JPH10233539A - Laminated body containing compound semiconductor and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high sensitivity semiconductor sensor having a good temp. characteristic and its manufacturing method by manufacturing Inx Ga1-x Asy Sb1-y (0<x<=1.0, 0<=y<=1.0) thin film with no disturbance in crystal lattice to be used as a sensor layer. SOLUTION: A high-resistance first compound semiconductor layer 2, an Inx Ga1-x Asy Sb1-y (0<x<=1.0, 0<=y<=1.0) layer formed on it, and an electrode formed on it constitute a semiconductor sensor. The first compound semiconductor has the same, or near, lattice constant as the crystal constituting a sensor layer 3, further, has a band gap energy larger than the crystal. The second compound semiconductor layer of the same characteristics as the first compound semiconductor layer 2 may be formed on the upper surface of the sensor layer 3. The semiconductor sensor provides, when used for a magnetic sensor, exceptionally high sensitivity and high output, while dependency of resistance value and Hall output on temperature is very small. Further, it can be used at high temperature with high reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel semiconductor sensor.

[0002]

2. Description of the Related Art InAs is a material having an extremely high electron mobility, and has been expected to be applied to a high-sensitivity magnetic sensor and the like. 1) The higher the electron mobility, the better the crystallinity. It is difficult to grow InAs thin film. 2) I
Since the band gap of nAs is narrow, when used as a magnetic sensor, there is a problem in both the manufacturing process and the element characteristics that the temperature characteristics at high temperatures are inferior.

Hitherto, attempts have been made to grow InAs thin films on various substrates, but the lattice constant of an insulating substrate for growing a single crystal of the thin film is significantly different from that of InAs.
For this reason, the InAs crystal grown on the substrate has lattice disorder near the interface with the substrate, resulting in low electron mobility,
The properties have not been sufficiently obtained. In addition, a film having such characteristics has a large fluctuation in characteristics due to the manufacturing process of the element, and the temperature characteristics of the resistance tend to deteriorate.
For this reason, when attempting to manufacture a magnetic sensor using a thin InAs thin film as a magnetic sensing part, the electron mobility is lowered, and it is difficult to manufacture a magnetic sensor with high sensitivity.

Further, in order to improve the temperature characteristics of InAs, Ga-introduced In is introduced to widen the band gap.
A ternary mixed crystal system of GaAs has been attempted. InGaAs
InP exists as an insulating substrate whose lattice constant matches that of InP, but the composition ratio of In and Ga that lattice-match with InP is:
Only In _0.53 Ga _0.47 As, and there is no insulating substrate corresponding to an arbitrary composition of InGaAs. Therefore I
Even in the growth of InGaAs thin films having a lattice constant different from nP, lattice disorder generated at the interface with the substrate cannot be suppressed as in InAs, and InGaAs having high electron mobility cannot be suppressed.
It was difficult to obtain an s thin film.

[0005] Further, it is necessary to obtain a large sheet resistance value by reducing the thickness, but it is difficult to control the carrier concentration due to the disorder of the lattice. Therefore, the electron mobility is large and the sheet resistance value is low. It has been difficult to obtain an InAs-based thin film suitable for a large magnetic sensor.

As a technology of a magnetic sensor using an InAs thin film as a magneto-sensitive layer, Japanese Patent Publication No. 2-24033,
JP-A-61-20378 and JP-A-61-259583
There is an official gazette. In Japanese Patent Publication No. 2-24033, In
There has been proposed a Hall element in which the temperature sensitivity of the element is improved by doping the magnetic sensing layer of As with S and Si.
At a high temperature exceeding 100 ° C., a decrease in element resistance was observed, and there was a problem in reliability when a Hall element was used at a high temperature. JP-A-61-20378 discloses a semi-insulating Ga.
InAs or InGaAs grown on an As substrate
A Hall element using s as a magneto-sensitive layer has been proposed.
Lattice disorder was generated at the interface between the As substrate and the InAs layer, and the reliability and sensitivity at high temperatures were still insufficient due to the influence. Japanese Patent Application Laid-Open No. 61-259583 proposes a Hall element using InAs formed on a sapphire substrate as a magneto-sensitive layer. However, a decrease in element resistance at a high temperature exceeding 100 ° C. is observed. However, the reliability when used at a high temperature was insufficient. For this reason, there has been a demand for a technique for improving the sensitivity of a fundamental magnetic sensor different from the conventional one.

[0007]

SUMMARY OF THE INVENTION The present invention is to produce a sensor thin film layer having high electron mobility without disorder of the crystal lattice, and to provide a high-sensitivity semiconductor sensor which has no characteristic change due to the process and has excellent temperature characteristics. It is intended to be realized.

[0008]

The present inventor has solved the problems of the InAs-based thin film, studied a method for manufacturing a sensor thin film layer having a high electron mobility, and worked on manufacturing a high-sensitivity semiconductor sensor. It is. As a result, after forming a compound semiconductor layer having a lattice constant equal to or close to that of InAs and having a larger band gap energy than InAs, and then crystal-growing InAs thereon, even if the film thickness is small, It has been found that a very large electron mobility of InAs can be obtained. Furthermore, it has been found that the use of the compound semiconductor layer lattice-matched to InAs makes it possible to form an InAs ultrathin film with good crystallinity, and to improve device characteristics from the quantum effect of the InAs ultrathin film. Also, I
In order to widen the band gap further than nAs, In
In InGaAs in which Ga is introduced into As, InG is also used.
It has been found that the use of a compound semiconductor layer lattice-matched to aAs makes it possible to form an InGaAs ultra-thin film with good crystallinity and to improve the temperature characteristics of a device.
Furthermore, they found that if the quantum effect of an ultrathin film was used, Sb could be introduced into InAs or InGaAs to achieve higher sensitivity, and the present invention was completed. That is, a high-resistance first compound semiconductor layer and an InA layer formed on the layer.
a magnetic sensor having an s layer and an ohmic electrode formed on the InAs layer, wherein the first compound semiconductor is In.
As has the same or similar lattice constant as As,
A magnetic sensor having a band gap energy larger than nAs. Further, the InAs layer is a ternary system in which Ga or Sb is introduced into the InAs layer, or a ternary system.
It may be an original mixed crystal. That is, the InAs layer is made of In _x G
_{a 1-x As (0 <} x <1. 0) or _{In x Ga 1-x As y} Sb
_{1-y (0 <x ≦} 1. 0, 0 ≦ y <1. 0) may be. Hereinafter, InAs _{layer, In x Ga 1-x As} (0 <x <1. 0) layer and _{In x Ga 1-x As y} Sb 1-y (0 <x ≦ 1. 0, 0 ≦ y
_<1. 0) layer collectively being referred to as the sensor layer.

Further, on the upper surface of the sensor layer, a high-resistance second compound semiconductor layer having a lattice constant equal to or close to that of the crystal constituting the sensor layer and having a band gap energy larger than that of the crystal. May be formed.

Further, in order to reduce defects at the interface between the sensor layer and the first and second compound semiconductor layers and to realize high electron mobility, one or both of the bonding species at the interface are formed on the sensor layer side. III selected from the crystals constituting the sensor layer
The group and the first and second compound semiconductor layers are preferably formed from a group V selected from the compound semiconductors.
The bonding species at the interface may be formed from a group V selected from crystals constituting the sensor layer on the sensor layer side, and may be formed from a group III selected from the compound semiconductor on the first and second compound semiconductor layers. . An intermediate layer may be inserted between the group III-group V bond.

Further, electrons participating in electric conduction are present in the sensor layer, and the electron concentration is 5 × 10 ¹⁶ to 8 × 1.
0 ¹⁸ / cm ³ is preferable, and 8 × 10 ^{16 to} 3 × 10 ¹⁸
/ Cm ³ is a more preferred range. If necessary, the sensor layer may be doped with a donor impurity. Further, the first and second compound semiconductor layers serving as barrier layers for the sensor layer may be doped. Furthermore, it is common practice to introduce a spacer layer between the sensor layer and the doped barrier layer.

The electrode formed on the sensor layer of the present invention is preferably formed in direct ohmic contact with the sensor layer. However, when the second compound semiconductor layer is present, the second compound semiconductor layer is preferably used. After the electrode is formed on the semiconductor layer, ohmic contact with the sensor layer is performed by annealing or the like via the second compound semiconductor layer.

Further, the magnetic sensor of the present invention is a magnetic sensor utilizing a Hall effect or a magnetoresistance effect of a Hall element, a magnetoresistance element or the like.

Further, the step of forming a high-resistance first compound semiconductor layer and the step of forming a sensor layer on the first compound semiconductor layer have the same lattice constant as the crystal constituting the sensor layer. Or, or having a value close to, characterized by having a band gap energy larger than the crystal, further processing the sensor layer,
A method for manufacturing a magnetic sensor, comprising a step of forming a plurality of ohmic electrodes on an upper surface of the sensor layer.
Furthermore, a step of forming the second compound semiconductor layer on the upper surface of the sensor layer as necessary is included. In addition, a step of doping the sensor layer and the first or second compound semiconductor layer as necessary is also included. A step of forming an electrode on the upper surface of the second compound semiconductor layer and making ohmic contact with the sensor layer by annealing or the like is also within the scope of the present invention.

The magnetic sensor of the present invention is often bonded and packaged as required. The magnetic sensor of the present invention is often packaged together with a SiIC chip.

[0016]

Next, the present invention will be described in more detail.

FIG. 1 shows a high-sensitivity Hall element which is one of the high-sensitivity magnetic sensors on which the present invention is based. FIG. 1- (a)
Shows a cross section schematically. FIG. 1- (b) is a diagram viewed from above. In FIG. 1, 1 is a substrate, 2 is a high-resistance first compound semiconductor layer having a lattice constant equal to or close to that of a crystal constituting a sensor layer, and having a band gap energy larger than that of the crystal. And 3 indicates a sensor layer. 4 (41, 42, 43, 44)
Indicates an ohmic electrode. Also, 5 (51, 5
Reference numerals 2, 53 and 54) denote electrodes for bonding. Here, only the magnetic sensor chip is shown for simplicity. FIG.
Shows another embodiment of the present invention, and 6 is a high-resistance second compound semiconductor layer. Reference numeral 7 denotes a donor impurity doped in the sensor layer. Reference numeral 8 denotes a passivation layer made of an insulator formed as needed to protect the surface of the semiconductor.

In the present invention, the donor impurity doped in the sensor layer is indicated by 7, but the position of this impurity may be uniform throughout or may be only a predetermined position.
For example, only the central portion may be doped, or a portion may be doped and other portions may not be doped. Furthermore, the central part may be large and the peripheral part may be small. In addition, it is often the case that the central portion is small and the peripheral portion is heavily doped with impurities. These may be performed separately for each layer.
In the present invention, the impurity doped in the sensor layer may be any substance that generally acts as a donor for the crystal constituting the sensor layer, and S, Si, Ge, Se, and the like are preferable.

In _x Ga constituting the sensor layer of the present invention
_{1-x As y Sb 1-} y is a composition ratio of In and Ga in the layer 0 <x ≦
_1. 0, preferably _0. 6 ≦ x ≦ _1. 0. Furthermore in order to utilize the high electron mobility of the InAs _0. 8 ≦ x ≦
_1.0 is more preferable. _{Further, In x Ga 1-x As} y Sb
While the composition ratio of As and Sb in _1-y layer is 0 ≦ y ≦ _1. 0,
Preferably _{0. 4 ≦ y ≦ 1.} 0, more preferably _0. 6 ≦ y ≦
_1. In the range of 0. The thickness of the sensor layer is 1.4 μm or less, preferably 0.5 μm or less, more preferably
0.3 μm or less. Often less than 0.2 μm is often used to fabricate semiconductor sensors with higher sensitivity. Also,
0.1 μm or less is preferably used for manufacturing a semiconductor sensor having a larger input resistance value. Further, the sensor layer is further thinned, electrons are confined in the sensor layer by the first and, if necessary, the second compound semiconductor layers, a quantum well is formed, and heat resistance, breakdown voltage, and the like are improved by a quantum effect. Will be In this case, the thickness of the sensor layer is 500 mm.
Or less, preferably 300 ° or less, more preferably 200 ° or less. In particular, when a thin sensor layer is used, in the present invention, doping of a donor impurity is performed near the boundary surface of the sensor layer of the first or second compound semiconductor layer, and electrons supplied from the impurity are doped. It is often carried out to reduce scattering due to impurities in the sensor layer by supplying to the sensor layer beyond the boundary surface, and to obtain higher electron mobility for higher sensitivity. In this case, the electric conduction in the sensor layer is carried out by the electrons supplied from the first or second compound semiconductor layer to the sensor layer, and furthermore, the electrons present in the sensor layer and the doping in the sensor layer. Mixed conduction with electrons supplied from a donor impurity atom. FIG. 3 shows such an embodiment of the present invention. Reference numeral 9 denotes a donor impurity doped into the high-resistance compound semiconductor layer for such a purpose. FIG. 3A illustrates an example in which the first compound semiconductor layer is doped with a donor impurity. FIG. 3B shows an example in which the second compound semiconductor layer is doped. The electrons supplied from the donor impurities 9 into the sensor layer may form a two-dimensionally spread electron gas, but participate in electrical conduction together with the electrons supplied from the donor impurities 7 in the sensor layer. The impurity 9 to be doped for this purpose may be anything as long as it acts as a donor impurity, but Si, S, Ge, Se and the like are preferable.

The high resistance first and second compound semiconductor layers used in the semiconductor sensor of the present invention preferably have insulating or semi-insulating properties, but may have a high resistance according to these. For example, the resistance of the first and second compound semiconductor layers is at least 5 to 10 times higher than the resistance of the sensor layer, preferably 100 times or more, more preferably 100 times or more.
It is at least 0 times higher.

The first compound semiconductor layer on which the sensor layer used in the semiconductor sensor of the present invention is formed, and the second compound semiconductor layer formed on the upper surface of the sensor layer generally include a sensor layer. May be a compound semiconductor having the same lattice constant as or a value close to that of the crystal constituting, and having a value larger than that of the crystal. For example, GaSb, AlSb, Al _a1 G
a _1-a1 Sb, GaAs _c1 Sb _1-c1 , AlAs _c1 S
b _1-c1 , Al _a1 Ga _1-a1 As _c1 Sb _1-c1 , Al _b1 In
_1-b1 As _c2 Sb _1-c2 , Al _b2 In _1-b2 P _d1 Sb _1-d1 or A
For example, l _a2 Ga _1-a2 P _d2 Sb _1-d2 can have a composition in which the lattice constant is the same as or close to that of the crystal constituting the sensor layer, and the band gap energy is also lower than that of the crystal. It has a large value and is a preferred material. In the compound semiconductor layer, Al _a1 Ga _1-a1 As _c1 Sb _{1-c1
In, {0 ≦ a 1 ≦ 1} . 0, 0 ≦ c 1 ≦ 0. 6} is preferably, _{{0.
5 ≦ a 1 ≦ 1. 0,0} ≦ c 1 ≦ 0. 4} are more preferred range. In _{Al b1 In 1-b1 As c2} Sb 1-c2, {0. 2 ≦ b 1 ≦
_{1. 0, 0 ≦ c 2} ≦ 1. 0} is _{preferable, {0. 5 ≦ b 1} ≦ 1. 0, 0 ≦
c ₂ ≦ _0. 8} are more preferred range. Al _b2 In _1-b2
P _d1 Sb _1-d1 is a _{{0 ≦ b 2 ≦ 1.} 0,0 ≦ d 1 ≦ 1. 0}, {0. 1 ≦ b 2 ≦ 1. 0, 0. 1 ≦ d 1 ≦ _0.8} is the preferred range. For Al _a2 Ga _1-a2 P _d2 Sb _1-d2 , ｛0 ≦ a ₂ ≦
_{1. 0, 0 ≦ d 2} ≦ 0. 5} are _{preferable, {0. 5 ≦ a 2} ≦ 1. 0, 0 ≦
d ₂ ≦ _0. 35} are more preferred range. Here, the fact that the lattice constant of the first and second compound semiconductor layers has a value close to the lattice constant of the crystal constituting the sensor layer means that, in practice,
The difference between the lattice constant of the compound semiconductor and the lattice constant of the crystal constituting the sensor layer is within ± 5%, more preferably ± 2%.
It means within%.

The thickness l ₁ of the first compound semiconductor layer is 0.1 μm _.
m ≦ l is ₁ ≦ 10 [mu] m, preferably, _0. 5 μm ≦ l ₁
≦ 5 μm. In order to obtain the quantum effect of the sensor layer, the thickness is preferably 1 μm or more. The thickness l ₂ of the second compound semiconductor layer is usually in accordance with the first compound semiconductor layer, but is preferably 1 μm or less, more preferably 0.5 μm.
Below, 0.1 μm or less is also preferably used. Further, the first and second compound semiconductor layers may form a multilayer composed of several kinds selected from these compound semiconductors. For example, a third compound semiconductor layer may be formed on the second compound semiconductor layer. The third compound semiconductor layer is a semiconductor insulating layer pursuant to the second compound semiconductor layer, the thickness thereof is also the same as l _2. The second and third compound semiconductor layers prevent air oxidation of the sensor layer and have a protection effect against damage due to passivation or the like.

The bonding species at the interface formed by the sensor layer and the first and second compound semiconductor layers of the present invention include In-S
b, Ga-Sb, Ga-As, In-As, Al-A
s, Al-Sb, In-P and Ga-P. Among them, In-Sb is preferably used. Further, an intermediate layer may be introduced between the group III layer and the group V layer. FIG. 4 is an enlarged view of such an interfacial bonding species.
In order to form the interfacial bonding species, in the case of the interface between the first compound semiconductor layer and the sensor layer, first, when the growth of the first compound semiconductor layer is completed, the group V (group III) selected from the compound semiconductor layers is used.
Irradiation, and then the irradiation of the group V (group III) is stopped, and at the same time, the group III (V) selected from the crystals constituting the sensor layer is irradiated.
(Tribe) only. Next, irradiation of the remaining group III and group V of the sensor layer crystal is started, and the sensor layer is grown. In the case of the interface between the sensor layer and the second compound semiconductor layer, when the growth of the sensor layer is completed, only the group III (group V) selected from the crystal of the sensor layer is irradiated. Next, the irradiation of the group III (group V) is stopped, and simultaneously the group V (group III) selected from the second compound semiconductors is irradiated. Then, irradiation with the remaining elements of the second compound semiconductor is started, and the second compound semiconductor layer is grown. The interface layer formed by the irradiation of the group III and group V is preferably grown by only a few atomic layers, and more preferably grown by only one atomic layer.

The electrode constituting the semiconductor sensor of the present invention is usually an ohmic electrode. In this case, it is preferable to make an ohmic contact directly with the sensor layer.
A structure in which an electrode is formed on the second compound semiconductor layer and is in ohmic contact with the sensor layer via the second compound semiconductor layer may be used. This structure is formed by the following method. That is, in order to obtain ohmic contact between the electrode and the sensor layer, alloying annealing is performed, and the electrode material is diffused from the second compound semiconductor layer to the sensor layer, or donor impurities are ion-implanted only in the region below the electrode. , There is a method of lowering the contact resistance. The electrode metal is
A known laminated electrode structure including a three-layer structure of AuGe / Ni / Au may be used, but a single-layer metal such as Al, Ti, Au, and W may be used, and many combinations are possible.

The substrate used to form the magnetic sensor of the present invention may be any substrate as long as it can grow a single crystal, and a GaAs single crystal semi-insulating substrate, a Si single crystal substrate, etc. are preferred examples. is there. Further, as a surface on which a crystal is grown, a (100) plane, a (110) plane, or the like is often used. Further, a surface cut at an angle of several degrees from these crystal planes is often used to improve crystal growth. For example, 2 from (100) plane
The surface turned off is a preferred example. In the process of manufacturing a magnetic sensor using an insulating substrate such as mica, a thin film layer grown on mica is also transferred. That is, in the manufactured magnetic sensor, the substrate may not be used substantially.

In the method of manufacturing a magnetic sensor according to the present invention, the step of forming the first compound semiconductor layer, the step of forming the sensor layer, and the step of forming the second compound semiconductor are:
In general, any method that can grow a single crystal of a thin film is preferable, but a molecular beam epitaxy method, MOVPE method, AL
Method E and the like are particularly preferred methods.

Further, in the step of processing the sensor layer into a required shape as required, wet etching, dry etching, ion milling or the like is used. These methods are also preferably used for the purpose of processing the first and second compound semiconductor layers into required shapes as required.

FIG. 5 shows a magnetoresistive element which is a basic example of the high-sensitivity magnetic sensor of the present invention. FIG. 5A is a sectional view of a two-terminal magnetoresistive element. FIG. 5- (b) is a diagram viewed from above. FIG. 5C is a diagram of the three-terminal differential type magnetoresistive element viewed from above. Reference numeral 10 denotes a short bar electrode. This short bar electrode has the effect of increasing the magnetoresistance effect, and is preferably used for increasing the magnetic sensitivity. The short bar electrode 10 in FIG.
Is in ohmic contact with, usually metal.

The magnetic sensor of the present invention is preferably packaged together with a SiIC chip for amplifying the output of the sensor and used as a magnetic sensor such as a Hall IC or a magnetoresistive IC. FIG. 6 shows such an example. 11 is a magnetic sensor chip, 12 is a SiIC chip, 13 is an island on a lead, 14 is a lead,
5 indicates a wire, and 16 indicates a mold resin.

Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to only these examples.

(Example 1-a) GaAs having a diameter of 2 inches
Non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was grown as a first compound semiconductor layer by 0.30 μm on the surface of the substrate by MBE (Molecular Beam Epitaxy). Next, Si-doped InAs was added as a sensor layer to a thickness of 0.1 mm.
The growth was 25 μm. The electron mobility value of this InAs thin film is 19000 cm ² / Vs, and the sheet resistance value is 150Ω.
/ □, and the electron concentration was 0.88 × 10 ¹⁷ cm ⁻³ .

Next, using photolithography,
On the laminated thin film formed on the GaAs substrate, a resist pattern for forming a portion to be a magnetically sensitive portion was formed. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed. Next, 0.2 μm of S was deposited on the entire surface of the wafer by plasma CVD.
An iN film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Next, the reactive ion etching was used to etch the SiN where the electrodes were to be formed, exposing the sensor layer. In addition, AuG
e (Au: Ge = 88: 12) layer is 2000Å, Ni layer is 500Å,
An Au layer was continuously deposited at 3500 ° and an electrode pattern of a Hall element was obtained by a usual lift-off method. Thus, 2
A number of Hall elements were fabricated on an inch wafer.
Next, each Hall element was cut by a dicing saw. The chip size of this manufactured Hall element is 0.36
mm × 0.36 mm. This Hall element chip was die-bonded and wire-bonded, and then transfer-molded to produce a Hall element molded with epoxy resin. The film properties are shown in Table 1 below.
Table 2 shows the characteristics of the device.

As shown in Table 2, the Hall element of Example 1-a has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 7 shows the temperature characteristics of the Hall output voltage. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. As shown in FIG. 8, the temperature change of the element resistance value is extremely small up to 150 ° C., and the decrease of the resistance value is also very small. Furthermore, the coefficient of heat dissipation when molded with a standard mini-mold mold is 2.3 mW /
It was found that it can be used even at a high temperature of 100 to 150 ° C., which was not possible conventionally. In addition, it was found that there was no problem with use on the low temperature side even at -50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 1-b Non-doped Al was used as the first compound semiconductor layer in the same manner as in Example 1-a.
_0.8 Ga _0.2 As _0.16 Sb _0.84 was grown to 0.30 μm. Next, non-doped InAs was grown to 0.25 μm. The value of electron mobility of this InAs thin film is 12000 c
m ² / Vs, sheet resistance value was 520 Ω / □, and electron concentration was 4.00 × 10 ¹⁶ cm ⁻³ .

A Hall element was fabricated in the same manner as in Example 1-a, and the characteristics were measured under the same conditions. The resistance was slightly lower than that of -a.

Example 2 A non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
It was grown to 0 μm. Next, Si-doped In is used as a sensor layer.
As was grown to 0.15 μm. The electron mobility value of this InAs thin film was 19000 cm ² / Vs, the sheet resistance value was 230 Ω / □, and the electron concentration was 0.95 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 1-a.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 2 has a large Hall output voltage of 260 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature dependency of the Hall output voltage showed the same characteristics as in Example 1-a. Further, the temperature dependence of the element resistance value was 15% as in Example 1-a.
It was extremely small up to 0 ° C. Thus, the temperature change of the element resistance value is extremely small, and the decrease of the resistance value is also very small. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good.
Further, use at a low temperature side has no problem even at −50 ° C., and it has been found that reliability is obtained over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 3 A non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 as the first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
It was grown to 0 μm. Next, Si-doped In is used as a sensor layer.
As was grown 0.10 μm. The electron mobility value of this InAs thin film was 19000 cm ² / Vs, the sheet resistance value was 300 Ω / □, and the electron concentration was 1.1 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 1-a.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2
It was shown to.

As shown in Table 2, the Hall element of Example 3 has a large Hall output voltage of 270 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature dependency of the Hall output voltage showed the same characteristics as in Example 1-a. Further, the temperature dependency of the element resistance value was also 150 ° C. as in the first embodiment.
Until very small. Thus, the temperature change of the element resistance value is extremely small, and the decrease of the resistance value is also very small.
For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good. Further, use at a low temperature side has no problem even at −50 ° C., and it has been found that reliability is obtained over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Comparative Example 1 Non-doped Al _0.8 Ga _0.2 As _0.5 Sb _0.5 was grown to 0.30 μm in the same manner as in Example 3. Next, non-doped InAs was grown to 0.10 μm. The surface morphology of this InAs thin film was poor, and the sheet resistance was too high to measure the electron mobility. It has been clarified that if the AlGaAsSb layer deviates from the lattice constant of InAs, an InAs thin film having good crystallinity cannot be obtained. It was impossible to make a Hall element.

EXAMPLE 4 _0.3 μm of non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
m. Next, Si-doped InAs is used as a sensor layer.
Was grown 0.10 μm. Next, a non-doped Al _0.8 Ga _0.2 As _0.16 Sb _{0.84 is used} as the second compound semiconductor layer.
Is grown to 500 ° and GaAs is further formed as a cap layer.
_0.16 Sb _0.84 was grown at 100 _° . The electron mobility of the InAs thin film was 21000 cm ² / Vs, the sheet resistance was 280 Ω / □, and the electron concentration was 1.1 × 10 ¹⁷ cm ⁻³ .

Next, using photolithography,
On the laminated thin film formed on the GaAs substrate, a resist pattern for forming a portion to be a magnetically sensitive portion was formed. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed. Next, 0.2 μm of S was deposited on the entire surface of the wafer by plasma CVD.
An iN film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Next, the reactive ion etching is used to etch the portion of the SiN where the electrodes are formed, and then the unnecessary portion of the second compound semiconductor layer and the cap layer are removed with an HCl-based etchant to expose the sensor layer. I let it. Further, AuGe (Au: Ge = 8
8:12) 2000Å layer, 500Å Ni layer, 3 Au layer
The electrode pattern of the Hall element was formed by a continuous lift-off method at 500 ° continuous vapor deposition. Thus, a large number of Hall elements were manufactured on a 2-inch wafer. next,
Each Hall element was cut by a dicing saw. The chip size of this manufactured Hall element is 0.36mm ×
0.36 mm.

This Hall element chip is die-bonded,
Wire bonding was performed, and then transfer molding was performed to manufacture a Hall element molded with epoxy resin.

Table 1 shows the film characteristics, and Table 2 shows the characteristics of the device.
It was shown to.

As shown in Table 2, the Hall element of Example 4 has a large Hall output voltage of 309 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is three times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 1-a, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was also the same as in Example 1-a, the temperature change was extremely small, and the decrease in the resistance was very small. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C.
It has been found that it can be used even at a high temperature such as ℃ which is not possible conventionally. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. There is no problem with using at low temperature even at -50 ° C.
It was found to be reliable over a wide temperature range.

Example 5 A first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by the MBE method.
l _0.80 Ga _0.2 As _0.32 Sb _0.68 was grown to 0.30 μm. Next, as a sensor layer, Si-doped In _0.8 Ga _0.2
As was grown 0.10 μm. This In _0.8 Ga _0.2
The electron mobility value of the As thin film is 15500 cm ² / Vs,
Sheet resistance value is 330Ω / □, electron concentration 1.22 × 10
¹⁷ cm ^-3 .

Thereafter, a Hall element was manufactured in the same manner as in Example 1-a.

Table 1 shows the film characteristics, and Table 2 shows the characteristics of the device.
It was shown to.

As shown in Table 2, the Hall element of Example 5 has a large Hall output voltage of 200 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 9 shows the temperature characteristics of the Hall output voltage. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. Further, as shown in FIG. 10, the temperature change of the element resistance value is extremely small up to 150 ° C., and the resistance value does not decrease. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at high temperatures is good. It has become clear that it can be used even at high temperatures that were not possible before. Further, use at a low temperature side has no problem even at −60 ° C., and it has been found that it is reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, and can be used up to high temperatures,
The reliability is extremely high. This device also consumes less power, and requires only half the power consumption to obtain the same sensitivity, especially as compared to a GaAs Hall device.

(Comparative Example 2) As in Example 5, non-doped Al _0.8 Ga _0.2 As _0.6 Sb _0.4 was 0.30 μm
Grew. Next, Si-doped In _0.8 Ga _0.2 As was grown to 0.10 μm, and this In _0.8 Ga _0.2 As was grown.
The surface morphology of the thin film was poor, and it was impossible to measure the electron mobility. It was impossible to make a Hall element.

Example 6 A non-doped Al _0.8 Ga _0.2 As _0.23 Sb _0.77 as a first compound semiconductor layer was formed on a surface of a GaAs substrate having a diameter of 2 inches by MBE to a thickness of _0.3 μm.
m. Next, as a sensor layer, Si-doped In _0.8
Ga _0.2 As was grown to 0.10 μm. Next, as the second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As
_0.23 Sb _0.77 was grown at 500 _°, and GaAs _0.23 Sb _0.77 was grown at 100 _° as a cap layer. The value of electron mobility of this In _0.8 Ga _0.2 As thin film is 1900.
0 cm ² / Vs, the sheet resistance was 310 Ω / □, and the electron concentration was 1.06 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2
It was shown to.

As shown in Table 2, the Hall element of Example 6 has a large Hall output voltage of 240 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

Example 7 A non-doped Al _0.8 Ga _0.2 As _0.45 Sb _0.55 0.3 μm was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
m. Next, as a sensor layer, Si-doped In _0.65
Ga _0.36 As was grown to 0.10 μm. Next, as the second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As
_0.45 Sb _0.55 was grown at 500 °, and GaAs _0.45 Sb _0.55 was grown at 100 _° as a cap layer. The value of electron mobility of the In _0.65 Ga _0.35 As thin film is 1300.
The sheet resistance was 0 cm ² / Vs, the sheet resistance was 380 Ω / □, and the electron concentration was 1.26 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 1 shows the film characteristics, and Table 2 shows the device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 7 has a large Hall output voltage of 195 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

(Embodiment 8) Non-doped Al _0.8 Ga _0.2 As _0.75 Sb ₀ , ₂₅ was applied as a first compound semiconductor layer by 0.3 μm to the surface of a GaAs substrate having a diameter of 2 inches by MBE.
m. Next, as a sensor layer, Si-doped In _0.3
Ga _0.7 As was grown 0.10 μm. Next, as the second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As
_0.75 Sb _0.25 was grown at 500 °, and GaAs _0.75 Sb _0.25 was grown as a cap layer at 100 °. The electron mobility value of this In _0.3 Ga _0.7 As thin film is 9000
cm ² / Vs, sheet resistance value was 420 Ω / □, and electron concentration was 1.65 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 8 has a Hall output voltage of 140 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is about 1.5 times the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

Example 9 A non-doped Al _0.8 In _0.2 As _0.3 Sb _0.7 as a first compound semiconductor layer was formed on a surface of a GaAs substrate having a diameter of 2 inches by MBE to a thickness of _0.3 μm.
m. Next, as a sensor layer, Si-doped In _0.8
Ga _0.2 As _0.3 Sb _0.7 was grown to 0.10 μm.
Next, as the second compound semiconductor layer, non-doped Al _0.8
In _0.2 As _0.3 Sb _0.7 was grown at 500 °. The In _0.8 Ga _0.2 As _0.3 Sb _0.7 thin film has an electron mobility of 20000 cm ² / Vs and a sheet resistance of 270 Ω.
/ □, and the electron concentration was 1.15 × 10 ¹⁷ cm ⁻³ .

Next, using photolithography,
On the laminated thin film formed on the GaAs substrate, a resist pattern for forming a portion to be a magnetically sensitive portion was formed. Subsequently, unnecessary portions were etched with an H ₃ PO ₄ type etching solution, and then the resist was removed. Next, 0.2 μm of S was deposited on the entire surface of the wafer by plasma CVD.
An iN film was formed. A resist pattern having openings serving as electrodes was formed on the layer by photolithography. Next, the reactive ion etching was used to etch the portion of the SiN where the electrodes were to be formed, and then the unnecessary portion of the second compound semiconductor layer was removed with an HCl-based etchant to expose the sensor layer. Further, two layers of AuGe (Au: Ge = 88: 12) were formed by vacuum evaporation.
An electrode pattern of a Hall element was formed by a normal lift-off method by continuously depositing a 2,000-.ANG., 500-.ANG. Ni layer and a 3,500.ANG. Au layer. Thus, a large number of Hall elements were manufactured on a 2-inch wafer. Next, each Hall element was cut by a dicing saw. The chip size of this manufactured Hall element is 0.36 mm x 0.36 mm
Met.

This Hall element chip is die-bonded,
Wire bonding was performed, and then transfer molding was performed to manufacture a Hall element molded with epoxy resin.

The film characteristics are shown in Table 1 below, and the device characteristics are shown in Table 2 below.
It was shown to.

As shown in Table 2, the Hall element of the ninth embodiment has a Hall output voltage of 300 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element using a standard mini-mold type is about 2.3 mW / ° C., and it is clear that this element can be used even at a high temperature of 100 to 150 ° C., which is not possible conventionally. It became. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

Comparative Example 3 In the same manner as in Example 9, non-doped Al _0.8 In _0.2 As _0.7 Sb _0.3 was grown to _0.3 μm. Next, Si-doped In _0.8 Ga _0.2 As _0.3 Sb
_0.7 was grown to 0.10 μm. Next, the non-doped A
l _0.8 In _0.2 As _0.7 Sb _0.3 was grown at 500 °. The surface morphology of the In _0.8 Ga _0.2 As _0.3 Sb _0.7 thin film was poor, the sheet resistance was very high, and the electron mobility could not be measured. It was impossible to make a Hall element.

Example 10 A non-doped Al _0.8 In _0.2 As _0.05 Sb _0.95 as a first compound semiconductor layer was formed on a surface of a GaAs substrate having a diameter of 2 inches by the MBE method.
μm was grown. Next, Si-doped In is used as a sensor layer.
_0.8 Ga _0.2 As _0.5 Sb _0.5 was grown to 0.10 μm. Next, as a second compound semiconductor layer, non-doped Al
_0.8 In _0.2 As _0.05 Sb _0.95 was grown at 500 °.
The In _0.8 Ga _0.2 As _0.5 Sb _0.5 thin film has an electron mobility of 21000 cm ² / Vs and a sheet resistance of 27.
It was 0Ω / □ and the electron concentration was 1.10 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 10 has a Hall output voltage of 310 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage.
This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

(Example 11) A non-doped Al _0.4 In _0.6 As _0.05 Sb _0.95 as a first compound semiconductor layer was formed on a surface of a GaAs substrate having a diameter of 2 inches by the MBE method.
μm was grown. Next, Si-doped In is used as a sensor layer.
_0.8 Ga _0.2 As _0.2 Sb _0.8 was grown to 0.10 μm. Next, as a second compound semiconductor layer, non-doped Al
_0.4 In _0.6 As _0.05 Sb _0.95 was grown at 500 °.
The In _0.8 Ga _0.2 As _0.2 Sb _0.8 thin film has an electron mobility of 21000 cm ² / Vs and a sheet resistance of 25.
It was 0 Ω / □ and the electron concentration was 1.19 × 10 ¹⁷ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 1 shows film characteristics, and Table 2 shows device characteristics.
It was shown to.

As shown in Table 2, the Hall element of Example 11 has a Hall output voltage of 305 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage.
This value is about three times larger than the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 5, and showed good temperature characteristics at 100 ° C. or higher. The temperature dependence of the element resistance was the same as in Example 5, the temperature change was extremely small, and no decrease in the resistance was observed. The coefficient of heat dissipation of a resin molded element with a standard mini-mold type is 2.3 mW / ° C.
It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability. The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range.

Example 12 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, as a sensor layer, non-doped InAs
Grow 0 °. Next, non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was deposited as the second compound semiconductor layer at 500 ° C.
Grown, and GaAs _0.16 Sb as a cap layer
_0.84 was grown 100 _° . This InAs thin film has an electron mobility of 15000 cm ² / Vs and a sheet resistance of 2
It was 00Ω / □ and the electron concentration was 1.39 × 10 ¹⁸ cm ^-3 . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 12 has a large Hall output voltage of 220 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. FIG. 11 shows the temperature characteristics of the Hall output voltage. The temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or higher, indicating excellent temperature characteristics. As shown in FIG. 12, the temperature change of the element resistance value did not drop to about 150 ° C. at all, indicating that the device had excellent temperature characteristics. For this reason, when the element is used at a constant voltage, no overcurrent flows and no failure occurs, and the reliability at a high temperature is good. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C.
It has been clarified that it can be used even at a conventionally impossible high temperature of 00 to 150 ° C. Further, it was found that the use on the low temperature side did not cause any problem even at -50 ° C, and it was found to be reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Comparative Example 4) As in Example 12, the diameter 2
Non-doped Al _0.8 G on the surface of an inch GaAs substrate
a _0.2 As _0.5 Sb _0.5 was grown to 1.0 μm. Next, non-doped InAs was grown at 150 °. Next, non-doped Al _0.8 Ga _0.2 As _0.5 Sb _0.5
GaAs _0.5 Sb as a cap layer
_0.5 was grown at 100 °. The surface morphology of the grown thin film was slightly cloudy, and the electron mobility value of this InAs thin film was 2300 cm ² / Vs and the sheet resistance value was 103.
0 Ω / □ and the electron concentration were 1.75 × 10 ¹⁸ cm ⁻³ . A Hall element was fabricated in the same manner as in Example 4, but the Hall output voltage was as small as 35 mV and the input resistance was as high as 2 kΩ. As for the temperature characteristics, the hall output voltage and input resistance both have large temperature changes,
The drop in input resistance in the high temperature area was also large.

Example 13 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, as a sensor layer, non-doped InAs
Grow 0 °. Next, non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was deposited as the second compound semiconductor layer at 500 ° C.
Grown, and GaAs _0.16 Sb as a cap layer
_0.84 was grown 100 _° . This InAs thin film has an electron mobility of 15000 cm ² / Vs and a sheet resistance of 2
It was 15 Ω / □ and the electron concentration was 0.97 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film properties, and Table 4 shows element properties.
It was shown to.

As shown in Table 4, the Hall element of Example 13 has a large Hall output voltage of 225 mV at a rated input voltage in a magnetic field having a magnetic flux density of 500 G. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the twelfth embodiment, and the temperature change of the element resistance does not drop at all to about 150 ° C. as in the twelfth embodiment, and is excellent in temperature dependency. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 150 ° C, which is impossible conventionally. It became clear what we could do.
In addition, it was found that there was no problem with use on the low temperature side even at -50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 14 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, non-doped InAs was used as a sensor layer for 30 minutes.
Grow 0 °. Next, non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was deposited as the second compound semiconductor layer at 500 ° C.
Grown, and GaAs _0.16 Sb as a cap layer
_0.84 was grown 100 _° . This InAs thin film has an electron mobility of 15000 cm ² / Vs and a sheet resistance of 2
The resistance was 50 Ω / □ and the electron concentration was 0.56 × 10 ¹⁸ cm ⁻³ .

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 14 has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage showed the same characteristics as those of Example 12. Further, even if the temperature change of the element resistance value exceeds 150 ° C. as in Example 12, the resistance value does not decrease and the heat resistance is extremely good. It has been found that this device can be used even at a high temperature of 100 to 150 ° C., which is impossible conventionally.
In addition, it was found that there was no problem with use on the low temperature side even at -50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Embodiment 15) Hole utilizing quantum effect
In order to obtain a device, the surface of a GaAs substrate with a diameter of 2 inches
Non-doped as first compound semiconductor layer by MBE method
Al_0.8 Ga_0.2As_0.16Sb_0.84Grown to 1.0 μm
I let it. Next, 10% non-doped InAs was used as the sensor layer.
Grow 0 °. Next, as the second compound semiconductor layer,
Doped Al _0.8 Ga_0.2 As_0.16Sb_0.84500Å
Grown and then GaAs as a cap layer_0.16Sb
_0.84Was grown 100 °. Electron transfer of this InAs thin film
Mobility value is 14000cm^Two / Vs, sheet resistance is 2
20Ω / □, electron density 2.03 × 10¹⁸cm^-3So
Was. This thin film was confirmed to form a quantum well.
Was.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 15 has a large Hall output voltage of 170 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage was the same as that in Example 12, and excellent temperature characteristics were exhibited even at 100 ° C. or more. Further, even if the temperature change of the element resistance value exceeds 150 ° C. as in Example 12, the resistance value does not decrease and the heat resistance is extremely good. This element is 1
It has been clarified that it can be used even at a conventionally impossible high temperature of 00 to 150 ° C. In addition, it was found that there was no problem with use on the low temperature side even at -50 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 16 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.23 Sb _0.77 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, non-doped In _0.9 Ga is used as a sensor layer.
_0.1 As was grown at 150 °. Next, as the second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As _0.23 Sb
_0.77 is grown at 500 _° and Ga
As _0.23 Sb _0.77 was grown at 100 _° . This In _0.9
The electron mobility value of the Ga _0.1 As thin film is 14000 cm ²
/ Vs, sheet resistance 300Ω / □, electron concentration 0.9
It was 9 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 16 has a large Hall output voltage of 215 mV at a rated input voltage in a magnetic field having a magnetic flux density of 500 G. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage showed the same characteristics as those of Example 12. Further, the temperature dependence of the element resistance value was extremely small up to about 150 ° C. as in Example 12, and the resistance value did not decrease, indicating that the device had excellent temperature characteristics. As described above, since the temperature change of the element resistance value is extremely small, an element manufactured by resin molding using a standard mini-mold type has a heat dissipation coefficient of about 2.3 mW / ° C., which was conventionally impossible. It has been found that it can be used even at high temperatures. Further, it was found that the use on the low temperature side did not cause any problem even at -50 ° C, and it was found to be reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

Example 17 In order to obtain a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.32 Sb _0.68 was formed as a first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, non-doped In _0.8 Ga is used as a sensor layer.
_0.2 As was grown at 150 °. Next, a non-doped Al _0.8 Ga _0.2 As _0.32 Sb is used as the second compound semiconductor layer.
_0.68 is grown at 500 _° and Ga is further used as a cap layer.
As _0.32 Sb _0.68 was grown by 100 _° . This In _0.8
The electron mobility value of the Ga _0.2 As thin film is 13000 cm ²
/ Vs, sheet resistance value is 320Ω / □, electron density is 1.0
It was 0 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 17 has a large Hall output voltage of 205 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. FIG. 13 shows the temperature characteristics of the Hall output voltage. The temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or higher, indicating excellent temperature characteristics. As shown in FIG. 14, the temperature change of the element resistance did not decrease at all to about 180 ° C., indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. Further, it was found that the use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Comparative Example 5) As in Example 17, the diameter 2
Non-doped Al _0.8 G on the surface of an inch GaAs substrate
a _0.2 As _0.6 Sb _0.4 was grown to 1.0 μm. Next, non-doped In _0.8 Ga _0.2 As was grown at 150 °. Next, non-doped Al _0.8 Ga _0.2 As _0.6 Sb
_0.4 is grown at 500 ° and Ga is further used as a cap layer.
As _0.6 Sb _0.4 was grown at 100 °. The surface morphology of the grown thin film is slightly cloudy, and this In _0.8 G
The electron mobility value of the a _0.2 As thin film is 2000 cm ² / V
s, sheet resistance value is 1100Ω / □, electron concentration is 1.
It was 89 × 10 ¹⁸ cm ⁻³ . A Hall element was manufactured in the same manner as in Example 4, but the Hall output voltage was
The input resistance was as small as 30 mV and the input resistance was as high as 2.2 kΩ. As for the temperature characteristics, the Hall output voltage and the input resistance both changed greatly in temperature, and the input resistance value in the high-temperature portion was greatly reduced.

Example 18 For the purpose of obtaining a Hall element utilizing the quantum effect, a non-doped Al _0.8 Ga _0.2 As _0.45 Sb _0.55 was formed as the first compound semiconductor layer on the surface of a GaAs substrate having a diameter of 2 inches by MBE. 0.0 μm. Next, as a sensor layer, non-doped In _0.65 Ga
_0.35 As was grown at 150 °. Next, as a second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As _0.45 Sb
_0.55 is grown at 500 °, and Ga is further used as a cap layer.
As _0.45 Sb _0.55 was grown at 100 °. This In _0.65
The electron mobility value of the Ga _0.35 As thin film is 14000 cm ²
/ Vs, sheet resistance is 360Ω / □, electron concentration 0.8
It was 3 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 18 has a large Hall output voltage of 205 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. In addition, the temperature change of the element resistance did not drop to about 180 ° C. at all, indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C.
It has been clarified that it can be used even at a high temperature of 180 ° C., which is not possible conventionally. In addition, use on the low temperature side,
There was no problem even at -60 ° C, and it was found that it was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Example 19) Non-doped Al _0.8 Ga _0.2 As _0.75 Sb _0.25 was applied as a first compound semiconductor layer to a surface of a GaAs substrate having a diameter of 2 inches by MBE.
μm was grown. Next, as a sensor layer, non-doped In
_0.3 Ga _0.7 As was grown at 150 °. Next, as the second compound semiconductor layer, non-doped Al _0.8 Ga _0.2 As
_0.75 Sb _0.25 was grown at 500 °, and GaAs _0.75 Sb _0.25 was grown as a cap layer at 100 °. The electron mobility value of this In _0.3 Ga _0.7 As thin film is 1000
The sheet resistance was 0 cm ² / Vs, the sheet resistance was 400 Ω / □, and the electron concentration was 1.04 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Hereinafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 19 has a large Hall output voltage of 150 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is 1.5 times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage at a constant voltage is small even at 100 ° C. or more, indicating excellent temperature characteristics. In addition, the temperature change of the element resistance did not drop to about 180 ° C. at all, indicating that the element had excellent temperature characteristics. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. Further, it was found that the use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Example 20) Non-doped Al _0.8 In _0.2 As _0.3 Sb _0.7 as a first compound semiconductor layer was formed on the surface of a GaAs substrate having a diameter of 2 inches by MBE.
μm was grown. Next, as a sensor layer, non-doped In
_0.8 Ga _0.2 As _0.8 Sb _0.2 was grown at 150 °.
Next, as the second compound semiconductor layer, non-doped Al _0.8
In _0.2 As _0.3 Sb _0.7 was grown at 500 °. The In _0.8 Ga _0.2 As _0.8 Sb _0.2 thin film has an electron mobility of 15000 cm ² / Vs and a sheet resistance of 300 Ω.
/ □, and the electron concentration was 0.93 × 10 ¹⁸ cm ⁻³ . It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 20 has a large Hall output voltage of 210 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
Further, it was found that there was no problem with use at a low temperature side even at −60 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Comparative Example 6) Similarly to Example 20, non-doped Al _0.8 In _0.2 As _0.7 Sb _0.3
Grew. Next, non-doped In _0.8 Ga _0.2 As _0.8
Sb _0.2 was grown at 150 °. Next, the non-doped A
l _0.8 In _0.2 As _0.7 Sb _0.3 was grown at 500 °. The surface morphology of this grown thin film is poor, the sheet resistance is very high at 1050Ω, and the electron mobility is 2200 c
m ² / Vs. A Hall element was fabricated in the same manner as in Example 9, and the element characteristics were measured. The Hall output voltage was as small as 30 mV, and the input resistance was as high as 2.1 kΩ. As for the temperature characteristics, the Hall output voltage and the input resistance both changed greatly in temperature, and the input resistance value in the high-temperature portion was greatly reduced.

(Example 21) Non-doped Al _0.8 In _0.2 As _0.05 Sb _0.95 was applied as a first compound semiconductor layer to a surface of a GaAs substrate having a diameter of 2 inches by the MBE method.
μm was grown. Next, as a sensor layer, non-doped In
_0.8 Ga _0.2 As _0.5 Sb _0.5 was grown at 150 °.
Next, as the second compound semiconductor layer, non-doped Al _0.8
In _0.2 As _0.05 Sb _0.95 was grown by 500 °.
The In _0.8 Ga _0.2 As _0.5 Sb _0.5 thin film has an electron mobility of 15000 cm ² / Vs and a sheet resistance of 29.
It was 0 Ω / □ and the electron concentration was 0.96 × 10 ¹⁸ cm ⁻³ .
It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 21 has a large Hall output voltage of 215 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
Further, it was found that there was no problem with use at a low temperature side even at −60 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Example 22) Non-doped Al _0.4 In _0.6 As _0.05 Sb _0.95 was applied as a first compound semiconductor layer to a surface of a GaAs substrate having a diameter of 2 inches by MBE method.
μm was grown. Next, as a sensor layer, non-doped In
_0.8 Ga _0.2 As _0.2 Sb _0.8 was grown at 150 °.
Next, as the second compound semiconductor layer, non-doped Al _0.4
In _0.6 As _0.05 Sb _0.95 was grown by 500 °.
The In _0.8 Ga _0.2 As _0.2 Sb _0.8 thin film has an electron mobility of 16000 cm ² / Vs and a sheet resistance of 27.
It was 0 Ω / □ and the electron concentration was 0.96 × 10 ¹⁸ cm ⁻³ .
It was also confirmed that this thin film formed a quantum well.

Thereafter, a Hall element was manufactured in the same manner as in Example 9.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 22 has a large Hall output voltage of 230 mV in a magnetic field having a magnetic flux density of 500 G at a rated input voltage. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature change of the Hall output voltage is small as in the seventeenth embodiment, and the temperature change of the element resistance does not drop to about 180 ° C. as in the seventeenth embodiment, and the temperature dependency is excellent. I understood. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do.
Further, it was found that there was no problem with use at a low temperature side even at −60 ° C., and it was found that the film was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

(Example 23) Non-doped Al _0.8 Ga _0.2 As _0.16 Sb _0.84 was applied as a first compound semiconductor layer to a surface of a GaAs substrate having a diameter of 2 inches by MBE.
μm was grown. Next, only Sb was irradiated to grow only one atomic layer. Next, at the same time as the irradiation of Sb was stopped, only In was irradiated to only one atomic layer. Subsequently, As is irradiated,
Non-doped InAs was grown at 150 ° as a sensor layer. Next, only In was irradiated again with only one atomic layer, and the irradiation of In was stopped, and at the same time, only Sb was irradiated. After forming one atomic layer of Sb, a non-doped A
l _0.8 Ga _0.2 As _0.16 Sb _0.84 is grown at 500 °
Further, GaAs _0.16 Sb _0.84 is added as a cap layer to 100
ÅGrowed. The electron mobility value of this InAs thin film is 2
1000 cm ² / Vs, sheet resistance value is 205 Ω / □,
The electron concentration was 0.97 × 10 ¹⁸ cm ⁻³ . By forming In—Sb bonding species at the interface between the InAs layer and the Al _0.8 Ga _0.2 As _0.16 Sb _0.84 layer, the electron mobility was greatly improved.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows film characteristics, and Table 4 shows device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 23 has a large Hall output voltage of 260 mV in a magnetic field having a magnetic flux density of 500 G at the rated input voltage. This value is three times or more the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 12, and showed good temperature characteristics even at 100 ° C. or higher. Also, the temperature change of the element resistance did not drop at all to about 150 ° C. as in the case of Example 12, indicating that the temperature dependency was excellent. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 150 ° C, which is impossible conventionally. It became clear what we could do. Also,
The use on the low temperature side did not cause any problem even at -50 ° C, and it was found that it was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

EXAMPLE 24 A non-doped Al _0.8 Ga _0.2 As _0.32 Sb _0.68 was formed as a first compound semiconductor layer on a surface of a GaAs substrate having a diameter of 2 inches by the MBE method.
μm was grown. Next, only Sb was irradiated to grow only one atomic layer. Next, at the same time as the irradiation of Sb was stopped, only In was irradiated to only one atomic layer. Subsequently, As and Ga are irradiated, and non-doped In _0.8 Ga _0.2 As is used as a sensor layer.
Was grown 150 °. Next, only In was irradiated again with only one atomic layer, and the irradiation of In was stopped, and at the same time, only Sb was irradiated. After forming one atomic layer of Sb, non-doped Al _0.8 Ga _0.2 As _0.32 Sb _0.68 is grown as a second compound semiconductor layer at 500 °, and GaAs is further formed as a cap layer.
_0.32 Sb _0.68 was grown at 100 _° . This In _0.8 Ga
The electron mobility value of the _0.2 As thin film is 16000 cm ² / V
s, sheet resistance 300Ω / □, electron concentration 0.87 ×
It was 10 ¹⁸ cm ^-3 . In _0.8 Ga _0.2 As layer and Al
By forming In—Sb bonding species at the interface of the _0.8 Ga ₀ , ₂ As _0.32 Sb _0.68 layer, the electron mobility was greatly improved.

Thereafter, a Hall element was manufactured in the same manner as in Example 4.

Table 3 shows the film characteristics, and Table 4 shows the device characteristics.
It was shown to.

As shown in Table 4, the Hall element of Example 24 has a large Hall output voltage of 225 mV at a rated input voltage in a magnetic field having a magnetic flux density of 500 G. This value is more than twice the average Hall output voltage of the GaAs Hall element. Further, the temperature characteristics of the Hall output voltage were the same as those in Example 17, and showed a good temperature characteristic even at 100 ° C. or higher. In addition, the temperature change of the element resistance did not drop at all to about 180 ° C. as in Example 17, indicating that the device had excellent temperature dependency. The element manufactured by resin molding with a standard mini-mold type has a coefficient of heat dissipation of about 2.3 mW / ° C. This element can be used even at a high temperature of 100 to 180 ° C, which is impossible conventionally. It became clear what we could do. Also,
The use on the low temperature side did not cause any problem even at −60 ° C., and it was found that it was reliable over a wide temperature range. As described above, the Hall element, which is one of the magnetic sensors of the present invention, has a large Hall output voltage in a magnetic field, that is, high sensitivity, can be used up to high temperatures, and has extremely high reliability.

The above results are summarized in Tables 1 and 2.
Table 4 below. Ranks A, B and C indicating the temperature characteristics in Tables 2 and 4 are as follows: A is very excellent in temperature characteristics,
Even at a high temperature, no decrease in the element resistance is observed. B
Has excellent temperature characteristics, but shows a slight decrease in element resistance at high temperatures, but does not hinder practical use. C has a large decrease in element resistance at high temperatures, which is a problem in practical temperature characteristics. To indicate that there is.

[0137]

[Table 1]

[0138]

[Table 2]

[0139]

[Table 3]

[0140]

[Table 4]

As described above, the present invention has been described with reference to the embodiments.
The present invention is not limited to these, and further, there are many examples based on the present invention, and various applications are possible, all of which are within the scope of the present invention.

[0142]

As described above, the semiconductor sensor of the present invention is a high-sensitivity, high-output magnetic sensor that has never existed as a magnetic sensor. In addition, thin film formation and element formation processes can be mass-produced and are engineeringly useful techniques. Furthermore, good crystallinity _{In x Ga 1-x As y} Sb
_1-y (0 <X ≦ 1.0, 0 ≦ y ≦ 1.0) The thin film layer is used as the magnetic sensing part, and the temperature dependence of the magnetic sensor output and the element resistance is small. High heat resistance and pressure resistance, wide usable temperature range and high reliability. For this reason, a wide range of applications that could not be achieved conventionally are possible, and the industrial usefulness is immense.

[Brief description of the drawings]

FIG. 1 is a sectional view and a top view showing the structure of a Hall element as a basic embodiment of a magnetic sensor of the present invention.

FIG. 2 is a cross-sectional view showing another embodiment of the present invention having a second compound semiconductor layer.

FIG. 3 is a cross-sectional view showing an embodiment having a structure in which electrons are supplied from first and second compound semiconductor layers.

FIG. 4 is an enlarged schematic view of the interface bonding species between the InAs layer and the first compound semiconductor layer.

5A and 5B are a cross-sectional view and a top view illustrating an example of a magnetoresistive element which is an example of the magnetic sensor of the present invention.

FIG. 6 is a schematic cross-sectional view showing an example of a hybrid magnetic sensor of the present invention in which a Hall element, which is an example of the magnetic sensor of the present invention, and a SiIC chip on which an IC circuit is formed are molded in the same package. is there.

FIG. 7 is a characteristic diagram illustrating a temperature characteristic of a Hall output voltage according to the first embodiment of the present invention.

FIG. 8 is a characteristic diagram illustrating a temperature change of an element resistance value according to the first embodiment of the present invention.

FIG. 9 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Embodiment 5 of the present invention.

FIG. 10 is a diagram showing a temperature change of an element resistance value in Example 5 of the present invention.

FIG. 11 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Example 12 of the present invention.

FIG. 12 is a characteristic diagram showing a temperature change of an element resistance value in Example 12 of the present invention.

FIG. 13 is a characteristic diagram showing a temperature characteristic of a Hall output voltage in Example 17 of the present invention.

FIG. 14 is a characteristic diagram showing a temperature change of an element resistance value in Example 17 of the present invention.

[Explanation of symbols]

 Reference Signs List 1 substrate 2 first compound semiconductor layer 3 sensor layer 4 ohmic electrode 5 electrode for bonding 6 second compound semiconductor layer 7 donor impurity 8 passivation layer 9 donor impurity 10 short bar electrode 11 magnetic sensor chip 12 SiIC chip 13 island Part 14 Lead 15 Wire 16 Mold resin

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Tatsuro Iwabuchi 2-1, Samejima, Fuji City, Shizuoka Prefecture Asahi Kasei Corporation

Claims (16)

[Claims] 1. An Al, Ga, In, and Al substrate formed on a substrate.
A first compound semiconductor layer having a high resistance of at least three elements containing Sb selected from the group consisting of As and P, and a semiconductor layer formed of an InAs thin film formed on the layer; Has a lattice constant within ± 5% of the lattice constant of InAs, and has a band gap energy larger than that of InAs. 2. An Al, Ga, In, and Al substrate formed on a substrate.
A high resistance first compound semiconductor layer containing three or more elements containing Sb selected from the group consisting of As and P, and an In _x Ga _1-x As (0 <x <1.0) thin film formed on the layer Having a semiconductor layer of In _x Ga _1-x
Has a lattice constant within ± 5% of the lattice constant of As, and
A laminate including a compound semiconductor, which has a band gap energy larger than In _x Ga _1-x As. 3. An Al, Ga, In, and Al substrate formed on a substrate.
A first compound semiconductor layer of high resistance more than 3 elements including Sb is selected from the group consisting of As and P, consisting of _{In x Ga 1-x As y} Sb 1-y thin film formed on the layer A semiconductor layer, wherein the first compound semiconductor is In _x Ga _1-x A
s _y Sb _1-y has a lattice constant within ± 5% of the lattice constant of, and characterized in that it has a larger band gap energy than the _{In x Ga 1-x As y} Sb 1-y A laminate including a compound semiconductor. 4. The semiconductor device according to claim 1, wherein an electron concentration of the semiconductor layer composed of the thin film is in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . Laminate. 5. The semiconductor device according to claim 1, wherein said first compound semiconductor layer is doped with a donor impurity.
The laminate according to any one of the above items. 6. The laminate according to claim 1, wherein a donor layer is doped in the semiconductor layer made of the thin film. 7. The method according to claim 1, wherein the donor impurity is Si, S, Ge,
The laminate according to claim 5, wherein the laminate is any one of Se. 8. A high-resistance second compound semiconductor layer is formed on an upper surface of the semiconductor layer composed of the thin film, and the second compound semiconductor is within ± 5% of a lattice constant of the semiconductor layer composed of the thin film. The laminate according to any one of claims 1 to 3, wherein the laminate has the following lattice constant and a band gap energy larger than that of the semiconductor layer formed of the thin film. 9. The laminate according to claim 8, wherein an electron concentration of the semiconductor layer formed of the thin film is in a range of 5 × 10 ¹⁶ to 8 × 10 ¹⁸ / cm ³ . 10. The semiconductor device according to claim 7, wherein at least one of said first compound semiconductor layer and said second compound semiconductor layer is doped with a donor impurity.
10. The laminate according to any one of items 9 to 9. 11. The laminate according to claim 8, wherein a donor impurity is doped in the semiconductor layer made of the thin film. 12. The method according to claim 12, wherein the donor impurity is Si, S, G
11. It is any one of e and Se.
Or the laminate according to 11. 13. An InAs lattice constant of ± 5 on a substrate.
%, Al, Ga, I having a lattice constant within% and having a band gap energy larger than
a step of forming a high-resistance first compound semiconductor layer containing three or more elements containing Sb selected from the group consisting of n, As, and P; and a step of forming a semiconductor layer made of an InAs thin film on the layer. A method of manufacturing a laminate including a compound semiconductor. 14. has a In _x Ga _1-x As lattice constant within ± 5% of the lattice constant of over a substrate, and In _x
Forming a high-resistance first compound semiconductor layer of at least three elements including Sb selected from the group consisting of Al, Ga, In, As and P having a band gap energy larger than Ga _1-x As; In _x Ga _1-x A on the layer
s (0 <x <1.0) A method for manufacturing a laminate including a compound semiconductor, comprising a step of forming a semiconductor layer composed of a thin film. 15. A top of the substrate _{In x Ga 1-x As y} Sb
_It has a lattice constant within ± 5% of the lattice constant of _1-y ,
_{And, In x Ga 1-x As} y Sb 1-y Al having a larger band-gap energy, Ga, In, the first compound, high resistance more than 3 elements including Sb is selected from the group consisting of As and P forming a semiconductor _{layer, in x Ga 1-x as} y Sb 1-y (0 <x ≦ 1.0 on the layer, 0
≦ y <1.0) A method for producing a laminate including a compound semiconductor, comprising a step of forming a semiconductor layer composed of a thin film. 16. The semiconductor device according to claim 16, wherein:
Having a lattice constant within ± 5% of the lattice constant of the semiconductor layer;
The laminate according to claim 13, further comprising a step of forming a second compound semiconductor layer having a band gap energy higher than that of the semiconductor layer and having a high resistance. Production method.