JPH0328836B2 - - Google Patents
Info
- Publication number
- JPH0328836B2 JPH0328836B2 JP20998982A JP20998982A JPH0328836B2 JP H0328836 B2 JPH0328836 B2 JP H0328836B2 JP 20998982 A JP20998982 A JP 20998982A JP 20998982 A JP20998982 A JP 20998982A JP H0328836 B2 JPH0328836 B2 JP H0328836B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- drain diffusion
- mos transistor
- substrate
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 30
- 230000015556 catabolic process Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 230000006378 damage Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20998982A JPS59100570A (ja) | 1982-11-30 | 1982-11-30 | Ｍｏｓトランジスタ |
| DE8383111730T DE3370245D1 (de) | 1982-11-27 | 1983-11-23 | A mos transistor |
| EP83111730A EP0110320B1 (en) | 1982-11-27 | 1983-11-23 | A mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20998982A JPS59100570A (ja) | 1982-11-30 | 1982-11-30 | Ｍｏｓトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59100570A JPS59100570A (ja) | 1984-06-09 |
| JPH0328836B2 true JPH0328836B2 (zh) | 1991-04-22 |
Family
ID=16582012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20998982A Granted JPS59100570A (ja) | 1982-11-27 | 1982-11-30 | Ｍｏｓトランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59100570A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62222676A (ja) * | 1986-03-25 | 1987-09-30 | Nec Corp | 高耐圧ｍｏｓトランジスタ |
| US4929991A (en) * | 1987-11-12 | 1990-05-29 | Siliconix Incorporated | Rugged lateral DMOS transistor structure |
| JP2713496B2 (ja) * | 1990-07-16 | 1998-02-16 | 松下電子工業株式会社 | 半導体装置 |
| JPH04107871A (ja) * | 1990-08-27 | 1992-04-09 | Matsushita Electron Corp | 半導体装置およびそれを用いたイグナイタ装置 |
| JPH0955496A (ja) * | 1995-08-17 | 1997-02-25 | Oki Electric Ind Co Ltd | 高耐圧ｍｏｓトランジスタ及びその製造方法 |
-
1982
- 1982-11-30 JP JP20998982A patent/JPS59100570A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59100570A (ja) | 1984-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4197400B2 (ja) | 炭化珪素半導体からなる半導体装置 | |
| US20190189798A1 (en) | Semiconductor device and manufacturing method of the same | |
| EP0110331B1 (en) | A mos transistor | |
| US6246092B1 (en) | High breakdown voltage MOS semiconductor apparatus | |
| JP3721172B2 (ja) | 半導体装置 | |
| JPH0766428A (ja) | 薄膜ｓｏｉ装置及びその製造方法 | |
| JPH0778978A (ja) | 縦型ｍｏｓ電界効果トランジスタ | |
| US5077590A (en) | High voltage semiconductor device | |
| US20070075367A1 (en) | SOI semiconductor component with increased dielectric strength | |
| JP2017126690A (ja) | 半導体装置 | |
| JP7158317B2 (ja) | 半導体装置 | |
| US5563437A (en) | Semiconductor device having a large sense voltage | |
| US4651178A (en) | Dual inverse zener diode with buried junctions | |
| JPH04216674A (ja) | 横形ｍｏｓ制御形サイリスタ | |
| JPH10321857A (ja) | 高破壊耐量ｍｏｓ型半導体装置 | |
| EP0110320A1 (en) | A MOS transistor | |
| JPH0328836B2 (zh) | ||
| EP0086010B1 (en) | Semiconductor device having a reduced surface field strength | |
| US20230155021A1 (en) | Silicon carbide semiconductor device | |
| JP4029549B2 (ja) | 半導体装置 | |
| US5270566A (en) | Insulated gate semiconductor device | |
| JPH07142731A (ja) | パワーデバイスおよびそれを形成するための方法 | |
| JPH04363068A (ja) | 半導体装置 | |
| JPH0328835B2 (zh) | ||
| US11677033B2 (en) | Passive element on a semiconductor base body |