JPH03267377A - Surface treatment of aluminum - Google Patents
Surface treatment of aluminumInfo
- Publication number
- JPH03267377A JPH03267377A JP6786690A JP6786690A JPH03267377A JP H03267377 A JPH03267377 A JP H03267377A JP 6786690 A JP6786690 A JP 6786690A JP 6786690 A JP6786690 A JP 6786690A JP H03267377 A JPH03267377 A JP H03267377A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- neutral
- electroless
- aluminum
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052782 aluminium Inorganic materials 0.000 title claims description 11
- 238000004381 surface treatment Methods 0.000 title claims description 3
- 238000007747 plating Methods 0.000 claims abstract description 19
- 230000007935 neutral effect Effects 0.000 claims abstract description 9
- 238000005238 degreasing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 8
- 238000005237 degreasing agent Methods 0.000 abstract description 5
- 239000013527 degreasing agent Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract description 3
- 229920003986 novolac Polymers 0.000 abstract description 3
- 230000002378 acidificating effect Effects 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract description 2
- 239000003513 alkali Substances 0.000 abstract description 2
- 238000007772 electroless plating Methods 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、アルミニウム電極を使用した電子回路基板の
電極の表面処理の方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of surface treatment of electrodes of electronic circuit boards using aluminum electrodes.
本発明は絶縁物基板上に形成されたアルミニウム薄膜パ
ターンのめっき処理によって、中性の脱脂を行うことに
よりめっきレジストを破損することなく、部分的に無電
解めっきを析出させ微小範囲で精密なめっきパターンを
得るようにしたものである。The present invention utilizes a plating process for an aluminum thin film pattern formed on an insulating substrate, and performs neutral degreasing to partially deposit electroless plating without damaging the plating resist, resulting in precise plating in a minute range. This is to obtain a pattern.
従来、アルミニウム薄膜の部分的な無電解ニッケルめっ
きは、耐アルミニウム性のめっきレジストをスクリーン
印刷した後、pH13以上の強アルカリ性の脱脂を行い
ジンケート処理又は塩化パラジウムによる処理を行った
後、ニッケルーリンを析出させる方法がとられていた。Conventionally, partial electroless nickel plating on aluminum thin films has been carried out by screen printing an aluminum-resistant plating resist, degreasing with a strong alkaline pH of 13 or higher, performing zincate treatment or treatment with palladium chloride, and then applying nickel-phosphorus. A method of precipitation was used.
近年電子部品は、より小型化、高密度化が求められてお
り、mlパターンも微小化の要請がでている、しかしそ
れに応えたスクリーン印刷によるレジストの印刷精度で
は要求品質を満足できない状況にある。そこで、ホトプ
ロセスとめっきによる精度の高いレジストパターン形成
が適用され、そこにはフォトレジストが広範囲に用いら
れている。上記のようなめっき処理においては、脱脂工
程とジンケート処理の工程が強アルカリ性であるためポ
ジタイプのレジストが溶解し、そのためフオドレジスト
による微細なバターニングができない欠点があった。In recent years, electronic components have been required to be smaller and more dense, and there has been a demand for smaller ML patterns.However, the printing accuracy of the resist produced by screen printing cannot meet the required quality. . Therefore, highly accurate resist pattern formation by photoprocessing and plating is applied, and photoresists are widely used there. In the above-mentioned plating process, the degreasing process and the zincate process are strongly alkaline, which causes the positive type resist to dissolve, and therefore has the disadvantage that fine patterning cannot be achieved using a fluoride resist.
上記問題点を解決するために、本発明においては脱脂工
程で強アルカリ系脱脂剤に硫酸塩を付加し、pHを中性
に調整することと塩化パラジウムによる活性化処理を施
したのち無電解ニッケルめっきを施す方法により、耐ア
ルカリ性が劣るポジタイプのフォトレジストの使用を可
能にした。In order to solve the above problems, in the present invention, sulfate is added to a strong alkaline degreasing agent in the degreasing process to adjust the pH to neutrality, and after activation treatment with palladium chloride, electroless nickel The plating method made it possible to use positive-type photoresists, which have poor alkali resistance.
ポジタイプのフォトレジスト材料は通常、ノボラック系
樹脂が用いられており、酸性から中性までの領域では密
着性や材料強度等問題ないが、アルカリ性溶液では容易
に樹脂の溶解が起こり、この性質を利用して現像とレジ
スト除去が行われている。ここで上記の様に脱脂剤に硫
酸塩を加えpHが中性になるように調整することにより
一〇Hの作用によるレジストの溶解を防止することがで
きる。Positive type photoresist materials usually use novolac resin, and there are no problems with adhesion or material strength in the acidic to neutral range, but the resin easily dissolves in alkaline solutions, so this property can be used to Development and resist removal are then performed. Here, by adding sulfate to the degreasing agent and adjusting the pH to neutral as described above, it is possible to prevent the resist from dissolving due to the action of 10H.
以下にこの発明の詳細な説明する。 This invention will be explained in detail below.
実施例−1
アルミナセラミック基板に、4μCIをターゲット材料
とするスパッタリングで0.8−のアルミニウム層を形
成する。続いて、スピンナーによりノボラック系樹脂の
ポジタイプフォトレジストを0゜9111111塗布す
る。さらに高圧水銀灯による露光と0゜5%NaOHに
よる現像を行い基板上にレジストパターンを形成する。Example 1 A 0.8-layer aluminum layer is formed on an alumina ceramic substrate by sputtering using 4μCI as a target material. Subsequently, a positive type photoresist of novolac resin is applied at a thickness of 0°9111111 using a spinner. Further, exposure with a high-pressure mercury lamp and development with 0.5% NaOH are performed to form a resist pattern on the substrate.
めっき処理は第1図に示す工程を行い、始めに中性脱脂
剤として■キサ4社製のNG −30を30g/lの水
溶液とし、35℃で〜1分25秒浸漬する。次にフッ化
アンモニウム0.5g/lの水溶液に18秒〜45秒浸
漬し、塩化パラジウム0.1g/fの水溶液に18秒浸
漬したのち、N1−Pめっき液として、奥野製薬社製の
商品名トノプニコロン50を200 g /l、80℃
、5分間の処理で、N1−P被膜を3節析出させた後、
有機アルシカリン容液でレジストのリムブを行い、最後
に密着性向上のための熱処理を大気中で200℃、30
分行った。The plating process is carried out as shown in FIG. 1. First, 30 g/l of NG-30 manufactured by Kisa 4 Co., Ltd. is used as a neutral degreasing agent in an aqueous solution and immersed at 35 DEG C. for 1 minute and 25 seconds. Next, it was immersed in an aqueous solution of ammonium fluoride 0.5 g/l for 18 to 45 seconds, and then immersed in an aqueous solution of palladium chloride 0.1 g/f for 18 seconds. Tonopnicolone 50 at 200 g/l, 80℃
, after depositing 3 nodes of N1-P film in a 5-minute treatment,
The resist was removed with an organic alcicarine solution, and finally, heat treatment was performed in the air at 200°C for 30°C to improve adhesion.
I went for a minute.
このように形成したN1−Pの部分めっきは外観くもり
、しま等は認められず、均一な析出をしており、セロテ
ープテストで剥離を示さず十分な密着性が得られた。The N1-P partial plating thus formed had a uniform appearance without cloudy appearance or stripes, and exhibited sufficient adhesion with no peeling in the cellophane tape test.
実施例−2
アルミナセラミンク基板上に真空蒸着により1.2−の
アルミニウム被膜を形成した後、フォトリソグラフィー
技術を用いてワイヤーポンディングバットと配線パター
ンを形成する。続いてポジタイプのレジストでボンディ
ングバットのみアルミニウム表面が露出するようにレジ
ストパターンを形成する。以下実施例1と同一のめっき
処理条件でN1−Pめっきをバット部に形成し、続いて
無電解金めっきで g/190℃で5分間処理し、金め
つき層を0.1踊形成した。次にレジストをリムーブし
た後、250℃、 30分の熱処理を行った。Example 2 After forming a 1.2-inch aluminum film on an alumina ceramic substrate by vacuum deposition, a wire bonding butt and a wiring pattern are formed using photolithography. Next, a resist pattern is formed using a positive type resist so that only the aluminum surface of the bonding butt is exposed. N1-P plating was formed on the butt part under the same plating conditions as in Example 1, and then electroless gold plating was performed at g/190°C for 5 minutes to form a gold plating layer of 0.1 dc. . Next, after removing the resist, heat treatment was performed at 250° C. for 30 minutes.
上記のように形成したボンディングバットに25虜中の
金ワイヤーをボンディングし、シリコン系樹脂で封止し
、80℃、85%の環境で1000時間保存し、信頼性
を試験したところ、金めつき部分の腐食は認められなか
った。25 pieces of gold wire were bonded to the bonding bat formed as above, sealed with silicone resin, stored in an environment of 80°C and 85% for 1000 hours, and tested for reliability. No corrosion was observed in any part.
この発明は以上説明したように脱脂剤を中性にてフォト
レジストの使用を可能とすることにより、微小面積のア
ルミニウム電極の信頼性を高める効果がある。As explained above, the present invention has the effect of increasing the reliability of aluminum electrodes having a minute area by enabling the use of photoresists with neutral degreasing agents.
第1図はこの発明にががるめっきプロセスの流れを示す
工程図である。
以上FIG. 1 is a process diagram showing the flow of the plating process according to the present invention. that's all
Claims (1)
処理において、基板洗浄工程で中性の脱脂を行うことを
特徴とするアルミニウムの表面処理方法。An aluminum surface treatment method comprising performing electroless nickel plating on the surface of an aluminum thin film, which comprises performing neutral degreasing in a substrate cleaning step.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6786690A JPH03267377A (en) | 1990-03-16 | 1990-03-16 | Surface treatment of aluminum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6786690A JPH03267377A (en) | 1990-03-16 | 1990-03-16 | Surface treatment of aluminum |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03267377A true JPH03267377A (en) | 1991-11-28 |
Family
ID=13357277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6786690A Pending JPH03267377A (en) | 1990-03-16 | 1990-03-16 | Surface treatment of aluminum |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03267377A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1426464A1 (en) * | 2002-12-04 | 2004-06-09 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding substrate |
EP1562411A1 (en) * | 2004-02-06 | 2005-08-10 | Dowa Mining Co., Ltd. | Metal/ceramic bonding member and method for producing same |
-
1990
- 1990-03-16 JP JP6786690A patent/JPH03267377A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1426464A1 (en) * | 2002-12-04 | 2004-06-09 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding substrate |
EP1562411A1 (en) * | 2004-02-06 | 2005-08-10 | Dowa Mining Co., Ltd. | Metal/ceramic bonding member and method for producing same |
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