JPH1038916A - Probe device and electrically connecting method for minute region - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the damage of a substance to be connected. SOLUTION: A prove device has a cantilever 2, and makes electric connection by contact to a minute region of a substance 1 to be connected. The cantilever 2 has a lever section 2b having a probe 2a in the tip-side region, and a supporting substance 2c for supporting the lever section 2b. The tip of the probe 2a has conductivity. The cantilever 2 has a conductive path reaching the supporting substance 2c side from the tip of the probe 2a. If the tip of the probe 2a comes in contact with the substance 1 to be connected to make an electric connection to the substance 1 to be connected, the lever section 2b bends.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe apparatus for making electrical connection by contact to a minute area of a body to be connected such as a semiconductor device or a micro machine.

[0002]

2. Description of the Related Art Conventionally, in order to supply power (supply electricity) to a minute area of a connected body such as a semiconductor device or a micromachine or to take out a signal from the minute area, a sharp rod-shaped metal is used. A probe device using the needle is provided. In this conventional probe device, the needle is attached to a three-dimensional manipulator or the like, and the tip of the needle is brought into contact with a desired minute area.

[0003]

However, the conventional probe device has a drawback that when the tip of the needle is brought into contact with the connected object, the connected object is damaged because the rigidity of the needle is high. Was. In addition, since the contact pressure of the conventional probe device needle with respect to the connected object could not be detected, a desired constant pressure could not be obtained. For this reason, the magnitude of the contact resistance between the tip of the needle and the connected object varies, and for example, the accuracy of measurement of the resistance value between a plurality of desired portions of the connected object deteriorates, There is a drawback that the accuracy of the power supply amount to the connection body is deteriorated.

Further, with the miniaturization of semiconductor devices, micro machines, and the like, the tip of a portion in contact with a device to be connected is sufficiently small, and the distance between contact points of a plurality of probe devices with the device to be connected is reduced. It is desirable to be able to get close enough.

The present invention has been made in view of the above circumstances, and has as its object to provide a probe device that can prevent damage to a connected object.

It is another object of the present invention to provide a probe device capable of maintaining a constant contact resistance with a connected object.

Further, the present invention provides a probe device in which the tip of a portion in contact with a connected object is sufficiently small and the distance between contact points of the plurality of probe devices with the connected object can be sufficiently reduced. Yet another object is to provide

[0008]

Conventionally, in the field of a probe device for making electrical connection by contact to a minute area of a connected object, as described above, it is naturally assumed that a metal needle is used. It has been considered, and even the existence of the above-mentioned problem has not been regarded as a problem.

The present inventor has paid attention to such a conventionally overlooked problem, and has developed a cantilever manufactured using a semiconductor manufacturing technique used in the field of a scanning probe microscope such as an atomic force microscope. I came up with the idea of applying it. Note that the cantilever of the scanning probe microscope is a force-displacement converter that converts a force (eg, an atomic force, a magnetic force, an electrostatic force, etc.) acting by an interaction between the probe of the cantilever and the sample surface into a displacement. The principle itself is essentially completely unrelated to the principle of a probe device for making electrical connection by contact to a minute area of a connected object, and both are completely different technical fields.

The present invention has been made on the basis of the investigation of the problems of the present inventor and the idea of applying a completely different technology in the technical field.

According to a first aspect of the present invention, there is provided a probe device for electrically connecting a minute region of a body to be connected by contact with the lever portion, the lever portion having a probe in a tip side region, and the lever portion. A cantilever having a support for supporting the tip, the tip of the probe has conductivity,
The cantilever further has a conductive path from the tip of the probe to the support.

According to the first aspect, the cantilever has a conductive path at the tip of the probe and has a conductive path from the tip of the probe to the support. If the probe and the power supply circuit are electrically connected, the measurement circuit and the power supply circuit are electrically connected to a minute region of the connected body by bringing the tip of the probe into contact with the connected body. be able to. Unlike the case of a sharp rod-shaped metal needle, even when the tip of the probe of the cantilever is brought into contact with the connected object, the lever portion of the cantilever bends. Will not join. For this reason, damage to the connected object can be prevented.

[0013] A probe device according to a second aspect of the present invention is the probe device according to the first aspect, further comprising a flexure detecting means for detecting flexure of the lever portion.

The start of contact of the probe of the cantilever with the connected object and the contact pressure on the connected object can be known from the bending of the lever portion. Therefore, if the probe device has the deflection detecting means as in the second aspect, the relative movement of the probe for contact with the connected object is controlled based on the detection signal. This makes it possible to minimize the force applied to the connected object even in the course of the movement for contact, and to adjust the contact pressure of the probe to a desired pressure finally. can do. For this reason, damage to the connected object can be prevented more effectively, and the contact resistance between the tip of the probe and the connected object can always be kept constant, so that accurate measurement and power supply can be performed. Becomes possible.

A probe device according to a third aspect of the present invention is the probe device according to the second aspect, wherein the lever portion has the deflection detecting means.

In the second embodiment, the lever itself does not need to have the deflection detecting means. For example, as the deflection detecting means, a detecting means (optical lever method) which is well known in an atomic force microscope or the like is used. A light emitting device that irradiates the lever portion with light such as a laser beam, a photodetector such as a two-segment photodiode that detects the position of reflected light from the lever portion, or a detection unit using an optical interference method may be employed. However, if such a detecting means is adopted, it takes time and effort to align the optical system. Not only does it occupy a considerable amount of space, but also it is difficult to move the cantilever with the connected object fixed. When making an electrical connection (for example, when measuring a resistance value between two points of a connected body), it is impossible to reduce the interval between these points, or the electrical connection of the connected body is not possible. Inconveniences such as restriction on the position of the place occur. In this regard, in the third aspect, such a disadvantage does not occur because the lever portion of the cantilever has the deflection detecting means.

The probe device according to a fourth aspect of the present invention is the probe device according to the third aspect, wherein the deflection detecting means is configured to change the resistance value according to the pressure applied to the lever portion. And a thin film having piezoelectric or electrostrictive characteristics formed on the body or the lever portion. The fourth embodiment is a specific example in a case where the lever portion of the cantilever has a deflection detecting means.

The probe device according to a fifth aspect of the present invention is the probe device according to any one of the second to fourth aspects, wherein the moving means for moving the cantilever relatively to the connected object; And control means for controlling the moving means based on a detection signal from the deflection detecting means such that a contact pressure of the probe with the minute area becomes a desired pressure.

According to the fifth aspect, the contact pressure of the probe is set to a desired pressure, so that the contact resistance between the tip of the probe and the connected object can be kept constant, and the accuracy can be improved. Measurement and power supply are possible.

A probe apparatus according to a sixth aspect of the present invention is the probe apparatus according to any one of the first to fifth aspects, wherein the cantilever is manufactured by using a semiconductor manufacturing technique.

According to the sixth aspect, since the cantilever is manufactured by using a semiconductor manufacturing technique like a cantilever such as an atomic force microscope, it is possible to make the tip of the probe sufficiently small. In addition, the size of the lever portion of the cantilever can be reduced, and the distance between the contact points of the plurality of probe devices with the connected object can be sufficiently reduced.

According to a seventh aspect of the present invention, there is provided an electrical connection method comprising: a cantilever having a lever having a probe in a tip side region; and a support for supporting the lever. Is conductive, using a cantilever having a conductive path from the tip of the probe to the side of the support, by contacting the tip of the probe to a minute area of the connected body, by contact with the minute area The electrical connection is made.

According to the seventh aspect, since the cantilever is used, similarly to the first aspect, damage to the connected object can be prevented.

An electrical connection method according to an eighth aspect of the present invention is the electrical connection method according to the seventh aspect, wherein the bending of the lever portion is detected, and
The cantilever is moved relatively to the connected object so that the contact pressure of the probe becomes a desired pressure.

According to the eighth aspect, similarly to the fifth aspect, the contact resistance between the tip of the probe and the connected object can be always kept constant, and accurate measurement and power supply can be performed. Becomes possible.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a probe device and a method for electrically connecting a minute area according to the present invention will be described with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing a probe device according to an embodiment of the present invention. The probe device according to the present embodiment is for making an electrical connection by contact to a minute region of the connected body 1 such as a semiconductor device or a micromachine, and includes a cantilever 2. The cantilever 2 has a lever portion 2b having a probe 2a in a tip side region, and a support 2c for supporting the lever portion 2b. The tip of the probe 2a has conductivity. Further, the cantilever 2 is moved from the tip of the probe 2a to the support 2c.
A conductive path to the side. The lever portion 4 is, for example,
It is preferable to have a spring constant of about 0.1 to 100 N / m.

Here, an example of the cantilever 2 will be described.
This will be described with reference to FIG. FIG. 2 is a view showing an example of the cantilever 2, and FIG. 2 (a) is a schematic plan view thereof.
(B) is a schematic sectional view thereof. Note that, for easy understanding, FIG. 2B shows a combination of a cross section taken along line AA in FIG. 2A and a cross section taken along line BB in FIG. 2A. .

In the cantilever 2 according to the present embodiment, as shown in FIG. 2, the lever portion 2b includes a silicon oxide film 21, a silicon layer 22 laminated on the silicon oxide film 21, and an upper surface in the silicon layer 22. A boron diffusion layer 23 formed on the side;
It comprises a silicon oxide film 24 formed on the silicon layer 22 and a silicon oxide film 25 formed on the boron diffusion layer 23, and has a substantially U shape. Boron diffusion layer 23
Is a kind of piezoresistor, and in the present embodiment, the boron diffusion layer 23 forms a resistor whose resistance value changes in accordance with the pressure applied to the lever portion 2b. Therefore, in this example, the boron diffusion layer 23 is
Constitutes a flexure detecting means for detecting the flexure.

In the cantilever 2 according to the present embodiment, the probe 2a is composed of the protruding portion 22a of the silicon layer 22, the portions of the silicon oxide films 24 and 25 on the protruding portion 22a, and the conductive film formed thereon. And a film 26. A wiring pattern 27 electrically connected to the conductive film 26 is formed on the silicon oxide film 25 of the lever portion 2b.

Further, in the cantilever 2 according to the present embodiment,
The support 2 c includes a silicon layer 28, silicon oxide films 21 and 22 extending on the silicon layer 28, portions of the silicon layer 25 and the boron diffusion layer 23, and a silicon oxide film formed on the lower surface of the silicon layer 28. 29 and 30.
The wiring pattern 27 also extends on the support 2c and is connected to an electrode pattern (electrode pad) 31 formed on the silicon oxide film 25 of the support 2c for electrical connection to the outside. In this example, the conductive film 26, the wiring pattern 27, and the electrode pattern form a conductive path from the tip of the probe 2a to the support 2c side. In the silicon oxide film 25, openings 25a and 25b for making electrical connection are formed at portions of the boron diffusion layer 23 extending on the support 2c, and boron diffusion is performed through these openings 25a and 25b. Wiring patterns 32 and 33 are formed on silicon oxide film 25 of support 2c so as to be connected to layer 23, respectively. The wiring patterns 32 and 33 are connected to electrode patterns 34 and 35 formed on the silicon oxide film 25 of the support 2c for electrical connection to the outside, respectively.

In this embodiment, the conductive film 26, the wiring pattern 27 and the electrode pattern 31 are continuously formed of the same conductive material. Similarly, the wiring pattern 32 and the electrode pattern 34 are continuously formed of the same conductive material, and the wiring pattern 33 and the electrode pattern 35 are continuously formed of the same conductive material.

Next, an example of a method for manufacturing the cantilever 2 shown in FIG. 2 will be described with reference to FIGS.
FIG. 3 is a schematic cross-sectional view (combined schematic cross-sectional view corresponding to FIG. 2B) showing an example of a manufacturing process of the cantilever 2 shown in FIG. FIG. 4 is a schematic cross-sectional view (synthesized schematic cross-sectional view corresponding to FIG. 2B) showing a manufacturing process subsequent to the manufacturing process shown in FIG. FIG. 5 is a schematic plan view showing a part of the manufacturing process shown in FIG. 3 and FIG. FIG.
(A) shows the same step as FIG. 3 (c), FIG. 5 (b) shows the same step as FIG. 4 (a), and FIG.
It shows the same step as (c). 3 to 5
, The elements corresponding to the respective elements in FIG. 2 are denoted by the same reference numerals.

First, a silicon oxide film 2 is formed on a silicon substrate 28.
1 is formed, and a laminated substrate 40 in which a silicon layer 22 is formed on the silicon oxide film 21 is prepared (FIG. 3A). As the laminated substrate 40, a wafer commercially available as a so-called SOI substrate can be used. In the laminated substrate 40, a (111) silicon substrate 28 and a (100) silicon layer 22 are used.

Next, after a photoresist is applied on the substrate, the photoresist is patterned to leave only a portion of the photoresist 41 (see FIG. 3B) corresponding to the probe 2a.

Thereafter, the silicon layer 22 is dry-etched using a mixed gas of SF ₆ and C ₂ ClF ₅ . At this time, since the silicon layer 22 is etched while leaving the silicon under the photoresist 41, the lower portion of the photoresist 41 first becomes columnar. However, if the etching is further continued, side etching proceeds, and a needle-like shape is formed. The photoresist 41 is removed, leaving the shaped silicon protrusion 22a. At this point, the etching is stopped (FIG. 3).
(B)).

Next, the silicon layer 22 is formed by a CVD method or the like.
Silicon oxide films 24, 2 are formed on the upper surface and the lower surface of the silicon substrate 28.
9 are formed, and the silicon oxide film 24 is patterned according to the shape of the lever portion 2b by a photolithographic etching method (FIGS. 3C and 5A). Thereafter, the silicon layer 22 is etched away using the silicon oxide film 24 as a mask, leaving only the silicon layer 22 below the silicon oxide film 24 (FIG. 3D).

Next, the silicon oxide film 24 in a desired region corresponding to the boron diffusion layer 23 is removed by photolithography, and the exposed silicon layer 22 is doped with boron. Next, a boron diffusion layer 23 is formed (FIGS. 4A and 5B).

Thereafter, the silicon oxide film 2 is again formed on both surfaces of the substrate in the state shown in FIGS. 4A and 5B by the CVD method or the like.
5 and 30 are formed (FIG. 4B). Next, the silicon oxide film 25 is removed from the lever portion 2b by photolithographic etching.
In addition to patterning according to the shape of the support 2c, openings 25a and 25b for making electrical connection to the boron diffusion layer 23 are formed in the silicon oxide film 25, and the silicon oxide films 29 and 30 are formed in the support 2c. (FIG. 4 (c), FIG. 5 (c)).

Next, on the upper surface of the silicon oxide film 25, gold, platinum,
By patterning a metal layer such as aluminum by a lift-off method or the like, the conductive film 26, the wiring patterns 27, 32, 33 and the electrode patterns 31, 34, 3 are formed.
5 is formed (FIG. 4D).

Finally, the substrate in the state shown in FIG. 4D is immersed in a heated silicon etching solution such as a tetramethylammonium hydroxide solution to elute only unnecessary silicon portions. Thereby, the cantilever 2 shown in FIG. 2 is completed. After that, if necessary, the silicon oxide film 21 in the portion of the lever portion 2b may be removed.

Referring again to FIG. 1, the probe device according to the present embodiment is attached to a three-dimensional manipulator (not shown) as a moving device for moving the cantilever 2 with respect to the connected object 1. That is, in the present embodiment, a cantilever holder 53 made of Markor ceramic is provided at the tip of a metal rod 52 that can be attached to a chuck 51 of a three-dimensional manipulator, and the cantilever 2 is held by the cantilever holder 53. The cantilever holder 53 has a piezoelectric actuator 54 as a fine movement mechanism for moving the cantilever 2 in the direction of arrow X in FIG. 1, and detachably holds the support 2a of the cantilever 2 via the piezoelectric actuator 54. It is configured to be able to. However, depending on the performance of the manipulator, the piezoelectric actuator 5
4 need not necessarily be provided.

Further, as shown in FIG. 1, the probe device according to this embodiment has a resistance value between the electrode patterns 34 and 35 of the cantilever 2 (that is, the boron diffusion layer 2).
3 (the resistance value of the cantilever 2), the detection signal indicates the bending of the lever portion 2b of the cantilever 2, that is, the contact pressure between the tip of the probe 2a of the cantilever 2 and the connected object 1. ) Is generated. As the signal processing unit 55, for example, a Wheatstone bridge biased with a DC voltage can be used.

Further, as shown in FIG. 2, the probe device according to the present embodiment includes an operation unit 56 such as a keyboard,
A control unit 5 for controlling an actuator of the manipulator and a piezoelectric actuator 54 based on a detection signal from the signal processing unit 55 and a command signal from an operation unit 56
7 is provided. The control unit 57 controls the actuator of the manipulator and the piezoelectric actuator 54 according to a command signal from the operation unit 56 such that the tip of the probe 2 a of the cantilever 2 comes into contact with a desired portion of the connected body 1. . At this time, when the detection signal from the signal processing unit 55 changes (that is, when the tip of the probe 2a is
Is started), the operation is switched to the fine movement operation by the piezoelectric actuator 2a to finely move the cantilever. When the detection signal from the signal processing unit 55 reaches a predetermined level (that is, when the contact pressure of the probe 2a becomes a desired pressure), the movement of the cantilever 2 is stopped, and the tip of the probe 2a is stopped. The contact operation to the connected object 1 is terminated.

According to the probe device of the present embodiment, a measuring circuit, a power supply circuit and the like are electrically connected to the electrode pattern 31 of the cantilever 2 in advance. Then, the tip of the probe 2 a of the cantilever 2 is brought into contact with the connected object 1 by the contact operation described above. Since the electrode pattern 31 is connected to the conductive film 26a constituting the tip of the probe 2a via the wiring pattern 27, the measurement circuit, the power supply circuit, and the like can be connected to a desired portion (a minute area) of the body 1 to be connected. Is electrically connected to the So, for example,
As shown in FIG. 1, two probe devices (in FIG. 1, 1
One probe device only shows the cantilever 2), and it is possible to measure the electrical resistance and the like between two points of the connected body 1.

In the present embodiment, the movement of the cantilever is controlled as described above based on the detection signal indicating the deflection of the lever portion 2b of the cantilever 2 (that is, the contact pressure of the probe 2a). Therefore, in the process of moving the cantilever 2 for contact, the force applied to the connected object 1 can be minimized, and the contact pressure of the probe 2a is finally set to a desired pressure. be able to. Therefore, damage to the connected object 1 can be effectively prevented, and the contact resistance between the tip of the probe 2a and the connected object 1 can always be kept constant, so that accurate measurement and accurate measurement can be performed. Power supply becomes possible. However, in the present invention, it is not always necessary to detect the bending of the lever portion 2b of the cantilever 2 and perform the above-described control. Even in this case, unlike the case of the sharp rod-shaped metal needle used in the conventional probe device, even if the tip of the probe 2a of the cantilever 2 is brought into contact with the connected object 1, the cantilever 2 Since the lever portion 2a is bent, a large force is not applied to the connected body 1 due to the bending, and damage to the connected body 1 can be prevented.

In the probe device according to the present embodiment, since the lever portion 4a of the cantilever 2 has the boron diffusion layer 23 as the deflection detecting means, the deflection detecting means by the optical lever method, the optical interference method, or the like. (1) It becomes unnecessary to align the optical system, etc.
(3) In the case where a plurality of probe devices are used at the same time to electrically connect to a plurality of locations of a connected body at the same time, the space between these locations can be narrowed. It is possible to obtain advantages such as (4) the cantilever 1 can be moved instead of the connected object 1 so that the position of the electrical connection portion of the connected object 1 is not restricted. However, in the present invention, a device using an optical leverage, an optical interference method, or the like may be employed as the deflection detecting means.

Further, in the probe device according to the present embodiment, the cantilever 2 is manufactured by using a semiconductor manufacturing technique in the same manner as a cantilever such as an atomic force microscope. The size of the lever portion 4 of the cantilever 2 can be reduced, and the distance between the contact points of the plurality of probe devices with the connected object can be sufficiently reduced. Also,
By devising the shape of the probe 2a, the tip can be easily observed. For example, the probe can be brought into contact with a desired position with an accuracy of within 0.1 micron under an electron microscope. By contacting the tips of the probes 2a of a plurality of probe devices with the sample at a distance of 1 micron or less, it becomes possible to examine local electrical properties and the like.

The embodiment of the present invention has been described above, but the present invention is not limited to this embodiment.

For example, as the cantilever 2 in FIG.
Instead of the cantilever shown in FIG. 2, a cantilever shown in FIG. 6 can be adopted. FIG. 6 shows the cantilever 2
FIG. 6A is a schematic plan view thereof, and FIG. 6B is a schematic cross-sectional view thereof.

In the cantilever 2 according to the present embodiment, as shown in FIG. 6, the lever portion 2b includes silicon nitride films 61 and 62,
A tantalum layer 63 formed on the silicon nitride film 62, a platinum layer 64 as a lower electrode formed on the tantalum layer 63, and a thin film having piezoelectric or electrostrictive properties formed on the platinum layer 64 (PZT (lead zirconate titanate)) film 65, a platinum layer 66 as an upper electrode formed on the PZT film 65, and a conductive film 67 formed on the lower surface of the silicon nitride film 61. I have. In this example, PZ
The T film 65 is formed on the lever portion 2b and constitutes a deflection detecting means for detecting the deflection of the lever portion 2b. As the material of the film 65, zirconate titanate-lanthanum oxide solid solution, lead magnesium niobate-lead lead titanate solid solution, barium titanate, or the like may be used instead of PZT. The lower electrode 64 is made of a material that can withstand heat treatment at the time of forming a thin film, and the lever portion 16 b of the silicon nitride film 62 or the like.
Therefore, it is preferable to use platinum as a main raw material, as described above, because it is required to be firmly bonded to the base material. In order to further improve the characteristics with respect to these two conditions,
It is preferable to form the tantalum layer 63 (titanium or the like may be used instead of tantalum) as a buffer layer.

Further, in the cantilever 2 according to the present embodiment, the probe 2 b is formed by a part of the silicon nitride film 62 and the conductive film 6.
7. Further, in this example, the support 2 c includes the silicon layer 68, portions such as the silicon nitride films 61 and 62 extending on the silicon layer 68, and the silicon layer 6.
8 is composed of silicon nitride films 69 and 70 on the lower surface and a part of the conductive film 67.

Next, an example of a method for manufacturing the cantilever 2 shown in FIG. 6 will be described with reference to FIG. FIG.
FIG. 7 is a schematic sectional view illustrating an example of a manufacturing process of the cantilever 2 illustrated in FIG. 6.

First, the silicon substrate 6 having the (100) plane orientation
8, silicon nitride films 61 and 69 are formed by a CVD method, a window 61a is opened in a part of the film 61 by reactive dry etching, and anisotropic etching using potassium hydroxide is performed through the window 61a. A trench 68a is formed in the silicon substrate 68 (FIG. 7A). Next, the silicon nitride film 6 is again formed on both surfaces of the substrate in the state shown in FIG.
2 and 70 are formed (FIG. 7B). Thereafter, a tantalum layer 63 having a thickness of 0.1 μm is formed on the silicon nitride film 62 by photolithography, and a platinum layer 64 is further formed thereon.
Is formed with a thickness of 0.1 μm. Next, after a PZT film 65 is formed thereon with a thickness of 1 μm by a sputtering method, a platinum layer 66 is formed (FIG. 7C). Thereafter, the silicon nitride films 61, 62, 69, and 40 are patterned into a desired shape (FIG. 7D), and the silicon substrate 68 is removed by anisotropic etching except for a portion corresponding to the support 2c. Finally, a metal film 67 is formed on the entire lower surface of the substrate in the state shown in FIG. Thus, the cantilever shown in FIG. 6 is completed.

In this embodiment, the PZT film 65 is a PZT film formed by the sputtering method as described above. However, the PZT film 65 is formed by a sol-gel method having an inferior piezoelectric constant and being unstable. A PZT film or ZnO having a low piezoelectric constant in physical properties may be used.

The cantilever known in the scanning probe microscope is deformed by giving conductivity to the tip of the probe or forming a conductive path from the tip of the probe to the support. By adding, a cantilever that can be used in the present invention can be provided. Further, by applying a tip sharpening technique known in a scanning probe microscope, the tip can be further sharpened.

[0057]

As described above, according to the present invention,
Damage to the connected object can be prevented. Further, according to the present invention, the contact resistance with respect to the connected object can be kept constant. Further, according to the present invention, there is provided a probe device in which the tip of a portion that contacts the connected object is sufficiently small and the distance between the contact points of the plurality of probe devices with the connected object can be sufficiently reduced. Can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a probe device according to an embodiment of the present invention.

FIG. 2 is a view showing an example of a cantilever, and FIG.
2A is a schematic plan view, and FIG. 2B is a schematic sectional view.

FIG. 3 is a schematic sectional view showing an example of a manufacturing process of the cantilever shown in FIG.

FIG. 4 is a schematic cross-sectional view showing a manufacturing process subsequent to the manufacturing process shown in FIG.

FIG. 5 is a schematic plan view showing a part of the manufacturing process shown in FIGS. 3 and 4.

FIG. 6 is a view showing another example of the cantilever, and FIG.
(A) is a schematic plan view thereof, and FIG. 6 (b) is a schematic sectional view thereof.

FIG. 7 is a schematic sectional view showing an example of a manufacturing process of the cantilever shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Connected object 2 Cantilever 2a Probe 2b Lever part 2c Support 26,67 Conductive film 23 Boron diffusion layer 23 27,32,33 Wiring pattern 31,34,35 Electrode pattern 65 PZT film

Claims (8)

[Claims] 1. A probe device for making electrical connection by contact to a minute area of a connected body, comprising: a cantilever having a lever portion having a probe in a distal end side region and a support member supporting the lever portion. A probe device, wherein the tip of the probe has conductivity, and the cantilever further has a conductive path extending from the tip of the probe to the support. 2. The probe device according to claim 1, further comprising a bending detecting means for detecting bending of the lever portion. 3. The probe device according to claim 2, wherein said lever portion has said deflection detecting means. 4. The deflection detecting means includes a resistor formed on the lever portion, the resistance value of which varies according to the applied pressure, or a thin film formed on the lever portion and having piezoelectric or electrostrictive characteristics. The probe device according to claim 3, wherein: 5. A contact pressure of the probe with respect to the minute area based on a detection signal from a moving unit that relatively moves the cantilever with respect to the connected body and a detection signal from the bending detection unit. The probe device according to any one of claims 2 to 4, further comprising control means for controlling the moving means. 6. The probe device according to claim 1, wherein the cantilever is manufactured using a semiconductor manufacturing technique. 7. A lever portion having a probe in a tip side region,
A cantilever having a support for supporting the lever portion, wherein the tip of the probe has conductivity, and a cantilever having a conductive path from the tip of the probe to the support is used. An electrical connection by contacting the micro-region by contacting the tip of the micro-region with the micro-region of the body to be connected. 8. A flexure of the lever portion is detected, and the cantilever is moved relative to the connected object based on a detection signal so that a contact pressure of the probe becomes a desired pressure. 8. The method according to claim 7, wherein the electrical connection is made to a minute area.