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JPH1050890A - Wiring board and its manufacture - Google Patents

Wiring board and its manufacture

Info

Publication number
JPH1050890A
JPH1050890A JP20048796A JP20048796A JPH1050890A JP H1050890 A JPH1050890 A JP H1050890A JP 20048796 A JP20048796 A JP 20048796A JP 20048796 A JP20048796 A JP 20048796A JP H1050890 A JPH1050890 A JP H1050890A
Authority
JP
Japan
Prior art keywords
resin
thermosetting resin
wiring
wiring conductor
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20048796A
Other languages
Japanese (ja)
Other versions
JP3393760B2 (en
Inventor
Satoshi Kajita
智 梶田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP20048796A priority Critical patent/JP3393760B2/en
Publication of JPH1050890A publication Critical patent/JPH1050890A/en
Application granted granted Critical
Publication of JP3393760B2 publication Critical patent/JP3393760B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

PROBLEM TO BE SOLVED: To make wiring fine, and provide a high density wiring board by coating an insulating board, which is formed by bonding specific inorganic insulating powder by specific thermosetting resin, with a wiring conductor, which is formed by boding metal powder by thermosetting resin and thermoplastic resin. SOLUTION: An insulating base 1 is formed by laminating three insulating boards 1a, 1b and 1c, a recessed part 1d is provided at the center of the top plane, and a semiconductor element 3 is bonded and fixed with adhesive such as resin. The insulating boards 1a, 1b and 1c which form the insulating base 1 contain inorganic insulating powder at 60-95wt.%, and thermosetting resin at 5-40wt.%, and the area from the periphery of the recessed part 1d to the bottom plane is coated with wiring conductor 2, which is formed by bonding metal powder by thermosetting resin such as epoxy resin and thermoplastic resin such as acrylic resin. Thus, high density wiring board with fine wiring is obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for housing a semiconductor element for housing a semiconductor element or a hybrid integrated circuit board.

【0002】[0002]

【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスより
成り、その上面中央部に半導体素子を収容する凹部を有
する絶縁基体と、前記絶縁基体の凹部周辺から下面にか
けて導出されたタングステン、モリブデン等の高融点金
属メタライズから成る配線導体とから構成されており、
前記絶縁基体の凹部底面に半導体素子をガラス、樹脂、
ロウ材等の接着剤を介して接着固定するとともに該半導
体素子の各電極を例えばボンディングワイヤ等の電気的
接続手段を介して配線導体に電気的に接続し、しかる
後、前記絶縁基体の上面に、金属やセラミックス等から
成る蓋体を絶縁基体の凹部を塞ぐようにしてガラス、樹
脂、ロウ材等の封止材を介して接合させ、絶縁基体の凹
部内に半導体素子を気密に収容することによって製品と
しての半導体装置となり、配線導体の絶縁基体凹部底面
に導出した部位を外部電気回路基板の配線導体に接続す
ることによって半導体素子の各電極が外部電気回路基板
に電気的に接続されることとなる。
2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a semiconductor element is housed in a central portion of an upper surface thereof. An insulating base having a concave portion to be formed, and a wiring conductor made of a metal having a high melting point metal such as tungsten and molybdenum led out from the periphery of the concave portion to the lower surface of the insulating base,
Glass, resin, a semiconductor element on the bottom of the concave portion of the insulating base,
The electrodes of the semiconductor element are electrically connected to the wiring conductors through electrical connection means such as a bonding wire, and then are fixed to the upper surface of the insulating base by using an adhesive such as a brazing material. A lid made of metal, ceramics, or the like is bonded via a sealing material such as glass, resin, or brazing material so as to cover the concave portion of the insulating base, and the semiconductor element is hermetically accommodated in the concave portion of the insulating base. A semiconductor device as a product, and each electrode of the semiconductor element is electrically connected to the external electric circuit board by connecting a portion of the wiring conductor protruding to the bottom surface of the concave portion of the insulating base to the wiring conductor of the external electric circuit board. Becomes

【0003】この従来の配線基板は、セラミックグリー
ンシート積層法によって製作され、具体的には、酸化ア
ルミニウム、酸化珪素、酸化マグネシウム、酸化カルシ
ウム等のセラミック原料粉末に適当な有機バインダー、
溶剤等を添加混合して泥漿状となすとともにこれを従来
周知のドクターブレード法を採用してシート状とするこ
とによって複数のセラミックグリーンシートを得、しか
る後、前記セラミックグリーンシートに適当な打ち抜き
加工を施すとともに配線導体となる金属ペーストを所定
パターンに印刷塗布し、最後に前記セラミックグリーン
シートを所定の順に上下に積層して生セラミック成形体
となすとともに該生セラミック成形体を還元雰囲気中約
1600℃の高温で焼成することによって製作される。
This conventional wiring board is manufactured by a ceramic green sheet laminating method. Specifically, an organic binder suitable for a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc.
A plurality of ceramic green sheets are obtained by adding a solvent or the like to form a slurry and forming the sheet into a sheet shape by employing a conventionally known doctor blade method. Thereafter, a suitable punching process is performed on the ceramic green sheet. And a metal paste serving as a wiring conductor is printed and applied in a predetermined pattern. Finally, the ceramic green sheets are laminated vertically in a predetermined order to form a green ceramic molded body. It is manufactured by firing at a high temperature of ° C.

【0004】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突すると絶縁基体に欠けや割れ、クラック等が
発生し、その結果、半導体素子を気密に収容することが
できず、半導体素子を長期間にわたり正常、且つ安定に
作動させることができなくなるという欠点を有してい
た。
However, in the conventional wiring board, since ceramics such as an aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the wiring boards are not connected to each other in a transfer process or an automatic line for manufacturing semiconductor devices. If the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate may be chipped, cracked, cracked, etc., and as a result, the semiconductor element cannot be housed in an airtight manner, and the semiconductor element may not be long. There was a drawback that normal and stable operation could not be achieved over a period of time.

【0005】また、前記配線基板の製造方法によれば、
生セラミック成形体を焼成する際、生セラミック成形体
に不均一な焼成収縮が発生し、得られる配線基板に反り
等の変形や寸法のばらつきが発生し、その結果、半導体
素子の各電極と配線導体とを、あるいは配線導体と外部
電気回路基板の配線導体とを正確、且つ確実に電気的に
接続することが困難であるという欠点を有していた。
According to the method of manufacturing a wiring board,
When the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, resulting in deformation and dimensional variation such as warpage of the obtained wiring board, and as a result, each electrode of the semiconductor element and the wiring There is a disadvantage that it is difficult to accurately and reliably electrically connect the conductor or the wiring conductor and the wiring conductor of the external electric circuit board.

【0006】そこで、配線基板の絶縁基体を従来のセラ
ミックスに代えて無機絶縁物粉末を熱硬化性樹脂で結合
した材料で形成するとともに配線導体を従来の高融点金
属メタライズに代えて金属粉末を熱硬化性樹脂で結合し
た材料で形成した配線基板が提案されている。
Therefore, the insulating base of the wiring board is formed of a material obtained by bonding inorganic insulating powder with a thermosetting resin in place of the conventional ceramics, and the metal powder is replaced with the conventional metal powder of the high melting point, and the metal powder is heated in the same manner. 2. Description of the Related Art A wiring board formed of a material bonded with a curable resin has been proposed.

【0007】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基体と金属粉末を熱硬化性樹脂で結合して
成る配線導体とから成る配線基板は、熱硬化性樹脂と無
機絶縁物粉末とを混合して成る半硬化状態の前駆体シー
トを準備するとともに該前駆体シートに適当な打ち抜き
加工を施し、次にこれに熱硬化性樹脂と金属粉末とを混
合して成る金属ペーストを所定パターンに印刷塗布し、
最後に前記金属ペーストが印刷塗布された前駆体シート
を必要に応じて積層するとともにこれを約100〜30
0℃の温度で熱硬化させることによって製作される。
A wiring board composed of an insulating base formed by bonding an inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin comprises a thermosetting resin and an inorganic insulating material. Prepare a precursor sheet in a semi-cured state by mixing powder and a suitable punching process on the precursor sheet, and then apply a metal paste formed by mixing a thermosetting resin and metal powder to this. Print and apply in a predetermined pattern,
Finally, a precursor sheet on which the metal paste is printed and applied is laminated as necessary, and the precursor sheet is laminated for about 100 to 30.
It is manufactured by thermosetting at a temperature of 0 ° C.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基体と
金属粉末を熱硬化性樹脂で結合して成る配線導体とから
成る配線基板は、該配線導体となる金属ペーストに含有
される熱硬化性樹脂の粘性が乏しく、このため金属ペー
ストの印刷性が劣り、該金属ペーストを絶縁基体と成る
前駆体シートに印刷塗布する際に所定のパターンに正確
に印刷塗布することが困難であり、配線が微細で高密度
な配線基板を得ることが困難であった。
However, a wiring board comprising an insulating base formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin, The viscosity of the thermosetting resin contained in the metal paste serving as the wiring conductor is poor, so that the printability of the metal paste is poor, and a predetermined pattern is formed when the metal paste is printed and applied to a precursor sheet serving as an insulating base. However, it is difficult to print and apply the wiring accurately and it is difficult to obtain a wiring board with fine wiring and high density.

【0009】尚、前記配線導体となる金属ペーストに含
有される熱硬化性樹脂の含有量を例えば約30重量%を
こえる多量にすると金属ペーストの印刷性を改善するこ
とができるものの配線導体の電気抵抗が大きくなってし
まい、やはり配線が微細で高密度な配線基板を得ること
ができない。
[0009] When the content of the thermosetting resin contained in the metal paste as the wiring conductor is set to a large amount exceeding, for example, about 30% by weight, the printability of the metal paste can be improved. The resistance becomes large, and it is impossible to obtain a wiring board with fine wiring and high density.

【0010】[0010]

【課題を解決するための手段】本発明の配線基板は、6
0乃至95重量%の無機絶縁物粉末と5乃至40重量%
の熱硬化性樹脂とから成り、前記無機絶縁物粉末を前記
熱硬化性樹脂により結合して成る絶縁基体に、金属粉末
を熱硬化樹脂及び熱可塑性樹脂により結合した配線導体
を被着させて成ることを特徴とするものであり、絶縁基
体が無機絶縁物粉末を靭性に優れる熱硬化樹脂で結合す
ることによって形成されていることから配線基板同士あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突しても絶縁基体に欠けや割れ、クラック等が
発生することはなく、また配線導体中に多量の樹脂を含
有させる必要がなく、配線導体の電気抵抗を極めて小さ
いものとすることができる。
According to the present invention, there is provided a wiring board comprising:
0 to 95% by weight of inorganic insulating powder and 5 to 40% by weight
A wiring conductor formed by bonding a metal powder with a thermosetting resin and a thermoplastic resin to an insulating substrate formed by bonding the inorganic insulating powder with the thermosetting resin. It is characterized in that the insulating substrate is formed by bonding inorganic insulating powder with a thermosetting resin having excellent toughness, so that the wiring substrates are connected to each other or to the wiring substrate and a part of a semiconductor device manufacturing automatic line. Even if a strong collision occurs, the insulating substrate will not be chipped, cracked, cracked, etc., and it is not necessary to include a large amount of resin in the wiring conductor, and the electric resistance of the wiring conductor can be extremely small. it can.

【0011】また、本発明の配線基板の製造方法は、熱
硬化性樹脂と無機絶縁物粉末とを混合して成る前駆体シ
ートを準備する工程と、前記前駆体シートを半硬化させ
る工程と、前記前駆体シートに熱硬性樹脂と熱可塑性樹
脂と金属粉末とを混合して成る金属ペーストを所定パタ
ーンに印刷する工程と、前記前駆体シート及び金属ペー
ストを完全に熱硬化させる工程と、から成ることを特徴
とするものであり、熱硬化性樹脂と無機絶縁物粉末とを
混合して成る前駆体シート、及び熱硬化性樹脂と熱可塑
性樹脂と金属粉末とを混合して成る金属ペーストを熱硬
化させることによって製作され、焼成工程がないことか
ら不均一な焼成収縮による変形や寸法のばらつきが発生
することはなく、また前駆体シートに印刷塗布される金
属ペーストが熱可塑性樹脂を含有することから適度な粘
性を有し、これを前駆体シートに印刷塗布する際に正確
に印刷塗布することができる。
Further, the method for manufacturing a wiring board according to the present invention comprises the steps of preparing a precursor sheet formed by mixing a thermosetting resin and an inorganic insulating powder; and semi-curing the precursor sheet. A step of printing a metal paste formed by mixing a thermosetting resin, a thermoplastic resin, and a metal powder on the precursor sheet in a predetermined pattern, and a step of completely thermosetting the precursor sheet and the metal paste. A precursor sheet formed by mixing a thermosetting resin and an inorganic insulating powder; and a metal paste formed by mixing a thermosetting resin, a thermoplastic resin, and a metal powder. It is manufactured by curing, and since there is no firing step, there is no deformation or dimensional variation due to uneven firing shrinkage, and the metal paste printed and applied to the precursor sheet is heatable. It has an appropriate viscosity because it contains sexual resin, which can be accurately printed coating when printing applied to the precursor sheet.

【0012】[0012]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の配線基板を半導体素
子を収容する半導体素子収納用パッケージに適用した場
合の一実施例を示し、1は絶縁基体、2は配線導体であ
る。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, wherein 1 is an insulating base, and 2 is a wiring conductor.

【0013】前記絶縁基体1は、三枚の絶縁基板1a、
1b、1cを積層することによって形成されており、そ
の上面中央部に半導体素子を収容するための凹部1dを
有し、該凹部1d底面には半導体素子3が樹脂等の接着
剤を介して接着固定される。
The insulating base 1 comprises three insulating substrates 1a,
The semiconductor device 3 is formed by laminating 1b and 1c, and has a concave portion 1d for accommodating a semiconductor element in the center of the upper surface thereof. Fixed.

【0014】前記絶縁基体1を構成する絶縁基板1a、
1b、1cは、例えば酸化珪素、酸化アルミニウム、窒
化アルミニウム、炭化珪素、チタン酸バリウム、チタン
酸ストロンチウム、チタン酸カルシウム、酸化チタン、
ゼオライト等の無機絶縁物粉末をエポキシ樹脂、ポリイ
ミド樹脂、フェノール樹脂、熱硬化性ポリフェニレンエ
ーテル樹脂、ポリイミドアミド樹脂、ビスマレイミドト
リアジン樹脂等の熱硬化性樹脂により結合することによ
って形成されており、絶縁基体1を構成する三枚の絶縁
基板1a、1b、1cはその各々が無機絶縁物粉末を靭
性に優れるエポキシ樹脂等の熱硬化性樹脂で結合するこ
とによって形成されていることから絶縁基体1に外力が
印加されても該外力によって絶縁基体1に欠けや割れ、
クラック等が発生することはない。
An insulating substrate 1a constituting the insulating base 1;
1b and 1c are, for example, silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, strontium titanate, calcium titanate, titanium oxide,
It is formed by bonding an inorganic insulating powder such as zeolite with a thermosetting resin such as an epoxy resin, a polyimide resin, a phenol resin, a thermosetting polyphenylene ether resin, a polyimide amide resin, and a bismaleimide triazine resin. Since the three insulating substrates 1a, 1b, and 1c constituting the first substrate 1 are each formed by bonding an inorganic insulating powder with a thermosetting resin such as an epoxy resin having excellent toughness, an external force is applied to the insulating substrate 1. Chipping or cracking of the insulating substrate 1 due to the external force even when
There is no crack or the like.

【0015】尚、前記無機絶縁物粉末を熱硬化性樹脂で
結合して成る絶縁基体1を構成する三枚の絶縁基板1
a、1b、1cは、これに含有される無機絶縁物粉末の
含有量が60重量%未満であると絶縁基体1の熱膨張係
数が半導体素子3の熱膨張係数に対して大きく相違し、
半導体素子3が作動時に熱を発し、該熱が半導体素子3
と絶縁基体1の両者に印可されると、両者間に両者の熱
膨張係数の相違に起因する大きな熱応力が発生し、この
大きな熱応力によって半導体素子3が絶縁基体1から剥
離したり、半導体素子3に割れや欠けが発生してしま
う。従って、前記絶縁基体1を構成する絶縁基板1a、
1b、1cは、その各々の内部に含有される無機絶縁物
粉末の量が60乃至95重量%の範囲に特定される。
Incidentally, three insulating substrates 1 constituting an insulating base 1 formed by bonding the inorganic insulating powder with a thermosetting resin.
a, 1b, and 1c are such that when the content of the inorganic insulating powder contained therein is less than 60% by weight, the coefficient of thermal expansion of the insulating base 1 greatly differs from the coefficient of thermal expansion of the semiconductor element 3,
When the semiconductor element 3 generates heat, the heat is generated by the semiconductor element 3
When the semiconductor element 3 is applied to both the insulating substrate 1 and the insulating substrate 1, a large thermal stress is generated between the two due to a difference in thermal expansion coefficient between the two. The element 3 is cracked or chipped. Therefore, the insulating substrate 1a constituting the insulating base 1
1b and 1c are each specified so that the amount of the inorganic insulating powder contained therein is in the range of 60 to 95% by weight.

【0016】また前記絶縁基体1は、その凹部1d周辺
から下面にかけて例えば銅、銀、金等の金属粉末をエポ
キシ樹脂等の熱硬化樹脂及びアクリル系樹脂等の熱可塑
性樹脂により結合した配線導体2が被着形成されてい
る。
The insulating substrate 1 has a wiring conductor 2 formed by bonding metal powders of, for example, copper, silver, gold or the like from the periphery to the lower surface of the recess 1d with a thermosetting resin such as an epoxy resin or a thermoplastic resin such as an acrylic resin. Are formed.

【0017】前記配線導体2は、半導体素子3の各電極
を外部電気回路に電気的に接続する作用を為し、絶縁基
体1の凹部1d周辺に位置する部位には半導体素子3の
各電極がボンディングワイヤ4を介して電気的に接続さ
れ、また絶縁基体1の下面に導出された部位は外部電気
回路に電気的に接続される。
The wiring conductor 2 functions to electrically connect each electrode of the semiconductor element 3 to an external electric circuit. Each electrode of the semiconductor element 3 is located at a portion of the insulating base 1 located around the concave portion 1d. Electrical connection is made via a bonding wire 4, and a portion led out to the lower surface of the insulating base 1 is electrically connected to an external electric circuit.

【0018】前記配線導体2に含有される金属粉末は、
配線導体2に導電性を付与する作用を為し、配線導体2
における含有量が70重量%未満では配線導体2の電気
抵抗が高いものとなり、また95重量%を越えると金属
粉末を熱硬化性樹脂及び熱可塑性樹脂で強固に結合して
所定の配線導体2を形成することが困難となる傾向にあ
る。従って、前記配線導体2は、その内部に含有される
金属粉末の量を70乃至95重量%の範囲としておくこ
とが好ましい。
The metal powder contained in the wiring conductor 2 is as follows:
The wiring conductor 2 acts to impart conductivity to the wiring conductor 2.
If the content is less than 70% by weight, the electrical resistance of the wiring conductor 2 becomes high, and if it exceeds 95% by weight, the metal powder is firmly bound with a thermosetting resin and a thermoplastic resin to form a predetermined wiring conductor 2. It tends to be difficult to form. Therefore, it is preferable that the amount of the metal powder contained in the wiring conductor 2 be in the range of 70 to 95% by weight.

【0019】また、前記配線導体2に含有される熱硬化
性樹脂及び熱可塑性樹脂は、配線導体2に含有される金
属粉末を結合するとともに配線導体2を絶縁基体1に被
着させる作用を為し、配線導体2における含有量が5重
量%未満では、金属粉末同士を強固に結合して配線導体
2を形成することが困難となる傾向にあり、また30重
量%を越えると配線導体2の電気抵抗が大きなものとな
る傾向にある。従って、前記配線導体2に含有される熱
硬化性樹脂及び熱可塑性樹脂の含有量は5乃至30重量
%の範囲が好ましい。
The thermosetting resin and the thermoplastic resin contained in the wiring conductor 2 serve to bind the metal powder contained in the wiring conductor 2 and to adhere the wiring conductor 2 to the insulating base 1. If the content in the wiring conductor 2 is less than 5% by weight, it tends to be difficult to form the wiring conductor 2 by firmly bonding the metal powders to each other. Electric resistance tends to be large. Therefore, the content of the thermosetting resin and the thermoplastic resin contained in the wiring conductor 2 is preferably in the range of 5 to 30% by weight.

【0020】更に、前記配線導体2に含有される熱硬化
性樹脂及び熱可塑性樹脂は、熱硬化性樹脂が配線導体2
に耐熱性を付与するとともに熱可塑性樹脂が後述する配
線導体2となる金属ペーストに良好な印刷性を付与する
作用を為し、前記熱硬化性樹脂と熱可塑性樹脂との合計
量に対する熱可塑性樹脂の配合量が5重量%未満であれ
ば、配線導体2と成る金属ペーストの印刷性が劣るもの
となり、該金属ペーストを絶縁基体1a、1b、1cと
成る前駆体シートに所定パターンに印刷塗布する際に正
確に印刷することが困難となる傾向にあり、また前記配
合量が90重量%を越えると、配線導体2の耐熱性が低
いものとなり配線基板に熱が印加された際に配線導体2
に変形や断線を引き起こしやすいものとなる。従って、
前記配線導体2に含有される熱硬化性樹脂及び熱可塑性
樹脂は、熱硬化性樹脂と熱可塑性樹脂との合計量に対す
る熱可塑性樹脂の配合量が5乃至90重量%の範囲が好
ましい。
Further, the thermosetting resin and the thermoplastic resin contained in the wiring conductor 2 may be a thermosetting resin or a thermoplastic resin.
In addition to providing heat resistance to the resin, the thermoplastic resin acts to impart good printability to the metal paste that will be the wiring conductor 2 described below, and the thermoplastic resin with respect to the total amount of the thermosetting resin and the thermoplastic resin Is less than 5% by weight, the printability of the metal paste that becomes the wiring conductor 2 becomes poor, and the metal paste is printed and applied in a predetermined pattern on the precursor sheets that become the insulating bases 1a, 1b, and 1c. When the amount is more than 90% by weight, the heat resistance of the wiring conductor 2 becomes low, and when the heat is applied to the wiring board, the wiring conductor 2 is hardly printed.
This easily causes deformation and disconnection. Therefore,
The thermosetting resin and the thermoplastic resin contained in the wiring conductor 2 preferably have a blending amount of the thermoplastic resin of 5 to 90% by weight based on the total amount of the thermosetting resin and the thermoplastic resin.

【0021】前記配線導体2は、またその露出する表面
にニッケル、金等の耐食性に優れ、且つ良導電性の金属
をメッキ法により1.0乃至20.0μmの厚みに層着
させておくと配線導体2の酸化腐食を有効に防止するこ
とができるとともに配線導体2とボンディングワイヤ4
とを強固に電気的に接続させることができる。従って前
記配線導体2は、その露出する表面にニッケルや金等の
耐食性に優れ、且つ良導電性の金属をメッキ法により
1.0乃至20.0μmの厚みに層着させておくことが
好ましい。
The wiring conductor 2 is preferably provided with a metal having excellent corrosion resistance, such as nickel or gold, and a good conductivity, having a thickness of 1.0 to 20.0 μm by a plating method. Oxidation and corrosion of the wiring conductor 2 can be effectively prevented, and the wiring conductor 2 and the bonding wire 4
Can be firmly and electrically connected. Therefore, it is preferable that the wiring conductor 2 is coated with a metal having excellent corrosion resistance, such as nickel or gold, and a good conductivity by a plating method to a thickness of 1.0 to 20.0 μm on the exposed surface.

【0022】かくして本発明の配線基板によれば、絶縁
基体1の凹部1d底面に半導体素子3を樹脂等の接着剤
を介して接着固定するとともに半導体素子3の各電極を
ボンディングワイヤ4を介して配線導体2に電気的に接
続し、最後に前記絶縁基体1の上面に蓋体5を樹脂等か
ら成る封止材を介して接合させ、絶縁基体1と蓋体5と
から成る容器内部に半導体素子3を気密に収容すること
により製品としての半導体装置が完成する。
Thus, according to the wiring board of the present invention, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1d of the insulating base 1 with an adhesive such as a resin, and each electrode of the semiconductor element 3 is bonded via the bonding wire 4. It is electrically connected to the wiring conductor 2, and finally, the lid 5 is joined to the upper surface of the insulating base 1 via a sealing material made of resin or the like, and the semiconductor is placed inside the container formed of the insulating base 1 and the lid 5. The semiconductor device as a product is completed by housing the element 3 in an airtight manner.

【0023】次に前記半導体素子収納用パッケージに使
用される配線基板の製造方法について説明する。
Next, a method of manufacturing a wiring board used in the package for housing a semiconductor element will be described.

【0024】先ず、図2(a)に示すように無機絶縁物
粉末を熱硬化樹脂で結合して成る三枚の前駆体シート1
1a、11b、11cを準備するとともにこれらに熱を
印加して半硬化させる。
First, as shown in FIG. 2 (a), three precursor sheets 1 formed by bonding inorganic insulating powder with a thermosetting resin
1a, 11b and 11c are prepared, and heat is applied to these to make them semi-cured.

【0025】前記三枚の前駆体シート11a、11b、
11cは、無機絶縁物粉末を熱硬化性樹脂で結合するこ
とによって形成されており、例えば粒径が0.1〜10
0μm程度の酸化珪素粉末にエポキシ樹脂及びイミダゾ
ール系硬化剤を添加混合して得たペーストをドクターブ
レード法等のシート成形法を採用してシート状となすこ
とによって製作される。
The three precursor sheets 11a, 11b,
11c is formed by bonding an inorganic insulating powder with a thermosetting resin, and has a particle size of, for example, 0.1 to 10
A paste obtained by adding and mixing an epoxy resin and an imidazole-based curing agent to silicon oxide powder of about 0 μm is formed into a sheet by employing a sheet forming method such as a doctor blade method.

【0026】尚、前記半硬化された前駆体シート11
a、11b、11cは、その硬度がJIS7215,6
301のタイプA測定に規定の硬度で40乃至90とな
るように半硬化させておくと、後述するように三枚の前
駆体シート11a、11b、11cに、打ち抜き加工を
施したり配線導体2となる金属ペーストを印刷塗布する
際等に前駆体シート11a、11b、11cに変形やク
ラックをさせることなく正確、且つ確実に打ち抜き加工
や金属ペーストの印刷を行うことができ、その結果、所
望の配線基板を正確、且つ確実に製作することができ
る。従って、前記半硬化された前駆体シート11a、1
1b、11cはその硬度をJIS7215,6301の
タイプA測定に規定の硬度で40乃至90の範囲として
おくことが好ましい。
The semi-cured precursor sheet 11
a, 11b, and 11c have the hardness of JIS7215,6.
When semi-cured so as to have a prescribed hardness of 40 to 90 in the type A measurement of 301, the three precursor sheets 11a, 11b, and 11c are subjected to punching processing or the wiring conductor 2 as described later. It is possible to accurately and reliably perform punching and printing of the metal paste without causing deformation or cracks in the precursor sheets 11a, 11b, and 11c when printing and applying the metal paste to be formed. The substrate can be manufactured accurately and reliably. Accordingly, the semi-cured precursor sheets 11a, 1
It is preferable that the hardness of 1b and 11c is set in the range of 40 to 90 as the hardness specified in the type A measurement of JIS7215,6301.

【0027】次に図2(b)に示すように前記半硬化さ
れた三枚の前駆体シート11a、11b、11cのうち
二枚の前駆体シート11a、11bに凹部1dとなる開
口A、A’を、二枚の前駆体シート11b、11cに配
線導体2を引き回すための貫通孔B、B’を各々形成す
る。
Next, as shown in FIG. 2 (b), two precursor sheets 11a, 11b out of the three semi-cured precursor sheets 11a, 11b, 11c are provided with openings A, A which form recesses 1d. Are formed in the two precursor sheets 11b and 11c, respectively, to form through holes B and B 'for routing the wiring conductor 2.

【0028】前記開口A、A’及び貫通孔B、B’は、
前駆体シート11a、11b、11cに従来周知のパン
チング加工法を施し、前駆体シート11a、11b、1
1cの各々に所定形状の孔を穿孔することによって形成
される。
The openings A and A 'and the through holes B and B'
The precursor sheets 11a, 11b, and 11c are subjected to a conventionally known punching method, and the precursor sheets 11a, 11b, and 1c are subjected to punching.
1c is formed by piercing a hole of a predetermined shape.

【0029】次に図2(c)に示すように、前記半硬化
された前駆体シート11b、11cの上下面及び貫通孔
B、B’内に配線導体2となる金属ペースト12を従来
周知のスクリーン印刷法及び充填法を採用して所定パタ
ーンに印刷塗布するとともにこれを約25〜100℃の
温度で1〜60分間加熱し半硬化させる。
Next, as shown in FIG. 2 (c), a metal paste 12 serving as the wiring conductor 2 is formed on the upper and lower surfaces of the semi-cured precursor sheets 11b and 11c and in the through holes B and B 'by a known method. A predetermined pattern is printed and applied using a screen printing method and a filling method, and this is heated and semi-cured at a temperature of about 25 to 100 ° C. for 1 to 60 minutes.

【0030】前記配線導体2となる金属ペースト12と
しては、例えば粒径が0.1〜20μm程度の銅等粉末
にビスフェノールA型エポキシ樹脂、ノボラック型エポ
キシ樹脂、グリシジルエステル型エポキシ樹脂等のエポ
キシ樹脂及びアミン系硬化剤、イミダゾール系硬化剤、
酸無水物系硬化剤等の硬化剤等の熱硬化性樹脂にアクリ
ル系樹脂やポリエステル系樹脂等の熱可塑性樹脂を添加
混合しペースト状となしたものが使用される。
The metal paste 12 serving as the wiring conductor 2 is, for example, a powder of copper having a particle size of about 0.1 to 20 μm or an epoxy resin such as a bisphenol A epoxy resin, a novolak epoxy resin, or a glycidyl ester epoxy resin. And amine-based curing agents, imidazole-based curing agents,
A paste formed by adding and mixing a thermoplastic resin such as an acrylic resin or a polyester resin to a thermosetting resin such as a curing agent such as an acid anhydride-based curing agent is used.

【0031】前記配線導体2となる金属ペースト12
は、熱可塑性樹脂を含有していることから適度な粘性を
有しており、これを絶縁基板1a、1b、1cとなる前
駆体シート11a、11b、11cに所定パターンに印
刷塗布する際、正確に印刷塗布することができ、そのた
め配線の微細な高密度の配線基板を製作することができ
る。
The metal paste 12 to be the wiring conductor 2
Has a suitable viscosity because it contains a thermoplastic resin, and when this is printed and applied in a predetermined pattern on the precursor sheets 11a, 11b, and 11c to be the insulating substrates 1a, 1b, and 1c, , So that a high-density wiring board with fine wiring can be manufactured.

【0032】尚、前記配線導体2となる金属ペースト1
2は、これに含有される熱硬化性樹脂及び熱可塑性樹脂
の含有量が30重量%を越えると、該金属ペースト12
を硬化させて配線導体2となした際に、配線導体2の電
気抵抗が高いものとなり、また5重量%未満では、金属
ペースト12にペーストとしての流動性を十分に付与す
ることができずに金属ペースト12を絶縁基板1a、1
b、1cとなる前駆体シート11a、11b、11cに
正確に印刷塗布することが困難となる傾向にある。従っ
て、前記金属ペースト12は、これに含有される熱硬化
性樹脂及び熱可塑性樹脂の含有量が5乃至30重量%の
範囲が好ましい。
The metal paste 1 to be the wiring conductor 2
2 when the content of the thermosetting resin and the thermoplastic resin contained therein exceeds 30% by weight,
Is cured to form the wiring conductor 2, the electric resistance of the wiring conductor 2 becomes high, and if it is less than 5% by weight, the metal paste 12 cannot sufficiently impart fluidity as a paste. The metal paste 12 is applied to the insulating substrates 1a, 1
It tends to be difficult to accurately print and apply the precursor sheets 11a, 11b, and 11c to be b and 1c. Therefore, the metal paste 12 preferably has a content of the thermosetting resin and the thermoplastic resin in the range of 5 to 30% by weight.

【0033】更に、前記配線導体2となる金属ペースト
12は、これに含有される熱硬化性樹脂と熱可塑性樹脂
との合計量に対する熱可塑性樹脂の配合量が5重量%未
満であれば、金属ペースト12の粘性が小さいものとな
り、金属ペースト12を絶縁基板1a、1b、1cとな
る前駆体シート11a、11b、11cに正確に印刷塗
布することが困難となる傾向にあり、また90重量%を
越えると、該金属ペースト12を硬化させて配線導体2
となした際に、配線導体2の耐熱性が低いものとなり、
配線基板に熱が印加された際に配線導体2に断線や変形
が発生しやすいものとなる。従って、前記金属ペースト
12は、これに含有される熱硬化性樹脂と熱可塑性樹脂
との合計量に対する熱可塑性樹脂の配合量が5乃至90
重量%の範囲が好ましい。
Further, the metal paste 12 serving as the wiring conductor 2 is made of a metal if the blending amount of the thermoplastic resin is less than 5% by weight based on the total amount of the thermosetting resin and the thermoplastic resin contained therein. The viscosity of the paste 12 becomes small, and it tends to be difficult to accurately print and apply the metal paste 12 to the precursor sheets 11a, 11b, 11c to be the insulating substrates 1a, 1b, 1c. If it exceeds, the metal paste 12 is hardened and the wiring conductor 2
When this is done, the heat resistance of the wiring conductor 2 becomes low,
When heat is applied to the wiring board, the wiring conductor 2 is likely to be disconnected or deformed. Therefore, in the metal paste 12, the blending amount of the thermoplastic resin with respect to the total amount of the thermosetting resin and the thermoplastic resin contained therein is 5 to 90.
A range of weight% is preferred.

【0034】そして最後に前記三枚の半硬化された前駆
体シート11a、11b、11cを上下に積層するとと
もにこれを約80〜300℃の温度で約10秒〜24時
間加熱し前記前駆体シート11a、11b、11c及び
前駆体シート11b、11cに所定パターンに印刷塗布
された金属ペースト12を完全に熱硬化させることによ
って図1に示すような絶縁基体1に配線導体2を被着さ
せた配線基板が完成する。この場合、前記前駆体シート
11a、11b、11c及び金属ペースト12は、熱硬
化時に収縮することは殆どなく、従って、得られる配線
基板に変形や寸法のばらつきが発生することは皆無であ
り、半導体素子と配線導体とを正確に接続することが可
能となる。
Finally, the three semi-cured precursor sheets 11a, 11b, and 11c are vertically stacked and heated at a temperature of about 80 to 300 ° C. for about 10 seconds to 24 hours. Wiring in which a metal conductor 12 printed and applied in a predetermined pattern on 11a, 11b, 11c and precursor sheets 11b, 11c is completely cured by heat so that a wiring conductor 2 is applied to an insulating substrate 1 as shown in FIG. The substrate is completed. In this case, the precursor sheets 11a, 11b, 11c and the metal paste 12 hardly shrink during thermosetting, so that the resulting wiring board does not undergo any deformation or variation in dimensions. The element and the wiring conductor can be accurately connected.

【0035】尚、本発明は、上述の実施の形態に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲であ
れば、種々の変更は可能であり、例えば上述の実施例で
は、本発明の配線基板を半導体素子を収容する半導体素
子収納用パッケージに適用した場合を例に採って説明し
たが、例えば混成集積回路等他の用途に使用される配線
基板に適用してもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. Although the case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element has been described as an example, the present invention may be applied to a wiring board used for other purposes such as a hybrid integrated circuit.

【0036】また、上述の実施の形態では、三枚の前駆
体シートを積層することによって配線基板を製作した
が、一枚や二枚、あるいは四枚以上の前駆体シートを使
用して配線基板を製作してもよい。
In the above-described embodiment, the wiring board is manufactured by laminating three precursor sheets. However, one, two, or four or more precursor sheets are used to form the wiring board. May be manufactured.

【0037】更に、上述の実施例では、絶縁基体は、無
機絶縁物粉末と熱硬化性樹脂とから成っていたが、これ
らに更にガラス繊維やカーボン繊維、アラミド繊維、ア
ルミナ繊維、チタン酸カリウムウィスカー、ホウ酸アル
ミニウムウィスカー等の短繊維を配合させてもよい。
Further, in the above-described embodiment, the insulating base was made of the inorganic insulating powder and the thermosetting resin. However, the insulating base was further made of glass fiber, carbon fiber, aramid fiber, alumina fiber, potassium titanate whisker. And short fibers such as aluminum borate whiskers.

【0038】また更に上述の実施例では、配線導体は、
金属粉末を熱硬化性樹脂及び熱可塑性により結合するこ
とにより形成されていたが、配線導体に更に低融点金属
を配合させるとともに該低融点金属により金属粉末同士
を結合することにより形成されてもよく、この場合、配
線導体となる金属ペースト中に低融点金属として例えば
錫−鉛半田等から成る低融点金属粉末を配合させるとと
もにれを絶縁基体となる前駆体シートに印刷塗布した
後、これに熱を印加し低融点金属粉末を溶融させ該溶融
した低融点金属により金属粉末を結合する方法が採用さ
れる。
Further, in the above embodiment, the wiring conductor is
Although the metal powder was formed by bonding with a thermosetting resin and a thermoplastic resin, the metal powder may be further formed by combining the metal powder with the low melting point metal by further mixing a low melting point metal in the wiring conductor. In this case, a low-melting-point metal powder made of, for example, tin-lead solder or the like is mixed as a low-melting-point metal into a metal paste to be a wiring conductor, and the paste is printed and applied to a precursor sheet to be an insulating base. Is applied to melt the low melting point metal powder, and the metal powder is bound by the melted low melting point metal.

【0039】[0039]

【発明の効果】本発明の配線基板によれば、絶縁基体が
無機絶縁物粉末を靱性に優れる熱硬化性樹脂で結合する
ことにより形成されていることから、配線基板同士ある
いは配線基板と半導体装置の一部とが激しく衝突しても
絶縁基体に欠けや割れ、クラック等が発生することはな
く、更に配線導体中に粘性に優れた熱可塑性樹脂を含有
させたことから、配線導体中に多量の樹脂を含有させる
必要がなく、配線導体の電気抵抗を極めて小さいものと
することができる。
According to the wiring board of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with the thermosetting resin having excellent toughness, the wiring boards or the wiring board and the semiconductor device are formed. No chipping, cracking, cracks, etc. occur in the insulating base even if the part of the wire collides violently, and the wiring conductor contains a highly viscous thermoplastic resin. And the electric resistance of the wiring conductor can be made extremely small.

【0040】また本発明の配線基板の製造方法によれ
ば、熱硬化性樹脂と無機金属粉末とを混合して成る前駆
体シート及び熱硬化性樹脂と金属粉末とを混合して成る
金属ペーストを熱硬化させることによって製作され、前
記前駆体シート及び金属ペーストは殆ど収縮しないこと
から、収縮に起因する変形や寸法のばらつきは発生せ
ず、半導体素子を配線導体に正確に電気的接続すること
ができる。
According to the method of manufacturing a wiring board of the present invention, a precursor sheet formed by mixing a thermosetting resin and an inorganic metal powder and a metal paste formed by mixing a thermosetting resin and a metal powder are used. Since the precursor sheet and the metal paste hardly shrink, they are manufactured by thermosetting, so that deformation and dimensional variation due to shrinkage do not occur, and it is possible to accurately electrically connect the semiconductor element to the wiring conductor. it can.

【0041】更に本発明の配線基板の製造方法によれ
ば、前駆体シートに印刷塗布される金属ペーストが熱可
塑性樹脂を含有することから適度な粘性を有し、これを
前駆体シートに印刷塗布する際に正確に印刷塗布するこ
とができ、配線が微細で高密度な配線基板を提供するこ
とができる。
Further, according to the method for manufacturing a wiring board of the present invention, since the metal paste printed and applied to the precursor sheet contains a thermoplastic resin, the metal paste has an appropriate viscosity, and is printed and applied to the precursor sheet. In this case, printing and coating can be performed accurately, and a wiring board with fine wiring and high density can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の配線基板を半導体素子収納用パッケー
ジに適用した場合の一実施例を示す断面図である。
FIG. 1 is a sectional view showing an embodiment in which a wiring board of the present invention is applied to a package for housing a semiconductor element.

【図2】本発明の配線基板の製造方法を説明するための
工程毎の断面図である。
FIG. 2 is a cross-sectional view of each process for explaining the method for manufacturing a wiring board of the present invention.

【符号の説明】[Explanation of symbols]

1・・・絶縁基体 2・・・配線導体 11・・・前駆体シート 12・・・金属ペースト DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Wiring conductor 11 ... Precursor sheet 12 ... Metal paste

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】60乃至95重量%の無機絶縁物粉末と5
乃至40重量%の熱硬化性樹脂とから成り、前記無機絶
縁物粉末を前記熱硬化性樹脂により結合して成る絶縁基
体に、金属粉末を熱硬化樹脂及び熱可塑性樹脂により結
合した配線導体を被着させて成ることを特徴とする配線
基板。
An inorganic insulating powder of 60 to 95% by weight and 5
To 40% by weight of a thermosetting resin, and a wiring conductor formed by bonding the metal powder with a thermosetting resin and a thermoplastic resin to an insulating substrate formed by bonding the inorganic insulating powder with the thermosetting resin. A wiring board characterized by being attached.
【請求項2】前記配線導体に含有される熱硬化性樹脂と
熱可塑性樹脂との合計量が配線導体の全量に対し5乃至
30重量%であることを特徴とする請求項1に記載の配
線基板。
2. The wiring according to claim 1, wherein the total amount of the thermosetting resin and the thermoplastic resin contained in the wiring conductor is 5 to 30% by weight based on the total amount of the wiring conductor. substrate.
【請求項3】前記配線導体に含有される熱硬化性樹脂と
熱可塑性樹脂の合計量に対する熱可塑性樹脂の配合量が
5乃至90重量%の範囲であることを特徴とする請求項
2に記載の配線基板。
3. The composition according to claim 2, wherein the amount of the thermoplastic resin is in the range of 5 to 90% by weight based on the total amount of the thermosetting resin and the thermoplastic resin contained in the wiring conductor. Wiring board.
【請求項4】熱硬化性樹脂と無機絶縁物粉末とを混合し
て成る前駆体シートを準備する工程と、前記前駆体シー
トを半硬化させる工程と、前記前駆体シートに熱硬性樹
脂と熱可塑性樹脂と金属粉末とを混合して成る金属ペー
ストを所定パターンに印刷する工程と、前記前駆体シー
ト及び金属ペーストを完全に熱硬化させる工程と、から
成ることを特徴とする配線基板の製造方法。
4. A step of preparing a precursor sheet comprising a mixture of a thermosetting resin and an inorganic insulating powder; a step of semi-curing the precursor sheet; A method of printing a metal paste formed by mixing a plastic resin and a metal powder in a predetermined pattern; and a step of completely thermosetting the precursor sheet and the metal paste. .
JP20048796A 1996-07-30 1996-07-30 Wiring board and method of manufacturing the same Expired - Fee Related JP3393760B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20048796A JP3393760B2 (en) 1996-07-30 1996-07-30 Wiring board and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20048796A JP3393760B2 (en) 1996-07-30 1996-07-30 Wiring board and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH1050890A true JPH1050890A (en) 1998-02-20
JP3393760B2 JP3393760B2 (en) 2003-04-07

Family

ID=16425141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20048796A Expired - Fee Related JP3393760B2 (en) 1996-07-30 1996-07-30 Wiring board and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3393760B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163364A (en) * 1996-11-28 1998-06-19 Kyocera Corp Wiring board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163364A (en) * 1996-11-28 1998-06-19 Kyocera Corp Wiring board

Also Published As

Publication number Publication date
JP3393760B2 (en) 2003-04-07

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