JPH0340955B2 - - Google Patents
Info
- Publication number
- JPH0340955B2 JPH0340955B2 JP57163889A JP16388982A JPH0340955B2 JP H0340955 B2 JPH0340955 B2 JP H0340955B2 JP 57163889 A JP57163889 A JP 57163889A JP 16388982 A JP16388982 A JP 16388982A JP H0340955 B2 JPH0340955 B2 JP H0340955B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- semiconductor
- well region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 45
- 239000012535 impurity Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 239000007943 implant Substances 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 229910004298 SiO 2 Inorganic materials 0.000 description 33
- 238000000034 method Methods 0.000 description 23
- 239000004020 conductor Substances 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 208000021668 chronic eosinophilic leukemia Diseases 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 108091006146 Channels Proteins 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 108010008885 Cellulose 1,4-beta-Cellobiosidase Proteins 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000005260 alpha ray Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57163889A JPS5954260A (ja) | 1982-09-22 | 1982-09-22 | 半導体記憶装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57163889A JPS5954260A (ja) | 1982-09-22 | 1982-09-22 | 半導体記憶装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954260A JPS5954260A (ja) | 1984-03-29 |
| JPH0340955B2 true JPH0340955B2 (de) | 1991-06-20 |
Family
ID=15782722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57163889A Granted JPS5954260A (ja) | 1982-09-22 | 1982-09-22 | 半導体記憶装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954260A (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197961A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPS61100958A (ja) * | 1984-10-22 | 1986-05-19 | Nec Corp | 半導体メモリ集積回路装置 |
| JPH0666444B2 (ja) * | 1984-12-28 | 1994-08-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5148255A (en) * | 1985-09-25 | 1992-09-15 | Hitachi, Ltd. | Semiconductor memory device |
| JP2702909B2 (ja) * | 1986-04-23 | 1998-01-26 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPH0821681B2 (ja) * | 1986-06-18 | 1996-03-04 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| USRE38296E1 (en) * | 1987-04-24 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
| US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
| JP3266644B2 (ja) * | 1991-04-08 | 2002-03-18 | テキサス インスツルメンツ インコーポレイテツド | ゲートアレイ装置 |
| US5264385A (en) * | 1991-12-09 | 1993-11-23 | Texas Instruments Incorporated | SRAM design with no moat-to-moat spacing |
-
1982
- 1982-09-22 JP JP57163889A patent/JPS5954260A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5954260A (ja) | 1984-03-29 |
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