JPH0355736A - Linear hot cathode - Google Patents
Linear hot cathodeInfo
- Publication number
- JPH0355736A JPH0355736A JP1191973A JP19197389A JPH0355736A JP H0355736 A JPH0355736 A JP H0355736A JP 1191973 A JP1191973 A JP 1191973A JP 19197389 A JP19197389 A JP 19197389A JP H0355736 A JPH0355736 A JP H0355736A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thin film
- tungsten
- wire
- barium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 15
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 12
- 239000011777 magnesium Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 239000010937 tungsten Substances 0.000 claims abstract description 9
- 229910052788 barium Inorganic materials 0.000 claims abstract description 8
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims abstract description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 8
- 239000011575 calcium Substances 0.000 abstract description 7
- 229910052791 calcium Inorganic materials 0.000 abstract description 6
- 229910052712 strontium Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001603 reducing effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、真空管、CRT、蛍光表示管等に使用する
線状熱陰極に関するものである.〔従来の技術〕
線状熱陰極を利用する機器は従来種々提案されており、
例えば平板型表示装置として特開昭60一84744号
に開示されている如きものがある.第2図はかかる従来
の平板型表示装置を示す模式的断面図であり、この表示
装置には、絶縁性基板1上に一定の間隔で設けた複数の
金属製係止部2上にかけ渡して、所定の間隔で電子放射
物質を保持させ陰極4を形威した陰極ワイヤー3が設け
られている.各陰極4と対応させ、上記絶縁性基仮l上
に制御電極5を配設すると共に、陰極ワイヤー3の上方
には各陰極4と対応した位置に貫通孔6aを備えたグリ
ッド電極6、及びこのグリノド電極6の上方に上記各陰
極4に対応した位置に蛍光体7を塗布したアノード8が
夫々上,下方向に所要の間隔を隔てて配設されている。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a linear hot cathode used in vacuum tubes, CRTs, fluorescent display tubes, etc. [Prior art] Various devices using linear hot cathodes have been proposed in the past.
For example, there is a flat panel display device as disclosed in Japanese Patent Application Laid-Open No. 60-184744. FIG. 2 is a schematic cross-sectional view showing such a conventional flat panel display device. , cathode wires 3 holding electron-emitting substances and forming cathodes 4 are provided at predetermined intervals. A control electrode 5 is disposed on the insulating substrate 1 in correspondence with each cathode 4, and a grid electrode 6 provided with a through hole 6a at a position corresponding to each cathode 4 above the cathode wire 3; Above this grid electrode 6, anodes 8 coated with phosphor 7 are arranged at positions corresponding to the respective cathodes 4 at required intervals in the upward and downward directions, respectively.
前記陰極ワイヤー3はタングステン製であり、また陰極
4は、陰極ワイヤー3の表面に電着法、或いは塗布法な
どによりバリウム、ストロンチウム、カルシウムの三元
炭酸塩( (Ba.Sr,Ca) Cow)を付着させ
、表示装置容器内を真空に排気する過程でこれを加熱分
解し、上記炭酸塩を酸化物( (Ba,Sr,Ca)
0 )に変換してある.なお、この際、上記陰極ワイヤ
ー3のタングステンが、以下のような反応で電子放射物
質中のBaOを還元して過剰8aを住成する。この8a
は拡散時に陰極表面へ移動し、BaO中でドナーを形成
し工砧7ションに寄与する。The cathode wire 3 is made of tungsten, and the cathode 4 is made of ternary carbonate of barium, strontium, and calcium ((Ba.Sr,Ca)Cow) by electrodeposition or coating on the surface of the cathode wire 3. is deposited and thermally decomposed in the process of evacuating the inside of the display device container, converting the carbonate into oxides ((Ba, Sr, Ca)
0). At this time, the tungsten of the cathode wire 3 reduces BaO in the electron emitting material through the following reaction to form excess 8a. This 8a
moves to the cathode surface during diffusion, forms donors in BaO, and contributes to the process.
6 BaO + W −+ BaJO,, + 3 8
a次に動作について説明する。陰極ワイヤー3をその両
端に給電して約700’Cに加熱すると陰極4表面から
電子が放射される。このときグリソド電極6及びアノー
ド8に正の電極を印加すれば電子ビームは貫通孔6aを
通して蛍光体7に導かれ、蛍光体7を励起せしめる。一
方制in TFi極5に負の電圧を印加すると陰極4周
辺の電界が陰極4bに対して負となり、陰極4からの電
子放射を停止せしめ得るから、例えば制御電極5に正の
パルス電圧を印加することにより電子ビームの放射を制
御できることになる。6 BaO + W −+ BaJO,, + 3 8
a Next, the operation will be explained. When the cathode wire 3 is heated to about 700'C by supplying power to both ends thereof, electrons are emitted from the surface of the cathode 4. At this time, if a positive electrode is applied to the glissode electrode 6 and the anode 8, the electron beam is guided to the phosphor 7 through the through hole 6a and excites the phosphor 7. On the other hand, if a negative voltage is applied to the TFi electrode 5, the electric field around the cathode 4 becomes negative with respect to the cathode 4b, and electron emission from the cathode 4 can be stopped. Therefore, for example, a positive pulse voltage is applied to the control electrode 5. By doing so, the emission of the electron beam can be controlled.
ところでかかる線状熱陰極は、上記炭酸塩を酸化物に替
える過程、或いは表示装置の初期動作時に蛍光体7.係
止部2等から放出される不純ガスの影響により、初朋工
珈ソション電流が低くなり、表示装置の輝度が低くなっ
たり、表示装置の製造排気工程に長時間を要するなどの
問題点があった.先に発明者等は上記のような問題を解
決するものとして、0.2〜20重量%の希土類金属酸
化物と、酸化バリウムを含んだアルカリ土類金属酸化物
とを含む混合物であって、希土類金属酸化物に対する酸
化バリウムの重量比を0.4〜60とした電子放射物質
を線状の耐熱性金属表面に保持した線状熱陰極を提案し
多大の或果を収めた(特願昭62 − 122053号
)。By the way, such a linear hot cathode is used in the process of replacing the carbonate with an oxide or during the initial operation of a display device. Due to the influence of impure gas emitted from the locking part 2, etc., the initial voltage current decreases, causing problems such as lowering the brightness of the display device and requiring a long time for the display device manufacturing exhaust process. there were. Previously, the inventors proposed a mixture containing 0.2 to 20% by weight of a rare earth metal oxide and an alkaline earth metal oxide containing barium oxide as a solution to the above problems. He proposed a linear hot cathode in which an electron-emitting material with a weight ratio of barium oxide to rare earth metal oxide of 0.4 to 60 was held on the surface of a linear heat-resistant metal, and achieved great results (Tokugan Sho No. 62-122053).
そして継続してかかる線状熱陰極に関して研究開発を行
っていたところ、上記反応式により生成するBasWO
*は、経時的に耐熱金属及び電子放射物質の界面に蓄積
されて両者を隔てることにもなり、その結果過剰Baの
生威を妨げる恐れがあり、又一方、上記Ba3WO.の
生威抑制は他方で上記反応式におけるTi離Baの発生
をも減少させてしまうことになり、いづれにしても寿命
特性を低下させる一つの原因になることが確認された.
ここに発明者等はかかる問題に鑑み鋭意検討を重ねた結
果この発明に到達したのである。As we continued to research and develop such linear hot cathodes, we discovered that BasWO, which is produced by the above reaction formula,
* may accumulate over time at the interface between the heat-resistant metal and the electron-emitting material, separating the two, and as a result may impede the survival of excess Ba. On the other hand, it was confirmed that the suppression of the growth rate also reduces the generation of Ti-Ba in the above reaction formula, which is one of the causes of deterioration of the life characteristics. In view of this problem, the inventors have made extensive studies and have arrived at this invention.
〔課題を解決するための手段)
この発明の線状熱陰極は、線状のタングステン金属上に
還元剤としてシリコン,マグネシウムを含むニフケル薄
膜を被着形戒し、その上に少なくともバリウムを含むア
ルカリ土類金属酸化物に酸化スカンジウムを混合した電
子放射物質を被着したことを特徴とするものである。[Means for Solving the Problems] The linear hot cathode of the present invention has a Nifkel thin film containing silicon and magnesium as a reducing agent deposited on a linear tungsten metal, and an alkali film containing at least barium on the Nifkel thin film containing silicon and magnesium as a reducing agent. It is characterized by being coated with an electron-emitting material that is a mixture of earth metal oxide and scandium oxide.
〔作 用]
この発明においては、基体のタングステン金属層上にニ
ノケル薄膜が被着形威され、電子放射物質層との直接接
触を回避しているので両者間の界面における上記Bal
WOiなどの中間層生戒が抑制される.そして上述のB
a=WO,の生戒反応時のBa生戊!its少はニッケ
ル薄膜中の還元性シリコン又はマグネシウムの還元作用
で補うものであり、結局前述した寿命特性の低下を回避
するものと推定される。[Function] In this invention, the Ninokel thin film is deposited on the tungsten metal layer of the base to avoid direct contact with the electron emitting material layer, so that the above Bal at the interface between the two is avoided.
Middle class lifestyles such as WOi will be suppressed. And the above B
A = WO, Ba life reaction at the time of life reaction! It is presumed that the reduction in the amount of ITS is compensated for by the reducing action of reducing silicon or magnesium in the nickel thin film, and that the above-mentioned deterioration in life characteristics is eventually avoided.
以下実施例によりこの発明を具体的に説明する。 The present invention will be specifically explained below with reference to Examples.
第1図はこの発明の一実施例による線状熱陰極を用いた
表示装置の要部を示す模式的断面図であり、図中1はガ
ラス板,セラミソク板等で構威した絶縁性基板、2は主
として金属製の突起又はリブ等として形成される係止部
、3はシリコン.マグネシウムを含むニッケル′iR)
1!9が被着されたタングステン陰極ワイヤー 4は陰
極ワイヤー3にその長手方向に所要の間隔で形威された
陰極、5は制御電極、6はグリソド電極、8はアノード
を夫々示している.
上記絶縁性基板1上に一定間隔で復敗の係止部2を設け
、この各係止部2に渡す態様で陰極ワイヤー3が、これ
に形威した陰極4が相隣する係止部2.2間に位置する
よう張架されている。絶縁性基板1上には前記各陰極4
と対向する位置に制御電極5を配設し、また、陰極ワイ
ヤー3の上方には前記陰極4と対向する位置に貫通孔6
aを開口したグリッド電極6が、更にその上には前記陰
極4と対向する位置に蛍光体7を付したアノード8が夫
々上下方向に間隔をおいて配設されていろ。FIG. 1 is a schematic cross-sectional view showing the main parts of a display device using a linear hot cathode according to an embodiment of the present invention, in which 1 is an insulating substrate made of a glass plate, a ceramic plate, etc. 2 is a locking portion mainly formed as a metal protrusion or rib, and 3 is a silicone locking portion. Nickel (containing magnesium)
1!9 is coated with a tungsten cathode wire. 4 is a cathode formed on the cathode wire 3 at required intervals in its longitudinal direction, 5 is a control electrode, 6 is a glisode electrode, and 8 is an anode. Reversible locking portions 2 are provided at regular intervals on the insulating substrate 1, and the cathode wire 3 is passed to each of the locking portions 2, and the cathode 4 formed thereon is adjacent to the locking portions 2. .It is stretched so that it is located between the two. Each cathode 4 is disposed on the insulating substrate 1.
A control electrode 5 is provided at a position facing the cathode 4, and a through hole 6 is provided above the cathode wire 3 at a position facing the cathode 4.
A grid electrode 6 with an opening a is disposed above the grid electrode 6, and an anode 8 having a phosphor 7 attached thereto at a position facing the cathode 4 is disposed at intervals in the vertical direction.
以上のような構或は、実質的には陰極ワイヤー3に上記
ニソケル薄膜9が被着されていることを除き第2図の従
来品と略同一である。The structure described above is substantially the same as the conventional product shown in FIG. 2, except that the cathode wire 3 is coated with the Nisokel thin film 9.
陰極ワイヤーとしてはタングステンが用いられるが、こ
のタングステンワイヤーには、ニンケル薄膜が被着され
る.該ニッケル薄膜としては、般的な蒸着法により蒸着
される。ニンケル中には、還元作用を示すシリコン,又
はマグネシウムあるいは両者を重量比0.05〜5%含
有させる。Tungsten is used as the cathode wire, and a Ninkel thin film is coated on this tungsten wire. The nickel thin film is deposited by a general vapor deposition method. Ninkel contains 0.05 to 5% by weight of silicon or magnesium, or both, which have a reducing effect.
上記シリコン又はマグネシウムのニソケル中の含有量は
、厳格な限定ではないが、その下限以下ではその作用が
乏しくなり又上限を超えるとニッムケル被膜形戒が困難
になりいづれも好ましくない.
次に陰極としては、少なくとも酸化バリウムを含むバリ
ウム、ストロンチウム、カルシウムなどアルカリ土類金
属化合物からなり、酸化スカンジウムを含有させた電子
放射物質による電着液を用いる.具体的には、Bad:
6 4, SrO: 3 2, CaO:4各重量%
のものに、酸化スカンジウムを全量に対して0.2〜2
0重量%含有させた.これを従来と同様の電着法により
膜厚8μで陰極ワイヤー3上に保持させ各陰極を形成し
た。The content of silicon or magnesium in Nisokel is not strictly limited, but if it is below the lower limit, its effect will be poor, and if it exceeds the upper limit, it will be difficult to form a Nisokel film, both of which are undesirable. Next, as the cathode, an electrodeposition liquid made of an alkaline earth metal compound such as barium, strontium, or calcium containing at least barium oxide, and an electron emitting substance containing scandium oxide is used. Specifically, Bad:
6 4, SrO: 3 2, CaO: 4 each weight%
0.2 to 2 scandium oxide based on the total amount of
It contained 0% by weight. Each cathode was formed by holding this on the cathode wire 3 to a film thickness of 8 μm using a conventional electrodeposition method.
次にこれを表示装置の排気過程において加熱し、炭酸塩
(Ba,Sr,Ca) COs Scz(COs)*
を(8aSr, Ca) O−SCzOtに変え組或比
の異る陰極を有する表示装置を作成した。Next, this is heated in the exhaust process of the display device, and carbonate (Ba, Sr, Ca) COs Scz (COs)*
(8aSr, Ca) O-SCzOt to produce display devices having cathodes with different composition ratios.
上記のシリコン又はマグネシウムを含むニッケル薄膜が
、タングステンワイヤーと陰極の電子放射物質層間に介
在していることにより、例えば次式
BaO + St−4Ba + SiOBaO + M
g−4Ha + MgOの如く電子放射物質中のBaO
が還元されてBaが遊離しBaを充分に供給し得るので
ある。By interposing the nickel thin film containing silicon or magnesium between the tungsten wire and the electron emitting material layer of the cathode, for example, the following formula BaO + St-4Ba + SiOBaO + M
g-4Ha + BaO in electron emitting materials such as MgO
is reduced and Ba is liberated, making it possible to supply a sufficient amount of Ba.
そしてタングステンワイヤーと電子放射物質との直接接
触がないので上述の中間層11aJO.の生成による問
題が除去されるのである.
実際に、上述の構戒の表示装置において、タングステン
ワイーヤーに対し0.1重量%のシリコン(又はマグネ
シウム)を含むニッケル金属層を蒸着法により10μ厚
M着した。そしてこの上に、上記組戒のBa+Sr,C
a炭酸塩からなる電子放射物質に対し5重量%酸化スカ
ンジウムを配合させたものを電@塗布したもの(実施例
品》、及び上記ニッケル金属層を省いたもの(比較例品
)について、それら表示装置の高輝度特性維持時間を測
定した.その結果、本発明実施例品は約10000時間
であったのに対し、比較例品は7000時間であった。Since there is no direct contact between the tungsten wire and the electron emitting material, the above-mentioned intermediate layer 11aJO. This eliminates the problem caused by the generation of . Actually, in the above-mentioned display device, a nickel metal layer containing 0.1% by weight of silicon (or magnesium) was deposited on the tungsten wire to a thickness of 10 μm by vapor deposition. And on top of this, Ba + Sr, C of the above group precepts
a) The display of the electron emitting material made of carbonate mixed with 5 wt% scandium oxide (example product) and the product without the nickel metal layer (comparative example product) The high brightness characteristic maintenance time of the device was measured.As a result, the time for maintaining the high brightness characteristic of the device was approximately 10,000 hours for the example product of the present invention, while it was 7,000 hours for the comparative example product.
即ちこの発明による寿命特性の向上は従来品に対し約4
割にも達した.
〔発明の効果〕
以上説明したようにこの発明の陰極は、表示装置の高輝
度化及び電子管装置などの高性能化を長期に維持する等
長寿命化に優れた効果を奏するものである.In other words, the life characteristics of this invention are improved by about 4 times compared to conventional products.
It reached a certain percentage. [Effects of the Invention] As explained above, the cathode of the present invention has excellent effects in increasing the brightness of display devices and maintaining the high performance of electron tube devices and the like over a long period of time, thereby extending the life of the cathode.
第l図は本発明品を用いた表示装置の模式的断面図、第
2図は従来の表示装置を示す模式的断面図である.
1・・・絶縁性基仮、2・・・係止部、3・・・陰極タ
ングステンワイヤー 4・・・陰極、5・・・制御ii
8i、6・・・グリッド電極・7・・・蛍光体、8・・
・アノード、9・・・シリコン.マグネシウム含有ニッ
ケルfjlllW。
なお、図中、同一符号は同一、又は相当部分を示す.FIG. 1 is a schematic sectional view of a display device using the product of the present invention, and FIG. 2 is a schematic sectional view showing a conventional display device. DESCRIPTION OF SYMBOLS 1... Insulating base temporary, 2... Locking part, 3... Cathode tungsten wire 4... Cathode, 5... Control ii
8i, 6... Grid electrode, 7... Fluorescent substance, 8...
・Anode, 9...Silicon. Magnesium-containing nickel fjlllW. In addition, the same symbols in the figures indicate the same or equivalent parts.
Claims (1)
マグネシウムを含むニッケル薄膜を被着形成し、その上
に少なくともバリウムを含むアルカリ土類金属酸化物に
酸化スカンジウムを混合した電子放射物質を被着したこ
とを特徴とする線状熱陰極。Silicon as a reducing agent on the linear tungsten metal,
A linear hot cathode characterized in that a nickel thin film containing magnesium is deposited, and an electron emitting material made of an alkaline earth metal oxide containing at least barium mixed with scandium oxide is deposited thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1191973A JPH0355736A (en) | 1989-07-24 | 1989-07-24 | Linear hot cathode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1191973A JPH0355736A (en) | 1989-07-24 | 1989-07-24 | Linear hot cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0355736A true JPH0355736A (en) | 1991-03-11 |
Family
ID=16283520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1191973A Pending JPH0355736A (en) | 1989-07-24 | 1989-07-24 | Linear hot cathode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0355736A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0560324A1 (en) | 1992-03-11 | 1993-09-15 | Mitsubishi Gas Chemical Company, Inc. | Cleaning fluid for semiconductor substrate |
-
1989
- 1989-07-24 JP JP1191973A patent/JPH0355736A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0560324A1 (en) | 1992-03-11 | 1993-09-15 | Mitsubishi Gas Chemical Company, Inc. | Cleaning fluid for semiconductor substrate |
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