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JPH0335216A - Continuous type sputtering device and production of substrate for color liquid crystal - Google Patents

Continuous type sputtering device and production of substrate for color liquid crystal

Info

Publication number
JPH0335216A
JPH0335216A JP17017489A JP17017489A JPH0335216A JP H0335216 A JPH0335216 A JP H0335216A JP 17017489 A JP17017489 A JP 17017489A JP 17017489 A JP17017489 A JP 17017489A JP H0335216 A JPH0335216 A JP H0335216A
Authority
JP
Japan
Prior art keywords
substrate
substrates
liquid crystal
reduced pressure
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17017489A
Other languages
Japanese (ja)
Inventor
Hiroshi Ezaki
江崎 弘
Satoru Shinsenji
秦泉寺 哲
Hideki Matsukawa
松川 秀樹
Toyoji Chino
知野 豊治
Kazuyuki Nonaka
野中 和志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17017489A priority Critical patent/JPH0335216A/en
Publication of JPH0335216A publication Critical patent/JPH0335216A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To continuously and stably produce the substrate for color liquid crystals having excellent characteristics by providing >=2 chambers for integrally heating and drying plural substrates under a reduced pressure and providing a chamber having a preheating section for preheating the substrates and a regular heating section for sputtering while heating. CONSTITUTION:Two chambers in which the plural substrates are housed and which integrally heat and dry the substrates under the reduced pressure and provided. These chambers 9, 10 are connected to the chamber provided with the preheating section 6 and the regular heating section 7. The glass substrates 1 are housed in the chambers 9, 10 and are heated and dried under the reduced pressure at 180 deg.C for 20 minutes. The glass substrates 1 are thereafter continuously transported in an arrow direction. The heating is controlled in the preheating section 6 and the regular heating section 7 in such a manner that the surface temp. on the sputtering surface side of the glass substrates 1 attain 180 deg.C, then tranparent electrodes are formed. The transparent electrodes are formed after the degassing from the color filters and transparent org. this films is sufficiently executed in this way and, therefore, the transparent electrodes having a small specific resistance and high transmittance are formed and the substrate for color liquid crystals having the excellent characteristics is produced.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は連続式スパッタ装置および連続式スパッタ装置
により透明電極を形成する場合のカラー液晶用基板の製
造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a continuous sputtering apparatus and a method for manufacturing a color liquid crystal substrate in which transparent electrodes are formed using the continuous sputtering apparatus.

従来の技術 カラー液晶表示装置は既に実用化されており、薄型軽量
、低電圧駆動、低消費電力などの特徴があり、これらの
表示装置は、カラーフィルターの位置する構造から二つ
に大別される。
Conventional technology Color liquid crystal display devices have already been put into practical use, and have characteristics such as being thin and lightweight, low voltage drive, and low power consumption.These display devices can be roughly divided into two types based on the structure in which the color filter is located. Ru.

ひとつは、液晶パネルの外側にカラーフィルターを設け
たもの、もうひとつは液晶パネルの内側に設けたもの(
内在型と呼ぶ〉である。更に内在型であっても、液晶パ
ネルを構成するカラーフィルター側基板の構造により、
以下の2種類がある。カラス基板上にカラーフィルター
を形成した後、例えば酸化インジウムと酸化錫からなる
透明電極(以下、インジウム・チン・オキサイド略して
ITOと記す)をパターンニングするタイプ(以下IT
OonCFタイプと記す)と、ガラス基板上に透明電極
をパターンニングした後、カラーフィルターを形成する
タイプ(以下CFonlTOと=己す)がある。
One type has a color filter installed on the outside of the LCD panel, and the other has a color filter installed inside the LCD panel (
This is called an intrinsic type. Furthermore, even if it is an internal type, due to the structure of the color filter side substrate that makes up the liquid crystal panel,
There are two types: After forming a color filter on a glass substrate, a transparent electrode made of, for example, indium oxide and tin oxide (hereinafter referred to as ITO) is patterned (hereinafter referred to as IT).
There is a type (hereinafter referred to as CFonlTO) in which a color filter is formed after patterning a transparent electrode on a glass substrate (hereinafter referred to as CFonlTO).

しかしながら、前述のような液晶の特徴をより有効に活
用するためには、前述のITOonCFタイプが有効で
あり、例えば、特開昭63−44628号公報などが知
られている。
However, in order to more effectively utilize the characteristics of the liquid crystal as described above, the above-mentioned ITO on CF type is effective, and for example, Japanese Patent Laid-Open No. 63-44628 is known.

発明が解決し゛ようとする課題 第3図a、b、cは従来の1TOoncFタイプのカラ
ー液晶用基板の製造方法によるカラー液晶用基板の説明
図である。第3図aはガラス基板1上に例えば、赤(R
)・緑(G)・青(B)・黒(BL)からなるカラーフ
ィルター2が形成されたものを示している。次に、前記
基板上へは、カラーフィルターの凹凸を平滑にするため
の平滑層的役割と、後工程となる透明電極の形成工程、
透明電極のエツチング工程、更にはレジストの剥離工程
などにおいて保護層的役割を持たせるため、第3図すの
ようにガラス基板上全面に有機透明薄膜4を形成し、更
に透明電極3が形成される。
Problems to be Solved by the Invention Figures 3a, b, and c are explanatory diagrams of a color liquid crystal substrate produced by a conventional 1TOoncF type color liquid crystal substrate manufacturing method. FIG. 3a shows, for example, red (R) on the glass substrate 1.
), green (G), blue (B), and black (BL). Next, on the substrate, a smoothing layer is formed to smooth out the unevenness of the color filter, and a step of forming a transparent electrode, which is a subsequent step, is applied.
In order to play the role of a protective layer in the transparent electrode etching process and furthermore in the resist peeling process, an organic transparent thin film 4 is formed on the entire surface of the glass substrate as shown in Figure 3, and a transparent electrode 3 is further formed. Ru.

次に、第3図Cのようにカラーフィルター2に対し特定
位置となるよう複数の透明電極3にパターンニングされ
る。この透明電極3の形成方法について更に第4図を用
いて詳述する。
Next, as shown in FIG. 3C, a plurality of transparent electrodes 3 are patterned at specific positions relative to the color filter 2. The method for forming the transparent electrode 3 will be further described in detail with reference to FIG.

第4図は従来の連続式スパッタ装置の構成を示す図であ
る。図において基板1は矢印方向へ連続的に搬送され、
予備加熱部6で予備加熱され、本加熱部7で加熱されな
がら透明電極(ITO)が形成される。8はITOをス
パッタリングするためのカソードである。
FIG. 4 is a diagram showing the configuration of a conventional continuous sputtering apparatus. In the figure, the substrate 1 is continuously transported in the direction of the arrow,
A transparent electrode (ITO) is formed while being preheated in a preheating section 6 and heated in a main heating section 7. 8 is a cathode for sputtering ITO.

このような連続式スパッタ装置の特長の一つは生産性に
あり、生産性を高めるためには基板をできるだけ早く、
しかも連続的に送ることが望ましく、よってITOター
ゲットをスパッタリングするカソードを第4図のように
複数設置し搬送スピードを早くすることができるよう設
計されている。
One of the features of such continuous sputtering equipment is productivity, and to increase productivity, substrates can be sputtered as quickly as possible.
Furthermore, it is desirable to convey the ITO target continuously, and therefore, the design is such that a plurality of cathodes for sputtering the ITO target are installed as shown in FIG. 4 to increase the conveyance speed.

しかし、前述のような従来の装置および方法によりカラ
ー液晶用基板を製造すると、前記カラーフィルター2お
よび有機透明溝11j4が形成された基板上に成膜した
場合と、ガラス基板単体上に直接成膜した場合とでは透
明電極の特性すなわち比抵抗や透過率に差が生じ、ガラ
ス上に比べ有機透明薄膜4上で前記特性が悪くなるとい
う問題点を有していた。
However, when a color liquid crystal substrate is manufactured using the conventional apparatus and method as described above, a film is formed on a substrate on which the color filter 2 and organic transparent grooves 11j4 are formed, and a film is formed directly on a single glass substrate. In this case, there is a difference in the characteristics of the transparent electrode, that is, the specific resistance and the transmittance, and there is a problem that the characteristics are worse on the organic transparent thin film 4 than on the glass.

これは通常のカラーフィルター2が有機樹脂に有機顔料
などを分散した材料で作成されており。
In this case, the normal color filter 2 is made of a material in which organic pigments are dispersed in organic resin.

更に基板の成膜搬送スピードが早いため予備加熱される
時間が短く、スパッタリング最中の本加熱時においてカ
ラーフィルター2や有機透明薄114からの脱ガスによ
り成膜された透明電極3の特性の悪化、すなわち比抵抗
が増加し、透過率が低下する。
Furthermore, since the film-forming transport speed of the substrate is fast, the time for preheating is short, and the properties of the transparent electrode 3 formed as a film are deteriorated due to degassing from the color filter 2 and organic transparent thin film 114 during main heating during sputtering. , that is, the specific resistance increases and the transmittance decreases.

本発明は上記問題点を解決するもので、特性の優れたカ
ラー液晶用基板を連続的に安定して製造できる連続式ス
パッタ装置およびカラー液晶用基板の製造方法を提供す
ることを目的とするものである。
The present invention solves the above-mentioned problems, and aims to provide a continuous sputtering apparatus that can continuously and stably manufacture color liquid crystal substrates with excellent characteristics, and a method for manufacturing color liquid crystal substrates. It is.

課題を解決するための手段 本発明は、上記目的を達成するために、複数の基板を一
括して減圧下で加熱乾燥する槽を二つ以上備え、これら
の槽から順次搬送供給される基板を予備加熱する予備加
熱部と、加熱しながらスパッタリングする本加熱部とを
有する槽を具備したものである。
Means for Solving the Problems In order to achieve the above object, the present invention includes two or more tanks for heating and drying a plurality of substrates at once under reduced pressure, and the substrates are sequentially transported and supplied from these tanks. It is equipped with a tank having a preheating section for preheating and a main heating section for sputtering while heating.

また前記手段を用いて、カラーフィルターおよび有機透
明薄膜が形成されたガラス基板を減圧下で加熱乾燥した
のち透明電極を形成するものである。
Further, using the above method, a glass substrate on which a color filter and an organic transparent thin film are formed is heated and dried under reduced pressure, and then a transparent electrode is formed.

作用 本発明によれば、基板は減圧下で加熱乾燥されるため効
果的に脱ガスが行われカラーフィルターや有機透明薄膜
からの脱ガスが十分に行われたのちに透明電極が形成さ
れるので、カラーフィルターや有機透明薄膜が形成され
た基板であっても、比抵抗値が小さく透過率の高いカラ
ー液晶用基板を連続的に製造することができる。
Function According to the present invention, since the substrate is heated and dried under reduced pressure, it is effectively degassed, and the transparent electrode is formed after the color filter and the organic transparent thin film are sufficiently degassed. Even if a color filter or an organic transparent thin film is formed on the substrate, color liquid crystal substrates having a low specific resistance value and high transmittance can be continuously manufactured.

実施例 以下、本発明の一実施例について図面を参照しながら説
明する。ここで、本発明と従来例の同一箇所については
同一番号を付す。
EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. Here, the same numbers are given to the same parts in the present invention and the conventional example.

(実施例1) 第1図aは本発明のカラー液晶用基板の製造方法におけ
る連続式スパッタ装置の槽底を説明する平面図、同図す
は同断面図である。
(Example 1) FIG. 1a is a plan view and a cross-sectional view of the tank bottom of a continuous sputtering apparatus in the method of manufacturing a color liquid crystal substrate of the present invention.

まず、第3図のようにガラス基板1上に黒色のカラーフ
ィルターを印刷法により形成し、その後、赤、緑、青適
当な順番で各色を印刷しカラーフィルター2を形成する
。次に、有機透明薄膜4として紫外線硬化型のアクリル
系樹脂をガラス基板上全面に塗布し、光照射して硬化さ
せ有機透明薄膜4を形成する。ここで使用したカラーフ
ィルター2と有機透明薄膜4の耐熱温度は230℃以上
のものである。
First, as shown in FIG. 3, a black color filter is formed on a glass substrate 1 by a printing method, and then red, green, and blue are printed in an appropriate order to form a color filter 2. Next, an ultraviolet curable acrylic resin is applied to the entire surface of the glass substrate as the organic transparent thin film 4, and is cured by irradiation with light to form the organic transparent thin film 4. The heat resistant temperature of the color filter 2 and organic transparent thin film 4 used here is 230° C. or higher.

次に、第1図の連続式スパッタ装置により透明電極3を
形成する。図において、槽9,10は複数の基板を収納
し一括して減圧加熱乾燥するもので、本実施例では2つ
設ける。この槽9.10は、バルブ11.12を介して
予備加熱部6と本加熱部7とカソード8が設けられた槽
(以下スパッタリング槽と記す〉と連結される。収納槽
13゜14は透明電極が形成された基板を受は取り収納
するもので二つ設けられている。
Next, a transparent electrode 3 is formed using the continuous sputtering apparatus shown in FIG. In the figure, tanks 9 and 10 house a plurality of substrates and collectively dry them by heating under reduced pressure, and in this embodiment, two are provided. This tank 9.10 is connected to a tank (hereinafter referred to as sputtering tank) provided with a preheating section 6, a main heating section 7, and a cathode 8 via a valve 11.12.The storage tanks 13 and 14 are transparent. There are two receivers for receiving and storing the substrates on which the electrodes are formed.

前記ガラス基板1は槽9,10に複数枚収納され、バル
ブ11.12が閉じた状態でガラス基板1の温度が18
0℃となるよう加熱制御し20分間減圧下で加熱乾燥す
る。その後、バルブ11を開き、ガラス基板1は矢印方
向に連続的に搬送され予晰加熱部6および本加熱部7で
ガラス基板1のスパッタ面側の表面温度が180℃にな
るよう加熱制御され、ITOターゲットがカソード8で
スパッタリングされガラス基板1上に透明電極3が形成
される。この基板は順次収納槽13に収納される。槽9
のガラス基板1がなくなると、バルブ11は閉じ、次に
バルブ12が開き槽10のガラス基板1が順次搬送され
同様に透明電極3が形成される。この間、空となった槽
9には新しいガラス基板1がセツティングされ減圧下で
加熱乾燥される。上記サイクルによりガラス基板1は常
に矢印方向に搬送され透明電極3が連続的に形成される
。カソード8は2個設け、ITOターゲットとしては酸
化インジウムと酸化錫の割合が90対10重量パーセン
トのものを使用する。所望する膜厚は厚すぎるとITO
のクラックとなり、薄すぎるとシート抵抗値が大きくな
るので約2500Aを成膜目標とする。
A plurality of the glass substrates 1 are stored in tanks 9 and 10, and the temperature of the glass substrates 1 is 18% when the valves 11 and 12 are closed.
The temperature is controlled to be 0° C., and the mixture is heated and dried under reduced pressure for 20 minutes. Thereafter, the valve 11 is opened, and the glass substrate 1 is continuously transported in the direction of the arrow, and is heated in the prelucid heating section 6 and the main heating section 7 so that the surface temperature of the sputtering side of the glass substrate 1 becomes 180°C. An ITO target is sputtered with a cathode 8 to form a transparent electrode 3 on a glass substrate 1. The substrates are sequentially stored in the storage tank 13. Tank 9
When all the glass substrates 1 are used up, the bulb 11 is closed, and then the bulb 12 is opened and the glass substrates 1 in the tank 10 are sequentially transported and transparent electrodes 3 are formed in the same way. During this time, a new glass substrate 1 is set in the empty tank 9 and heated and dried under reduced pressure. Through the above cycle, the glass substrate 1 is always transported in the direction of the arrow, and the transparent electrodes 3 are continuously formed. Two cathodes 8 are provided, and an ITO target with a ratio of indium oxide to tin oxide of 90:10 weight percent is used. If the desired film thickness is too thick, ITO
If the thickness is too thin, the sheet resistance value will increase, so the film formation target is about 2500A.

その結果、カラーフィルター2および有機透明薄膜4が
形成された基板(以下CF基板と記す)とガラス基板単
体に成膜された透明電極のシート抵抗値と透過率を第3
図B点について測定し、その平均値を表1に示す。なお
、本実施例ではCF基板とガラス基板単体をそれぞれ交
互に複数枚成膜しその特性を比較した。
As a result, the sheet resistance and transmittance of the substrate on which the color filter 2 and the organic transparent thin film 4 were formed (hereinafter referred to as CF substrate) and the transparent electrode formed on the single glass substrate were determined by the third method.
Measurements were made at point B in the figure, and the average values are shown in Table 1. In this example, a plurality of CF substrates and a plurality of glass substrates were alternately formed and their characteristics were compared.

表1における透過率は波長550nmにおける値を示す
。表1より明らかなようにその平均値を比べるとCF基
板もシート抵抗値が12Ω/口、透過率が75%以上あ
りガラス基板単体の場合と同じ値で、十分満足できる結
果であった。
The transmittance in Table 1 shows the value at a wavelength of 550 nm. As is clear from Table 1, when comparing the average values, the CF substrate also had a sheet resistance value of 12 Ω/hole and a transmittance of 75% or more, which were the same values as the glass substrate alone, which were sufficiently satisfactory results.

このように得られた基板は通常のフォトリソ工程、IT
Oのエツチング工程を経てカラー液晶用基板を製造する
The substrate thus obtained is subjected to a normal photolithography process, an IT
A color liquid crystal substrate is manufactured through an O etching process.

以上のように本実施例によれば、カラー液晶用基板の製
造における透明電極の成膜工程において、基板を一括し
て減圧下で加熱乾燥する槽を2つ設け、基板を180℃
で20分減圧下で加熱乾燥し、そののちスパッタ面側の
基板の表面温度を180℃に加熱制御することによりカ
ラーフィルター2や有機透明薄膜4からの脱ガスを十分
行った後に透明電極を成膜するので、ガラス基板単体に
成膜したときと同様に比抵抗が小さく透過率の高い透明
電極3が形成でき、特性の優れたカラー液晶用基板を製
造できる。
As described above, according to this embodiment, in the transparent electrode film formation process in the production of color liquid crystal substrates, two tanks are provided for heating and drying the substrates all at once under reduced pressure, and the substrates are heated to 180°C.
After heating and drying under reduced pressure for 20 minutes, the surface temperature of the substrate on the sputtering side is controlled to 180°C to fully degas the color filter 2 and the organic transparent thin film 4, and then a transparent electrode is formed. Since it is formed into a film, a transparent electrode 3 having a low specific resistance and high transmittance can be formed in the same manner as when a film is formed on a single glass substrate, and a color liquid crystal substrate with excellent characteristics can be manufactured.

(以  下  余  白  ) (実施例2) 本発明の第2の実施例では、減圧下で加熱乾燥する温度
を230℃とし、かつ30分乾燥し、基板のスパッタ面
側の表面温度が230℃となるように予備加熱部および
本加熱部を加熱制御する他は、実施例1と同一条件で透
明電極3を成膜する。その結果を併せて表1に示す。表
1のとおり、CF基板とガラス基板単体の特性に差はな
く、実施例1より更に低抵抗の透明電極3が形成できる
(Margin below) (Example 2) In the second example of the present invention, the temperature of heating and drying under reduced pressure was 230°C, the drying was continued for 30 minutes, and the surface temperature of the sputtered side of the substrate was 230°C. The transparent electrode 3 is formed under the same conditions as in Example 1, except that the preheating section and the main heating section are heated so that the following results are obtained. The results are also shown in Table 1. As shown in Table 1, there is no difference in the properties of the CF substrate and the glass substrate alone, and a transparent electrode 3 with even lower resistance than in Example 1 can be formed.

〈実施例3) 第2図は本発明の他の実施例における連続式スパッタ装
置の構成を説明する平面図である。
Embodiment 3 FIG. 2 is a plan view illustrating the configuration of a continuous sputtering apparatus in another embodiment of the present invention.

基板を一括して減圧下で加熱乾燥する槽として9.10
.15の3つの槽を設け、基板を受は取り収納する収納
槽も同様に13.14.17と3槽設ける。このような
装置によれば実施例1より高速の成膜スピードにも対応
でき生産性が更に向上する。
9.10 as a tank for heating and drying substrates all at once under reduced pressure
.. Three tanks 15 are provided, and three storage tanks 13, 14, and 17 are similarly provided to receive and store the substrates. With such an apparatus, it is possible to cope with a film formation speed higher than that in Example 1, and the productivity is further improved.

この装置で、実施例1より成膜レートを大きくかつ搬送
スピードを早くしその他の条件は実施例1と同様に成膜
したが、同様に良い結果を得られた。
Using this apparatus, the film formation rate was higher and the transport speed was faster than in Example 1, and the other conditions were the same as in Example 1, and the same good results were obtained.

(比較例〉 以下、本発明との比較例について説明する。(Comparative example) Comparative examples with the present invention will be described below.

比較例では実施例同様の方法でガラス基板1上にカラー
フィルター2と有機透明薄膜4を形成する。次に、透明
電極3の形成条件としては以下の各条件で成膜しその結
果を実施例と比較するため表1に併せて示す。
In the comparative example, a color filter 2 and an organic transparent thin film 4 are formed on a glass substrate 1 in the same manner as in the example. Next, the transparent electrode 3 was formed under the following conditions, and the results are also shown in Table 1 for comparison with Examples.

比較例1 実施例1と同様の連続式スパッタ装置で、150℃で1
0分間減圧下で加熱乾燥し、その他は同一条件にて成膜
した。
Comparative Example 1 Using the same continuous sputtering apparatus as in Example 1, 1
The film was formed under the same conditions except for heating and drying under reduced pressure for 0 minutes.

比較例2 実施例1と同様の連続式スパッタ装置で、基板のスパッ
タ面側の表面温度が150℃となるように予備加熱部お
よび本加熱部を加熱ホ制御し、その他の条件は同一とし
た。
Comparative Example 2 Using the same continuous sputtering apparatus as in Example 1, the preheating section and main heating section were heated so that the surface temperature of the sputtering side of the substrate was 150°C, and the other conditions were the same. .

比較例3 第4図に示す従来の連続式スパッタ装置で、基板を減圧
下で加熱乾燥せず、その他実施例1と同様の条件で成膜
した。
Comparative Example 3 A film was formed using the conventional continuous sputtering apparatus shown in FIG. 4 under the same conditions as in Example 1 except that the substrate was not heated and dried under reduced pressure.

以上の実施例と比較例から判るように、基板を180℃
以上で20分以上減圧加熱乾燥し、スパッタ面側の基板
の表面温度を少なくとも180℃以上に加熱制御するこ
とによりカラー液晶用基板として特性(シート抵抗値や
透過率)の良い基板を製造できるが〈実施例1,2.3
)、減圧下で加熱乾燥を行わない場合、あるいは180
℃以下、あるいは時間が短い場合であると(比較例1.
3)十分脱ガスされず、また基板の予備加熱温度やスパ
ッタリング時の本加熱温度が低いと(比較例2)、高透
過率・低抵抗基板が得られず好ましくない。
As can be seen from the above examples and comparative examples, the substrate was heated to 180°C.
By heating and drying the above under reduced pressure for 20 minutes or more and controlling the surface temperature of the substrate on the sputtering side to at least 180°C or higher, it is possible to manufacture a substrate with good characteristics (sheet resistance and transmittance) as a color liquid crystal substrate. <Example 1, 2.3
), when heat drying is not performed under reduced pressure, or when 180
℃ or less, or when the time is short (Comparative Example 1.
3) If sufficient degassing is not achieved and the preheating temperature of the substrate and the main heating temperature during sputtering are low (Comparative Example 2), a high transmittance and low resistance substrate cannot be obtained, which is not preferable.

なお、実施例ではスパッタ面側の温度については180
℃と230℃について述べたがカラーフィルターや有機
透明薄膜の耐熱性を考慮し、その耐熱性の範囲であれば
230℃以上で成膜してもよく、透明電極の特性の点で
好ましい。
In addition, in the example, the temperature on the sputtering surface side was 180°C.
.degree. C. and 230.degree. C. have been described, but in consideration of the heat resistance of the color filter and organic transparent thin film, the film may be formed at 230.degree. C. or higher within the heat resistance range, which is preferable from the viewpoint of the characteristics of the transparent electrode.

また、実施例ではカラーフィルター2の形成方法として
印刷法について述べたが例えば染色法。
Further, in the embodiment, a printing method was described as a method for forming the color filter 2, but for example, a dyeing method may be used.

着色法、電着法などによって形成してもよい。It may be formed by a coloring method, an electrodeposition method, or the like.

また、有機透明薄膜4として紫外線硬化型のアクリル系
の樹脂を使用したが、必ずしもこの材料に限定されるも
のでなく他の樹脂、例えばウレタン系、エポキシ系、ポ
リイミド系であってもよい。
Furthermore, although an ultraviolet curing acrylic resin is used as the organic transparent thin film 4, the material is not necessarily limited to this material, and other resins such as urethane, epoxy, and polyimide resins may be used.

また、本発明により製造された基板は、XY単純マトリ
マス液晶パネルや、2端子型のアクティブマ晶パネルに
使用される。特にこれらの液晶パネルは、大容量表示化
・カラー化するため、低抵抗・高透過率のカラー液晶用
基板が必要とされるが、本発明はその要求に十分応えら
れるもので、特性の優れたカラー液晶用基板を製造でき
る連続式スパッタ装置並びにカラー液晶用基板の製造方
法を提供する工業工大なる価値を持つものである。
Further, the substrate manufactured according to the present invention is used for an XY simple matrix liquid crystal panel or a two-terminal type active matrix liquid crystal panel. In particular, these liquid crystal panels require a color liquid crystal substrate with low resistance and high transmittance in order to provide large-capacity display and color. The Institute of Technology has great value in providing a continuous sputtering apparatus capable of manufacturing colored liquid crystal substrates as well as a method for manufacturing color liquid crystal substrates.

発明の効果 以上のように本発明は、カラー液晶用基板の製造工程に
おける透明電極の成膜工程において、複数の基板を一括
して減圧下で加熱乾燥する槽を二つ以上設け、カラーフ
ィルターおよび有機透明薄膜が形成されたガラス基板の
温度を少なくとも180℃以上で20分以上減圧下で加
熱乾燥したのち、基板のスパッタ面側の表面温度が18
0℃以上になるよう加熱制御し透明電極を形成するもの
で、基板からの脱ガスが十分行われたのちに透明電極が
形成されることにより、比抵抗が小さく透過率の高いカ
ラー液晶用基板を製造できる。
Effects of the Invention As described above, the present invention provides two or more tanks for heating and drying a plurality of substrates at once under reduced pressure in the transparent electrode film forming process in the manufacturing process of color liquid crystal substrates, and provides color filters and After heating and drying the glass substrate on which the organic transparent thin film has been formed at a temperature of at least 180°C or more under reduced pressure for 20 minutes or more, the surface temperature of the sputtered side of the substrate is 180°C.
A transparent electrode is formed by controlling the heating to 0°C or higher, and the transparent electrode is formed after sufficient degassing has occurred from the substrate, resulting in a color liquid crystal substrate with low resistivity and high transmittance. can be manufactured.

【図面の簡単な説明】[Brief explanation of drawings]

第1図aは本発明の第1の実施例の連続式スパッタ装置
の平面図、第1図すは同断面図、第2図は本発明の他の
連続式スパッタ装置の構成を示す説明図、第3図a、C
は本発明および従来のカラー液晶用基板の製造方法によ
るカラー液晶用基板の平面図、第3図すは同断面図、第
4図は従来のカラー液晶用基板の製造工程に使用される
連続式スパッタ装置の構成図である。 1・・・・・・ガラス基板、2・・・・・・カラーフィ
ルター3・・・・・・透明電極、4・・・・・・有機透
明薄膜、6・・・・・・予備加熱部、7・・・・・・本
加熱部、8・・・・・・カソード、9.10.15・・
・・・・槽、11.12.16・・・・・・バルブ、1
3,14.17・・・・・・収納槽。
FIG. 1a is a plan view of a continuous sputtering apparatus according to a first embodiment of the present invention, FIG. 1 is a cross-sectional view of the same, and FIG. , Figure 3 a, C
1 is a plan view of a color liquid crystal substrate according to the present invention and a conventional color liquid crystal substrate manufacturing method, FIG. 3 is a cross-sectional view of the same, and FIG. FIG. 2 is a configuration diagram of a sputtering apparatus. 1...Glass substrate, 2...Color filter 3...Transparent electrode, 4...Organic transparent thin film, 6...Preheating section , 7... main heating section, 8... cathode, 9.10.15...
...tank, 11.12.16...valve, 1
3,14.17...Storage tank.

Claims (4)

【特許請求の範囲】[Claims] (1)複数の基板を一括して減圧下で加熱乾燥する槽を
二つ以上備え、これらの槽から順次搬送供給される基板
を予備加熱する予備加熱部と、加熱しながらスパッタリ
ングする本加熱部とを有する槽を具備したことを特徴と
する連続式スパッタ装置。
(1) A preheating section that is equipped with two or more tanks that heat and dry multiple substrates at once under reduced pressure, and a preheating section that preheats the substrates that are sequentially transported and supplied from these tanks, and a main heating section that performs sputtering while heating. A continuous sputtering apparatus characterized by comprising a tank having:
(2)請求項1記載の連続式スパッタ装置を用いて、カ
ラーフィルターおよび有機透明薄膜が形成されたガラス
基板を減圧下で加熱乾燥したのち、透明電極を形成す工
程を有したカラー液晶用基板の製造方法。
(2) A color liquid crystal substrate comprising the step of heating and drying a glass substrate on which a color filter and an organic transparent thin film are formed under reduced pressure using the continuous sputtering apparatus according to claim 1, and then forming a transparent electrode. manufacturing method.
(3)基板の温度が少なくとも180℃以上で20分以
上減圧下で加熱乾燥されたのち、基板のスパッタ面側の
表面温度が少なくとも180℃以上になるよう予備加熱
および本加熱することを特徴とする請求項2記載のカラ
ー液晶用基板の製造方法。
(3) After the substrate is heated and dried under reduced pressure for at least 20 minutes at a temperature of at least 180°C, preheating and main heating are performed so that the surface temperature of the sputtered side of the substrate is at least 180°C or higher. The method for manufacturing a color liquid crystal substrate according to claim 2.
(4)透明電極として酸化インジウムと酸化錫とからな
る膜を形成することを特徴とする請求項2記載のカラー
液晶用基板の製造方法。
(4) The method for manufacturing a color liquid crystal substrate according to claim 2, characterized in that a film made of indium oxide and tin oxide is formed as the transparent electrode.
JP17017489A 1989-06-30 1989-06-30 Continuous type sputtering device and production of substrate for color liquid crystal Pending JPH0335216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17017489A JPH0335216A (en) 1989-06-30 1989-06-30 Continuous type sputtering device and production of substrate for color liquid crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17017489A JPH0335216A (en) 1989-06-30 1989-06-30 Continuous type sputtering device and production of substrate for color liquid crystal

Publications (1)

Publication Number Publication Date
JPH0335216A true JPH0335216A (en) 1991-02-15

Family

ID=15900066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17017489A Pending JPH0335216A (en) 1989-06-30 1989-06-30 Continuous type sputtering device and production of substrate for color liquid crystal

Country Status (1)

Country Link
JP (1) JPH0335216A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993614A (en) * 1996-04-01 1999-11-30 Toray Industries, Inc. Method of manufacturing substrate with thin film, and manufacturing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993614A (en) * 1996-04-01 1999-11-30 Toray Industries, Inc. Method of manufacturing substrate with thin film, and manufacturing apparatus

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