JPH03159102A - Formation of electrode of ceramic electronic part - Google Patents
Formation of electrode of ceramic electronic partInfo
- Publication number
- JPH03159102A JPH03159102A JP1298233A JP29823389A JPH03159102A JP H03159102 A JPH03159102 A JP H03159102A JP 1298233 A JP1298233 A JP 1298233A JP 29823389 A JP29823389 A JP 29823389A JP H03159102 A JPH03159102 A JP H03159102A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electroless plating
- nickel
- ceramic electronic
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 27
- 230000015572 biosynthetic process Effects 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 238000007772 electroless plating Methods 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims description 16
- 238000007598 dipping method Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 abstract description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000365 copper sulfate Inorganic materials 0.000 abstract description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 abstract description 2
- 239000001472 potassium tartrate Substances 0.000 abstract description 2
- 229940111695 potassium tartrate Drugs 0.000 abstract description 2
- 235000011005 potassium tartrates Nutrition 0.000 abstract description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 abstract description 2
- 239000001433 sodium tartrate Substances 0.000 abstract description 2
- 229960002167 sodium tartrate Drugs 0.000 abstract description 2
- 235000011004 sodium tartrates Nutrition 0.000 abstract description 2
- 229910002666 PdCl2 Inorganic materials 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 abstract 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 abstract 1
- 235000011150 stannous chloride Nutrition 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はセラミック電子部品の電極形成法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a method for forming electrodes of ceramic electronic components.
従来の技術
近年、セラミック基板、セラミスタ、サーミスタ、バリ
スタ、圧電体などの素子などからなるセラミック電子部
品に電極を形成する方法としては無電解メッキ法、半田
ディップ法などが用いられている。以下図面を参照しな
がら上述したセラミック素体の電極形成方法について説
明する。BACKGROUND OF THE INVENTION In recent years, electroless plating, solder dipping, and the like have been used to form electrodes on ceramic electronic components such as ceramic substrates, ceramic substrates, thermistors, varistors, piezoelectric elements, and the like. A method for forming electrodes on the ceramic body described above will be described below with reference to the drawings.
第４図は上述したような従来のセラミック電子部品の電
極形成方法を示すものである。同図において、１はセラ
ミック素体、２はニッケルを主成分とした第１電極、３
は銅もしくは半田を主成分とした第２電極で、第１電極
２であるニッケル電極は無電解メッキ法により形成した
後、この上に第２電極３としての銅電極および半田電極
を第１電極２と同じ無電解メッキ法によって形成し、さ
らに必要に応じて第２電極３の銅電極上には第３電極（
図面では省略）としてメッキ法もしくはディップ法で半
田電極を形成していた。FIG. 4 shows a conventional method for forming electrodes of ceramic electronic components as described above. In the figure, 1 is a ceramic body, 2 is a first electrode mainly composed of nickel, and 3 is a ceramic body.
is a second electrode whose main component is copper or solder. After forming the nickel electrode as the first electrode 2 by electroless plating, a copper electrode as the second electrode 3 and a solder electrode are placed on top of the nickel electrode as the first electrode. It is formed by the same electroless plating method as in 2, and if necessary, a third electrode (
(not shown in the drawings), solder electrodes were formed by plating or dipping.
発明が解決しようとする課題
このような従来の方法では、第１電極２であるニッケル
電極を形成した後、直ちに第２電極３である銅もしくは
半田電極を形成するため、セラミック素体１と第１電極
２問および、第１電極２と第２電極３間との接着性が弱
く、さらにこの上にリード線を半田などで接続するとそ
のリード線の接着性が十分ではないという課題があった
。Problems to be Solved by the Invention In such a conventional method, after forming the nickel electrode as the first electrode 2, the copper or solder electrode as the second electrode 3 is immediately formed. There were two problems with one electrode, and the adhesiveness between the first electrode 2 and the second electrode 3 was weak, and furthermore, when a lead wire was connected on top of this with solder, the adhesiveness of the lead wire was not sufficient. .
本発明は、このような課題を解決するもので、接着性の
強固なセラミック素体の電極を提供することを目的とす
るものである。The present invention has been made to solve these problems, and an object of the present invention is to provide an electrode made of a ceramic body with strong adhesive properties.
課題を解決するための手段
この課題を解決するため本発明は、セラミック電子部品
上に無電解メッキ法により形成した第１電極であるニッ
ケル電極を、１００℃〜３００ ’Ｃの温度範囲で熱処
理し、この上に第２電極として銅を主成分とする電極を
無電解メッキ法で形成するか、または熱処理を施したニ
ッケル電極上に第２電極として半田を主成分とする電極
を無電解メッキ法で形成するか、さらに好ましくは第２
電極である銅電極の上に、第３電極として半田を主成分
とする電極を無電解メッキ法もしくはディップ法で形成
するものである。Means for Solving the Problem In order to solve this problem, the present invention heat-treats a nickel electrode, which is the first electrode, formed on a ceramic electronic component by electroless plating at a temperature range of 100°C to 300'C. , an electrode mainly composed of copper is formed thereon as a second electrode by an electroless plating method, or an electrode mainly composed of solder is formed as a second electrode on a heat-treated nickel electrode by an electroless plating method. or more preferably a second
On top of the copper electrode, a third electrode whose main component is solder is formed by electroless plating or dipping.
作用
この方法により、第１電極であるニッケル電極を熱処理
しているため、（１）セラミック素体とニッケル電極と
の接着性が向上する。（２）ニッケル電極の粒状化が進
み、ニッケル電極の上に第２電極さらには第３電極を形
成したとき、粒状化による第２電極および第３電極との
接着面積が増大して、第１電極と第２電極、第２電極と
第３電極との接着性が向上することとなる。Effect: Since the nickel electrode, which is the first electrode, is heat-treated by this method, (1) the adhesion between the ceramic body and the nickel electrode is improved; (2) When granulation of the nickel electrode progresses and a second electrode and even a third electrode are formed on the nickel electrode, the adhesion area with the second and third electrodes increases due to the granulation, and the first This results in improved adhesion between the electrode and the second electrode, and between the second electrode and the third electrode.
実施例
以下、図面を参照しながら本発明の実施例について説明
する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
（実施例１）
第１図は本発明の第１の実施例により形成したセラミッ
ク電子部品を示すものである。(Example 1) FIG. 1 shows a ceramic electronic component formed according to a first example of the present invention.
第１図におしコて、４はアルミナ基板およびＺｎＯ系バ
リスタ素子からなるセラミック素体、５は第１電極とし
てのニッケル電極で、５ｎＣｉ！２゜ＰｄＣｆ！２で前
処理した後、硫酸ニッケル、次亜リン酸ナトリウム系の
メッキ浴で無電解メッキし、その厚みを１．５μｍとし
た。この後、温度０℃（従来の方法）、１００℃、２０
０℃、３００℃。In FIG. 1, 4 is a ceramic body consisting of an alumina substrate and a ZnO-based varistor element, 5 is a nickel electrode as a first electrode, and 5nCi! 2゜PdCf! After pretreatment in Step 2, electroless plating was performed in a plating bath containing nickel sulfate and sodium hypophosphite to give a thickness of 1.5 μm. After this, the temperature was 0℃ (conventional method), 100℃, 20℃
0℃, 300℃.
３５０℃で２時間熱処理し、この上に硫酸銅、酒石酸ナ
トリウム・カリウム系のメッキ浴で無電解メッキし、厚
さ１．０μｍの第２電極である＃Ｉ電極６を形成した。Heat treatment was performed at 350° C. for 2 hours, and electroless plating was performed thereon in a plating bath containing copper sulfate and sodium/potassium tartrate to form #I electrode 6, which is a second electrode with a thickness of 1.0 μm.
（実施例２）
第２図は本発明の第２の実施例により形成したセラミッ
ク電子部品を示すものである。(Example 2) FIG. 2 shows a ceramic electronic component formed according to a second example of the present invention.
第２図において、７はＢａＴｉＯ３系のセラミスタ素子
およびＰＣＭ系の圧電素子である。５は第１電極として
のニッケル電極で、これは実施例Ｉと同様な方法で形成
した。８は無電解メッキによる厚さ２．０μｍの第２電
極としての半田電極である。In FIG. 2, numeral 7 represents a BaTiO3-based ceramistor element and a PCM-based piezoelectric element. Reference numeral 5 denotes a nickel electrode as a first electrode, which was formed in the same manner as in Example I. 8 is a solder electrode as a second electrode with a thickness of 2.0 μm formed by electroless plating.
（実施例３）
第３図は本発明の第３の実施例により形成したセラミッ
ク電子部品を示すものである。(Example 3) FIG. 3 shows a ceramic electronic component formed according to a third example of the present invention.
第３図において、９はアルミナ基板、ＺｎＯ系のバリス
タ素子およびＢａＴｉＯ３系のセラミスタ素子である。In FIG. 3, reference numeral 9 denotes an alumina substrate, a ZnO-based varistor element, and a BaTiO3-based ceramistor element.
５は第１電極としてのニッケル電極で、実施例１と同様
な方法で形成した。６は第２電極としての銅電極で、実
施例１と同様な方法で形成した。８は無電解メッキによ
る厚さ２．０μｍの第３電極としての半田電極および半
田ディップにより形成した厚さ１０μｍの半田電極であ
る。Reference numeral 5 denotes a nickel electrode as a first electrode, which was formed in the same manner as in Example 1. Reference numeral 6 denotes a copper electrode as a second electrode, which was formed in the same manner as in Example 1. 8 is a solder electrode as a third electrode having a thickness of 2.0 μm formed by electroless plating and a solder electrode having a thickness of 10 μm formed by solder dipping.
このように形成したそれぞれの試料に、０．６φの軟鋼
線を共晶半田で接続しく図面では省略）、その剥離強度
（リード線を素体の表面に対して９０゜垂直に引張った
とき、リード線がはずれる強さ）を測定した結果を第１
表に示す。A 0.6φ mild steel wire was connected to each sample formed in this way using eutectic solder (not shown in the drawing), and its peel strength (when the lead wire was pulled perpendicularly to the surface of the element by 90°, The first result is the strength of the lead wire coming off.
Shown in the table.
（以 下 余 白）
く第
■
表〉
第１表に示したように本発明の試料は従来のものく第１
表における熱処理温度０℃のもの）に比べて、その剥離
強度は向上した。(Left below) Table 1 As shown in Table 1, the samples of the present invention are the same as the conventional ones.
The peel strength was improved compared to the one shown in the table at a heat treatment temperature of 0°C.
この場合のニッケル電極の熱処理温度は１０００Ｃから
３００℃が適当で、これ以上の温度になるとニッケル電
極が酸化して、ニッケル電極と第２電極七の接着性が低
下する。In this case, the appropriate heat treatment temperature for the nickel electrode is 1000C to 300C; if the temperature exceeds this temperature, the nickel electrode will be oxidized and the adhesion between the nickel electrode and the second electrode 7 will be reduced.
発明の効果
以上のように本発明によれば、セラミック素体の上に第
１電極であるニッケル電極を無電解メッキ法で設けた後
、熱処理してからこの上に第２電極および第３電極を形
成するというごく簡単な方法により、その接着性を著し
く高めるという効果が得られるもので、その工業的価値
は大なるものである。Effects of the Invention As described above, according to the present invention, a nickel electrode as a first electrode is provided on a ceramic body by electroless plating, and then a second electrode and a third electrode are placed on this after heat treatment. The simple method of forming the adhesive has the effect of significantly increasing its adhesion, and its industrial value is great.
第１図、第２図、第３図は本発明の実施例におけるセラ
ミック電子部品を示す断面図、第４図は従来例における
セラミック電子部品を示す断面図である。
４．７．９・・・・・・セラミック素体、５・・・・・
・ニッケル電極、６・・・・・・銅電極、８・・・・・
・半田電極。1, 2, and 3 are cross-sectional views showing a ceramic electronic component according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view showing a ceramic electronic component according to a conventional example. 4.7.9... Ceramic body, 5...
・Nickel electrode, 6... Copper electrode, 8...
・Solder electrode.
Claims (3)
１電極を無電解メッキ法で形成した後、１００℃〜３０
０℃の温度範囲で熱処理し、この上に第２電極として銅
を主成分とする電極を無電解メッキ法で形成することを
特徴とするセラミック電子部品の電極形成方法。(1) After forming a first electrode mainly composed of nickel on a ceramic electronic component by electroless plating,
1. A method for forming an electrode for a ceramic electronic component, the method comprising heat-treating in a temperature range of 0° C., and forming an electrode containing copper as a main component thereon by electroless plating as a second electrode.
て半田を主成分とする電極を無電解メッキ法で形成する
ことを特徴とする請求項１記載のセラミック電子部品の
電極形成方法。(2) The method for forming an electrode for a ceramic electronic component according to claim 1, characterized in that an electrode whose main component is solder is formed as the second electrode on the heat-treated nickel electrode by electroless plating.
を無電解メッキもしくはディップ法で形成することを特
徴とする請求項１記載の電子部品の電極形成方法。(3) The method for forming an electrode for an electronic component according to claim 1, characterized in that solder is formed as the third electrode on the copper electrode as the second electrode by electroless plating or a dipping method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298233A JPH03159102A (en) | 1989-11-16 | 1989-11-16 | Formation of electrode of ceramic electronic part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298233A JPH03159102A (en) | 1989-11-16 | 1989-11-16 | Formation of electrode of ceramic electronic part |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03159102A true JPH03159102A (en) | 1991-07-09 |
Family
ID=17856960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1298233A Pending JPH03159102A (en) | 1989-11-16 | 1989-11-16 | Formation of electrode of ceramic electronic part |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03159102A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000323345A (en) * | 1999-05-11 | 2000-11-24 | Tdk Corp | High-frequency electronic parts and its manufacture |
-
1989
- 1989-11-16 JP JP1298233A patent/JPH03159102A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000323345A (en) * | 1999-05-11 | 2000-11-24 | Tdk Corp | High-frequency electronic parts and its manufacture |
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