JPH10294272A - Aligner and exposure method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reproducibility of alignment and autofocusing, by suppressing air flow in the path of an alignment beam and exposure beam by covering the path with a wind shielding member. SOLUTION: A water stage WS of an aligner 1 is a stage that three dimensionally shifts with a wafer W, which is an induction substrate, and is composed of a vacuum chuck and X, Y, Z stages. Above the water stage WS, a projection optical system PL of a projection lens, etc., is arranged along an optical axis 5 which is parallel to the vertical line. A projection lens tube 3 is a metal part covering the outer circumference of the projection lens at the lowest edge of the projection optical system PL. On the lower edge outer circumference of the projection lens tube 3, a wind shielding tube 7 is provided. The wind shielding tube 7 is a thin tube provided on the outer circumference of the lower edge part of the projection lens tube 3 to be vertically moved by air cylinders 9a and 9b. A wind shielding tube 55 which moves downward at the time of reticle replacement is provided between a reticle R and the projection optical system PL.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure apparatus and an exposure method used for forming a semiconductor circuit pattern or the like on the surface of a sensitive substrate such as a wafer. In particular, the present invention relates to an exposure apparatus and an exposure method that can solve the problem of deterioration in autofocus and alignment accuracy caused by air fluctuation.

[0002]

2. Description of the Related Art In recent years, in a lithography process for manufacturing a semiconductor element or a liquid crystal display element, a mask or a reticle (hereinafter, referred to as a mask or a reticle)
Called reticle. ) Is a step-and-repeat type projection exposure apparatus (stepper) as an apparatus for transferring the pattern of (1) onto a sensitive substrate (for example, a wafer or a glass plate having a resist layer formed on the surface) via a projection optical system.
Is often used. In this type of exposure apparatus, the distance between the projection optical system and the surface of the wafer as a sensitive substrate is, for example, about 15 mm. Further, an autofocus sensor (hereinafter, appropriately referred to as an AF sensor) for detecting a focal position (height) of the wafer at a central measurement point or a plurality of measurement points in the exposure field of the projection optical system is provided. .
This AF sensor generally uses a so-called oblique incidence AF sensor that irradiates the wafer surface with light obliquely from a light transmitting system and receives the reflected light by a light receiving system. No. 60-168112.

In this oblique incidence AF sensor, the incident angle of light (hereinafter, referred to as AF light) emitted from a light transmission system is extremely shallow with respect to the wafer, for example, about 8 degrees (see FIG. 1). ). This is for the following reason. Assuming that the exposure area of the projection lens has a diameter of 35 mm, the N.V.
A. In order for about 0.6 light to pass, the projection lens must be 11 mm larger in radius than the exposed area. Therefore, the diameter of the lens needs to be 57 mm or more. The diameter of the hardware (barrel) that supports the lens is even larger, with a radius of 2
When 0 mm is expected, the outer shape of the hardware is nearly 100 mm in diameter.
Since the AF light has a light transmission system and a light reception system sandwiching a projection lens having a diameter of 100 mm, it travels in the air before the AF light leaves the AF light transmission optical system and enters the light reception optical system. The passing distance will be 150 mm to 200 mm.

[0004]

Normally, the inside of the chamber covering the exposure apparatus is air-conditioned to keep the temperature, pressure, humidity and the like at predetermined values. However, air fluctuations in the optical path of the AF light occur mainly due to the airflow caused by the air conditioning, and therefore, the detection accuracy is deteriorated, and the inconvenience that accurate detection of the wafer focal position cannot be performed occurs. That is, air fluctuation due to the air-conditioning air flow occurs in the space between the projection optical system and the wafer, and this air fluctuation has had a bad influence on the detection of the focal position of the wafer.

Further, for example, in a wafer alignment microscope which is provided at a predetermined distance from a projection optical system and detects alignment marks and the like provided on a wafer, similarly, the wafer alignment microscope and the wafer surface There has been a disadvantage that air fluctuations in the space between the two have an adverse effect on alignment accuracy.

The present invention has been made in view of the above-mentioned disadvantages, and provides an exposure apparatus and an exposure method capable of detecting a focus position of a wafer or an alignment mark without being adversely affected by air fluctuation. The purpose is to do.

[0007]

According to a first aspect of the present invention, there is provided an exposure apparatus for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system. , A wind-shielding member that wind-shields a space between the projection optical system and the sensitive substrate and / or a space between the projection optical system and the mask is provided. The characteristic feature is that the airflow is suppressed.

According to a second aspect of the present invention, there is provided an exposure apparatus for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system, wherein an image is transferred between the projection optical system and the sensitive substrate. A first wind shield member that shields the space and / or the space between the projection optical system and the mask,
An alignment optical system provided outside the projection optical system and configured to detect a position of an alignment mark provided on the sensitive substrate; and a second wind shielding a space between the alignment optical system and the sensitive substrate. And a wind shield means for suppressing airflow in the space blocked by the first and second wind shield members.

In the present invention, a driving means for driving the wind shielding member may be further provided in order to open and close a space blocked by the wind shielding member. If the wind shield member becomes an obstacle when replacing the wafer, the wind shield member is opened to allow the wafer to be taken in and out, and during alignment and exposure, the wind shield member is closed to suppress airflow in the wind shield member, The fluctuation of alignment light, AF light and exposure light is prevented.

An exposure method according to a first aspect of the present invention is an exposure method for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system. At the time of detecting the height position and at the time of exposure, the space between the projection optical system and the sensitive substrate and / or the space between the projection optical system and the mask is shielded from air, and the airflow in the space is reduced. In addition to the suppression, when the sensitive substrate is replaced, the wind shielding of the space is released.

An exposure method according to a second aspect of the present invention is an exposure method for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system. At the time of detecting the height position and at the time of exposure, the space between the projection optical system and the sensitive substrate and / or the space between the projection optical system and the mask is shielded from air, and the airflow in the space is reduced. In addition to this, when replacing the sensitive substrate, the stage on which the sensitive substrate is mounted is moved to replace the sensitive substrate while keeping the wind shield.

An exposure apparatus according to the present invention further comprises an alignment optical system for detecting a position of an alignment mark provided on the sensitive substrate, and a height detecting device for detecting a position of the sensitive substrate with respect to an optical axis direction of the projection optical system. The windshield member is provided so as to surround the projection optical system, or to surround the projection optical system and the alignment optical system and / or the height position detection means. be able to.

In the present invention, the wind shielding member is provided along the optical axis of the optical system, which is provided so as to protrude from the outer periphery of the lens barrel of the projection optical system, alignment optical system or objective optical system toward the sensitive substrate. The windshield cylinder can be raised and lowered (open / closed), and when the cylinder is lowered (closed), the lower end of the windshield cylinder can be positioned with a small distance from the surface of the sensitive substrate. By reducing the volume of the space in the windshield as much as possible, it is possible to suppress air fluctuations due to uneven environmental conditions in the windshield. Further, when the windshield is opened and closed, the windshield is moved in the axial direction, so that the airflow accompanying the movement of the windshield can be minimized.

In the present invention, the exposure apparatus may have an autofocus sensor, and the windshield may have a hole through which the autofocus sensor beam passes. Although the autofocus sensor can be accommodated in the windshield cylinder, in that case, the diameter of the windshield cylinder increases, and the arrangement of the autofocus sensor is restricted. Therefore, the windshield cylinder should be the minimum necessary size,
It is advantageous to drill a hole through which the autofocus sensor beam passes with a minimum size (for example, described later) in the windshield.

The wind shielding member of the present invention can be provided only for an off-axis alignment microscope or alignment inspection device (registration measuring device). Also in these apparatuses, fluctuations in the detection light and the inspection light can be prevented, and more accurate detection and measurement can be performed.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a more specific description will be given with reference to the drawings. First, an overall configuration of an exposure apparatus (stepper) to which the present invention is applied will be described with reference to FIG. FIG. 2 shows the overall configuration of the stepper of the present embodiment. In FIG. 2, reference numeral 101 denotes a mercury lamp. After the exposure light IL from the mercury lamp 101 is focused by the elliptical mirror 102, it is converted into a substantially parallel light beam by the input lens 103. A shutter 105 is arranged between the elliptical mirror 102 and the input lens 103, and the shutter 105 is closed by the drive motor 106, whereby the supply of the exposure light IL to the input lens 103 can be stopped. Reference numeral 107 denotes a main control system that controls the operation of the entire apparatus. The main control system 107 controls the operation of the drive motor 106. In addition to the mercury lamp 101, a pulsed laser light source such as a KrF excimer laser or other light sources can be used.

Exposure light IL emitted from the input lens 103 enters a fly-eye lens 104 as an optical integrator, and
A large number of secondary light sources are formed on the focal plane on the exit side (reticle R side). Further, a variable aperture stop 108 is arranged on the surface on which the secondary light source is formed.

The aperture light of the variable aperture stop 108, that is, the exposure light IL emitted from the secondary light source, has a high transmittance and a low reflectance, a beam splitter 109, a first relay lens 110, a variable reticle blind 111, and a second The light enters the main condenser lens 113 via the relay lens 112. Exposure light IL appropriately condensed by main condenser lens 113 is reflected almost vertically downward by mirror 114 to illuminate reticle R with substantially uniform illuminance. In this case, the variable reticle blind 111 is disposed on a plane conjugate with the reticle R, and functions as an illumination field stop of the exposure light IL for the reticle R. The main control system 107 controls the variable reticle blind 111 via the driving device 115. Is set in a predetermined state.

The exposure light IL that has passed through the pattern area of the reticle R is focused on a shot area on the wafer W by the projection optical system PL, so that the pattern of the reticle R is focused on the shot area of the wafer W at a predetermined reduction magnification. Transcribed. The Fourier transform plane (pupil plane) of the projection optical system PL is conjugate with the secondary light source forming plane of the fly-eye lens 104. The wafer W is held on a wafer holder 116, and the wafer holder 116 is mounted on a wafer stage 117. The wafer stage 117 is used to position the wafer W two-dimensionally in a plane perpendicular to the optical axis of the projection optical system PL.
It comprises a stage and a Z stage for positioning the wafer W in a direction parallel to the optical axis of the projection optical system PL.

Wafer holder 1 on wafer stage 117
In the vicinity of 16, an irradiation amount monitor 1 made of a photoelectric conversion element is provided.
The movable mirror 120 is fixed on the upper surface of the wafer stage 117. By driving the wafer stage 117 and setting the irradiation amount monitor 119 to the exposure area of the projection optical system PL, it is possible to measure the power of the exposure light IL actually applied to the wafer W via the projection optical system PL. The detection signal of the irradiation amount monitor 119 is transmitted to the main control system 10.
7

Reference numeral 121 denotes a laser interferometer, and the laser beam from the laser interferometer 121 is
By reflecting at 20, the coordinates of the wafer stage 117 in a plane perpendicular to the optical axis of the projection optical system PL can be detected. This coordinate information is supplied to the main control system 107 and a coordinate measuring circuit 126 described later. The main control system 107 controls the positioning of the wafer stage 117 via the drive unit 122 while monitoring the supplied coordinates.

Next, the exposure light reflected from the wafer W is
The beam returns to the beam splitter 109 via the projection optical system PL, reticle R, mirror 114, main condenser lens 113, second relay lens 112, variable reticle blind 111 and first relay lens 110. The exposure light IL reflected by the beam splitter 109 is incident on a light receiving surface of a reflectance monitor 123 composed of a photoelectric conversion element. A detection signal from the reflectance monitor 123 is supplied to the main control system 107. The main control system 107 moves the wafer stage 117 via the drive unit 122 to sequentially set the wafer W and a reference reflection plate (not shown) in the exposure area of the projection optical system PL, so that the wafer W and the reference reflection The detection signal of the reflectance monitor 123 corresponding to the plate is obtained. Then, by storing the reflectance of the reference reflector in advance, the reflectance of the wafer W can be obtained from, for example, a proportional relationship.

Reference numeral 124 denotes an off-axis alignment optical system, and a mirror 12 for guiding an alignment beam from the alignment optical system 124 to the projection optical system PL.
5 is disposed between the reticle R and the projection optical system PL. In the vicinity of each shot area of the wafer W, an X-axis alignment mark (wafer mark) and a Y mark
An axis wafer mark is formed. Then, when measuring the coordinates of a predetermined shot area of the wafer W, the alignment beam from the alignment optical system 124 is irradiated onto the X-axis wafer mark of the shot area via the mirror 125 and the projection optical system PL. The beam reflected (or diffracted) from the wafer mark is received by the alignment optical system 124 via the projection optical system PL and the mirror 125. The alignment optical system 124 detects a position signal corresponding to the X coordinate of the wafer mark using the beam from the wafer mark and supplies the position signal to the coordinate measuring circuit 126.

The coordinate measuring circuit 126 has a laser interferometer 1
The current X coordinate and Y coordinate of the wafer stage 117 measured at 21 are constantly supplied. Therefore, the coordinate measuring circuit 126 can determine the X coordinate of the wafer mark for the X axis in the shot area of the wafer W on the wafer stage 117. Similarly, alignment optical system 124
Also generates an alignment beam for the Y-axis wafer mark of the wafer W, and the coordinate detection circuit 126 determines the Y coordinate of the Y-axis wafer mark of the shot area of the wafer W on the wafer stage 117. Can be.
The coordinates of the X-axis wafer mark and the coordinates of the Y-axis wafer mark specify the two-dimensional coordinates of the shot area.

FIG. 1 is a side view schematically showing the entire configuration of an exposure apparatus according to one embodiment of the present invention. FIG.
FIG. 3 is an enlarged side view showing a periphery of a wafer stage and a projection optical system of the exposure apparatus of FIG. The exposure apparatus 1 of this embodiment includes a wind shield tube 7 that shields the air between the projection optical system PL and the wafer W, and also has a wind shield tube 55 that shields the air between the reticle R and the projection optical system PL. Have. With the wind shield cylinder 55, the fluctuation of the air between the reticle R and the projection optical system PL can be suppressed, and the fluctuation of the alignment light (Through The Reticle type) and the exposure light can be prevented. It should be noted that the wind shield cylinder 55 also moves downward when replacing the reticle, so that it does not interfere with the movement of the reticle stage RST.

Wafer stage WS of exposure apparatus 1 in FIG.
Is a stage on which a wafer W, which is a sensitive substrate, is placed and moves three-dimensionally, and comprises a vacuum chuck and X, Y, and Z stages. Note that the normal optical axis direction is the Z axis,
The X and Y axes are set in a plane perpendicular to the optical axis.

Above the wafer stage WS, a projection optical system PL such as a projection lens is usually arranged along an optical axis 5 parallel to the earth vertical line. The projection lens barrel 3 is a metal covering the outer periphery of the projection lens at the lowermost end of the projection optical system PL.

On both sides of the lower end of the projection lens barrel 3,
AF light transmission system AFS and AF as auto focus sensors
A light receiving system AFR is arranged. AF light transmission system AFS
Is directed obliquely downward, and emits an AF beam AFB toward the surface of the wafer W. The AF light receiving system AFR receives the AF beam AFB reflected on the surface of the wafer W, and detects the beam incident position (wafer W surface height). Based on this AF signal, the Z-stage of the wafer stage WS is moved to perform auto-focus so that the focal point of the projection optical system comes to the surface of the wafer W.

A wind shield tube (skirt) 7 is provided on the outer periphery of the lower end of the projection lens barrel 3. The wind shield cylinder 7 has a thin cylindrical shape, and is provided around the lower end of the projection lens barrel 3 so as to be vertically movable by air cylinders 9a and 9b. In this example, the air cylinder 9 is provided inside the wind shield tube 7, but may be provided outside the wind shield tube. The material of the wind shield tube 7 is not particularly limited, and a metal plate, a plastic plate (eg, acrylic), or the like can be used. There is no problem even if the thickness is thin enough not to cause distortion.

In FIG. 3, the two-dot chain line indicated by reference numeral 11 indicates the position of the lower end of the windshield cylinder 7 when it is raised, and the solid line indicated by reference numeral 13 indicates
The lower end position of the wind shield cylinder 7 when it is lowered is shown. Ascent position 11
Is almost the same level as the lower end of the projection lens barrel 3,
The gap H between this position 11 and the upper surface of the wafer W is about 15
mm. In the exposure apparatus of the present embodiment, the wafer exchange arm 41 illustrated on the right end of FIG. When exchanging the wafer, there is also an exposure apparatus of the type in which the wafer W is put out of the projection lens barrel 7. In that case, since the arm 41 does not enter the projection lens barrel 7, the windshield 7 does not need to move up and down.

There is a small gap between the lower end position 13 of the wind shield cylinder 7 when it is lowered and the upper surface of the wafer W, so that the wind shield cylinder 7 does not come into contact with the wafer W. Since this gap serves as an air flow passage inside and outside the wind shield cylinder 7, it is preferable that the gap is as narrow as possible. Specifically, 0.1 to 5 mm is preferable, and 0.2 to 1 mm is practical and more preferable.

FIG. 4 is a perspective view showing a windshield cylinder of the exposure apparatus of FIG. FIG. 5 shows an example of the shape of the beam passage hole of the wind shield cylinder of FIG. When the windshield cylinder 7 descends, the AF beam A
Beam passing holes 18a and 18b are opened in left and right portions through which the FB passes. The beam 17 enters the windshield 7 through the left beam passage hole 18a, is reflected on the wafer surface, and exits the windshield 7 through the right beam passage hole 18b.

FIG. 5 shows an example of the shape of the beam passage hole 18.
A single circle as shown in FIG. 5A, an elongated oval as shown in FIG. 5B, and a plurality of circles as shown in FIG. The accuracy of AF is improved by setting a plurality of positions where the AF beam is applied. In this case, a plurality of oval or circular arrangements are preferable.

The dimensions of the beam passage holes are represented by r in FIG.
10 mm is preferred, and 2.5-4 mm is more preferred. The width b of the oval is preferably 10 to 30 mm. The width b 'of the two holes is preferably 10 to 50 mm. AF beam diameter,
And a numerical value taking into account the scanning angle.

The description will be continued with reference to FIG. The alignment microscope AM depicted on the right side of the figure is an apparatus for off-axis alignment. Through The Lens
In the on-axis alignment method such as (TTL) and Through The Reticle (TTR), the alignment light (illumination / reflection) passes through the projection lens of the exposure system. Is provided so that the alignment light does not pass through the exposure system. The selection of the alignment method is determined in consideration of the wavelength of the exposure light and the alignment light, the aberration of the optical system, the accuracy of the wafer stage, and the like.

In the lens barrel 33 of the alignment microscope AM,
Similarly to the above-described projection lens barrel, an air cylinder 37 is provided with a vertically movable windshield cylinder 35. The dimensional relationship between the lower end position 38 and the lower end position 39 of the windshield cylinder 35 when raised and the lower end position 39 when lowered, and the upper surface of the wafer W is the same as in the case of the windshield cylinder 7 for the exposure system projection lens described above. The lens barrel 33 for the alignment microscope AM descends during alignment of the wafer W (the wafer stage WS and the wafer W are located below the alignment microscope AM) to reduce air fluctuations in the field of view of the microscope 31. To prevent.

In the exposure apparatus shown in FIG. 1, when exposure is completed, the wafer stage WS moves to a wafer exchange position,
At the same time, air is sent into the air cylinders 9a and 9b, and the projection lens windshield 7 is lifted up. At this time, the windshield 35 of the alignment microscope AM has already been lifted up by the air cylinder 37,
As a result, at the time of wafer exchange, a space having a height H is formed below the projection lens and the alignment microscope, and the wafer exchange is performed smoothly.

When the wafer exchange is completed, the wafer stage W
S moves so that the wafer W comes under the alignment microscope AM. At the same time, air is evacuated from the air cylinder 37, and the alignment microscope windshield 35 descends.
The wind shield cylinder 35 is designed so that its tip does not collide with the wafer W, and stops at, for example, a point about 1 mm above the wafer W. At the same time, air is evacuated from the air cylinders 9a and 9b for driving the windshield cylinder 7 for the projection lens, and the projection lens windshield cylinder 7 is lowered. The wind shield tube 7 also stops at about 1 mm above the wafer similarly to the alignment microscope wind shield tube 35.

During the alignment, the alignment marks (not shown) on the wafer W are sequentially positioned under the alignment microscope AM by the wafer stage WS. The autofocus of the alignment microscope AM is performed by a through-the-lens (not shown) attached to the microscope 31.
This is performed by a lens (TTL) sensor.

When a predetermined number of alignments are detected, the wafer W moves below the exposure projection lens and is positioned at an exposure position reflecting the alignment result.
At this time, air is simultaneously sent into the air cylinder 37, and the alignment microscope windshield 35 is raised. It is not particularly necessary to raise at this timing, and it is of course possible to raise the projection lens simultaneously with the windshield 7 after exposure. It is better to refrain from raising the windshield cylinder during exposure, because vibration during operation may affect the positioning of the wafer stage.

During the exposure, the beam 17 emitted from the auto-focusing AF light transmission system AFS of the exposure system
And reaches the AF light receiving system AFR. Since a change in the height of the wafer stage results in a change in the beam incident position, the focus is detected in the light receiving system 19 and auto-focusing is performed, and the Z stage of the wafer stage moves up and down so that the optimum focus position is obtained.

FIG. 6 is a side view showing the vicinity of a projection lens windshield cylinder of an exposure apparatus according to another embodiment of the present invention. FIG.
The difference from this embodiment is the difference in the arrangement of the projection lens windshield cylinder 7 '. In the embodiment of FIG. 1, there is a tube wall inside the autofocus transmission / reception systems AFS and AFR, and a hole 18 for passing the autofocus beam AFB is opened in the windshield cylinder 7, but in the embodiment of FIG. 6. A windshield tube 7 'is arranged outside the autofocus light transmitting / receiving systems AFS' and AFR '. That is, the diameter of the wind shield cylinder 7 'is large. In this case, it is not necessary to make a hole for the AF beam in the cylinder.

[0043]

As is apparent from the above description, according to the present invention, the passage of the alignment light and the exposure light is covered with the wind-shielding member to suppress the air flow therein, and the alignment light and the AF are prevented.
Fluctuation of light and exposure light can be prevented. As a result, alignment and AF reproduction accuracy can be improved.

[Brief description of the drawings]

FIG. 1 is a side view schematically showing an overall configuration of an exposure apparatus according to one embodiment of the present invention.

FIG. 2 is a side view showing an overall configuration of an exposure apparatus (stepper) to which the present invention is applied;

FIG. 3 is an enlarged side view showing a periphery of a wafer stage and a projection optical system of the exposure apparatus of FIG. 1;

FIG. 4 is a perspective view showing a windshield cylinder of the exposure apparatus of FIG.

FIG. 5 shows an example of a shape of a beam passage hole of the windshield cylinder of FIG.

FIG. 6 is a side view showing the vicinity of a projection lens windshield cylinder of an exposure apparatus according to another embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 3 Projection lens barrel 5 Optical axis 7 Wind shield tube (skirt) 9 Air cylinder 11 Lower position of skirt lower end 13 Lower position of skirt lower end 18 Beam passage hole 31 Alignment microscope 33 Lens tube 35 Wind shield tube (skirt) 37 Air Cylinder 38 Lower skirt lower position 39 Lower skirt lower position 41 Wafer exchange arm PL Projection optical system AFS Autofocus light transmission system AFB Autofocus beam AFS Autofocus light receiving system W Wafer WS Wafer stage

Claims (6)

[Claims] 1. An exposure apparatus for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system, comprising: a space between the projection optical system and the sensitive substrate and / or the projection optical system. An exposure apparatus, comprising: a wind shielding member for shielding a space between the mask and the mask; and suppressing airflow in the space blocked by the wind shielding member. 2. An exposure apparatus according to claim 1, further comprising a driving unit for driving said wind shielding member to open and close a space blocked by said wind shielding member. . 3. The exposure apparatus according to claim 1, further comprising: an alignment optical system that detects a position of an alignment mark provided on the sensitive substrate; and a position of the sensitive substrate with respect to an optical axis direction of the projection optical system. And a height position detecting means for detecting the windshield member, so that the windshield member surrounds the projection optical system, or
2. The exposure apparatus according to claim 1, wherein the exposure apparatus is provided so as to surround the projection optical system and the alignment optical system and / or the height position detecting unit. 4. An exposure apparatus for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system, wherein a space between the projection optical system and the sensitive substrate and / or the projection optical system is provided. A first wind shielding member for shielding the space between the mask and the mask, an alignment optical system provided outside the projection optical system, and detecting a position of an alignment mark provided on the sensitive substrate; A second wind shield means for shielding a space between the alignment optical system and the sensitive substrate, wherein air flow in the space blocked by the first and second wind shield members is suppressed. Exposure equipment characterized. 5. An exposure method for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system, wherein at least alignment, height position detection and exposure are performed on the sensitive substrate. Occasionally, the space between the projection optical system and the sensitive substrate and / or the space between the projection optical system and the mask is blocked to suppress airflow in the space, and when the sensitive substrate is replaced. Is an exposure method, wherein wind shielding of the space is released. 6. An exposure method for transferring an image of a pattern formed on a mask onto a sensitive substrate via a projection optical system, wherein at least alignment, height position detection, and exposure are performed on the sensitive substrate. Occasionally, the space between the projection optical system and the sensitive substrate and / or the space between the projection optical system and the mask is blocked to suppress airflow in the space, and when the sensitive substrate is replaced. Is a method for exchanging a sensitive substrate by moving a stage on which a sensitive substrate is mounted while maintaining wind shielding.