JPH03285094A - Al-mn alloy electroplating bath and plating method using same - Google Patents
Al-mn alloy electroplating bath and plating method using sameInfo
- Publication number
- JPH03285094A JPH03285094A JP8325490A JP8325490A JPH03285094A JP H03285094 A JPH03285094 A JP H03285094A JP 8325490 A JP8325490 A JP 8325490A JP 8325490 A JP8325490 A JP 8325490A JP H03285094 A JPH03285094 A JP H03285094A
- Authority
- JP
- Japan
- Prior art keywords
- halide
- plating
- bath
- alloy electroplating
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 45
- 238000009713 electroplating Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 6
- 229910000914 Mn alloy Inorganic materials 0.000 title 1
- 150000004820 halides Chemical class 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 229910018131 Al-Mn Inorganic materials 0.000 claims abstract description 9
- 229910018461 Al—Mn Inorganic materials 0.000 claims abstract description 9
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- -1 aluminum halide Chemical class 0.000 claims description 9
- 239000011572 manganese Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 abstract 2
- 229910021380 Manganese Chloride Inorganic materials 0.000 abstract 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 125000000623 heterocyclic group Chemical group 0.000 abstract 1
- 239000011565 manganese chloride Substances 0.000 abstract 1
- 235000002867 manganese chloride Nutrition 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010960 cold rolled steel Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical compound N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- ABDVJABGTGHCPI-UHFFFAOYSA-N 3-ethyl-1h-imidazol-3-ium;chloride Chemical compound Cl.CCN1C=CN=C1 ABDVJABGTGHCPI-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（ｐｌ：文」二の利用分野）
本発明は、耐食性に優れた＾Ｉ−Ｎｎ合金を比較的低温
でめっきできるめっき浴およびその浴によるめっきｌｊ
法に関する。[Detailed description of the invention] (Field of application of pl: sentence) The present invention provides a plating bath that can plate an I-Nn alloy with excellent corrosion resistance at a relatively low temperature, and a plating method using the bath.
Regarding the law.
（従来技術）
＾Ｉ−Ｈｎ合金を電気めっきする場合、Ａｌが水素より
Ｘ１１−（化学的に卑であるため、水溶液系めっき浴を
用いてめっきすることは困難である。このため、従来高
温溶融型めっト浴、例えば、＾ＩＣＩ、−ＮａＣ１−Ｋ
（、Ｉ ＨｎＣ１２系溶融塩浴などで試みられている
。(Prior art) When electroplating an I-Hn alloy, it is difficult to plate using an aqueous plating bath because Al is chemically less base than hydrogen. Molten plating bath, e.g. ^ICI, -NaC1-K
(, I HnC12-based molten salt baths have been tried.
このめっき浴を用いて、浴温１５０℃以Ｊ―、電流密度
０．１〜８０＾／ｄ−２でめっきすれば、Ｍｎ形が最高
的３５％程度のＡｌ−Ｎｎ合金めっトできる。If this plating bath is used for plating at a bath temperature of 150°C or higher and a current density of 0.1 to 80^/d-2, an Al-Nn alloy plating with a maximum content of about 35% Mn type can be obtained.
（発明が解決しようとする問題、＋’ｆ、 ）しかしな
がら、このめっき裕は、浴温を１５０℃以上にしてめっ
きしなければならないため、取り扱いが難しく、しかも
、腐食性も強いため、装置の腐食防止に多額の費用を必
要とするものであった。また、めっき厚を１０μ以上に
すると、結晶がデンドライト状になり、外観、加工性が
低下してしまうものであった。(Problem to be solved by the invention, +'f,) However, this plating process requires plating at a bath temperature of 150°C or higher, which makes it difficult to handle and is also highly corrosive. A large amount of money was required to prevent corrosion. Furthermore, when the plating thickness is 10 μm or more, the crystals become dendrite-like, resulting in poor appearance and workability.
本発明は、このような問題を解決したＡｌ−Ｍｎ合金電
気めっ！浴およびその沼によるめっき方法を提供するも
のである。The present invention provides an Al-Mn alloy electroplating method that solves these problems! The present invention provides a plating method using a bath and its swamp.
（問題点を解決するための手段）
本発明は、Ａｌ−Ｍｎ合金めっき浴を下記（Ａ）、（Ｂ
）および（Ｃ）の成分を混合溶融してなるめっト浴とし
た。(Means for Solving the Problems) The present invention provides Al-Mn alloy plating baths as shown below (A) and (B).
) and (C) were mixed and melted to prepare a plating bath.
（Ａ ）フルミニラムハロゲン化物４０〜６７モル％。(A) Fluminiram halide 40 to 67 mol%.
（Ｂ）マンガンハロゲン化物０．０１〜４０モル％。(B) 0.01 to 40 mol% of manganese halide.
（Ｃ）フルキルピリジニウムハロゲン化物（ただし、フ
ル斗ル基の炭素数は１〜１２）またはモノ、νもしくは
トリフルキルイミダゾリウムハロゲン化物（ただし、ア
ルキル基の炭素数は１〜１２）２５〜６０モル％。(C) Furkylpyridinium halide (however, the number of carbon atoms in the fluor group is 1 to 12) or mono, ν, or triflukylimidazolium halide (however, the number of carbon atoms in the alkyl group is 1 to 12) 25 to 60 mole%.
そして、上記めっト浴を用いて、不活性雰囲気下で浴温
２５〜１５０℃、電流密度０．０１〜１００＾／ｄ−２
で直流電流またはパルス電流により電気めっきするよう
にした。Then, using the above plating bath, under an inert atmosphere, the bath temperature was 25 to 150°C, and the current density was 0.01 to 100^/d-2.
Electroplating was performed using direct current or pulsed current.
上記３成分は、いずれも常温では固体であるが、混合す
るだけで溶融して常温でも粘度の低い液体となる。しか
も、この液体は、アルキルピリジニウムハロゲン化物お
よびアルキルイミダゾリウムハロゲン化物が四級アンモ
ニウム塩であるので、アンモニウムイオンとハロゲン化
アルミニウム飴イオン、ハロゲン化マンガン錯イオンに
解離し、優れた導電性を有する。従って、この溶融塩浴
を用いれば、＾Ｉ−Ｎｎ介會を電気めっきすることかで
きる。All of the above three components are solid at room temperature, but just by mixing them, they melt and become a liquid with low viscosity even at room temperature. Moreover, since the alkylpyridinium halide and the alkylimidazolium halide are quaternary ammonium salts, this liquid dissociates into ammonium ions, aluminum halide candy ions, and manganese halide complex ions, and has excellent conductivity. Therefore, by using this molten salt bath, it is possible to electroplate the ^I-Nn interlayer.
アルミニウムハロゲン化物は、ハロゲン原子がＣＩ、Ｄ
ｒ１１％Ｆのものでも使用できるが、ＣＩのものが取り
扱い易く、好ましい、このハロゲン化物の配合は、４０
モル％未満であると、アルミニウムの電析が起こりにく
く、６７モル％を越えると、めっき浴の導電率が低下す
るので、４０〜６７モル％にする。In aluminum halide, the halogen atoms are CI, D
Although r11%F can also be used, CI is easier to handle and is preferred.This halide composition is 40%
If it is less than mol %, electrodeposition of aluminum is difficult to occur, and if it exceeds 67 mol %, the conductivity of the plating bath decreases, so it is set to 40 to 67 mol %.
マンガンハロゲン化物もハロゲン原子がＣＩ、口ｒ。In manganese halides, the halogen atom is CI.
Ｉ％Ｆのものでもよいが、マンガンの原子価が１価、１
価、■価、■価のハロゲン化物のものが好ましく、特に
ＭＩＩＣＩ２が好ましい。本発明では、加工性、耐食性
などの見地からＮｎ含有量が０．１〜４０％のＡｌ−Ｈ
ｎ合金をめっきすることを目的としているので、マンガ
ンハロゲン化物の配合は、０．０１〜４０モル％にする
。０．０１モル％未満であると、合金中のＮｎ含有量を
０．１％以上にすることが困難で、４０モル％より多く
すると、Ｎ。I%F may be used, but if the valence of manganese is monovalent or 1
Preferred are halides having a valence of 2, 2 and 2, with MIICI2 being particularly preferred. In the present invention, from the viewpoint of workability, corrosion resistance, etc., Al-H with an Nn content of 0.1 to 40% is used.
Since the purpose is to plate n-alloy, the manganese halide content is 0.01 to 40 mol %. If it is less than 0.01 mol%, it is difficult to make the Nn content in the alloy 0.1% or more, and if it is more than 40 mol%, N.
含有量が４０％を越えてしまう。The content exceeds 40%.
アルキルピリジニウムハロゲン化物お上びアルキルイミ
ダゾリウムハロゲン化物は、アルキル基が商分子量のも
のであると、常温で液体になりに＜＜、液体になったと
しても粘性が病くなるので、炭素数１−１２のものにす
る。ここで、アルキルピリジニウムハロゲン化物とは、
Ｎ−フルキルピリジニウムハロゲン化物のことであり、
また、アルキルイミダゾリウムハロゲン化物は、１−フ
ルキルイミダゾリ嘗ンムハロゲン化物、１．３−ノアル
キルイミグゾリウム、１，２．３−）リアルキルイミダ
ゾリウムハロゲン化物、１，３．４−）リアルキルイミ
ダゾリウムハロゲン化物のように、窒素原子に少なくと
も１個のアルキル基が導入されたものである。７１０デ
ン原子は、ＣＩ、Ｂ「、ＩＳＦのいずれでもよいが、Ｃ
１のものが取り扱い易い。この有機化合物の添加量は、
２５モル％未満であると、融点が高くなり、導Ｘｌｉ車
も低下すし、また、６０モル％を越えると、有機化合物
のカチオン濃度が商くなり、その還元反応が起こって、
電流効率の低下、めっき外観の低ドを招く。Alkylpyridinium halides and alkylimidazolium halides, if the alkyl group has a commercial molecular weight, will become liquid at room temperature. -Make it 12. Here, the alkylpyridinium halide is
It refers to N-furkylpyridinium halide,
In addition, the alkylimidazolium halides include 1-furkylimidazolyne halide, 1,3-noalkylimigzolium, 1,2.3-)realkylimidazolium halide, 1,3.4- ) At least one alkyl group is introduced into the nitrogen atom, such as realkylimidazolium halides. The 710 den atom may be any of CI, B', ISF, but C
1 is easy to handle. The amount of this organic compound added is
If it is less than 25 mol%, the melting point will be high and the Xli conductor will be low, and if it exceeds 60 mol%, the cation concentration of the organic compound will be low, and the reduction reaction will occur.
This results in a decrease in current efficiency and poor plating appearance.
本発明での好ましいＡｌ−Ｍｎ合金めっき浴を掲げレバ
、＾ＩＣＩ、−ＨｎＣ１２Ｎ−ブチルビリジニ會ンムク
ロライド、Ａｌｃ１３ ８ＩＩＣＩ２ １−エチルイミ
ダゾリウムクロライドであるが、後者の方が導電率が高
く、粘性が低いため、優れている。Preferred Al-Mn alloy plating baths in the present invention are ^ICI, -HnC12N-butyl pyridinium chloride, and Alc13 8IICI2 1-ethylimidazolium chloride, but the latter has higher conductivity and lower viscosity. ,Are better.
めっき浴に有機溶媒、特に芳香族有機溶媒を添加量ると
、粘性を低下させ、導電率を向上させることができ、ま
た、めっき層表面を平滑にできる。Adding an organic solvent, particularly an aromatic organic solvent, to the plating bath can reduce viscosity, improve conductivity, and smooth the surface of the plating layer.
このため、厚めつきしたい場合に電流密度を増大させて
高速めっきすることがで外、厚めつきしても外観は平滑
となる。この溶媒の添加量は、５〜８０ｖｏ１％にする
のが好ましい、５ｖｏ１％未満では添加効果が得られず
、８０ｖｏ１％を越えると、溶融塩と均一に混合するこ
とが困難になり、分離するためである。For this reason, when thick plating is desired, the current density can be increased to perform high-speed plating, and even if thick plating is desired, the appearance will be smooth. The amount of this solvent added is preferably 5 to 80 vol. If it is less than 5 vol.1%, the addition effect cannot be obtained, and if it exceeds 80 vol.1%, it becomes difficult to mix uniformly with the molten salt and it may separate. It is.
厚めつきした場合、めっき浴への有Ｗ！ｉ溶媒添加有無
に関係なく結晶がプントフィト状になる場合がある。か
かる場合にはＮを２個以上有する複素環化合物を添加す
ると、抑制できる。また、この化合物を添加すると、３
０μ以上の厚めつきにしても、めっき層は光沢があり、
広範囲の電流密度でめっトしてもめっ外層表面を平滑に
でき、均一電着性も向上する。このような複素環化合物
としては、ノアシン（例えば、とリミνン、ピリダジン
、ピラジンおよびこれらの誘導体、）ずルビツル酸なと
）、ナフチリジン、７よナノン、７エナントロリンなど
が優れている。If it is thick, please use a plating bath! i Crystals may become puntophyte-like regardless of whether or not a solvent is added. In such a case, it can be suppressed by adding a heterocyclic compound having two or more N atoms. Also, when this compound is added, 3
Even if the plating layer is thicker than 0μ, the plating layer remains glossy.
Even when plating is performed at a wide range of current densities, the surface of the outer plating layer can be made smooth, and uniform electrodeposition is improved. As such heterocyclic compounds, noacine (for example, torimin, pyridazine, pyrazine and their derivatives, zurbituric acid, etc.), naphthyridine, 7-nanone, 7-enanthroline, etc. are excellent.
上記化合物は、０．００１〜１モル％添加するのが望ま
しい、０．００１モル％未満であると、添加効果がなく
、１モル％より多く添加すると、晶型部側にめっき焼け
が発生する。It is desirable to add the above compound in an amount of 0.001 to 1 mol%.If it is less than 0.001 mol%, there is no effect of addition, and if it is added in an amount exceeding 1 mol%, plating burn will occur on the crystal mold side. .
本発明のめり外層によるめっきは、有機溶媒または／お
よび複素環化合物を添加した場合でも、不活性雰囲気下
で浴温２５〜１５０℃、電流密度０．０１〜１００Ａ／
ｄｍ”で直流電流またはパルス電流により電気めっきす
れば、外観、加工性および耐食性に優れたＡｌ Ｎ＋
＋合金めっきが得られる。浴温は、２５℃より低くする
と、浴の粘性が高くなり、電流密度が極端に小さくなり
、１５０℃より高くすると、アルキルピリジニウムハロ
ゲン化物やアルキルピリジニウムハロゲン化物の分解が
心配される。電流密度は、０．０１Ａ／ｄｍ２より低い
と、めっき皮膜が得られず、１００＾／ｄ鴫２より高く
なると、陰極に有機物の付着が生じる。電流密度を上げ
る場合、超音波攪拌、ジェット噴流攪拌を施すと、効果
がある。電流は、パルス電流を使用すると、めっき層が
緻密になる。Even when an organic solvent and/or a heterocyclic compound is added, plating using the outer layer of the present invention can be performed under an inert atmosphere at a bath temperature of 25 to 150°C and a current density of 0.01 to 100 A/
AlN+ has excellent appearance, workability, and corrosion resistance when electroplated with direct current or pulsed current at
+Alloy plating is obtained. When the bath temperature is lower than 25°C, the viscosity of the bath becomes high and the current density becomes extremely low, and when it is higher than 150°C, there is a fear that the alkylpyridinium halide and the alkylpyridinium halide may be decomposed. If the current density is lower than 0.01 A/dm2, no plating film will be obtained, and if the current density is higher than 100 A/dm2, organic matter will adhere to the cathode. When increasing the current density, it is effective to use ultrasonic stirring or jet stirring. When a pulsed current is used, the plating layer becomes denser.
（実施例）
板厚０ 、５ Ｍｉｌｌの冷延鋼板に常法により溶剤蒸
気洗浄、アルカリ脱脂および酸洗を施した後、乾燥して
、直ちに第１表に示す組成の溶融塩浴、電解条件で電気
めっきした。なお、電解は、冷延鋼板を陰極、アルミニ
ウム板（純度９９．９９％、板厚１．０ｍｍ）を陽極に
して、直流電流で行った。第２表にめっき層の特性を示
す。(Example) A cold-rolled steel plate with a thickness of 0 and 5 millimeters was subjected to solvent vapor cleaning, alkaline degreasing, and pickling in a conventional manner, and then dried and immediately subjected to a molten salt bath having the composition shown in Table 1 and electrolytic conditions. Electroplated with. The electrolysis was performed using a direct current using a cold-rolled steel plate as a cathode and an aluminum plate (purity 99.99%, plate thickness 1.0 mm) as an anode. Table 2 shows the properties of the plating layer.
第
２
表
（発明の効果）
以上のように、本発明のめっき浴は、従来のめっき浴よ
り低温でめっきできるので、取り扱いが容易であり、め
っき厚を１０μ以上にしても結晶はプントライＦ状にな
らない。Table 2 (Effects of the Invention) As described above, the plating bath of the present invention can perform plating at a lower temperature than conventional plating baths, so it is easy to handle, and even when the plating thickness is 10μ or more, the crystals remain in the Puntoli F shape. do not become.
Claims (5)
してなるＡｌ−Ｍｎ合金電気めっき浴。 （Ａ）アルミニウムハロゲン化物４０〜６７モル％。 （Ｂ）マンガンハロゲン化物０．０１〜４０モル％。 （Ｃ）アルキルピリジニウムハロゲン化物（ただし、ア
ルキル基の炭素数は１〜１２）またはモノ、ジもしくは
トリアルキルイミダゾリウムハロゲン化物（ただし、ア
ルキル基の炭素数は１〜１２）２５〜６０モル％。(1) An Al-Mn alloy electroplating bath formed by mixing and melting the following components (A), (B), and (C). (A) 40 to 67 mol% of aluminum halide. (B) 0.01 to 40 mol% of manganese halide. (C) Alkylpyridinium halide (however, the number of carbon atoms in the alkyl group is 1 to 12) or mono-, di- or trialkylimidazolium halide (however, the number of carbon atoms in the alkyl group is 1 to 12) 25 to 60 mol%.
ｎ合金電気めっき浴。(2) Al-M with organic solvent added to the plating bath of item 1
n-alloy electroplating bath.
合物を添加したＡｌ−Ｍｎ合金電気めっき浴。(3) An Al-Mn alloy electroplating bath in which a heterocyclic compound having two or more N atoms is added to the plating bath of item 1.
合物を添加したＡｌ−Ｍｎ合金電気めっき浴。(4) An Al-Mn alloy electroplating bath in which a heterocyclic compound having two or more N atoms is added to the plating bath of item 2.
性雰囲気下で浴温２５〜１５０℃、電流密度０．０１〜
１００Ａ／ｄｍ＾２で直流電流またはパルス電流により
電気めっきするＡｌ−Ｍｎ合金電気めっき方法。(5) Using any of the plating baths of items 1 to 4, under an inert atmosphere at a bath temperature of 25 to 150°C and a current density of 0.01 to
Al-Mn alloy electroplating method using direct current or pulsed current at 100A/dm^2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2083254A JP3061281B2 (en) | 1990-03-30 | 1990-03-30 | Al-Mn alloy electroplating bath |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2083254A JP3061281B2 (en) | 1990-03-30 | 1990-03-30 | Al-Mn alloy electroplating bath |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03285094A true JPH03285094A (en) | 1991-12-16 |
| JP3061281B2 JP3061281B2 (en) | 2000-07-10 |
Family
ID=13797203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2083254A Expired - Lifetime JP3061281B2 (en) | 1990-03-30 | 1990-03-30 | Al-Mn alloy electroplating bath |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3061281B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009197318A (en) * | 2008-01-22 | 2009-09-03 | Dipsol Chem Co Ltd | ELECTRIC Al-Zr-Mn ALLOY PLATING BATH USING ROOM TEMPERATURE MOLTEN SALT BATH AND PLATING METHOD USING THE SAME ELECTROPLATED FILM |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337570B (en) * | 2011-11-01 | 2013-09-04 | 淄博润博化工销售有限公司 | Method for co-depositing Al-Mn alloy plating layer in ionic liquid system |
| KR101568798B1 (en) * | 2015-01-15 | 2015-11-12 | 주식회사 티알켐텍 | Scraper for horizontal joint repair |
-
1990
- 1990-03-30 JP JP2083254A patent/JP3061281B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009197318A (en) * | 2008-01-22 | 2009-09-03 | Dipsol Chem Co Ltd | ELECTRIC Al-Zr-Mn ALLOY PLATING BATH USING ROOM TEMPERATURE MOLTEN SALT BATH AND PLATING METHOD USING THE SAME ELECTROPLATED FILM |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3061281B2 (en) | 2000-07-10 |
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