JPH0287030A - Platinum temperature sensor - Google Patents
Platinum temperature sensorInfo
- Publication number
- JPH0287030A JPH0287030A JP23946088A JP23946088A JPH0287030A JP H0287030 A JPH0287030 A JP H0287030A JP 23946088 A JP23946088 A JP 23946088A JP 23946088 A JP23946088 A JP 23946088A JP H0287030 A JPH0287030 A JP H0287030A
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- conductive film
- lead wire
- terminal electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910052697 platinum Inorganic materials 0.000 title claims description 32
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910001260 Pt alloy Inorganic materials 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 abstract description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 abstract description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 239000010409 thin film Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は絶縁基板の上に測温抵抗膜としての白金抵抗
膜が形成されている白金温度センサに関し、特に、白金
抵抗膜の端子電極に電気接続されるリード線の接続強度
の大きい白金温度センサに関する。Detailed Description of the Invention (Field of Industrial Application) This invention relates to a platinum temperature sensor in which a platinum resistance film as a temperature measuring resistance film is formed on an insulating substrate, and in particular, to a terminal electrode of the platinum resistance film. The present invention relates to a platinum temperature sensor with a high connection strength of electrically connected lead wires.
（従来の技術）
白金温度センサの代表的な構造例としては第２図および
第３図に示すようなものがある。(Prior Art) Typical structural examples of platinum temperature sensors are shown in FIGS. 2 and 3.
第２図は保護膜を形成していない状態の平面図、第８図
は第２図の１−１線に沿う側断面図であり、保護膜を形
成した状態で示している。FIG. 2 is a plan view with no protective film formed, and FIG. 8 is a side sectional view taken along line 1--1 in FIG. 2, showing the state with the protective film formed.
第２図、第３図に従って説明すれば、アルミナなどの絶
縁基板１の上に白金抵抗膜２が形成されている。この白
金抵抗ｐＡ２には、白金抵抗ペーストを印刷、焼き付け
た厚膜タイプのものや、あるいは真空蒸着、スパッタリ
ングなどの薄膜形成手段により形成した薄膜タイプのも
のがある。この白金抵抗膜２の両端部には端子電極３．
４が形成され、さらにこの端子電極３．４にはリード線
５．６が半田付けにより電気接続されている。７．８は
その半田付は部分を示す。また、白金抵抗膜２の表面に
はガラスあるいは樹脂による保護膜９が形成されており
、リード、１５．６が半田付けされている端子電極３．
４付近にはガラスあるいは樹脂による保護１１ｉ１０が
形成されている。Referring to FIGS. 2 and 3, a platinum resistance film 2 is formed on an insulating substrate 1 made of alumina or the like. This platinum resistor pA2 includes a thick film type made by printing and baking a platinum resistor paste, and a thin film type formed by thin film forming means such as vacuum evaporation and sputtering. Terminal electrodes 3 are provided at both ends of the platinum resistive film 2.
A lead wire 5.6 is electrically connected to the terminal electrode 3.4 by soldering. 7.8 indicates the soldering part. A protective film 9 made of glass or resin is formed on the surface of the platinum resistive film 2, and a terminal electrode 3. to which a lead 15.6 is soldered.
A protection 11i10 made of glass or resin is formed near 4.
（従来技術の問題点）
しかしながら、従来の白金温度センサについて、−５５
℃の低温に放置し、すぐさま＋１２５℃の高温に放置さ
せることを１サイクルとするヒートショックテストを繰
り返すと、端子電極８．４とリード線５．６の半田付は
部分７．８の界面にクラックが発生し、リード線５．６
が剥がれるという現象がみられ、実用に耐えるものでは
なかった。(Problems with the prior art) However, with respect to the conventional platinum temperature sensor, -55
When a heat shock test is repeated in which one cycle is to leave the terminal at a low temperature of +125°C and then immediately leave it at a high temperature of +125°C, the soldering of the terminal electrode 8.4 and the lead wire 5.6 is at the interface of the part 7.8. A crack occurred and the lead wire 5.6
The phenomenon of peeling was observed, and it was not suitable for practical use.
このようなリード線の剥がれの原因は、リード線を端子
電極に接続している半田の熱膨張係数が端子電極にくら
べて大きいため、ヒートショックテストによる半田の膨
張、収縮が起こる。このため半田付は部分においてクラ
ックが発生し、これがリード線の剥がれを引き起こして
いるものと考えられる。The reason for such peeling of the lead wire is that the coefficient of thermal expansion of the solder connecting the lead wire to the terminal electrode is larger than that of the terminal electrode, so that the solder expands and contracts during the heat shock test. For this reason, cracks occur in the soldered parts, which is thought to cause the lead wire to peel off.
（問題点を解決するための手段）
このような問題点を解決するために、端子電極とリード
線の接続構造に検討を加えた結果、半田付けによるリー
ド線の接続構造を採らずに、リード線を溶接により端子
電極に接続することにより、上述した問題点を解決でき
ることを見出した。(Means for resolving the problem) In order to solve these problems, we investigated the connection structure between the terminal electrode and the lead wire, and found that the connection structure between the terminal electrode and the lead wire was not used, and the lead wire connection structure was not used. It has been found that the above-mentioned problems can be solved by connecting the wire to the terminal electrode by welding.
つまり、この発明は、絶縁基板の上に、白金抵抗膜、こ
の白金抵抗膜の端部に接続される端子電極が形成され、
前記端子電極にリード線が接続されている白金温度セン
サにおいて、前記端子電極とリード線の間に導電膜が介
在され、リード線が導電膜を介して端子電極に溶接され
ていることを特徴とする白金温度センサである。In other words, in the present invention, a platinum resistive film and a terminal electrode connected to the end of the platinum resistive film are formed on an insulating substrate.
A platinum temperature sensor in which a lead wire is connected to the terminal electrode, characterized in that a conductive film is interposed between the terminal electrode and the lead wire, and the lead wire is welded to the terminal electrode via the conductive film. This is a platinum temperature sensor.
この発明で用いられる導電膜の材質としては、金、金−
白金、銀、銀−パラジウム、銀−白金、ニッケル、銅な
どがある。また、この導電膜の形成態様としては、ペー
ストを焼き付けた厚膜タイプのものと、真空蒸着法、ス
パッタリング法などの薄膜形成手段により形成した薄膜
タイプのものがある。要は、リード線を溶接で接続する
とき、溶融状態となって端子電極にリード線が接続され
るような材質のものを選べばよい。The material of the conductive film used in this invention is gold, gold-
Examples include platinum, silver, silver-palladium, silver-platinum, nickel, and copper. The conductive film can be formed in two ways: a thick film type formed by baking a paste, and a thin film type formed by a thin film forming method such as a vacuum evaporation method or a sputtering method. In short, when connecting the lead wire by welding, it is sufficient to choose a material that becomes molten and connects the lead wire to the terminal electrode.
また、リード線としては、白金線、ニッケルー白金線に
ッケル線の表面を白金膜で被覆したもの）、金−白金合
金線などがある。Examples of lead wires include platinum wires, nickel-platinum wires whose surfaces are coated with a platinum film, and gold-platinum alloy wires.
なお、端子電極は白金抵抗膜の形成と同時に、同材質で
同じ形成方法で形成されるのが通常であるが、白金抵抗
膜゛の形成とは別に形成してもよい。Although the terminal electrodes are usually formed of the same material and by the same method at the same time as the formation of the platinum resistance film, they may be formed separately from the formation of the platinum resistance film.
（作用）
端子電極とリード線の間に導電膜を介在させ、リード線
を溶接により端子電極に接続すると、溶接による導電膜
の溶融に伴ってリード線と端子電極との接続が図られる
。(Function) When a conductive film is interposed between the terminal electrode and the lead wire and the lead wire is connected to the terminal electrode by welding, the lead wire and the terminal electrode are connected as the conductive film is melted by welding.
（効果）
この発明の白金温度センサによれば、ヒートショックテ
ストを実施しても従来のように半田付は部分の膨張、収
縮という現象がないため、端子電極からリード線が剥が
れることがなく、リード線の接続強度の強い白金温度セ
ンサを提供することができる。(Effects) According to the platinum temperature sensor of the present invention, even if a heat shock test is performed, there is no phenomenon of expansion or contraction of soldering parts unlike in the past, so the lead wire does not peel off from the terminal electrode. A platinum temperature sensor with strong lead wire connection strength can be provided.
（実施例）
以下、この発明の図面に示した実施例に従って説明する
。(Embodiments) Hereinafter, the present invention will be described according to embodiments shown in the drawings.
第１図はこの発明の一実施例を示す側断面図であり、こ
の第１図において、第２図および第３図で示した構成と
同じ個所については同一番号を付し、重複説明を省略す
る。FIG. 1 is a side sectional view showing one embodiment of the present invention. In FIG. 1, the same parts as those shown in FIGS. 2 and 3 are designated by the same numbers, and redundant explanations are omitted. do.
第１図において、１１は端子電極３．４の上に形成した
導電膜であり、上述したように厚膜タイプのものや薄膜
タイプのもので形成されている。In FIG. 1, reference numeral 11 denotes a conductive film formed on the terminal electrode 3.4, and as described above, it is formed of a thick film type or a thin film type.
この導電膜１１にはリード線５．６が当接され、このリ
ード線５．６は抵抗溶接により導電膜１１を介して端子
電極３．４に接続されている。抵抗溶接は破線で示した
ように抵抗溶接機の２本の端子ａ、ｂを距離を置いてリ
ード線５．６に当て、この端子ａ、ｂの間に電流を流す
ことにより行われる。このとき導電膜１１にも電流が流
れて導電膜１１が溶融し、端子電極８．４とリード線５
．６との相互を接合することになる。A lead wire 5.6 is brought into contact with this conductive film 11, and this lead wire 5.6 is connected to the terminal electrode 3.4 via the conductive film 11 by resistance welding. Resistance welding is performed by applying two terminals a and b of a resistance welding machine to the lead wire 5.6 at a distance and passing a current between the terminals a and b, as shown by broken lines. At this time, current also flows through the conductive film 11, melting the conductive film 11, and connecting the terminal electrode 8.4 and the lead wire 5.
．． 6 will be joined to each other.
導電膜１１の材質はすでに上述しているが、白金温度セ
ンサの使用温度、使用雰囲気などの使用条件を考慮すれ
ばよい。実験結果によれば、使用条件が自然雰囲気中で
、８００℃の温度下で使用する場合、導電膜を厚膜タイ
プの金で形成したところ、良好な結果が得られた。つま
り、上述したヒートショックテストを５００〜１０００
回行つたところ、リード線の剥がれは見られなかった。Although the material of the conductive film 11 has already been described above, the usage conditions such as the usage temperature and usage atmosphere of the platinum temperature sensor may be considered. According to the experimental results, good results were obtained when the conductive film was formed of thick-film type gold when used in a natural atmosphere at a temperature of 800°C. In other words, the heat shock test described above was performed at 500 to 1000
When I went around it, I couldn't find any peeling of the lead wire.
なお、白金温度センサが使用される周りの雰囲気が中性
あるいは還元雰囲気の場合には、ニッケル、銅を用いる
のが好ましい。Note that when the atmosphere around the platinum temperature sensor is neutral or reducing, it is preferable to use nickel or copper.
第１図はこの発明かかる白金温度センサの一実施例を示
す側断面図である。
第２図は従来の白金温度センサを示す平面図である。
第３図は第２図の１−１線に沿う側断面図である。
１は絶縁基板、２は白金抵抗膜、３．４は端子電極、５
．６はリード線、９．１０は保護膜、１１は導電膜。FIG. 1 is a side sectional view showing an embodiment of the platinum temperature sensor according to the present invention. FIG. 2 is a plan view showing a conventional platinum temperature sensor. 3 is a side sectional view taken along line 1-1 in FIG. 2. FIG. 1 is an insulating substrate, 2 is a platinum resistive film, 3.4 is a terminal electrode, 5
．． 6 is a lead wire, 9.10 is a protective film, and 11 is a conductive film.
Claims (1)
端部に接続される端子電極が形成され、前記端子電極に
リード線が接続されている白金温度センサにおいて、 前記端子電極とリード線の間に導電膜が介在され、リー
ド線が導電膜を介して端子電極に溶接されていることを
特徴とする白金温度センサ。(1) A platinum temperature sensor in which a platinum resistive film and a terminal electrode connected to an end of the platinum resistive film are formed on an insulating substrate, and a lead wire is connected to the terminal electrode. A platinum temperature sensor characterized in that a conductive film is interposed between lead wires, and the lead wires are welded to terminal electrodes via the conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23946088A JPH0287030A (en) | 1988-09-24 | 1988-09-24 | Platinum temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23946088A JPH0287030A (en) | 1988-09-24 | 1988-09-24 | Platinum temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0287030A true JPH0287030A (en) | 1990-03-27 |
Family
ID=17045092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23946088A Pending JPH0287030A (en) | 1988-09-24 | 1988-09-24 | Platinum temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287030A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06137960A (en) * | 1992-10-29 | 1994-05-20 | Kyocera Corp | Temperature sensor |
| WO2005076666A1 (en) * | 2004-02-04 | 2005-08-18 | The Doshisha | Heat porducing material in thin film form and method for manufacture thereof |
| JP2009088529A (en) * | 2007-09-28 | 2009-04-23 | Heraeus Sensor Technology Gmbh | Sheathed wire and film resistor |
| EP1255972B2 (en) † | 2000-04-28 | 2012-09-05 | Heinrich Zitzmann | Temperature sensor and a method for bonding a temperature sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143503A (en) * | 1982-02-19 | 1983-08-26 | 松下電器産業株式会社 | Thin film platinum temperature sensor |
| JPS60158568A (en) * | 1984-01-30 | 1985-08-19 | 株式会社フジクラ | Method of producing lead from conductive part of substrate |
-
1988
- 1988-09-24 JP JP23946088A patent/JPH0287030A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143503A (en) * | 1982-02-19 | 1983-08-26 | 松下電器産業株式会社 | Thin film platinum temperature sensor |
| JPS60158568A (en) * | 1984-01-30 | 1985-08-19 | 株式会社フジクラ | Method of producing lead from conductive part of substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06137960A (en) * | 1992-10-29 | 1994-05-20 | Kyocera Corp | Temperature sensor |
| EP1255972B2 (en) † | 2000-04-28 | 2012-09-05 | Heinrich Zitzmann | Temperature sensor and a method for bonding a temperature sensor |
| WO2005076666A1 (en) * | 2004-02-04 | 2005-08-18 | The Doshisha | Heat porducing material in thin film form and method for manufacture thereof |
| JP2009088529A (en) * | 2007-09-28 | 2009-04-23 | Heraeus Sensor Technology Gmbh | Sheathed wire and film resistor |
| US8138881B2 (en) | 2007-09-28 | 2012-03-20 | Heraeus Sensor Technology Gmbh | Coated wire and film resistor |
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