JPH0361333U - - Google Patents
Info
- Publication number
- JPH0361333U JPH0361333U JP12285289U JP12285289U JPH0361333U JP H0361333 U JPH0361333 U JP H0361333U JP 12285289 U JP12285289 U JP 12285289U JP 12285289 U JP12285289 U JP 12285289U JP H0361333 U JPH0361333 U JP H0361333U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- 2deg
- field effect
- effect transistor
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の実施例に係る２ＤＥＧ構造を
有する化合物電界効果トランジスタを示す断面図
、第２図は同じくそのゲートエツジ近傍における
エネルギー帯を示すグラフ図、第３図ａは従来の
２ＤＥＧ構造を有する化合物電界効果トランジス
タのソース及びゲートエツジ近傍を示す模式的断
面図、第３図ｂは同じくそのソース近傍における
エネルギー帯を示すグラフ図、第３図ｃは同じく
そのゲートエツジ近傍におけるエネルギー帯を示
すグラフ図、第４図はチヤネルポテンシヤルと２
ＤＥＧ濃度との関係を示すグラフ図、第５図はチ
ヤネルポテンシヤルとトンネル電流との関係を示
すグラフ図である。
１，１６……ソース、２，１４……ゲート、３
……ドレイン、４，１５……キヤツプ層、５，１
３……ドナー供給層、６，１２……スペーサ層、
７，１１……チヤネル層、８……ＧａＡｓバツフ
ア、９……Ｐ型不純物層。
FIG. 1 is a cross-sectional view showing a compound field effect transistor having a 2DEG structure according to an embodiment of the present invention, FIG. 2 is a graph showing the energy band near the gate edge, and FIG. A schematic cross-sectional view showing the vicinity of the source and gate edge of a compound field effect transistor having the same structure, FIG. 3b is a graph showing the energy band near the source, and FIG. 3c is a graph showing the energy band near the gate edge. , Figure 4 shows the channel potential and 2
A graph showing the relationship between the DEG concentration and FIG. 5 is a graph showing the relationship between the channel potential and the tunnel current. 1, 16... Source, 2, 14... Gate, 3
...Drain, 4,15...Cap layer, 5,1
3... Donor supply layer, 6, 12... Spacer layer,
7, 11... Channel layer, 8... GaAs buffer, 9... P-type impurity layer.
Claims (1)
に形成される２ＤＥＧ層を利用した２ＤＥＧ構造
を有する化合物電界効果トランジスタにおいて、
前記チヤネル層の下方のゲート直下域にのみＰ型
不純物が導入されたＰ型不純物層を有することを
特徴とする２ＤＥＧ構造を有する化合物電界効果
トランジスタ。 In a compound field effect transistor having a 2DEG structure using a 2DEG layer formed at the heterojunction interface of channel layers to be heterojunctioned,
A compound field effect transistor having a 2DEG structure, characterized in that it has a P-type impurity layer into which a P-type impurity is introduced only in a region immediately below a gate below the channel layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12285289U JPH0361333U (en) | 1989-10-20 | 1989-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12285289U JPH0361333U (en) | 1989-10-20 | 1989-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0361333U true JPH0361333U (en) | 1991-06-17 |
Family
ID=31670850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12285289U Pending JPH0361333U (en) | 1989-10-20 | 1989-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0361333U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012042589A1 (en) * | 2010-09-27 | 2012-04-05 | 株式会社ワコール | Garment with cup sections |
-
1989
- 1989-10-20 JP JP12285289U patent/JPH0361333U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012042589A1 (en) * | 2010-09-27 | 2012-04-05 | 株式会社ワコール | Garment with cup sections |
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