JPH10177034A - Capacitance type acceleration sensor and its manufacture - Google Patents
Capacitance type acceleration sensor and its manufactureInfo
- Publication number
- JPH10177034A JPH10177034A JP35407296A JP35407296A JPH10177034A JP H10177034 A JPH10177034 A JP H10177034A JP 35407296 A JP35407296 A JP 35407296A JP 35407296 A JP35407296 A JP 35407296A JP H10177034 A JPH10177034 A JP H10177034A
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- Prior art keywords
- substrate
- acceleration sensor
- hole
- joined
- flexible substrate
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、重力などの静加
速度および動加速度を3軸方向に分解して検出できる静
電容量型加速度センサの改良に係り、重錘体をダイシン
グにて形成することなく、可撓基板自体を重錘体となす
など生産性よく、かつセンサ自体を完全に機密にでき、
信頼の高い構成からなる静電容量型加速度センサとその
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a capacitance type acceleration sensor which can detect a static acceleration and a dynamic acceleration such as gravity in three axial directions, and to form a weight body by dicing. Without making the flexible substrate itself a weight body, and making the sensor itself completely confidential,
The present invention relates to a capacitive acceleration sensor having a highly reliable configuration and a method of manufacturing the same.
【0002】[0002]
【従来の技術】静電容量型加速度センサとして、例え
ば、特開平4−148833号、特開平4−33743
1号、特開平5−188079号には、固定基板と可撓
基板との各対向面に電極を着設して対向配置される静電
容量素子を複数設け、該基板面に平行なXY平面を設定
しこれと直交するZ軸のX,Y,Z軸3次元方向の加速
度の変化を、複数の静電容量素子間の静電容量変化に基
づき各X,Y,Z軸方向成分の検出を行う構成が提案さ
れている。2. Description of the Related Art For example, Japanese Patent Application Laid-Open Nos. 4-148833 and 4-33743 disclose capacitive acceleration sensors.
No. 1, Japanese Patent Application Laid-Open No. 5-188079 discloses a method in which a plurality of capacitance elements are provided opposite to each other by attaching electrodes to opposite surfaces of a fixed substrate and a flexible substrate, and an XY plane parallel to the substrate surface is provided. And a change in acceleration in a three-dimensional direction of the X, Y, and Z axes of the Z axis orthogonal to the X axis is detected based on a change in capacitance between a plurality of capacitance elements. Has been proposed.
【0003】例えば、図6の斜視図並びに図7の断面図
に示すように、可撓基板1を支持するビームを矩形の可
撓基板の中央部を残して4分割する如く可撓基板1中心
線上に十字型に配置する構成例では、台座ガラス2を介
して所定の間隔を設けて可撓基板1に平行に配置した固
定基板3と、可撓基板1との各対向面に上部ガラス基板
4を配置してその対向面にそれぞれ対向電極X1,X2,
Y3,Y4を着設して静電容量素子C1〜C4を形成する構
成からなり、また、可撓基板1の分割下面には適当な質
量を有するガラス重錘体5を設けてある。For example, as shown in the perspective view of FIG. 6 and the cross-sectional view of FIG. 7, the beam supporting the flexible substrate 1 is divided into four parts, excluding the central part of the rectangular flexible substrate. In the configuration example in which the substrate is arranged in a cross shape on a line, a fixed substrate 3 arranged in parallel with the flexible substrate 1 at a predetermined interval via the pedestal glass 2 and an upper glass substrate 4 are arranged, and opposing electrodes X 1 , X 2 ,
Capacitance elements C 1 to C 4 are formed by attaching Y 3 and Y 4 , and a glass weight 5 having an appropriate mass is provided on the divided lower surface of the flexible substrate 1. is there.
【0004】可撓基板1との各対向面に配置した上部ガ
ラス4は、対向面の電極より外部へリードするために、
上部ガラス4周辺に設けた切り欠き隙間より可撓基板1
上に電極取り出しパット6を設けてリード7を接続可能
にしてある。The upper glass 4 disposed on each of the opposing surfaces of the flexible substrate 1 leads to the outside from the electrode on the opposing surface.
The flexible substrate 1 is cut through a notch gap provided around the upper glass 4.
An electrode take-out pad 6 is provided on the upper side so that a lead 7 can be connected.
【0005】また、一般に静電容量型加速度センサは、
使用に際して雰囲気の影響を受け難くし、かつ静電容量
ギャップ部に異物が混入しないようにするために、比較
的高価になるがハーメチックシールパッケージ化して内
部のガスを制御したセンサチップとして利用されてい
た。In general, a capacitance type acceleration sensor is
In order to reduce the influence of the atmosphere during use and to prevent foreign matter from entering the capacitance gap, it is relatively expensive, but is used as a sensor chip with a hermetic seal package and controlled gas inside. Was.
【0006】[0006]
【発明が解決しようとする課題】しかし、上述した従来
の構成からなる静電容量型加速度センサは、可撓基板1
の分割下面にガラス重錘体5を設けるに際し、ガラスを
ダイシング加工して形成しており、図6に示すごとく、
側面部にダイシング加工溝ができるため、機密にはし難
いこと、また、ダイシング中にパーティクルが静電容量
ギャップ部に混入する恐れがあり、歩留りの低下にもつ
ながり、さらには前述のごとく、上部ガラス4周辺に設
けた切り欠きにより隙間が存在するため、パッケージ内
のパーティクルが静電容量ギャップ部に混入する恐れか
ら、信頼性に欠ける問題があった。However, the capacitance type acceleration sensor having the above-mentioned conventional configuration is not suitable for the flexible substrate 1.
When the glass weight body 5 is provided on the divided lower surface of, the glass is formed by dicing, and as shown in FIG.
Since dicing grooves are formed on the side surfaces, it is difficult to keep secrets.Particles may enter the capacitance gap during dicing, leading to a reduction in yield. Since there is a gap due to the notch provided around the glass 4, there is a problem that reliability is lacking because particles in the package may enter the capacitance gap.
【0007】可撓基板に対向する電極からのリードを電
極を露出させないで行う方法として、図8、図9に示す
構成があり、図8の場合、固定基板3上に可動部1aを
有する可撓基板1を設けて、さらに電極を設けたガラス
基板4を積層配置するが、このガラス基板4にテーパ面
を有する貫通孔を設けて、この貫通孔を挟む両面に蒸着
にて所定の対向電極4a,4bを形成することにより、
可動部1aに対向する対向電極4a,4bは先の貫通孔
を通して上面に露出しており、これに積層する導体キャ
ップ8にはんだなどによるリード部9を設ける構成から
なる。しかし、この貫通孔を介して両面に蒸着する電極
構成は、孔端を鋭角に折り曲げられるために蒸着被膜の
厚みが不均一になりやすく、導通不良などが懸念され、
さらに取出可能電極数が1個に限定されるという問題が
ある。FIGS. 8 and 9 show a method for conducting a lead from an electrode facing a flexible substrate without exposing the electrode. In the case of FIG. 8, the movable portion 1a may be provided on the fixed substrate 3. A flexible substrate 1 is provided, and a glass substrate 4 on which electrodes are further provided is laminated and arranged. A through hole having a tapered surface is provided in the glass substrate 4, and a predetermined counter electrode is formed on both surfaces sandwiching the through hole by vapor deposition. By forming 4a and 4b,
The opposing electrodes 4a and 4b opposing the movable portion 1a are exposed on the upper surface through the through-holes, and the conductor cap 8 laminated thereon is provided with a lead portion 9 made of solder or the like. However, the electrode configuration of vapor deposition on both sides through this through hole, the thickness of the deposited film tends to be uneven because the hole end is bent at an acute angle, there is a concern that poor conduction and the like,
Further, there is a problem that the number of electrodes that can be taken out is limited to one.
【0008】また、図9に示す構成の場合、固定基板3
上に可動部1aを有する可撓基板1を設けて、さらに電
極4a,4bを設けたガラス基板4を積層配置するが、
ガラス基板4に設けたテーパ面を有する貫通孔位置に電
極4a,4bを配置して外部より貫通孔内に導電ペース
トなどによるリード部9を設ける構成からなる。しか
し、量産に際して導電ペーストの塗布及びリード線の引
き回しに伴うコストアップの問題がある。Further, in the case of the configuration shown in FIG.
A flexible substrate 1 having a movable portion 1a is provided thereon, and a glass substrate 4 further provided with electrodes 4a and 4b is laminated and arranged.
The electrodes 4a and 4b are arranged at the positions of the through holes having a tapered surface provided on the glass substrate 4, and the lead portions 9 made of a conductive paste or the like are provided in the through holes from outside. However, in mass production, there is a problem that the cost is increased due to the application of the conductive paste and the routing of the lead wires.
【0009】この発明は、従来の静電容量型加速度セン
サの歩留りの低下や信頼性に欠ける問題を解消し、重錘
体をダイシングにて形成することなく生産性よく製造で
き、かつセンサ自体を完全に気密にでき、高価なハーメ
チックパッケージを用いることなく、安定的な導通が確
保できる複数の電極構造を有し、信頼の高い構成からな
る静電容量型加速度センサとその製造方法の提供を目的
としている。SUMMARY OF THE INVENTION The present invention solves the problems of the conventional capacitance type acceleration sensor having a reduced yield and lack of reliability, can be manufactured with high productivity without forming a weight body by dicing, and can manufacture the sensor itself. Provided is a capacitive acceleration sensor having a highly reliable configuration having a plurality of electrode structures capable of ensuring stable conduction without using an expensive hermetic package, which can be completely airtight, and a method of manufacturing the same. And
【0010】[0010]
【課題を解決するための手段】発明者は、可撓基板の可
動部下面に設ける重錘体をダイシングにて形成すること
なく生産性よく製造でき、かつセンサ自体を完全に機密
にできる構成について種々検討した結果、可撓基板のシ
リコン基板自体をフォトリソエッチングなどで重錘体を
一体に形成することで基板を積層して一体化して密閉す
ることに着目し、また、固定電極をガラス基板に設ける
貫通孔にて反対面に設けたシリコン基板と接続される構
成として、重錘体部分、電極のリード部分のいずれにも
外部雰囲気が侵入する隙間などを製造時に形成する必要
がないことを知見し、この発明を完成した。SUMMARY OF THE INVENTION The inventor of the present invention has proposed a configuration in which a weight provided on the lower surface of a movable portion of a flexible substrate can be manufactured with high productivity without forming by dicing, and the sensor itself can be completely confidential. As a result of various investigations, we focused on the fact that the silicon substrate itself as a flexible substrate was integrally formed with a weight body by photolithography etching and the substrates were laminated and integrated and hermetically sealed. As a configuration that is connected to the silicon substrate provided on the opposite surface by the provided through hole, it was found that there is no need to form a gap where the external atmosphere enters the weight body part and the lead part of the electrode at the time of manufacturing. Thus, the present invention has been completed.
【0011】すなわち、この発明は、ビームによる支持
構造を有する可撓基板の複数の可動部下面に重錘体を設
けて固定基板を対向配置し、該可動部上面に電極を対向
配置して静電容量ギャップ部を設けた静電容量型加速度
センサにおいて、半導体基板にパターンニングにより支
持構造を設けて形成する可動部の厚みを相対的に厚くし
た重錘体を有する可撓基板を固定基板上に接合し、所要
パターンで設けた円錐や角錐状の貫通孔を有するガラス
基板と半導体基板が貫通孔の円錐頂部側で接合された複
合板の両面に所要パターンで設けた電極同士が上記貫通
孔で半導体を介して導通した構成の複合板を前記可撓基
板の上面に電極を対向配置して接合され、内部が密閉さ
れたことを特徴とする静電容量型加速度センサである。That is, according to the present invention, a weight is provided on the lower surface of a plurality of movable portions of a flexible substrate having a support structure by a beam, and a fixed substrate is disposed opposite to the fixed substrate. In a capacitance type acceleration sensor provided with a capacitance gap portion, a flexible substrate having a weight body with a relatively thick movable portion formed by providing a supporting structure by patterning on a semiconductor substrate is provided on a fixed substrate. The electrodes provided in a required pattern on both surfaces of a composite board in which a glass substrate having a conical or pyramid-shaped through-hole provided in a required pattern and a semiconductor substrate are joined on the conical top side of the through-hole are connected to each other through the through-hole. Wherein a composite plate having a configuration in which the electrodes are electrically connected to each other via a semiconductor is joined to the upper surface of the flexible substrate by arranging electrodes facing each other, and the inside is hermetically sealed.
【0012】また、この発明は、半導体基板と所要パタ
ーンで設けた円錐や角錐状の貫通孔を有するガラス基板
とを該貫通孔の円錐頂部側で接合し、得られた複合板の
両面に所要パターンで設けた電極同士が上記貫通孔で半
導体基板を介して導通した構成のガラス複合板となす、
一方、半導体基板に乾式又は湿式のエッチング技術にて
ビームによる支持構造を設けて形成する可動部の厚みを
相対的に厚くして重錘体を付設した可撓基板となし、可
撓基板上にガラス複合板を積層接合し、これを固定基板
上に所要雰囲気中で接合して一体化し、その後、最上面
の電極層及び半導体基板に所要パターンで電気的絶縁溝
を設け、さらに所要のチップに切断分離することを特徴
とする静電容量型加速度センサの製造方法である。Further, the present invention provides a method for joining a semiconductor substrate and a glass substrate having a conical or pyramid-shaped through hole provided in a required pattern on the conical top side of the through hole, and forming a required part on both surfaces of the obtained composite plate. The electrodes provided in a pattern form a glass composite plate having a configuration in which the electrodes are electrically connected to each other through the semiconductor substrate in the through holes.
On the other hand, the semiconductor substrate is provided with a beam-supporting structure by a dry or wet etching technique to form a flexible substrate having a relatively thick movable portion formed by attaching a weight to the movable portion. The glass composite plate is laminated and bonded, and bonded and integrated on a fixed substrate in a required atmosphere, and thereafter, an electrical insulating groove is provided in a required pattern on the uppermost electrode layer and the semiconductor substrate, and further, on a required chip. This is a method for manufacturing a capacitance type acceleration sensor characterized by cutting and separating.
【0013】[0013]
【発明の実施の形態】以下に、この発明による静電容量
型加速度センサとその製造方法について、詳述する。図
1はこの発明による静電容量型加速度センサの縦断説明
図、図2は他の構成を示す縦断説明図、図3A〜Dはガ
ラス複合板の組立順序を示す縦断説明図、図4は可撓基
板の縦断説明図、図5は固定基板の縦断説明図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a capacitive acceleration sensor according to the present invention and a method for manufacturing the same will be described in detail. 1 is a longitudinal sectional view of a capacitance type acceleration sensor according to the present invention, FIG. 2 is a longitudinal sectional view showing another configuration, FIGS. 3A to 3D are longitudinal sectional views showing an assembling sequence of a glass composite plate, and FIG. FIG. 5 is a vertical sectional view of the flexible substrate, and FIG. 5 is a vertical sectional view of the fixed substrate.
【0014】図1のこの発明による静電容量型加速度セ
ンサは、固定基板10上に基板厚みを利用して形成した
重錘体12を付設した可撓基板11、対向電極14,1
5を設けたガラス基板13と半導体基板16からなるガ
ラス複合板17を順次積層した構成からなる。The capacitance type acceleration sensor according to the present invention shown in FIG. 1 has a flexible substrate 11 provided with a weight 12 formed on a fixed substrate 10 using the thickness of the substrate, and opposing electrodes 14 and 1.
5 and a glass composite plate 17 comprising a semiconductor substrate 16 are sequentially laminated.
【0015】製造方法の一例を説明すると、図3のBに
示すごとくサンドブラスト加工などにて所要パターンで
設けた円錐や角錐状の貫通孔を有するガラス基板13と
半導体基板16を、Cに示すごとく該貫通孔の円錐頂部
側で陽極接合し、次にDに示すごとく半導体基板16の
上面の全面に外部電極18、ガラス基板13には所要パ
ターン電極14,15を設ける。An example of the manufacturing method will be described. As shown in FIG. 3B, a glass substrate 13 and a semiconductor substrate 16 having a conical or pyramid-shaped through hole provided in a required pattern by sandblasting or the like are formed as shown in FIG. Anode bonding is performed on the conical top side of the through hole, and then external electrodes 18 are provided on the entire upper surface of the semiconductor substrate 16 and required pattern electrodes 14 and 15 are provided on the glass substrate 13 as shown in D.
【0016】低抵抗のドープドシリコン基板などの半導
体基板16の上面全面には、Al,Au,Cuなどの全
面メタル形成、蒸着やめっき法により外部電極18を設
けることができ、下面のガラス基板13にはメタルマス
ク等を用いた蒸着パターニング等の手法により形成する
ことができる。An external electrode 18 can be provided on the entire upper surface of a semiconductor substrate 16 such as a low-resistance doped silicon substrate by forming a metal such as Al, Au, or Cu, by vapor deposition or plating. 13 can be formed by a technique such as vapor deposition patterning using a metal mask or the like.
【0017】図4に示すごとく、別途、シリコン基板な
どの半導体基板に乾式又は湿式のエッチング技術にてビ
ーム11aによる支持構造を設けて形成する可動部11
bの厚みを相対的に厚くして重錘体12を設けた可撓基
板11を作製する。As shown in FIG. 4, a movable portion 11 formed separately by providing a support structure with a beam 11a on a semiconductor substrate such as a silicon substrate by a dry or wet etching technique.
The flexible substrate 11 provided with the weight body 12 by relatively increasing the thickness b is manufactured.
【0018】可撓基板11上に前記のガラス複合板17
の対向電極14,15を対向させて積層し、陽極接合す
る。図5に示すごとくいわゆるザグリを形成した固定基
板10上に、この可撓基板11を積層し陽極接合する
が、この際、接合時の雰囲気調整を行うことにより、積
層体内部のガスを制御しておくことができる。The above-mentioned glass composite plate 17 is placed on the flexible substrate 11.
Are laminated so as to face each other, and anodically bonded. As shown in FIG. 5, the flexible substrate 11 is laminated on the fixed substrate 10 on which a so-called counterbore is formed, and anodically bonded. At this time, the atmosphere in the laminated body is controlled by adjusting the atmosphere during the bonding. Can be kept.
【0019】一体化された積層体の上面の電極18およ
び半導体基板16の厚みに相当する深さで、例えばダイ
シングソーなどにて、図1に示すごとく絶縁溝を所要パ
ターンで形成して、対向電極14,15と接続されてい
る半導体基板16部分を電気的に分離して、分離された
半導体基板16部分に設けられた上面の外部電極18よ
り対向電極14,15との導通を確保する。At a depth corresponding to the thickness of the electrode 18 and the semiconductor substrate 16 on the upper surface of the integrated laminate, insulating grooves are formed in a required pattern as shown in FIG. The portion of the semiconductor substrate 16 connected to the electrodes 14 and 15 is electrically separated, and conduction from the external electrodes 18 on the upper surface provided on the separated semiconductor substrate 16 to the opposing electrodes 14 and 15 is ensured.
【0020】図示の構成はセンサ1個分を示している
が、製造に際しては所要寸法のガラス基板や半導体基板
に多数個分のパターニングを行い、組立て一体化後に所
要のチップ、すなわち図1のチップに切断分離すること
により、静電容量型加速度センサを得ることができる。Although the configuration shown in the figure shows one sensor, a large number of patterns are formed on a glass substrate or a semiconductor substrate of a required size during manufacture, and a required chip after assembly and integration, that is, the chip shown in FIG. By cutting and separating into two, a capacitive acceleration sensor can be obtained.
【0021】この発明において、静電容量型加速度セン
サにおける可撓基板11は、図1にごとく、1枚の半導
体基板より作製することができる。さらに、図2に示す
ごとく、2枚の半導体基板を接合した基板よりエッチン
グ技術にてビーム11aによる支持構造を設けて形成す
るに際し、基板1枚分の厚みを重錘体12とすることも
可能である。In the present invention, the flexible substrate 11 in the capacitance type acceleration sensor can be manufactured from one semiconductor substrate as shown in FIG. Further, as shown in FIG. 2, when a support structure using a beam 11a is provided by an etching technique from a substrate obtained by bonding two semiconductor substrates, the weight of one substrate can be used as the weight body 12. It is.
【0022】[0022]
【実施例】図1の構成からなる静電容量型加速度センサ
を作製するに際して、パイレックスガラスにフォトリソ
エッチングを用いて凹部を形成した固定基板10に、基
板厚みを利用して重錘体12を付設した可撓基板11
と、上面に外部電極を構成するアルミニウム電極を蒸着
した半導体基板16と陽極接合により対向電極14,1
5を設けたガラス基板13を、それぞれ陽極接合技術を
使用して、この発明の製造方法により作製した。なお、
一体接合時の雰囲気は、不活性ガスであった。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In manufacturing a capacitance type acceleration sensor having the structure shown in FIG. 1, a weight body 12 is attached to a fixed substrate 10 having a concave portion formed by photolithography on Pyrex glass by utilizing the thickness of the substrate. Flexible substrate 11
And a semiconductor substrate 16 on which an aluminum electrode constituting an external electrode is vapor-deposited on the upper surface, and the opposite electrodes 14, 1 by anodic bonding.
The glass substrate 13 provided with No. 5 was manufactured by the manufacturing method of the present invention using the anodic bonding technology. In addition,
The atmosphere during the integral joining was an inert gas.
【0023】基板寸法が4インチのものから得られた多
数の静電容量型加速度センサは、歩留りが図6の従来の
ものに比較して比較的に向上し、さらに、安価なプラス
チックスパッケージにて封着したが、高温多湿の雰囲気
下及び低温条件使用試験において、ハーメッチックシー
ル品と同等の性能が得られた。A large number of capacitive acceleration sensors having a substrate size of 4 inches have a relatively improved yield as compared with the conventional one shown in FIG. However, in a high-temperature and high-humidity atmosphere and a low-temperature condition use test, performance equivalent to a hermetic seal product was obtained.
【0024】[0024]
【発明の効果】この発明は、静電容量型加速度センサの
最重要部であるビームによる支持構造を設けて形成され
る可動部に重錘体を設けるに際し、パーティクルが発生
するダイシングにて形成することなく、エッチング技術
にて基板厚みを利用して重錘体を形成するため生産性よ
く製造でき、所要のパターニングにより作製する基板を
順次積層、接合する構成であるためセンサ自体を完全に
気密にでき、また、外部電極を設けた半導体基板と接合
されたガラス基板に設けた貫通孔にて露出する半導体基
板面と貫通孔に電極を蒸着にて形成するため、安定的な
導通が確保できる電極構造を有しており、この発明によ
る静電容量型加速度センサは、従来の構造のセンサの問
題点であった、製造歩留りの低下や信頼性に欠ける問題
を解決できる。According to the present invention, when the weight is provided on the movable portion formed by providing the beam supporting structure, which is the most important portion of the capacitive acceleration sensor, the weight is formed by dicing in which particles are generated. Without using the etching technology, the weight body is formed using the thickness of the substrate, so that it can be manufactured with high productivity. The substrate itself is sequentially laminated and joined by the required patterning, so that the sensor itself is completely airtight. In addition, since the electrodes are formed by vapor deposition on the semiconductor substrate surface exposed in the through holes provided in the glass substrate bonded to the semiconductor substrate provided with the external electrodes and the through holes, stable conduction can be ensured. The capacitance type acceleration sensor according to the present invention can solve the problems of the sensor having the conventional structure, such as a decrease in manufacturing yield and a lack of reliability.
【図1】この発明による静電容量型加速度センサの縦断
説明図である。FIG. 1 is an explanatory longitudinal sectional view of a capacitance type acceleration sensor according to the present invention.
【図2】この発明による静電容量型加速度センサの他の
構成を示す縦断説明図である。FIG. 2 is a longitudinal sectional view showing another configuration of the capacitance type acceleration sensor according to the present invention.
【図3】A〜Dはこの発明によるガラス複合板の組立順
序を示す縦断説明図である。FIGS. 3A to 3D are longitudinal sectional views showing an assembling sequence of the glass composite plate according to the present invention.
【図4】この発明による可撓基板の縦断説明図である。FIG. 4 is an explanatory longitudinal sectional view of a flexible substrate according to the present invention.
【図5】この発明による固定基板の縦断説明図である。FIG. 5 is an explanatory longitudinal sectional view of a fixed substrate according to the present invention.
【図6】従来の静電容量型加速度センサの斜視説明図で
ある。FIG. 6 is an explanatory perspective view of a conventional capacitance type acceleration sensor.
【図7】図6の静電容量型加速度センサの縦断説明図で
ある。FIG. 7 is an explanatory longitudinal sectional view of the capacitance type acceleration sensor of FIG. 6;
【図8】従来の他の静電容量型加速度センサの縦断説明
図である。FIG. 8 is an explanatory longitudinal sectional view of another conventional capacitance type acceleration sensor.
【図9】従来の他の静電容量型加速度センサの縦断説明
図である。FIG. 9 is an explanatory longitudinal sectional view of another conventional capacitive acceleration sensor.
1 可撓基板 1a 可動部 2 台座ガラス 3 固定基板 4 ガラス基板 4a,4b 対向電極 5 ガラス重錘体 6 電極取り出しパット 7 リード 8 導体キャップ 9 リード部 X1,X2,Y3,Y4 対向電極 10 固定基板 11 可撓基板 11a ビーム 11b 可動部 12 重錘体 13 ガラス基板 14,15 対向電極 16 半導体基板 17 ガラス複合板 18 外部電極1 the flexible substrate 1a movable portion 2 pedestal glass 3 fixed substrate 4 a glass substrate 4a, pad 7 leads 8 conductor cap 9 leads X 1 extraction 4b counter electrode 5 glass weight body 6 electrodes, X 2, Y 3, Y 4 facing Electrode 10 Fixed substrate 11 Flexible substrate 11a Beam 11b Movable part 12 Weight 13 Glass substrate 14, 15 Counter electrode 16 Semiconductor substrate 17 Glass composite plate 18 External electrode
Claims (2)
の複数の可動部下面に重錘体を設けて固定基板を対向配
置し、該可動部上面に電極を対向配置して静電容量ギャ
ップ部を設けた静電容量型加速度センサにおいて、半導
体基板にパターンニングにより支持構造を設けて形成す
る可動部の厚みを相対的に厚くした重錘体を有する可撓
基板を固定基板上に接合し、所要パターンで設けた円錐
や角錐状の貫通孔を有するガラス基板と半導体基板が貫
通孔の円錐頂部側で接合された複合板の両面に所要パタ
ーンで設けた電極同士が上記貫通孔で半導体を介して導
通した構成の複合板を前記可撓基板の上面に電極を対向
配置して接合され、内部が密閉された静電容量型加速度
センサ。1. A flexible substrate having a support structure by a beam, a weight body is provided on the lower surface of a plurality of movable parts, a fixed substrate is arranged opposite thereto, and an electrode is arranged opposite to an upper surface of the movable part to form a capacitance gap portion. In the capacitance type acceleration sensor provided with, a flexible substrate having a weight body with a relatively thick movable portion formed by providing a support structure by patterning on a semiconductor substrate is joined to a fixed substrate, The electrodes provided in a required pattern on both sides of a composite board in which a glass substrate having a conical or pyramid-shaped through hole provided in a required pattern and a semiconductor substrate are joined on the conical top side of the through hole are connected to each other through a semiconductor in the through hole. A capacitive acceleration sensor in which a composite plate having a conductive configuration is joined to the upper surface of the flexible substrate by arranging electrodes facing each other and hermetically sealed.
や角錐状の貫通孔を有するガラス基板とを該貫通孔の円
錐頂部側で接合し、得られた複合板の両面に所要パター
ンで設けた電極同士が上記貫通孔で半導体を介して導通
した構成のガラス複合板となす、一方、半導体基板に乾
式又は湿式のエッチング技術にてビームによる支持構造
を設けて形成する可動部の厚みを相対的に厚くして重錘
体を付設した可撓基板となし、可撓基板上にガラス複合
板を積層接合し、これを固定基板上に所要雰囲気中で接
合して一体化し、その後、最上面の電極層及び半導体基
板に所要パターンで絶縁溝を設け、さらに所要のチップ
に切断分離する静電容量型加速度センサの製造方法。2. A semiconductor substrate and a glass substrate having a conical or pyramid-shaped through hole provided in a required pattern are joined at the conical top side of the through hole, and provided on both surfaces of the obtained composite plate in a required pattern. The thickness of the movable part formed by providing a support structure with a beam by a dry or wet etching technique on a semiconductor substrate is made relative to a glass composite plate in which electrodes are electrically connected to each other via a semiconductor in the through hole. A flexible substrate with a weight body attached thereto, and a glass composite plate laminated and joined on the flexible substrate, which is joined and integrated on a fixed substrate in a required atmosphere, and then the uppermost surface A method for manufacturing a capacitive acceleration sensor in which an insulating groove is provided in a required pattern on an electrode layer and a semiconductor substrate, and further cut and separated into required chips.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35407296A JPH10177034A (en) | 1996-12-17 | 1996-12-17 | Capacitance type acceleration sensor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35407296A JPH10177034A (en) | 1996-12-17 | 1996-12-17 | Capacitance type acceleration sensor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10177034A true JPH10177034A (en) | 1998-06-30 |
Family
ID=18435110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35407296A Pending JPH10177034A (en) | 1996-12-17 | 1996-12-17 | Capacitance type acceleration sensor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10177034A (en) |
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---|---|---|---|---|
WO2007061062A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Method for manufacturing wafer level package structure |
WO2007061059A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
WO2007061047A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and method for manufacturing same |
WO2007061056A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
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WO2008111291A1 (en) | 2007-03-09 | 2008-09-18 | Panasonic Corporation | Acceleration sensor |
CN100458449C (en) * | 2005-04-15 | 2009-02-04 | 威海双丰物探设备股份有限公司 | Capacitor MEMS acceleration sensor |
KR100928761B1 (en) | 2003-05-22 | 2009-11-25 | 세이코 인스트루 가부시키가이샤 | Capacitance dynamic mass sensor and manufacturing method thereof |
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1996
- 1996-12-17 JP JP35407296A patent/JPH10177034A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100928761B1 (en) | 2003-05-22 | 2009-11-25 | 세이코 인스트루 가부시키가이샤 | Capacitance dynamic mass sensor and manufacturing method thereof |
CN100458449C (en) * | 2005-04-15 | 2009-02-04 | 威海双丰物探设备股份有限公司 | Capacitor MEMS acceleration sensor |
WO2007061056A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
WO2007061062A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Method for manufacturing wafer level package structure |
WO2007061047A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and method for manufacturing same |
WO2007061059A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
US7674638B2 (en) | 2005-11-25 | 2010-03-09 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
US8026594B2 (en) | 2005-11-25 | 2011-09-27 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
US8067769B2 (en) * | 2005-11-25 | 2011-11-29 | Panasonic Electric Works Co., Ltd. | Wafer level package structure, and sensor device obtained from the same package structure |
US8080869B2 (en) | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
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WO2008111291A1 (en) | 2007-03-09 | 2008-09-18 | Panasonic Corporation | Acceleration sensor |
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