JPH10294254A - Aligner for spherical device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To transfer a circuit pattern with a high throughput, by providing a circuit pattern corresponding to the spherical surface of a spherical device material, and providing means for exposing, in one shot, the circuit pattern onto the spherical surface of the spherical device material over a half or more region of the entire spherical surface. SOLUTION: A light radiated from an excimer laser EX, which is an exposure light source 5, is condensed to a single focal point F1 (first focal point) of an elliptic mirror 3 by an illumination optical system ILM to be a condensing optical system. The center of a spherical silicon 1 located at a proper position is arranged to coincide with another focal point F2 (second focal point) of the elliptic mirror 3, thereby directing all the lights reflected by the elliptic mirror 3 toward the center of the spherical silicon 1 (the second focal point F2 of the elliptic mirror 3). Then, illumination is carried out at a perpendicular angle to a reticle 2, and a hologram regenerative pattern 2a thereof is formed on a surface 1a of the spherical silicon 1. At this point, exposure is carried out in one shot over a half or more region of the entire spherical surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an exposure apparatus and a manufacturing method for a spherical device, and more particularly to an exposure apparatus and a manufacturing method suitable for a device such as a spherical semiconductor.

[0002]

2. Description of the Related Art Conventionally, a silicon wafer having a flat plate shape is known. Recently, a spherical semiconductor using ball-shaped silicon of about 1 mm has been proposed.

In addition, it has been proposed to support the spherical silicon on a holder tee, like supporting a golf ball on a golf tee.

Such spherical silicon can be used in various forms by connecting a plurality of bumps B as shown in FIG.

[0005]

As a spherical device material, it is required to transfer a circuit pattern with high throughput to a wide area of a spherical surface of spherical silicon. An object of the present invention is to provide a spherical device exposure apparatus and a manufacturing method which satisfy this demand.

[0006]

A spherical device exposure apparatus according to the present invention has a circuit pattern corresponding to a spherical surface of a spherical device material, and the circuit pattern is formed on the spherical surface of the spherical device material over an area of at least half of the entire spherical surface. And a means for batch exposure.

For example, a pattern on a reticle is formed by a hologram for reproducing a circuit pattern to be transferred to the surface of the spherical silicon, and the illumination light is divided into two parts. It is configured to be one focal point, the illumination light is condensed at the focal point of another elliptical mirror, and then irradiated to the elliptical mirror, and the other is directly spherical silicon without using the elliptical mirror And the hologram pattern on the reticle is made to correspond to two illumination conditions.

The method for manufacturing a spherical device according to the present invention includes the steps of providing a circuit pattern corresponding to the spherical surface of the spherical device material, and forming the circuit pattern on the spherical surface of the spherical device material over an area of at least half of the entire spherical surface. It is characterized by having a step of exposing.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A detailed description will be given below with reference to FIGS.

FIG. 1 shows an embodiment of a spherical device exposure apparatus and a manufacturing method of the present invention for performing collective exposure over a half or more area of a full spherical surface.

In FIG. 1, reference numeral 2 denotes a reticle having a circuit pattern hologram formed on a pattern surface 2a. A circuit pattern surface to be transferred is formed on the surface 1a of the spherical silicon 1 with the reproduction pattern of the hologram. This reticle 2
The outer shape is a spherical shape forming the hologram pattern surface 2a, and the inside is hollow and has a surface 2b indicated by a broken line. The hologram pattern surface 2a and the surface 2b indicated by a broken line are formed concentrically.

Here, as compared with the comparative example shown in FIG. 8, it is possible to transfer the entire surface 1a of the spherical silicon 1 at one time, that is, over a half or more area of the whole spherical surface. Hologram pattern surface 2 of the reticle 2
a also has two holograms HR1 and H corresponding to the illumination system.
R2 (shown in FIGS. 5 and 6).

First, two illumination systems will be described.

FIG. 2 shows an embodiment of one illumination system, and FIG. 3 shows an embodiment of the other illumination system.

The illumination system shown in FIG. 2 is called a first illumination system using the elliptical mirror 3, and the illumination system shown in FIG.
Is referred to as a second illumination system that does not use.

First, a first illumination system using the elliptical mirror 3 will be described. The light emitted from the excimer laser EX as the exposure light source 5 in FIG. 1 is brought to one focal point F1 (first focal point) of the elliptical mirror 3 by the illumination optical system ILM shown in FIGS. It is collected. By arranging the center of the spherical silicon 1 disposed at an appropriate position so as to coincide with the other focal point F2 (second focal point) of the elliptical mirror 3, all the light reflected by the elliptical mirror 3 will be spherical silicon 1 (The second focal point F2 of the elliptical mirror 3).
Illumination is performed at an angle perpendicular to the reticle 2, and a hologram reproduction pattern 2a is formed on the surface 1a of the spherical silicon 1, and a desired circuit pattern is transferred.

In this manner, when viewed from the exposure light source 5 (excimer laser EX), the reticle 2 and the back surface of the spherical silicon 1 are also uniformly illuminated by the elliptical mirror 3, and the reproduction pattern of the hologram is spherical silicon. 1 can be formed as a circuit pattern to be transferred on the surface of the device.

The illumination system has an elliptical mirror 3 and an illumination optical system I.
Since the LM can actually be configured only in a finite illumination angle range, the reticle 2 and the spherical silicon 1 can be separately illuminated simultaneously with the first illumination system on the side closer to the exposure light source (excimer laser EX). It is necessary to do.

As this illumination system, a second illumination system not using the elliptical mirror 3 shown in FIG. 3 is configured.

With this illumination system, the light emitted from the excimer laser EX illuminates the reticle 2 as, for example, parallel light via the illumination optical system ILM, and the hologram reproduction pattern is transferred to the surface of the spherical silicon 1. . The illumination optical system ILM has an opening for the second illumination system at the center and a lens for the first illumination system at the periphery.

Since two kinds of illumination are performed in this manner, it is necessary to form two holograms of the reticle 2 as well.

FIG. 4 is an enlarged view of the reticle 2 in which the hologram of the circuit pattern is formed on the pattern surface 2a. FIG. 5 shows the hologram observed from the irradiation direction, and FIG. 6 shows the hologram observed from the opposite direction. These will be used to explain two types of holograms.

The area A1 to A3 and the area A2 to A4 in FIG. 4 are illuminated by the first illumination system using the elliptical mirror 3 described with reference to FIG. The hologram in this part is created with reference light as vertical illumination. On the other hand, the area from A1 to A2 in FIG. 4 is illuminated by the second illumination system that does not use the elliptical mirror 3. The hologram here is
Created as non-perpendicular reference light.

In FIG. 5, a hologram HR1 in which the reference light is vertical on the outside, and a hologram HR2 in which the reference light is not vertical on the inside.
Range.

In FIG. 6, the outer side is a hologram HR1 in which the reference light is vertical, the middle area is an area where no hologram is formed, and the center is the area of the entrance where the spherical silicon 1 is inserted.

The hologram pattern of the reticle 2, in which two kinds of hologram patterns are formed on the surface of the hollow outer spherical surface, is supplied to an EB lithography machine for drawing a lithography reticle. Since the reticle is a sphere, the reticle may be created by an EB lithography machine capable of driving in the thickness direction (Z direction).

The hologram pattern at this time may be a computer generated hologram of a desired circuit pattern.

As shown in FIGS. 1 and 2, the reticle 2 is attracted to the mask chuck M / C on the mask stage M / S near the elliptical mirror 3 and the spherical silicon 1 through the tee T is transferred to the reticle 2. When the reticle 2 and the spherical silicon 1 are inserted into the hollow portion and a desired distance (gap) between the reticle 2 and the spherical silicon 1 comes close to each other, collective exposure is performed.

The pattern transfer exposure method has been described so far. Next, a method proposed in the present invention for alignment will be described, and an embodiment of an actual exposure sequence will be described.

First, the hardware for alignment in FIG. 1 will be described.

As shown in one embodiment of the present invention in FIG. 1, a plurality (four in FIG. 1) of spherical silicon 1 is adsorbed and supported on the tee T of the holder H.

The holder H is configured so that the plurality of spherical silicon pieces 1 sucked by the tee T can be conveyed from the outside of the exposure apparatus while being sucked.

The holder H is attracted to the chuck C. Z stage Z / S that can be driven Z under chuck C,
An XY stage XY / S with a laser interferometer is configured under the XY stage, and the spherical silicon 1 can be controlled three-dimensionally by moving the holder H.

As shown in FIG. 1, at least two three-dimensional detection systems 3AS are formed in the vicinity of the exposure station (one more in the direction perpendicular to the plane in FIG. 1).

An actual embodiment of the three-dimensional detection system 3AS may be the same as the three-dimensional detection system of the alignment station AS described later with reference to FIGS.

FIG. 9 is an enlarged view of a holder H in which four spherical silicon pieces 1 are teed up at intervals L, and FIG. 10 is a view from above.

In FIG. 10 showing the upper surface of the holder H, alignment marks RM are arranged on the left and right of each spherical silicon 1. This alignment mark RM (RM-X, RM
FIG. 11 is an enlarged view of -Y).

Next, the alignment sequence will be described.

FIG. 12 is a schematic flowchart showing an alignment sequence.

As shown here: 1) A plurality of spherical silicons 1 (abbreviated as BS in the schematic flow chart of FIG. 12) are tee-adsorbed to a holder H outside the exposure machine. 2) The positional relationship between each spherical silicon 1 and the left and right alignment marks RM on the upper surface of the holder H is measured outside the exposure apparatus (hereinafter, the holder H is considered as an alignment target). 3) After the measurement of the positional relationship, the plurality of spherical silicons 1 are transported to the exposing machine while being tee-up-adsorbed on the holder H. 4) In the vicinity of the exposure machine, the three-dimensional position of only the left and right alignment marks RM is measured as shown in FIG. 14 described later (six axes, ie, X, Y, Z directions and X, Y, since three-dimensional is controlled). , Measurement of rotation around Z). 5) Next, the spherical silicon 1 is tee-adsorbed onto the holder H below the reticle 2 by an XY stage with a laser interferometer based on the measurement information of 2) and 4).
The exposure is performed by moving from the alignment scope position of the exposure machine to the exposure position while reflecting the correction value (see FIG. 14 described later).
To FIG. 17). 6) By performing the above 4) and 5) on a plurality of spherical silicons 1, all the exposures are completed (2 described above).
May be measured once in advance, thereby improving the throughput.) Alignment is possible by the following sequence.

FIGS. 13 to 20 show the above 3) to 6).
That is, an embodiment in which the exposure is performed after the alignment between the holder H and the exposing machine is performed by the two three-dimensional position detection systems 3AS. FIGS. 21 and 22 show the above 1) to 2), ie, each spherical silicon and the holder H. 2 shows an embodiment showing that the positioning is performed.

FIG. 13 is a view showing the alignment start position with respect to the arrangement of the holder and the exposure machine. The leftmost spherical silicon 1-1 has moved to the lower part of the three-dimensional detection system 3AS as an alignment scope located near the exposure apparatus.

FIG. 14 is a diagram showing the position detection of the holder H in the vicinity of the leftmost spherical silicon 1-1 by moving in the Z direction (upper part in the figure) from FIG. In FIG. 14, another three-dimensional position detection system 3AS exists in the direction perpendicular to the paper surface, and simultaneously detects left and right alignment marks RM1-1L and RM1-1R on the holder H.

Next, as shown in FIG. 15, the holder H is driven downward in the figure. Then, as shown in FIG. 16, the holder H is driven to the left in the figure, and the leftmost spherical silicon 1-1 is positioned below the exposure machine.

Next, as shown in FIG. 17, the holder H is driven to the upper side in the figure, and pattern exposure is performed on the leftmost spherical silicon 1-1. This drive amount reflects the correction value based on the measurement information of the sequences 2) and 4) as described in the above sequence 5).

At this time, the distance L (FIG. 14) between the three-dimensional position detection system 3AS and the exposing machine is made equal to the distance L (FIG. 13) of each spherical silicon, so that the pattern on the spherical silicon 1-1 can be obtained. At the same time as performing exposure, the adjacent spherical silicon 1-
2 Right and left alignment marks RM on the holder H near
The three-dimensional position detection of 1-2L and RM1-2R can be performed.

The distance (L in FIG. 14) between the three-dimensional position detection system 3AS and the exposing machine and the distance L between each spherical silicon (FIG. 1)
The allowable deviation error from 3) L) is defined as follows. That is, the error of adsorbing each spherical silicon to the tee T,
From the sum of the distance between the exposure device and the three-dimensional position detection system 3AS including the error in the creation of the distance of the tee T in the holder H, the error in attaching the tee to the holder, and the change over time in L in FIG.
The detection range of the three-dimensional position detection system 3AS in the XY directions (FIG. 17)
Should be larger). The point is that the alignment mark of the next spherical silicon can be measured while the previous spherical silicon is being exposed.

After the exposure and three-dimensional position detection are completed, the leftmost spherical silicon 1-1 is positioned below the exposing machine and the next spherical silicon 1-2 is positioned below the alignment detection system as shown in FIG. Let it. Next, as shown in FIG. 19, the holder H is driven to the left in the figure to position the adjacent spherical silicon 1-2 below the exposure machine. Then, as shown in FIG. 20, with the pattern exposure on the adjacent spherical silicon 1-2, the left and right alignment marks RM1-3 on the holder H in the vicinity of the adjacent spherical silicon 1-3.
The three-dimensional position detection of L, RM1-3R is performed.

The three-dimensional position detection method will be described later with reference to FIGS.

By repeating the above sequence, alignment and exposure of a plurality of spherical silicons 1 can be performed.

Next, an embodiment in which the three-dimensional positional relationship (including not only the XY directions but also the Z directions) between the holder H and the plurality of spherical silicons 1 is determined before exposure will be described.

First, FIG. 23 shows a flow for explaining the flow from suction to exposure. It is divided into three, and they are called a suction station CS, an alignment station AS, and an exposure station ES, respectively.

The adsorption station CS is a place where a plurality of spherical silicons 1 are adsorbed to the portion of the tee T of the holder H.

The plurality of spherical silicons 1 are coated with a photoresist or the like as a photosensitive agent on the surface thereof for exposure, placed on the tee T of the holder H, and then supported by vacuum or electrostatic suction. You. After the tee-up suction, the holder H can be moved as it is from the suction station CS to the alignment station AS and from the alignment station AS to the exposure station ES.

The accuracy of adsorbing the plurality of spherical silicon pieces 1 on the tee T of the holder H is three-dimensional (X, Y,
It is conceivable that the error of the rotation component of the Z) axis is sufficiently small to be negligible from the pattern formation accuracy of the spherical silicon 1, that is, only the errors in the X, Y, and Z directions are generated.

Next, the holder H is moved from the suction station CS to the alignment station AS while performing tee-up suction.

The alignment station AS has an XY stage XY / S that can drive the holder H in a three-dimensional direction.
And at least one three-dimensional detection system 3AS. The three-dimensional detection system 3AS as an alignment optical system is provided by using a stage drive, and is provided in common with only one alignment mark in total of three alignment marks near the top of the spherical silicon and the left and right alignment marks of the holder H. Is also good
Instead of using the stage drive, three pieces may be provided corresponding to each alignment mark.

FIGS. 21 and 22 show an alignment station AS in which the spherical silicon 1 is placed on the tee T of the holder H.
It is explanatory drawing which measures the three-dimensional relative positional relationship between the holder H and spherical silicon 1 which are teeed up and adsorbed.

FIG. 21 shows an alignment station AS.
FIG. 3 is a diagram showing an embodiment in which three-dimensional position detection is performed by a three-dimensional detection system 3AS using an alignment mark near the top of the spherical silicon 1-1.

FIG. 22 is a diagram showing three-dimensional position detection using the left and right alignment marks of the holder H near the spherical silicon 1-1 in the three-dimensional detection system 3AS.

In FIGS. 21 and 22, three-dimensional detection is performed by the three-dimensional detection system 3AS as follows.

Light from Halogen Lamp 11 and Reflecting Mirror 1
2 passes through the wavelength selection filters 13a (longer wavelength side) and 13b (shorter wavelength side), and the wavelength is selected and enters the fiber 14. The light emitted from the exit end of the fiber 14 is condensed by a condenser lens 15, an aperture stop 16, a field stop 17, a dichroic mirror 18, an illumination system lens 19, a prism 20, a quarter-wave plate (composed of 21a and 21b), and an objective lens. In FIG. 21 through 101, the spherical silicon 1-1
An alignment mark (not shown, but may have the same shape as the alignment mark RM in FIG. 11) near the top is illuminated. In FIG. 22, an alignment mark RM1-1L in the holder H near the spherical silicon 1-1 is illuminated. I do.

The light reflected by the alignment mark is reflected by the objective lens 101, a quarter-wave plate (composed of 21a and 21b).
The polarization state changes through the surface 20 of the prism 20.
a, a two-dimensional imaging device 2 such as a CCD camera via a relay lens 22 and an erector lens 23
4 is formed. In the two-dimensional image sensor 24, the alignment mark (not shown) near the top of the spherical silicon 1-1 or the alignment mark RM1-1L on the holder H near the spherical silicon 101 is moved in the X and Y directions from the image position. Detects misalignment.

The image of this mark is photoelectrically converted and processed.
A so-called image processing alignment method is disclosed in, for example,
The method described in Japanese Patent No. 61820 is used.

Next, position detection in the Z direction will be described with reference to FIGS.

The light emitted from the Z-direction detection unit 25 is reflected by the dichroic mirror 18 and passes through the illumination system lens 19, the prism 20, a quarter-wave plate (composed of 21a and 21b), and the objective lens 101 as shown in FIG. Then spherical silicon 1-1
In FIG. 22, an alignment mark (not shown) near the top is illuminated with an alignment mark RM1-1L on the holder H near the spherical silicon 1-1. The light reflected by the mark is applied to the objective lens 102, the quarter-wave plate (21a and 2a).
1), the surfaces 20a, 20b of the prism 20
Incident on. The characteristics of the surfaces 20a and 20b of the prism 20 are set as a polarization beam splitter at the above-described wavelength for position detection in the X and Y directions, and a characteristic of transmission at the wavelength for position detection in the Z direction.

Then, the light transmitted through the prism 20 is reflected by the dichroic mirror 18, enters the Z-direction detecting unit 25, and performs Z-direction position detection by detecting a beam position shift on the sensor.

When only one three-dimensional detection system 3AS is configured in the alignment station AS, similarly to the positioning mark RM1-1R on the right side of the holder H near the spherical silicon 1-1, the XY stage XY / S Is moved in the direction perpendicular to the paper surface, and then the left alignment mark RM1-
The same measurement may be performed using 1L.

As described above, the holder H and the spherical silicon 1
A three-dimensional relative positional relationship with -1 is known. By repeating this similarly for the spherical silicon 1-2 and thereafter, the three-dimensional relative positional relationship between the plurality of spherical silicon 1 adsorbed on the holder H and the (alignment mark RM of) the holder H can be determined. The holder H is moved from the alignment station AS to the exposure station ES while the plurality of spherical silicon pieces 1 are stored in the memory of the connected computer and the plurality of spherical silicon pieces 1 are sucked up in a tee-up manner, and the exposure is performed as described above.

This XY at the alignment station AS
If another Z-direction position detection system 3AS is provided in FIG. 21 and FIG. 22 in the direction perpendicular to the paper surface, the position of the holder H in the vicinity of the spherical silicon 1-1 is adjusted by the detection system. The marks RM1-1L, R can be measured without moving the XY stage XY / S in the direction perpendicular to the paper surface.

(Other Embodiments) Although the hologram described above has a curved shape corresponding to the spherical surface of the spherical device material, it may be a flat hologram, in other words, a circuit curved on the spherical surface of the spherical device material. Any material that can form a pattern image may be used.

The above-mentioned hologram may be made of a kinoform which is understood as a kind of computer hologram. The kinoform is "a computer generated hologram designed to realize the highest efficiency phase hologram." (The Institute of Electronics and Communication Engineers Takataka Ohkoshi "Holography"
P204).

In the embodiment shown in FIG. 2, an image processing system is adopted as the two-dimensional position detection system, but the present invention is not limited to this.

As another method, a method of relatively scanning laser light or a heterodyne interference method may be used. To the last, it can be applied in the same way by adopting the position detection method that can measure the relative relationship between the spherical silicon and the alignment mark on the holder two-dimensionally with or without using the alignment mark, The object of the present invention can be achieved.

The same applies to the detection method in the Z direction, and the present invention is not limited to the beam position shift method by oblique irradiation employed as the embodiment of the present invention in FIG. An astigmatism method for observing a change in beam shape may be used, or a method using a capacitance sensor may be used.

The three-dimensional position detection method at the alignment station AS and the exposure station ES may be performed by another detection method.

In the exposure station ES shown in FIG. 1, the three-dimensional position of each reference mark on the holder is measured. However, it is also possible to measure at least two reference marks using the holder. At that time, the six-axis position control of each spherical silicon at the exposure station ES may be performed based on the measurement result of the relative relationship between each spherical silicon and the alignment mark on the holder at the alignment station AS.

The number of alignment scopes as a three-dimensional position detection system is one at the alignment station AS (total of three alignment marks near the top of the spherical silicon and the left and right alignment marks of the holder H using the stage drive). The alignment marks are sequentially detected to recognize the relative positional relationship between the spherical silicon and the holder H),
Then, it is described that two exposure stations ES are provided (the left and right alignment marks of the holder H are simultaneously detected and the relative positional relationship between the holder H and the exposure machine is recognized without using the stage drive). When the number of spherical silicons is m, the number may be m in the alignment station AS and 2 m in the exposure station ES.

Alternatively, as the number of alignment optical systems,
At the alignment station AS, three (the above three alignment marks are detected simultaneously without using the stage drive,
Recognize the relative positional relationship between the spherical silicon and the holder H), and two at the exposure station ES (simultaneous detection of the left and right alignment marks of the holder H without using the stage drive, and the (Recognition of the relative positional relationship) is described, but when the number of spherical silicon is m, 3 m
And the exposure station ES may be 2 m.

[0080]

As described above, according to the present invention, a circuit pattern can be transferred at high throughput to a wide area of a spherical surface of spherical silicon, and an exposure apparatus and a method for manufacturing a spherical device suitable for spherical device exposure can be provided. .

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram of an illumination system using an elliptical mirror.

FIG. 3 is a diagram of an illumination system that does not use an elliptical mirror.

FIG. 4 is a diagram of an embodiment of the reticle of the present invention, wherein A1 on the right side is shown.
FIG. 3 shows the range of the hologram of the illumination light not using the elliptical mirror from A to A2, and the left side A1 to A3 shows the range of the hologram of the illumination light using the elliptical mirror.

FIG. 5 is a view of the reticle of FIG. 4 viewed from an irradiation direction, in which a central portion shows a range of a hologram of illumination light not using an elliptical mirror and an outside shows a range of a hologram of illumination light using an elliptical mirror; .

FIG. 6 is a view of the reticle of FIG. 4 viewed from the opposite direction. The central portion is an entrance into which the spherical silicon 1 is inserted, the outside is a range where no hologram is formed, and the outermost is an illumination using an elliptical mirror. The figure which shows the range of the hologram of light.

FIG. 7 is a diagram showing a semiconductor device in which a plurality of spherical silicons are connected via bumps.

FIG. 8 is a diagram showing a comparative example in which pattern transfer is performed only on a narrow spherical area of spherical silicon.

FIG. 9 is an explanatory view of a holder that sucks spherical silicon by teeing up the tee.

FIG. 10 is an explanatory diagram of a holder provided with a position detection mark.

FIG. 11 is an explanatory diagram of a position detection mark in the XY directions.

FIG. 12 is a view showing a schematic flowchart showing an alignment sequence.

FIG. 13 is a view showing a start arrangement with respect to an arrangement of a holder and an exposure machine.

FIG. 14 is a view showing position detection of a holder portion near the leftmost spherical silicon.

FIG. 15 is a diagram in which the leftmost spherical silicon is positioned below the alignment detection system.

FIG. 16 is a diagram in which the leftmost spherical silicon is located below the exposure machine.

FIG. 17 is a diagram showing the pattern exposure on the leftmost spherical silicon and the detection of the position of the holder near the adjacent spherical silicon.

[FIG. 18] The spherical silicon on the left end is positioned below the exposure machine.
The figure which located the adjacent spherical silicon below the alignment detection system.

FIG. 19 is a view in which an adjacent spherical silicon is positioned below an exposure machine.

FIG. 20 is a diagram showing pattern detection on a neighboring spherical silicon and position detection of a holder portion near the next neighboring spherical silicon.

FIG. 21 is a diagram showing three-dimensional position detection in the vicinity of the top of spherical silicon in a three-dimensional position detection system.

FIG. 22 is a diagram showing three-dimensional position detection of a holder portion near a spherical silicon in a three-dimensional position detection system.

FIG. 23 is a diagram illustrating a flow for explaining a flow from suction to exposure.

[Explanation of symbols]

Reference Signs List 1 spherical silicon 2 reticle B bump 2a hologram surface / reticle 2b hollow surface / reticle 3 elliptical mirror / illumination optical system F one focal point of elliptical mirror (focusing point) F2 another focal point of elliptical mirror (center of spherical silicon) H Holder T Tee 5 Exposure light source (EX excimer laser) ILM Illumination optical system HR1 Hologram where reference light is vertically incident HR2 Hologram where reference light is not vertically incident M / S Mask stage XY / S XY stage with interferometer Z / S Z stage C chuck 11 Halogen lamp 12 Reflector 13a Wavelength selection filter (long wavelength side) 13b Wavelength selection filter (short wavelength side) 14 Fiber 15 Condenser lens 16 Aperture stop 17 Field stop 18 Dichroic mirror (Transmit to XY detection light, Z detection Dichro reflecting light 19) Illumination system lens 20 Prism 20b Reflecting surface of prism 20 (a dichroic characteristic surface that transmits a XY detection light through a polarizing beam splitter and a Z detection light) 21a, 21b λ / 4 plate (configured with two) 101 Object Lens 22 Relay lens 23 Erector lens 24 Two-dimensional image sensor such as CCD camera 25 Z-direction detector unit Alignment mark on RM holder 3AS Three-dimensional position detection system

Claims (12)

[Claims] 1. A spherical device comprising: a circuit pattern corresponding to a spherical surface of a spherical device material; and means for exposing the circuit pattern on the spherical surface of the spherical device material over a half or more area of the entire spherical surface at a time. Device exposure equipment. 2. The spherical device exposure apparatus according to claim 1, wherein said circuit pattern is formed by a hologram. 3. An illumination system for illuminating the circuit pattern,
A focusing optical system for focusing light at a first position in an illumination optical path; and an elliptical mirror having the first position as a first focal point and a central position of the spherical device material when properly disposed as a second focal point. The spherical device exposure apparatus according to claim 1. 4. The spherical device exposure apparatus according to claim 2, wherein the hologram includes a first hologram and a second hologram corresponding to the first and second regions of the spherical surface of the spherical device material, respectively. 5. A first illumination system for illuminating the first hologram, a condensing optical system for condensing light at a first position in an illumination optical path,
A second illumination system for illuminating the second hologram, the elliptical mirror including an elliptical mirror having a second focal point at the center position of the spherical device material when the first position is the first focal point and the central position of the spherical device material is properly arranged; 5. The spherical device exposure apparatus according to claim 4, wherein the illumination is performed without using the light. 6. The spherical device exposure apparatus according to claim 5, wherein the second illumination system illuminates the second hologram with a parallel light beam passing through an opening in the condensing optical system. 7. The spherical device exposure apparatus according to claim 1, further comprising a tee for supporting the spherical device material. 8. The spherical device exposure apparatus according to claim 7, further comprising a holder for holding the plurality of spheres of the spherical device material and an alignment mark near a top of the spherical device material. 9. The exposure apparatus according to claim 8, further comprising a three-dimensional position detection system for detecting the alignment mark. 10. The spherical device exposure apparatus according to claim 9, wherein a pair of the alignment marks provided on the holder are provided, and a pair of the three-dimensional position detection systems are provided corresponding to the alignment marks. 11. A method comprising the steps of: providing a circuit pattern corresponding to a spherical surface of a spherical device material; and exposing the circuit pattern to the spherical surface of the spherical device material over one half or more of the entire spherical surface. Method for manufacturing spherical devices. 12. A plurality of spherical device materials are held in a holder, and the spherical device material and the holder
12. The three-dimensional positional relationship between the exposure apparatus and the holder is measured before exposure, and the three-dimensional positional relationship is measured before exposure.
The method for producing a spherical device according to the above.