JPH10214788A - Vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth device with which the dismantling work of reaction furnaces other than one reaction furnace can be performed safely, even when vapor growth takes place in the reaction furnace. SOLUTION: A vapor growth device is provided with a gas supplying system 5, a plurality of reaction systems 9a and 9b, and an exhaust gas processing system 12 and the systems 5 and 12 can be connected to the reaction systems 9a or 9b by switching. The systems 5 and 9a are connected to a connecting pipe 17a for supplying a gaseous material through two stages of valves 30a and 31a, and a purge gas introducing pipe 61a for introducing a purge gas and an independent exhaust pipe 64a for discharging the purge gas are connected to the connecting pipe 17a between the valves 30a and 30b. Similarly, the gas supplying system 5, reaction system 9a, and reaction system 9b are respectively connected to the reaction system 9b, exhaust gas processing system 12, and processing system 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a vapor phase growth apparatus, and more particularly, to a vapor phase growth method capable of improving the productivity of vapor phase growth using a toxic gas or a flammable gas for forming a semiconductor thin film. Related to the device.

[0002]

2. Description of the Related Art A semiconductor vapor deposition apparatus has good controllability,
Because it is suitable for mass production, it is becoming an important part of the semiconductor industry. FIG. 3 shows a general configuration of a semiconductor vapor deposition apparatus. This semiconductor vapor phase growth apparatus comprises: (a) a source gas supply source 1a, 1b, 1c, 1d, a carrier gas supply source 2 and a purge gas supply source 3; (B) a susceptor 7 on which the semiconductor substrate 6 is placed, a reaction furnace 4 equipped with a heater (not shown) as a heating source, and a preliminary chamber 8 for lowering the susceptor 7 to put the substrate 6 in and out. Further, a reaction system 9 is provided near the outside of the reaction furnace 4 and includes a trap 16 for collecting powder generated by the reaction. (C) A detoxification treatment section 10 for detoxifying exhaust gas from the reaction system and an exhaust pump 11 are provided. And an exhaust gas processing system 12. 13 is a source gas supply line,
Reference numeral 15 denotes a vent line for discarding the source gas.

A general process for vapor-phase growing a thin film is as follows. (A) After replacing the residual gas in the preliminary chamber 8 with an inert gas, the preliminary chamber 8 is opened and the substrate 6 is set on the susceptor 7 (pre-purge step). (B) Next, the door of the preliminary chamber 8 is closed, the inside of the preliminary chamber 8 is replaced with an inert gas, and then the susceptor 7 is moved to the reaction furnace 4 (pre-purge step). (C) Next, while heating the reaction furnace 4, the source gas is introduced into the reaction furnace 4 with a carrier gas to cause vapor phase growth (vapor phase growth step). (D) The susceptor 7 is moved to the preliminary chamber 8 again, and the inside of the reaction furnace 4 is replaced with a carrier gas, and the inside of the preliminary chamber 8 is replaced with an inert purge gas (post-purging step). (E) Thereafter, the substrate 6 is taken out of the preliminary chamber 8.

In order to improve the efficiency of vapor phase growth, carrier gas purge lines 14a and 14b are added to one gas supply system 5 as shown in FIG. 4 and connected to a plurality of reactors 4a and 4b. A method is employed in which one reaction system 9a performs vapor phase growth while the other reaction system 9b performs pre-purging or post-purging. At this time, the source gas supply line 13 is connected to the valves 30a, 31a and the valve 30a.
The reactors 4a and 4b to be supplied in b and 31b are switched. Also, in order to reduce equipment costs, the exhaust gas treatment system 12 is also integrated into one
A method is used in which purge gases and source gases from the chambers a and 4b and the preliminary chambers 8a and 8b are combined and exhausted from the exhaust line 19. At this time, each reaction furnace 4a, 4b and each preliminary chamber 8
The exhaust gas from a, 8b is supplied to valves 32a, 33a, 3b.
4a and the valves 32b, 33b, 34b are introduced into the exhaust gas treatment system 12.

[0005]

However, in the above-described semiconductor vapor deposition apparatus, the traps 16 from the inner walls of the reactors 4a and 4b, the susceptor 7, and the reactors 4a and 4b.
A large amount of reaction products adhere to and accumulate on the exhaust pipes extending to a and 16b, and a large amount of powder accumulates in the traps 16a and 16b. Therefore, in order to maintain the quality of the vapor-grown film, the reactors 4a and 4b and the susceptor 7 are periodically dismantled and exchanged every 50 to 100 batches, the filters of the traps 16a and 16b are exchanged, and the exhaust line 19 is cleaned. is required. In an apparatus having a plurality of reactors 4a and 4b as described above,
The switching valve 3 of the source gas supply line 13 so that the growth can be performed in the other reactor even during the dismantling operation of one reactor.
As in the case of 0a, 31a and the valves 30b, 31b, the valve is provided in two stages with respect to the source gas flow to prevent the source gas from flowing out. Further, the exhaust valves 32a, 33a, 34a and exhaust valves 32b, 33b, 34b before the junction A of the exhaust pipes of the plurality of reactors 4a, 4b are arranged in two stages to stop the exhaust gas from flowing out. ing. Nevertheless, if an internal leak occurs due to the inferiority of the valve or the like, the disassembly operator will be exposed to raw gas or exhaust gas, which is a toxic gas or a flammable gas, and lack safety. For this reason, there has been a problem that the dismantling operation of the other reactor cannot be performed during growth in one reactor. Even in the case of an exhaust system, if gas phase growth is performed under conditions where the pressure is higher than the atmospheric pressure, gas may leak. An object of the present invention is to provide a vapor phase growth apparatus that can safely disassemble other reactors while at least one of a plurality of reactors is in vapor phase growth.

[0006]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the invention according to claim 1 has a source gas supply system, a plurality of reaction systems, and an exhaust gas treatment system. The source gas supply system and the exhaust gas treatment system are a vapor phase growth apparatus that can be connected and switched to the plurality of reaction systems, wherein the source gas supply system and the reaction system are two-stage valves arranged in series. And a reaction system and an exhaust gas treatment system are connected by an exhaust gas exhaust connection pipe having two-stage valves arranged in series, and a two-stage exhaust gas connection pipe of each connection pipe is provided. A gas phase growth apparatus is characterized in that a purge gas introduction pipe for introducing a purge gas and an independent exhaust pipe for exhausting gas are connected between the valves. Here, the independent exhaust pipe is an exhaust pipe that is directly connected to an exhaust gas processing unit or the like and is separated from other exhaust pipes incorporated in the device. The invention according to claim 2 is characterized in that the source gas supply connection pipe and the exhaust gas exhaust connection pipe are connected to each other.
A vapor phase growth apparatus is characterized in that a vacuum tube for vacuuming is connected between the valves of the stages.

According to the first aspect of the present invention, during vapor phase growth in at least one of the plurality of reaction systems, dismantling of other reaction systems, replacement of trap filters, and cleaning of exhaust pipes are performed. At this time, the two-stage valve of the source gas supply connection pipe between the source gas supply system and the reaction system for dismantling or the like is closed, and a purge gas is introduced and exhausted during that time. Then, even if the source gas supply system side valve of the source gas supply connection pipe is deteriorated and the source gas leaks, the leaked source gas is exhausted from the connection pipe together with the purge gas to the exhaust gas processing unit. It does not have any adverse effects. Similarly, of the two-stage valve of the exhaust gas exhaust connection pipe connecting the reaction system and the exhaust gas treatment system, even if the exhaust gas treatment system side valve deteriorates and the exhaust gas leaks,
Since this exhaust gas is directly exhausted to the exhaust gas processing section together with the purge gas, there is no adverse effect on the dismantling operation and the like.

In the invention according to claim 2, the two-stage valve of the source gas supply connection pipe of the reaction system for performing dismantling work and the like and the source gas supply system are closed and evacuated, so that the source gas supply system side Even if the valve is deteriorated and the source gas leaks, the leaked source gas is exhausted by the vacuum pump, so that there is no adverse effect on the disassembly operation and the like. The same applies to the exhaust gas exhaust connection pipe between the reaction system and the exhaust gas treatment system.

[0009]

Embodiments of the present invention will be described below in detail with reference to the drawings. (Embodiment 1) FIG. 1 is an explanatory view of one embodiment of a vapor phase growth apparatus according to the present invention. In FIG. 1, the same parts as those in FIGS. 3 and 4 are denoted by the same reference numerals. The apparatus according to the present embodiment includes a gas supply system 5 including a source gas supply system, a carrier gas supply system, and a purge gas supply system, a reaction system 9a including a reaction furnace 4a, and a reaction system 9b including a reaction furnace 4b.
, And an exhaust system 12. The source gas supply system includes source gas supply sources 1a, 1b, 1
c, 1d, the carrier gas supply system includes a carrier gas supply source 2, and the purge gas supply system includes a purge gas supply source 3. Further, the exhaust gas treatment system 12 includes
And an exhaust pump 11. The gas supply system 5, the reaction systems 9a and 9b, and the exhaust gas treatment system 12 of the vapor phase growth apparatus are each covered by an independent cabinet, and the inside of the cabinet is forcibly ventilated by a ventilation blower. Therefore, even if gas leaks from the gas pipes or the reaction furnaces 4a and 4b, it is safely designed so as not to be exposed to the human body as long as it is outside the cabinet.

The source gas supply line 13 and the reaction system 9a are connected by a source gas supply connection pipe 17a, and two-stage valves 30a and 31a are installed in the source gas supply connection pipe 17a in series with respect to the source gas flow. I have. Further, an inert purge gas introduction pipe 61a and an exhaust pipe 64a are connected to the source gas supply connection pipe 17a between the valves 30a and 31a. The exhaust pipe 64a is not connected to other pipes, but is independently connected to the abatement unit 10. Similarly, the source gas supply line 13
And the reaction system 9b are connected by a source gas supply connection pipe 17b,
The two-stage valve 30b, 3
1b is installed in series with the feed gas stream. The source gas supply connection pipe 17b has valves 30b, 31
b, an inert purge gas introduction pipe 61b and an exhaust pipe 64b
Is connected. The exhaust pipe 64b is not connected to other pipes,
It is independently connected to the abatement unit 10.

The reaction system 9a and the exhaust gas processing system 12 are connected by exhaust gas exhaust connection pipes 18a and 21a, and two-stage valves 32a and 34a are installed in the exhaust gas exhaust connection pipe 18a in series with the exhaust gas. And the exhaust gas exhaust connection pipe 21
In a, two-stage valves 33a and 34a are installed in series with respect to the exhaust gas flow. Also, the exhaust gas exhaust connection pipe 1
An inert purge gas introduction pipe 71a is connected to the valve 8a between the valves 32a and 34a, and an exhaust pipe 74a is connected to the exhaust gas exhaust connection pipe 21a between the valves 33a and 34a. The exhaust pipe 74a is not connected to other pipes, and the abatement processing unit 1
0 is independently connected. Similarly, the reaction system 9b and the exhaust gas treatment system 12 are connected to the exhaust gas exhaust connection pipes 18b and 21b.
The exhaust gas exhaust connection pipe 18b has two-stage valves 32b and 34b installed in series with respect to the exhaust gas flow, and the exhaust gas exhaust connection pipe 21b has a two-stage valve 33
b, 34b are installed in series with the exhaust gas flow. A valve 32 is provided in the exhaust gas exhaust connection pipe 18b.
An inert purge gas introduction pipe 71b is connected between the exhaust gas exhaust connection pipe 21b and the valves 33b, 34.
An exhaust pipe 74b is connected between b. The exhaust pipe 74b is not connected to other pipes, but is independently connected to the abatement unit 10.

In the present embodiment, a case will be described in which vapor phase growth is performed in the reactor 4a and dismantling is performed in the reactor 4b. When gas phase growth is being performed in the reaction furnace 4a, the source gas from the source gas supply sources 1a, 1b, 1c, and 1d passes through the valves 1h, 1i, 1j, and 1k and flows through the source gas supply line 13 through the carrier. The carrier gas merges with the carrier gas from the gas supply source 2 and is introduced into the reaction furnace 4a through the switching valve 30a and the valve 31a. The exhaust gas passes through the trap 16a, the valve 32a, the valve 33a, and the valve 34a (the valve 34b is closed), enters the exhaust line 19, and performs the detoxification processing unit 10, the exhaust pump 11
Is discharged through.

In order to disassemble the reactor 4b and replace the filter of the trap 16b, first, the operator enters the cabinet of the reaction system 9b and moves between the valve 31b and the reactor 4b, and between the valve 32b and the trap 16b. Remove the plumbing between. Therefore, the source gas flowing through the source supply line 13 is stopped by the switching valve 30b and the valve 31b. Exhaust gas from the reaction system 9a flowing through the exhaust line 19 is stopped by valves 32b, 33b, and 34b. During operations such as disassembly, replacement, and assembly, an inert purge gas is introduced from the inert purge gas introduction pipe 61b through the valve 62b through the valve 62b between the switching valve 30b and the valve 31b, and is removed from the valve 63b through the exhaust pipe 64b. Pour into Further, an inert purge gas is also introduced between the valve 32b, the valve 33b, and the valve 34b from the inert gas purge line 71b through the valve 72b, and flows into the exclusion processing unit 10 from the valve 73b through the exhaust pipe 74b. In this case, for example, the switching valve 30
Even if the valve b, the valve 31b, the valve 32b, the valve 33b, and the valve 34b leak, the leaked gas is removed together with the inert purge gas, so that the disassembling operation of the reaction furnace 4b can be performed safely. The inert gas purge does not hinder the vapor phase growth of the reaction system 9a.

(Embodiment 2) FIG. 2 is an explanatory diagram of another embodiment. In the present embodiment, the source gas supply connection pipe 17a,
This embodiment is the same as the above-described embodiment except that the connection structure of the exhaust gas exhaust connection pipes 18a and 18b is different. In the present embodiment, the source gas supply connection pipe 17a has a valve 30a,
An evacuation tube 81a is connected between 31a. Further, a vacuum exhaust pipe 91a is connected to the exhaust gas exhaust connection pipe 18a between the valves 32a and 34a. Evacuation tube 81a,
91a is connected to the vacuum pump 88 without being connected to other pipes, and further connected to the detoxification processing unit 10. Similarly, an evacuation tube 81b is connected to the source gas supply connection tube 17b between the valves 30b and 31b. Further, a vacuum exhaust pipe 91b is connected to the exhaust gas exhaust connection pipe 18b between the valves 32b and 34b. The vacuum evacuation tubes 81b and 91b are not connected to other pipes, but are connected to a vacuum pump 88 and further to the detoxification processing unit 10.

In this embodiment, a case will be described in which vapor phase growth is performed in the reactor 4a and dismantling is performed in the reactor 4b. During disassembly, replacement and assembly work, the valve 3 is switched from the vacuum pipe 81b to the valve 82b.
0b, the space between the valve 31b and the vacuum pump 88 is drawn, and the exhaust gas is flown into the detoxification processing unit 10. In addition, the evacuation tube 9
1b through valve 92b, valve 32b, valve 3
3b, the space between the valve 34b and the vacuum pump 88 is pulled, and the exhaust gas is flowed into the detoxification processing unit 10. Therefore, even if the switching valve 30b, the valve 31b, the valve 32b, the valve 33b, and the valve 34b leak, the leaked gas is removed by evacuation.
The dismantling work of b can be performed safely. This evacuation does not hinder the vapor phase growth of the reaction system 9a. The above embodiment is an example embodying the present invention, and does not limit the technical scope of the present invention.

[0016]

According to the present invention, while at least one of a plurality of reactors is in vapor phase growth, dismantling work of other reactors can be performed safely, and productivity is improved. There is an excellent effect.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of one embodiment of a vapor phase growth apparatus of the present invention.

FIG. 2 is an explanatory diagram of another embodiment of the present invention.

FIG. 3 is an explanatory view of a vapor phase growth apparatus.

FIG. 4 is an explanatory diagram of another vapor phase growth apparatus.

[Explanation of symbols]

1a, 1b, 1c, 1d Source gas supply source 1h, 1i, 1j, 1k Valve 2 Carrier gas supply source 3 Purge gas supply source 4a, 4b Reactor 5 Gas supply system 6 Substrate 7 Susceptor 8a, 8b Preparatory chamber 9a, 9b Reaction System 10 Detoxification unit 11 Exhaust pump 12 Exhaust gas treatment system 13 Source gas supply line 14a, 14b Carrier gas purge line 15 Vent line 16a, 16b Trap 17a, 17b Source gas supply connection pipe 18a, 18b, 21a, 21b Exhaust gas exhaust Connection pipe 19 Exhaust line 20a, 20b Raw material introduction line 30a-34a, 30b-34b Valve 62a, 63a, 62b, 63b Valve 72a, 73a, 72b, 73b Valve 82a, 82b Valve 92a, 92b Valve 61a, 61b Purge gas introduction pipe 64a , 4b, 74a, 74b exhaust pipe 71a, 71b purge line 81a, 81b, 91a, 91b evacuated tube 88 a vacuum pump

Claims (2)

[Claims] 1. A gas phase growth system comprising a source gas supply system, a plurality of reaction systems, and an exhaust gas treatment system, wherein the source gas supply system and the exhaust gas treatment system can be connected to the plurality of reaction systems. In the apparatus, the source gas supply system and the reaction system are connected by a source gas supply connection pipe having two-stage valves arranged in series, and the reaction system and the exhaust gas treatment system are arranged in series. An exhaust gas exhaust connection pipe having two-stage valves is connected, and a purge gas introduction pipe for introducing a purge gas and an independent exhaust pipe for exhausting are connected between the two-stage valves of each of the connection pipes. Vapor growth apparatus. 2. A gas phase growth system comprising a source gas supply system, a plurality of reaction systems, and an exhaust gas processing system, wherein the source gas supply system and the exhaust gas processing system are switchable to the plurality of reaction systems. In the apparatus, the source gas supply system and the reaction system are connected by a source gas supply connection pipe having two-stage valves arranged in series, and the reaction system and the exhaust gas treatment system are arranged in series. A vapor-phase growth apparatus characterized in that it is connected by an exhaust gas exhaust connection pipe having a two-stage valve, and between the two-stage valves of each of the connection pipes, a vacuum tube is connected to evacuate.