[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPH1050525A - Impedance element and manufacture thereof - Google Patents

Impedance element and manufacture thereof

Info

Publication number
JPH1050525A
JPH1050525A JP8215342A JP21534296A JPH1050525A JP H1050525 A JPH1050525 A JP H1050525A JP 8215342 A JP8215342 A JP 8215342A JP 21534296 A JP21534296 A JP 21534296A JP H1050525 A JPH1050525 A JP H1050525A
Authority
JP
Japan
Prior art keywords
bobbin
resistance
impedance
circuit
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8215342A
Other languages
Japanese (ja)
Inventor
Mitsuo Tamura
光男 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP8215342A priority Critical patent/JPH1050525A/en
Publication of JPH1050525A publication Critical patent/JPH1050525A/en
Pending legal-status Critical Current

Links

Landscapes

  • Coils Or Transformers For Communication (AREA)

Abstract

PROBLEM TO BE SOLVED: To facilitate the impedance value control at a specified high-frequency region by parallel connection of a conductive film on the bobbin surface to both ends of a winding. SOLUTION: A polyvinyl alcohol binder is compounded with a titania-based ceramic powder and granulated by a spray dryer to produce a press-molding powder. This powder is mechanically pressed to form an I-shaped ceramic bobbin 1, and it is baked in air. A Ta film is formed on the surface of the bobbin by the sputtering to make it conductive, an Ag paste is applied to both ends of the bobbin and baked in the air to form Ag-baked terminals 2. The bobbin 1 is heat treated in a mixed gas of N and H in an annular furnace, to reduce the bobbin surface. A covered conductor 3 is wound round the bobbin 1 and both ends thereof are soldered 4 to the terminals 2. Thus it is possible to easily control the impedance value at a specified high-frequency region.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、信号回路内のノイ
ズ吸収を目的にし、信号波の歪みや遅延の少ない積層型
インピーダンス素子及びその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer impedance element for reducing noise in a signal circuit and reducing signal wave distortion and delay, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、電子機器のEMI対策の手法とし
て、信号系にインピーダンス素子を直列に挿入しノイズ
を遮断することが一般的に行われている。
2. Description of the Related Art In recent years, as a measure against EMI of electronic equipment, it has been generally practiced to insert an impedance element in series in a signal system to cut off noise.

【0003】また、パワーアンプ等の電源ライン系に対
しても、インピーダンス素子を直列に挿入してアクチブ
素子から信号系のノイズが電源ラインに漏洩することを
抑制することも行われている。
[0003] In a power supply line system such as a power amplifier, an impedance element is inserted in series to suppress the leakage of signal system noise from the active element to the power supply line.

【0004】しかしながら、インピーダンス素子による
EMI対策は、リアクタンス成分が信号波形に歪みを与
えたり、位相の遅れを生じさせるマイナスの効果も認め
られる。
However, the countermeasure against EMI by the impedance element has a negative effect that a reactance component causes distortion of a signal waveform or causes a phase delay.

【0005】インピーダンス素子のインピーダンスZa
は、実数部の抵抗成分Raと虚数部のリアクタンス成分
Xaの合成であり、Ra+jXaの式で表される。ノイズ
吸収に有効で、歪みや位相遅れを生じさせない理想的な
インピーダンス素子は、ノイズ成分を有する特定の高周
波領域で実数部の抵抗成分Raと虚数部のリアクタンス
成分Xaは、小さな値を示す周波数特性を有するもので
ある。
The impedance Za of the impedance element
Is a combination of the real-valued resistance component Ra and the imaginary-part reactance component Xa, and is expressed by the equation Ra + jXa. An ideal impedance element that is effective for noise absorption and does not cause distortion or phase lag has a small value in the real part resistance component Ra and the imaginary part reactance component Xa in a specific high-frequency region having a noise component. It has.

【0006】[0006]

【発明が解決しようとする課題】ノイズ吸収に作用する
高周波領域での抵抗値は、また使用される回路によって
特定の値が要求される。今日、この目的で用いられてい
る素子は、所望の周波数特性に近づける手段としては、
磁性材料の持つ固有の損失の周波数特性及び形成される
スパイラルコイルの巻数の調整等によって実現されてい
るが、フェライトのような材料の持つ損失特性は自由度
が低く、また、これらの部品は、今日、殆どがSMD部
品化されており、形状寸法に関する制約が多いため、目
的の周波数特性が必ずしも得られないことが問題となっ
ている。
The resistance value in the high-frequency region that acts on noise absorption requires a specific value depending on the circuit used. The elements used for this purpose today are a means to achieve the desired frequency response,
It is realized by adjusting the frequency characteristic of the inherent loss of the magnetic material and the number of turns of the formed spiral coil, etc. Today, most are SMD parts, and there are many restrictions on the shape and size. Therefore, there is a problem that a desired frequency characteristic cannot always be obtained.

【0007】本発明の課題は、特定の高周波領域でイン
ピーダンスの値を目的の値に容易に制御できるインピー
ダンス素子及びその製造方法を提供することにある。
An object of the present invention is to provide an impedance element capable of easily controlling an impedance value to a target value in a specific high-frequency region and a method of manufacturing the same.

【0008】[0008]

【課題を解決するための手段】本発明は、非磁性セラミ
ックスを成形、焼成してなるボビンに巻線を施してなる
インダクタンス素子において、前記ボビンの表面に形成
された導電性物質からなる皮膜と、前記巻線の両端と並
列に結線したことを特徴とするインピーダンス素子であ
る。
SUMMARY OF THE INVENTION The present invention relates to an inductance element formed by winding and winding a non-magnetic ceramic on a bobbin formed by molding and sintering, wherein a film made of a conductive substance formed on the surface of the bobbin is provided. , An impedance element connected in parallel with both ends of the winding.

【0009】又、本発明は、上記皮膜の形成手段として
ボビンの表面を部分的に還元させて所定の導電率を有す
る層を形成することを特徴とするインピーダンス素子の
製造方法である。
Further, the present invention is a method for producing an impedance element, characterized in that the surface of a bobbin is partially reduced to form a layer having a predetermined conductivity as a means for forming the film.

【0010】[0010]

【発明の実施の形態】本発明の実施の形態について図面
を用いて説明する。
Embodiments of the present invention will be described with reference to the drawings.

【0011】図1は、インダクタンスLと抵抗Rの並列
回路を示している。この回路の端子間のインピーダンス
は、式で与えられる。
FIG. 1 shows a parallel circuit of an inductance L and a resistance R. The impedance between the terminals of this circuit is given by the equation:

【0012】 Z=(ω22R+jωLR)/(R2+ω22)・・・・・・・Z = (ω 2 L 2 R + jωLR) / (R 2 + ω 2 L 2 )

【0013】本発明のインピーダンス素子では、非磁性
セラミックを成形、焼成したボビンに巻線を施したイン
ダクタンス素子を形成し、前記ボビンの表面に抵抗素子
を形成して、前記巻線の両端と抵抗素子とを並列に結線
して複合素子とすることにより、目的の周波数特性を得
ることができる。
In the impedance element according to the present invention, an inductance element is formed by winding a non-magnetic ceramic on a bobbin, and a resistance element is formed on a surface of the bobbin. By connecting the elements in parallel to form a composite element, a desired frequency characteristic can be obtained.

【0014】前記回路のインダクタンスLの値を1μ
H、または2μHとし、前記回路の抵抗Rを500Ωと
した場合、両端子間のインピーダンスZ1及びその実数
部の抵抗成分R1、虚数部のリアクタンス成分X1の周波
数特性を各々順にA1,B1,C1,D1,E1,F1の曲線
として図2に示す。
The value of the inductance L of the circuit is 1 μm.
H or 2 μH and the resistance R of the circuit is set to 500Ω, the frequency characteristics of the impedance Z1 between both terminals, the resistance component R1 of the real part thereof, and the reactance component X1 of the imaginary part are A1, B1, C1, and C1, respectively. FIG. 2 shows the curves of D1, E1, and F1.

【0015】A1は、回路の抵抗Rが500Ωで、回路
のインダクタンスLが1μHの時のインピーダンスZ1
の周波数特性を示す。B1は、回路の抵抗Rが500Ω
で、回路のインダクタンスLが1μHの時の実数部の抵
抗成分R1の周波数特性を示す。C1は、回路の抵抗Rが
500Ωで、回路のインダクタンスLが1μHの時の虚
数部のリアクタンス成分X1の周波数特性を示す。D1
は、回路の抵抗Rが500Ωで、回路のインダクタンス
Lが2μHの時のインピーダンスZ1の周波数特性を示
す。E1は、回路の抵抗Rが500Ωで、回路のインダ
クタンスLが2μHの時の実数部の抵抗成分R1の周波
数特性を示す。F1は、回路の抵抗Rが500Ωで、回
路のインダクタンスLが2μHの時の虚数部のリアクタ
ンス成分X1の周波数特性を示す。
A1 is an impedance Z1 when the resistance R of the circuit is 500Ω and the inductance L of the circuit is 1 μH.
FIG. B1 is the resistance R of the circuit is 500Ω
Shows the frequency characteristic of the resistance component R1 of the real part when the inductance L of the circuit is 1 μH. C1 indicates the frequency characteristic of the imaginary part reactance component X1 when the circuit resistance R is 500Ω and the circuit inductance L is 1 μH. D1
Shows the frequency characteristic of the impedance Z1 when the resistance R of the circuit is 500Ω and the inductance L of the circuit is 2 μH. E1 shows the frequency characteristic of the resistance component R1 of the real part when the resistance R of the circuit is 500Ω and the inductance L of the circuit is 2 μH. F1 represents the frequency characteristic of the imaginary part reactance component X1 when the circuit resistance R is 500Ω and the circuit inductance L is 2 μH.

【0016】前記回路のインダクタンスLの値を1μ
H、または2μHとし、前記回路の抵抗Rの値を300
Ωにした時を、同様に順に、両端子間のインピーダンス
Z2,実数部の抵抗成分R2,虚数部のリアクタンス成分
X2の周波数特性を各々順にA2,B2,C2,D2,E2,
F2の曲線として図3に示す。
The value of the inductance L of the circuit is 1 μm.
H or 2 μH, and the value of the resistance R of the circuit is 300
When Ω is set, the frequency characteristics of the impedance Z2 between the two terminals, the resistance component R2 of the real part, and the reactance component X2 of the imaginary part are similarly A2, B2, C2, D2, E2,
FIG. 3 shows the curve of F2.

【0017】A2は、回路の抵抗Rが300Ωで、回路
のインダクタンスLが1μHの時のインピーダンスZ2
の周波数特性を示す。B2は、回路の抵抗Rが300Ω
で、インダクタンスLが1μHの時の実数部の抵抗成分
R2の周波数特性を示す。C2は、回路の抵抗Rが300
Ωで、回路のインダクタンスLが1μHの時の虚数部の
リアクタンス成分X2の周波数特性を示す。D2は、回路
の抵抗Rが300Ωで、回路のインダクタンスLが2μ
Hの時のインピーダンスZ2の周波数特性を示す。E2
は、回路の抵抗Rが300Ωで、回路のインダクタンス
Lが2μHの時の実数部の抵抗成分R2の周波数特性を
示す。F2は、回路の抵抗Rが300Ωで、回路のイン
ダクタンスLが2μHの時の虚数部のリアクタンス成分
X2の周波数特性を示す。
A2 is an impedance Z2 when the circuit resistance R is 300Ω and the circuit inductance L is 1 μH.
FIG. B2 indicates that the resistance R of the circuit is 300Ω.
Shows the frequency characteristic of the resistance component R2 of the real part when the inductance L is 1 μH. C2 is a circuit resistance R of 300
Ω indicates the frequency characteristic of the imaginary part reactance component X2 when the circuit inductance L is 1 μH. D2 has a circuit resistance R of 300Ω and a circuit inductance L of 2μ.
The frequency characteristic of the impedance Z2 at the time of H is shown. E2
Shows the frequency characteristic of the resistance component R2 of the real part when the circuit resistance R is 300Ω and the circuit inductance L is 2 μH. F2 indicates the frequency characteristic of the imaginary part reactance component X2 when the circuit resistance R is 300Ω and the circuit inductance L is 2 μH.

【0018】図2及び図3から明らかなように、低周波
領域では、インピーダンス値の低いコイル部分のインピ
ーダンス値が支配的となり、2端子間のインピーダンス
値を決めるが、高周波領域になり、インダクタンスのイ
ンピーダンス値が回路の抵抗を越えるようになってくる
と、2端子間のインピーダンス値は実数部の抵抗成分が
支配的となり、実数部の抵抗成分の値に収束してしま
う。
As is clear from FIGS. 2 and 3, in the low frequency region, the impedance value of the coil portion having a low impedance value is dominant, and the impedance value between the two terminals is determined. When the impedance value exceeds the resistance of the circuit, the impedance value between the two terminals is dominated by the resistance component of the real part, and converges to the value of the resistance component of the real part.

【0019】また、インダクタンス値によって、インピ
ーダンス値の周波数特性で、インピーダンス値の立ち上
がりに変化を与えることも可能である。
It is also possible to change the rise of the impedance value with the frequency characteristic of the impedance value depending on the inductance value.

【0020】ところで、インピーダンス素子をフェライ
トのような磁性材料をコアに用いて作製すると、周波数
の上昇に伴いリアクタンス成分は減少し、同時に損失が
増大する。
When the impedance element is manufactured by using a magnetic material such as ferrite for the core, the reactance component decreases as the frequency increases, and the loss increases at the same time.

【0021】結果として、インピーダンス値の周波数特
性は、前述の純インダクタンスLと抵抗Rの並列回路の
周波数特性に似た変化を示す。ところが、所望の周波数
特性を得る場合、周波数特性を制御するものは、材料の
損失特性が主で、他はスパイラルコイルの巻数、形状調
整によるインダクタンス値程度で自由度が少なく、必ず
しも目的の周波数特性が得られる訳ではない。
As a result, the frequency characteristic of the impedance value shows a change similar to the frequency characteristic of the above-described parallel circuit of the pure inductance L and the resistor R. However, in order to obtain a desired frequency characteristic, the frequency characteristic is controlled mainly by the loss characteristic of the material, and the others are less in the degree of freedom due to the number of turns of the spiral coil and the inductance value by adjusting the shape. Is not necessarily obtained.

【0022】しかしながら、このインダクタンス素子と
して磁性材料を用いない、いわゆる空芯のインダクタン
スと並列に抵抗を結線した場合、高周波領域でのインピ
ーダンスの実数部の成分は、抵抗と並列に接続すること
による効果を示し、インピーダンスの実数部の成分を制
御することが可能で、高周波領域の抵抗値はきわめて容
易にコントロールすることが可能になる。
However, when a resistor is connected in parallel with the so-called air-core inductance without using a magnetic material as the inductance element, the component of the real part of the impedance in the high-frequency region has the effect of being connected in parallel with the resistor. And the component of the real part of the impedance can be controlled, and the resistance value in the high frequency region can be controlled very easily.

【0023】しかし、抵抗素子を新たに付加すること
は、部品の小型化や表面実装作業の場合、工数増加の点
で好ましくない。インダクタンス素子のボビンの表面に
抵抗素子を形成することが可能であれば、きわめて実用
性に富むインピーダンス素子の提供が可能になる。
However, it is not preferable to newly add a resistance element in terms of increasing the number of steps in downsizing components and performing surface mounting work. If a resistance element can be formed on the surface of a bobbin of an inductance element, an extremely practical impedance element can be provided.

【0024】[0024]

【実施例】本発明の実施例について説明する。An embodiment of the present invention will be described.

【0025】セラミック粉末として、チタニア系の粉末
を用意した。この粉末にポリビニルアルコール系のバイ
ンダを配合し、スプレードライヤーで造粒し、プレス成
型用の粉末を作製した。
As a ceramic powder, a titania-based powder was prepared. A polyvinyl alcohol-based binder was mixed with the powder, and the mixture was granulated with a spray drier to prepare a powder for press molding.

【0026】図4に示すように、これを機械式プレスで
断面がI型のセラミックのボビン1を成形し、この成形
体を1350℃、2時間の大気中焼成を行った。この焼
結体の両端に銀ペーストを塗布し、500℃、30分の
焼き付けを大気中で行い、銀焼き付けの端子2を形成し
た。次に、このボビン1に50μm径の被覆導線3を1
00ターン巻き、導線3の両端を端子2に半田4を施し
たものを試料Aとした。
As shown in FIG. 4, a ceramic bobbin 1 having an I-shaped cross section was formed by a mechanical press, and the formed body was fired in the atmosphere at 1350 ° C. for 2 hours. Silver paste was applied to both ends of this sintered body, and baking was performed at 500 ° C. for 30 minutes in the air to form silver-baked terminals 2. Next, a 50 μm-diameter covered conductive wire 3 was
A sample A was obtained by winding the wire for 00 turns and applying the solder 4 to the terminal 2 at both ends of the conductor 3.

【0027】次に、ボビンの表面にタンタルの皮膜をス
パッタリングし導電性を持たせたものについて端子間の
電気抵抗を測定したところ、端子間で平均300Ωの抵
抗を示した。このボビンに試料Aと同様の巻線を施した
ものを試料Bとした。
Next, when a tantalum film was sputtered on the surface of the bobbin to make it conductive, the electric resistance between the terminals was measured, and an average resistance of 300Ω was shown between the terminals. The bobbin provided with the same winding as that of the sample A was used as a sample B.

【0028】更に、銀焼き付け上がりのボビンを環状炉
内で窒素と数%の水素の混合ガスを数リットル/分の流
量で流しながら、800℃で、30分と120分、熱処
理を行った。
Further, the bobbins after silver baking were heat-treated at 800 ° C. for 30 minutes and 120 minutes while flowing a mixed gas of nitrogen and several percent hydrogen at a flow rate of several liters / minute in an annular furnace.

【0029】それぞれの両端の電気抵抗を測定したとこ
ろ、平均値が780Ωと510Ωの抵抗値をそれぞれ示
した。これらについても、試料Aと同様に、巻線を施
し、試料CおよびDとした。
When the electric resistance at both ends was measured, the average values showed resistance values of 780 Ω and 510 Ω, respectively. These were also wound in the same manner as Sample A, and Samples C and D were obtained.

【0030】各々について、インピーダンスブリッヂで
100kHzのインダクタンスを測定したところ、ほぼ
同様に、0.9〜1.2μHの値を示した。
When the inductance at 100 kHz was measured for each of them using an impedance bridge, values of 0.9 to 1.2 μH were shown in almost the same manner.

【0031】上記のようにして作製した積層インダクタ
ーのインピーダンスの周波数特性を、YHP製インピー
ダンスアナライザーHP4191Aを用いて評価した。
試料A、試料B、試料C、試料Dの結果をそれぞれ図
5、図6、図7、および図8に示す。
The frequency characteristics of the impedance of the multilayer inductor manufactured as described above were evaluated using a YHP impedance analyzer HP4191A.
The results of Sample A, Sample B, Sample C, and Sample D are shown in FIGS. 5, 6, 7, and 8, respectively.

【0032】図5に示すように、ZAは、抵抗素子を付
加しない時の試料AのインピーダンスZAの周波数特性
を示す。RAは、抵抗素子を付加しない時の試料Aの実
数部の抵抗成分RAの周波数特性を示す。XAは、抵抗素
子を付加しない時の試料Aの虚数部のリアクタンス成分
XAの周波数特性を示す。
As shown in FIG. 5, ZA indicates the frequency characteristic of the impedance ZA of the sample A when no resistance element is added. RA indicates the frequency characteristic of the resistance component RA of the real part of the sample A when no resistance element is added. XA indicates the frequency characteristic of the reactance component XA of the imaginary part of the sample A when no resistance element is added.

【0033】図6に示すよに、ZBは、試料Bのインピ
ーダンスZBの周波数特性を示す。RBは、試料Bの実数
部の抵抗成分RBの周波数特性を示す。XBは、試料Bの
虚数部のリアクタンス成分XBの周波数特性を示す。
As shown in FIG. 6, ZB indicates the frequency characteristic of the impedance ZB of the sample B. RB indicates the frequency characteristic of the resistance component RB of the real part of the sample B. XB indicates the frequency characteristic of the reactance component XB of the imaginary part of the sample B.

【0034】図7に示すよに、ZCは、試料Cのインピ
ーダンスZCの周波数特性を示す。RCは、試料Cの実数
部の抵抗成分RCの周波数特性を示す。XCは、試料Cの
虚数部のリアクタンス成分XCの周波数特性を示す。
As shown in FIG. 7, ZC indicates a frequency characteristic of the impedance ZC of the sample C. RC indicates the frequency characteristic of the resistance component RC of the real part of the sample C. XC indicates the frequency characteristic of the reactance component XC of the imaginary part of the sample C.

【0035】又、図8に示すよに、ZDは、試料Dのイ
ンピーダンスZDの周波数特性を示す。RDは、試料Dの
実数部の抵抗成分RDの周波数特性を示す。XDは、試料
Dの虚数部リアクタンス成分XDの周波数特性を示す。
As shown in FIG. 8, ZD indicates the frequency characteristic of the impedance ZD of the sample D. RD indicates the frequency characteristic of the resistance component RD of the real part of the sample D. XD indicates the frequency characteristic of the imaginary part reactance component XD of the sample D.

【0036】図5において、抵抗素子を付加しないこと
に相当する試料Aの高周波数領域(>50MHz)での
インピーダンス値は、リアクタンス成分の比率が高く、
ノイズ吸収特性の面では好ましい周波数特性を示してい
ない。
In FIG. 5, the impedance value of the sample A in the high frequency region (> 50 MHz), which corresponds to the case where no resistive element is added, has a high ratio of the reactance component.
No favorable frequency characteristics are shown in terms of noise absorption characteristics.

【0037】一方、図6、図7、図8に示す試料B、試
料C、および試料Dの場合、高周波数領域でのインピー
ダンス値は、ほぼ付加した抵抗素子の値に収束し、これ
らの値によって制御されている。
On the other hand, in the case of the samples B, C, and D shown in FIGS. 6, 7, and 8, the impedance values in the high frequency region almost converge to the values of the added resistive elements. Is controlled by

【0038】また、インピーダンスの虚数部成分は、高
周波領域で著しく減衰し、ほぼ実数部の成分のみとな
り、ノイズ吸収及び信号への位相遅れまたは歪みの発生
に対して好ましい周波数特性を示している。
Further, the imaginary part of the impedance is remarkably attenuated in the high frequency region and becomes almost only the real part, showing favorable frequency characteristics with respect to noise absorption and occurrence of phase delay or distortion to a signal.

【0039】このことから、作製上きわめて容易に高周
波領域でのインピーダンス値の周波数特性を制御できる
ことが証明された。更に、試料C、試料Dから還元雰囲
気中の熱処理によって素子表面に導電層が形成され、こ
れが抵抗素子として利用できること、更に熱処理の条件
によって抵抗値が制御できることも確認できた。
From this, it has been proved that the frequency characteristic of the impedance value in the high frequency region can be controlled extremely easily in manufacturing. Further, it was confirmed that a conductive layer was formed on the element surface by heat treatment in a reducing atmosphere from Samples C and D, and that this could be used as a resistance element, and that the resistance value could be controlled by heat treatment conditions.

【0040】[0040]

【発明の効果】以上、説明したとおり、本発明によれ
ば、形状寸法に関して制約の多いSMD部品であるイン
ピーダンス素子及びその製造方法について、特定の高周
波領域でインピーダンス値を目的の値に容易に制御でき
る素子及びその製造方法を提供することが可能になっ
た。
As described above, according to the present invention, it is possible to easily control an impedance value to a target value in a specific high-frequency region for an impedance element, which is an SMD component having many restrictions on the shape and size, and a method for manufacturing the same. It has become possible to provide a device that can be manufactured and a method for manufacturing the same.

【図面の簡単な説明】[Brief description of the drawings]

【図1】インダクタンスLと抵抗Rからなる並列回路を
示す図。
FIG. 1 is a diagram showing a parallel circuit including an inductance L and a resistance R.

【図2】回路のインダクタンスLの値を1μH、又は2
μHとし、回路の抵抗Rの値を500Ωとした場合、そ
の各々の両端子間のインピーダンスZ1、及びその実数
部の抵抗成分R1、虚数部のリアクタンス成分X1の周波
数特性を示す図。
FIG. 2 shows that the value of the inductance L of the circuit is 1 μH or 2 μH.
FIG. 9 is a diagram showing the frequency characteristics of the impedance Z1 between both terminals of the circuit, the resistance component R1 of the real part thereof, and the reactance component X1 of the imaginary part thereof when μH is set and the value of the resistance R of the circuit is 500Ω.

【図3】回路のインダクタンスLの値を1μH、または
2μHとし、回路の抵抗Rの値を300Ωとした場合、
その各々の両端子間のインピーダンスZ2、その実数部
の抵抗成分R2、虚数部のリアクタンス成分X2の周波数
特性を示す図。
FIG. 3 shows a case where the value of the inductance L of the circuit is 1 μH or 2 μH and the value of the resistance R of the circuit is 300Ω.
The figure which shows the frequency characteristic of impedance Z2 between each both terminals, the resistance component R2 of the real part, and the reactance component X2 of the imaginary part.

【図4】試料Aを示す斜視図。FIG. 4 is a perspective view showing a sample A.

【図5】試料Aの周波数特性を示す図。FIG. 5 is a diagram illustrating frequency characteristics of a sample A;

【図6】試料Bの周波数特性を示す図。FIG. 6 is a diagram illustrating frequency characteristics of a sample B;

【図7】試料Cの周波数特性を示す図。FIG. 7 is a diagram illustrating frequency characteristics of a sample C;

【図8】試料Dの周波数特性を示す図。FIG. 8 is a diagram illustrating frequency characteristics of a sample D;

【符号の説明】[Explanation of symbols]

1 ボビン 2 端子 3 導線 4 半田 1 bobbin 2 terminal 3 conductor 4 solder

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 非磁性セラミックスを成形、焼成してな
るボビンに巻線を施してなるインダクタンス素子におい
て、前記ボビンの表面に形成された導電性物質からなる
皮膜と、前記巻線の両端と並列に結線したことを特徴と
するインピーダンス素子。
1. An inductance element in which a winding is applied to a bobbin formed by molding and firing a non-magnetic ceramic, wherein a coating made of a conductive substance formed on a surface of the bobbin is parallel to both ends of the winding. An impedance element characterized by being connected to.
【請求項2】 請求項1記載の皮膜の形成手段としてボ
ビンの表面を部分的に還元させて、所定の導電率を有す
る層を形成することを特徴とするインピーダンス素子の
製造方法。
2. A method for manufacturing an impedance element according to claim 1, wherein the surface of the bobbin is partially reduced to form a layer having a predetermined conductivity.
JP8215342A 1996-07-26 1996-07-26 Impedance element and manufacture thereof Pending JPH1050525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8215342A JPH1050525A (en) 1996-07-26 1996-07-26 Impedance element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8215342A JPH1050525A (en) 1996-07-26 1996-07-26 Impedance element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH1050525A true JPH1050525A (en) 1998-02-20

Family

ID=16670722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8215342A Pending JPH1050525A (en) 1996-07-26 1996-07-26 Impedance element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH1050525A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0962946A2 (en) * 1998-06-04 1999-12-08 Siemens Aktiengesellschaft Österreich Standing mounted coil for printed circuit boards

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0962946A2 (en) * 1998-06-04 1999-12-08 Siemens Aktiengesellschaft Österreich Standing mounted coil for printed circuit boards
EP0962946A3 (en) * 1998-06-04 2000-03-08 Siemens Aktiengesellschaft Österreich Standing mounted coil for printed circuit boards

Similar Documents

Publication Publication Date Title
US6853267B2 (en) Noise filter and electronic apparatus comprising this noise filter
JP3116696B2 (en) Inductor
CN101441921B (en) Inducer and method of manufacturing the same
JPS5848410A (en) Manufacture of inductor
WO2005029517A1 (en) Bead noise filter
JPH1050525A (en) Impedance element and manufacture thereof
CN101441920B (en) Inducer and method of manufacturing the same
JPH09326317A (en) Microwave inductor coil
JPH1050523A (en) Impedance device and its manufacture
JP3297429B2 (en) Laminated chip beads
JPH09148118A (en) Laminated compressed powder magnetic core
JPH03106005A (en) Manufacture of chip type lr filter
JPH03106007A (en) Manufacture of chip type lr filter
JP2705706B2 (en) Manufacturing method of laminated LR filter
JPH0353606A (en) Manufacture of laminated lr filter
CN201285697Y (en) Inducer
JPH03106004A (en) Manufacture of chip type lr filter
JPH0210607A (en) Conducting paste and thick film component using it
JPH03106006A (en) Manufacture of chip type lr filter
JPH0353607A (en) Manufacture of laminated lr filter
JP2000235921A (en) Composite parts and its manufacture
JPH04239107A (en) Electromagnetic interference preventive element
CN201285696Y (en) Inducer
JPH0121609B2 (en)
JP3948269B2 (en) Coil parts manufacturing method