂絶縁層を形成してか
ら、この樹脂絶縁層の上に導体回路層を形成している。
そしてこの一連の工程を繰り返すことで、必要な数の樹
脂絶縁層及び導体回路層の積み上げを行っている。
2. Description of the Related Art For example, as a high-density multilayer printed wiring board, there is a build-up multilayer wiring board formed by alternately stacking conductive circuit layers and resin insulating layers and connecting and conducting internal and external circuits. As a pattern forming method for the build-up wiring board, a subtractive method is currently mainstream. In this subtractive method, the copper foil of the copper-clad core substrate is etched into interior wiring, a liquid photosensitive resin is applied thereon, dried, exposed through a mask in contact with the resin surface, and developed. A pattern is formed, the patterned resin is cured by heating to form a resin insulating layer, and then a conductive circuit layer is formed on the resin insulating layer.
By repeating this series of steps, the required number of resin insulating layers and conductor circuit layers are stacked.

【0003】樹脂絶縁層上に導体層を形成するのには、
通常、めっき法が用いられている。ところが、樹脂「絶
縁」層は文字通り非伝導体であるから、その上にめっき
するためには樹脂層表面を導電性にしなくてはならな
い。そしてこの樹脂層表面を導電性にする際に、触媒化
と呼ばれる手法が用いられている。
In order to form a conductor layer on a resin insulating layer,
Usually, a plating method is used. However, since the resin "insulating" layer is literally non-conductive, the surface of the resin layer must be made conductive in order to be plated thereon. When the surface of the resin layer is made conductive, a technique called catalysis is used.

【0004】樹脂層表面を触媒化するのにもっとも広く
使用される手段は、塩化錫及び塩化パラジウムを使用し
て、樹脂層表面に金属パラジウム粒子の層を形成する方
法である。この場合、まず樹脂層表面を過マンガン酸等
の酸化剤で浸食し、直径2〜5μm程度の穴を表面全体
に形成する。この処理は、樹脂層表面の「粗化」として
知られている。この粗化により形成した穴は、後にめっ
きがそこに入り込むことによりめっき皮膜が樹脂に食い
ついた状態になり(アンカー効果)、樹脂層とめっき皮
膜との密着力を強くする働きをする。次いで、この粗化
表面に、無電解めっきのための触媒となるパラジウム核
を析出させて樹脂層表面を触媒化する。こうして表面を
触媒化した樹脂層を無電解めっき液に浸漬して、薄い導
電性皮膜層を形成させる。その後、所望の厚さの導体層
を形成するために、今度は電気めっきを行って、導体層
の形成を完了する。
The most widely used means for catalyzing the surface of a resin layer is to form a layer of metal palladium particles on the surface of the resin layer using tin chloride and palladium chloride. In this case, the surface of the resin layer is first eroded with an oxidizing agent such as permanganic acid to form a hole having a diameter of about 2 to 5 μm on the entire surface. This treatment is known as "roughening" of the resin layer surface. The hole formed by the roughening is a state in which the plating film enters into the resin when the plating enters later (anchor effect), and functions to increase the adhesion between the resin layer and the plating film. Next, a palladium nucleus serving as a catalyst for electroless plating is deposited on the roughened surface to catalyze the surface of the resin layer. The resin layer whose surface has been catalyzed in this way is immersed in an electroless plating solution to form a thin conductive film layer. Thereafter, in order to form a conductor layer having a desired thickness, electroplating is performed this time to complete the formation of the conductor layer.

【0005】このような、樹脂絶縁層をめっきするため
に触媒化する方法は確立しており、だいたいにおいて好
適である。
[0005] Such a method of catalyzing the plating of a resin insulating layer has been established and is generally suitable.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、このよ
うな樹脂絶縁層を粗化・触媒化し、めっきして導体層を
形成する方法は多段階工程を必要とするのが難点であ
る。その上、このような従来の方法による場合、樹脂絶
縁層と導体層の適切な密着力を得るために必ず樹脂層表
面に2〜5μm径の穴を全面に形成しなければならず、
これは、特に信号がGHz以上と高周波信号になった場
合、抵抗として効いてきてしまうため、高周波回路にお
いては伝送線路としての導体損のもとになる。更に、樹
脂層表面に形成される穴の2〜5μmという直径は、そ
の樹脂層の上に形成する導体パターンの微細化にとって
障害となりかねない。従って、多層配線基板を安価に製
造できることで知られる従来のサブトラクティブ法は、
工程数が多くて手間がかかる上に、高周波回路用の配線
基板には適用できず、また導体パターンの微細化に適応
することもできない。
However, such a method of forming a conductive layer by roughening and catalyzing the resin insulating layer and plating the resin insulating layer is disadvantageous in that it requires a multi-step process. In addition, according to such a conventional method, a hole having a diameter of 2 to 5 μm must be formed on the entire surface of the resin layer in order to obtain an appropriate adhesion between the resin insulating layer and the conductor layer.
This becomes effective as a resistor particularly when the signal becomes a high frequency signal of GHz or more, and thus causes a conductor loss as a transmission line in a high frequency circuit. Further, the diameter of the hole formed in the resin layer surface of 2 to 5 μm may hinder the miniaturization of the conductor pattern formed on the resin layer. Therefore, the conventional subtractive method known to be able to manufacture a multilayer wiring board at low cost is as follows.
The method requires many steps and is troublesome, cannot be applied to a wiring board for a high-frequency circuit, and cannot be adapted to miniaturization of a conductor pattern.

【0007】本発明は、少ない工程で樹脂絶縁層上に導
体層を形成するのを可能にし、且つ高周波回路用配線基
板や微細な導体パターンの配線基板の製造を可能にす
る、直接の無電解めっきが可能な樹脂絶縁層用組成物を
提供すること、またその組成物を用いて配線基板を製造
する方法を提供することを目的とする。
[0007] The present invention provides a direct electroless process which enables a conductor layer to be formed on a resin insulating layer in a small number of steps, and enables the manufacture of a wiring board for a high-frequency circuit or a wiring board having a fine conductor pattern. It is an object of the present invention to provide a composition for a resin insulating layer that can be plated, and to provide a method for manufacturing a wiring board using the composition.

【0008】[0008]

【課題を解決するための手段】本発明の直接の無電解め
っきが可能な樹脂絶縁層用組成物は、形成した絶縁層上
にめっきしようとする金属のイオン、又はこのめっきし
ようとする金属の析出を促進する触媒となる金属のイオ
ンを補足する能力のあるキレート配位子を含有する高分
子化合物を含有していることを特徴とする。この組成物
は、感光性もしくは熱硬化性の組成物でよく、あるいは
感光性と熱硬化性の両方の性質を兼ね備えた組成物でも
よい。
According to the present invention, a composition for a resin insulating layer which can be directly electrolessly plated is formed of a metal ion to be plated on the formed insulating layer, or a metal of the metal to be plated. It is characterized by containing a polymer compound containing a chelate ligand capable of capturing ions of a metal which serves as a catalyst for promoting the precipitation. The composition may be a photosensitive or thermosetting composition, or may be a composition having both photosensitive and thermosetting properties.

【0009】本発明の配線基板製造方法は、被処理基板
上に樹脂材料で樹脂絶縁層を形成しそしてこの上にめっ
きにより導体回路層を形成して配線基板を製造する方法
であって、形成した絶縁層上にめっきしようとする金属
のイオン、又はこのめっきしようとする金属の析出を促
進する触媒となる金属のイオンを補足する能力のあるキ
レート配位子を含有する高分子化合物を含有している樹
脂絶縁層用組成物を用いて、被処理基板上に皮膜を形成
し、この皮膜の未硬化又は半硬化の状態で、当該皮膜表
面のキレート配位子に上記金属のイオンを補足させ、次
いで当該皮膜を硬化させて絶縁層を形成し、そしてこの
絶縁層上に無電解めっきによりめっきを析出させること
を特徴とする。
A method of manufacturing a wiring board according to the present invention is a method of manufacturing a wiring board by forming a resin insulating layer of a resin material on a substrate to be processed and forming a conductive circuit layer thereon by plating. A polymer compound containing a chelate ligand capable of capturing ions of the metal to be plated on the insulating layer formed, or ions of the metal serving as a catalyst for promoting the deposition of the metal to be plated. A film is formed on a substrate to be processed using the composition for a resin insulating layer that has been formed, and in a state where the film is in an uncured or semi-cured state, the chelate ligand on the film surface is supplemented with ions of the above metal. Then, the film is cured to form an insulating layer, and plating is deposited on the insulating layer by electroless plating.

【0010】[0010]

【発明の実施の形態】本発明の樹脂絶縁層用組成物は、
それを用いて形成した絶縁層上に直接無電解めっきによ
り所望の金属皮膜を形成するのを可能にするものであ
る。こうして無電解めっきにより形成した金属皮膜の上
には、必要な厚みのめっきを電気めっきにより析出させ
ることができる。
BEST MODE FOR CARRYING OUT THE INVENTION The composition for a resin insulating layer of the present invention comprises:
This enables a desired metal film to be formed by electroless plating directly on an insulating layer formed by using the same. Thus, a plating having a required thickness can be deposited by electroplating on the metal film formed by electroless plating.

【0011】形成した絶縁層上にめっきすべき金属のイ
オン、又はこのめっきすべき金属の析出を促進する触媒
となる金属のイオンを補足する能力のあるキレート配位
子を含有する高分子化合物は、キレート配位子が所定の
金属のイオンを補足することで、めっきすべき金属が無
電解めっきで絶縁層上に直接析出するのを可能にする。
キレート配位子がめっきすべき金属のイオンを直接補足
する場合にも、あるいはめっきすべき金属の析出を促進
する触媒となる金属のイオンを補足する場合にも、無電
解めっきの際に、めっきされる金属はキレート配位子に
補足された金属を核として析出を続け、皮膜を形成する
ことができる。従って、この高分子化合物は、絶縁層を
形成する本発明の樹脂組成物の主要成分であることが望
ましい。
A polymer compound containing a chelate ligand capable of capturing ions of a metal to be plated on the formed insulating layer or ions of a metal serving as a catalyst for promoting the deposition of the metal to be plated is The chelating ligand captures ions of a given metal, thereby enabling the metal to be plated to be deposited directly on the insulating layer by electroless plating.
Whether the chelating ligand directly captures the ions of the metal to be plated or the metal ions that act as catalysts to promote the deposition of the metal to be plated, The metal to be deposited continues to be deposited with the metal captured by the chelating ligand as a nucleus to form a film. Therefore, it is desirable that this polymer compound is a main component of the resin composition of the present invention for forming an insulating layer.

【0012】めっきに用いる金属の代表例は銅(Cu)
である。とは言え、めっきに用いる金属はもちろんこれ
に限定されるものではない。本発明では、絶縁層を形成
する組成物の主要成分である高分子化合物に、このめっ
きに用いる金属のイオンを補足する能力を有するキレー
ト配位子を含有させておくことで、絶縁層形成後に従来
のようにその表面の粗化も触媒化も行う必要なしに、絶
縁層上に無電解めっきにより直接めっきを施すことが可
能になる。
A typical example of a metal used for plating is copper (Cu).
It is. However, the metal used for plating is of course not limited to this. In the present invention, the polymer compound, which is a main component of the composition for forming the insulating layer, contains a chelate ligand having an ability to capture ions of the metal used in the plating, so that after forming the insulating layer, It is possible to perform direct plating by electroless plating on the insulating layer without having to roughen or catalyze the surface as in the related art.

【0013】絶縁層材料となる高分子化合物の種類によ
っては、それに含有させることができるキレート配位子
がめっきしようとする金属のイオンを必ずしも補足しや
すいとは限らない場合がある。このような場合には、め
っきしようとする金属の析出を促進する触媒となる金属
のイオンを補足する能力のあるキレート配位子を用いる
ことができる。めっきしようとする金属が銅の場合、そ
の析出の促進に有効な触媒となる金属イオンとして、N
2+,Co2+,Sn2+,Pd2+,Ag+ ,Au + などを
挙げることができる。
[0013] Depending on the type of the polymer compound used as the insulating layer material,
Is a chelating ligand that can be contained in it
Does not necessarily supplement the ions of the metal
Not always. In such a case,
A metal that acts as a catalyst to promote the deposition of the metal to be plated
Use a chelating ligand capable of capturing the ions
be able to. If the metal to be plated is copper,
As metal ions serving as effective catalysts for promoting the precipitation of
i2+, Co2+, Sn2+, Pd2+, Ag+, Au +Etc.
Can be mentioned.

【0014】キレート配位子としては、めっきする金属
のイオン、もしくは触媒となる金属のイオンを捕捉する
能力が必要とされるが、更に、絶縁材料としての樹脂の
特性、例えば耐薬品性、耐熱性、あるいは絶縁層のパタ
ーン化のための解像性等をできるだけ損なわないもので
なければならない。例として、アルカリ性水溶液での現
像が可能な組成物について言えば、イミノ二酢酸に代表
されるようなカルボン酸型、アゾ型、ポリアミン又はポ
リイミン型、アルコール性又はフェノール性のヒドロキ
シル型、β−ジケトン型などの配位子が親水性であり、
適切であると考えられる。言うまでもなく、高分子化合
物に導入し得る配位子はこれらに限定されるものではな
い。
The chelating ligand is required to have the ability to capture ions of a metal to be plated or ions of a metal serving as a catalyst, and further have the properties of a resin as an insulating material, such as chemical resistance and heat resistance. It must be as small as possible to the extent possible, or the resolution for patterning the insulating layer. As an example, for a composition that can be developed with an alkaline aqueous solution, carboxylic acid type represented by iminodiacetic acid, azo type, polyamine or polyimine type, alcoholic or phenolic hydroxyl type, β-diketone Ligands such as types are hydrophilic,
Deemed appropriate. Needless to say, ligands that can be introduced into the polymer compound are not limited to these.

【0015】先に説明したように、キレート配位子は組
成物の主要成分である高分子化合物に導入するのが望ま
しく、より具体的に言えば本発明の組成物の主要成分で
あるプレポリマーに導入するので適当である。主要成分
のプレポリマーに導入するのが困難であるか、もしくは
導入により樹脂の特性が著しく損なわれるおそれのある
場合は、他のポリマー成分のプレポリマーに導入したも
のを用いてもよい。キレート配位子を導入したプレポリ
マーは、その繰り返し単位に少なくとも1つのキレート
配位子を含有していることが望ましい。キレート配位子
を導入したコポリマーの使用も可能であり、この場合
は、キレート配位子は複数の構成繰り返し単位のうちの
少なくとも一つに導入される。
As described above, the chelating ligand is desirably introduced into the polymer compound which is the main component of the composition, and more specifically, the prepolymer which is the main component of the composition of the present invention. It is appropriate because it is introduced to When it is difficult to introduce into the prepolymer of the main component or there is a possibility that the properties of the resin may be significantly impaired by the introduction, a prepolymer of another polymer component may be used. The prepolymer into which the chelating ligand has been introduced desirably contains at least one chelating ligand in its repeating unit. It is also possible to use a copolymer into which a chelating ligand has been introduced, in which case the chelating ligand is introduced into at least one of the plurality of constitutional repeating units.

【0016】本発明の組成物は、上述のキレート配位子
を含有した高分子化合物(プレポリマー)のほかに、そ
の硬化を促進する硬化剤や、硬化反応を開始させるため
の重合開始剤等を始めとして、被処理基板上に絶縁層を
形成するのに使用される樹脂組成物において一般に用い
られるこのほかの成分を随意に含有することができる。
絶縁層を形成するのに用いられる高分子化合物も、硬化
剤、開始剤やその他の成分も、当該技術の分野において
広く知られたものであり、それらについてここで詳しく
説明するには及ばない。
The composition of the present invention comprises, in addition to the above-mentioned polymer compound (prepolymer) containing a chelating ligand, a curing agent for accelerating the curing, a polymerization initiator for initiating the curing reaction, and the like. And other components generally used in a resin composition used to form an insulating layer on a substrate to be processed.
The polymeric compounds used to form the insulating layer, as well as the curing agents, initiators and other components are well known in the art and need not be described at length here.

【0017】本発明の組成物を使って被処理基板上に形
成した皮膜表面のキレート配位子に金属イオンを補足さ
せるのは、組成物に含まれる樹脂成分の高分子化合物が
完全に硬化する以前に、すなわち形成した皮膜が未硬化
又は半硬化の状態にある間に、行わなくてはならない。
と言うのは、形成した皮膜の光あるいは熱による架橋、
重合反応が進むに従って、皮膜表面のキレート配位子へ
の金属イオンの吸着量は著しく減少してしまうためであ
る。
The metal ions are captured by the chelating ligand on the surface of the film formed on the substrate to be treated using the composition of the present invention, because the polymer compound of the resin component contained in the composition is completely cured. It must be done before, ie while the formed coating is in an uncured or semi-cured state.
The reason is that the formed film is cross-linked by light or heat,
This is because, as the polymerization reaction proceeds, the amount of metal ions adsorbed to the chelating ligand on the film surface is significantly reduced.

【0018】従って、キレート配位子への金属イオンの
捕捉(錯形成)は、本発明の樹脂絶縁層用組成物の形態
が液状で溶剤型の場合には、組成物を基材(被処理基
板)上に塗布し、溶剤を除去することを目的とした乾燥
後、もしくは露光・現像によるパターン形成後に行うこ
とが必要であり、組成物が液状で非溶剤型の場合には、
基材上に塗布後、もしくは露光・現像によるパターン形
成後に行うことが必要であり、そして組成物がドライフ
ィルムの場合には、基材上にラミネート後、もしくは露
光・現像によるパターン形成後に行うことが必要であ
る。このとき、樹脂組成物の硬化(液状の場合において
は主として熱硬化、ドライフィルムの場合は主として光
硬化)はある程度まで進んでいることを妨げるものでは
ないが、皮膜表面における硬化の程度はいずれの場合も
50%以下であるのが好ましい。
Therefore, the capture (complex formation) of metal ions to the chelate ligand can be carried out by using the composition for a resin insulating layer of the present invention in the case of a liquid solvent-type composition. It is necessary to apply after drying for the purpose of coating on the substrate) and removing the solvent, or after forming a pattern by exposure and development, and when the composition is a liquid and non-solvent type,
It must be performed after application on the substrate or after pattern formation by exposure and development, and when the composition is a dry film, after lamination on the substrate or after pattern formation by exposure and development is necessary. At this time, the curing of the resin composition (mainly heat curing in the case of a liquid state, mainly light curing in the case of a dry film) does not prevent progress to some extent, but the degree of curing on the film surface is not limited. In this case, it is preferable that the content is 50% or less.

【0019】被処理基板上に形成した皮膜表面に金属イ
オンを吸着せしめてキレート配位子に金属イオンを捕捉
させるのには、どのような方法を採用してもよい。一般
的には、目的の金属イオンが溶解し、キレート結合を形
成するために適したpHに調整した水溶液に、皮膜を形
成した被処理基板を錯平衡に達するまで浸漬する。浸漬
する時間は高分子化合物が含有しているキレート配位
子、皮膜表面の硬化程度で違いがあるが、一般には数分
〜数十分である。
Any method may be employed to cause metal ions to be adsorbed on the surface of the film formed on the substrate to be treated and to be captured by the chelating ligand. Generally, the target substrate on which a film is formed is immersed in an aqueous solution adjusted to a pH suitable for forming a chelate bond by dissolving a target metal ion until the complex equilibrium is reached. The immersion time varies depending on the chelate ligand contained in the polymer compound and the degree of curing of the film surface, but is generally several minutes to several tens of minutes.

【0020】皮膜表面が、キレート結合を形成すること
により、無電解めっきする金属のイオン、もしくは触媒
となる金属イオンを捕捉した後は、皮膜を光又は熱によ
り十分に硬化させた後に、通常の無電解めっき浴によ
り、導電性皮膜層を形成することができる。絶縁層表面
に錯形成して捕捉された金属を核として成長するめっき
膜は、絶縁層に対する密着力が十分強いため、絶縁層表
面の粗化・触媒化を必要とすることなく十分な密着性を
備えた無電解めっき膜を形成することが可能になる。こ
うして無電解めっきにより導電性被膜層を形成後は、通
常の電気めっきにより所望の厚さの導体膜を容易に形成
することができる。
After the surface of the film captures ions of the metal to be electrolessly plated or a metal ion serving as a catalyst by forming a chelate bond, after the film is sufficiently cured by light or heat, it is subjected to an ordinary method. A conductive film layer can be formed by the electroless plating bath. A plating film that grows with the metal trapped as a complex on the surface of the insulating layer has a sufficiently strong adhesion to the insulating layer, and therefore has sufficient adhesion without the need for roughening and catalyzing the surface of the insulating layer. It becomes possible to form an electroless plating film provided with. After forming the conductive film layer by electroless plating in this manner, a conductor film having a desired thickness can be easily formed by ordinary electroplating.

【0021】このように、本発明によれば、樹脂絶縁層
表面の粗化・触媒化処理を省いて、絶縁層上に直接無電
解めっきにより金属被膜を形成することができるため、
高周波回路用配線基板や、導体パターンの微細な配線基
板の製造が可能になる。とは言え、本発明を適用して製
造できる配線基板はそれらに限定されず、樹脂絶縁層の
形成とめっきによる導体層の形成を伴う方法で製造され
る、例えばプリント配線基板やマザーボード等を含め
た、あらゆる配線基板が対象となる。
As described above, according to the present invention, a metal film can be formed directly on an insulating layer by electroless plating without roughening and catalyzing the surface of the resin insulating layer.
It is possible to manufacture a wiring board for a high-frequency circuit or a wiring board with a fine conductor pattern. However, wiring boards that can be manufactured by applying the present invention are not limited thereto, and are manufactured by a method involving formation of a resin insulating layer and formation of a conductor layer by plating, including, for example, printed wiring boards and motherboards. In addition, any wiring board is a target.

【0022】[0022]

【実施例】次に、本発明を更に具体的に説明するために
実施例を挙げる。なお、本発明はこれに限定されるもの
ではない。これらの実施例では、ビルドアップ用感光性
絶縁材料に対し本発明の適用を試みた。
EXAMPLES Next, examples will be given to explain the present invention more specifically. Note that the present invention is not limited to this. In these examples, the present invention was applied to a photosensitive insulating material for build-up.

【0023】〔実施例1〕イミノ二酢酸基を繰返し単位
当たり1基含有したノボラック型フェノール樹脂(この
樹脂は関東化学社より入手した)を50重量部、クレゾ
ールノボラック型エポキシ樹脂(東都化成社製)を30
重量部、ペンタエリスリトールテトラアクリレート(光
開始剤)を20重量部、イルガキュア907(チバガイ
ギー社製の硬化剤)を2重量部、トリフェニルホスフィ
ン(熱重合開始剤)を1重量部、エチルセロブアセテー
ト(希釈剤)を10重量部、そしてシアニングリーン
(着色剤)を1重量部、それぞれ秤量して、ロールミル
で混練してビルドアップ用絶縁材組成物を調製した。次
いで、これを銅箔上にブレードコートにより30μmの
厚さに塗布して皮膜を形成した。
Example 1 50 parts by weight of a novolak type phenol resin containing one iminodiacetate group per repeating unit (this resin was obtained from Kanto Chemical Co., Ltd.), and a cresol novolak type epoxy resin (manufactured by Toto Kasei Co., Ltd.) ) To 30
Parts by weight, 20 parts by weight of pentaerythritol tetraacrylate (photoinitiator), 2 parts by weight of Irgacure 907 (curing agent manufactured by Ciba Geigy), 1 part by weight of triphenylphosphine (thermal polymerization initiator), and ethyl celloacetate 10 parts by weight of (diluent) and 1 part by weight of cyanine green (colorant) were weighed and kneaded by a roll mill to prepare a build-up insulating material composition. Next, this was applied to a thickness of 30 μm on a copper foil by blade coating to form a film.

【0024】その後、皮膜を80℃で20分乾燥し、波
長365nmでの光強度が50mW/cm2 の紫外線を
所望のパターンで30秒間露光して、皮膜を半硬化させ
た。この処理を概念的に説明する図を図1に示す。次い
で液温30℃の2%炭酸ナトリウム水溶液でスプレー現
像(圧1kg/cm2 、60秒間)した。こうしてパタ
ーン化した皮膜を、1mol/lのCu2+イオンを含有
するpH約5.5の水溶液に1時間浸漬して表面のキレ
ート配位子にCu2+イオンを捕捉させ、そして更にこの
皮膜表面に上記の紫外線を1000mJ照射して光硬化
させた。この処理を概念的に説明する図を図2に示す。
続いて、皮膜を180℃で1時間加熱硬化させて、絶縁
層を形成した。この処理を概念的に説明する図を図3に
示す。
Thereafter, the film was dried at 80 ° C. for 20 minutes, and exposed to ultraviolet light having a light intensity of 365 mW / cm 2 at a wavelength of 365 nm in a desired pattern for 30 seconds to semi-cure the film. FIG. 1 is a diagram conceptually illustrating this processing. Subsequently, spray development (pressure 1 kg / cm 2 , 60 seconds) was performed with a 2% aqueous solution of sodium carbonate at a liquid temperature of 30 ° C. The thus patterned film is immersed in an aqueous solution containing 1 mol / l of Cu 2+ ions at a pH of about 5.5 for 1 hour to allow the chelating ligand on the surface to capture the Cu 2+ ions, and furthermore, The surface was irradiated with the above-mentioned ultraviolet ray at 1000 mJ to be photo-cured. FIG. 2 is a diagram conceptually illustrating this processing.
Subsequently, the film was heated and cured at 180 ° C. for 1 hour to form an insulating layer. FIG. 3 is a diagram conceptually illustrating this processing.

【0025】こうして絶縁層を形成した銅箔を、その後
シプレイ社製クリーナーコンディショナー211溶液
(45℃)に5分浸漬して脱脂処理を行い、同社製無電
解銅めっき液キューポジットカッパーミックス328L
に室温で30分浸漬したところ、銅めっき膜の形成が確
認された。
The copper foil having the insulating layer thus formed is immersed in a cleaner conditioner 211 solution (45 ° C.) manufactured by Shipley Co., Ltd. for 5 minutes to perform a degreasing treatment, and 328 L of an electroless copper plating solution cupposit copper mix manufactured by the company.
When immersed in the solution for 30 minutes at room temperature, formation of a copper plating film was confirmed.

【0026】〔実施例2〕実施例1で用いたノボラック
型フェノール樹脂に導入したキレート配位子をβ−ジケ
トン型のもの(このキレート配位子を導入した樹脂も関
東化学社より入手した)に代えたことを除き、実施例1
を繰返したところ、同様に銅めっき膜の形成が認められ
た。
[Example 2] The chelating ligand introduced into the novolak type phenolic resin used in Example 1 was of the β-diketone type (the resin incorporating the chelating ligand was also obtained from Kanto Chemical Co.) Example 1 except that
Was repeated, formation of a copper plating film was similarly observed.

【0027】[0027]

【発明の効果】以上説明したように、本発明の組成物を
用いれば、従来のサブトラクティブ法において不可欠で
あった無電解めっきに先立つ煩雑な粗化・触媒化処理を
省いて、絶縁層上に直接無電解めっきにより金属被膜を
形成することが可能になる。また、このように絶縁層表
面の粗化を省くことにより、高周波回路用配線基板や、
導体パターンの微細な配線基板の製造が可能になる。
As described above, when the composition of the present invention is used, a complicated roughening / catalyzing treatment prior to the electroless plating, which is indispensable in the conventional subtractive method, can be omitted and the insulating layer can be formed on the insulating layer. It is possible to form a metal film directly by electroless plating. In addition, by omitting the roughening of the insulating layer surface in this way, a wiring board for a high-frequency circuit,
It is possible to manufacture a wiring board having a fine conductor pattern.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例1の処理を概念的に説明する第一の図で
ある。
FIG. 1 is a first diagram conceptually illustrating a process according to a first embodiment.

【図2】実施例1の処理を概念的に説明する第二の図で
ある。
FIG. 2 is a second diagram conceptually illustrating the processing of the first embodiment.

【図3】実施例1の処理を概念的に説明する第三の図で
ある。
FIG. 3 is a third diagram conceptually illustrating the processing of the first embodiment.

フロントページの続き (51)Int.Cl.6 識別記号 FI H05K 3/18 H05K 3/18 E B Continued on the front page (51) Int.Cl. 6 Identification code FI H05K 3/18 H05K 3/18 EB

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 形成した絶縁層上にめっきしようとする
金属のイオン、又はこのめっきしようとする金属の析出
を促進する触媒となる金属のイオンを補足する能力のあ
るキレート配位子を含有する高分子化合物を含有してい
ることを特徴とする樹脂絶縁層用組成物。
1. A chelating ligand capable of capturing ions of a metal to be plated on a formed insulating layer or ions of a metal serving as a catalyst for promoting the deposition of the metal to be plated. A composition for a resin insulating layer, comprising a polymer compound.
【請求項2】 感光性もしくは熱硬化性の組成物、ある
いは感光性と熱硬化性の両方の性質を兼ね備えた組成物
である、請求項1記載の組成物。
2. The composition according to claim 1, which is a photosensitive or thermosetting composition, or a composition having both photosensitive and thermosetting properties.
【請求項3】 前記めっきしようとする金属が銅であ
る、請求項1又は2記載の組成物。
3. The composition according to claim 1, wherein the metal to be plated is copper.
【請求項4】 前記めっきしようとする金属の析出を促
進する触媒となる金属がニッケル、コバルト、錫、パラ
ジウム、銀又は金である、請求項3記載の組成物。
4. The composition according to claim 3, wherein the metal serving as a catalyst for accelerating the deposition of the metal to be plated is nickel, cobalt, tin, palladium, silver or gold.
【請求項5】 前記キレート配位子がカルボン酸型、ア
ゾ型、ポリアミン型、ポリイミン型、アルコール性もし
くはフェノール性のヒドロキシル型、又はβ−ジケトン
型の配位子である、請求項1から4までのいずれか一つ
に記載の組成物。
5. The chelating ligand according to claim 1, wherein the chelating ligand is a carboxylic acid type, azo type, polyamine type, polyimine type, alcoholic or phenolic hydroxyl type, or β-diketone type ligand. The composition according to any one of the preceding claims.
【請求項6】 被処理基板上に樹脂材料で樹脂絶縁層を
形成しそしてこの上にめっきにより導体回路層を形成し
て配線基板を製造する方法であって、形成した絶縁層上
にめっきしようとする金属のイオン、又はこのめっきし
ようとする金属の析出を促進する触媒となる金属のイオ
ンを補足する能力のあるキレート配位子を含有する高分
子化合物を含有している樹脂絶縁層用組成物を用いて、
被処理基板上に皮膜を形成し、この皮膜の未硬化又は半
硬化の状態で、当該皮膜表面のキレート配位子に上記金
属のイオンを補足させ、次いで当該皮膜を硬化させて絶
縁層を形成し、そしてこの絶縁層上に無電解めっきによ
りめっきを析出させることを特徴とする配線基板製造方
法。
6. A method of manufacturing a wiring board by forming a resin insulating layer with a resin material on a substrate to be processed and forming a conductive circuit layer by plating on the resin insulating layer, wherein the plating is performed on the formed insulating layer. Composition for a resin insulation layer containing a polymer compound containing a chelate ligand capable of capturing ions of a metal to be formed or a metal ion serving as a catalyst for promoting the deposition of the metal to be plated Using things
A film is formed on a substrate to be processed, and in a state where the film is in an uncured or semi-cured state, the chelate ligand on the film surface is trapped by ions of the above metal, and then the film is cured to form an insulating layer. And depositing plating on the insulating layer by electroless plating.
【請求項7】 前記皮膜の硬化を光と熱の一方又は両方
の作用による架橋及び重合により行う、請求項6記載の
方法。
7. The method according to claim 6, wherein the curing of the film is performed by crosslinking and polymerization by one or both of light and heat.
【請求項8】 前記めっきしようとする金属が銅であ
る、請求項6又は7記載の方法。
8. The method according to claim 6, wherein the metal to be plated is copper.
【請求項9】 前記めっきしようとする金属の析出を促
進する触媒となる金属がニッケル、コバルト、錫、パラ
ジウム、銀又は金である、請求項8記載の方法。
9. The method according to claim 8, wherein the metal serving as a catalyst for promoting the deposition of the metal to be plated is nickel, cobalt, tin, palladium, silver or gold.
【請求項10】 前記キレート配位子がカルボン酸型、
アゾ型、ポリアミン型、ポリイミン型、アルコール性も
しくはフェノール性のヒドロキシル型、又はβ−ジケト
ン型の配位子である、請求項6から9までのいずれか一
つに記載の方法。
10. The chelating ligand is a carboxylic acid type,
The method according to any one of claims 6 to 9, wherein the ligand is a ligand of an azo type, a polyamine type, a polyimine type, an alcoholic or phenolic hydroxyl type, or a β-diketone type.
JP17066397A 1997-06-26 1997-06-26 Composition for resin insulating layer capable of electroless plating and method for producing wiring board using the same Expired - Fee Related JP4023873B2 (en)

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JP17066397A JP4023873B2 (en) 1997-06-26 1997-06-26 Composition for resin insulating layer capable of electroless plating and method for producing wiring board using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17066397A JP4023873B2 (en) 1997-06-26 1997-06-26 Composition for resin insulating layer capable of electroless plating and method for producing wiring board using the same

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Publication Number Publication Date
JPH1112504A true JPH1112504A (en) 1999-01-19
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