JPH1013158A - Even harmonic mixer, orthogonal mixer, image rejection mixer, double-balanced mixer, receiver, transmitter and phase-locked oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the size of the even harmonic mixer small especially for use in a transmitter-receiver of a radio communication system and to miniaturize the communication equipment using the even harmonic mixer. SOLUTION: A ring-shaped anti-parallel diode pair 101 is used for the even harmonic mixer, and a local oscillating wave is applied by using an active balun 102. The active balun 102 is made up of a transistor(TR) 104, a 1st resistor 105a connected between a drain of the TR 104 and a ground conductor with respect to high frequencies, and a 2nd resistor 105b connected between a source of the TR 104 and the ground conductor in terms of high frequencies.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an even harmonic mixer, and more particularly to a miniaturization of an even harmonic mixer used in a transmission / reception apparatus of a wireless communication system, and communication of a communication device using the even harmonic mixer. Quality improvement.

[0002]

2. Description of the Related Art One of the means for frequency mixing at high frequencies is an even harmonic mixer using an anti-parallel diode pair (APDP). The principle proposal of the even harmonic mixer is IEEE Trans. On M published in 1975 by IEEE.
icrowave theory and techniques, vol.MTT-23, No.8,
Harmonic mixing wi from page 667 to page 673
than antiparallel diode pair ■. First, the configuration and operation of the even harmonic mixer will be described.

FIG. 38 shows a general configuration of this even harmonic mixer. In the figure, 1 is a mixer diode, 2 is an anti-parallel diode pair (hereinafter referred to as APDP), and 3 is a branching circuit. APDP2 is the reverse polarity mixer diode 1
a, 1b are connected in parallel. For receivers, this
The wireless signal RF received via the antenna and the output LO from the local oscillator are added to the APDP 2 via the branching circuit 3 to extract an intermediate frequency signal (IF).

[0004] In the case of a transmitter, IF and LO are added to the APDP 2 via a demultiplexing circuit 3 to extract RF. When LO is added to the even harmonic mixer, the mixer diodes 1a and 1b are alternately turned on every half cycle, and a current flows, as shown in FIG. As a result, an LO current flows as shown in FIG. 40, and the conductance increases every half cycle. Therefore, there are only odd-order harmonics of LO and even-order harmonics of conductance. Accordingly, in the even harmonic mixer for transmission, the frequency is close to RF, and the second harmonic of LO which becomes spurious can be suppressed (FIG. 41). The amount of suppression is two diodes 1a,
Only the balance of 1b can suppress even-order harmonics of LO and odd-order harmonics of conductance. For this reason, much higher suppression is possible as compared with a normal balanced mixer. By the way, in the case of a microwave, the mixer of the normal fundamental wave operation is 2
Although the suppression is about 5 dB, the even-harmonic mixer can suppress 50 to 60 dB. When the output signal frequency fout of this even harmonic mixer is expressed by an equation,

Fout = | m · fin ± n · fp | m, n is an integer and | m ± n | is an odd number (1)

[0006] Where fin is the input signal frequency, fp
Is the local oscillation frequency. In the following description, RF
Frf is used to indicate a frequency, and fif is used to indicate an IF frequency. When using this even harmonic mixer for a normal transceiver,

Fout = | fin ± 2fp | (2)

[0008] Therefore, since it can be operated at half fp, most of the microwaves including the reference literature,
In particular, this configuration is applied to a transceiver for millimeter waves.

As described above, the even harmonic mixer has the following features, and is used for wireless communication equipment and the like. (1) Low spurious especially when applied to the transmitter
(2) Since the LO frequency fp can be halved, it is suitable for high frequency operation such as millimeter wave. In addition, the effect of price reduction can be expected.

[0010]

The configuration of even harmonic mixers has been reported in various ways. As shown in FIG. 42, a configuration using a branching circuit 2 composed of an RF band-pass filter (BPF) 21, an LO high-pass filter (HPF) 22, and an IF low-pass filter (LPF) 23 is used. General.
However, such a configuration is large and is not suitable for application to a wireless communication device or the like.

Therefore, the inventors are studying miniaturization of the branching circuit 3. Figure 43 shows the International Microwave Symposiu, hosted by the IEEE in Boston, June 1991.
m 1991 MTT-S Digest page 879 to 882
It is an even harmonic mixer described on the page. In the figure, 32 is an RF terminal, 33 is an LO terminal, 34 is an IF terminal, 35
Is an open-end stub, 36 is a short-circuited stub, 37 is an RF choke, and 38 is a DC cut. In this configuration, the local oscillation frequency fp and the radio frequency frf (2 fp) are split using the open-end stub 35 and the open-circuit stub 36.

Next, the operation will be described. Open end stub 3
5 and the tip short-circuit stub 36 are designed to be approximately one quarter wavelength at fp and therefore approximately one half wavelength at frf. At this time, the open-end stub 35 viewed from the APDP2
The impedance between the stub 36 and the tip short-circuit stub 36 is as shown in FIGS. Since the open-end stub 35 is on the RF terminal 32 and baseband terminal 34 side, the impedance near the fif and frf becomes high as shown in FIG. 44, and the APDP 2 is connected to each terminal. On the other hand, the impedance near fp becomes low impedance and APDP2 is grounded. Conversely, the tip short-circuit stub 3
Since 6 is the LO terminal 33 side, as shown in FIG.
The vicinity has low impedance, and the APDP 2 is grounded.
On the other hand, the impedance near the fp becomes high impedance, and the APDP 2 is connected to the LO terminal 33.

Although this configuration is simple, since the stub is used, the applicable frequency range is narrow. Further, if this is to be realized at a relatively low frequency, the open-end stub 35 and the short-circuited stub 36 become long, and there is a problem that the size is increased.

FIG. 46 shows another example of a conventional even harmonic mixer. The IEICE Autumn National Convention 1993, C-47.
It was reported in. In the figure, reference numeral 80 denotes a slot line, 81 denotes a coplanar line, and 82 denotes a wire for suppressing a balanced mode excited in the coplanar line. The even harmonic mixer includes a slot line 80 and a coplanar line 8.
AP connected in a ring shape where it meets with 1
DP2 connected, slot line 8 depending on excitation phase
0 and the coplanar line 81 are isolated from each other. Therefore, there is an advantage that demultiplexing can be performed in a wide band.

FIG. 47 shows the RF of each APDP2 of the even harmonic mixer,
The phase relationship between LO and IF is shown. In the figure, a, b, c and d are
A connection point between APDP2s, which corresponds to FIG. RF and
IF has the same phase relationship, and LO and RF / IF are at the midpoint of the bridge, so that isolation can be obtained over a wide band. This is not limited to the case where the APDP 2 connected in a ring shape is used, but the same applies to the diodes connected in a ring shape shown in FIGS. 48 and 49.
204 (name: mixer) indicates the principle.

However, it is difficult to integrate the slot line 80 in consideration of the connection of the ground conductor. If this is to be realized at a relatively low frequency, there is a problem that the slot line 80 becomes large. In addition, there is a problem that spurious components such as harmonics from the APDP 2 to the LO terminal 33 flow backward, resulting in spurious components. Further, there is a problem that the driving impedance of the APDP 2 fluctuates due to the impedance of the circuit on the LO side, and the operation becomes unstable.

[0017]

An even harmonic mixer according to a first aspect of the present invention includes an active balun that receives a local oscillation wave from an input terminal and outputs a first output signal and a second output signal. An even harmonic mixer having an anti-parallel diode pairing that inputs the first output signal and the second output signal and inputs and outputs an input signal wave and an output signal wave, wherein the active balun is First and second resistors connected to a conductor at high frequency, the first resistor as a drain (or collector), the second resistor as a source (or emitter), and the input terminal as a gate (or emitter). And a transistor respectively connected to the base in a high frequency manner, and the anti-parallel diode pairing includes four anti-parallel diode pairs in which diodes of opposite polarities are connected in parallel. Are connected in a ring shape, and at these connection points, the first connection point is connected to the ground conductor, and the input signal wave and the output signal wave are input from a second connection point facing the first connection point. And a third connection point is connected to the drain (or collector) of the transistor, and a fourth connection point is connected to the source (or emitter) of the transistor.
Connected to.

An even harmonic mixer according to a second aspect of the present invention includes: a first active balun that receives a local oscillation wave from a first input terminal and outputs a first output signal and a second output signal; A radio frequency signal is input from a second input terminal, and a third
A second active balun for outputting an output signal and a fourth output signal, and the first output signal, the second output signal, the third output signal, and the fourth output signal. An even harmonic mixer having an anti-parallel diode pairing for inputting and outputting an input signal wave and an output signal wave, wherein the first active balun is connected to a ground conductor at a high frequency. A first transistor in which a resistor and the first resistor are connected to a drain (or a collector), the second resistor is connected to a source (or an emitter), and the input terminal is connected to a gate (or a base) at high frequency; The second active balun includes third and fourth resistors connected to a ground conductor at a high frequency, the third resistor connected to a drain (or a collector), and the fourth resistor connected to a ground (high frequency). Source Or an emitter) having a second transistor whose input terminal is connected to a gate (or a base) at a high frequency, respectively, and the anti-parallel diode pairing comprises four anti-parallel diodes connected in parallel with diodes of opposite polarities. A parallel diode pair is connected in a ring shape, and at those connection points, a first connection point is connected to the drain (or collector) of the second transistor.
, A second connection point facing the first connection point is connected to a source (or emitter) of the second transistor, and a third connection point is connected to a drain (or collector) of the first transistor. And the fourth connection point is connected to the source (or emitter) of the first transistor.

The even harmonic mixer according to a third aspect of the present invention has a first
Alternatively, in the second invention, the first of the active baluns
A first buffer amplifier is provided between an output terminal that outputs an output signal of
A second buffer amplifier is provided between an output terminal for outputting a second output signal of the active balun and the anti-parallel diode pairing.

[0020] The even harmonic mixer according to a fourth aspect of the present invention comprises a first mixer.
Alternatively, in the second invention, a buffer amplifier is provided between an input terminal for inputting an input signal wave to the anti-parallel diode pairing and the anti-parallel diode pairing.

According to a fifth aspect of the present invention, in the even harmonic mixer according to the first, second or fourth aspect, an output terminal for outputting an output signal wave from the anti-parallel diode pairing and the anti-parallel diode pairing are provided. A buffer amplifier is provided between them.

The even harmonic mixer according to a sixth aspect of the present invention has a first
In the invention, a load resistance exceeding 50 ohms is connected between a ground terminal and a contact between the output terminal for outputting an output signal wave from the anti-parallel diode pairing and the anti-parallel diode pairing, and And an operational amplifier for amplifying the voltage across the load resistor.

An even harmonic mixer according to a seventh aspect of the present invention is the
In the invention, an operational amplifier for connecting a load resistance exceeding 50 ohms between a first connection point and a second connection point of the anti-parallel diode pairing and further amplifying a voltage across the load resistance is provided. And the output of the operational amplifier is an output of the intermediate frequency.

An even harmonic mixer according to an eighth aspect of the present invention has a first harmonic mixer.
Alternatively, in the second invention, a limiter for suppressing amplitude fluctuation is provided between the active balun and the anti-parallel diode pairing.

The even harmonic mixer according to the ninth aspect is characterized in that
Alternatively, in the second invention, a limiter for suppressing amplitude fluctuation is provided between the input terminal of the local oscillation wave and the active balun.

The even harmonic mixer according to a tenth invention is the even harmonic mixer according to the first or second invention, wherein the filter for suppressing a second harmonic of a local oscillation wave is provided between the active balun and the anti-parallel diode pairing. It is provided.

According to an eleventh aspect of the present invention, in the even harmonic mixer of the first or second aspect, a frequency divider is provided between the input terminal of the local oscillation wave and the active balun.

According to a twelfth aspect, in the even harmonic mixer according to the first to eleventh aspects, the first output signal and the second output signal are input instead of the anti-parallel diode pairing. The input signal wave and the output signal wave are input and output, and a diode ring having four diodes connected in a ring is provided.

According to a thirteenth aspect, in the even harmonic mixer according to the first or second aspect, instead of the active balun, a local oscillation wave is inputted from an input terminal, frequency-divided, and a first output signal is outputted. And a frequency divider for outputting a second output signal.

The quadrature mixer according to the fourteenth invention is characterized in that
A splitter that includes two even harmonic mixers according to the thirteenth invention and further distributes a local oscillation wave in phase or in opposite phase, and a 90-degree shifter that distributes or combines a high-frequency signal with a phase difference of approximately 90 degrees; And a phase circuit.

[0031] The orthogonal mixer according to the fifteenth invention is characterized in that
A 45-degree phase shift circuit that includes two even harmonic mixers according to the thirteenth invention and distributes a local oscillation wave with a phase difference of approximately 45 degrees, and distributes or combines high-frequency signals with the same or opposite phases. And a distribution / synthesis circuit.

An image rejection mixer according to a sixteenth aspect of the present invention includes the quadrature mixer according to the fourteenth or fifteenth aspect, and a 90-degree phase shift circuit for distributing or synthesizing the intermediate frequency signal with a phase difference of approximately 90 degrees. It is provided.

A double balanced mixer according to a seventeenth aspect of the present invention comprises:
A 90-degree phase shifter that includes two even harmonic mixers according to the first to thirteenth aspects and further distributes a local oscillation wave with a phase difference of approximately 90 degrees; And a 180-degree hybrid power distributor that distributes and combines in opposite phases.

An even harmonic mixer according to an eighteenth aspect of the present invention is the even harmonic mixer according to the first to thirteenth aspects, wherein the anti-parallel diode pairing or the diode ring is monolithically integrated.

A receiver according to a nineteenth aspect includes the even harmonic mixer according to the first to thirteenth aspects.

A transmitting apparatus according to a twentieth aspect of the present invention includes the even harmonic mixer according to the first to thirteenth aspects.

A phase-locked oscillator according to a twenty-first aspect uses the even harmonic mixer according to the first to thirteenth aspects as a phase detector.

The present invention operates as follows. In the even harmonic mixer according to the first invention, a local oscillation wave is supplied to the anti-parallel diode pairing by using an active balun constituted by transistors and the like. As a result, as compared with the configuration using the conventional slot line, the semiconductor integrated circuit is small and easy to integrate. In addition, the leakage of the unnecessary wave to the local oscillation terminal is suppressed by the isolation of the active balun. Further, the impedance fluctuation of the local oscillation terminal due to the fluctuation of the diode impedance can be suppressed.

In the even harmonic mixer according to the second invention, a local oscillation wave and an input signal wave are supplied to the anti-parallel diode pairing by using an active balun constituted by transistors and the like. As a result, as compared with the configuration using the conventional slot line, the semiconductor integrated circuit is small and easy to integrate. In addition, the leakage of the unnecessary wave to the local oscillation terminal is suppressed by the isolation of the active balun. Further, the impedance fluctuation of the local oscillation terminal due to the fluctuation of the diode impedance can be suppressed. There is also an effect that IF becomes a differential output.

In the even harmonic mixer according to the third invention, a buffer amplifier is provided between the active balun used as a branching circuit and the anti-parallel diode pairing (diode ring). It is possible to suppress the imbalance in the driving phase of the anti-parallel diode pairing (diode ring) due to the variation in the two output impedances of the active balun. Further, even if the impedance of the diode or the anti-parallel diode pair fluctuates due to the fluctuation of the local oscillation power, the impedance of the local oscillation terminal is stabilized.

In the even harmonic mixer according to the fourth invention, a buffer amplifier is provided between the input signal terminal and the anti-parallel diode pairing (diode ring).
Even if the impedance of the diode or the anti-parallel diode pair fluctuates due to the fluctuation of the local oscillation power, the impedance of the input signal terminal is stabilized. Also, there is an effect that the isolation between the local oscillation terminal and the input signal terminal is increased.

In the even harmonic mixer according to the fifth invention, a buffer amplifier is provided between the output signal terminal and the anti-parallel diode pairing (diode ring).
Even if the impedance of the diode or the anti-parallel diode pair fluctuates due to the fluctuation of the local oscillation power, the impedance of the output signal terminal is stabilized.

The even harmonic mixer according to the sixth aspect of the invention has a function of increasing the terminal voltage by receiving the output signal wave output from the anti-parallel diode pairing (diode ring) with a high impedance load resistor. .

The even harmonic mixer according to the seventh aspect of the invention has a function of increasing the terminal voltage by receiving the output signal wave output from the anti-parallel diode pairing (diode ring) with a high impedance load resistor. .

In the even harmonic mixer according to the eighth invention, a limiter is provided between the active balun used as a branching circuit and the anti-parallel diode pairing (diode ring). This limiter suppresses the fluctuation of the local oscillation power. As a result, there is an effect of suppressing a change in conversion loss due to a change in local oscillation power and a change in impedance of a diode or an anti-parallel diode pair.

In the even harmonic mixer according to the ninth aspect, a limiter is provided on the input side of the active balun. This limiter suppresses the fluctuation of the local oscillation power. As a result, there is an effect of suppressing a change in conversion loss due to a change in local oscillation power and a change in impedance of a diode or an anti-parallel diode pair.

In the even harmonic mixer according to the tenth aspect, a filter is provided between the active balun used as a branching circuit and the anti-parallel diode pairing (diode ring). This filter has an effect of suppressing the second harmonic of the local oscillation wave generated in the active balun.

In the even harmonic mixer according to the eleventh aspect, a frequency divider for dividing the local oscillation wave by two is provided. There is an effect that it can be operated at the same local oscillation frequency as the mixer of the ordinary fundamental wave operation.

In the even harmonic mixer according to the twelfth aspect, a local oscillation wave is supplied to the diode ring from the active balun.

In the even harmonic mixer according to the thirteenth aspect, a frequency divider for dividing the local oscillation wave by two is provided, and the differential output is supplied to an anti-parallel diode pairing (diode ring). There is an effect that it can be operated at the same local oscillation frequency as the mixer of the ordinary fundamental wave operation. In addition, similar to the active balun, the signals can be distributed in a wide band in opposite phases and have the same effect.

In the quadrature mixer according to the fourteenth invention, since the even harmonic mixers according to the first to thirteenth inventions are used, it is possible to achieve a compact and monolithic integration on a semiconductor substrate. In addition, it is possible to increase the bandwidth.

In the quadrature mixer according to the fifteenth aspect, since the even harmonic mixers according to the first to thirteenth aspects are used, it is possible to realize a small-sized monolithic integration on a semiconductor substrate. In addition, it is possible to increase the bandwidth.

In the image rejection mixer according to the sixteenth aspect of the invention, since the orthogonal mixer according to the sixteenth or seventeenth aspect is used, it is possible to achieve a compact and monolithic integration on a semiconductor substrate. In addition, it is possible to increase the bandwidth.

In the double balanced mixer according to the seventeenth invention, since the even harmonic mixers according to the first to thirteenth inventions are used, a small-sized monolithic integration on a semiconductor substrate becomes possible. In addition, it is possible to increase the bandwidth.

In the even harmonic mixer according to the eighteenth aspect of the present invention, a uniform diode can be obtained by monolithically integrating the anti-parallel diode pairing (or diode ring).

In the receiver according to the nineteenth aspect,
The use of the even harmonic mixers according to the first to thirteenth inventions has an effect that the device can be downsized.

In the transmission apparatus according to the twentieth aspect,
The use of the even harmonic mixers according to the first to thirteenth inventions has an effect that the device can be downsized.

In the phase-locked oscillator according to the twenty-first aspect, the use of the even harmonic mixer according to the first to thirteenth aspects as a phase detector has an effect that the device can be downsized.

[0059]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. Hereinafter, the even harmonic mixer according to the first embodiment will be described with reference to the drawings. In FIG. 1, 101 is A
An APDP ring using four PDPs 2, an active balun 102 to which an output from a local oscillator is input and configured using FETs and transistors, and a splitter circuit 103 for splitting a radio frequency signal RF and an intermediate frequency signal IF. . The anti-parallel diode pairing 101 has four connection points a, b, c, and d. A and b are connected to the output terminal of the active balun 102, d is grounded, and c is the branch circuit 10.
3 is connected. The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 are denoted by the same reference numerals.

Next, FIG. 2 shows an example of the configuration of the active balun. In FIG. 2, reference numeral 104 denotes an LO from the input terminal 33.
Are capacitors 108, RF choke inductors 109
Field effect transistor (hereinafter referred to as FE)
T) and 105 are resistors connected to the drain and source of the FET 104, 106, 107 and 108 are DC cut capacitors, 109 is an RF choke inductor, 11
Reference numeral 5 denotes an output terminal of the active balun. FIG. 3 shows a high-frequency equivalent circuit. In the figure, 110 is a gate
A source-to-source capacitance Cgs, 111 is a drain resistance Rds, 112 is a current source, 113 is a load resistance, and 114 is an internal resistance of a power supply.

Next, the operation will be described. The point that an active balun 102 is used instead of the slot line 80 in FIG. When a local oscillation wave is applied to the LO terminal 33, a voltage Vp is applied between the gate of the FET 104 and the ground conductor. Then, Vp is divided, and a voltage Vp ■ is applied to the gate-source capacitance Cgs110 of the FET 104. As a result, gmVp ■ is excited in the current source 112 between the drain and the source.
As a result, as shown in FIG. 3B, it becomes equivalent to the voltage source gm · Vp ■ · Rds of the internal resistance Rds111 between the drain and source terminals. Therefore, the local oscillation current (LO current) is added to the load resistance RL113.
Flows, and the local oscillation voltage (LO voltage) of the opposite phase is applied to the output terminals 115a and 115b of the active balun as shown in FIG.
Occurs. The opposite-phase LO voltage is similar to the electric field at the two contacts between the slot line 80 and the APDP 2 in the conventional example shown in FIG. Accordingly, the even harmonic mixer shown in FIG. 1 operates in the same manner as the conventional one. The letters a, b, c and d written on the contact points of the APDP 2 in FIG. 1 correspond to the letters a, b, c and d in FIG.

When an RF input signal wave is applied to the RF terminal 32 of the branching circuit 103, the signal is frequency-mixed with the second harmonic of the local oscillation wave, and an IF output signal wave is output to the IF terminal 34 of the branching circuit 103. (Operation as a down converter). Alternatively, when an IF input signal wave is added to the IF terminal 34 of the demultiplexing circuit 103, the frequency is mixed with a second harmonic of the local oscillation wave, and an RF output signal wave is output to the RF terminal 32 of the demultiplexing circuit 103. (Operation as an upconverter).

As described above, the active balun 102 has functions similar to those of the related art and has the following effects. (1) Miniaturization is easy because no slot line is used. Therefore, there is an effect that the even harmonic mixer can be monolithically integrated on the semiconductor substrate. (2) APDP ring 101 by active balun 102
The backflow of spurious components such as higher harmonics from the input terminal to the LO terminal 33 is suppressed, and the spurious components are effectively reduced. (3) Due to the active balun 102, the driving impedance of the APDP ring 101 does not fluctuate due to the impedance of the circuit on the LO side. Accordingly, the operation is stabilized. When the output impedance of the active balun 102 is set to be higher than 50 ohms, the local oscillation current flowing when the APDP 2 is turned on can be reduced, and the local oscillation power can be reduced to a low level. is there.

In the above description, the active balun 102
Although the description has been made with the same value as the resistor 105 for use, a different value may be obtained in consideration of a bias condition or the like, and the same effect is exerted. In the above description, the FET 104 has been described as the semiconductor element for the active balun 102. However, a transistor may be used to achieve the same effect.

In the above description, the active balun 102
Is connected to the LO terminal 33, but a matching circuit 116 may be provided as shown in FIG. 4, which has the effect of operating with lower LO power. Also, a matching circuit may be provided at the drain and source of the active balun 102, which has the effect of operating with lower LO power.

Embodiment 2 In the second embodiment, the APDP ring 101 of the first embodiment is replaced with a diode ring 120 including four diodes 1. Embodiment 2 is shown in FIG. The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. 1 are denoted by the same reference numerals. As described in the conventional example of FIG. 48, even in this case, the phase relationship is the same as that of FIG. 49 and the device operates as an even harmonic mixer. Therefore,
An effect similar to that of the first embodiment is obtained.

Embodiment 3 In the third embodiment, the RF input signal wave is distributed in the opposite phase by the RF active balun 121,
This is a configuration to apply to the APDP ring 101. FIG. 6 shows a configuration example of the third embodiment. In the figure, reference numeral 121 denotes an RF active balun, which is a conventional example shown in FIGS.
The same or corresponding parts as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals. Here active balun for RF1
The configuration and operation principle of the active balun 102 are exactly the same as the operation principle of the active balun 102 described in the first embodiment. Therefore, an RF input signal wave is input from the gate of the FET 104,
In this structure, output waves having opposite phases are extracted from the drain and the source, respectively.

Next, the operation will be described. The local oscillation wave applied to the LO terminal 33 is applied to the APDP ring 1 as in the first embodiment.
01 is distributed in the opposite phase, and is added between the connection points a and b. The RF input signal wave is distributed in the opposite phase by the RF active balun 121 and is applied between the connection points c and d. Therefore,
The even harmonic mixer shown in FIG. 6 is the same as the conventional example shown in FIG. 47, and operates as an even harmonic mixer.
A, b, c, and d written on the contact point of APDP2 in FIG. 6 and FIG.
Correspond to a, b, c and d. Therefore, when the RF input signal wave is added to the RF active balun 121, the frequency is mixed with the second harmonic of the local oscillation wave, and the IF output signal wave is supplied to the IF terminals 34a and 34b of the branching circuits 103a and 103b in opposite phases. (So-called differential output).

As described above, the active balun 102 and
The RF active balun 121 has the same functions as the conventional one, and has the following effects. (1) As in the first embodiment, miniaturization is easy because no slot line is used. Therefore, there is an effect that the even harmonic mixer can be monolithically integrated on the semiconductor substrate. (2) As in the first embodiment, the active balun 102 and the RF active balun 121
Backflow of spurious components such as harmonics from 1 to the LO terminal 33 and the RF terminal 32 is suppressed, and there is an effect that low spurious is achieved. (3) As in the first embodiment, the active balun 102 and the RF active balun 121 do not cause a change in the driving impedance of the APDP ring 101 due to the impedance of the LO or the RF-side circuit. Accordingly, the operation is stabilized. (4) IF is a differential output and is currently commercially available
Good connectivity with IC. (5) The IF becomes a differential output, which has the effect of removing in-phase mode noise caused by EMI or the like. When the output impedance of the active balun 102 is set to be higher than 50 ohms, APDP2 is turned on.
In this case, the local oscillation current flowing at the time of と can be reduced, and the local oscillation power can be reduced to a low level.

In the above description, the active balun 102
Although the description has been made with the same value as the resistor 105 for use, a different value may be obtained in consideration of a bias condition or the like, and the same effect is exerted. In the above description, the active baluns 102 and 121
Although the FET 104 has been described as a semiconductor element for use in the present invention, a transistor may be used, and a similar effect may be obtained.

In the above description, the active balun 10
Although the gates of the transistors 121 and 121 are connected to the LO terminal 33 and the RF terminal 32, a matching circuit 116 may be provided as shown in FIG. 4, which has the effect of operating with lower LO power or RF power. Also, a matching circuit may be provided at the drain and source of the active balun 102, and lower LO power or RF
It has the effect of operating on electric power.

Embodiment 4 In the fourth embodiment, the APDP ring 101 of the third embodiment is replaced with a diode ring 120 including four diodes 1. Embodiment 4 is shown in FIG. The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46, the first embodiment shown in FIG. 1, and the third embodiment shown in FIG. 6 are denoted by the same reference numerals. As described in the conventional example of FIG. 48, even in this case, the phase relationship is the same as that of FIG. 49 and the device operates as an even harmonic mixer. Therefore, an effect similar to that of the third embodiment is obtained.

Embodiment 5 In the active balun 102, the drain and the source are asymmetric as is clear from the equivalent circuit of FIG. Therefore, the terminals 115a and 115b
And the impedance is not the same. That is, the active balun 10 viewed from the connection point a of the APDP ring 101 and the diode ring 120
2 and the impedance of the active balun 102 viewed from the connection point b are different. For this reason, the local oscillation wave causes variation in the ON current at the time of excitation. As a result, there is a problem that an unbalanced component is generated and the isolation between the LO side and the RF / IF side is deteriorated. The fifth embodiment is designed to solve such a problem of the active baluns 102 and 121.

FIG. 8 shows an even harmonic mixer according to the fifth embodiment.
Shown in In the figure, 122 is the active balun 102
And an APDP ring 101.
The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. 1 are denoted by the same reference numerals. FIG. 9 shows a common source FET 123 as an example of the buffer amplifier 122. The contacts A and B in FIG. 8 correspond to the contacts A and B in FIG. Note that the buffer amplifier reduces impedance imbalance, and includes not only an amplifier having an amplifying function but also an amplifier having an attenuating function.

Next, the operation will be described. Active balun 1
A common source FET 123 is provided as an example of the buffer amplifier 122 between the O.D. Source ground F
The ET 123 has high isolation between the gate and the drain, and only the output impedance of the common source FET 123 can be seen from the APDP ring 101. Therefore, the variation in the output impedance of the active balun 102 cannot be seen from the APDP ring 101. In addition, common source FET 123
Has a high input impedance (almost open), and the output impedance of the active balun 102 varies.
Variations in the input voltages of the buffer amplifiers 122a and 122b are slight.

As described above, the active balun 102 and the AP
By providing the buffer amplifier 122 between the DP ring 101 and the DP ring 101, it is possible to suppress an unbalance component due to a variation in the output impedance of the active balun 102. as a result,
This has the effect of increasing the isolation between the LO side and the RF / IF side. Further, the local oscillation power can be increased, and the local oscillation power input from the outside can be reduced to a low level. Even if there is a change in the APDP ring 101 due to a change in local oscillation power, etc., the buffer amplifier 122
There is an effect that the impedance fluctuation of the LO terminal 33 can be suppressed.

In the above description, the common-source FET 123 has been described as the buffer amplifier 122. However, a common-emitter transistor may be used to achieve the same effect. In addition, other amplifier circuits may have the same effect.

In the above description, the case where the buffer amplifier 122 is provided in the first embodiment has been described. However, the case where the buffer amplifier 122 is provided in the second, third, and fourth embodiments may be employed. It works.

Embodiment 6 FIG. A disadvantage of the diode mixer using the APDP ring 101, the diode ring 120, and the like is that the impedance between terminals depends on the local oscillation power. This is because the local oscillation power turns on / off the diode mixer.
This is because the duty ratio for FF varies. When such an impedance variation occurs, multiple reflection occurs between an amplifier and a filter connected before and after. As a result, a frequency ripple having a gain as shown in FIG.
There is a problem that transmission characteristics deteriorate. The sixth embodiment is designed to solve such problems as the APDP ring 101 and the diode ring 120. Embodiment 6 is shown in FIG. In the figure, 124 is the RF terminal 3
2 and the APDP ring 121. The input signal buffer amplifier is the same or equivalent to that of the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. doing. FIG. 11B shows a common-gate FET 125 as an example of the buffer amplifier 124. Here, the contacts A and B in FIG. 11 correspond to the contacts A and B in FIG.

Next, the operation will be described. A common-gate FET 125 is provided between the RF terminal 32 and the APDP ring 121 as an example of the input signal buffer amplifier 124. Common gate FET
125 has low input impedance, 50 ohms and 75
Close to Ohm. Therefore, electrical connectivity with external circuits is good. Also, since there is isolation characteristics between the input and output terminals, the impedance of the APDP ring 121 cannot be seen from the RF terminal. Therefore, even if the impedance between the terminals of the APDP ring 121 fluctuates due to the fluctuation of the local oscillation power, multiple reflection does not occur between the amplifier and the filter connected before and after.

As a result, the frequency ripple of the gain can be suppressed by the buffer amplifier for input signal 124, and the transmission characteristics are improved. Further, due to the isolation characteristics of the input signal buffer amplifier 124, leakage of a local oscillation wave or an IF output signal wave to the RF terminal 32 can be suppressed, and there is an effect of reducing spurious.

In the above description, the input signal buffer amplifier 1
Although the common gate FET 125 has been described as 24, a common base transistor may be used, and the same effect can be obtained.
In addition, other amplifier circuits may have the same effect.

In the above description, the case where the buffer amplifier for input signal 124 is provided in the first embodiment has been described. However, the case where the buffer amplifier 124 is provided in the second, third, and fourth embodiments may be adopted. The same effect is achieved.

In the above description, the down converter that inputs RF and outputs IF has been described. In addition, an up-converter that inputs an IF and outputs an RF as shown in FIG. 12 may have the same effect.

Embodiment 7 FIG. The seventh embodiment is similar to the sixth embodiment in that the APDP ring 1 due to fluctuations in the local oscillation power and the like.
It is devised in order to solve problems such as fluctuation of the impedance of the diode ring 120 and the impedance of the diode ring 120. Embodiment 7 is shown in FIG. In the figure, reference numeral 126 denotes an output signal buffer amplifier provided between the RF terminal 32 and the APDP ring 121, which is the same as or equivalent to the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. Parts are given the same reference numerals. FIG. 14 shows a source floor 128 including the FET 104 and the resistor 127 as an example of the buffer amplifier 126. Here, the contacts A and B in FIG. 13 correspond to the contacts A and B in FIG.

Next, the operation will be described. A source floor 128 is provided between the RF terminal 32 and the APDP ring 121 as an example of an output signal buffer amplifier 126. Source floor 1
28 has a low output impedance, close to 50 ohms and 75 ohms. Therefore, electrical connectivity with external circuits is good. Also, since there is isolation characteristics between the input and output terminals, the impedance of the APDP ring 121 cannot be seen from the RF terminal. Therefore, even if the impedance between the terminals of the APDP ring 121 fluctuates due to the fluctuation of the local oscillation power, multiple reflection does not occur between the amplifier and the filter connected before and after.

In the above description, the output signal buffer amplifier 1
Although the source floor 128 has been described as 26, the emitter floor may be used, and a similar effect can be obtained. In addition, other amplifier circuits may have the same effect.

In the above description, the case where the buffer amplifier 126 for output signal is provided in the first embodiment has been described. However, the case where the buffer amplifier 126 is provided in the second, third, and fourth embodiments may be adopted. The same effect is achieved.

In the above description, the upconverter that inputs IF and outputs RF has been described. In addition, a down-converter that inputs RF and outputs IF, as shown in FIG. 15, may have the same effect.

Embodiment 8 FIG. The eighth embodiment is similar to the sixth embodiment in that the APDP ring 1 due to a change in local oscillation power or the like is generated.
It is devised in order to solve problems such as fluctuation of the impedance of the diode ring 120 and the impedance of the diode ring 120. Embodiment 8 is shown in FIG. In the drawing, FIG.
1 and the same or corresponding parts as those in the first embodiment shown in FIG. 1 are denoted by the same reference numerals.

Next, the operation will be described. An input signal buffer amplifier 124 is connected between the RF terminal 32 and the APDP ring 121 by an IF
An output signal buffer amplifier 126 is provided between the terminal 34 and the APDP ring 121. Here, the input signal buffer amplifier 1
24 is an example of an output signal buffer amplifier 126, and the source floor 1 is an example of an output signal buffer amplifier 126.
28 and the like. These circuits have input and output impedances close to 50 ohms and 75 ohms. Therefore, electrical connectivity with external circuits is good. Also, since there is isolation characteristics between the input and output terminals, the IF terminal 3
The impedance of the APDP ring 121 cannot be seen from the RF terminal 4 or the RF terminal 32. Therefore, APDP
Even if the impedance between the terminals of the ring 121 fluctuates, multiple reflection does not occur between amplifiers and filters connected before and after.

In the above description, the buffer amplifiers 124, 12
Although the FET circuit has been described as 6, a transistor circuit may be used to achieve the same effect. In addition, other amplifier circuits may have the same effect.

In the above description, the case where the buffer amplifiers 124 and 126 are provided in the first embodiment has been described. However, even in the case where the buffer amplifiers 124 and 126 are provided in the second, third, and fourth embodiments. Well, the same effect is achieved.

In the above description, the down converter that inputs RF and outputs IF has been described. In addition, an up-converter that inputs an IF and outputs an RF as shown in FIG. 17 may also provide the same effect.

According to the present embodiment, buffer amplifier 12
By providing 4, 126, in terms of impedance,
The RF terminal 32 and the IF terminal 34 can be separated. Therefore, FIG.
As shown in FIG. 6 and FIG. 17, the demultiplexing circuit 103 shown in FIG.
Need not be provided, which has the effect of being more compact.

Embodiment 9 FIG. Another disadvantage of the diode mixer using the APDP ring 101 and the diode ring 120 is that the conversion efficiency is low and the loss is high. The ninth embodiment is designed to solve the problems such as the APDP ring 101 and the diode ring 120. Embodiment 9 is shown in FIG. In the figure, reference numeral 129 denotes an output load resistance, and 130 denotes an operational amplifier, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. .

Generally, a mixer, particularly a diode mixer, specifies an output load of 50 ohms. However, for example, it is assumed that an operational amplifier is used as an IF circuit. Since the operational amplifier assumes a voltage transmission system instead of power transmission,
A 50 ohm terminator does not make sense. Further, the even harmonic mixer has a conversion loss about 1 to 3 dB higher than that of a normal mixer due to the use of second-order mixing. Therefore, in the even harmonic mixer according to the present embodiment, the output load resistor 129 is set to have an impedance higher than 50 ohms, and the output voltage is improved.

Next, the operation will be described. With APDP ring 121
Output load resistance Ro between contact point with IF terminal 32 and ground conductor
ut 129 is connected. And this output load resistance Rout
The voltage Vout across both terminals 129 is amplified by the operational amplifier 130 whose input impedance can be regarded as almost open. As shown in FIG. 19, the voltage Vout across the output load resistor 129 becomes higher as the output load resistor Rout 129 is increased, and converges to a constant value as the output load resistor Rout 129 approaches open. Generally, the operational amplifier 130 has a function of amplifying a voltage between terminals. Therefore, it can be seen that the higher the output load resistance Rout 129, the higher the gain of the mixer. It should be noted here that this does not mean an increase in energy gain, but only an increase in voltage gain.

As a result, the gain of the even harmonic mixer is increased, and there is an effect that, for example, the sensitivity of the receiver is improved.

In the above description, the case where the output load resistor 129 and the operational amplifier 130 are provided in the first embodiment has been described. However, the case where the output load resistor 129 and the operational amplifier 130 are provided in the second embodiment. The same effect may be obtained.

Embodiment 10 FIG. As in the ninth embodiment, the tenth embodiment is a device for improving high conversion loss, which is a disadvantage of the diode mixer. Embodiment 10 is shown in FIG. The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. 1 are denoted by the same reference numerals.

Next, the operation will be described. As in the third embodiment, the active balun 121 also distributes an RF input signal wave in the opposite phase and supplies it to the APDP ring 121. Therefore, since the IF output signal is a differential output,
Output load resistance Rout 129 between chokes 38a and 38b
Are connected. And, this output load resistance Rout 12
The voltage Vout across the terminals 9 is amplified by the operational amplifier 130 whose input impedance can be regarded as almost open. Here, the operational amplifier 130 is operated as a differential amplifier. Other operations are the same as those in the ninth embodiment, and the output load resistance
The effect of increasing the gain of the mixer increases as the Rout 129 increases.

As a result, the gain of the even harmonic mixer is increased, and there is an effect that, for example, the sensitivity of the receiver is improved.

In the above description, the case where the output load resistor 129 and the operational amplifier 130 are provided in the third embodiment has been described, but the case where the output load resistor 129 and the operational amplifier 130 are provided in the fourth embodiment will be described. The same effect can be obtained.

Embodiment 11 FIG. FIG. 21 shows the conversion loss with respect to the local oscillation power of the even harmonic mixer. An ordinary fundamental wave mixer exhibits a saturation characteristic and a stable conversion loss with respect to the local oscillation power is obtained, whereas an even harmonic mixer exhibits a single-peak characteristic with respect to the local oscillation power and is not stable. This means that when the local oscillation power is increased in the APDP 2, both the mixer diodes 1a and 1b
The ON time becomes longer, and finally the mixer diode 1
This is a phenomenon that occurs because both a and 1b are turned on and loses nonlinearity. Therefore, when the local oscillation power fluctuates due to temperature or the like, there is a problem that the loss fluctuates. Embodiment 11
Then, such APDP ring 101 and diode ring 1
The present invention has been devised in order to solve the problem of the even harmonic mixer using the No. 20. Embodiment 11 is shown in FIG.
In the figure, reference numeral 131 denotes a limiter, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

In the even harmonic mixer according to the present embodiment,
A limiter 131 having a characteristic as shown in FIG. 23 is provided between the active balun 102 and the APDP ring 101 to suppress the fluctuation of the local oscillation power. As a result, as shown in FIG. 24, the fluctuation of the local oscillation power is stabilized by the effect of the limiter 131.

Therefore, even if the local oscillation power fluctuates due to factors such as temperature, there is an effect that the conversion loss does not fluctuate and is stabilized.

Further, since a large number of harmonics are generated from the limiter 131, they become spurious components. Therefore, a harmonic suppression filter may be provided at the output of the limiter 131. It has the effect of suppressing spurious components.

In the above description, the first embodiment has the limiter 1
Although the case where 31 is provided is shown, the second embodiment,
A limiter 131 may be provided in 3 and 4, and the same effect is obtained.

Embodiment 12 FIG. In the twelfth embodiment, as in the eleventh embodiment, the present invention has been devised to eliminate the local oscillation power dependency of the conversion loss of the even harmonic mixer using the APDP ring 101 and the diode ring 120. Embodiment 12 is shown in FIG. In the figure, reference numeral 131 denotes a limiter, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

In the even harmonic mixer according to the present embodiment,
A limiter 131 having a characteristic as shown in FIG. 23 is provided between the LO terminal 33 and the active balun 102 to suppress the fluctuation of the local oscillation power. As a result, similar to the eleventh embodiment, the fluctuation of the local oscillation power is stabilized by the effect of the limiter 131.

Therefore, even if the local oscillation power fluctuates due to factors such as temperature, there is an effect that the conversion loss does not fluctuate and stabilizes.

Further, since a large number of harmonics are generated from the limiter 131, they become spurious components. Therefore, a harmonic suppression filter may be provided at the output of the limiter 131. It has the effect of suppressing spurious components.

In the above description, the limiter 1 is added to the first embodiment.
Although the case where 31 is provided is shown, the second embodiment,
A limiter 131 may be provided in 3 and 4, and the same effect is obtained.

Embodiment 13 FIG. In the above-described embodiment, the active balun 102 using a semiconductor element such as the FET 104 distributes light in opposite phases. Therefore, the output of the active balun 102 contains a harmonic component such as 2 fp in addition to the local oscillation wave of the frequency fp. Therefore, when the even harmonic mixer is used as an up-converter, FIG.
As shown in (2), 2 fp occurs near RF (frf), and becomes spurious. The thirteenth embodiment is designed to solve the problem of the even harmonic mixer using the active balun 102. Embodiment 13 is shown in FIG. In the figure, reference numeral 132 denotes a filter, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

Next, the operation will be described. In the even harmonic mixer according to the present embodiment, the active balun 102 and the AP
As shown in FIG.
To suppress harmonics of the active balun 102. As a result, there is an effect that the spurious level output from the even harmonic mixer becomes low.

In the above description, the case where the filter 132 is provided in the first embodiment has been described.
Filters 3 and 4 may be provided with a filter 132, and the same effect is obtained.

In the above description, the case of an up-converter has been described, but a down-converter may be used.
This has an effect of suppressing spurious radiation radiated from the RF terminal 103.

Embodiment 14 FIG. In the even harmonic mixer, the local oscillation wave is doubled by APDP2. Therefore, the local oscillation frequency is half that of the mixer for the fundamental wave operation. When a synthesizer is used as the local oscillator, the channel interval is doubled by multiplication. Therefore, a synthesizer with a half channel interval is required in advance. Usually, a PLL having a PLL configuration is used as a synthesizer, and a channel interval becomes a reference frequency of the PLL. Therefore, when the even harmonic mixer is used, the reference frequency of the PLL is halved. However, the convergence time and noise characteristics of the PLL are better as the reference frequency is higher. Therefore, there is a problem that the use of the even harmonic mixer deteriorates the characteristics of the PLL.

The fourteenth embodiment is designed to solve such a problem of the even harmonic mixer. Embodiment 14 is shown in FIG. In the figure, reference numeral 133 denotes a frequency divider, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

Next, the operation will be described. In the even harmonic mixer according to the present embodiment, a frequency divider 133 is provided between the LO terminal 33 and the active balun 102 to divide a local oscillation wave input from the outside into two, thereby doubling the effect inside the mixer. Is offsetting. Therefore, when viewed from the outside, it operates as if it were a mixer of the fundamental wave operation. As described above, according to this configuration, it is possible to use a local oscillator or a synthesizer similar to the mixer operating in the fundamental wave, and it is possible to suppress the deterioration of the PLL characteristics.

In the above description, the frequency divider 1 is added to the first embodiment.
Although the case where 33 is provided is shown, the second embodiment,
A frequency divider 133 may be provided in 3 and 4, and the same effect is obtained.

Further, since a large number of harmonics are generated from the frequency divider 133, they become spurious components. Therefore, the frequency divider 13
The output of 3 may be provided with a harmonic suppression filter. It has the effect of suppressing spurious components.

Embodiment 15 FIG. As in the fourteenth embodiment, the fifteenth embodiment is a remedy for the problem that the characteristics of the PLL are degraded when an even harmonic mixer is used due to the effect of doubling. Further, here, the frequency divider 133 constituted by an ECL (emitter coupled logic) circuit is used instead of an active balun, focusing on the fact that a differential output is possible. Embodiment 15 is shown in FIG. In the figure, the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG. 1 are denoted by the same reference numerals.

Next, the operation will be described. In the even harmonic mixer according to the present embodiment, as in the fourteenth embodiment, a frequency divider 133 cancels the effect of doubling inside the mixer. Therefore, the same effect as that of the fourteenth embodiment is obtained.
Further, the differential output of the frequency divider 133 is used as a local oscillation wave by the AP.
Since the active balun 102 is supplied to the DP 101, there is no need to provide the active balun 102, and the size can be reduced.

In the above description, the case where the active balun 102 of the first embodiment is replaced with the frequency divider 133 has been described. However, the active balun 102 of the second, third and fourth embodiments is replaced with the frequency divider 133. The same effect may be obtained.

Further, since a large number of harmonics are generated from the frequency divider 133, they become spurious components. Therefore, the frequency divider 13
The output of 3 may be provided with a harmonic suppression filter. It has the effect of suppressing spurious components.

Embodiment 16 FIG. In the sixteenth embodiment, a quadrature mixer is formed by using any two of the even harmonic mixers of the first to fifteenth embodiments. Embodiment 16
Is shown in FIG. In the figure, reference numeral 134 denotes a 90-degree distribution circuit, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

Next, the operation will be described. The RF terminals 32a and 32b of the two even harmonic mixers are connected to a 90-degree distribution circuit 134, and the LO terminal 33 is directly connected. For example,
When a code for quadrature modulation such as QPSK is input to the two IF terminals 34a and 34b, it operates as a quadrature modulator. Here, since any two of the even harmonic mixers of the first to fifteenth embodiments are used, there is an effect that the quadrature mixer can be formed in a small size.

In the above description, the case where the even harmonic mixer of the first embodiment is used has been described.
Even and higher harmonic mixers of 3 and 4 may be used, and the same effect is obtained.

In the above description, the LO terminal 33 is directly connected. However, as shown in FIG. 31, an in-phase or out-of-phase distribution circuit 135 such as an active balun or a Wilkinson distributor may be used. Play.

Embodiment 17 FIG. In the seventeenth embodiment, a quadrature mixer is formed by using any two of the even harmonic mixers of the first to fifteenth embodiments. Embodiment 16
The difference is that the LO side distributes a phase difference of 45 degrees, and the RF terminal uses a distribution circuit 135 having the same or opposite phase. A local oscillation wave having a phase difference of 45 degrees has a phase difference of 90 degrees due to doubling in an even harmonic mixer. FIG. 32 shows a seventeenth embodiment. In the figure, reference numeral 136 denotes a 45-degree distribution circuit, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

Next, the operation will be described. The LO terminals of the two even harmonic mixers are connected to a 45-degree distribution circuit 136, and the RF terminals are connected to a distribution circuit 135 having the same or opposite phase. For example, when a code for quadrature modulation such as QPSK is input to two IF terminals 34a and 34b, it operates as a quadrature modulator. Here, since any two of the even harmonic mixers of the first to fifteenth embodiments are used, there is an effect that the quadrature mixer can be formed in a small size.

In the above description, the case where the even harmonic mixer of the first embodiment is used has been described.
Even and higher harmonic mixers of 3 and 4 may be used, and the same effect is obtained.

Embodiment 18 FIG. The eighteenth embodiment relates to an image rejection mixer in which a 90-degree IF phase shift circuit is connected to the quadrature mixers of the sixteenth to seventeenth embodiments. FIG. 33 shows an eighteenth embodiment. In the figure, 1
Reference numeral 37 denotes a 90-degree phase shift circuit of the IF. The same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the embodiment according to the present invention shown in FIGS. I have.

Next, the operation will be described. The two IF terminals 34a and 34b of the quadrature mixer are connected to a 90-degree phase shift circuit 137 of the IF. Since any two of the even harmonic mixers according to the first to fifteenth embodiments are used, there is an effect that the image rejection mixer can be made compact.
In addition, since it can be configured in a small size, the rotation of the phase at the connection portion can be suppressed, and there is also an effect of increasing the image suppression ratio.

In the above description, the case where the orthogonal mixer of the sixteenth embodiment is used has been described. However, the same effect can be obtained by using the orthogonal mixer of the seventeenth embodiment.

Embodiment 19 FIG. In the nineteenth embodiment, a double balanced mixer is formed by using any two of the even harmonic mixers of the first to fifteenth embodiments. FIG. 34 shows a nineteenth embodiment. In the figure, reference numeral 138 denotes a 180-degree hybrid power divider, and the same or corresponding parts as those in the conventional example shown in FIGS. 38 and 46 and the first embodiment shown in FIG.

Next, the operation will be described. The RF / IF contacts of the APDP ring 138 of the two even harmonic mixers are connected to the 180-degree hybrid power divider 138. R
F input signal wave is converted to 180 degree hybrid power divider 13
8 and supplied to the two APDP rings 101 with a phase difference of 180 degrees. The local oscillation wave is supplied to the two APDP rings 101 by a 90-degree distribution circuit 134 with a phase difference of 90 degrees. Since the local oscillation wave is doubled by the APDP ring 101, it is subjected to frequency mixing with a phase difference of 180 degrees. Therefore, the output signal wave of the IF has the same phase and the two APDP rings 10
1 is output. Therefore, the output signal wave of the IF is output to the terminal of the 180-degree hybrid power divider 138 where the in-phase components are combined.

As described above, according to the present embodiment, the mixer operates as a double balanced mixer. As a result, there is an advantage that a demultiplexing circuit for RF and IF becomes unnecessary, and miniaturization and broadband can be achieved. Further, since any two of the even harmonic mixers according to the first to fifteenth embodiments are used here, there is an effect that a small-sized double balanced mixer can be configured.

In the above description, the case where the even harmonic mixer of the first embodiment is used has been described.
Even and higher harmonic mixers of 3 and 4 may be used, and the same effect is obtained.

Embodiment 20 FIG. Embodiment 1 described above
The even harmonic mixers, quadrature mixers, image rejection mixers, and double-balanced mixers Nos. 1 to 19 may be monolithically integrated on a semiconductor substrate.
To 19 have the same effect. APDP ring 10
1 and the characteristics of the diode ring 120 can be made uniform. Therefore, even harmonic mixers and double balanced mixers
This has the effect of increasing the isolation between the LO terminal and the RF / IF terminal. The quadrature mixer has the effect of improving the modulation and demodulation accuracy. The image rejection mixer has the effect of increasing the image suppression ratio.

Embodiment 21 FIG. FIG. 35 shows a configuration example of a receiving apparatus to which the mixer described in Embodiments 1 to 19 is applied, and FIG. 35 shows an example of a receiving apparatus to which an orthogonal mixer is applied. In the figure, 200 is an antenna, 201 is a low noise amplifier (LN
A) and 202 are band-pass filters (BPFs), 203 is the quadrature mixer of the 16th or 17th embodiment, 204 is a local oscillator, 205 is a low-pass filter, and 206 is a baseband amplifier. Since the mixers described in Embodiments 1 to 19 are applied, there is an effect that the size can be reduced.

Embodiment 22 FIG. FIG. 36 shows a configuration example of a transmission apparatus to which the mixer described in Embodiments 1 to 19 is applied, and FIG. 36 shows an example of a transmission apparatus to which an orthogonal mixer is applied. In the figure, reference numeral 207 denotes a high power amplifier (HPA). Since the mixers described in Embodiments 1 to 19 are applied, there is an effect that the size can be reduced.

Embodiment 23 FIG. This is a phase-locked oscillator to which the mixer described in any of Embodiments 1 to 15 is applied as a phase detector, and FIG. 37 shows a configuration example. In the figure, 208
Is a voltage controlled oscillator (VCO), 209 is a frequency divider, 210 is an even harmonic mixer used as a phase comparator, 211 is a reference oscillator, and 212 is a loop filter. One of the drawbacks of analog phase comparators is the leakage of the DC component. this is,
It is an unbalanced component of the mixer, and this DC component fluctuates depending on temperature and the like. This causes fluctuations in detection sensitivity and loss of synchronization. In the even harmonic mixer 210, the equation
According to (1), the DC component is suppressed and is not output. Therefore, when the even harmonic mixer 210 is applied to the PLL, there is an effect that the operation is stabilized. Further, since the mixer described in any of Embodiments 1 to 19 is applied, there is an effect that the size can be reduced.

[0146]

According to the even harmonic mixer according to the first aspect of the invention, (1) the size can be reduced because no slot line is used, and (2) the active balun allows the connection from the APDP ring (diode ring) to the LO terminal. The effect of suppressing the backflow of spurious components such as higher harmonics and lowering spurious. (3) The active balun does not cause fluctuations in the driving impedance of the APDP ring (diode ring) due to the impedance of the LO side circuit. There are effects that are stabilized.

According to the even harmonic mixer according to the second aspect of the invention, (1) the size can be reduced because the slot line is not used, and (2) the LO terminal and the RF terminal can be changed from the APDP ring (diode ring) by the active balun. The effect of suppressing the backflow of spurious components such as harmonics into the device and reducing the spurs. (3) Due to the active balun, the drive impedance of the APDP ring (diode ring) varies due to the impedance of the LO and RF terminal circuits. There is an effect that the operation is stabilized because there is no such.

According to the even harmonic mixer according to the third aspect of the invention, by providing the buffer amplifier between the active balun and the APDP ring, it is possible to suppress an unbalanced component due to a variation in the output impedance of the active balun. As a result, there is an effect that the isolation between the LO side and the RF / IF side can be increased. Further, the local oscillation power can be increased, and the local oscillation power input from the outside can be reduced to a low level. Also, due to fluctuations in local oscillation power, etc.
Even if the APDP ring fluctuates, the buffer amplifier has the effect of suppressing the fluctuation of the impedance at the LO terminal.

According to the even harmonic mixer according to the fourth aspect of the invention, the input signal buffer amplifier can suppress the frequency ripple of the gain, and has the effect of improving the transmission characteristics. Also, due to the isolation characteristics of the buffer amplifier for input signal, leakage of a local oscillation wave or an IF output signal wave to the RF terminal can be suppressed, which has an effect of reducing spurious.

According to the even harmonic mixer according to the fifth aspect of the present invention, the output signal buffer amplifier can suppress the frequency ripple of the gain, and has the effect of improving the transmission characteristics. Also, due to the isolation characteristics of the output signal buffer amplifier, leakage of a local oscillation wave or an IF output signal wave to the RF terminal can be suppressed, resulting in an effect of reducing spurious.

According to the even harmonic mixer according to the sixth aspect of the present invention, the gain of the even harmonic mixer is increased by using a high output load resistance, and the effect of improving the sensitivity of the receiver is obtained.

According to the even harmonic mixer according to the seventh aspect of the present invention, the gain of the even harmonic mixer is increased by using a high output load resistance, and the effect of improving the sensitivity of the receiver is obtained.

According to the even harmonic mixer of the eighth aspect, even if the local oscillation power fluctuates due to factors such as temperature, the local oscillation power is stabilized by the limiter, and the conversion loss is stabilized without fluctuation. effective.

According to the even harmonic mixer of the ninth aspect, even if the local oscillation power fluctuates due to factors such as temperature, the local oscillation power is stabilized by the limiter, and the conversion loss is stabilized without fluctuation. effective.

According to the even harmonic mixer of the tenth aspect, a filter is provided at the output of the active balun to suppress harmonics of the active balun. As a result, there is an effect that spurious output from the even harmonic mixer becomes low.

According to the even harmonic mixer of the eleventh aspect, the frequency divider is provided between the LO terminal and the active balun,
The local oscillation wave input from the outside is frequency-divided by two to cancel the effect of doubling inside the mixer. Therefore, when viewed from the outside, it operates as if it were a mixer of the fundamental wave operation. As described above, according to this configuration, it is possible to use a local oscillator or a synthesizer similar to the mixer operating in the fundamental wave,
This has the effect of suppressing deterioration of the characteristics of the PLL.

According to the even harmonic mixer of the twelfth aspect, since the diode ring is used, the circuit scale can be reduced.

According to the even harmonic mixer of the thirteenth aspect, the frequency divider is provided at the LO terminal to divide the frequency of the local oscillation wave input from the outside by two, thereby canceling the effect of doubling inside the mixer. ing. Therefore, when viewed from the outside, it operates as if it were a mixer of the fundamental wave operation. As described above, according to this configuration, it is possible to use a local oscillator or a synthesizer similar to the mixer operating in the fundamental wave, and it is possible to suppress the deterioration of the PLL characteristics. Furthermore, since the differential output of the frequency divider is supplied to the APDP ring and an active balun is not required, the size can be reduced.

According to the quadrature mixer according to the fourteenth aspect,
Any 2 of the even harmonic mixers according to the first to thirteenth inventions
Since one is used, there is an effect that it can be configured in a small size.

According to the quadrature mixer according to the fifteenth aspect,
Any 2 of the even harmonic mixers according to the first to thirteenth inventions
Since one is used, there is an effect that it can be configured in a small size.

According to the image rejection mixer according to the sixteenth aspect, since the orthogonal mixer according to the fourteenth or fifteenth aspect is used, there is an effect that it can be made compact. In addition, since it can be configured in a small size, the rotation of the phase at the connection portion can be suppressed, and there is also an effect of increasing the image suppression ratio.

According to the double balanced mixer according to the seventeenth aspect, since any two of the even harmonic mixers according to the first to thirteenth aspects are used, there is an effect that a compact configuration can be achieved. In addition, RF and IF demultiplexing circuits are not required, and
There is an advantage that the band can be widened.

An even harmonic mixer according to an eighteenth aspect of the present invention is characterized in that the even harmonic mixers according to the first to thirteenth aspects are monolithically integrated on a semiconductor substrate to make the characteristics of an APDP ring and a diode ring uniform. Becomes possible. Therefore, the even harmonic mixer has the effect of increasing the isolation between the LO terminal and the RF / IF terminal.

The receiving apparatus according to the nineteenth aspect applies the even harmonic mixer according to the first to thirteenth aspects.
There is an effect that can be downsized.

Since the transmitting apparatus according to the twentieth aspect applies the even harmonic mixer according to the first to thirteenth aspects,
There is an effect that can be downsized.

The phase-locked oscillator according to the twenty-first aspect has an effect of stabilizing the operation by applying the even harmonic mixer to the PLL. Since the even harmonic mixers according to the first to thirteenth aspects are applied, there is an effect that the size can be reduced.

[Brief description of the drawings]

FIG. 1 is a configuration of an even harmonic mixer according to the configuration of Embodiment 1 of the present invention.

FIG. 2 shows a configuration of an active balun.

FIG. 3 is an equivalent circuit of an active balun.

FIG. 4 shows a configuration of an active balun.

FIG. 5 is a configuration of an even harmonic mixer according to the configuration of the second embodiment of the present invention.

FIG. 6 is a configuration of an even harmonic mixer according to a configuration of Embodiment 3 of the present invention.

FIG. 7 shows a configuration of an even harmonic mixer according to the configuration of Embodiment 4 of the present invention.

FIG. 8 shows a configuration of an even harmonic mixer according to a fifth embodiment of the present invention.

FIG. 9 is an example of a buffer amplifier.

FIG. 10 is an explanatory diagram of a frequency ripple.

FIG. 11 shows a configuration of an even harmonic mixer according to the configuration of Embodiment 6 of the present invention.

FIG. 12 shows a configuration of an even harmonic mixer according to a configuration of Embodiment 6 of the present invention.

FIG. 13 shows a configuration of an even harmonic mixer according to a configuration of Embodiment 7 of the present invention.

FIG. 14 is an example of a buffer amplifier.

FIG. 15 shows a configuration of an even harmonic mixer according to a configuration of Embodiment 7 of the present invention.

FIG. 16 shows a configuration of an even harmonic mixer according to Embodiment 8 of the present invention.

FIG. 17 shows a configuration of an even harmonic mixer according to a configuration of Embodiment 8 of the present invention.

FIG. 18 shows a configuration of an even harmonic mixer according to a ninth embodiment of the present invention.

FIG. 19 is an explanatory diagram of an output voltage of an even harmonic mixer with respect to an output load resistance.

FIG. 20 shows a configuration of an even harmonic mixer according to the configuration of the tenth embodiment of the present invention.

FIG. 21 is a conversion loss of an even harmonic mixer with respect to local oscillation power.

FIG. 22 shows a configuration of an even harmonic mixer according to the configuration of Embodiment 11 of the present invention.

FIG. 23 is an explanatory diagram of characteristics of a limiter.

FIG. 24 is an explanatory diagram of characteristics of an even harmonic mixer with a limiter.

FIG. 25 shows a configuration of an even harmonic mixer according to a twelfth embodiment of the present invention.

FIG. 26 is an explanatory diagram of an output spectrum of an even harmonic mixer.

FIG. 27 shows a configuration of an even harmonic mixer according to the configuration of the thirteenth embodiment of the present invention.

FIG. 28 shows a configuration of an even harmonic mixer according to the configuration of Embodiment 14 of the present invention.

FIG. 29 shows a configuration of an even harmonic mixer according to the configuration of Embodiment 15 of the present invention.

FIG. 30 shows a configuration of a quadrature mixer according to a configuration of Embodiment 16 of the present invention.

FIG. 31 shows a configuration of an orthogonal mixer according to a configuration of Embodiment 16 of the present invention.

FIG. 32 shows a configuration of an orthogonal mixer according to a configuration of Embodiment 17 of the present invention.

FIG. 33 shows a configuration of an image rejection mixer according to the configuration of Embodiment 18 of the present invention.

FIG. 34 shows a configuration of a double balanced mixer according to the configuration of Embodiment 19 of the present invention.

FIG. 35 shows a configuration of a receiving apparatus according to the configuration of Embodiment 21 of the present invention.

FIG. 36 shows a configuration of a transmitting apparatus according to Embodiment 22 of the present invention.

FIG. 37 shows a configuration of a phase-locked oscillator according to a configuration of Embodiment 23 of the present invention.

FIG. 38 is a general configuration diagram of an even harmonic mixer.

FIG. 39 is an explanatory diagram of an LO current of the APDP.

FIG. 40 is an explanatory diagram of an LO current of an APDP.

FIG. 41 is an explanatory diagram of the frequency of the even harmonic mixer.

FIG. 42 is a configuration diagram of an even harmonic mixer having a conventional configuration.

FIG. 43 is a configuration diagram of an even harmonic mixer having a conventional configuration.

FIG. 44 is an explanatory diagram of a branching circuit of a harmonic mixer having a conventional configuration.

FIG. 45 is an explanatory diagram of a demultiplexing circuit of an even harmonic mixer having a conventional configuration.

FIG. 46 is a configuration diagram of an even harmonic mixer having a conventional configuration.

FIG. 47 is a diagram illustrating the phase of a wave applied to the APDP.

FIG. 48 is a configuration diagram of an even harmonic mixer having a conventional configuration.

FIG. 49 is a diagram illustrating the phase of a wave applied to a diode.

[Explanation of symbols]

1 mixer diode, 2 anti-parallel diode pair (APDP), 3 branching circuit, 21 band-pass filter (BPF), 22 high-pass filter (HPF), 23 low-pass filter (LPF), 32 RF terminal, 33 LO Terminal, 34 I
F terminal, 35 open stub, 36 short stub,
37 RF choke, 38 DC cut, 80 slot line, 81 coplanar line, 82 wire, 101 APDP
Ring, 102 active balun, 103 demultiplexer, 104 FET, 105 resistor, 106, 107 and 108 DC cut capacitor, 109 RF choke inductor, 115 output terminal, 110 Gate-source capacitance Cgs, 111 drain resistance Rds, 112 current source, 113 load resistance, 114 internal resistance of power supply, 11
6 Matching circuit, 120 Diode ring, 121 Active balun, 122 Buffer amplifier, 123 Common source FET, 124 Buffer amplifier, 125 Common gate FE
T, 126 buffer amplifier, 127 resistance, 128 source floor, 129 output load resistance, 130 operational amplifier, 131 limiter, 132 filter, 133 divider, 134 90 degree distribution circuit, 135 distribution circuit, 13
645 degree distribution circuit, 137 90 degree phase shift circuit, 138
180 degree hybrid power divider, 200 antennas (A
NT), 201 low noise amplifier (LNA), 202 band pass filter (BPF), 203 quadrature mixer, 204 local oscillator, 205 low pass filter (LPF), 206 baseband amplifier (AMP), 207 high power amplifier (HPA) ), 2
08 voltage controlled oscillator (VCO), 209 frequency divider, 210
Even harmonic mixer, 211 reference oscillator, 212 loop filter.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification number Agency reference number FI Technical indication H04B 1/26 H04B 1/26 J (72) Inventor Kenichi Tajima 2-2-2 Marunouchi, Chiyoda-ku, Tokyo No. 3 Mitsubishi Electric Corporation (72) Inventor Akio Iida 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation

Claims (21)

[Claims] 1. A local oscillation wave is inputted from an input terminal, and the first
An active balun for outputting an output signal and a second output signal, and an anti-parallel diode pairing for inputting the first output signal and the second output signal and inputting and outputting an input signal wave and an output signal wave Wherein the active balun includes first and second resistors connected to a ground conductor at a high frequency, and the first resistor connected to a drain (or a collector) of the active balun. And a transistor whose input terminal is connected to the gate (or base) at a high frequency, respectively. The anti-parallel diode pairing comprises connecting diodes of opposite polarity in parallel. Anti-parallel diode pairs are connected in a ring shape, and at those connection points, the first connection point is connected to the ground conductor and opposed to the first connection point. The input signal wave and the output signal wave are input / output from a second connection point, a third connection point is connected to a drain (or a collector) of the transistor, and a fourth connection point is a source (or a source) of the transistor. Even harmonic mixer connected to the emitter). 2. A first oscillator which receives a local oscillation wave from a first input terminal and outputs a first output signal and a second output signal.
An active balun, a second active balun for inputting a radio frequency signal from a second input terminal and outputting a third output signal and a fourth output signal, the first output signal and the second output balun. Output signal, the third output signal and the fourth output signal.
And an anti-parallel diode pairing for inputting and outputting an input signal wave and an output signal wave. The first active balun is connected to a ground conductor at a high frequency. The first and second resistors, the first resistor is connected to a drain (or a collector), the second resistor is connected to a source (or an emitter), and the input terminal is connected to a gate (or a base). A first transistor connected to the second active balun, a third resistor connected to the ground conductor at a high frequency, a fourth resistor connected to the ground conductor, and the third resistor connected to a drain (or a collector). A second transistor, wherein the fourth resistor is connected to a source (or an emitter) and the input terminal is connected to a gate (or a base) at a high frequency. In the real diode pairing, four antiparallel diode pairs formed by connecting diodes having opposite polarities in parallel are connected in a ring shape, and at those connection points, a first connection point is connected to the drain (or the drain) of the second transistor. Collector, a second connection point facing the first connection point is connected to the source (or emitter) of the second transistor, and the third connection point is connected to the drain (or emitter) of the first transistor. Collector, and a fourth connection point connected to the source (or emitter) of the first transistor. 3. A first buffer amplifier is provided between an output terminal for outputting a first output signal of the active balun and the anti-parallel diode pairing, and outputs a second output signal of the active balun. 3. The even harmonic mixer according to claim 1, wherein a second buffer amplifier is provided between an output terminal and the anti-parallel diode pairing. 4. The even-numbered amplifier according to claim 1, wherein a buffer amplifier is provided between an input terminal for inputting an input signal wave to the anti-parallel diode pairing and the anti-parallel diode pairing. Harmonic mixer. 5. The buffer amplifier according to claim 1, wherein a buffer amplifier is provided between an output terminal for outputting an output signal wave from the anti-parallel diode pairing and the anti-parallel diode pairing. Even harmonic mixer. 6. A load resistance exceeding 50 ohms is connected between a ground terminal and a contact between an output terminal for outputting an output signal wave from the anti-parallel diode pairing and the anti-parallel diode pairing, and 2. The even harmonic mixer according to claim 1, further comprising an operational amplifier for amplifying a voltage between both ends of said load resistor. 7. An operational amplifier for connecting a load resistance exceeding 50 ohms between a first connection point and a second connection point of the anti-parallel diode pairing, and further amplifying a voltage across the load resistance. Wherein the output of the operational amplifier is an intermediate frequency output.
The even harmonic mixer described. 8. The even harmonic mixer according to claim 1, further comprising a limiter for suppressing amplitude fluctuation between the active balun and the anti-parallel diode pairing. 9. The even harmonic mixer according to claim 1, further comprising a limiter for suppressing amplitude fluctuation between an input terminal of the local oscillation wave and the active balun. 10. The even harmonic mixer according to claim 1, further comprising a filter provided between said active balun and said anti-parallel diode pairing to suppress a second harmonic of a local oscillation wave. 11. The even harmonic mixer according to claim 1, wherein a frequency divider is provided between an input terminal of the local oscillation wave and the active balun. 12. In place of the anti-parallel diode pairing, inputting the first output signal and the second output signal, inputting and outputting an input signal wave and an output signal wave,
12. The even harmonic mixer according to claim 1, further comprising a diode ring in which four diodes are connected in a ring shape. 13. A frequency divider that receives a local oscillation wave from an input terminal, divides the frequency, and outputs a first output signal and a second output signal, instead of the active balun. The even harmonic mixer according to claim 1 or 2, wherein 14. A divider comprising two even harmonic mixers according to claim 1, further comprising: a distributor for distributing a local oscillation wave in the same phase or an opposite phase; A quadrature mixer including a 90-degree phase shift circuit that distributes or combines the phase differences. 15. A 45-degree phase shift circuit comprising two even harmonic mixers according to claim 1, further comprising: a 45-degree phase shifter for distributing a local oscillation wave with a phase difference of approximately 45 degrees; A quadrature mixer including a distribution / combination circuit for distributing or combining in phase or opposite phase. 16. An image rejection mixer comprising: the quadrature mixer according to claim 14; and a 90-degree phase shifter that distributes or combines the intermediate frequency signal with a phase difference of approximately 90 degrees. 17. A 90-degree phase shifter comprising two even harmonic mixers according to claim 1, further comprising: a 90-degree phase shifter for distributing a local oscillation wave with a phase difference of approximately 90 degrees; A double-balanced mixer including a 180-degree hybrid power divider for distributing and synthesizing an intermediate frequency signal in the same phase and the opposite phase. 18. The even harmonic mixer according to claim 1, wherein the anti-parallel diode pairing or the diode ring is monolithically integrated. 19. A receiving device comprising the even harmonic mixer according to claim 1. 20. A transmission device comprising the even harmonic mixer according to claim 1. 21. A phase locked oscillator using the even harmonic mixer according to claim 1 as a phase detector.