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JPH0294428A - X-ray mask structure - Google Patents

X-ray mask structure

Info

Publication number
JPH0294428A
JPH0294428A JP63243918A JP24391888A JPH0294428A JP H0294428 A JPH0294428 A JP H0294428A JP 63243918 A JP63243918 A JP 63243918A JP 24391888 A JP24391888 A JP 24391888A JP H0294428 A JPH0294428 A JP H0294428A
Authority
JP
Japan
Prior art keywords
holding frame
mask
reinforcing body
ray
mask structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63243918A
Other languages
Japanese (ja)
Inventor
Keiko Chiba
啓子 千葉
Yoshiaki Fukuda
福田 恵明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63243918A priority Critical patent/JPH0294428A/en
Priority to EP89118070A priority patent/EP0361516B1/en
Priority to DE68926373T priority patent/DE68926373T2/en
Publication of JPH0294428A publication Critical patent/JPH0294428A/en
Priority to US08/479,358 priority patent/US5656398A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To eliminate the change of flatness and parallelism caused by the spreading irregularity of adhesive agent, and obtain an X-ray mask structure excellent in parallelism by bonding a mask holding frame and a reinforcement member, at the part except the boundary surface between the lower surface of the mask retaining frame and the upper surface of the reinforcement member. CONSTITUTION:A desired pattern is formed on an X-ray absorber MP; this absorber MP is retained by a retaining film MM, which is retained by a mask holding frame MF; a reinforcement member MH is arranged on the holding frame MF; thereby constituting an X-ray mask structure. The mask holding frame MF and the reinforcement member MH are bonded at the part except the boundary surface between the lower surface of the mask holding frame MF (the lower surface of resist MG) and the upper surface of the reinforcement member MF, by using adhesive agent MC. A step-difference is formed at a bonding part of the reinforcement member MH to the mask holding frame MF, and the shape of the step-difference is made similar to the outer periphery shape of the mask holding frame MF, thereby eliminating the change of flatness and parallelism caused by spreading irregularity of adhesive agent.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はリソグラフィー用マスク構造体に関し、更に詳
しくは゛f’行度の優れたX線マスク構造体を提供する
DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a mask structure for lithography, and more specifically, provides an X-ray mask structure with excellent f' lineage.

(従来の技術) 従来、IC,LSI等の電子デバイスのりソクラフィー
力法として種々の方法が使用されているか、その中でも
X線リソグラフィ一方法はX線固仔の高透過率(低吸収
性)や短波長等の性質に基つき、これ迄の可視光や紫外
光によるリソグラフィ一方法に比へて多くの優れた点を
41−シており、サブミクロンリソグラフィ一方法のイ
1−力な手段として71:目されている。
(Prior Art) Conventionally, various methods have been used as a lithographic force method for electronic devices such as ICs and LSIs, and among them, one method, X-ray lithography, is a method that uses high transmittance (low absorption) and Based on its properties such as short wavelength, it has many advantages over conventional lithography methods using visible light and ultraviolet light, and has become a powerful means of submicron lithography. 71: Being noticed.

これらのX線リソグラフィ一方法において使用するマス
ク構造体は、金等のX線吸収休によるパターンを支持す
る支持I漠(X線透過1漠)をマスク保持枠に接着固定
したものである。
The mask structure used in one of these X-ray lithography methods is one in which a supporting material (an X-ray transparent material) supporting an X-ray absorbing pattern made of gold or the like is adhesively fixed to a mask holding frame.

ト記の支持++aはバックエツチングされたシリコーン
ウェハー(マスク保持枠)に支持されているか、ト記マ
スク構造体の使用に際し、X線露光装置内でのマスク構
造体の搬送、収納等の取扱いにおいて、シリコーンウェ
ハーのみでは厚さ及び強度共に不足であるため、通常は
補強体を設けて補強している。これらの補強体としては
、主にパイレックスガラスや石英ガラス等の低膨張製ガ
ラスかf更用されている。
Is the support ++a mentioned in (g) supported by a back-etched silicone wafer (mask holding frame), or when handling the mask structure in X-ray exposure equipment such as transportation and storage when using the mask structure described in (g)? Since silicone wafers alone are insufficient in both thickness and strength, reinforcement is usually provided for reinforcement. As these reinforcing bodies, low expansion glass such as Pyrex glass or quartz glass is mainly used.

(発明が解決しようとしている問題点)保持枠に補強体
を結合させる方法としては、第9図示の如く、保持枠M
Fの下面と補強体MHの1面との界面において接着剤M
Cによってムさねている。
(Problem to be Solved by the Invention) As a method of joining the reinforcing body to the holding frame, as shown in FIG.
Adhesive M is applied at the interface between the lower surface of F and one surface of reinforcing body MH.
C is bothering me.

リソグラフィーはX線に限らず、近接露光方式か採用さ
れており、露光に際しては液加り材、例えば、シリコー
ンウェハー(表面にはレジストが塗布さねている)とマ
スク構造体のマスク保持1漠との間隔(プリントギャッ
プ)を正確に設定する、必要かあり、通常は10乃至5
0μmのプリントギャップに設定することか要求されて
いる。
Lithography is not limited to X-rays, but also uses a proximity exposure method, and during exposure, a liquid additive, such as a silicone wafer (the surface of which is coated with resist) and a mask structure that holds the mask, is used. It is necessary to set the print gap accurately, usually between 10 and 5
It is required to set the print gap to 0 μm.

このプリントギャップを決定する重要な要因は、第9図
を参照するとマスク構造体の吸収体MPか形成されてい
る支持lI!2MMの平面度と、支持11fi M M
と露光装置にチャッキングされる面である補強体MHの
裏面との平行度である。X線マスクの平1ω度は吸収体
支持膜MMを作成後のマスク保持枠MFのt回度と、保
持枠MFと補強体MHとの間の接着剤MCの厚さむらに
よる収縮率の違いから生じる保持枠MFの変形に依存す
る。X線マスクの平行度は吸収体、支持膜作成後のマス
ク保持枠MFの支持gMMが密着している而とその裏側
の面との平行度と、保持枠MPと補強体MHとの間の接
着剤MCの厚さむら及び補強体MHの保持枠MFか密着
している面とその裏側の而との平行度によって決定され
る。従って上記のマスク構造体は可能な限り平面度及び
平行度か俺れる様に構成され、吸収体、支持膜、保持枠
及び補強体は精密加工によってかなり精度良く形成可能
であるが、保持枠と補強体との接着に接着剤を使用する
結果、保持枠と補強体との界面に存在する接着剤のJ′
Jみを正確に規定することは困難であることから、マス
ク構造体の平面度を1μm以下にし、且つ平行度を10
μm以内に設定することが困難であり、そのため十分な
スループットか得られないという問題かあった。 従っ
て本発明の[1的は−F行度に優れたX線リソグラフィ
ー用マスク構造体を提供することである。
The important factor determining this printing gap is that, with reference to FIG. 9, the absorber MP of the mask structure is formed with support lI! 2MM flatness and support 11fi MM
and the back surface of the reinforcing body MH, which is the surface chucked by the exposure device. The 1ω degree of flatness of the X-ray mask is the difference in shrinkage rate due to the t degree of the mask holding frame MF after creating the absorber support membrane MM and the uneven thickness of the adhesive MC between the holding frame MF and the reinforcing body MH. It depends on the deformation of the holding frame MF resulting from. The parallelism of the X-ray mask is determined by the parallelism between the support gMM of the mask holding frame MF that is in close contact with the absorber and the back surface after the support film is formed, and the parallelism between the holding frame MP and the reinforcing body MH. It is determined by the thickness unevenness of the adhesive MC and the parallelism between the surface of the reinforcing body MH that is in close contact with the holding frame MF and the surface on the back side thereof. Therefore, the above mask structure is constructed so that the flatness and parallelism are varied as much as possible, and the absorber, support film, holding frame, and reinforcing body can be formed with high precision through precision processing, but the holding frame and As a result of using an adhesive to bond the reinforcing body, the amount of adhesive present at the interface between the holding frame and the reinforcing body J'
Since it is difficult to define the J-shape accurately, the flatness of the mask structure is set to 1 μm or less, and the parallelism is set to 10
It is difficult to set the distance within μm, and therefore there is a problem that sufficient throughput cannot be obtained. Therefore, the first object of the present invention is to provide a mask structure for X-ray lithography with excellent -F line quality.

(問題点を解決するための手段) 上記目的は以−ドの本発明により達成される。(Means for solving problems) The above objects are achieved by the following invention.

すなわち、本発明は、所望パターンのX線吸収休、該吸
収体を支持する支持11妃 これらを支持するマスク保
持枠及び該保持枠を補強する補強体からなるX線マスク
構造体において、前記マスク保持枠と補強体との接合か
、マスク保持枠の下面と捕り〕1体の上面との界面以外
の部分で接着されていることを特徴とするX線マスク構
造体である。
That is, the present invention provides an X-ray mask structure comprising a desired pattern of X-ray absorption holes, a support 11 for supporting the absorber, a mask holding frame for supporting these, and a reinforcing body for reinforcing the holding frame. This X-ray mask structure is characterized in that the holding frame and the reinforcing body are bonded to each other at a portion other than the interface between the lower surface of the mask holding frame and the upper surface of the mask holding frame.

(作   用) X線マスク構造体のマスク保持枠と補強体との接合を、
マスク保持枠の下面と補強体の上面との界面以外の部分
で行なうことによって、接着剤の塗布むらに基づく平面
度及び平行度の変化か無くなり、接着剤の使用量のいか
んに拘らず平行度に優れたX線マスク構造体か提供され
る。
(Function) Joins the mask holding frame and reinforcing body of the X-ray mask structure.
By performing this on a part other than the interface between the bottom surface of the mask holding frame and the top surface of the reinforcing body, changes in flatness and parallelism due to uneven application of adhesive are eliminated, and the parallelism is maintained regardless of the amount of adhesive used. An excellent X-ray mask structure is provided.

又、補強体と保持枠との熱1膨張が異なっても、接着剤
が保持枠と補強体との界面には存在しないことから、両
者の熱地・蚤の相違による歪み等の問題も解消される。
In addition, even if the thermal expansion of the reinforcing body and the holding frame is different, since the adhesive is not present at the interface between the holding frame and the reinforcing body, problems such as distortion due to the difference in heat field and fleas between the two are also resolved. be done.

(実hh例) 次に好ましい実り’6例を挙げて本発明を更に詳しく説
明する。
(Actual hh Example) Next, the present invention will be explained in more detail by giving 6 preferred examples of fruitfulness.

第1図は本発明のマスク構造体の一例を示す図であり、
第2図はその製作工程を説明する図である。
FIG. 1 is a diagram showing an example of the mask structure of the present invention,
FIG. 2 is a diagram explaining the manufacturing process.

図中のMPはX線吸収休、MMは吸収体を支持している
支持1漠、MFは支持膜を支持しているマスク保持枠、
MGはマスク保持枠をリング状に残してエツチングする
時に用いられた保護膜、MHは補強体、MCは接着剤を
示す。尚、MSはマスク構造体を機械的に把持する際に
、爪か入る側溝であり、把持方法によっては打っても無
くてもよい。又1MAはマスク構造体の回転方向を定め
る切り欠き部であり位置決め機構によって形状か決定さ
れる。
In the figure, MP is an X-ray absorption block, MM is a support supporting the absorber, MF is a mask holding frame supporting the support membrane,
MG indicates a protective film used when etching the mask holding frame while leaving it in a ring shape, MH indicates a reinforcing body, and MC indicates an adhesive. Note that MS is a side groove into which a claw is inserted when mechanically gripping the mask structure, and may or may not be punched depending on the gripping method. Further, 1MA is a notch portion that determines the direction of rotation of the mask structure, and its shape is determined by the positioning mechanism.

以上の如き本発明のX線マスク構造体の構成において使
用する支持11MMは、ベリリウム(Be)、チタン(
Ti)、硅素(Si)、硼素(ロ)等の単体又はそれら
の化合物等の無機物、ポリイミド、ポリアミド、ポリエ
ステル、パリレン等の有機物或いはこれらの複合膜の如
く、従来支持膜として使用されているものはいずれも本
発明で使用することが出来、これらの支持膜はxIul
透過量を可能な限り大きくするために、無機物フィルム
の場合には0.5乃至5μm、有機物の場合には1乃至
20μmの厚みであるのが好ましい。これらの支持1漠
の形成方法自体はいずれも従来公知の方法でよく、例え
ば、シリコンウェハー(保持枠)MF上に前記の如き支
持111MMを成1摸し、次いでその裏面にエツチング
保護膜MG(窒化ケイ素1摸等)を設け、30重量%苛
性カリ水溶液でエツチングすることにより、保持枠MF
に支持された支持膜MMが形成される。
The support 11MM used in the configuration of the X-ray mask structure of the present invention as described above is made of beryllium (Be), titanium (
Inorganic materials such as Ti), silicon (Si), boron (B), etc. or their compounds; organic materials such as polyimide, polyamide, polyester, parylene; or composite films of these materials, which are conventionally used as support films. Any of these can be used in the present invention, and these support membranes include
In order to maximize the amount of transmission, the thickness is preferably 0.5 to 5 μm for inorganic films and 1 to 20 μm for organic films. The method of forming these supports 111MM itself may be a conventionally known method. For example, the support 111MM as described above is formed on a silicon wafer (holding frame) MF, and then an etching protective film MG ( The holding frame MF is formed by etching it with a 30% by weight aqueous solution of caustic potassium.
A support membrane MM supported by is formed.

一ト記支持111MM上に形成するX線吸収休MPとし
ては、一般に密度の高い物質、例えば、金、白金、タン
グステン、タンタル、銅、ニッケル及びそれらを含む化
合物の薄1漠(例えば、0.5乃信lμ0m程度の厚み
)の如く、従来のX線マスク構造体に使用されているX
線吸収休はいずれも本発明において使用出来、特に限定
されない。
The X-ray absorbing MP formed on the support 111MM is generally made of a material with high density, such as gold, platinum, tungsten, tantalum, copper, nickel, or a thin film of a compound containing them (for example, X-ray mask structures used in conventional X-ray mask structures, such as
Any linear absorbance can be used in the present invention and is not particularly limited.

この様なX線吸収休MPは、例えば 上記支持1漠上に
メツキ電極層を設け、その上に単層又は多層のレジスト
をエレクトロンビーム描画によりパターニングし、例え
ば、金をメツキしてX線吸収休である金パターンを形成
する。又、支持II!2MM上にWやTa等を成膜し、
単層又は多層のレジストをエレクトロンビーム描画によ
り形成し、次いでWやTa層をプラズマエツチングして
X線吸収休MPを形成することが出来る。又、X線吸収
休MPはシリコンウェハーのバックエツチング而に形成
してもよい。
Such an X-ray absorbing MP is produced by, for example, providing a plating electrode layer on the support 1, patterning a single layer or multilayer resist on it by electron beam writing, and plating it with gold for example. Forms a gold pattern that is resting. Also, support II! Form a film of W, Ta, etc. on 2MM,
An X-ray absorbing MP can be formed by forming a single layer or multilayer resist by electron beam writing, and then plasma etching the W or Ta layer. Alternatively, the X-ray absorbing MP may be formed by back etching a silicon wafer.

本発明は以上の如く構成されたマスク構造体の保持枠M
Fに、補強体MHを、該保持枠MFのF而(レジストM
Gの下面)と補強体MHの上面との界面以外で接着剤M
Cにより接着することを特徴としている。
The present invention provides a holding frame M for a mask structure constructed as described above.
The reinforcing body MH is attached to F of the holding frame MF (resist M
Adhesive M
It is characterized by adhesion by C.

上記本発明に使用する補強体MHは、例えば、パイレッ
クスガラス、石英ガラスの様な低膨張ガラス、セラミッ
クス、鉄、ニッケル、コバルト或いはそれらの合金や化
合物等の如き磁性材が使用出来る。これらの補強体MH
はマスク構造体の保持枠と同様に円環状の形状が良い。
For the reinforcing body MH used in the present invention, for example, a magnetic material such as low expansion glass such as Pyrex glass or quartz glass, ceramics, iron, nickel, cobalt, or an alloy or compound thereof can be used. These reinforcements MH
It is preferable to have an annular shape similar to the holding frame of the mask structure.

上記補強体Ml−1を保持枠MFに固定するのに使用す
る接着剤MCとしては、粘度が高く硬化時に収縮の少な
い接着剤、例えば、エポキシ系、ゴム系、アクリル系、
ポリイミド系等の熱硬化型、光硬化型、溶剤型等の接着
剤の使用が好ましい。
The adhesive MC used to fix the reinforcing body Ml-1 to the holding frame MF is an adhesive with high viscosity and low shrinkage upon curing, such as an epoxy-based, rubber-based, acrylic-based adhesive,
It is preferable to use a thermosetting adhesive such as a polyimide adhesive, a photocuring adhesive, a solvent adhesive, or the like.

保持枠MHと補強体MHの接着は、例えば、第1図aの
様にマスク保持枠MFの外周端面と補強体MHの上面と
を接着してもよいし、第1図すの様にマスク保持枠MF
の内面端面と補強体MHの上面とを接着してもよいし、
第1図Cの様にマスク保持枠MFの下面と補強体MHの
内側周辺端面を接着しても構わない。
The holding frame MH and the reinforcing body MH may be bonded, for example, by bonding the outer peripheral end surface of the mask holding frame MF and the top surface of the reinforcing body MH as shown in FIG. Holding frame MF
The inner end surface of the reinforcing body MH may be bonded to the upper surface of the reinforcing body MH, or
As shown in FIG. 1C, the lower surface of the mask holding frame MF and the inner peripheral end surface of the reinforcing body MH may be bonded together.

マスク保持枠MFの平面度はマスク保持枠MFとし・て
用いたシリコーンウェハーの平面度か1μm以下てあり
、支持j漠MMの応力を引っ張り応力で2乃至5 x 
108dyne/ cは以下にすることによってマスク
保持枠の平面度を1μm以下にすることが出来る。本実
施例によればそのマスク保持枠MFの平面度を損なうこ
となく補強体MHを接着することか出来、補強体MHか
接着されたX線マスクの平面度を1μm以下とすること
が出来る。
The flatness of the mask holding frame MF is equal to or less than the flatness of the silicone wafer used as the mask holding frame MF, which is 1 μm or less, and the stress of the supporting frame MF is 2 to 5 x tensile stress.
By setting 108 dyne/c below, the flatness of the mask holding frame can be made 1 μm or less. According to this embodiment, the reinforcing body MH can be bonded without impairing the flatness of the mask holding frame MF, and the flatness of the X-ray mask to which the reinforcing body MH is bonded can be 1 μm or less.

マスク保持枠MFの゛ト容度は3μm、補強体MHの゛
Y行容度μmのものケ用いた場合には、接着剤のJ’J
さむらに依存することなく)容度を8μm以下のX線マ
スクを製造出来る。
When the mask holding frame MF has a capacity of 3 μm and the reinforcing body MH has a Y-line capacity of μm, the adhesive J'J
It is possible to manufacture an X-ray mask with a capacity of 8 μm or less (without depending on the size).

又、マスク構造体の熱膨張率は補強体MHには依存せず
、マスク保持枠MFのみに依存する。
Further, the coefficient of thermal expansion of the mask structure does not depend on the reinforcing body MH, but only on the mask holding frame MF.

第3図は本発明の第2の実施例の断面図である。補強体
MHは保持枠MFの外径よりも大きい凹状段差を有し、
この段差内にマスク保持枠MFを配置して、マスク保持
枠MFの外周端面と補強体MHの上面のみでなく、補強
体MHの段差の内壁面か接7iすることによって補強体
MHと支持枠FMとの接着を強化することか出来る。
FIG. 3 is a sectional view of a second embodiment of the invention. The reinforcing body MH has a concave step larger than the outer diameter of the holding frame MF,
By arranging the mask holding frame MF within this step, and not only the outer peripheral end surface of the mask holding frame MF and the upper surface of the reinforcing body MH, but also the inner wall surface of the step of the reinforcing body MH are in contact with each other, the reinforcing body MH and the supporting frame are brought into contact with each other. It is possible to strengthen the adhesion with FM.

第4図は本発明の第3の実施例の断面図である。補強体
MHが保持枠MFの外径とほぼ等しい段差を有し、この
段差内にマスク保持枠MFを挿入して、マスク保持枠M
Fの外周端面と補強体MHの凸部の上面とで支持幹と補
強体とを接着している。この様に接着することによって
支持幹の下面と補強体の上面との間に接着剤が流れ込む
のを防止して、マスク構造体の平行度が確保されている
FIG. 4 is a sectional view of a third embodiment of the invention. The reinforcing body MH has a step approximately equal to the outer diameter of the holding frame MF, and the mask holding frame MF is inserted into this step to remove the mask holding frame M.
The supporting shaft and the reinforcing body are bonded to each other by the outer peripheral end face of F and the upper surface of the convex portion of the reinforcing body MH. By adhering in this manner, the adhesive is prevented from flowing between the lower surface of the support shaft and the upper surface of the reinforcing body, and the parallelism of the mask structure is ensured.

又、第5図の様な補強体MHに露光装置にX線マスクを
チャッキングする際、回転方向の位置決めに用いる切り
欠けMAが設けてあり、マスク保持枠MFの外周と補強
体MHの段差の内壁面が垂直な2方向に切欠面MBを持
ち、切り欠けMAと切欠面MBが回転方向に精度よく加
工制御されているので、接着後のマスク構造体の回転方
向の制御を補強体MHの切り欠けMAで制御することが
出来る。
In addition, as shown in Fig. 5, a notch MA is provided on the reinforcing body MH for use in positioning in the rotational direction when chucking the X-ray mask to the exposure device, and the notch MA is provided on the reinforcing body MH as shown in FIG. The inner wall surface of the mask structure has notch surfaces MB in two perpendicular directions, and the notch MA and the notch surface MB are precisely processed and controlled in the rotational direction. It can be controlled by the notch MA.

第6図は第4の実施例の断面図である。第3の実施例と
同様に、補強体MHに、マスク保持枠MFの外径と同形
状の第1の段差MHIとこれより径の大な第2の段差M
H2を設け、マスク保持枠を第1の段差内に挿入して、
保持枠の側面と第2の段差の内側面との間で接着剤MC
によって接着し、保持枠と補強体との接着を一層強化し
ている。
FIG. 6 is a sectional view of the fourth embodiment. Similarly to the third embodiment, the reinforcing body MH is provided with a first step MHI having the same shape as the outer diameter of the mask holding frame MF and a second step MHI having a larger diameter.
H2 is provided, the mask holding frame is inserted into the first step,
Adhesive MC is applied between the side surface of the holding frame and the inner surface of the second step.
This further strengthens the adhesion between the holding frame and the reinforcing body.

第7図は第5の実施例の断面図である。第8図はその平
面図である。補強体MHが接着強化のための段差とは別
に3点位置決め用の凸部MH′を持っている。回転方向
の位置決めに用いる切り欠けMAとMH′は回転方向に
精度よく加工制御されているので、接着後のマスクの回
転方向の制御を補強体MHの切り欠けMAで制御するこ
とが出来る。
FIG. 7 is a sectional view of the fifth embodiment. FIG. 8 is a plan view thereof. The reinforcing body MH has a convex portion MH' for three-point positioning in addition to the step for strengthening adhesion. Since the notches MA and MH' used for positioning in the rotational direction are precisely controlled in the rotational direction, the rotational direction of the mask after adhesion can be controlled by the notch MA of the reinforcing body MH.

(発明の効果) 以上の如き本発明によれば、X線マスク構造体のマスク
保持枠と補強体との接合を、マスク保持枠の下面と補強
体の上面との界面以外の部分で行なうことによって、接
着剤の塗布むらに基づく平面度及び平行度の変化が無く
なり、接着剤の使用量のいかんに拘らず平面度及び平行
度に優れたX線マスク構造体が提供される。
(Effects of the Invention) According to the present invention as described above, the mask holding frame and the reinforcing body of the X-ray mask structure are joined at a portion other than the interface between the lower surface of the mask holding frame and the upper surface of the reinforcing body. This eliminates changes in flatness and parallelism due to uneven application of adhesive, and provides an X-ray mask structure with excellent flatness and parallelism regardless of the amount of adhesive used.

又、補強体と保持枠との熱膨張が異なっても、接着剤か
保持枠と補強体との界面には存在しないことから、両者
の熱膨張の相違による歪み等の問題も解消される。
Further, even if the reinforcing body and the holding frame have different thermal expansions, since no adhesive is present at the interface between the holding frame and the reinforcing body, problems such as distortion due to the difference in thermal expansion between the two can be solved.

尚、本発明において使用した「平面度」とは、平面部分
の幾何学的平面からの狂いの大きさを7位味し、又5 
「平行度」とは、平行であるへき平面部分と平面部分と
の組合せにおいて、それらのうちの一方を基準として、
この基準平面からの他方の平面部分の狂いの大きさを意
味する。
In addition, "flatness" used in the present invention refers to the degree of deviation of a flat part from a geometrical plane, and
"Parallelism" means, in a combination of parallel plane parts and flat parts, with one of them as a reference,
It means the amount of deviation of the other plane part from this reference plane.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明による第1の実施例の断面図
及び構成を示す図、第3図は本発明による第2の実施例
の断面図、第4図は本発明による第3の実施例の断面図
、第5図は本発明による第3の実施例の平面図、第6図
は本発明による第4の実施例の断面図、第7図は本発明
による第5の実施例の断面図、第8図は本発明による第
5の実施例の平面図、第9図は従来のX線マスクの断面
図である。 MPIX線吸収休   MM:保持I摸MF:支持枠 
    MGニレジストMH=補強体     MC・
接着剤 MS二側/M       MA:切り欠き部第 図 (b) (C) !甲5 図 第 図 B 第 図 須3 図 Δ(ち 図 第7図 Δ〒5 図 洒3 図
1 and 2 are cross-sectional views and configuration diagrams of a first embodiment according to the present invention, FIG. 3 is a cross-sectional view of a second embodiment according to the present invention, and FIG. 4 is a cross-sectional view of a third embodiment according to the present invention. 5 is a plan view of a third embodiment of the present invention, FIG. 6 is a sectional view of a fourth embodiment of the present invention, and FIG. 7 is a fifth embodiment of the present invention. FIG. 8 is a plan view of a fifth embodiment of the present invention, and FIG. 9 is a cross-sectional view of a conventional X-ray mask. MPIX-ray absorption rest MM: Holding I model MF: Support frame
MG Niresist MH = Reinforcement body MC・
Adhesive MS second side/M MA: Notch part diagram (b) (C)! Figure A 5 Figure B Figure 3 Figure Δ (Figure 7 Δ〒5 Figure 3 Figure

Claims (3)

【特許請求の範囲】[Claims] (1)所望パターンのX線吸収休、該吸収休を支持する
支持膜、これらを支持するマスク保持枠及び該保持枠を
補強する補強体からなるX線マスク構造体において、前
記マスク保持枠と補強体との接合が、マスク保持枠の下
面と補強体の上面との界面以外の部分で接着されている
ことを特徴とするX線マスク構造体。
(1) In an X-ray mask structure comprising a desired pattern of X-ray absorption holes, a support film that supports the absorption holes, a mask holding frame that supports these, and a reinforcing body that reinforces the holding frame, the mask holding frame and An X-ray mask structure characterized in that the reinforcing body is bonded to a portion other than the interface between the lower surface of the mask holding frame and the upper surface of the reinforcing body.
(2)補強体の保持枠接合部に段差が形成されている請
求項1に記載のX線マスク構造体。
(2) The X-ray mask structure according to claim 1, wherein a step is formed at the holding frame joint portion of the reinforcing body.
(3)補強体の段差の形状がマスク保持枠の外周形状と
相似形状である請求項1に記載のX線マスク構造体。
(3) The X-ray mask structure according to claim 1, wherein the shape of the step of the reinforcing body is similar to the outer peripheral shape of the mask holding frame.
JP63243918A 1988-09-30 1988-09-30 X-ray mask structure Pending JPH0294428A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63243918A JPH0294428A (en) 1988-09-30 1988-09-30 X-ray mask structure
EP89118070A EP0361516B1 (en) 1988-09-30 1989-09-29 Method of making X-ray mask structure
DE68926373T DE68926373T2 (en) 1988-09-30 1989-09-29 Method for producing an X-ray mask structure
US08/479,358 US5656398A (en) 1988-09-30 1995-06-07 Method of making X-ray mask structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63243918A JPH0294428A (en) 1988-09-30 1988-09-30 X-ray mask structure

Publications (1)

Publication Number Publication Date
JPH0294428A true JPH0294428A (en) 1990-04-05

Family

ID=17110952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63243918A Pending JPH0294428A (en) 1988-09-30 1988-09-30 X-ray mask structure

Country Status (1)

Country Link
JP (1) JPH0294428A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413950U (en) * 1990-05-28 1992-02-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413950U (en) * 1990-05-28 1992-02-04

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