JPH0393189A - Manufacture of thin film el element - Google Patents
Manufacture of thin film el elementInfo
- Publication number
- JPH0393189A JPH0393189A JP1228552A JP22855289A JPH0393189A JP H0393189 A JPH0393189 A JP H0393189A JP 1228552 A JP1228552 A JP 1228552A JP 22855289 A JP22855289 A JP 22855289A JP H0393189 A JPH0393189 A JP H0393189A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- emitter layer
- manufacturing
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 abstract description 2
- 229910052772 Samarium Inorganic materials 0.000 abstract description 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】 （３） （２） 産業上の利用分野 本発明は薄膜ＥＬ素子の製造方法に関するものである。[Detailed description of the invention] (3) (2) Industrial applications The present invention relates to a method for manufacturing a thin film EL device.
従来の技術
薄膜ＥＬ素子は自己発光素子であり、また、薄型の面状
発光素子である等の優れた利点を生かして、モノクロデ
ィスプレイパネルの分野を中心に応用が進んでいる。2. Description of the Related Art Thin film EL devices are self-luminous devices, and their applications are progressing mainly in the field of monochrome display panels, taking advantage of their excellent advantages such as being thin planar light emitting devices.
ところが実用レベルに達しているのは、ＥＬ発光体層に
ＺｎＳ：ＭｎやＺｎＳ ： Ｔｂを用いたような、Ｚｎ
ＳをＥＬ発光母体とするものだけである。However, Zn materials such as those using ZnS:Mn or ZnS:Tb for the EL light emitting layer have reached a practical level.
It is only one in which S is used as an EL emission matrix.
このため、他のＥＬ発光母体を用いる研究開発が活発に
行なわれ、その結果、ＣａＳやＳｒＳをＥＬ発光母体に
用いたもの、例えば、ＣａＳ ： Ｅｕ．ＳｒＳ：Ｃｅ
等をＥＬ発光体層に用いたもので、比較的高輝度のＥＬ
発光が得られた。For this reason, research and development using other EL luminescent materials has been actively conducted, and as a result, products using CaS and SrS as EL luminescent materials, such as CaS:Eu. SrS:Ce
etc. are used in the EL light emitting layer, and it is a relatively high-brightness EL
Luminescence was obtained.
以下、図面を参照しながら、上述したようなＣａＳやＳ
ｒＳをＥＬ発光母体に用いた従来の薄膜ＥＬ素子の製造
方法について説明する。Hereinafter, with reference to the drawings, the CaS and S
A method for manufacturing a conventional thin film EL device using rS as an EL light emitting matrix will be described.
第４図は従来の製造方法による薄膜ＥＬ素子の一部断面
図を示し、第５図は第４図の薄膜ＥＬ素子のＥＬ発光体
層のＸ線回折パターンを示したものである。FIG. 4 shows a partial cross-sectional view of a thin film EL device produced by a conventional manufacturing method, and FIG. 5 shows an X-ray diffraction pattern of the EL light emitter layer of the thin film EL device of FIG.
第４図において、４１は透光性基板、４２は透明電極，
４３は第一誘電体層、４４はＥＬ発光体層、４５は第二
誘電体層、４６は背面電極である。In FIG. 4, 41 is a transparent substrate, 42 is a transparent electrode,
43 is a first dielectric layer, 44 is an EL light emitter layer, 45 is a second dielectric layer, and 46 is a back electrode.
第４図に示すように、まず、ガラスあるいは石英等から
なる透光性基板４１上に酸化インジウム錫（ Ｉｎｄｉ
ｕｍ Ｔｉｎ Ｏｘｉｄｅ ：以下、ＩＴＯと記す。）
等の透明導電層を形成した後に、フォトリソグラフィー
によりストライプ状等のバターニングされた透明電極４
２を形戒する。As shown in FIG. 4, first, indium tin oxide (Indi
um Tin Oxide: Hereinafter referred to as ITO. )
After forming a transparent conductive layer such as, a transparent electrode 4 patterned into a stripe shape or the like by photolithography.
2 is a form of precept.
次に、透光性基板４１上に、Ｓｉ０２等からなる第一誘
電体層４３を高周波マグネトロンスパッタ装置（以下、
ＲＦスパッタ装置と記す。）で形成し、そして、ＣａＳ
： ＥｕあるいはＳ ｒＳ ： Ｃｅ等からなるＥＬ
発光体層４４を電子線蒸着装置〈以下、ＥＢ蒸着装置と
記す。）で基板温度５００℃程度で形成し、さらに、Ａ
ｔ ｔｏｓ等からなる第二誘電体層４５をＲＦスパッタ
装置で形成する。Next, a first dielectric layer 43 made of Si02 or the like is deposited on the transparent substrate 41 using a high frequency magnetron sputtering device (hereinafter referred to as
It will be referred to as an RF sputtering device. ), and CaS
: Eu or S rS : EL consisting of Ce, etc.
The light emitting layer 44 is formed using an electron beam evaporation device (hereinafter referred to as an EB evaporation device). ) at a substrate temperature of about 500°C, and then
A second dielectric layer 45 made of t tos or the like is formed using an RF sputtering device.
最後に、透光性基板４１上に、Ａｔ等の金属導電層を形
成し、フォトリソグラフィーにより、透明電極４２と互
いに交差するようにストライブ状等のパターニングされ
た背面電極４６を形戒する。Finally, a metal conductive layer such as At is formed on the transparent substrate 41, and a back electrode 46 patterned in a stripe shape or the like so as to intersect with the transparent electrode 42 is formed by photolithography.
以上のようにして、ＣａＳやＳｒＳをＥＬ発光母体に用
いた薄膜ＥＬ素子が製造される。In the manner described above, a thin film EL element using CaS or SrS as an EL light emitting matrix is manufactured.
発明が解決しようとする課題
しかしながら上記のような製造方法では、ＥＬ発光体層
の結晶性が悪かった。すなわち、ＥＬ発光体層が十分に
柱状結晶化しておらず、第５図に示すＸ線回折パターン
から明らかなように、高輝度を示す（２００）あるいは
（２２０）への配向が十分でなかった。Problems to be Solved by the Invention However, in the above manufacturing method, the crystallinity of the EL light emitting layer was poor. That is, the EL emitter layer was not sufficiently columnar crystallized, and as is clear from the X-ray diffraction pattern shown in FIG. 5, the orientation toward (200) or (220), which exhibits high brightness, was not sufficient. .
その結果として、製造された薄膜ＥＬ素子が低輝度にな
るという欠点を有していた。As a result, the produced thin film EL device had the disadvantage of low brightness.
本発明は上記欠点に鑑み、ＥＬ発光母体がＣａＳあるい
はＳｒＳのうち少なくとも１種類を含むＥＬ発光体層の
結晶性を向上させ、輝度の高い、信頼性の高い薄膜ＥＬ
素子の製造方法を提供するものである。In view of the above drawbacks, the present invention improves the crystallinity of an EL light emitting layer whose EL light emitting matrix contains at least one type of CaS or SrS, thereby producing a thin film EL with high brightness and high reliability.
A method for manufacturing an element is provided.
課題を解決するための手段
上記課題を解決するために、本発明の薄膜ＥＬ素子の製
造方法は、透光性基板上に透明電極，第一誘電体層．Ｅ
Ｌ発光母体がＣａＳあるいはＳｒＳのうち少なくとも１
種類を含むＥＬ発光体層，第二誘電体層，背面電極が順
次積層され形成される薄膜ＥＬ素子の製造方法において
、前記ＥＬ発光体層の形成に引き続いて真空をやぶらず
に基板力ｕ熱を行なうことにり、前記ＥＬ発光体層の熱
処理を４００℃〜６００℃で２時間以下で行なう工程を
含むことから構成されている。Means for Solving the Problems In order to solve the above problems, the method for manufacturing a thin film EL device of the present invention includes a transparent electrode, a first dielectric layer, and the like on a light-transmitting substrate. E
L-emitting host is at least one of CaS or SrS
In a method for manufacturing a thin film EL device in which an EL light emitting layer, a second dielectric layer, and a back electrode are sequentially laminated, the substrate is heated by applying heat to the substrate without breaking the vacuum, following the formation of the EL light emitting layer. The method includes a step of heat-treating the EL light emitting layer at 400° C. to 600° C. for 2 hours or less.
作用
この構成によって、ＥＬ発光体層を熱処理効果により十
分に柱状結晶化し、（２００）あるいは（２２０）への
配向を相対的に強くすることができる。Effect: With this configuration, the EL light emitter layer can be sufficiently columnar crystallized by the heat treatment effect, and the (200) or (220) orientation can be relatively strengthened.
その結果、高輝度、かつ信頼性の高い薄膜ＥＬ素子が製
造できる。As a result, a thin film EL element with high brightness and high reliability can be manufactured.
実施例
本発明の一実施例について、図面を用いて簡単に説明す
る。第２図は本発明の薄膜ＥＬ素子の製造方法により製
作した薄１！ＩＩＥＬ素子の平面図を示し、第１図は第
２図のＡ−Ｂにおける断面の製造工程を示す図である。Embodiment An embodiment of the present invention will be briefly described with reference to the drawings. FIG. 2 shows a thin film EL device manufactured by the method of manufacturing a thin film EL device of the present invention. A plan view of the IIEL element is shown, and FIG. 1 is a cross-sectional view taken along line AB in FIG. 2, showing the manufacturing process.
第３図は本発明の薄膜ＥＬ素子の製造方法により製作し
た薄膜ＥＬ素子のＥＬ発光体層のＸ線回折スペクトルで
ある。FIG. 3 is an X-ray diffraction spectrum of the EL emitter layer of a thin film EL device manufactured by the method for manufacturing a thin film EL device of the present invention.
第１図，第２図において、１１は透光性基板、１２は透
明電極、１３は第一誘電体層、１４はＥＬ発光体層、１
５は第二誘電体層、１６は背面電極である。1 and 2, 11 is a transparent substrate, 12 is a transparent electrode, 13 is a first dielectric layer, 14 is an EL light emitting layer, 1
5 is a second dielectric layer, and 16 is a back electrode.
第１図に示すように、まず、ガラスあるいは石英等から
なる透光性基板ｌｌ上に、直流バイアススパッタ装置（
以下、ＤＣスパッタ装置と記す。）により厚さ０．１μ
ｍ程度のＩＴＯ等の透明導電層を形成した後、フォトレ
ジストをマスクとしてウェットエッチング装置により、
ストライブ状に透明電極１２を形威する（第１図（ａ）
）。As shown in FIG. 1, first, a DC bias sputtering device (
Hereinafter, this will be referred to as a DC sputtering device. ), the thickness is 0.1μ
After forming a transparent conductive layer such as ITO with a thickness of about 100 yen, it is etched using a wet etching device using a photoresist as a mask.
The transparent electrode 12 is shaped like a stripe (Fig. 1(a)).
).
次に、透光性基板１１上にＲＦスパッタ装置より厚さ０
．２μｍ程度のＴａ２０５からなる第一誘電体層１３を
形成した〈第１図（ｂ）〉上に、ＥＢ蒸着装置により基
板温度５００℃で厚さｌμｍ程度のＳ ｒＳ ： Ｃｅ
＋ ＳｍからなるＥＬ発光体層１４を形成する（第１図
（Ｃ））。このときイオウの再蒸発を補うためにイオウ
の蒸発を同時に別のるつぼ等から行なう方が望ましい。Next, a film with a thickness of 0 is deposited on the transparent substrate 11 using an RF sputtering device.
．． On the first dielectric layer 13 made of Ta205 with a thickness of about 2 μm (FIG. 1(b)), SrS:Ce with a thickness of about 1 μm is deposited using an EB evaporation apparatus at a substrate temperature of 500°C.
An EL light emitting layer 14 made of +Sm is formed (FIG. 1(C)). At this time, it is preferable to simultaneously evaporate sulfur from another crucible or the like in order to compensate for the re-evaporation of sulfur.
ここで、ＥＬ発光体層１４の結晶性を向上させるために
熱処理をする。すなわち、ＥＬ発光体層ｌ４の形成後、
真空をやぶらずに基板加熱を継続し、基板温度５００℃
で１時間ＥＬ発光体層１４を熱処理する。Here, heat treatment is performed to improve the crystallinity of the EL light emitting layer 14. That is, after forming the EL light emitter layer l4,
Continue heating the substrate without breaking the vacuum, and the substrate temperature reaches 500℃.
The EL light emitter layer 14 is heat-treated for one hour.
そして、ＲＦスパッタ装置により厚さ０．２μｍ程度の
Ａｅ ２０．からなる第二誘電体層１５を形成する（第
１図（イ））。Then, Ae 20. A second dielectric layer 15 is formed (FIG. 1(a)).
最後に、ＤＣスパッタ装置により厚さ０．１μｍ程度の
Ａｅ−Ｓｉ等からなる金属導電層を形威し、フォトリソ
グラフィーにより、透明電極１２と互いに交差するよう
にドライエッチング装置により、ストライブ状に背面電
極１６を形成する（第１図（ｅ））。Finally, a metal conductive layer made of Ae-Si or the like is formed with a thickness of about 0.1 μm using a DC sputtering device, and is formed into strips by photolithography using a dry etching device so as to cross each other with the transparent electrode 12. A back electrode 16 is formed (FIG. 1(e)).
以上のようにして、第２図に示すような、薄膜ＥＬ素子
が製造される。In the manner described above, a thin film EL element as shown in FIG. 2 is manufactured.
以上のように本実施例によれば、ＥＬ発光体層形威後、
基板加熱を継続することにより、製作方法も簡単にＥＬ
発光体層の結晶形を向上させることができる。As described above, according to this embodiment, after the EL luminescent layer shape,
By continuing to heat the substrate, the manufacturing method is simple.
The crystal shape of the light emitter layer can be improved.
なお、本実施例においては基板偏度制御の簡便性を考慮
して、ＥＬ発光体層の形成時基板温度と熱処理温度とを
同程度の５００℃程度にしたが、特別に限定されたもの
ではない。熱処理温度は４００℃〜６００℃が良い。す
なわち、熱処理温度が低すぎるとＥＬ発光体層の結晶性
を向上させる効果がなくなり、また、熱処理温度が高す
ぎると堆積層が剥離する。さらに、熱処理時間について
も同様に、熱処理時間が短かいと、結晶性向上の効果が
少なくなり、一方、熱処理時間を長くしても結晶性向上
効果が飽和したり、堆積層が剥離したりする。熱処理時
間は２時間以下が良い。Note that in this example, the substrate temperature and the heat treatment temperature during the formation of the EL light emitting layer were set at about the same level, about 500°C, in consideration of the ease of controlling the substrate bias, but there is no particular limitation. do not have. The heat treatment temperature is preferably 400°C to 600°C. That is, if the heat treatment temperature is too low, the effect of improving the crystallinity of the EL luminescent layer is lost, and if the heat treatment temperature is too high, the deposited layer will peel off. Furthermore, regarding the heat treatment time, if the heat treatment time is short, the effect of improving crystallinity will be reduced, while if the heat treatment time is increased, the effect of improving crystallinity will be saturated or the deposited layer will peel off. . The heat treatment time is preferably 2 hours or less.
また、本実施例ではＥＬ発光体層としてＳｒＳ：Ｃｅ，
Ｓｍを用いたが、ＥＬ発光体層のＥＬ発光母体がＣａＳ
あるいはＳｒＳのうち少なくともｌＩＭを含むものであ
れば何でもよい。すなわち、付活材料にも限定されるも
のでもなく、ＣａＳ ：ＥｕでもＳｒＳ：ＳｍでもＣａ
，（Ｓ ｒ＋−．Ｓ ： Ｐ ｒ（０＜ｘｘ＜１）でも
よい。In addition, in this example, SrS:Ce,
Although Sm was used, the EL luminescent matrix of the EL luminescent layer was CaS.
Alternatively, any SrS containing at least lIM may be used. In other words, it is not limited to the activation material, and may be CaS:Eu, SrS:Sm or Ca.
, (S r+-.S : P r (0<xx<1).
さらに、本実施例では誘電体層としてＴａ２０５とＡｅ
２０３とを用いたが、特別に限定されるものではなく
、Ｓ ｉ０２，Ｓ ｉ３Ｎ４，Ｓ ｉＯＮ，Ａｅ Ｎ．
ＰＺＴなどでもよいことは言うまでもない。Furthermore, in this example, Ta205 and Ae are used as the dielectric layer.
203 was used, but the invention is not particularly limited to S i02, S i3N4, S iON, Ae N.203.
Needless to say, PZT or the like may also be used.
発明の効果
以上のように本発明は、透光性基板上に、透明電極、第
一誘電体層、ＥＬ発光母体がＣａＳあるいはＳｒＳのう
ち少なくとも１種類を含むＥＬ発光体層、第二誘電体層
、背面電極が順次積層され形成される薄膜ＥＬ素子の製
造方法において、前記ＥＬ発光体層の形成に引き続いて
、前記発光体層の熱処理を行なう工程を含むことからな
る構成により、前紀ＥＬ発光体層を十分に柱状結晶化し
、（２００）あるいは（２２０）への配向を相対的に強
くすることができる。Effects of the Invention As described above, the present invention provides a transparent electrode, a first dielectric layer, an EL luminescent layer containing at least one of CaS or SrS as an EL luminescent matrix, and a second dielectric material on a transparent substrate. In the method for manufacturing a thin film EL device in which a layer and a back electrode are sequentially laminated, the method includes a step of heat-treating the light emitting layer subsequent to the formation of the EL light emitting layer. The light emitting layer can be sufficiently columnar crystallized to make the (200) or (220) orientation relatively strong.
その結果、高輝度の薄膜ＥＬ素子が製造でき、なおかつ
、製作方法も簡単であり、その実用的効果は大なるもの
である。As a result, a thin film EL element with high brightness can be manufactured, and the manufacturing method is simple, and its practical effects are great.
第１図は本発明の一実施例における薄膜ＥＬ素子の製造
方法の製造工程を示す図、第２図は本発明の一実施例に
より製作された薄膜ＥＬ素子の平面図、第３図は本発明
の一実施例により製作された薄膜ＥＬ素子のＥＬ発光体
層のＸ線回折スペクトル図、第４図は従来の製造方法に
よる薄膜ＥＬ素子の一部断面図、第５図は従来の製造方
法による薄膜ＥＬ素子のＥＬ発光体層のＸ線回折スペク
ト図である。
１１・・・・・・透光性基板、１２・・・・・・透明電
極、１３・・・・・・第一誘電体層、１４・・・・・・
ＥＬ発光体層、１５・・・・・・第二誘電体層、１６・
・・・・・背面電極。FIG. 1 is a diagram showing the manufacturing process of a method for manufacturing a thin film EL device according to an embodiment of the present invention, FIG. 2 is a plan view of a thin film EL device manufactured according to an embodiment of the present invention, and FIG. An X-ray diffraction spectrum diagram of the EL emitter layer of a thin film EL device manufactured according to an embodiment of the invention, FIG. 4 is a partial cross-sectional view of a thin film EL device manufactured by a conventional manufacturing method, and FIG. 5 is a diagram of a conventional manufacturing method. FIG. 2 is an X-ray diffraction spectrum diagram of an EL emitter layer of a thin film EL device according to the present invention. 11... Transparent substrate, 12... Transparent electrode, 13... First dielectric layer, 14...
EL light emitter layer, 15... second dielectric layer, 16.
...Back electrode.
Claims (3)
発光体層，第二誘電体層，背面電極が順次積層され形成
される薄膜ＥＬ素子の製造方法において、前記ＥＬ発光
体層の形成に引き続いて、前記ＥＬ発光体層の熱処理を
行なう工程を含むことを特徴とする薄膜ＥＬ素子の製造
方法。(1) Transparent electrode, first dielectric layer, EL on a transparent substrate
A method for manufacturing a thin film EL device in which a light emitter layer, a second dielectric layer, and a back electrode are sequentially laminated, including the step of heat-treating the EL light emitter layer subsequent to the formation of the EL light emitter layer. A method for manufacturing a thin film EL device, characterized in that:
ｒＳのうち少なくとも１種類を含むことを特徴とする特
許請求の範囲第１項記載の薄膜ＥＬ素子の製造方法。(2) The EL luminescent matrix of the EL luminescent layer is CaS or S
2. The method for manufacturing a thin film EL device according to claim 1, wherein the method includes at least one type of rS.
℃で、前記熱処理の時間が２時間以下であることを特徴
とする特許請求の範囲第１項記載の薄膜ＥＬ素子の製造
方法。(3) The temperature of heat treatment of the EL light emitter layer is 400°C to 600°C
2. The method of manufacturing a thin film EL device according to claim 1, wherein the heat treatment time is 2 hours or less at .degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1228552A JPH0393189A (en) | 1989-09-04 | 1989-09-04 | Manufacture of thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1228552A JPH0393189A (en) | 1989-09-04 | 1989-09-04 | Manufacture of thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0393189A true JPH0393189A (en) | 1991-04-18 |
Family
ID=16878162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1228552A Pending JPH0393189A (en) | 1989-09-04 | 1989-09-04 | Manufacture of thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0393189A (en) |
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