JPH1053892A - Pattern electroplating device for substrate and electroplating method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a uniform plating layer having excellent properties on a substrate surface by converging the flow of the plating liquid ejected out of a plating liquid discharge/suction module by shielding plates of a movable anode and supplying the flow on the substrate surface to be plated. SOLUTION: The plating liquid ejected out of the plating liquid discharge/ suction module 1 is supplied to the substrate 3 to be plated via the anode 2 with the shielding plate driven forward and backward in parallel with the substrate 3, by which the substrate is plated. At this time, the flow 15 of the plating liquid ejected out of the plating liquid discharge/suction module 1 is captured by the shielding plates of the anode 2 and is converted to the flow 16 converged by the metallic mesh anode 2b. As a result, the flow 16 of the plating liquid having a sufficient amt. and directivity in combination is acted on the substrate surface to which the metallic mesh anode 2b is diametrically opposed and on which metallic deposition reaction occurs actively. In addition, the regulation of the current distribution in the plating device is made possible and the metallic layer deposited on the substrate surface is evenly grown.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate pattern electroplating apparatus and an electroplating method for electroplating a substrate to be plated.

[0002]

2. Description of the Related Art In a semi-additive method, which is known as a method of manufacturing a printed wiring board, a pattern electroplating method has been conventionally used, and various pattern plating apparatuses have been introduced. The pattern plating method referred to here means that after applying a certain base plating by electroless copper plating or the like to the entire surface of the copper-clad laminate, masking the parts other than the pattern with a resist, and further applying electroplating only to the pattern parts Is the way.

[0003] This method is compared with a method such as a tenting method (panel plating method) which does not perform partial electroplating.
Because it is possible to reduce the thickness of copper to be etched,
It is said to be a method suitable for forming a fine pattern.

FIG. 10 is a schematic sectional view of an apparatus used in conventional pattern plating.

In FIG. 10, reference numeral 8 denotes a plating tank main body, in which a plating solution 9 is placed. The plating solution 9 is circulated by a pump 17, and a filter 22 is provided in the middle of the flow path. An object 3 (cathode) to be plated supported by a jig 18 is attached so as to face the fixed anode plate (anode) 19. The fixed anode plate 19 is attached to an anode bar 21 and the jig 18. Are attached to the cathode bars, respectively.

At this time, the cathode bar 20 and the anode bar 21
Is connected to an electric power source (not shown),
Is applied to the object 3 to be plated to perform electroplating.

[0007]

However, the above-described electroplating apparatus has the following problems. That is,
When pattern plating is performed on an object to be plated, as the substrate size becomes larger or as the pattern becomes finer, the pattern uniformity is deteriorated, and the variation in film thickness and the unevenness of the wiring cross-sectional shape are likely to occur. Become.

Further, when plating is performed for matrix wiring of a display device typified by a liquid crystal display or a plasma display or for other purposes, not only extremely strict uniformity is required but also a plating film is required. The physical properties themselves become a problem. That is, conventionally, a large amount of an additive has been added to a plating bath in order to alleviate the above-described variation in film thickness and irregularity in wiring cross-sectional shape.
Although these additives are effective, they may cause harm depending on the purpose of use of the object to be plated. That is, if the plating receives a history of a high temperature atmosphere or the like at the time of bonding between glasses, deterioration of physical properties due to segregation of a large amount of additive, and contamination of the device due to decomposition and reattachment are likely to occur.

The present invention has been made in view of the above circumstances, and provides a plating layer having a uniform and excellent physical properties on the surface of a substrate to be plated, comprising a movable anode with a shielding plate having a convergence effect of a plating solution flow. An object is to provide an electroplating apparatus that can be formed.

[0010]

The above object is achieved by the following means.

That is, according to the present invention, a mechanism for discharging and sucking a plating solution at an angle perpendicular to a plating surface of a substrate to be plated and a plating surface, which can be moved in parallel with the plating surface. The present invention proposes a pattern electroplating apparatus for a substrate, wherein a shielding plate having a shape for converging a plating solution ejected from the discharge port is attached to a side surface of an anode plate made of a metal mesh.

The present invention also provides an electroplating apparatus having an anode movable parallel to a substrate to be plated and a mechanism for discharging and sucking a plating solution at an angle perpendicular to the substrate to be plated. A pattern electroplating apparatus for a substrate, comprising a mechanism for controlling a discharge amount and / or a suction amount of a plating solution in conjunction with an anode, and proposes a front surface of a part which controls a discharge and a suction of a plating solution. A mechanism for relatively increasing the discharge amount and / or the suction amount of the plating solution at the portion when the movable anode passes through the movable anode, and the mechanism for variably controlling the discharge amount and the suction amount of the plating solution, respectively. A plurality of units provided with in the plane facing the substrate to be plated, the unit,
It includes that the movable anode is installed in parallel with a plane formed by the trajectory, and that the substrate is a glass plate.

Further, the present invention provides a method for discharging a plating solution at an angle perpendicular to a plating surface of a substrate in a plating tank, and forming a shielding plate having a shape capable of converging the plating solution on both sides of a metal mesh. Anode plate facing the substrate to be plated, and moved back and forth in a plane parallel to the substrate to be plated,
Proposed a method for electroplating a substrate characterized by increasing the flow rate of plating solution discharged toward the plating surface facing the anode plate compared to the surface of the substrate not facing directly, and at the same time adjusting the current distribution in the plating equipment Is what you do.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings.

FIG. 1 is a schematic sectional view showing an example of a substrate pattern plating apparatus according to the present invention, and FIG. 2 is a schematic sectional view when the apparatus shown in FIG. 1 is rotated 90 degrees in the horizontal direction.

1 and 2, reference numeral 8 denotes a plating tank main body;
9 is a plating solution built in a plating tank, 3 is a substrate to be plated, 6 is a stand for holding the substrate, and 4 is an external power source (not shown) for supplying electricity to the substrate to be plated. And a cathode contact 2 serving also as a jig for fixing the substrate to be plated to the holding table 6, and a movable anode plate (anode) with a shielding plate 2 which moves back and forth in a plane parallel to the substrate to be plated while facing the substrate to be plated. And is connected to the power supply (not shown) to form a circuit. Further, 5 is an anode drive unit installed outside the plating tank to move the anode as described above, and 7 is a motor for driving the anode through the unit.

A unit 1 sucks and discharges a plating solution from behind the anode 2 to the substrate 3 to be plated. A plurality of units are connected in the longitudinal direction of the plating tank to form a plating solution. Is formed. FIG. 7 is a schematic diagram when the module is viewed from obliquely above. As shown in FIG. 8, each unit in the module is provided with at least one set of a plating solution supply pipe 11 and a plating solution discharge pipe 12, and an independent flow sensor 15, flow control valve 16, pump 17
Is connected, and it is possible to control the suction / discharge amount of the plating solution from the suction / discharge port 10 for each unit.

The movable anode with the shielding plate does not obstruct the flow of the plating solution, so that the metal is not formed in a plate shape but is processed into a mesh shape as shown in FIG. 5 (a), or as shown in FIG. 5 (b). It is desirable to use a large number of platinum wires stretched in the moving direction of the anode.

The material of the metal mesh anode is preferably a metal that is insoluble in the plating solution 9 to be used. Representative examples include titanium, platinum, and titanium coated with platinum on the surface, and can be appropriately selected according to the plating solution.

Further, shielding plates 2 as shown in FIGS. 3A and 3B are provided on both sides of the metal mesh anode 2b.
a is attached, and a shielding plate end side plate 2c as shown in FIGS. 4 (a) and 4 (b) is attached to the end thereof.
Connected to the anode drive unit 5 outside the plating tank,
The anode driving motor 7 can drive the anode back and forth in parallel with the plating substrate. A conductor (not shown) is incorporated in the end plate 2c of the shielding plate, and is connected to the metal mesh anode 2b and an external power supply by a contact (not shown).

At this time, as shown in FIG. 9, the shielding plate 2a captures the flow 15 of the plating solution which has been ejected from the plating solution discharge (and) suction module 1 before being converged, and converges the plating solution. It is converted into a liquid flow 16 and supplied to the substrate surface 3a where the metal mesh anode 2b faces directly and where the metal deposition reaction is most active.

That is, even if the flow rate of the plating solution spouted from the plating solution discharge port 1a is not adjusted according to the change in the position of the movable anode, the metal concentration in the plating solution on the portion of the substrate surface 3a where the most severe decrease occurs. It is possible to increase the flow rate per unit area, and as a result, to reduce the flow rate per unit area to a portion away from the metal mesh anode where the metal deposition reaction hardly occurs, the plating solution discharge port 1a
It is possible to set a larger amount of ejection.

Such an operation has a very important meaning in a plating apparatus using a movable anode as in the present invention. Because a very slow deposition reaction occurs on the surface of the substrate that is not directly opposed to the movable anode, and applying a large flow rate of plating solution to such a substrate surface requires re-dissolution of the deposited plating layer. Will be promoted. That is, when the moving speed of the movable anode is reduced or the size of the substrate to be plated is increased when plating a dense pattern with a narrow wiring width, the substrate is required to complete one cycle of movement of the movable anode. The time during which the surface faces the anode is reduced, and in severe cases, there is a risk that the deposited plating layer is etched. According to the present invention, not only such a danger can be avoided, but also the current distribution is adjusted by adopting the structure shown in FIG. 3A and FIG. 3B to form a pattern formed on the substrate surface. It is possible to promote uniform growth of.

In FIG. 6 (b), the line width q and thickness t of the metal mesh and the size r of one side of the square opening depend on the size of the whole anode, but preferably 0.5 (mm) ≦ q. Is 1.0 (mm) ≤ q 0.5 (mm) ≤ t ≤ 5.0 (mm), preferably 1.0 (mm) ≤ t ≤ 3.0 (mm) 2.0 (mm) ≤ r ≤ 10 (mm), preferably 3.0 (mm) ≦ r ≦ 7.0 (mm).

Here, the line width q and the line thickness t are 0.5 (m
If the thickness is smaller than m), the strength of the anode may decrease. If the wire thickness t is larger than 5 (mm), processing becomes difficult. If the size r of the opening is smaller than 2.0 (mm), the flow of the plating solution may be obstructed, and 10 (mm)
If it is larger than this, the strength of the anode may be reduced.

A shielding plate 2 is provided on the metal mesh anode 2b.
The movable anode with a shielding plate constituted by attaching a and the shielding plate end 2c may satisfy the following specifications. That is, when the angle θ formed between the upper surface of the shielding plate 2a and the metal mesh anode 2b in FIG. 3B is 10 ° <θ <60 °, preferably 20 ° <θ <50 °. In b), the width of the exposed metal mesh anode is 2e, and the width of the upper part of the movable anode with a shielding plate is 2e.
When h, 1.5e <h <5e, preferably 1.7e <h <3e, may be satisfied.

The length w of the exposed metal mesh anode shown in FIG. 6A is desirably the same width as the substrate to be plated.

Where θ is smaller than 10 °,
Or, when it is larger than 60 °, sufficient convergence of the plating solution cannot be expected. Similarly, if h is smaller than 1.5e, a sufficient convergence effect of the plating solution cannot be expected.
On the other hand, if h is larger than 5e, the shadow of the shielding plate 2a is increased, and the surface of the substrate, which is difficult for the plating solution to contact, increases, and plating defects are likely to occur.

Further, assuming that the length of the portion below the metal mesh anode of the shielding plate 2a that functions to regulate the current distribution shown in FIG. 3B is a, 3 (mm) <a, preferably 5 It is desirable that (mm) <a. (The upper limit varies depending on the size of the substrate to be plated.) At this time, if the value of a is smaller than 3 (mm), the effect of adjusting the current distribution cannot be expected, so that it is not preferable.

Further, similar arrows in FIG. 2 represent flow rates in a single unit. FIG. 2 shows a case in which the suction / discharge amount in each unit is controlled uniformly, but the suction / discharge amount near the center of the substrate to be plated is shown.
The discharge amount can be controlled to be larger than that at the end. In other words, the suction / discharge port 10 for the plating solution is made up of a large number of holes or slits, and the installation density at the center of these units is made higher than at the ends. In addition to the method of changing the density of holes or slits, a method of dividing the inside of the unit into a plurality of areas and controlling the flow rate of each area can be implemented.

The sub-circulation plating solution supply pipe 13 and the sub-circulation plating solution discharge pipe 14 shown in FIG. 2 are connected to a preliminary tank (not shown) so that the plating can be rapidly performed in the main plating tank. It is mainly used when it is desired to fill the solution or when the plating solution needs to be quickly discharged from the plating bath. Further, when performing pattern plating, the balance of the suction / discharge amount from the plating solution suction / discharge module can be adjusted by the auxiliary circulation system.

The pattern plating of the substrate is performed by the apparatus as described above, so that the metal mesh movable anode is directly opposed to the substrate surface where the metal deposition reaction is actively occurring. In addition to applying the flow of the plating solution having the function of adjusting the current distribution in the plating apparatus, not only the metal layer deposited on the substrate surface can be grown uniformly, but also the movable anode faces directly. Since it is possible to minimize the re-dissolution of the unexposed parts by the plating solution, it is possible to easily form uniform pattern plating on a substrate having a fine pattern, a large substrate, or the like.

[0033]

【Example】

Example 1 Hereinafter, results when pattern plating is performed on a blue plate glass substrate of 300 mm × 400 mm × 2 mm in thickness will be described.

The main specifications of the pattern plating apparatus according to the present invention used for pattern plating of the glass substrate are listed below. Shape of plating solution suction / discharge unit Width a = 80 (mm), depth b = 500 (mm), height c = 150 (mm) Number of plating solution supply pipes connected to the above suction / discharge unit 2 ( Number) Number of plating solution discharge pipes connected to the suction / discharge unit 2 (number) Maximum flow rate per plating solution supply / discharge pipe 5.0 (l / min) Plating solution supply / discharge pipe Minimum flow rate per line 0.5 (l / min) Number of connected suction / discharge units forming suction / discharge module 10 (pieces) Distance from suction / discharge port of above module to surface of substrate to be plated 50 (mm) The distance from the suction / discharge port of the module to the anode 30 (mm) The shape of the anode The width d = 25 (mm), the depth e = 300 (mm), the thickness f = 3 (mm) The gap of the anode mesh Size and shape 4 mm) × 4 (mm), the pattern plating apparatus of the cathode current density 0.025 (A / cm ²⁾ or more specifications, such as when the moving speed 6 m / min pattern plating of titanium anode coated with a square anode material platinum When performing electroplating on a blue sheet glass, the following treatment was performed to metallize a glass substrate as an insulator.

First, 300 mm × 400 mm × 2 m thick
A palladium metal nucleus is provided on the entire surface of a float blue sheet glass substrate of a thickness of 0.1 m by a known method. Then, a film was formed. The average surface roughness Ra of the plating film was 0.03 μm.

Next, the plated substrate was heated to the maximum ambient temperature of 1
After annealing in an oven at 80 ° C for 5 hours and cooling,
Using a well-known photolithography technique that uses a positive resist, a pattern protected with a resist is formed on one side, and unnecessary plating portions are treated with nitric acid, hydrochloric acid, and acetic acid = 6.
After being exposed to an etching solution prepared at a rate of 6.1 for 40 seconds to remove the resist, the resist remaining on the pattern was further removed by a known oxygen plasma asher to obtain a base plating pattern for pattern electroplating.

The pattern used here is formed by forming lines having a line width of 80 μm parallel to the short side of the substrate at intervals of 100 μm. Further, electroless palladium plating having a width of 5 mm is left on the outer peripheral portion of the substrate so as to be used as a cathode contact at the time of electroplating.

The blue substrate subjected to such a base treatment is
In the pattern plating apparatus according to the present invention, the 80
The μm line and the anode were set so as to be parallel, and electroplating was performed as shown in FIGS.

The electroplating solution used has the following composition and does not contain additives such as brighteners and leveling agents. Copper sulfate 40 (g / l), sulfuric acid 230 (g / l), chloride ion 50 (mg / l) As described above, electricity was supplied to the palladium plating pattern until the copper plating layer thickness became 6 μm.

In the pattern plated substrate thus obtained, there was no line disconnection or peeling.

The film thickness distribution of the line having a line width of 80 μm of the pattern plated substrate was randomly measured by a surface roughness meter to obtain a line.
When measured over several locations, the variation in film thickness was ±
0.2 μm.

Example 2 Using the same apparatus as in Example 1, a similar palladium pattern substrate was subjected to pattern plating by electro-nickel plating. The composition of the plating solution used is as follows. Nickel sulfamate 450 (g / l), nickel chloride 5 (g / l), boric acid 30 (g / l) Additive NSF-H-12 manufactured by Nippon Chemical Industry Co., Ltd.
(Ml / l) At this time, the cathode current density during pattern plating was 0.05
(A / cm ² ), except that the current was applied under the same conditions as in Example 1 until the thickness of the nickel plating layer on the palladium pattern became 6 μm. The pattern plating substrate obtained in this manner did not have any line disconnection or peeling. The line width of this pattern plating substrate 80
When the thickness distribution of the μm line was randomly measured at 100 locations by a surface roughness meter, the variation in the thickness was ± 0.2 μm.

Example 3 Using the same apparatus as in Example 1, a similar palladium pattern substrate was subjected to pattern plating by electrosilver plating. The composition of the plating solution used is as follows. Silver cyanide (AgCN) 120 (g / l), potassium cyanide 45 (g / l), potassium carbonate (K ₂ CO
₃ ) 10 (g / l) At this time, the cathode current density during pattern plating was 0.03
(A / cm ² ) except that the thickness of the silver plating layer was 6 μm on the palladium pattern under the same conditions as in Example 1.
The energization was performed until. The pattern plating substrate obtained in this manner did not have any line disconnection or peeling. The film thickness distribution of the line having a line width of 80 μm of the pattern plated substrate was randomly measured by a surface roughness meter to be 100
When measured over several locations, the variation in film thickness was ±
0.2 μm.

The case of copper, nickel, and silver plating has been described above. However, it is apparent that the present invention is also effective for electroplating of a metal species capable of performing metal deposition by electrolysis. .

In the first to third embodiments, the plating solution suction / discharge module is located above the substrate to be plated. It is obvious that the effect of the present invention is not reduced even if the device is manufactured such that the position is located. Further, it is to be noted that the same applies to the case where the apparatus is manufactured with the substrate to be plated and the plating solution suction / discharge module standing upright.

The results when pattern plating is performed by a conventional electroplating apparatus as shown in FIG. 10 will be described below.

COMPARATIVE EXAMPLE 1 Copper pattern plating was performed using the same palladium-patterned glass substrate as in Example 1. For this pattern plating, an apparatus as shown in FIG. 10 was used. The plating is a single-sided pattern plating similar to that in Example 1,
The test was performed under the following conditions. Total volume of plating bath main tank 600 (l) Circulating amount of plating solution 30 (l / min) Distance between fixed anode surface and glass substrate surface 300 (mm) Cathode current density during pattern plating 0.005 (A / cm ² ) Electroplating solution used Same as in Example 1 Additive (oxyethylene-based surfactant) 5.0 (ml / l) As described above, the thickness of copper plating was 6 μm on the palladium plating pattern. It turned on until it became. Many disconnections and peeling of lines were observed on the completed pattern plated substrate. The line width of this pattern plating substrate 80
When the thickness distribution of the μm line was randomly measured at 100 locations by a surface roughness meter, the variation of the thickness was ± 3 μm.

Comparative Example 2 Pattern nickel plating was performed using a palladium-patterned glass substrate in the same manner as in Example 1. As in Comparative Example 1, an apparatus as shown in FIG. 10 was used for this pattern plating. The plating was a single-sided pattern plating similar to that in Example 1. The additive amount of the additive NSF-H-1 was 15 (ml / l), and the cathode current density during pattern plating was 0.15 (A / cm ^2). ), Except that the current was applied under the same conditions as in Comparative Example 1 until the nickel plating layer thickness on the palladium pattern became 6 μm. A large number of disconnections and peelings of the lines were observed in the pattern plated substrate thus completed. When the film thickness distribution of the line having a line width of 80 μm of the pattern plated substrate was randomly measured at 100 locations by a surface roughness meter, the variation of the film thickness was ± 2 μm.

COMPARATIVE EXAMPLE 3 Pattern silver plating was performed using a glass substrate on which palladium was patterned in the same manner as in Example 1. As in Comparative Example 1, an apparatus as shown in FIG. 10 was used for this pattern plating. The plating is a single-sided pattern plating similar to that in Example 1, and a selenium compound (K ₂ Se) is used as an additive.
O ₃ ) was added on the palladium pattern under the same conditions as in Comparative Example 1 except that 5 (g / l) was added and the cathode current density during pattern plating was 0.4 (A / cm ² ). Electric current was supplied until the thickness of the silver plating layer became 6 μm. A large number of disconnections and peelings of the lines were observed in the pattern plated substrate thus completed. When the film thickness distribution of the line having a line width of 80 μm of the pattern plated substrate was randomly measured at 100 locations by a surface roughness meter, the variation of the film thickness was ± 2 μm.

Example 4 The results obtained when pattern electroplating was performed on a blue glass substrate having a size of 300 mm × 400 mm × 2 mm with an apparatus as shown in FIGS.

The main specifications of the pattern plating apparatus according to the present invention used for the pattern plating of the glass substrate are listed below. Plating solution discharge (and suction) module 1 Width 700 (mm), depth 500 (mm), height 150 (mm) Number of plating solution supply pipes connected to the module 1 5 (pieces) Connected to the module 1 Number of plating solution discharge pipes 5 (pieces) Maximum flow rate per plating solution supply / discharge pipe 20 (l / min) Minimum flow rate per plating solution supply / discharge pipe 2.0 (l / min) ) Distance from plating solution discharge port 1a to surface of substrate to be plated 32 (mm) (21 to 100 mm variable) Distance from plating solution discharge port 1a to upper surface of anode 2b 10 (mm) (2 to 42 mm variable) Metal mesh anode 2b Distance from the lower surface to the surface of the substrate to be plated 5 (mm) (variable from 2 to 40 mm) The shape of the movable anode with the shielding plate is a = 5 (mm), b = 7 (mm), c = in FIG. 1 6 (mm), d = 17 (mm), e = 14 (mm), f = 18 (mm), g = 20 (mm), h = 30 (mm), i = 32 (mm) In a) n = 300 (mm), p = 320 (mm), w = 10 (mm) Material of shielding plate The shape of the metal mesh 2c used for the Teflon anode 2b is t = 1 (FIG. 6B). mm), q = 1.5 (mm), r = 4 (mm) Material of metal mesh 2c Platinum Moving speed of movable anode with shielding plate 50 (mm / min) Material of plating tank and other main parts Polypropylene pattern Cathode current density at the time of plating 0.025 (A / cm ² ) When performing electroplating on a blue sheet glass with a pattern plating apparatus as described above, the following treatment is performed to metallize a glass substrate as an insulator. went.

First, 300 mm × 400 mm × 2 m thick
A palladium metal nucleus is provided on the entire surface of a float blue sheet glass substrate of a thickness of 0.1 m by a known method. Then, a film was formed. The average surface roughness Ra of the plating film was 0.03 μm.

Next, the plated substrate was heated to the maximum ambient temperature of 1
After annealing in an oven at 80 ° C for 5 hours and cooling,
Using a well-known photolithography technique that uses a positive resist, a pattern protected with a resist is formed on one side, and unnecessary plating portions are treated with nitric acid, hydrochloric acid, and acetic acid = 6.
After being exposed to an etching solution prepared at a rate of 6.1 for 40 seconds to remove the resist, the resist remaining on the pattern was further removed by a known oxygen plasma asher to obtain a base plating pattern for pattern electroplating.

The pattern used here is formed by forming lines having a line width of 80 μm parallel to the short side of the substrate at intervals of 100 μm. Further, electroless palladium plating having a width of 5 mm is left on the outer peripheral portion of the substrate so as to be used as a cathode contact at the time of electroplating.

A blue substrate subjected to such a base treatment is
In the pattern plating apparatus according to the present invention, the 80
The μm line and the anode were set so as to be parallel, and electroplating was performed as shown in FIGS.

The electroplating solution used has the following composition and does not contain additives such as brighteners and leveling agents. Copper sulfate 40 (g / l), sulfuric acid 230 (g / l), chloride ion 50 (mg / l) As described above, electricity was supplied on the palladium plating pattern until the copper plating layer thickness became 5 μm.

In the pattern plated substrate thus obtained, there was no line disconnection or peeling.

The film thickness distribution of the line having a line width of 80 μm of the pattern-plated substrate was randomly measured by a surface roughness meter to obtain a line.
When measured over several locations, the variation in film thickness was ±
0.2 μm.

Example 5 Using the same apparatus as in Example 4, pattern plating was performed on the same palladium pattern substrate by electro-nickel plating. The composition of the plating solution used is as follows. Nickel sulfamate 450 (g / l), nickel chloride 5 (g / l), boric acid 30 (g / l) Additive NSF-H-12 manufactured by Nippon Chemical Industry Co., Ltd.
(Ml / l) At this time, the cathode current density during pattern plating was 0.05
(A / cm ² ), except that the current was applied under the same conditions as in Example 1 until the nickel plating layer thickness on the palladium pattern became 5 μm. The pattern plating substrate obtained in this manner did not have any line disconnection or peeling. The line width of this pattern plating substrate 80
When the thickness distribution of the μm line was randomly measured at 100 locations by a surface roughness meter, the variation in the thickness was ± 0.2 μm.

Example 6 Using the same apparatus as in Example 4, a similar palladium pattern substrate was subjected to pattern plating by electrosilver plating. The composition of the plating solution used is as follows. Silver cyanide (AgCN) 120 (g / l), potassium cyanide 45 (g / l), potassium carbonate (K ₂ CO
₃ ) 10 (g / l) At this time, the cathode current density during pattern plating was 0.03
(A / cm ² ) except that the silver plating layer thickness was 5 μm on the palladium pattern under the same conditions as in Example 1.
The energization was performed until. The pattern plating substrate obtained in this manner did not have any line disconnection or peeling. The film thickness distribution of the line having a line width of 80 μm of the pattern plated substrate was randomly measured by a surface roughness meter to be 100
When measured over several locations, the variation in film thickness was ±
0.2 μm.

The case of copper, nickel, and silver plating has been described above. However, it is apparent that the present invention is effective for electroplating of other metal species that can perform metal deposition by electrolysis. .

Also, in Examples 4 to 6, the plating solution discharge (and suction) module 1 was located above the substrate to be plated, as in Examples 1 to 3 above. The module 1 below the substrate to be plated
It is obvious that the effect of the present invention is not reduced even if the device is manufactured such that the position is located. Further, it is noted that the same applies to the case where the apparatus is manufactured with the substrate to be plated and the module 1 standing upright.

[0063]

According to the electroplating apparatus for pattern plating of a substrate according to the present invention, the maximum plating flow rate can be obtained at the surface of the substrate to be plated facing the movable anode, in other words, Discharge of plating solution for each unit so that the supply rate of fresh plating solution having both directionality and uniformity is increased on the surface of the substrate to be plated where the metal deposition reaction occurs most actively by electrolysis of plating solution By controlling the amount (or) the amount of suction, not only the metal layer deposited on the substrate surface can be grown more uniformly than in the conventional apparatus, but also the portion where the movable anode does not face directly, that is, the metal deposition reaction is activated. It is possible to minimize the re-dissolution of the surface of the substrate to be plated away from the movable anode by the plating solution and plating defects due to a decrease in metal concentration. It is possible to easily form a uniform pattern plating, etc. on the substrate and large substrate with.

Further, according to the present invention, the mechanism for discharging (and sucking) the plating solution at an angle perpendicular to the plating surface of the substrate and moving parallel to the plating surface provided in the space between the plating substrate and the mechanism. By attaching a shielding plate having a shape that converges the plating solution flow spouted from the discharge port on both sides of the anode plate made of a possible metal mesh, a constant amount is always applied to the substrate surface directly facing the position-changing anode. Not only can the plating solution flow be supplied, but also the solution supply amount to the substrate surface can be increased without changing the entire plating solution supply amount, and as a result, the discharge amount from the plating solution discharge port is set to be small. It is possible to do. As a result, it is possible to minimize the re-dissolution by the plating solution flow on the substrate surface where a slow deposition reaction that does not directly face the anode proceeds, and it is necessary to set the moving cycle time of the movable anode to a fine pattern. In addition to being able to easily perform pattern plating on a substrate having a large area or a large area substrate, it is possible to promote uniform growth of a pattern formed on the substrate surface by adjusting the current distribution with a shielding plate. .

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a main part in an example of a pattern plating apparatus for a substrate according to the present invention.

FIG. 2 shows a substrate pattern plating apparatus shown in FIG.
FIG. 4 is a schematic cross-sectional view when rotated by degrees.

3 (a) is a perspective view of a movable anode with a shielding plate, and FIG. 3 (b) is a schematic cross-sectional view at the center of FIG. 3 (a).

4 (a) is a schematic view of an end of a movable anode with a shielding plate, and FIG. 4 (b) is a side view of the end of FIG. 4 (a).

5 (a) is a top view and a side view showing an example of a movable anode with a shield plate, and FIG. 5 (b) is a top view and a side view showing another example of a movable anode with a shield plate.

FIG. 6A is a schematic view of an upper surface of a movable anode with a shielding plate, and FIG. 6B is a schematic view of a metal mesh used for the movable anode.

FIG. 7 is a schematic view showing an example of a module including a plurality of plating solution suction / discharge units in the substrate pattern plating apparatus according to the present invention.

FIG. 8 is a schematic diagram showing an example of a plating solution suction / discharge unit in the substrate pattern plating apparatus according to the present invention.

FIG. 9 is a schematic diagram showing a state in which a plating solution flow discharged from a plating solution discharge (and suction) module passes through a movable anode with a shielding plate and is converged toward a plating surface.

FIG. 10 is a schematic view of a conventional plating apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Plating solution suction / discharge unit 2 Anode with shield plate (anode plate) 3 Substrate to be plated 4 Cathode contact 5 Anode drive unit 6 Substrate to be plated holding 7 Anode drive motor 8 Plating tank 9 Plating solution 10 Plating solution suction / discharge Outlet 11 Plating solution discharge tube 12 Plating solution supply tube 13 Sub-circulation system plating solution supply tube 14 Sub-circulation system plating solution discharge tube 15 Plating solution flow sensor 16 Flow control valve 17 Pump 18 Jig 19 Fixed anode 20 Cathode bar 21 Anode bar 22 Filtration machine a Width of plating solution suction / discharge unit b Depth of plating solution suction / discharge unit c Height of plating solution suction / discharge unit

Claims (7)

[Claims] 1. A metal mesh installed in a space between a plating surface and a mechanism for discharging and sucking a plating solution at an angle perpendicular to a plating surface of a substrate to be plated and movable in parallel with the plating surface. A pattern electroplating apparatus for a substrate, comprising: a shielding plate having a shape for converging a plating solution ejected from said discharge port on a side surface of an anode plate. 2. An electroplating apparatus comprising: an anode movable parallel to a substrate to be plated; and a mechanism for discharging and sucking a plating solution at an angle perpendicular to the substrate to be plated. To discharge the plating solution and / or
Alternatively, a pattern electroplating apparatus for a substrate, comprising a mechanism for controlling a suction amount. 3. A mechanism for relatively increasing a discharge amount and / or a suction amount of a plating solution at a portion where a movable anode passes through a front surface of a portion responsible for discharging and sucking a plating solution. Item 3. A pattern electroplating apparatus for a substrate according to Item 2. 4. The substrate pattern according to claim 2, wherein a plurality of units each having a mechanism for variably controlling the discharge amount and the suction amount of the plating solution are provided in a plane facing the substrate to be plated. Electroplating equipment. 5. The pattern electroplating apparatus for a substrate according to claim 4, wherein the unit is installed in parallel with a plane formed by the trajectory of the movable anode. 6. The pattern electroplating apparatus for a substrate according to claim 1, wherein the substrate is a glass plate. 7. An anode plate made of a metal mesh provided with shielding plates formed on both sides at both ends while discharging a plating solution at an angle perpendicular to a plating surface of a substrate in a plating bath. Is moved to the front and back in a plane parallel to the substrate to be plated, and the flow rate of the plating solution discharged toward the plating surface facing the anode plate is increased compared to the surface of the substrate not facing directly A method for electroplating a substrate, wherein a current distribution in a plating apparatus is adjusted at the same time.