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JPH10215160A - Semiconductor switching circuit with protection function, welding machine and cutting machine - Google Patents

Semiconductor switching circuit with protection function, welding machine and cutting machine

Info

Publication number
JPH10215160A
JPH10215160A JP9018123A JP1812397A JPH10215160A JP H10215160 A JPH10215160 A JP H10215160A JP 9018123 A JP9018123 A JP 9018123A JP 1812397 A JP1812397 A JP 1812397A JP H10215160 A JPH10215160 A JP H10215160A
Authority
JP
Japan
Prior art keywords
circuit
detection circuit
voltage drop
power supply
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9018123A
Other languages
Japanese (ja)
Inventor
Akihiko Kitajima
明彦 北島
Kazuo Kimoto
一夫 木元
Akiko Hiramoto
朗子 平本
Yoshiyuki Tabata
芳行 田畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9018123A priority Critical patent/JPH10215160A/en
Publication of JPH10215160A publication Critical patent/JPH10215160A/en
Pending legal-status Critical Current

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  • Arc Welding Control (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the damage of a power element without being affected by external noise by incorporating one or plural circuits among an overcurrent detection circuit, overheat detection circuit and a control power voltage drop detection circuit in a semiconductor element and arranging an oscillation circuit outside the semiconductor element. SOLUTION: One or plural circuits among the overcurrent detection circuit 1b, the overheat detection circuit 1c and the control power voltage drop detection circuit 1d, a stop circuit 1f and the power element 1a having a switching function are incorporated in the semiconductor element 1. One or plural circuits in the detection circuits 1b-1d are connected to the stop circuit 1f. The oscillation circuit 2 outside the semiconductor element 1 is connected to the power element 1a and the stop circuit 1f in series. When the overcurrent of not less than a rating flows in the power element 1a, for example, a signal is sent from the detection circuit 1b to the stop circuit 1f and the stop circuit 1f interrupts the signal from the oscillation circuit 2 to the power element 1a. Thus, the power element 1a stops a switching operation before it is damaged.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、溶接,切断などの
比較的に外来ノイズや粉塵等の多い作業所において用い
る保護機能付半導体スイッチング回路および溶接機およ
び切断機に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switching circuit having a protection function, and a welding machine and a cutting machine used in a work place having a relatively large amount of external noise and dust such as welding and cutting.

【0002】[0002]

【従来の技術】従来の保護機能付半導体スイッチング回
路を用いたインバータ回路を有するアーク溶接機を図3
に沿って説明する。
2. Description of the Related Art FIG. 3 shows a conventional arc welding machine having an inverter circuit using a semiconductor switching circuit with a protection function.
It is explained along.

【0003】直流電源E(交流を整流したものを含む)
の直流電圧を、スイッチング機能を有するパワー素子1
aを用いたインバータ回路により高周波交流出力に変換
しトランスTに入力する。このトランスTの交流出力を
整流ダイオードDにより整流したアーク溶接機の直流出
力とする。また、前記インバータ回路のスイッチング機
能を有するパワー素子1aの破損を防止するため、過電
流検出回路1b,過熱検出回路1c,制御電源電圧低下
検出回路1d,停止回路1fを外部に設置していた。し
かし停止回路1fがパワー素子1aのスイッチング動作
を停止させるまでに要する時間が長いため、パワー素子
1aが破損してしまうことがあった。従来例として直流
出力のアーク溶接機を示したが、プラズマ切断機、抵抗
溶接機でも構成は同じである。なお、出力が交流のアー
ク溶接機等の場合には、図3の整流ダイオードDが不要
となる。
[0003] DC power supply E (including rectified AC)
Power element 1 having a switching function
The signal is converted into a high-frequency AC output by an inverter circuit using a and input to the transformer T. The AC output of the transformer T is used as the DC output of the arc welding machine rectified by the rectifier diode D. Further, in order to prevent the power element 1a having the switching function of the inverter circuit from being damaged, an overcurrent detection circuit 1b, an overheat detection circuit 1c, a control power supply voltage drop detection circuit 1d, and a stop circuit 1f are provided outside. However, since the time required for the stop circuit 1f to stop the switching operation of the power element 1a is long, the power element 1a may be damaged. Although a DC output arc welding machine is shown as a conventional example, the configuration is the same for a plasma cutting machine and a resistance welding machine. When the output is an AC arc welding machine or the like, the rectifier diode D shown in FIG. 3 is not required.

【0004】つぎに、溶接機以外の一般的な電気機器で
は、インバータ回路を構成するパワー素子1aの破損を
防止するため、図4に示すように過電流検出回路1d,
過熱検出回路1c,制御電源電圧低下検出回路1d,停
止回路1fを内蔵した半導体素子11を使用する。この
半導体素子11は前記過電流検出回路1b,過熱検出回
路1c,制御電源電圧低下検出回路1d,停止回路1f
とともに前記パワー素子1aにスイッチング動作をさせ
るための発振回路1e(一般的にドライバ回路または駆
動回路と称する)を内蔵している。そして、命令回路1
2から命令信号12aが入力端子1e−1を通して半導
体素子11の発振回路1eに送られる。
Next, in a general electric device other than a welding machine, in order to prevent the power element 1a constituting the inverter circuit from being damaged, as shown in FIG.
A semiconductor element 11 having a built-in overheat detection circuit 1c, a control power supply voltage drop detection circuit 1d, and a stop circuit 1f is used. The semiconductor element 11 includes the overcurrent detection circuit 1b, the overheat detection circuit 1c, the control power supply voltage drop detection circuit 1d, and the stop circuit 1f.
In addition, an oscillation circuit 1e (generally called a driver circuit or a drive circuit) for causing the power element 1a to perform a switching operation is incorporated. And the instruction circuit 1
2, the command signal 12a is sent to the oscillation circuit 1e of the semiconductor element 11 through the input terminal 1e-1.

【0005】しかし一般的な電気機器に使用される保護
機能付半導体素子11は入力端子1e−1以外に前記の
過電流検出回路1b,過熱検出回路1c,制御電源電圧
低下検出回路1dが保護動作を行った場合に外部へ信号
を出力するため過電流検出回路1bの信号出力端子1b
−1、過熱検出回路1cの信号出力端子1c−1、制御
電源電圧低下検出回路1dの信号出力端子1d−1を有
している。このような保護機能付半導体素子11を溶接
機や切断機等には使用できない。
However, in addition to the input terminal 1e-1, the overcurrent detection circuit 1b, the overheat detection circuit 1c, and the control power supply voltage drop detection circuit 1d of the semiconductor element 11 having a protection function used for general electric equipment perform a protection operation. Signal output terminal 1b of the overcurrent detection circuit 1b in order to output a signal to the outside when
-1, a signal output terminal 1c-1 of the overheat detection circuit 1c, and a signal output terminal 1d-1 of the control power supply voltage drop detection circuit 1d. Such a semiconductor element 11 with a protection function cannot be used for a welding machine, a cutting machine or the like.

【0006】[0006]

【発明が解決しようとする課題】すなわち、従来の溶接
機や切断機等ではパワー素子1aの破損を防止するため
の停止回路1fがパワー素子1aのスイッチング動作を
停止させるまでに要する時間が長いため、パワー素子1
aが破損してしまうことがあった。
That is, in a conventional welding machine, cutting machine or the like, the time required for the stop circuit 1f for preventing the breakage of the power element 1a to stop the switching operation of the power element 1a is long. , Power element 1
a was sometimes damaged.

【0007】また上記の一般的な電気機器の保護機能付
半導体素子11は外部への過電流検出回路1bの信号出
力端子1b−1、過熱検出回路1cの信号出力端子1c
−1、制御電源電圧低下検出回路1dの信号出力端子1
d−1および発振回路1eへ命令信号12aを伝える入
力端子1e−1を有していたため、入力端子1e−1の
端子間距離Lを大きくとれない構造となっていた。その
ため溶接,切断など導電性の粉塵の多い作業所において
は、端子間距離Lでは、絶縁距離として不十分である。
The above-mentioned semiconductor device 11 with a protection function for general electric equipment includes a signal output terminal 1b-1 of an overcurrent detection circuit 1b to the outside and a signal output terminal 1c of an overheat detection circuit 1c.
-1, signal output terminal 1 of control power supply voltage drop detection circuit 1d
Since the input terminal 1e-1 for transmitting the command signal 12a to d-1 and the oscillation circuit 1e was provided, the distance L between the input terminals 1e-1 could not be large. Therefore, in a work place having a lot of conductive dust such as welding and cutting, the distance L between terminals is not sufficient as an insulation distance.

【0008】また、端子間距離Lが溶接,切断など導電
性の粉塵で短絡された場合には、過電流検出回路1bの
信号出力端子1d−1、過熱検出回路1cの信号出力端
子1c−1、制御電源電圧低下検出回路1dの信号出力
端子1d−1および発振回路1eへ命令信号12aを伝
える入力端子1e−1の信号が正しく伝わらずパワー素
子1aの破損の原因となる。またパワー素子1aにスイ
ッチング動作をさせるための発振回路1eに対する命令
信号12aは命令回路12から十数mAの微弱電流信号と
して送られる。さらに一般的な電気機器の保護機能付半
導体素子11では発振回路1eを内蔵しており命令回路
12は保護機能付半導体素子11の外部にあるために、
十数mAの微弱電流の命令信号12aは長い経路を伝える
必要がある。そのため溶接,切断などの比較的に外来ノ
イズの多い作業所においれ命令回路12から発振回路1
eへの命令信号12aは、ノイズの影響を受けやすく、
命令信号12aが正しく伝わらずにパワー素子の破損の
原因となる。上記のように、溶接,切断など外来ノイズ
や粉塵等の多い作業所で使われるアーク溶接機等におい
ては、一般的な電気機器の保護機能付半導体素子は有効
に機能しないためパワー素子1aが破損する恐れがあっ
た。
When the terminal distance L is short-circuited by conductive dust such as welding or cutting, the signal output terminal 1d-1 of the overcurrent detection circuit 1b and the signal output terminal 1c-1 of the overheat detection circuit 1c are provided. In addition, the signal at the signal output terminal 1d-1 of the control power supply voltage drop detection circuit 1d and the signal at the input terminal 1e-1 for transmitting the command signal 12a to the oscillation circuit 1e are not correctly transmitted, which may cause damage to the power element 1a. A command signal 12a for the oscillation circuit 1e for causing the power element 1a to perform a switching operation is sent from the command circuit 12 as a weak current signal of tens of mA. Further, in a general semiconductor device with a protection function 11 of an electric device, an oscillation circuit 1e is built in, and since an instruction circuit 12 is outside the semiconductor device 11 with a protection function,
The command signal 12a with a weak current of about 10 mA needs to transmit a long path. For this reason, it is necessary to place the work circuit such as welding or cutting in a work place where a relatively large amount of external noise is present.
The command signal 12a to e is susceptible to noise,
The command signal 12a is not transmitted correctly, which causes damage to the power element. As described above, in an arc welding machine or the like used in a work place where there is a lot of external noise or dust such as welding and cutting, the semiconductor element with a protection function of general electric equipment does not function effectively, so the power element 1a is damaged. There was a fear of doing.

【0009】本発明は上記従来の課題を解決することを
目的とするものである。
An object of the present invention is to solve the above-mentioned conventional problems.

【0010】[0010]

【課題を解決するための手段】この目的を達成するため
に、本発明は、サイリスタ,トランジスタ,IGBT
(Insulated Gate Bipolar T
ransistor)スイッチング機能を持つパワー素
子と、前記パワー素子に流れた過電流を検出する過電流
検出回路と、前記パワー素子の過熱を検出する過熱検出
回路、制御電源電圧低下を検出する制御電源電圧低下検
出回路を単独で、もしくは複数で内蔵し、前記過電流検
出回路,前記過熱検出回路,前記制御電源低下電圧検出
回路からの単独または複数の信号により前記パワー素子
を停止させる停止回路を内蔵した保護機能付半導体スイ
ッチング回路であって、半導体素子内部に、前記過電流
検出回路,前記過熱検出回路,前記制御電源電圧低下検
出回路のうち1つもしくは複数を内蔵し、かつ前記停止
回路を前記パワー素子を内蔵し、前記過電流検出回路,
前記過熱検出回路,前記制御電源電圧低下検出回路のう
ち1つもしくは複数と前記停止回路を接続し、内蔵され
た前記過電流検出回路,前記過熱検出回路,前記制御電
源電圧低下検出回路は前記半導体素子外部への出力端子
を持たないものである。
To achieve this object, the present invention provides a thyristor, a transistor, an IGBT,
(Insulated Gate Bipolar T
a power element having a switching function, an overcurrent detection circuit for detecting an overcurrent flowing through the power element, an overheat detection circuit for detecting overheating of the power element, and a control power supply voltage drop for detecting a control power supply voltage drop. A protection circuit having a built-in detection circuit singly or plurally, and a built-in stop circuit for stopping the power element by one or a plurality of signals from the overcurrent detection circuit, the overheat detection circuit, and the control power supply low voltage detection circuit. A semiconductor switching circuit with a function, wherein one or more of the overcurrent detection circuit, the overheat detection circuit, and the control power supply voltage drop detection circuit are built in a semiconductor element, and the stop circuit is provided with the power element. The overcurrent detection circuit,
One or more of the overheat detection circuit and the control power supply voltage drop detection circuit is connected to the stop circuit, and the built-in overcurrent detection circuit, the overheat detection circuit, and the control power supply voltage drop detection circuit are connected to the semiconductor. It does not have an output terminal to the outside of the element.

【0011】また、本発明の溶接機は前記保護機能付半
導体スイッチング回路を用いたインバータ回路を有する
ものである。
Further, the welding machine of the present invention has an inverter circuit using the semiconductor switching circuit with the protection function.

【0012】さらに、本発明の切断機は前記保護機能付
半導体スイッチング回路を用いたインバータ回路を有す
るものである。
Further, the cutting machine of the present invention has an inverter circuit using the semiconductor switching circuit with the protection function.

【0013】[0013]

【発明の実施の形態】上記の構成により、本発明の保護
機能付半導体スイッチング回路は半導体素子の外部へ信
号を出力する過電流検出回路の信号出力端子、過熱検出
回路の信号出力端子、制御電源電圧低下検出回路の信号
出力端子を廃して発振回路から停止回路への入力端子の
端子間距離を確保したものであり、発振回路への十数mA
の微弱電流の命令信号を、短い経路で伝えるために発振
回路を半導体素子の外部に配置したことにより、外来ノ
イズの影響を受けないので、パワー素子お破損を防止す
る作用を有する。また、本発明の溶接機や切断機は上記
保護機能付半導体スイッチング回路を有するもので、外
来ノイズの影響を受け易い作業所においても安定した動
作をする作用を有する。
With the above arrangement, the semiconductor switching circuit with a protection function of the present invention has a signal output terminal of an overcurrent detection circuit for outputting a signal to the outside of a semiconductor element, a signal output terminal of an overheat detection circuit, and a control power supply. The signal output terminal of the voltage drop detection circuit has been eliminated to secure the distance between the input terminal of the oscillation circuit and the input terminal to the stop circuit.
By arranging the oscillation circuit outside the semiconductor element to transmit the weak current command signal through a short path, the oscillation circuit is not affected by external noise and has an effect of preventing the power element from being damaged. Further, the welding machine and the cutting machine of the present invention have the above-mentioned semiconductor switching circuit with a protection function, and have a function of performing a stable operation even in a work place which is easily affected by external noise.

【0014】以下、本発明の実施の形態について、図1
および図2に沿って説明する。図1は本発明の実施の形
態の保護機能付半導体スイッチング回路を示す。すなわ
ち、半導体素子1の内部には過電流検出回路1b,過熱
検出回路1c,制御電源電圧低下検出回路1dのうち1
つもしくは複数と、停止回路1fと、スイッチング機能
を有するパワー素子1aが内蔵され、過電流検出回路1
b,過熱検出回路1c,制御電源電圧低下検出回路1d
のうち、1つもしくは複数と前記停止回路1fを接続
し、前記半導体素子1の外部の発振回路2がパワー素子
1aと停止回路1fに直列に接続されている。
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
It will be described with reference to FIG. FIG. 1 shows a semiconductor switching circuit with a protection function according to an embodiment of the present invention. That is, one of the overcurrent detection circuit 1b, the overheat detection circuit 1c, and the control power supply voltage drop detection circuit 1d is provided inside the semiconductor element 1.
One or more, a stop circuit 1f, and a power element 1a having a switching function.
b, overheat detection circuit 1c, control power supply voltage drop detection circuit 1d
Of these, one or a plurality of them are connected to the stop circuit 1f, and an oscillation circuit 2 outside the semiconductor element 1 is connected in series to the power element 1a and the stop circuit 1f.

【0015】そして、パワー素子1aにその定格以上の
過電流が流れた場合には、過電流検出回路1bから停止
回路1fへと信号が送られ、停止回路1fが発振回路2
からパワー素子1aへの信号を遮断することにより、前
記パワー素子1aは破損前いスイッチング動作を停止す
る。
When an overcurrent exceeding the rating flows through the power element 1a, a signal is sent from the overcurrent detection circuit 1b to the stop circuit 1f, and the stop circuit 1f is turned on by the oscillation circuit 2f.
By interrupting the signal from the power element 1a to the power element 1a, the power element 1a stops the switching operation before being damaged.

【0016】また、前記パワー素子1aがその定格以上
の温度になった場合には過熱検出回路1cから停止回路
1fへと信号が送られ、停止回路1fが発振回路2から
パワー素子1aへの信号を遮断することにより、前記パ
ワー素子1aは破損前にスイッチング動作を停止する。
When the temperature of the power element 1a becomes higher than its rated value, a signal is sent from the overheat detection circuit 1c to the stop circuit 1f, and the stop circuit 1f sends a signal from the oscillation circuit 2 to the power element 1a. , The switching operation of the power element 1a is stopped before the power element 1a is damaged.

【0017】さらに、パワー素子1aがその定格以下の
電圧を受けた場合には制御電源電圧低下検出回路1dか
ら停止回路1fへと信号が送られ、停止回路1fが発振
回路2からパワー素子1aへの信号を遮断することによ
り、前記パワー素子1aは破損前にスイッチング動作を
停止する。
Further, when the power element 1a receives a voltage lower than the rated voltage, a signal is sent from the control power supply voltage drop detection circuit 1d to the stop circuit 1f, and the stop circuit 1f sends the signal from the oscillation circuit 2 to the power element 1a. , The switching operation of the power element 1a is stopped before the power element 1a is damaged.

【0018】また上記は、過電流検出回路1b,過熱検
出回路1c,制御電源電圧低下検出回路1dの各動作点
を定格外に設定した場合においての実施例の説明である
が、過電流検出回路1b,過熱検出回路1c,制御電源
電圧低下検出回路1dの各動作点は任意に設定できる。
The above is an explanation of the embodiment in the case where the operating points of the overcurrent detection circuit 1b, the overheat detection circuit 1c, and the control power supply voltage drop detection circuit 1d are set out of the rating. 1b, the overheat detection circuit 1c, and the control power supply voltage drop detection circuit 1d can be set to any operating point.

【0019】これらの過電流検出回路1b,過熱検出回
路1c,制御電源電圧低下検出回路1dは外部への出力
端子を備えていないため、前記半導体素子1の外部接続
端子は入力端子1f−1のみであり、溶接,切断など導
電性の粉塵の多い作業所においても十分な絶縁距離Lを
確保することができる利点を有する。
Since the overcurrent detection circuit 1b, the overheat detection circuit 1c, and the control power supply voltage drop detection circuit 1d have no output terminal to the outside, the external connection terminal of the semiconductor element 1 is only the input terminal 1f-1. In addition, there is an advantage that a sufficient insulation distance L can be ensured even in a work place having a large amount of conductive dust such as welding and cutting.

【0020】また、前記半導体素子1への信号は、ノイ
ズの影響を受け難い発振回路2から出力される信号であ
るため、溶接,切断など外来ノイズの多い作業所におい
ても安定した動作が可能である。
Further, since the signal to the semiconductor element 1 is a signal output from the oscillation circuit 2 which is hardly affected by noise, a stable operation can be performed even in a work place having a lot of external noise such as welding and cutting. is there.

【0021】図2は図1の保護機能付半導体スイッチン
グ回路を用いたインバータ回路を有する溶接機または切
断機の実施の形態を示す。従来例の図3を同じく直流電
源Eの直流電圧をインバータ回路により高周波の交流に
変換しトランスTに入力する。このトランスTの交流出
力を整流ダイオードDにより整流し溶接機または切断機
の直流出力とする。
FIG. 2 shows an embodiment of a welding machine or cutting machine having an inverter circuit using the semiconductor switching circuit with a protection function of FIG. 3, the DC voltage of the DC power supply E is converted into a high-frequency AC by an inverter circuit and input to the transformer T. The AC output of the transformer T is rectified by the rectifier diode D to be a DC output of a welding machine or a cutting machine.

【0022】[0022]

【発明の効果】本発明の保護機能付半導体スイッチング
回路は、半導体素子の内部に、過電流検出回路,過熱検
出回路,制御電源電圧低下検出回路のうち、1つもしく
は複数と停止回路を接続し、半導体素子の外部の発振回
路を前記停止回路とパワー素子に直列に接続し、内蔵さ
れた過電流検出回路,過熱検出回路,制御電源電圧低下
検出回路は前記半導体素子の外部への出力端子をそれぞ
れ持たないため、前記半導体素子の外部接続端子は発振
回路からの入力端子のみとなり、端子間絶縁距離を十分
に確保することができ、外来ノイズの影響を受けず、前
記パワー素子が破損しない優れた効果を奏するものであ
る。
According to the semiconductor switching circuit with a protection function of the present invention, one or more of an overcurrent detection circuit, an overheat detection circuit and a control power supply voltage drop detection circuit are connected to a stop circuit inside a semiconductor element. An oscillation circuit external to the semiconductor element is connected in series with the stop circuit and the power element, and a built-in overcurrent detection circuit, overheat detection circuit, and control power supply voltage drop detection circuit connect an output terminal to the outside of the semiconductor element. Since they do not have respective components, the external connection terminal of the semiconductor element is only an input terminal from the oscillation circuit, and a sufficient insulation distance between the terminals can be ensured, and the power element is not affected by external noise and is not damaged. It has the effect that it has.

【0023】また、本発明の溶接機や切断機は保護機能
付半導体スイッチング回路を用いたインバータ回路を有
するもので、外来ノイズや粉塵等の多い作業所での使用
においてパワー素子の破損を防止できる優れた効果を奏
するものである。
Further, the welding machine and the cutting machine of the present invention have an inverter circuit using a semiconductor switching circuit with a protection function, so that the power element can be prevented from being damaged when used in a work place with a lot of external noise and dust. It has excellent effects.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態における保護機能付半導体
スイッチング回路のブロック回路図
FIG. 1 is a block circuit diagram of a semiconductor switching circuit with a protection function according to an embodiment of the present invention.

【図2】同保護機能付半導体スイッチング回路を使用し
たインバータ回路のブロック回路図
FIG. 2 is a block circuit diagram of an inverter circuit using the semiconductor switching circuit with the protection function.

【図3】従来例のインバータ回路のブロック回路図FIG. 3 is a block circuit diagram of a conventional inverter circuit.

【図4】一般的な電気機器で使用される保護機能付半導
体素子のブロック回路図
FIG. 4 is a block circuit diagram of a semiconductor device with a protection function used in general electric equipment.

【符号の説明】[Explanation of symbols]

1 半導体素子 1a パワー素子 1b 過電流検出回路 1c 制御電源電圧低下検出回路 1f 停止回路 2 発振回路 Reference Signs List 1 semiconductor element 1a power element 1b overcurrent detection circuit 1c control power supply voltage drop detection circuit 1f stop circuit 2 oscillation circuit

フロントページの続き (72)発明者 田畑 芳行 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Continuation of the front page (72) Inventor Yoshiyuki Tabata 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】サイリスタ,トランジスタ,IGBT等の
スイッチング機能を持つパワー素子と、前記パワー素子
にスイッチング動作をさせるための発振回路と、前記パ
ワー素子に流れた過電流を検出する過電流検出回路と、
前記パワー素子の過熱を検出する過熱検出回路と、前記
パワー素子の制御電源電圧低下を検出する制御電源電圧
低下検出回路と前記過電流検出回路、前記過熱検出回
路、前記制御電源電圧低下検出回路からの単独または複
数の信号により前記発振回路から前記パワー素子への信
号を遮断する停止回路を備えた保護機能付半導体スイッ
チング回路であって、半導体素子の内部に、前記過電流
検出回路,前記過熱検出回路,前記制御電源電圧低下検
出回路のうち1つもしくは複数を内蔵し、かつ前記停止
回路と前記パワー素子を内蔵し、前記過電流検出回路,
前記過熱検出回路,前記制御電源電圧低下検出回路のう
ち1つもしくは複数と前記停止回路を接続し、前記半導
体素子の外部の前記発振回路を前記パワー素子と前記停
止回路に直列に接続し、内蔵された前記過電流検出回路
または前記過熱検出回路または前記制御電源電圧低下検
出回路は前記半導体素子の外部への出力端子を持たない
保護機能付半導体スイッチング回路。
A power device having a switching function such as a thyristor, a transistor, or an IGBT; an oscillation circuit for causing the power device to perform a switching operation; and an overcurrent detection circuit for detecting an overcurrent flowing through the power device. ,
An overheat detection circuit that detects overheating of the power element, a control power supply voltage drop detection circuit that detects a control power supply voltage drop of the power element, the overcurrent detection circuit, the overheat detection circuit, and the control power supply voltage drop detection circuit. A protection switching semiconductor circuit including a stop circuit for interrupting a signal from the oscillation circuit to the power element by one or more signals, wherein the overcurrent detection circuit and the overheat detection circuit are provided inside a semiconductor element. Circuit, one or more of the control power supply voltage drop detection circuits, and the stop circuit and the power element.
One or more of the overheat detection circuit and the control power supply voltage drop detection circuit are connected to the stop circuit, the oscillation circuit outside the semiconductor element is connected in series to the power element and the stop circuit, and A semiconductor switching circuit with a protection function, wherein the overcurrent detection circuit, the overheat detection circuit, or the control power supply voltage drop detection circuit does not have an output terminal to the outside of the semiconductor element.
【請求項2】請求項1記載の保護機能付半導体スイッチ
ング回路を用いたインバータ回路を有する溶接機。
2. A welding machine having an inverter circuit using the semiconductor switching circuit with a protection function according to claim 1.
【請求項3】請求項1記載の保護機能付半導体スイッチ
ング回路を用いたインバータ回路を有する切断機
3. A cutting machine having an inverter circuit using the semiconductor switching circuit with a protection function according to claim 1.
JP9018123A 1997-01-31 1997-01-31 Semiconductor switching circuit with protection function, welding machine and cutting machine Pending JPH10215160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9018123A JPH10215160A (en) 1997-01-31 1997-01-31 Semiconductor switching circuit with protection function, welding machine and cutting machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9018123A JPH10215160A (en) 1997-01-31 1997-01-31 Semiconductor switching circuit with protection function, welding machine and cutting machine

Publications (1)

Publication Number Publication Date
JPH10215160A true JPH10215160A (en) 1998-08-11

Family

ID=11962836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9018123A Pending JPH10215160A (en) 1997-01-31 1997-01-31 Semiconductor switching circuit with protection function, welding machine and cutting machine

Country Status (1)

Country Link
JP (1) JPH10215160A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010536118A (en) * 2007-07-23 2010-11-25 ヒュッティンガー エレクトローニク ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト Method of operating plasma power supply apparatus and plasma power supply apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device
JPH06244414A (en) * 1993-02-22 1994-09-02 Hitachi Ltd Protective circuit and semiconductor device containing the same
JPH07176733A (en) * 1993-09-14 1995-07-14 Internatl Rectifier Corp Semiconductor power device and breaking circuit therefor
JPH08316808A (en) * 1995-05-16 1996-11-29 Fuji Electric Co Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device
JPH06244414A (en) * 1993-02-22 1994-09-02 Hitachi Ltd Protective circuit and semiconductor device containing the same
JPH07176733A (en) * 1993-09-14 1995-07-14 Internatl Rectifier Corp Semiconductor power device and breaking circuit therefor
JPH08316808A (en) * 1995-05-16 1996-11-29 Fuji Electric Co Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010536118A (en) * 2007-07-23 2010-11-25 ヒュッティンガー エレクトローニク ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト Method of operating plasma power supply apparatus and plasma power supply apparatus
US8482205B2 (en) 2007-07-23 2013-07-09 Huettinger Elektronik Gmbh + Co. Kg Driving switches of a plasma load power supply
US8643279B2 (en) 2007-07-23 2014-02-04 Huettinger Elektronik Gmbh + Co. Kg Determining high frequency operating parameters in a plasma system
US8866400B2 (en) 2007-07-23 2014-10-21 Trumpf Huettinger Gmbh + Co. Kg Plasma supply device

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