JPH03274694A - Organic thin film electroluminescence (el) element - Google Patents
Organic thin film electroluminescence (el) elementInfo
- Publication number
- JPH03274694A JPH03274694A JP2072202A JP7220290A JPH03274694A JP H03274694 A JPH03274694 A JP H03274694A JP 2072202 A JP2072202 A JP 2072202A JP 7220290 A JP7220290 A JP 7220290A JP H03274694 A JPH03274694 A JP H03274694A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic thin
- thin film
- insulating layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 24
- 238000005401 electroluminescence Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 abstract description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- WISWLZYHZLVSMO-UHFFFAOYSA-N 6-phenyl-2-(4-phenylphenyl)-1,3-benzoxazole Chemical compound C1=CC=CC=C1C1=CC=C(C=2OC3=CC(=CC=C3N=2)C=2C=CC=CC=2)C=C1 WISWLZYHZLVSMO-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- MASVCBBIUQRUKL-UHFFFAOYSA-N POPOP Chemical compound C=1N=C(C=2C=CC(=CC=2)C=2OC(=CN=2)C=2C=CC=CC=2)OC=1C1=CC=CC=C1 MASVCBBIUQRUKL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- APLQAVQJYBLXDR-UHFFFAOYSA-N aluminum quinoline Chemical compound [Al+3].N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12 APLQAVQJYBLXDR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical class C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical class C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 150000004059 quinone derivatives Chemical class 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/221—Static displays, e.g. displaying permanent logos
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明は平面光源やデイスプレィに使用される有機薄膜
ＥＬ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to an organic thin film EL element used for flat light sources and displays.
［従来の技術］
有機物質を原料としたＥＬ（電界発光〉素子は、その豊
富な材料数と分子レベルの合成技術で、安価な大面積フ
ィルム状フルカラー表示素子を実現するものとして注目
を集めている。有機薄膜を２層構造にした新しいタイプ
の有機薄膜発光素子（アプライド・フィジックス・レタ
ーズ、５１巻、９１３ページ、１９８７年）は、第３図
に示すように、強い蛍光を発する金属キレート化合物を
発光層３４に、アミン系材料を正孔伝導性有機物の正孔
注入Ｈ３３に使用したものである。有機薄膜３３および
３４と金属電極３５は、透明電極３２が表面に形成され
たガラス基板３１上に真空蒸着法で形成している。６〜
７ｖの直流印ＩＪ口で約１００ ｃｄ／ｍ２の輝度を得
ている。[Conventional technology] EL (electroluminescent) devices made from organic materials are attracting attention as a means of realizing inexpensive large-area film-like full-color display devices due to their abundant materials and molecular-level synthesis technology. A new type of organic thin-film light emitting device with a two-layer organic thin film structure (Applied Physics Letters, Vol. 51, p. 913, 1987) is a metal chelate compound that emits strong fluorescence, as shown in Figure 3. is used for the light-emitting layer 34, and an amine material is used for the hole injection H33 of a hole-conducting organic substance.The organic thin films 33 and 34 and the metal electrode 35 are formed on a glass substrate 31 on which a transparent electrode 32 is formed. It is formed on top by vacuum evaporation method.6~
A brightness of about 100 cd/m2 is obtained at the 7V DC mark IJ port.
有機薄膜ＥＬ素子の発光色は、有機蛍光体を適当に選択
することにより、赤から青までの発光が得られている。The organic thin film EL element can emit light from red to blue by appropriately selecting an organic phosphor.
この発光を利用して各種表示への応用が検討されている
。Applications to various displays using this light emission are being considered.
［発明が解決しようとする課題１
情報表示には発光部のパターン化が必要であるが、従来
報告されている有機薄膜ＥＬ素子の発光パターンは、下
部と上部の電極パターンの組み合わせで形成していた。[Problem to be solved by the invention 1 Information display requires patterning of the light emitting part, but the light emitting pattern of conventionally reported organic thin film EL elements is formed by a combination of lower and upper electrode patterns. Ta.
有機蛍光体よりなる発光層は有機溶剤に溶けるため、フ
ォトレジストを用いた上部電極の微細加工が困難であり
、そのため従来は、上部電極については金属マスクを使
用して形成していた。Since the light-emitting layer made of an organic phosphor is soluble in an organic solvent, it is difficult to microfabricate the upper electrode using a photoresist.Therefore, conventionally, the upper electrode has been formed using a metal mask.
しかしこの方法では、蒸着工程での金属マスクのずれや
、下部電極とのマスク位置合わせが容易でなく、かつ金
属マスクを用いた方法では基本的に有機薄１１ｇＥＬ素
子の微細化および複雑な表示パターンを表すことが困難
であった。即ち、単純な表示では表示情報量が少なく、
直流低電圧印カロで高い輝度が得られる有機ｉ［ＥＬ素
子の特徴を十分に生かした表示素子を提供できず、かつ
従来の技術では微細でかつ複雑な表示パターン化を可能
とすることができなかった。However, with this method, there is a risk of misalignment of the metal mask during the vapor deposition process, and it is difficult to align the mask with the lower electrode, and the method using a metal mask basically requires miniaturization of organic thin 11g EL elements and complicated display patterns. It was difficult to express In other words, in a simple display, the amount of displayed information is small;
It has not been possible to provide a display element that fully utilizes the characteristics of an organic EL element that can obtain high brightness with a low DC voltage applied, and it has not been possible to create fine and complex display patterns using conventional technology. There wasn't.
更に、通常素子に使用されている有機薄膜はほぼ透明で
あるために、従来の素子においては発光に関与していな
い金属電極３５が表示品質の低下を招いていた。Furthermore, since the organic thin film normally used in the device is almost transparent, in the conventional device, the metal electrode 35, which is not involved in light emission, causes a deterioration in display quality.
また、従来の有機簿膜ＥＬ素子にはＭ（Ｊを含む材料が
金属電極として使用されてきた。しかしこの材料は容易
に酸化されるため、酸化防止用のシールを施さなければ
ならなかった。しかし、電極端部では酸化防止用シール
はできないため、酸化によるコンタクト抵抗の増大が問
題となっていた。Furthermore, in conventional organic film EL devices, a material containing M (J) has been used as a metal electrode. However, since this material is easily oxidized, it was necessary to apply a seal to prevent oxidation. However, since an anti-oxidation seal cannot be formed at the end of the electrode, an increase in contact resistance due to oxidation has been a problem.
また、表示情報量の増大と共に金属電極４５の外部電源
との接続のための引き出し用配線パターンが複雑になり
、従来の金属マスクだけでは対応が困難になっていた。Further, as the amount of display information increases, the wiring pattern for connecting the metal electrode 45 to an external power source becomes complicated, making it difficult to handle the problem using only a conventional metal mask.
本発明は以上述べたような従来の課題を解決するために
なされたもので、微細な表示パターン化が可能で、かつ
信頼性の向上した有ＩＩＩ膜Ｅし素子を提供することを
目的とする。The present invention has been made in order to solve the conventional problems as described above, and an object thereof is to provide a III-layer E element that is capable of fine display patterning and has improved reliability. .
［課題を解決するための手段］
前述の課題解決のために本発明が提供する手段は、透明
な基板上に、透明電極、少なくとも１以上の電気注入層
と少なくとも１以上の有機蛍光体よりなる発光層との積
層膜および金属電極が順次積層された有機薄膜ＥＬ素子
において、透明電極と積層膜との開には、所望の箇所に
開口部を設けた絶縁層か形成されてなることを特徴とす
る有機薄１１ＷＥＬ素子である。[Means for Solving the Problems] Means provided by the present invention for solving the above-mentioned problems consists of a transparent electrode, at least one electric injection layer, and at least one organic phosphor on a transparent substrate. An organic thin film EL device in which a laminated film with a light-emitting layer and a metal electrode are sequentially laminated, characterized in that an insulating layer with openings provided at desired locations is formed between the transparent electrode and the laminated film. This is an organic thin 11WEL element.
上記発明において、絶縁層の少なくとも一部は黒色化さ
れていることを好適とし、また、絶縁層の少なくとも一
部はフォトレジストよりなることを好適とする。In the above invention, it is preferable that at least a part of the insulating layer is blackened, and it is preferable that at least a part of the insulating layer is made of photoresist.
本発明が提供する他の手段は、上記の有機簿膜Ｅｌ素子
であって、基板上には透明電極とは別に取り出し電極が
形成され、金属電極と前記取り出し電極とは、積層膜が
形成されていない素子非発光部で接続されてなることを
特徴とする有機薄膜ＥＬ素子である。Another means provided by the present invention is the above-mentioned organic film El element, in which an extraction electrode is formed on the substrate separately from the transparent electrode, and a laminated film is formed between the metal electrode and the extraction electrode. This is an organic thin film EL device characterized in that the device is connected at a non-light emitting portion.
［作用］
有機簿膜ＥＬ素子の発光強度は印加電圧に対して指数関
数的に増加するため、駆動電圧は素子膜厚に強く依存す
る。そこで電荷注入層と発光層からなる有機薄膜形成前
に絶縁層を形成し、発光させない部分は絶縁層を残し、
発光部は絶縁層を除去する。その後の手順は、従来の有
機薄１１１ＥＬ素子の作製と同じである。このようにし
て作製した本発明による素子は、下部電極と絶縁層によ
り形成された形状で発光パターンか決定できる。絶縁層
はフォトレジストを使用すれば容易にきれいな微細パタ
ーンが形成できる。したかって、従来金属マスクを使用
した方法では容易でなかった蒸着工程でのマスクのずれ
防止、下部電極との目合わせ、端部が明確で微１ｌ１１
な表示パターンの形成が、本発明により遠戚できる。[Function] Since the emission intensity of an organic thin film EL device increases exponentially with respect to the applied voltage, the driving voltage strongly depends on the device film thickness. Therefore, an insulating layer is formed before forming an organic thin film consisting of a charge injection layer and a light emitting layer, and the insulating layer is left in the areas where no light is emitted.
The insulating layer is removed from the light emitting part. The subsequent steps are the same as those for manufacturing a conventional organic thin 111EL element. In the device according to the present invention manufactured in this way, the light emitting pattern can be determined by the shape formed by the lower electrode and the insulating layer. If a photoresist is used for the insulating layer, a fine fine pattern can be easily formed. Therefore, it is possible to prevent the mask from shifting during the vapor deposition process, which was not easy with the conventional method using a metal mask, to align with the lower electrode, and to make the edges clear and fine.
Formation of a display pattern can be distantly related to the present invention.
さらに、この絶縁層を黒色化するか、あるいはこの絶縁
層の一部を黒色化することにより、従来の課題であった
発光に関与していない金属電極部による表示品質の低下
を改善できる。Furthermore, by blackening this insulating layer or by blackening a part of this insulating layer, it is possible to improve the conventional problem of deterioration in display quality due to metal electrode portions that are not involved in light emission.
また、上部の金属電極の取り出し電極として例えばＩＴ
Ｏを予め基板上に形成しておき、上述のような方法で形
成した絶縁層の一部に前記金属電極と取り出し電極を接
続するスルーホールを有機薄膜が形成されていない非発
光部に作製する。このようにすると、■下部電極と同時
に複雑な形状の取り出し電極が形成できると共に、上部
の金属電極パターンの自由度が大幅に向上する。ざらに
、■酸化され易い金属電極部だけを完全にシールするこ
とができる。In addition, as a lead-out electrode for the upper metal electrode, for example, IT
O is formed on the substrate in advance, and a through hole for connecting the metal electrode and the extraction electrode is formed in a part of the insulating layer formed by the method described above in a non-light-emitting part where the organic thin film is not formed. . In this way, it is possible to form a complex-shaped extraction electrode at the same time as the lower electrode, and the degree of freedom in the upper metal electrode pattern is greatly improved. In short, ① Only the metal electrode parts that are easily oxidized can be completely sealed.
このように、本発明によれば、従来金属電極に起因して
いた複雑な形状の電極パターン形成が困難であることや
、金属酸化に伴う素子劣化などの課題が解決できた。As described above, according to the present invention, problems such as difficulty in forming electrode patterns of complicated shapes and element deterioration due to metal oxidation, which were caused by conventional metal electrodes, can be solved.
［実施例］ 以下、本発明の実施例について詳細に説明する。[Example] Examples of the present invention will be described in detail below.
実施例１
第１図に示すように、ガラス基板１上にＩＴＯなどから
なる透明電極２を形成してからフォトレジストでパター
ニングし、絶縁層３を形成する。Example 1 As shown in FIG. 1, a transparent electrode 2 made of ITO or the like is formed on a glass substrate 1, and then patterned with photoresist to form an insulating layer 3.
その後、Ｎ、Ｎ、Ｎ’、Ｎ’−テトラフェニル−４，４
°−ジアミノビフェニル（以下、ジアミンと略記する。Then, N, N, N', N'-tetraphenyl-4,4
°-diaminobiphenyl (hereinafter abbreviated as diamine).
）からなる正孔注入層４を５ｏｏＡ、有機蛍光体として
トリス〈８−ハイドロキシキノリン〉アルミニウム（以
下、アルミキノリンと略記する。〉を使用して発光層５
を６００Ａ形威した。最後にＭＣＩとＩｎが１０：１で
混合した合金の金属電極６を電子ビーム蒸着法で１５０
０ Ａ形成して有機薄膜発光素子が完成する。このとき
下部電極との目合わせのずれや、蒸着工程でのマスクの
ずれなどが多少存在しても表示パターン品質を損なうこ
とはない。), and the light-emitting layer 5 was formed using tris<8-hydroxyquinoline>aluminum (hereinafter abbreviated as aluminumquinoline) as an organic phosphor.
The 600A model was used. Finally, a metal electrode 6 made of an alloy of MCI and In mixed at a ratio of 10:1 was formed using an electron beam evaporation method.
0 A is formed to complete the organic thin film light emitting device. At this time, even if there is some misalignment with the lower electrode or misalignment of the mask during the vapor deposition process, the display pattern quality will not be impaired.
この素子に約５Ｖの直流電圧を印加したところ、３００
ｃｄ／ｍ２の緑色の発光が得られた。０．２ｍｍの細
線パターンも明確に表示できた。従来はこのような細い
表示パターン形成は困難であった。When a DC voltage of about 5V was applied to this element, 300V
A green luminescence of cd/m2 was obtained. A 0.2 mm thin line pattern could also be clearly displayed. Conventionally, it has been difficult to form such a thin display pattern.
本発明では蛍光体としてトリス（８−ハイドロキシキノ
リン）アルミニウム有機蛍光体を用いたが、アントラセ
ン誘導体、ピレン誘導体、テトラセン誘導体、スチルベ
ン誘導体、ペリレン誘導体、キノン誘導体、フェナンス
レン誘導体、ナフタン誘導体、ナフタルイミド誘導体、
フタロペリノン誘導体、シクロペンタジェン誘導体、シ
アニン誘導体、その他可視領域で強い蛍光を発する有機
物を発光層５の材料に使用しても同様な効果が認められ
た。また、これらの有機蛍光体に、１０−５〜１Ｏ−２
ｎｏｆ程度のローダミン、シアニン、ピラン、クマリン
、フルオレン、ＰＯＰＯＰ、ＰＢＢＯ等、他の蛍光の強
い有機分子を更に添か口して、発光波長を変えることが
できる。ざらに、透明電極２はＩＴＯ以外に、ＺｎＯ：
Ａｊ＞や５ｒ１０２ ：Ｓｂ、Ｉｎ２Ｏ３、Ａｕなど
仕事関数力４．５８Ｖ以上ｉる導電性材料であればよい
。In the present invention, a tris(8-hydroxyquinoline) aluminum organic phosphor was used as the phosphor, but anthracene derivatives, pyrene derivatives, tetracene derivatives, stilbene derivatives, perylene derivatives, quinone derivatives, phenanthrene derivatives, naphthane derivatives, naphthalimide derivatives,
Similar effects were observed when phthaloperinone derivatives, cyclopentadiene derivatives, cyanine derivatives, and other organic substances that emit strong fluorescence in the visible region were used as materials for the light-emitting layer 5. In addition, these organic phosphors contain 10-5 to 1O-2.
The emission wavelength can be changed by further adding other highly fluorescent organic molecules such as nof of rhodamine, cyanine, pyran, coumarin, fluorene, POPOP, and PBBO. In general, the transparent electrode 2 is made of ZnO in addition to ITO:
Aj> or 5r102: Any conductive material having a work function power of 4.58 V or more, such as Sb, In2O3, or Au, may be used.
実施例２
素子構造は実施例１と同じであるが、本実施例では絶縁
層３にカーボンブラックをフォトレジストに５〜１０重
量％混合したものを用いた。カーボンブラック以外にも
、紫外光は透過するが可視光領域では吸収を示すような
色素を使用してもよい。Example 2 The element structure is the same as in Example 1, but in this example, a mixture of 5 to 10% by weight of carbon black and photoresist was used for the insulating layer 3. In addition to carbon black, a dye that transmits ultraviolet light but absorbs visible light may also be used.
このような素子では表示部以外は黒色となり、従来の素
子に比べてコントラストや表示品質の向上が認められた
。In such an element, the area other than the display part was black, and improvements in contrast and display quality were observed compared to conventional elements.
実施例３
素子ｗ４造は実施例１と同じであるが、第２図に示すよ
うに、上部の金属電極２６の取り出し電極２７をガラス
基板２１上に形成し、その上に形成した絶縁層２３の素
子非発光部に開口を形成し、金属電極２６と取り出し電
極２７を接続している。金属電極の上部は絶縁膜で覆わ
れており、完全に酸化防止シルされている。この構造に
より、大気中ても５００から１ｏｏｏ時間の寿命を示す
有機薄膜ＥＬ素子の実現が可能となった。Example 3 The structure of the element w4 is the same as in Example 1, but as shown in FIG. An opening is formed in the non-light emitting part of the element, and the metal electrode 26 and the extraction electrode 27 are connected. The upper part of the metal electrode is covered with an insulating film and is completely sealed to prevent oxidation. This structure has made it possible to realize an organic thin film EL device that has a lifetime of 500 to 100 hours even in the atmosphere.
［発明の効果］
以上述べたように、本発明によれば、従来の有機薄膜Ｅ
Ｌ素子に比べてより微細パターンの表示が可能で、かつ
上部の金属電極蒸着時のマスクのずれに対して余裕のあ
る素子が実現できる。更に、背景を黒色とすることによ
り、従来よりもコントラスト・表示品質のよい素子を提
供することが可能となった。[Effects of the Invention] As described above, according to the present invention, the conventional organic thin film E
It is possible to realize an element that is capable of displaying a finer pattern than the L element, and has a margin for mask displacement during vapor deposition of the upper metal electrode. Furthermore, by using a black background, it is possible to provide an element with better contrast and display quality than before.
また、上部電極の取り出し電極を形成して、上部の金属
電極部を酸化防止シールできる構造とすることで、素子
の大幅な信頼性向上が可能となった。Furthermore, by forming an extraction electrode for the upper electrode and creating a structure in which the upper metal electrode part can be sealed to prevent oxidation, it has become possible to significantly improve the reliability of the device.
第１図は本発明の一実施例による有機薄膜ＥＬ素子の断
面図、第２図は本発明の別の一実施例による有機薄１１
１ＥＬ素子の断面図、第３図は従来例による有機薄膜Ｅ
Ｌ素子の一例の断面図である。
ｉ 、 ２１．３１・・・ガラス板
２、２２．３２・・・透明電極
３．２３・・・絶縁層
４、２４．３３・・・正孔注入層
５、２５．３４・・・発光層
６、２６．３５・・・金属電極
２７・・・取り出し電極
２８・・・保護層FIG. 1 is a sectional view of an organic thin film EL device according to an embodiment of the present invention, and FIG. 2 is a sectional view of an organic thin film EL device according to another embodiment of the present invention.
A cross-sectional view of a 1EL element, Figure 3 shows a conventional organic thin film E.
FIG. 3 is a cross-sectional view of an example of an L element. i, 21.31...Glass plate 2, 22.32...Transparent electrode 3.23...Insulating layer 4, 24.33...Hole injection layer 5, 25.34...Light emitting layer 6, 26.35...Metal electrode 27...Takeout electrode 28...Protective layer
Claims (2)
電気注入層と少なくとも１以上の有機蛍光体よりなる発
光層との積層膜および金属電極が順次積層された有機薄
膜ＥＬ素子において、透明電極と積層膜との間には、所
望の箇所に開口部を設けた絶縁層が形成されてなること
を特徴とする有機薄膜ＥＬ素子。(1) In an organic thin film EL element in which a transparent electrode, a laminated film of at least one or more electricity injection layer and a light emitting layer made of at least one or more organic phosphor, and a metal electrode are sequentially laminated on a transparent substrate, a transparent An organic thin film EL device characterized in that an insulating layer with openings provided at desired locations is formed between an electrode and a laminated film.
つて、基板上には透明電極とは別に取り出し電極が形成
され、金属電極と前記取り出し電極とは、積層膜が形成
されていない素子非発光部で接続されてなることを特徴
とする有機薄膜ＥＬ素子。(2) The organic thin film EL device according to claim (1), wherein an extraction electrode is formed on the substrate separately from the transparent electrode, and a laminated film is formed between the metal electrode and the extraction electrode. 1. An organic thin film EL device characterized in that an organic thin film EL device is connected to a non-light emitting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2072202A JPH03274694A (en) | 1990-03-23 | 1990-03-23 | Organic thin film electroluminescence (el) element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2072202A JPH03274694A (en) | 1990-03-23 | 1990-03-23 | Organic thin film electroluminescence (el) element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03274694A true JPH03274694A (en) | 1991-12-05 |
Family
ID=13482413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2072202A Pending JPH03274694A (en) | 1990-03-23 | 1990-03-23 | Organic thin film electroluminescence (el) element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03274694A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140369A (en) * | 1997-07-15 | 1999-02-12 | Casio Comput Co Ltd | Electroluminescent element |
| WO1999065010A1 (en) * | 1998-06-10 | 1999-12-16 | Matsushita Electric Industrial Co., Ltd. | Display device |
| US6132280A (en) * | 1998-10-28 | 2000-10-17 | Tdk Corporation | System and process for fabricating an organic electroluminescent display device |
| JP2001102169A (en) * | 1999-10-01 | 2001-04-13 | Sanyo Electric Co Ltd | El display |
| US6307317B1 (en) | 1998-05-15 | 2001-10-23 | Tdk Corporation | Organic electroluminescent display and method for its manufacture |
| US6339291B1 (en) | 1998-04-10 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device, and its fabrication method |
| JP2002033185A (en) * | 2000-05-06 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Light emitting device and electric apparatus |
| JP2002329583A (en) * | 2001-05-02 | 2002-11-15 | Sony Corp | Organic electro-luminescence display device |
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| JP2007234526A (en) * | 2006-03-03 | 2007-09-13 | Showa Denko Kk | Display element |
| US7459849B2 (en) | 2000-09-18 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
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| JP2009059705A (en) * | 2008-10-02 | 2009-03-19 | Seiko Epson Corp | Display device |
| US7511422B2 (en) * | 2003-10-02 | 2009-03-31 | Kabushiki Kaisha Toyota Jidoshokki | Organic electroluminescent element with specific structure connecting luminescent regions and organic electroluminescent device including the same |
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-
1990
- 1990-03-23 JP JP2072202A patent/JPH03274694A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140369A (en) * | 1997-07-15 | 1999-02-12 | Casio Comput Co Ltd | Electroluminescent element |
| US6339291B1 (en) | 1998-04-10 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device, and its fabrication method |
| US6307317B1 (en) | 1998-05-15 | 2001-10-23 | Tdk Corporation | Organic electroluminescent display and method for its manufacture |
| WO1999065010A1 (en) * | 1998-06-10 | 1999-12-16 | Matsushita Electric Industrial Co., Ltd. | Display device |
| US6132280A (en) * | 1998-10-28 | 2000-10-17 | Tdk Corporation | System and process for fabricating an organic electroluminescent display device |
| US6867541B2 (en) | 1999-10-01 | 2005-03-15 | Sanyo Electric Co., Ltd. | Line structure in electroluminescence display device |
| JP2001102169A (en) * | 1999-10-01 | 2001-04-13 | Sanyo Electric Co Ltd | El display |
| JP2002033185A (en) * | 2000-05-06 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | Light emitting device and electric apparatus |
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| US9263503B2 (en) | 2000-09-18 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
| US7459849B2 (en) | 2000-09-18 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
| US8618732B2 (en) | 2000-09-18 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
| US8421352B2 (en) | 2000-09-18 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2012069525A (en) * | 2000-09-18 | 2012-04-05 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
| US6921627B2 (en) | 2001-02-15 | 2005-07-26 | Samsung Sdi Co., Ltd. | Organic electroluminescent device with self-aligned insulating fillers and method for manufacturing the same |
| JP2002329583A (en) * | 2001-05-02 | 2002-11-15 | Sony Corp | Organic electro-luminescence display device |
| JP2017224616A (en) * | 2002-12-19 | 2017-12-21 | 株式会社半導体エネルギー研究所 | Display device |
| US7511422B2 (en) * | 2003-10-02 | 2009-03-31 | Kabushiki Kaisha Toyota Jidoshokki | Organic electroluminescent element with specific structure connecting luminescent regions and organic electroluminescent device including the same |
| JP2007234526A (en) * | 2006-03-03 | 2007-09-13 | Showa Denko Kk | Display element |
| JP2009059705A (en) * | 2008-10-02 | 2009-03-19 | Seiko Epson Corp | Display device |
| JP2009026770A (en) * | 2008-10-02 | 2009-02-05 | Seiko Epson Corp | Display device |
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