JPH10144736A - Bonding agent sheet for semiconductor device, semiconductor integrated circuit connection substrate using that and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a new bonding agent composition for a semiconductor device, which is superior in laminating processability, adhesive force and durability, a semiconductor integrated circuit connection substrate using that composition and a semiconductor device from an industrial viewpoint and to raise the economical efficiency and reliability of the high-density mounting semiconductor integrated circuit connection substrate and the semiconductor substrate, which are based on an easy processability of the substrate and the device. SOLUTION: In a substrate for semiconductor integrated circuit connection, which has at least one layer of more of insulator layers 3 and wiring board layers 4 consisting of a wiring pattern and at least one layer or more of layers 7, which are not formed with a conductor pattern, and bonding agent layers 6, when the tack strengths of both surfaces of a bonding agent sheet forming the layers 6 are respectively assumed P1 and P2 (P1 >P2 ), the P2 and P1 are set on the condition of 0<=P2 /P1 <=0.9 and moreover, the P1 is set on the condition of 2Ncm<-1> <=P1 <=50Ncm<-1> .

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive sheet constituting a substrate (interposer) for connecting a semiconductor integrated circuit used when mounting and packaging a semiconductor integrated circuit, and a semiconductor integrated circuit using the same. The present invention relates to a connection substrate and a semiconductor device. More specifically, a wiring board layer composed of an insulator layer and a conductor pattern constituting a substrate for connecting a semiconductor integrated circuit used in a ball grid array (BGA) system and a layer on which a conductor pattern such as a metal reinforcing plate is not formed. The present invention relates to an adhesive sheet having excellent bonding workability for bonding between layers and having a function of relieving thermal stress generated between layers due to a temperature difference, a semiconductor integrated circuit connecting substrate and a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor integrated circuit (IC) package, a dual in-line package (DIP),
Package forms such as a small outline package (SOP) and a quad flat package (QFP) have been used. However, with the increase in the number of pins of the IC and the miniaturization of the package, the limit of the QFP that can increase the number of pins is approaching its limit. This is due to the difficulty in maintaining the flatness of the leads and the difficulty in obtaining solder printing accuracy on the printed circuit board, particularly when mounting on a printed circuit board.
Therefore, in recent years, the BGA method has been put to practical use as a means for increasing the number of pins and reducing the size.

FIG. 1 shows an example of the BGA system. The BGA method is characterized in that solder balls almost corresponding to the number of pins of an IC are provided on a grid (grid array) as external connection portions of a semiconductor integrated circuit connection substrate to which the IC is connected. The connection to the printed circuit board is performed by placing the solder ball surface on the conductor pattern of the printed circuit board on which the solder is already printed so as to match the conductor pattern, and melting the solder by reflow. The greatest feature is that since the surface of the substrate for connecting a semiconductor integrated circuit can be used, more terminals can be arranged in a smaller space as compared with a package such as QFP which can use only peripheral sides. A chip scale package (CSP) has further advanced this miniaturization function.
Due to their similarity, they may be referred to as micro BGA (μ-BGA). The present invention relates to a CS having these BGA structures.
Applicable to P.

On the other hand, the BGA method has the following problems. (A) maintaining the flatness of the solder ball surface; (b) improving the heat dissipation; (c) mitigating the thermal stress applied to the solder ball during temperature cycling and reflow; (d) higher due to the large number of reflows Requires reflow resistance. As a method of improving these, a method of laminating a material such as a metal plate for reinforcement, heat radiation, and electromagnetic shielding on a substrate for connecting a semiconductor integrated circuit is generally used. In particular, the insulating substrate layer for connecting the IC and the wiring board layer composed of the conductor pattern have a TA
This is important when a B tape or a flexible printed circuit board is used. For this reason, the substrate for connecting a semiconductor integrated circuit includes an insulator layer 1 for connecting an IC as illustrated in FIG.
1 and a wiring board layer composed of the conductor pattern 13, a layer 15 on which no conductor pattern is formed, such as a reinforcing plate, a heat sink, a shield plate, etc., and at least one adhesive layer 14 for laminating these layers. It has a configuration. From the above points, the following points can be cited as characteristics required of the adhesive layer 14. (A) Reflow conditions (23
(0 ° C. or higher), high adhesive strength that does not peel off, (b) moderate elastic modulus and wire for relaxing thermal stress between dissimilar materials such as a wiring board layer and a reinforcing plate during a temperature cycle or reflow. Expansion coefficient characteristics, (c) Easy workability for low-temperature, short-time bonding and heating cure, (d)
Insulation when laminated on wiring.

[0005] From such a viewpoint, conventionally, a thermoplastic resin or silicone elastomer (Japanese Patent Publication No.
-50448) and the like.

[0006]

However, among the above-mentioned characteristics, it has been difficult to achieve a balance between an appropriate elastic modulus and a linear expansion coefficient characteristic, especially for a high adhesive force.
That is, in the conventional adhesive composition, when the adhesive strength is improved, the elastic modulus at a high temperature is reduced, and thus, a sufficient property is not necessarily obtained as a whole. In this regard, the present inventors, by skillfully combining the thermoplastic resin and the thermosetting resin first, furthermore, by appropriately controlling the temperature dependence of the elastic modulus and linear expansion coefficient, the adhesive force and An adhesive composition excellent in thermal stress relaxation effect was proposed.

The above-mentioned substrate for connecting a semiconductor integrated circuit is prepared by preparing an intermediate product in which an adhesive layer is formed on one of a wiring board layer and a layer on which no conductor pattern is formed, and a process before connecting the IC. In general, the adhesive layer is formed by bonding a wiring board layer and a layer on which no conductor pattern is formed, and curing and curing the adhesive layer. Further, in this case, since a layer on which a conductor pattern is not formed usually emphasizes planarity, a relatively thick metal plate is often used, and is supplied as a continuous tape using a TAB tape or a flexible printed circuit board. It is difficult to continuously and continuously perform the step of bonding with the wiring board layer. Therefore, it is more common that these are punched into a sheet having a size close to the final semiconductor device (BGA package) and bonded to a continuous tape-shaped wiring board layer. That is, the following steps are exemplified.

(1) A coating solution prepared by dissolving an adhesive composition in a solvent is cast on a film, coated and dried to prepare a semi-cured adhesive sheet. This is heated and pressed to either a wiring board layer (long) or a layer on which no conductor pattern is formed (sheet-by-sheet) to form a bonding adhesive layer. These are further heated and pressed to be bonded to each other to form a substrate for connecting a semiconductor integrated circuit.

(2) The adhesive composition is melted at an appropriate temperature, cast and applied on a film to form a semi-cured adhesive sheet. The following is the same as (1).

(3) A coating solution obtained by dissolving the adhesive composition in a solvent is directly cast on a wiring board layer or a layer (sheet-like sheet) on which no conductor pattern is formed, coated, dried and semi-cured. To form an adhesive layer. The following is the same as (1).

(4) The adhesive composition is melted at an appropriate temperature, cast and applied directly to either a wiring board layer or a layer (sheet-like sheet) on which no conductor pattern is formed, and adhered in a semi-cured state. Form an agent layer. The following is the same as (1).

Among them, the method of interposing the adhesive sheet of (1) or (2) has a higher degree of freedom in the processing process and is more advantageous than the method of forming the direct adhesive layer of (3) or (4). Is the way. That is, in order to directly form the adhesive layer, it is necessary to place the adhesive layer in a high-temperature environment such as heating and drying, and it is unavoidable that a stress is applied during coating. Therefore, there is a difficulty in targeting relatively fine and brittle wiring board layers. On the other hand, in the case of a layer where a conductor pattern is not formed, such a problem is small, but the length of continuous coating is limited because a metal plate is usually used for a layer where a conductor pattern is not formed. And workability is difficult.

As described in the above (1), the method of using the adhesive sheet is as follows: (a) bonding to either the wiring board layer or the layer where the conductor pattern is not formed by heating and pressing;
A substrate for connecting a semiconductor integrated circuit is formed through a step of preparing an intermediate product and a step of (a) bonding the other layer and the intermediate product by heating and pressing. Here, in the step (A), since a flexible adhesive sheet is continuously bonded, a weak adhesive force of the adhesive sheet is advantageous for workability, and there is little mixing of bubbles. On the other hand, in the step (a), a layer (metal plate) on which a single-sheet conductor pattern is not formed is sequentially bonded to a continuous tape-shaped wiring substrate layer. Peeling is small and preferable. In addition, if fixed by adhesion, the temperature and pressure during bonding can be reduced, and the influence on the wiring board layer is small.

However, the conventional adhesive sheet cannot be applied or is not suitable for the above-mentioned process because the adhesive strength on both sides is the same. For example, an adhesive sheet made of a thermoplastic resin has almost no tackiness,
Although it is advantageous in the step (A), the step (A) requires heating and pressurizing beyond the softening point of the resin. On the other hand, the adhesive sheet made of a thermosetting resin had a high tackiness, and the workability was reduced in the step (A).

The present invention solves the above problems and provides a novel semiconductor excellent in bonding workability at the time of preparing a substrate for connecting a semiconductor integrated circuit while maintaining excellent adhesive strength, insulation reliability and durability. An object of the present invention is to provide a device adhesive sheet, a substrate for connecting a semiconductor integrated circuit using the same, and a semiconductor device.

[0016]

Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies on the adhesive properties of the adhesive composition constituting the adhesive sheet for semiconductor devices and the structure of the adhesive sheet. Substrate for connecting semiconductor integrated circuits with excellent bonding processability while maintaining adhesive force and thermal stress relaxation effect by skillfully combining thermoplastic resin and thermosetting resin and controlling adhesive force appropriately. It has been found that an adhesive sheet for a semiconductor device suitable for the present invention can be obtained, which has led to the present invention.

That is, the present invention provides a semiconductor having at least one layer of (A) a wiring board layer composed of an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer. (C) An adhesive sheet for a semiconductor device forming an adhesive layer of an integrated circuit substrate, wherein the adhesive forces on both surfaces of the adhesive sheet are P ₁ and P ₂ (P ₁ > P ₂ ), respectively. 0 ≦ P ₂ / P
Is _{^{1 ≦ P 1 ≦ 50 N cm}} -1 adhesive sheet and semiconductor device characterized in that it is a semiconductor integrated circuit connection board and a semiconductor device using the same ^- ₁ ≦ 0.9, and 2 N cm .

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The substrate for connecting a semiconductor integrated circuit according to the present invention is for connecting a semiconductor integrated circuit (bare chip) which has been separated after a device is formed on a semiconductor substrate such as silicon. A) a wiring board layer composed of an insulator layer and a conductor pattern, (B) a layer having no conductor pattern formed thereon, and (C) an adhesive layer composed of the adhesive sheet of the present invention each having at least one or more layers. For example, the shape, material, and manufacturing method are not particularly limited. Therefore, the most basic structure is A / C / B, but this also includes a multilayer structure such as A / C / B / C / B.

(A) is a layer having a conductor pattern for connecting the electrode pads of the bare chip to the outside of the package (such as a printed circuit board). The conductor pattern is formed on one or both sides of the insulator layer. is there. The insulator layer referred to here is made of a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or a composite material such as an epoxy resin impregnated glass cloth, and has a thickness of 10%. ~ 125μ
An insulating film having a flexibility of m, a ceramic substrate of alumina, zirconia, soda glass, quartz glass, or the like is suitable, and a plurality of layers selected from these may be laminated and used. If necessary, the insulator layer may be subjected to surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment. The formation of the conductor pattern is generally performed by either the subtractive method or the additive method, but any of them may be used in the present invention. In the subtractive method, a metal plate such as a copper foil is adhered to the insulator layer with an insulating adhesive (the adhesive sheet of the present invention can also be used), or a precursor of the insulator layer is attached to the metal plate. A material formed by stacking bodies and forming an insulator layer by heat treatment or the like is patterned by etching by chemical treatment. Specific examples of the material here include copper-clad materials for rigid or flexible printed circuit boards and TAB.
An example is a tape. On the other hand, in the additive method, a conductor pattern is directly formed on the insulator layer by electroless plating, electrolytic plating, sputtering, or the like. In any case, the formed conductor may be plated with a metal having high corrosion resistance to prevent corrosion. Via holes may be formed in the wiring board layer (A) formed as described above, if necessary, and the conductor patterns formed on both sides by plating may be connected by plating.

(B) is a uniform layer substantially independent of (A) or (C), which reinforces and stabilizes the dimensions of the substrate for connecting the semiconductor integrated circuit, electromagnetically shields the IC from the outside, Of the semiconductor integrated circuit connection substrate, imparting discriminability based on the shape of the semiconductor integrated circuit connection substrate, and the like. Therefore, the shape may be not only a layer shape but also a three-dimensional shape having a fin structure for heat dissipation. In addition, as long as it has the above function, it may be an insulator or a conductor, the material is not particularly limited, and the metal is copper,
Iron, aluminum, gold, silver, nickel, titanium, etc., inorganic materials such as alumina, zirconia, soda glass, quartz glass, carbon, etc., and organic materials such as polyimide, polyamide, polyester, vinyl, phenol, epoxy Polymer materials such as a system are exemplified. Further, a composite material obtained by combining these can also be used. For example, those having a shape in which thin metal plating is formed on a polyimide film, those having conductivity by kneading carbon into a polymer, and those having a metal plate coated with an organic insulating polymer can be exemplified. Further, it is not limited that various surface treatments are performed in the same manner as in the above (A).

(C) is an adhesive layer mainly used for bonding (A) and (B). However, the use of (A) or (B) for bonding to another member (for example, an IC or a printed board) is not limited at all. This adhesive layer is usually laminated in a semi-cured state on the semiconductor integrated circuit connection substrate, and before or after lamination, 30 to 20 times.
The degree of curing can be adjusted by performing a pre-curing reaction at a temperature of 0 ° C. for an appropriate time. This adhesive layer is formed from the semiconductor device adhesive sheet of the present invention, and after heat curing,
In the temperature range of −50 to 150 ° C., the storage elastic modulus is preferably 0.1 to 10000 MPa, more preferably 1 to 5000 MPa, and the coefficient of linear expansion is preferably 0.1 × 10 ^{−5 to} 500 × 10 ^{−. The} temperature is ⁵ ° C. ⁻¹ , more preferably ^{1 to} 300 × 10 ⁻⁵ ° C. ⁻¹ . Storage modulus is 0.
When the pressure is less than 1 MPa, the strength of the adhesive is low, and the substrate for connecting the semiconductor integrated circuit is deformed during use of the device on which the semiconductor device is mounted, and the workability in the processing step is not preferable. If it exceeds 10,000 MPa, the effect of relieving thermal stress is small, and warpage of the substrate for connecting a semiconductor integrated circuit, peeling between layers, and solder ball cracks are not preferable. Linear expansion coefficient is 0.1 × 10 ^-5
When the temperature is ^lower than ⁻¹ ° C., the effect of relaxing the thermal stress is small, which is not preferable. If it exceeds 500 × 10 ⁻⁵ ° C. ⁻¹ , the adhesive itself causes thermal stress, which is even more undesirable.

The thickness of the adhesive layer can be appropriately selected depending on the relationship between the elastic modulus and the coefficient of linear expansion, but is preferably 2 to 500 μm, more preferably 20 to 200 μm.

The adhesive sheet of the present invention is a sheet consisting essentially of an adhesive layer having no film, sheet, plate or the like as a base material, and has an adhesive force on both sides of P ₁ and P ₂ respectively. When (P ₁ > P ₂ ), preferably 0 ≦ P ₂ / P ₁ ≦ 0.9, more preferably 0 ≦ P ₂ / P
₁ ≦ 0.5. When 0.9 <P ₂ / P ₁ ≦ 1,
Either the first bonding step (A) or the next bonding step (A) described above is not preferable because workability and yield are reduced. P ₁ is preferably 2 N c
m ⁻¹ ≦ P ₁ ≦ 50 Ncm ⁻¹ , more preferably 5 Ncm ⁻¹ ≦
P ₁ ≦ 20 N cm ^{- 1.} At 2 N cm ^-1 or less, peeling occurs due to a temporary decrease in adhesive strength before curing by heating after bonding in the step (a). This is more remarkable when the wiring board layer formed as a continuous tape using a TAB tape or a flexible printed board is wound around a reel.
On the other hand, if it exceeds 50 N cm ⁻¹ , the peeling property at the time of repair of defective bonding is not preferable. It is advantageous that P ₂ is small, and the range of 0 to 5 N cm ⁻¹ is preferable. P ₁ and the wiring board layers either side of the P _2, although either adhere to layers not conductive pattern is formed (metal plate) are not limited, P ₂ in the step (A), of (b) In the process P
_It is preferred to use _one side.

The adhesive sheet of the present invention may be provided with a protective film layer which can be easily peeled off, if necessary, on both sides of the adhesive layer for easy handling. The material of the protective film layer is not particularly limited, and examples thereof include a polyester film, a polyolefin film coated with a silicone or fluorine compound, and a paper laminated with these.

The adhesive sheet of the present invention comprises at least one or more adhesive layers. The adhesive sheet has a plurality of adhesive layers having different compositions laminated on each other, or has a composition from one surface to the other surface. This includes those that change continuously. It is preferable that at least one or more of the adhesive layers referred to herein include at least one or more of a thermoplastic resin and a thermosetting resin as components in the adhesive composition constituting the adhesive layer, but the type is particularly limited. Not done. Thermoplastic resin has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulation due to low water absorption. Thermosetting resin has heat resistance, insulation at high temperatures, chemical resistance, and adhesion. It is necessary to achieve a balance between physical properties such as strength of the agent layer.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), styrene-
Known examples such as butadiene-ethylene resin (SEBS), acrylic, polyvinyl butyral, polyamide, polyester, polyimide, polyamideimide, and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with a thermosetting resin described below. Specific examples include an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, and a silanol group. These functional groups are preferable because the bond with the thermosetting resin is strengthened and the heat resistance is improved. As the thermoplastic resin, a copolymer containing butadiene as an essential copolymer component is particularly preferred from the viewpoint of adhesiveness to the material (B), flexibility, and an effect of relaxing thermal stress, and various types can be used. In particular, acrylonitrile-butadiene copolymer (NB) is preferred from the viewpoints of adhesion to metals, chemical resistance, and the like.
R) and styrene-butadiene-ethylene resin (SE
BS) is preferred. Further, a copolymer having butadiene as an essential copolymer component and having a carboxyl group is more preferable. For example, NBR (NBR-C) and SEBS (S
EBS-C) and the like. As NBR-C, for example, acrylonitrile and butadiene may be used in about 10/90 to 5
Carboxylated terminal groups of copolymer rubber copolymerized at a molar ratio of 0/50, or acrylonitrile,
Ternary copolymer rubbers of butadiene and a carboxyl group-containing polymerizable monomer such as acrylic acid and maleic acid are exemplified. Specifically, PNR-1H (Nippon Synthetic Rubber Co., Ltd.)
Manufactured), "Nipol" 1072J, "Nipol" DN61
2. "Nipol" DN631 (Nippon Zeon Co., Ltd.)
Manufactured), "Hiker" CTBN (manufactured by BF Goodrich)
Etc. MX-073 as SEBS-C
(Manufactured by Asahi Kasei Corporation).

Examples of the thermosetting resin include known resins such as an epoxy resin, a phenol resin, a melamine resin, a xylene resin, a furan resin, and a cyanate ester resin. Particularly, epoxy resin and phenol resin are preferable because of their excellent insulating properties.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but is not limited to bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as resorcinol, dihydroxynaphthalene, dicyclopentadiene diphenol, epoxidized phenol novolak, epoxidized cresol novolak, epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, cyclohexane epoxide, etc. Alicyclic epoxy, and the like. Further, it is effective to use a halogenated epoxy resin, particularly a brominated epoxy resin, for imparting flame retardancy. At this time, although the use of only the brominated epoxy resin can impart flame retardancy, the heat resistance of the adhesive is greatly reduced, so that it is more effective to use a mixed system with a non-brominated epoxy resin. Examples of the brominated epoxy resin include a copolymerized epoxy resin of tetrabromobisphenol A and bisphenol A, or "BR
EN "-S (manufactured by Nippon Kayaku Co., Ltd.) and the like. These brominated epoxy resins are used in combination of two or more kinds in consideration of bromine content and epoxy equivalent. May be.

As the phenol resin, any known phenol resin such as a novolak type phenol resin and a resol type phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol, and p-phenylphenol; cyclic alkyl-modified phenols such as terpene and dicyclopentadiene; and heterocycles such as nitro, halogen, cyano, and amino groups. Those having a functional group containing atoms, naphthalene, those having a skeleton such as anthracene,
Examples of resins include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

The addition amount of the thermosetting resin is 10
5-400 parts by weight, preferably 50-400 parts by weight per 0 parts by weight
200 parts by weight. When the addition amount of the thermosetting resin is less than 5 parts by weight, the elastic modulus at a high temperature is remarkably reduced, and the semiconductor integrated circuit connection substrate is deformed during use of the device on which the semiconductor device is mounted, and is handled in a processing step. This is not preferable because of lack of workability. If the addition amount of the thermosetting resin exceeds 400 parts by weight, the modulus of elasticity is high, the coefficient of linear expansion is small, and the effect of relaxing thermal stress is small.

The addition of a curing agent and a curing accelerator for epoxy resin and phenol resin to the adhesive layer of the present invention is not limited at all. For example, 3,3 ', 5,5'-
Tetramethyl-4,4'-diaminodiphenylmethane,
3,3 ', 5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-
Diethyl-4,4'-diaminodiphenylmethane, 3,
3'-dichloro-4,4'-diaminodiphenylmethane, 2,2 ', 3,3'-tetrachloro-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfide, 3,3'-diaminobenzophenone ,
3,3′-diaminodiphenyl sulfone, 4,4′-diaminodiphenyl sulfone, 3,4′-diaminodiphenyl sulfone, 4,4′-diaminobenzophenone,
Aromatic polyamines such as 3,4,4'-triaminodiphenylsulfone; amine complexes of boron trifluoride such as boron trifluoride triethylamine complex; 2-alkyl-4-methylimidazole; 2-phenyl-4-alkylimidazole And the like, known acids such as imidazole derivatives, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide, and triphenylphosphine. These may be used alone or in combination of two or more. The addition amount is preferably 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive composition.

In addition to the above components, addition of organic or inorganic components such as antioxidants and ion scavengers is not limited as long as the properties of the adhesive are not impaired. Examples of fine inorganic components include aluminum hydroxide, magnesium hydroxide, metal hydroxides such as calcium aluminate hydrate, silica, alumina, zirconium oxide, zinc oxide, antimony trioxide, antimony pentoxide, and magnesium oxide. Titanium oxide, iron oxide, cobalt oxide, chromium oxide, metal oxides such as talc, inorganic salts such as calcium carbonate, aluminum, gold, silver, nickel, iron, metal fine particles such as, or carbon black, glass, Examples of the organic component include crosslinked polymers such as styrene, NBR rubber, acrylic rubber, polyamide, polyimide, and silicone. These may be used alone or in combination of two or more. The average particle diameter of the fine particle component is preferably 0.2 to 5 μ in consideration of dispersion stability. Also, the compounding amount is suitably 2 to 50 parts by weight of the whole adhesive composition.

When the adhesive layer of the adhesive sheet of the present invention is located on the outermost layer of the substrate for connecting a semiconductor integrated circuit and is used for bonding to another member (for example, an IC or a printed board), the adhesive layer is May be provided with a protective film layer similar to that used for the adhesive sheet. The protective film layer as used herein means that it can be peeled off from the adhesive surface without damaging the form of the substrate for semiconductor integrated circuit connection before bonding the substrate for semiconductor integrated circuit connection to another member (for example, an IC or a printed circuit board). Although not particularly limited, examples thereof include a polyester film and a polyolefin film coated with a silicone or fluorine compound, and paper laminated with these.

The semiconductor device according to the present invention is a device using the substrate for connecting a semiconductor integrated circuit according to the present invention.
The shape and structure are not particularly limited as long as it is an A type package. The connection method between the semiconductor integrated circuit connection substrate and the IC includes gang bonding and single point bonding of TAB method, wire bonding used for a lead frame, resin sealing by flip chip mounting, anisotropic conductive film (adhesive). Any of connection and the like may be used. Further, a package called a CSP is also included in the semiconductor device of the present invention.

Next, examples of the adhesive sheet and the substrate for connecting a semiconductor integrated circuit of the present invention and a method of manufacturing a semiconductor device using the same will be described.

(1) Preparation of adhesive sheet: The following (a)
To (d). (A) A coating obtained by dissolving the adhesive composition in a solvent is applied on a polyester film having releasability and dried. The thickness of the adhesive layer is 10 to 1
It is preferable to apply the coating so as to have a thickness of 00 μm. Drying conditions are 100 to 200 ° C. for 1 to 5 minutes. The solvent is not particularly limited, but aromatic solvents such as toluene, xylene and chlorobenzene, ketones such as methyl ethyl ketone and methyl isobutyl ketone, and aprotic polar solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone alone or a mixture thereof are preferred. It is. (B) (a)
By laminating a polyester or polyolefin-based protective film having a releasability with a lower peel strength than that described above, an adhesive sheet having strong adhesive strength is obtained. (C) The adhesive sheet of (b) is, for example, 40 to 7
Heat treatment at 0 ° C. for about 20 to 400 hours to adjust the degree of curing in the semi-cured state, thereby reducing the adhesive strength. (D)
(B) and (c) adhesive sheets having different adhesive strengths,
The adhesive surfaces are laminated together while peeling the protective film to obtain adhesive sheets having different adhesive strengths on both sides.

When the thickness of the adhesive layer is increased, this step may be repeated to laminate a plurality of times.

(2) Preparation of a wiring board layer (A) composed of an insulator layer and a conductor pattern:
T with a three-layer structure in which an adhesive layer and a protective film layer are laminated
The AB tape is processed by the following steps (a) to (d). (A) perforation of sprocket and device holes,
(B) thermal lamination with copper foil, (c) pattern formation (resist coating, etching, resist removal), (d) tin or gold-plating treatment. FIG. 4 shows an example of the shape of the obtained TAB tape (pattern tape).

(3) Preparation of layer (B) on which no conductor pattern is formed: A copper plate or a stainless (SUS304) plate having a thickness of 0.05 to 0.5 mm is degreased with acetone.

(4) Preparation of adhesive layer (C): Prepared by the following steps (a) to (c). (A) The adhesive sheet of (1) is laminated on (B) after peeling off the protective film. Lamination temperature 50-200 ° C, pressure 0.
5 to 4 MPa is preferred.

(5) Preparation of a substrate for connecting a semiconductor integrated circuit:
Processing is performed in the following steps (a) to (c). FIG.
2 shows an example of a substrate for connecting a semiconductor integrated circuit. (A) (4)
(B) with an adhesive prepared in step (1) is punched out with a metal mold, for example, a metal plate with an adhesive having a rectangular shape and a rectangular hole in the center. (B) The polyester protective film is peeled off from the metal plate with the adhesive, and the center hole of the metal plate with the adhesive is placed on the conductor pattern surface of the pattern tape of (A) or the polyimide film surface of the back surface of (A). Match the device hole, temperature 20-150 ° C, pressure 0.1
Crimping at ~ 3 MPa. (C) Post-curing is performed in a hot air oven at 80 to 200 ° C. for about 15 to 180 minutes for heat curing of the adhesive.

(6) Preparation of a semiconductor device: The inner lead portion of the substrate for connecting a semiconductor integrated circuit of (5) is thermocompression-bonded (inner lead bonding) to a gold bump of the IC, and
With. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin. The obtained semiconductor device is connected to a printed circuit board or the like on which other components are mounted via solder balls, and mounted on an electronic device. FIG. 1 is a cross-sectional view of one embodiment of a semiconductor device of the present invention.

[0043]

EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

Evaluation method (1) Preparation of evaluation pattern tape (wiring board layer): T
An 18 μm electrolytic copper foil was laminated on a tape with an adhesive for AB (# 7100, manufactured by Toray Industries, Inc.) at 140 ° C. and 0.1 MPa. Then in an air oven at 80 ° C, 3
Heat curing treatment was sequentially performed at 100 ° C. for 5 hours, 150 ° C. for 5 hours, and 5 hours at 150 ° C. to prepare a TAB tape with a copper foil. A photoresist film was formed on the copper foil surface of the obtained TAB tape with copper foil, etching, and resist peeling were performed by a conventional method to prepare a pattern tape sample for evaluation.

(2) Embedding of conductive pattern and cure foaming: A pure copper plate having a thickness of 0.1 mm with an adhesive layer laminated with an adhesive sheet having a thickness of 100 μm was prepared by (1)
On the conductive pattern surface of the evaluation pattern tape
After laminating under conditions of 0.1 ° C. and 150 ° C., heat curing was performed in an air oven at 150 ° C. for 2 hours.
This was immersed in an etching solution containing ferric chloride as a main component to dissolve the pure copper plate. Finally, the exposed adhesive layer was observed under a microscope to evaluate the foaming during curing and the embedding property of the conductor pattern.

(3) Peeling strength and peeling during curing:
In the same manner as in (2), a 0.35 mm-thick stainless steel sheet with an adhesive laminated on a 100 μm-thick adhesive sheet (S
US304) A plate is punched into a 30 mm square, a width of 48 mm,
After crimping 20 pieces of a 1 m-long polyimide film (“UPILEX” 75S manufactured by Ube Industries, Ltd.) at a temperature of 130 ° C. and 0.1 MPa at a pitch of 50 mm, an outer diameter of 170
and wound at 150 ° C. for 2 hours in an air oven. The state of peeling of the stainless steel plate of the obtained sample was visually evaluated. Further, the polyimide film was cut so as to have a width of 2 mm, and peeled in a 90 ° direction at a speed of 50 mm / min, and the peeling force at that time was measured.

(4) Adhesive strength: polyimide film having a width of 50 mm ("UPILEX" 75S manufactured by Ube Industries, Ltd.)
The non-measurement surface of the adhesive sheet is laminated using a double-sided adhesive tape. Further, the protective film on the measurement surface was removed, and after being laminated on a stainless steel plate having a thickness of 0.35 mm at 25 ° C. and 0.1 MPa, 50 m in the 90 ° direction.
Peeling was performed at a speed of m / min, and the peeling force at that time was defined as adhesive strength.

(5) Laminating processability: The protective film on the side to be evaluated of the adhesive sheet having a width of 50 mm was removed, and the temperature was changed to 130 ° C., 0.1 MPa, speed 1 m / min and 3
Continuous lamination was performed on a 0.35 mm-thick stainless steel plate under the conditions of m / min, and at that time, the state of mixing of bubbles and occurrence of defective lamination were visually evaluated.

(6) Solder heat resistance: A 30 mm square sample prepared by the above method (3) was conditioned for 48 hours in an atmosphere of 85 ° C. and 85% RH, and then immediately placed on a solder bath for 60 seconds. The highest temperature without floating, swelling and peeling was measured.

(7) Heat cycle test: A 30 mm square sample prepared by the above method (3) was placed in a heat cycle tester (PL-3 type, manufactured by Tabai Espec Co., Ltd.) at -20.
600 cycles of treatment were carried out at a temperature of 1 to 100 ° C and a minimum and maximum temperature of 1 hour each, and the occurrence of peeling was evaluated.

Example 1 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 50)
50, bromine content 49%, epoxy equivalent 395), non-brominated epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epico-
834, epoxy equivalent 250), 4,4'-diaminodiphenylsulfone, 3,3 ', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane and methyl ethyl ketone in the same weight as the dispersion, respectively. And the mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution.The adhesive solution was coated with a bar coater using a 25 μm thick polyethylene terephthalate film with a silicone release agent (Fujimori Kogyo Co., Ltd.) ) "Film binder" G
T) to a dry thickness of about 50μ,
Dry at 5 ° C. for 5 minutes. Further, a 25 μm thick polyethylene terephthalate film (“Film Vina” GT manufactured by Fujimori Kogyo Co., Ltd.) with a similar silicone release agent was further laminated thereon to prepare an adhesive sheet having protective films on both sides. Next, the adhesive sheet was heated at 60 ° C for 96 hours.
Heat treatment was carried out for a period of time to increase the degree of curing in a semi-cured state to reduce the adhesive strength. Further, two adhesive sheets of the backing adhesive sheet having reduced adhesive strength and the unheat-treated adhesive sheet were put together and laminated to form an adhesive sheet having an adhesive thickness of 100 μm. Using this adhesive sheet, characteristics were evaluated in accordance with the above evaluation method. Table 2 shows the evaluation results.

The adhesive sheet was laminated on a 0.35 mm-thick stainless steel plate at 150 ° C. and 0.1 MPa to obtain a stainless steel plate with an adhesive layer. This stainless steel plate with an adhesive layer was punched into a shape having a 30 mm square outer shape and a 20 mm square hole opened in the center. On the other hand, a pattern tape shown in FIG. 3 was prepared in the same manner as in the evaluation method (1) described above. However, a photosensitive solder resist ("Probimer" 71, manufactured by Ciba Geigy) was applied to the conductor pattern surface, dried, exposed with a photomask, developed, and thermally cured to remove the resist on the solder ball connection pads. Next, the pure copper plate was positioned so that the holes corresponded to the device holes of the pattern tape.
After thermocompression bonding to the surface opposite to the conductor pattern under the condition of 0.1 MPa, the substrate was heated and cured in an air oven at 150 ° C. for 2 hours to prepare a semiconductor integrated circuit connection substrate.

Further, the inner lead portion of the substrate for connecting a semiconductor integrated circuit was subjected to inner lead bonding at 450 ° C. for 1 minute to connect the semiconductor integrated circuit. Next, resin sealing was performed with an epoxy-based liquid sealing agent (“Chipcoat” 1320-617, manufactured by Hokuriku Paint Co., Ltd.). After solder cream printing on the pad for solder ball connection, solder ball of 0.3mm diameter (Tanaka Electronics Industries
(Manufactured by Co., Ltd.) and heated in a reflow furnace at 260 ° C. to obtain a semiconductor device. FIG. 1 shows a cross section of the obtained semiconductor device.

Example 2 Spherical silica ("Excelica", manufactured by Tokuyama Corporation) was mixed with toluene, followed by sand milling to prepare a silica dispersion. NBR-C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd., "Epicoat" 828, epoxy equivalent 186), 4,4'-diamino Diphenyl sulfone,
4,4′-Diaminodiphenylmethane and a dispersion were added to each of the same proportions of methyl ethyl ketone so as to have the composition ratio shown in Table 1, followed by stirring and mixing at 30 ° C. to prepare an adhesive solution. Using this adhesive solution, an adhesive sheet having an adhesive thickness of 50 μm was obtained in the same manner as in Example 1. An adhesive sheet having an adhesive thickness of 100 μm was obtained in the same manner as in Example 1 except that this adhesive sheet was heat-treated at 60 ° C. for 48 hours. Table 2 shows the characteristics.

Example 3 Aluminum hydroxide (H-42I, manufactured by Showa Denko KK)
Was mixed with toluene, followed by sand milling to prepare an aluminum hydroxide dispersion. NBR-
C (manufactured by Nippon Synthetic Rubber Co., Ltd., PNR-1H), epoxy resin (manufactured by Yuka Shell Co., Ltd., "Epicoat" 828, epoxy equivalent: 186), phenol novolak resin (manufactured by Gunei Chemical Industry Co., Ltd., PSM4261) ), 4,4'-diaminodiphenylsulfone, triphenylphosphine and methyl ethyl ketone in the same weight as the dispersion, respectively.
And the mixture was stirred and mixed at 30 ° C. to prepare an adhesive solution. Example 1 using this adhesive solution
In the same manner as in the above, an adhesive sheet having an adhesive thickness of 50 μm was obtained. This adhesive sheet was heat-treated at 70 ° C. for 100 hours to prepare an adhesive sheet having reduced adhesive strength. Further, the unheated adhesive sheet of Example 1 was laminated on this adhesive sheet to obtain an adhesive sheet having an adhesive thickness of 100 μm. Table 2 shows the characteristics.

Comparative Example 1 An adhesive sheet having an adhesive thickness of 100 μm was prepared under the same conditions and in the same manner as in Example 1, except that the two adhesive sheets of the unheat-treated adhesive sheet were laminated together. Using this adhesive sheet, characteristics were evaluated in accordance with the above evaluation method. Table 2 shows the evaluation results. Comparative Example 2 Heat treatment conditions were 60 ° C., 48 hours and 60 ° C., respectively.
An adhesive sheet having an adhesive thickness of 100 μm was prepared under the same conditions and in the same manner as in Example 1 except that the adhesive surfaces of the adhesive sheet were set to 72 hours and two adhesive layers were laminated. Using this adhesive sheet, characteristics were evaluated in accordance with the above evaluation method. Table 2 shows the evaluation results.

[0057]

[Table 1]

[0058]

[Table 2]

From the examples and comparative examples in Tables 1 and 2, it can be seen that the adhesive sheet for a semiconductor device obtained according to the present invention is excellent in bonding workability while maintaining the adhesive strength and durability.

[0060]

Industrial Applicability The present invention is to provide a novel adhesive sheet for a semiconductor device excellent in laminating processability, adhesive strength and durability, a substrate for connecting a semiconductor integrated circuit and a semiconductor device using the same. In addition, the semiconductor device adhesive sheet of the present invention can improve the economics and reliability of the semiconductor integrated circuit connection substrate for high-density mounting and the semiconductor device based on easy processability.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of one embodiment of a BGA type semiconductor device using a semiconductor device adhesive sheet and a semiconductor integrated circuit connection substrate of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor integrated circuit connection substrate before connection of the semiconductor integrated circuit using the semiconductor device adhesive sheet of the present invention.

FIG. 3 is a perspective view of one embodiment of a pattern tape (TAB tape) constituting a substrate for connecting a semiconductor integrated circuit according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2 Gold bump 3,11,17 Insulating film having flexibility 4,12,18 Adhesive layer constituting wiring board layer 5,13,21 Conductor for connecting semiconductor integrated circuit 6,14 Adhesive layer composed of the adhesive composition of the invention 7, 15 Layer on which no conductor pattern is formed 8, 16 Solder resist 9 Solder ball 10 Sealing resin 19 Sprocket hole 20 Device hole 22 Conductor for solder ball connection

Claims (7)

[Claims] 1. A semiconductor integrated circuit board comprising: (A) a wiring board layer comprising an insulator layer and a conductor pattern; (B) at least one layer having no conductor pattern formed thereon; and (C) at least one adhesive layer. (C) An adhesive sheet for a semiconductor device forming an adhesive layer, wherein the adhesive force on both surfaces of the adhesive sheet is P ₁ and P ₂ (P ₁ >
P ₂ ), 0 ≦ P ₂ / P ₁ ≦ 0.9 and 2 N
An adhesive sheet for a semiconductor device, wherein cm ⁻¹ ≦ P ₁ ≦ 50 N cm ⁻¹ . 2. An adhesive sheet comprising at least one adhesive layer formed from an adhesive composition containing at least one thermoplastic resin and at least one thermosetting resin as essential components.
2. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive sheet has at least two layers. 3. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive sheet contains a copolymer containing butadiene as an essential copolymer component. 4. The adhesive sheet for a semiconductor device according to claim 3, wherein the adhesive composition contains butadiene as an essential copolymer component and contains a copolymer having a carboxyl group. 5. The adhesive sheet for a semiconductor device according to claim 1, wherein the adhesive composition contains an epoxy resin and / or a phenol resin. 6. A wiring board layer comprising an insulator layer and a conductor pattern, and (B) a conductor pattern, wherein the adhesive composition for a semiconductor device according to claim 1 is used. A semiconductor integrated circuit connecting substrate having at least one or more adhesive layers and at least one adhesive layer (C). 7. A semiconductor device using the substrate for connecting a semiconductor integrated circuit according to claim 6.