JPH1112442A - Sealing resin composition and sealed semiconductor device - Google Patents
Sealing resin composition and sealed semiconductor deviceInfo
- Publication number
- JPH1112442A JPH1112442A JP18184797A JP18184797A JPH1112442A JP H1112442 A JPH1112442 A JP H1112442A JP 18184797 A JP18184797 A JP 18184797A JP 18184797 A JP18184797 A JP 18184797A JP H1112442 A JPH1112442 A JP H1112442A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- dithiodimorpholine
- resin
- semiconductor device
- inorganic filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、PdやPd−Au
等のプレプレーティングを施したフレームを用いた半導
体パッケージにおいて耐リフロークラック性等の信頼性
に優れたエポキシ樹脂組成物および半導体封止装置に関
する。TECHNICAL FIELD The present invention relates to Pd and Pd-Au
The present invention relates to an epoxy resin composition excellent in reliability such as reflow crack resistance in a semiconductor package using a frame subjected to pre-plating and the like, and a semiconductor sealing device.
【0002】[0002]
【従来の技術】最近の半導体装置では、半田メッキに換
えて、PdやPd−Au等のプレプレーティングを施し
たフレームを採用した半導体パッケージが増加してい
る。2. Description of the Related Art In recent semiconductor devices, the number of semiconductor packages employing a frame plated with Pd or Pd-Au instead of solder plating is increasing.
【0003】従来のエポキシ樹脂、ノボラック型フェノ
ール樹脂及び無機質充填剤からなる樹脂組成物によって
封止したPdやPd−Au等のプレプレーティングフレ
ームを採用した半導体装置は、インサートと封止樹脂の
接着性が著しく悪いという欠点があった。特に吸湿した
その半導体装置を表面実装すると、封止樹脂とリードフ
レーム、あるいは封止樹脂と半導体チップとの間の剥が
れが生じて著しい耐湿劣化を起こし、電極の腐食による
断線や水分によるリーク電流を生じ、その結果、半導体
装置は、長期間の信頼性を保証することができないとい
う欠点があった。このため、耐リフロー性に優れ、耐湿
性の影響が少なく、耐湿劣化の少ない成形性のよい材料
の開発が強く要望されていた。[0003] A conventional semiconductor device employing a pre-plating frame of Pd or Pd-Au sealed with a resin composition comprising an epoxy resin, a novolak-type phenol resin and an inorganic filler has a problem in that an insert and a sealing resin are bonded. There was a drawback that the properties were extremely poor. In particular, when the semiconductor device that has absorbed moisture is surface-mounted, peeling occurs between the sealing resin and the lead frame or between the sealing resin and the semiconductor chip, causing significant moisture resistance deterioration, disconnection due to electrode corrosion, and leakage current due to moisture. As a result, the semiconductor device has a drawback that long-term reliability cannot be guaranteed. For this reason, there has been a strong demand for the development of a material having excellent reflow resistance, less influence of moisture resistance, and less mold deterioration with good moldability.
【0004】[0004]
【発明が解決しようとする課題】本発明は、上記の欠点
を解消し、上記要望に応えるためになされたもので、P
dやPd−Au等のプレプレーティングフレームとの接
着性が高く、特に耐リフロー性とリフロー後の信頼性に
優れた、成形性のよい、封止用樹脂組成物および半導体
封止装置を提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and to meet the above-mentioned demands.
The present invention provides a sealing resin composition and a semiconductor sealing device having high adhesiveness to a pre-plating frame such as d or Pd-Au, and particularly having excellent reflow resistance and reliability after reflow, and having good moldability. What you want to do.
【0005】[0005]
【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、樹脂組成物に4,
4-ジチオジモルホリンを配合することによって、Pdや
Pd−Au等のプレプレーティングフレームとの接着性
を大幅に向上し、上記目的が達成されることを見いだ
し、本発明を完成したものである。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, have been able to obtain 4,4
By blending 4-dithiodimorpholine, the adhesiveness with a pre-plating frame such as Pd or Pd-Au has been greatly improved, and it has been found that the above-mentioned object has been achieved, thereby completing the present invention. .
【0006】即ち、本発明は、(A)エポキシ樹脂、
(B)ノボラック型フェノール樹脂、(C)4,4-ジチオ
ジモルホリンおよび(D)無機質充填剤を必須成分と
し、樹脂組成物に対して、前記(C)の4,4-ジチオジモ
ルホリンを0.001 〜0.1 重量%、また前記(D)の無機
質充填剤を25〜95重量%の割合で含有してなることを特
徴とする封止用樹脂組成物であり、またこの封止用樹脂
組成物の硬化物によって、Pd若しくはPd−Auのプ
レプレーティングを施したフレームに搭載された半導体
チップを封止してなることを特徴とする半導体封止装置
である。That is, the present invention provides (A) an epoxy resin,
(B) Novolak-type phenol resin, (C) 4,4-dithiodimorpholine and (D) an inorganic filler are essential components, and 4,4-dithiodimorpholine of (C) is added to the resin composition. A sealing resin composition comprising 0.001 to 0.1% by weight and the inorganic filler (D) in a ratio of 25 to 95% by weight, and the sealing resin composition. A semiconductor chip mounted on a frame on which Pd or Pd-Au has been pre-plated with a cured product of the above.
【0007】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
【0008】本発明に用いる(A)エポキシ樹脂として
は、その分子中にエポキシ基を少なくとも2 個有する化
合物である限り、分子構造、分子量など特に制限はな
く、一般に封止用材料として使用されているものを広く
包含することができる。例えば、ビフェニル型、ビスフ
ェノール型の芳香族系、シクロヘキサン誘導体等脂肪族
系、また、次の一般式で示されるエポキシノボラック系
のエポキシ樹脂等が挙げられる。The epoxy resin (A) used in the present invention is not particularly limited in molecular structure and molecular weight, as long as it is a compound having at least two epoxy groups in the molecule, and is generally used as a sealing material. Can be widely encompassed. For example, biphenyl type, bisphenol type aromatic type, aliphatic type such as cyclohexane derivative, and epoxy novolak type epoxy resin represented by the following general formula can be used.
【0009】[0009]
【化1】 (但し、式中、R1 は水素原子、ハロゲン原子又はアル
キル基を、R2 は水素原子又はアルキル基を、nは1 以
上の整数をそれぞれ表す)これらのエポキシ樹脂は、単
独もしくは2 種以上混合して用いることができる。本発
明に用いる(B)ノボラック型フェノール樹脂として
は、フェノール、アルキルフェノール等のフェノール類
とホルムアルデヒド、パラホルムアルデヒド等のアルデ
ヒド類とを反応させて得られるノボラック型フェノール
樹脂およびこれらの変性樹脂、例えばエポキシ化もしく
はブチル化したノボラック型フェノール樹脂等が挙げら
れ、これらの樹脂は、単独もしくは2 種以上混合して用
いる。ノボラック型フェノール樹脂の配合割合は、前述
したエポキシ樹脂のエポキシ基(a)とノボラック型フ
ェノール樹脂のフェノール性水酸基(b)との当量比
[(a)/(b)]が0.1 〜10の範囲内であることが望
ましい。当量比が0.1 未満もしくは10を超えると、耐熱
性、耐湿性、成形作業性および硬化物の電気特性が悪く
なり、いずれの場合も好ましくない。従って上記の範囲
内に限定するのが良い。Embedded image (In the formula, R 1 represents a hydrogen atom, a halogen atom or an alkyl group, R 2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. They can be used in combination. As the novolak type phenol resin (B) used in the present invention, novolak type phenol resins obtained by reacting phenols such as phenol and alkylphenol with aldehydes such as formaldehyde and paraformaldehyde, and modified resins thereof, for example, epoxidation Alternatively, a butylated novolak type phenol resin may be used, and these resins may be used alone or in combination of two or more. The mixing ratio of the novolak type phenol resin is such that the equivalent ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin to the phenolic hydroxyl group (b) of the novolak type phenol resin is in the range of 0.1 to 10. It is desirable to be within. If the equivalent ratio is less than 0.1 or more than 10, heat resistance, moisture resistance, molding workability, and electrical properties of the cured product are deteriorated, and any case is not preferable. Therefore, it is better to limit to the above range.
【0010】本発明に用いる(C)4,4-ジチオジモルホ
リンは、次の構造式に示されるものである。The (C) 4,4-dithiodimorpholine used in the present invention is represented by the following structural formula.
【0011】[0011]
【化2】 Embedded image
【0012】4,4-ジチオジモルホリンの配合割合は、全
体の樹脂組成物に対して0.001 〜0.1 重量%含有するこ
とが望ましい。この割合が0.001 重量%未満では、Pd
やPd−Au等のプレプレーティングフレームとの接着
力の向上に効果なく、また、0.1 重量%を超えると、封
止樹脂の硬化等に悪影響を与え、実用に適さず好ましく
ない。The compounding ratio of 4,4-dithiodimorpholine is desirably 0.001 to 0.1% by weight based on the whole resin composition. If this ratio is less than 0.001% by weight, Pd
It has no effect on improving the adhesive strength with a pre-plating frame such as Pd-Au or Pd-Au, and if it exceeds 0.1% by weight, it adversely affects the curing of the sealing resin and is not suitable for practical use and is not preferable.
【0013】本発明に用いる(D)無機質充填剤として
は、シリカ粉末、アルミナ粉末、三酸化アンチモン、タ
ルク、炭酸カルシウム、チタンホワイト、クレー、マイ
カ、ベンガラ、ガラス繊維等が挙げられ、これらは単独
又は2 種以上混合して使用することができる。これらの
中でも特にシリカ粉末とアルミナ粉末が好ましく、よく
使用される。無機質充填剤の配合割合は、全体の樹脂組
成物に対して25〜95重量%の割合で含有することが望ま
しい。その割合が25重量%未満では、耐熱性、耐湿性、
半田耐熱性、機械的特性および成形性が悪くなり、ま
た、95重量%を超えるとカサバリが大きくなり、成形性
に劣り実用に適さない。The inorganic filler (D) used in the present invention includes silica powder, alumina powder, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide, glass fiber and the like. Alternatively, two or more kinds can be used in combination. Among these, silica powder and alumina powder are particularly preferable and are often used. The inorganic filler is desirably contained in a proportion of 25 to 95% by weight based on the whole resin composition. If the proportion is less than 25% by weight, heat resistance, moisture resistance,
Solder heat resistance, mechanical properties, and moldability deteriorate, and if it exceeds 95% by weight, burrs increase, resulting in poor moldability and not suitable for practical use.
【0014】本発明の封止用樹脂組成物は、エポキシ樹
脂、ノボラック型フェノール樹脂、4,4-ジチオジモルホ
リンおよび無機質充填剤を必須成分とするが、本発明の
目的に反しない限度において、また必要に応じて、例え
ば天然ワックス類、合成ワックス類、直鎖脂肪酸の金属
塩、酸アミド類、エステル類、パラフィン類等の離型
剤、塩素化パラフィン、ブロム化トルエン、ヘキサブロ
ムベンゼン、三酸化アンチモン等の難燃剤、カーボンブ
ラック、ベンガラ等の着色剤、種々の硬化促進剤等を適
宜、添加配合することができる。The encapsulating resin composition of the present invention comprises an epoxy resin, a novolak type phenol resin, 4,4-dithiodimorpholine and an inorganic filler as essential components. If necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, release agents such as acid amides, esters, paraffins, chlorinated paraffins, brominated toluene, hexabromobenzene, Flame retardants such as antimony oxide, coloring agents such as carbon black and red iron, various curing accelerators, and the like can be appropriately added and blended.
【0015】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的な方法としては、エポキシ樹
脂、ノボラック型フェノール樹脂、4,4-ジチオジモルホ
リン、無機質充填剤およびその他の成分を配合し、ミキ
サー等によって十分均一に混合した後、さらに熱ロール
による溶融混合処理又はニーダ等による混合処理を行
い、次いで冷却固化させ、適当な大きさに粉砕して成形
材料とすることができる。こうして得られた成形材料
は、半導体装置をはじめとする電子部品あるいは電気部
品の封止、被覆、絶縁等に適用すれば、優れた特性と信
頼性を付与させることができる。A general method for preparing the encapsulating resin composition of the present invention as a molding material includes epoxy resin, novolak type phenol resin, 4,4-dithiodimorpholine, inorganic filler and other components. Is mixed sufficiently by a mixer or the like, and then further subjected to a melt-mixing process using a hot roll or a mixing process using a kneader or the like, and then cooled and solidified, and pulverized to an appropriate size to obtain a molding material. . If the molding material thus obtained is applied to sealing, coating, insulating, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.
【0016】本発明の半導体封止装置は、上記のように
して得られた封止用樹脂を用いて、半導体チップを封止
することにより容易に製造することができる。封止の最
も一般的な方法としては、低圧トランスファー成形法が
あるが、射出成形、圧縮成形、注型等による封止も可能
である。封止用樹脂組成物を封止の際に加熱して硬化さ
せ、最終的にはこの組成物の硬化物によって封止された
半導体封止装置が得られる。加熱による硬化は、150 ℃
以上に加熱して硬化させることが望ましい。封止を行う
半導体装置としては、例えば集積回路、大規模集積回
路、トランジスタ、サイリスタ、ダイオード等で特に限
定されるものではない。The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the sealing resin obtained as described above. The most common sealing method is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. 150 ° C for curing by heating
It is desirable to cure by heating as described above. The semiconductor device for sealing is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like.
【0017】[0017]
【作用】本発明の封止用樹脂組成物および半導体封止装
置は、樹脂成分として4,4-ジチオジモルホリンを用いた
ことによって、目的とする特性が得られるものである。
即ち、PdやPd−Au等のプレプレーティングフレー
ムとの接着力を向上させ、表面実装後のインサートと封
止樹脂との接着性の劣化を防止することができ、長期の
信頼性を保証することができた。The resin composition for encapsulation and the semiconductor encapsulation device of the present invention can obtain desired properties by using 4,4-dithiodimorpholine as a resin component.
That is, it is possible to improve the adhesive strength with a pre-plating frame such as Pd or Pd-Au, prevent deterioration of the adhesiveness between the insert and the sealing resin after surface mounting, and guarantee long-term reliability. I was able to.
【0018】[0018]
【発明の実施の形態】次に本発明を実施例によって説明
するが、本発明はこれらの実施例によって限定されるも
のではない。以下の実施例及び比較例において「%」と
は「重量%」を意味する。Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “%” means “% by weight”.
【0019】実施例1 クレゾールノボラックエポキシ樹脂(エポキシ当量195
)12.5%に、ノボラック型フェノール樹脂(フェノー
ル当量104 )6.7 %、次の化3に示した4,4-ジチオジモ
ルホリン0.01%、Example 1 Cresol novolak epoxy resin (epoxy equivalent: 195)
) 12.5%, novolak type phenol resin (phenol equivalent: 104) 6.7%, 4,4-dithiodimorpholine 0.01% shown in the following chemical formula 3,
【0020】[0020]
【化3】 溶融シリカ粉末80%、エステル系ワックス類 0.2%、硬
化促進剤0.19%およびシランカップリング剤0.4 %を常
温で混合し、さらに90〜95℃で混練してこれを冷却粉砕
して成形材料を製造した。この成形材料を170 ℃に加熱
した金型内にトランスファー注入し、硬化させて成形品
(封止品)をつくった。この成形品について耐湿性等の
特性を試験したので、その結果を表1に示した。特に耐
湿性において本発明の顕著な効果が認められた。Embedded image 80% fused silica powder, 0.2% ester wax, 0.19% curing accelerator and 0.4% silane coupling agent are mixed at room temperature, kneaded at 90-95 ° C, and cooled and pulverized to produce molding material. did. This molding material was transfer-injected into a mold heated to 170 ° C. and cured to produce a molded product (sealed product). The molded article was tested for characteristics such as moisture resistance, and the results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.
【0021】実施例2 ビフェニル型エポキシ樹脂(エポキシ当量213 ) 5.0%
に、フェノールアラルキル樹脂(フェノール当量175 )
4.15%、前記した化3の4,4-ジチオジモルホリン0.01
%、シリカ粉末90%、エステル系ワックス類 0.2%、硬
化触媒0.14%およびシランカップリング剤0.5 %を実施
例1と同様に混合、混練、粉砕して成形材料を製造し
た。また、実施例1と同様にして成形品をつくり、耐湿
性等の特性試験を行ったのでその結果を表1に示した。
特に耐湿性において本発明の顕著な効果が認められた。Example 2 Biphenyl type epoxy resin (epoxy equivalent: 213) 5.0%
And phenol aralkyl resin (phenol equivalent 175)
4.15%, 4,4-dithiodimorpholine 0.01
%, Silica powder 90%, ester waxes 0.2%, curing catalyst 0.14%, and silane coupling agent 0.5% were mixed, kneaded and pulverized in the same manner as in Example 1 to produce a molding material. In addition, a molded product was prepared in the same manner as in Example 1, and a characteristic test such as moisture resistance was performed. The results are shown in Table 1.
In particular, a remarkable effect of the present invention was recognized on moisture resistance.
【0022】実施例3 ビフェニル型エポキシ樹脂(エポキシ当量213 ) 5.0%
に、フェノールアラルキル樹脂(フェノール当量175 )
4.15%、前記した化3の4,4-ジチオジモルホリン0.005
%、硬化触媒0.14%、シランカップリング剤0.5 %、シ
リカ粉末90%およびエステル系ワックス0.2 %を実施例
1と同様に混合、混練、粉砕して成形材料を製造した。
また、実施例1と同様にして成形品をつくり、耐湿性等
の特性試験を行ったのでその結果を表1に示した。特に
耐湿性において本発明の顕著な効果が認められた。Example 3 Biphenyl type epoxy resin (epoxy equivalent: 213) 5.0%
And phenol aralkyl resin (phenol equivalent 175)
4.15%, 0.005 of 4,4-dithiodimorpholine
%, Curing catalyst 0.14%, silane coupling agent 0.5%, silica powder 90% and ester wax 0.2% were mixed, kneaded and pulverized in the same manner as in Example 1 to produce a molding material.
In addition, a molded product was prepared in the same manner as in Example 1, and a characteristic test such as moisture resistance was performed. The results are shown in Table 1. In particular, a remarkable effect of the present invention was recognized on moisture resistance.
【0023】比較例 クレゾールノボラック型エポキシ樹脂(エポキシ当量19
5 )12.5%に、ノボラック型フェノール樹脂(フェノー
ル当量104 ) 6.7%、シリカ粉末80%、硬化促進剤0.19
%、エステル系ワックス類 0.2%およびシラン系カップ
リング剤 0.4%を混合し、実施例1と同様にして成形材
料を製造した。この成形材料を用いて成形品とし、成形
品の諸特性について実施例1と同様にして試験を行い、
その結果を表1に示した。Comparative Example Cresol novolak type epoxy resin (epoxy equivalent: 19)
5) 12.5%, novolak type phenol resin (phenol equivalent: 104) 6.7%, silica powder 80%, curing accelerator 0.19
%, Ester waxes 0.2% and silane coupling agent 0.4% were mixed to produce a molding material in the same manner as in Example 1. A molded article was formed using this molding material, and various properties of the molded article were tested in the same manner as in Example 1.
The results are shown in Table 1.
【0024】[0024]
【表1】 *1 :トランスファー成形によって接着面積4 mm2 の
成形品をつくり、これを175 ℃,8 時間の後硬化を行
い、剪断接着力を求めた。 *2 :トランスファー成形によって成形品をつくり、こ
れを175 ℃,8 時間の後硬化を行い、熱機器分析装置を
用いて測定した。 *3 :成形材料を用いて、2 本以上のアルミニウム配線
を有するシリコン製チップ(テスト用素子)をPdプレ
プレーティングフレームに接着し、175 ℃で2 分間トラ
ンスファー成形して、QFP−208P,2.8 mmt の
成形品をつくり、これを175 ℃,8 時間の後硬化を行っ
た。こうして得た成形品を予め、85℃,40%RH,168
時間の吸湿処理した後、Max240 ℃のIRリフロー炉
を4 回通した。その後、127 ℃,2.5 気圧の飽和水蒸気
中でPCTを行い、アルミニウムの腐食による断線を不
良として評価した。[Table 1] * 1: A molded article having an adhesive area of 4 mm 2 was prepared by transfer molding, and this was post-cured at 175 ° C. for 8 hours, and the shear adhesive strength was determined. * 2: A molded article was prepared by transfer molding, post-cured at 175 ° C for 8 hours, and measured using a thermal equipment analyzer. * 3: Using a molding material, a silicon chip (test element) having two or more aluminum wirings is adhered to a Pd pre-plating frame, transfer molded at 175 ° C for 2 minutes, and QFP-208P, 2.8 make moldings mm t, which 175 ° C., was cured after 8 hours. The molded article thus obtained was previously subjected to 85 ° C., 40% RH, 168
After the moisture absorption treatment for a period of time, the mixture was passed four times through an IR reflow furnace at Max 240 ° C. Thereafter, PCT was performed in saturated steam at 127 ° C. and 2.5 atm, and a disconnection due to aluminum corrosion was evaluated as defective.
【0025】[0025]
【発明の効果】以上の説明および表1から明らかなよう
に、本発明の封止用樹脂組成物および半導体封止装置
は、Pd、Pd−Auメッキのインサートとの接着性に
優れ、IRリフロー後においても剥離することなく、耐
湿性に優れ、その結果、電極の腐食による断線や水分に
よるリーク電流の発生等を著しく低減することができ、
しかも長期間にわたって信頼性を保証することができ
る。As apparent from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention have excellent adhesiveness with Pd and Pd-Au plated inserts and have an IR reflow. Without exfoliation even after, excellent in moisture resistance, as a result, it is possible to significantly reduce the occurrence of leakage current due to disconnection or moisture due to electrode corrosion,
Moreover, reliability can be guaranteed for a long period of time.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 23/29 H01L 23/30 R 23/31 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 23/29 H01L 23/30 R 23/31
Claims (2)
型フェノール樹脂、(C)4,4-ジチオジモルホリンおよ
び(D)無機質充填剤を必須成分とし、樹脂組成物に対
して、前記(C)の4,4-ジチオジモルホリンを0.001 〜
0.1 重量%、また前記(D)の無機質充填剤を25〜95重
量%の割合で含有してなることを特徴とする封止用樹脂
組成物。1. An epoxy resin, (B) a novolak-type phenol resin, (C) 4,4-dithiodimorpholine, and (D) an inorganic filler are essential components. C) 4,4-dithiodimorpholine in an amount of 0.001 to 0.001
A sealing resin composition comprising 0.1% by weight and 25 to 95% by weight of the inorganic filler (D).
型フェノール樹脂、(C)4,4-ジチオジモルホリンおよ
び(D)無機質充填剤を必須成分とし、樹脂組成物に対
して、前記(C)の4,4-ジチオジモルホリンを0.001 〜
0.1 重量%、また前記(D)の無機質充填剤を25〜95重
量%の割合で含有した封止用樹脂組成物の硬化物によっ
て、Pd若しくはPd−Auのプレプレーティングを施
したフレームに搭載された半導体チップを封止してなる
ことを特徴とする半導体封止装置。2. An epoxy resin, (B) a novolak type phenol resin, (C) 4,4-dithiodimorpholine, and (D) an inorganic filler are essential components. C) 4,4-dithiodimorpholine in an amount of 0.001 to 0.001
0.1% by weight and a cured product of a sealing resin composition containing the inorganic filler of (D) in a ratio of 25 to 95% by weight, and mounted on a Pd or Pd-Au pre-plated frame. A semiconductor encapsulation device characterized by encapsulating a manufactured semiconductor chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18184797A JP3440449B2 (en) | 1997-06-24 | 1997-06-24 | Sealing resin composition and semiconductor sealing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18184797A JP3440449B2 (en) | 1997-06-24 | 1997-06-24 | Sealing resin composition and semiconductor sealing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1112442A true JPH1112442A (en) | 1999-01-19 |
JP3440449B2 JP3440449B2 (en) | 2003-08-25 |
Family
ID=16107870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18184797A Expired - Fee Related JP3440449B2 (en) | 1997-06-24 | 1997-06-24 | Sealing resin composition and semiconductor sealing device |
Country Status (1)
Country | Link |
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JP (1) | JP3440449B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003073556A (en) * | 2001-08-31 | 2003-03-12 | Kyocera Chemical Corp | Resin composition for sealing use and semiconductor device |
JP2008239983A (en) * | 2007-02-28 | 2008-10-09 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing and electronic parts device |
KR101340545B1 (en) * | 2010-12-27 | 2013-12-11 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same |
KR20180136494A (en) | 2016-04-28 | 2018-12-24 | 히타치가세이가부시끼가이샤 | Epoxy resin composition and electronic component device |
-
1997
- 1997-06-24 JP JP18184797A patent/JP3440449B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003073556A (en) * | 2001-08-31 | 2003-03-12 | Kyocera Chemical Corp | Resin composition for sealing use and semiconductor device |
JP2008239983A (en) * | 2007-02-28 | 2008-10-09 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing and electronic parts device |
KR101340545B1 (en) * | 2010-12-27 | 2013-12-11 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same |
KR20180136494A (en) | 2016-04-28 | 2018-12-24 | 히타치가세이가부시끼가이샤 | Epoxy resin composition and electronic component device |
Also Published As
Publication number | Publication date |
---|---|
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