JPH0369117A - Manufacturing apparatus of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a drift due to a difference of specific gravity between an atmosphere gas inside a core tube and an introduced gas and to reduce the irregularity of oxidation amount or the irregularity of impurity diffusion amount by installing the following: the core tube whose one end has been opened and the other end of which has been sealed; and a gas introduction tube which has been inserted into the core tube from the open side and which has been bent toward the open side at the other end side. CONSTITUTION:A manufacturing apparatus, of a semiconductor device, which is used for heat treatment of a semiconductor substrate 3 inside a core tube 2 is provided with the following: the core tube 2 whose one end has been opened and the other end of which has been sealed; and a gas introduction tube 1 which has been inserted into the core tube 2 from the open side and which has been bent toward the open side at the other end side. Thereby, since an introduced gas is passed inside the gas introduction tube 1 exposed to a high-temperature atmosphere, temperature difference from an atmosphere gas inside a furnace can be reduced. Consequently, it is possible to prevent a drift due to the difference of specific gravity between the gases and to reduce the irregularity of oxidation amount inside a semiconductor substrate face and between adjacent semiconductor substrates after a heat treatment or the irregularity of impurity diffusion amount.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a semiconductor substrate heat treatment apparatus.

[Conventional technology]

Conventionally, this type of heat treatment equipment has been designed to directly introduce low-temperature gas (approximately 20''C > 800°C to 1000'C) into the inside of the furnace tube from the back of the furnace tube 2, as shown in the cross-sectional view of Fig. 4. The semiconductor substrate 3 placed on the semiconductor substrate support stand 4 was subjected to heat treatment.

[Problem to be solved by the invention]

The conventional heat treatment equipment described above has a structure in which low-temperature introduced scum is directly introduced into the reactor core tube in a high-temperature atmosphere.
This method has the drawback of causing drift due to the difference in specific gravity between the atmospheric gas in the furnace tube and the introduced gas, which causes variations in the amount of oxidation or the amount of impurity diffusion within the surface of the semiconductor substrate after heat treatment and between adjacent semiconductor substrates.

[Means to solve the problem]

The present invention relates to a semiconductor device manufacturing apparatus in which a semiconductor substrate is heat-treated in a furnace core tube, and a furnace core tube that is open at one end and sealed at the other end; This is a semiconductor device manufacturing apparatus having a gas inlet pipe which is bent toward the side.

〔Example〕

Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. FIG. 2 is a sectional view taken along line A--A in FIG. 1. The furnace core tube 2 used in this embodiment has one end open and the other end sealed. The gas introduction tube 1 is inserted through this opening, sealed and bent in the opposite direction. By providing the gas introduction tube 1 inside the furnace core tube 2, the introduced gas passes through the gas introduction tube 1 exposed to a high-temperature atmosphere, so that the temperature difference with the furnace atmosphere gas can be reduced.

FIG. 3 is a sectional view of another embodiment of the present invention, taken at the same position as FIG. By providing a plurality of protrusions around the gas inlet tube 1 to increase the surface area, the temperature difference between the atmosphere inside the gas Sakai inlet tube 1 and the atmosphere inside the furnace core tube 2 is further reduced, and the temperature difference between the furnace atmosphere gas and the introduced gas is reduced. can be made even smaller.

〔Effect of the invention〕

As explained above, in the present invention, by providing the gas introduction tube inside the furnace core tube, the temperature inside the gas introduction tube can be made equal to the temperature of the atmosphere inside the furnace. As a result, the introduced gas flowing through the gas introduction tube has a temperature equal to that of the furnace atmosphere, which prevents uneven flow due to differences in gas specific gravity, and prevents oxidation within the semiconductor substrate surface and between adjacent semiconductor substrates after heat treatment. This has the effect of reducing variations in the amount or variations in the amount of impurity diffusion.

[Brief explanation of drawings]

FIG. 1 is a longitudinal cross-sectional view showing one embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line A-A in FIG. 1, FIG. 3 is a cross-sectional view of another embodiment of the present invention, and FIG. FIG. 2 is a cross-sectional view of a conventional manufacturing device. DESCRIPTION OF SYMBOLS 1... Gas introduction pipe, 2... Furnace tube, 3... Semiconductor substrate 4... Semiconductor substrate support stand.

Claims (1)

[Claims] In a semiconductor device manufacturing apparatus that heat-treats a semiconductor substrate in a furnace core tube, the furnace core tube has one end opened and the other end sealed, and the furnace core tube is inserted from the opening side and the other end is turned toward the opening side. 1. A semiconductor device manufacturing apparatus comprising a bent gas introduction pipe.