JPH10254146A - Processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent failure due to electrification by suppressing the electrification of a treated substrate. SOLUTION: This apparatus includes a spin chuck 21 for holding an LCD substrate G and a developer supplying nozzle 22 for supplying a developer to the surface of this LCD substrate G. In such a case, this spin chuck 21 comprises a loading section 21a to be placed with the LCD substrate G and a boss section 21b for mounting a revolving shaft projecting to the central part on the rear surface of this loading section 21a. The loading section 21a is formed of a synthetic resin member. This boss section 21b is formed to the diameter smaller than the diameter of the loading section 21a and the loading section 21a is formed to a large thickness. As a result, the electrification of the LCD substrate G is suppressed and the failure due to the electrification is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for supplying a processing liquid such as a developing solution to a surface of a substrate to be processed such as an LCD substrate.

[0002]

2. Description of the Related Art Generally, in the field of semiconductor technology, when a semiconductor layer, an insulator layer, and an electrode layer formed on a substrate to be processed, for example, an LCD substrate, are selectively etched into a predetermined pattern, a semiconductor wafer is formed. A series of processes for reducing a circuit pattern or the like using a photolithography technique similar to the case, transferring the circuit pattern to a photoresist, and developing the same are performed.

For example, an LCD substrate, which is a substrate to be processed, is cleaned by a cleaning device, the LCD substrate is subjected to hydrophobic treatment by an adhesion processing device, cooled by a cooling device, and then photoresist is coated by a resist coating device. A film, that is, a photosensitive film is applied and formed. Then, after the photoresist film is heated by a heat treatment device and subjected to a baking treatment, a predetermined pattern is exposed by an exposure device, and the exposed L is exposed.
After developing and applying the developing solution to the CD substrate with a developing device, the developing solution is roughly flown with a rinsing solution to complete the developing process.

In performing the above-described processing, a substrate to be processed such as an LCD substrate is held by a spin chuck as a holding means, and a processing liquid such as a developing solution is supplied to the surface of the LCD substrate or the like. There is known a spin rinsing method in which a developer is horizontally rotated to wash a developer or the like with pure water.

[0005]

However, in a conventional processing apparatus of this type, since the spin chuck is generally formed of an aluminum alloy member, the spin chuck is rotated during the rinsing process to generate a rinsing liquid. When pure water is supplied, the LCD substrate is charged by the frictional action between the pure water and the LCD substrate, and there is a problem that the device in the LCD substrate is broken by static electricity due to the charging.
Even in the case of an LCD substrate having no device, discharge occurs from the charged substrate to the transfer arm, and this discharge phenomenon causes electrostatic noise from the transfer arm, causing a problem in the transfer device.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a processing apparatus for suppressing charging of an LCD substrate.

[0007]

According to a first aspect of the present invention, there is provided a holding means for holding a substrate to be processed, and a processing liquid supply for supplying a processing liquid to a surface of the substrate to be processed. Wherein the holding means has a mounting portion for mounting the substrate to be processed, and the mounting portion is formed of a synthetic resin member. .

According to a second aspect of the present invention, in the processing apparatus of the first aspect, a static elimination fluid supply means for supplying a static elimination fluid toward the mounting portion is provided above the holding means. It is characterized by.

According to a third aspect of the present invention, in the processing apparatus of the first aspect, a static elimination fluid supply means for supplying a static elimination fluid to the holding means and the substrate to be processed is provided below the holding means. It is characterized by the following.

In the present invention, for example, an ionized gas, a liquid such as pure water or isopropyl alcohol (IPA), or the like can be used as the fluid for static elimination.
Further, as the static elimination fluid supply means, for example, an ionizer that generates an ionized gas, a pure water supply nozzle that ejects pure water, an IPA supply nozzle that ejects IPA, or the like can be used. As a static elimination fluid, for example, pure water or IP
When a liquid such as A is used, it is preferable to provide a dry gas supply means for supplying a dry gas toward the holding means above or below the holding means (claim 4).
In this case, as the dry gas, for example, nitrogen (N2) gas or purified air can be used.

Further, the holding means can be composed of the mounting portion described above and a boss for mounting a rotating shaft projecting from the center of the lower surface of the mounting portion, and the boss portion is different from the mounting portion. It can be formed of a material such as a metal member or a synthetic resin member similar to the mounting portion. When the boss is formed of a metal member,
It is preferable that the diameter of the boss is smaller than the diameter of the mounting part.

According to the first aspect of the present invention, the amount of charge on the substrate to be processed can be reduced by forming the mounting portion of the holding means with a synthetic resin member. Therefore, by suppressing the charging of the substrate to be processed, it is possible to prevent electrostatic damage such as electrostatic destruction of a device formed on the substrate to be processed due to the charging of the substrate to be processed, and also to prevent the substrate from being processed to the transfer means. , It is possible to prevent discharge noise disturbance due to the discharge phenomenon.

According to the second or third aspect of the present invention, the mounting portion of the holding means is formed of a synthetic resin member, and a discharging fluid is supplied to the holding means above or below the holding means. By doing so, the charging of the holding unit can be suppressed, and further, the charge charged on the holding unit can be eliminated. Therefore, it is possible to more reliably prevent electrostatic damage such as electrostatic destruction of a device formed on the processing target substrate due to charging of the processing target substrate, and to reduce discharge noise interference due to a discharge phenomenon from the processing target substrate to the transporting means. Further, it is possible to surely prevent the occurrence.

According to the fourth aspect of the present invention, by supplying the dry gas from the dry gas supply means upward or downward to the holding means, the holding means is provided by the processing liquid supplied from the processing liquid supply means. Can promote drying of wet parts.

According to the fifth aspect of the present invention, the capacitance can be reduced by reducing the area of the boss as an electrode sandwiching the mounting portion, which is a dielectric, with the substrate to be processed. In addition, the charge amount of the substrate to be processed can be reduced.

According to the sixth aspect of the present invention, the thickness (distance) between the mounting portion and the boss portion, which are dielectric materials, is increased (increased).
By doing so, the charge amount of the substrate to be processed can be reduced.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings. Here, a case will be described in which the processing apparatus of the present invention is applied to an LCD substrate resist coating / developing processing system.

The above resist coating / developing system comprises:
As shown in FIG. 1, a loader unit 1 for loading and unloading an LCD substrate G (hereinafter, referred to as a substrate) as a substrate to be processed, a first processing unit 2 for the substrate G, and a first unit via a relay unit 3. And a second processing unit 4 connected to the processing unit 2. An exposure device 6 for exposing a predetermined fine pattern on a resist film via a transfer unit 5 can be connected to the second processing unit 4.

In the coating and developing system configured as described above, the unprocessed substrate G accommodated in the cassette 7 mounted on the cassette mounting table 8 is taken out by the loading / unloading tweezers 9 of the loader unit 1. X, Y (horizontal), Z (vertical) moving on the transport path 11 of the first processing unit 2
It is delivered to the main arm 10 that can be rotated in the direction and θ (rotated), and is transported into the brush cleaning device 12. The substrate G that has been brush-cleaned in the brush cleaning device 12 is cleaned with high-pressure jet water in the jet water cleaning device 13 as necessary. Thereafter, the substrate G is subjected to a hydrophobizing treatment by the adhesion treatment device 14 and cooled by the cooling treatment device 15, and then a photoresist film, that is, a photosensitive film is applied and formed by the resist coating device 16. The unnecessary resist film on the peripheral portion of the substrate G is removed by the coating film removing device 17. Then, the photoresist film is heated by the heat treatment device 18 and subjected to a baking process, and then a predetermined pattern is exposed by the exposure device 6. The exposed substrate G is transported into the developing device 20 by the X, Y, Z, and θ rotatable main arm 10a that moves on the transport path 11a of the second processing unit 4, and is developed by the developer. Thereafter, the developing solution is washed away with the rinsing liquid, and the developing process is completed. After the processed substrate G subjected to the development processing is accommodated in the cassette 7a of the loader unit 1,
It is carried out and transferred to the next processing step.

Next, the configuration of a processing apparatus (specifically, a developing apparatus) according to the present invention used in the above-described LCD substrate coating / developing processing system will be described.

First Embodiment As shown in FIGS. 2 and 3, the developing device 20 comprises a spin chuck 21 which is a holding means for holding a substrate G by vacuum suction and rotating in the horizontal direction, and 21, a container 30 surrounding the substrate G, a developing solution supply nozzle 22 (processing solution supply means) for supplying a developing solution as a processing solution to the resist film surface on the surface of the substrate G, and a circuit pattern on the surface of the substrate G after development. Cleaning liquid supply nozzle 23 for supplying a rinsing liquid (cleaning liquid) to the wafer, a moving mechanism 24 for moving the developing liquid supply nozzle 22 to a standby position provided on the right side of the drawing and a processing position above the substrate G, and above the spin chuck 21. An ionizer 25 (current eliminator supply means) for spraying a static elimination fluid, for example, ionized gas, toward the substrate G and the spin chuck 21 is provided.

The spin chuck 21 is shown in FIGS.
As shown in (a), a mounting portion 21a on which the substrate G is mounted
And a boss 21b for attaching a rotating shaft projecting from the center of the lower surface of the mounting portion 21a.
For example, it is formed of a synthetic resin member such as polyphenylene sulfide (PPS), and the boss 21b is formed of a metal member such as stainless steel (SUS). The spin chuck 21 thus configured can be considered as a capacitor in which the mounting portion 21a, which is a dielectric, is sandwiched between the substrate G and the electrodes of the boss portion 21b. (This time,
The substrate G is also a capacitor. In addition, the spin chuck 21 is connected to a motor 27 via a rotating shaft 26 attached to the boss 21b. The spin chuck 21 is configured to be able to move up and down by an elevating means (not shown). Further, the spin chuck 21 is connected to a vacuum device (not shown), and is configured to be capable of vacuum-sucking the substrate G mounted on the mounting portion 21a.

In this case, the diameter d of the boss portion 21b is made as small as possible with respect to the diameter D of the mounting portion 21a in consideration of the arrangement space of the spin chuck 21 and the allowable strength of the spin chuck 21. At the same time, the thickness h of the mounting portion 21a is formed as thick as possible. For example, the diameter d of the mounting portion 21a is 300 mmφ, the diameter d of the boss portion 21b is 30 mmφ, and the thickness h of the mounting portion 21a is 9 mm. The thickness H of the boss portion
Is formed to 30 mm. Generally, the capacitance C is represented by the following equation (1).

C = ε · S / h [F; Farad] (1) where C is the capacitance, ε is the dielectric constant, and h is the mounting portion 21
The thickness a and S are the surface area of the boss 21b. Therefore, the capacitance of the spin chuck 21 can be reduced by reducing the surface area S of the boss portion 21b serving as an electrode and increasing the thickness h of the mounting portion 21a serving as a dielectric.

Further, as shown in FIG.
By connecting the capacitor of 1a and the capacitor of the substrate in series, the total capacitance Call becomes: Call = Cc × Cg / (Cc + Cg) (2) where Cc is the capacitance of the mounting portion and Cg is the substrate. Is the capacitance. ｝, Which can be made smaller than the respective capacitances.

Further, assuming that the potential due to the charge formed by friction between the rinse liquid (pure water) and the substrate is V, the charge Qall stored in the substrate G and the mounting portion 21a is: Qall = (Cc × Qg + Cg × Qc) / (Cc + Cg) (3) where Qg is the charge on the substrate and Qc is the charge on the mounting portion. ｝ And Qall = Call × V. V is the substrate G
Is constant due to the electric charge generated by friction between the rinsing liquid and the liquid. Therefore, Cal
If l can be reduced, Qall can also be reduced. That is, Qg can be reduced.

On the other hand, the developer supply nozzle 22 is connected to a developer storage tank 40 via a developer supply tube 28, and a pump 41 provided in the developer supply tube 28.
And the opening and closing operation of the valve 42 supplies the developing solution. This developer supply nozzle 2
Reference numeral 2 denotes a structure in which a developer discharge hole is formed at an appropriate interval in a lower surface of a developer storage chamber having a length substantially equal to that of the substrate G (not shown).

Further, the cleaning liquid supply nozzle 23 is provided as shown in FIG.
As shown in FIG. 3, a head 23b is provided at the distal end of an arm 23a which is mounted so as to be rotatable (rotatable) in the horizontal direction. For example, a bottomed tubular mesh body (not shown) is attached. By attaching the mesh body to the tip end of the cleaning liquid supply nozzle 23 in this way, when the rinse liquid supply nozzle 23 discharges a rinsing liquid, such as pure water, and stops, the capillary action acts on the mesh part to rinse the mesh. The liquid can be held and the rinse liquid can be prevented from dropping.

The cleaning liquid supply nozzle 23 does not necessarily need to be formed so as to be rotatable in the horizontal direction, as shown in FIG. It may be.

The container 30 is provided with a spin chuck 2
1 and a lower container 31 located below the substrate G, and an outer container 32 located on the outer peripheral side of the spin chuck 21 and the substrate G, and an exhaust connected to an exhaust device (not shown) at the bottom of the lower container 31. A port 33 is provided, and a drain port 34 is provided at the bottom of the outer container 32.

On the other hand, the ionizer 25 is provided above the spin chuck 21. By blowing ionized gases of different polarities generated by the ionizer 25 toward the substrate G and the spin chuck 21, The charge charged to the G and the spin chuck 21 can be canceled.

Next, an operation mode of the processing apparatus configured as described above will be described. First, when the substrate G is transported to the processing apparatus 20 by the main arm 10, the spin chuck 21 rises to receive the substrate G, and holds the substrate G by vacuum suction driven by a vacuum device (not shown). afterwards,
The main arm 10 retreats from the processing device 20, and the spin chuck 21 descends. Next, the pump 41 is driven, and at the same time, the developing solution supply nozzle 22 is caused to scan in the short side or long side direction of the substrate G, thereby supplying the developing solution to the surface of the substrate G (liquid accumulation).

Next, after the developing solution supply nozzle 22 is retracted to the standby position and the developing process is performed for a predetermined time, the cleaning solution supply nozzle 23 is moved above the substrate G to supply the rinsing solution and drive the motor 27. By rotating the spin chuck 21, the developing solution remaining on the substrate G is roughly flown by the rinsing liquid. Then, after the supply of the rinsing liquid from the cleaning liquid supply nozzle 23 is stopped and the cleaning liquid supply nozzle 23 is retracted to the standby position, the spin chuck 21 is rotated at a high speed to remove the developer and the rinsing liquid adhering to the surface of the substrate G. Drying is performed by blowing off by centrifugal force to complete the development processing.

At this time, the substrate G and the spin chuck 21 are charged by friction of the rinsing liquid. Main developing device 2
In the case of 0, new substrates G are successively transported by the main arm 10a and the developing process is continuously repeated. Therefore, when the first substrate G is developed while the spin chuck 21 is not charged, the substrate G and the spin chuck 21 are slightly charged even by friction of a rinsing liquid during spin rinsing. Thereafter, the developed substrate G is removed from the developing device 20 by the main arm 10a, and the undeveloped substrate G is newly loaded into the developing device 20. Thereafter, the substrate G received from the spin chuck 21 is transported to a subsequent processing unit. When the developed substrate G and the undeveloped substrate G are exchanged, the ionizer 25 is driven and sprayed toward the spin chuck 21 to remove electricity. As described above, by removing the electric charge when the spin chuck 21 is replaced, the spin chuck 21 can be processed in a state where the spin chuck 21 is not always charged in the continuous processing. Therefore, the substrate G due to the friction of the rinsing liquid at the time of spin rinsing in the initial state. , And it is possible to prevent static electricity damage to the device of the substrate G and discharge noise trouble in the control system of the transport means.

On the other hand, if the ionization of the spin chuck 21 by the ionizer 25 is not performed when the developed substrate G and the undeveloped substrate G are exchanged, the developing process of the substrate G by the developing device 20 is repeated, whereby the spin chuck 21 is removed.
Is largely charged, so that the friction on the rinsing liquid during spin rinsing also increases the charge on the substrate G. for that reason,
There is a possibility that the device formed on the substrate G may be electrostatically damaged by the electric charge charged on the substrate G. In addition, when the substrate G is charged, noise is generated due to a discharge phenomenon from the charged substrate G to the transporting means, and there is a possibility that a discharge noise failure occurs in a control system of the transporting means.

Second Embodiment FIG. 5 is a schematic sectional view of a processing apparatus according to a second embodiment of the present invention, and FIG. 6 is an enlarged sectional view of a main part thereof.

In the second embodiment, a charge removing fluid is supplied from below the spin chuck 21 to remove charge from the charged spin chuck 21 and the substrate G. That is, a pure water supply nozzle 50 (static fluid supply means) for injecting a static elimination fluid, for example, pure water, is provided in a lower container 31 disposed below the spin chuck 21. This is a case where pure water is sprayed onto the chuck 21 and the substrate G to cancel the electric charges charged on the spin chuck 21 and the substrate G.

In this case, as shown in FIGS. 5 and 6, the lower container 31 is provided with an upright wall 31b0 on the inner peripheral side of a horizontal bottom portion 31a below the spin chuck 21 so that the lower container 31 is provided with a pure water supply nozzle 50. The injected pure water does not enter the rotating shaft 26 side of the spin chuck 21. In order to completely prevent intrusion of pure water into the rotating shaft 26, for example, N2 gas, air, or the like may be flowed through a gap between the rotating shaft 26 and the container 30 to make the rotating shaft 26 a positive pressure atmosphere. Good.

At another position below the spin chuck 21, for example, at a position facing the pure water supply nozzle 50, a dry gas supply nozzle for supplying a dry gas, for example, nitrogen (N 2) gas toward the spin chuck 21. 51 are provided. By injecting N2 gas between the spin chuck 21 and the substrate G from the dry gas supply nozzle 51, drying of the portion where the spin chuck 21 is wet by the pure water injected from the pure water supply nozzle 50 is promoted. be able to.

In the second embodiment, the other parts are the same as those in the first embodiment, and the same parts are denoted by the same reference numerals and description thereof will be omitted.

With the above-described structure, when the spin chuck 21 is rotated at a high speed to blow off the developing solution and the rinsing solution adhered on the surface of the developed substrate G by centrifugal force and dry, the pure water supply nozzle is used. Spin chuck 2 from 50
Pure water is sprayed on the substrate 1 and the substrate G to remove electricity from the spin chuck 21 and the substrate G. At the same time as the injection of pure water, the drying gas,
By injecting the gas between the spin chuck 21 and the substrate G, the spin chuck 21 and the back surface of the substrate G wet with pure water can be dried. Note that the injection timing of the N2 gas injected from the dry gas supply nozzle 51 does not necessarily need to be simultaneous with the supply of pure water, and may be delayed from the supply of pure water or after the supply of pure water is stopped. You may do so. Further, the supply of the N2 gas may be continuously performed even after the supply of the pure water is stopped.

Other Embodiments (1) In the above embodiment, the case where the boss portion 21b is formed of a metal member has been described, but it may be formed of a synthetic resin member such as PPS. Thus, the mounting portion 21a
The mounting portion 21a and the boss portion 21b can be integrally formed by forming the boss portion 21b and the boss portion 21b with the same material made of a synthetic resin such as PPS, and the thickness (distance) of the dielectric material Can be made thicker (longer), and the charge amount of the substrate G can be reduced.

(2) In the above embodiment, the case has been described where the charge eliminating fluid is ionized gas or pure water.
It is not necessary to use such a fluid. For example, instead of ionized gas, static elimination may be performed by irradiating the charged substrate G and the spin chuck 21 with soft X-rays, for example. A volatile liquid such as isopropyl alcohol (IPA) can be used instead of water. By using a volatile liquid such as IPA as the static elimination fluid, the need for a dry gas supply unit can be obviated, so that the number of components can be reduced and the size of the apparatus can be reduced. Further, as the drying gas, purified air may be used instead of the N2 gas.

(3) In the above embodiment, the case where the processing apparatus according to the present invention is applied to an LCD substrate developing apparatus has been described. However, other than the developing apparatus, for example, a resist coating apparatus, a semiconductor wafer other than the LCD substrate, a CD, or the like. Needless to say, the present invention can be applied to a processing apparatus for processing an object to be processed.

[0045]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a conventional aluminum alloy spin chuck, a synthetic resin spin chuck according to the present invention, and a charge elimination fluid, for example, an ionized gas, are supplied to check the charge amount of the spin chuck when the charge is eliminated. The experimental results will be described.

★ Experimental conditions ・ Comparative example: Spin chuck made of aluminum alloy ・ Example 1: Polyphenylene sulfide (PPS)
Spin chuck (see FIG. 4) The diameter D of the mounting portion 21a = 300 mmφ, the thickness H = 9 mm, the diameter d of the boss portion 21b d = 30 mmφ, and the thickness h = 30 mm. Second Embodiment: Ionization of the spin chuck of the first embodiment Irradiated gas ・ Rinse time: 20 seconds.

The relationship between the number of processed substrates G and the amount of charge (potential) was examined using the comparative example, Example 1 and Example 2 under the same conditions for the development of the substrate G. FIG. The results shown were obtained.

As a result of the above license, when the conventional aluminum alloy spin chuck was used, the potential was about -4.5 to -5 kV regardless of the number of substrates G processed. On the other hand, in the PPS spin chuck of Example 1, the potential at the start of the process was about +1 kV,
When the number of processed sheets was increased to 10 sheets, the potential gradually increased to about 1.5 kV. It should be noted that the potential did not change much even when 10 or more sheets were processed. In contrast, in the case of Example 2, the potential of the substrate G was about 0 kV, and it was found that the substrate G had a sufficient charge-suppressing effect.

[0049]

As described above, according to the present invention,
With the configuration described above, the following effects can be obtained.

1) According to the first aspect of the present invention, since the charging of the substrate to be processed can be suppressed, it is possible to prevent electrostatic damage such as electrostatic destruction of devices formed on the substrate to be processed. At the same time, it is possible to prevent a discharge noise disturbance to the control system of the transfer means due to noise due to a discharge phenomenon from the substrate to be processed to the transfer means.

2) According to the invention described in claim 2 or 3,
In addition to the above 1), it is possible to eliminate the charge on the holding means.
It is possible to prevent electrostatic damage such as electrostatic breakdown of a device formed on the substrate to be processed, and also to prevent discharge noise damage to the control system of the transport unit due to noise due to a discharge phenomenon from the substrate to the transport unit. be able to.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a coating / developing processing system incorporating a processing apparatus according to the present invention.

FIG. 2 is a schematic sectional view showing a first embodiment of a processing apparatus according to the present invention.

FIG. 3 is a schematic plan view taken along line AA of FIG. 2;

4A is a schematic side view showing a spin chuck according to the present invention, and FIG. 4B is an equivalent circuit diagram when the substrate and the spin chuck are charged.

FIG. 5 is a schematic sectional view showing a second embodiment of the processing apparatus according to the present invention.

FIG. 6 is a sectional view showing a main part of the second embodiment.

FIG. 7 is a graph showing the relationship between the number of processed wafers and the potential when a conventional spin chuck, a spin chuck according to the present invention, and a static elimination fluid are supplied.

[Explanation of symbols]

 G LCD substrate (substrate to be processed) 21 Spin chuck (holding unit) 21a Placement unit 21b Boss unit for attaching rotation shaft 22 Developer supply nozzle (treatment liquid supply unit) 25 Ionizer (fluid supply unit for static elimination) 50 Pure water supply Nozzle (fluid supply means for static elimination) 51 Dry gas supply nozzle (dry gas supply means)

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsuhiro Sakai Otsu-cho, Kikuchi-gun, Kumamoto Pref. Takaono character Heisei 272-4 Tokyo Electron Kyushu Co., Ltd. Otsu office

Claims (6)

[Claims] 1. A processing apparatus comprising: a holding unit for holding a substrate to be processed; and a processing liquid supply unit for supplying a processing liquid to a surface of the substrate to be processed, wherein the holding unit mounts the substrate to be processed. A processing apparatus comprising: a mounting portion for mounting; and the mounting portion is formed of a synthetic resin member. 2. The processing apparatus according to claim 1, further comprising a static elimination fluid supply unit that supplies the static elimination fluid toward the mounting unit above the holding unit. . 3. The processing apparatus according to claim 1, further comprising a discharging fluid supply unit for supplying a discharging fluid to the holding unit and the substrate to be processed, below the holding unit. Processing equipment. 4. The processing apparatus according to claim 2, wherein a dry gas supply unit that supplies a dry gas toward the holding unit is provided above or below the holding unit. apparatus. 5. The processing apparatus according to claim 1, wherein said holding means has a boss for attaching a rotating shaft projecting from a center of a lower surface of said mounting portion, and said boss is made of metal. And a boss portion having a diameter smaller than that of the mounting portion. 6. The processing apparatus according to claim 1, wherein said holding means has a rotation shaft mounting boss protruding at a center portion of a lower surface of said mounting portion, and combines said boss portion. A processing apparatus formed of a resin member.