JPH0279516A - Direct conversion reception circuit and manufacture of piezoelectric thin film resonator used for such circuit and manufacture of piezoelectric thin film resonator filter used for such circuit - Google Patents
Direct conversion reception circuit and manufacture of piezoelectric thin film resonator used for such circuit and manufacture of piezoelectric thin film resonator filter used for such circuitInfo
- Publication number
- JPH0279516A JPH0279516A JP22981688A JP22981688A JPH0279516A JP H0279516 A JPH0279516 A JP H0279516A JP 22981688 A JP22981688 A JP 22981688A JP 22981688 A JP22981688 A JP 22981688A JP H0279516 A JPH0279516 A JP H0279516A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- circuit
- film resonator
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000010355 oscillation Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims description 21
- 230000003321 amplification Effects 0.000 claims description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Circuits Of Receivers In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、ダイレクトコンバージョン受信回路及びこの
回路に用いられている圧電性薄膜共振子と圧電性薄膜共
振子フィルタの製造方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a direct conversion receiving circuit, a piezoelectric thin film resonator used in this circuit, and a method for manufacturing a piezoelectric thin film resonator filter. Regarding.
（従来の技術）
近年、無線通信の分野において、微弱電波を用いたコー
ドレス電話、構内ページャ等の普及が急速に進んで来て
いる。そして、これに伴って１通信装置の小型化、薄型
化の要求が高まってきている。通信装置の小型化で問題
となっている部分としては、高周波回路の小型化が挙げ
られる。高周波フィルタ発振回路用共振子は、従来ＬＣ
弾性表面波デバイス等が用いられているので、大型化し
てしまい小型化、集積化の障害となっていた。(Prior Art) In recent years, in the field of wireless communications, cordless telephones, in-house pagers, and the like that use weak radio waves have rapidly become popular. Along with this, there is an increasing demand for smaller and thinner communication devices. One of the problems in miniaturizing communication devices is the miniaturization of high-frequency circuits. The resonator for the high frequency filter oscillation circuit is conventionally LC
Since surface acoustic wave devices and the like are used, they have become large, which has been an obstacle to miniaturization and integration.
最近、これらの素子に代わるものとして研究されている
ものに、圧電性薄膜共振子及び圧電性薄膜共振子フィル
タがある。この圧電性薄膜共振子は、複合圧電膜をＳｉ
又はＧａＡｓ基板上に形成し、この厚みにより共振周波
数を異ならせる方式である。Piezoelectric thin film resonators and piezoelectric thin film resonator filters have recently been studied as alternatives to these elements. This piezoelectric thin film resonator uses a composite piezoelectric film made of Si.
Alternatively, it is formed on a GaAs substrate and the resonance frequency is varied depending on the thickness.
この様に圧電性薄膜共振子は、厚み振動を利用している
ため、この共振周波数は、この共振子の圧電膜、誘電体
膜等の膓厚でほぼ決定してしまう。As described above, since the piezoelectric thin film resonator utilizes thickness vibration, the resonant frequency is almost determined by the thickness of the piezoelectric film, dielectric film, etc. of the resonator.
従来受信方式として主に用いられていた方式として、ス
ーパーヘテロダイン方式がある。この方式では、高周波
フィルタと局部発振回路の周波数が異なるため、圧電性
薄膜共振子を利用すると、圧電性薄膜共振子の厚さが異
なるものを別々に２個製造しなければならない。同一基
板上に異なる周波数の共振子を複数個ｆＲ造するために
は、それぞれの共振子の１漠厚が異ならせなければなら
ず、製造工程に手間がかかり、複雑になる。また、部品
の厚さが異なるので集積化し難く、小型化しにくし１゜
一方、別の受信方式としては、ダイレクトコンバージョ
ン方式がある。この方式では、高周波フィルタと局部発
振回路との周波数は、同一のものを用いている。There is a superheterodyne system as a system that has been mainly used as a conventional reception system. In this method, since the frequencies of the high frequency filter and the local oscillation circuit are different, if piezoelectric thin film resonators are used, two piezoelectric thin film resonators with different thicknesses must be manufactured separately. In order to fabricate a plurality of resonators with different frequencies on the same substrate, each resonator must have a slightly different thickness, which makes the manufacturing process time-consuming and complicated. In addition, since the thickness of the components is different, it is difficult to integrate and downsize the device.On the other hand, as another receiving method, there is a direct conversion method. In this method, the high frequency filter and the local oscillation circuit use the same frequency.
（発明が解決しようとする課題）
以上述べてきた様に、スーパーヘテロダイン方式の高周
波回路に、圧電性薄膜共振子及び圧電性薄膜共振子フィ
ルタを用いて回路の集積化をしようとした場合、フィル
タと共振子の周波数が異なるため、製造工程が複雑とな
る。また、フィルタの特性として、狭帯域のものが必要
となるため、圧電性薄膜共振子及びフィルタを適用する
のが困難であった。(Problems to be Solved by the Invention) As described above, when attempting to integrate a piezoelectric thin film resonator and a piezoelectric thin film resonator filter in a superheterodyne high frequency circuit, the filter Since the frequencies of the resonator and the resonator are different, the manufacturing process becomes complicated. Furthermore, since filter characteristics require a narrow band, it has been difficult to apply piezoelectric thin film resonators and filters.
本発明は、スーパーヘテロダイン方式と異なり。The present invention differs from the superheterodyne method.
ダイレクトコンバージョン方式において、高周波フィル
タと局部発振回路の周波数が同一のため。In the direct conversion method, the high frequency filter and local oscillation circuit have the same frequency.
基板の厚さで周波数が決定する圧電性薄膜を用いて圧電
性薄膜共振子及びフィルタの厚さを同一工程の製造がで
きる。この様な圧電性薄膜共振子及びフィルタを用いる
ことで、製造工程も簡便にでき、ダイレクトコンバージ
ョン受信回路の集積化を実現することを目的とするもの
である。By using a piezoelectric thin film whose frequency is determined by the thickness of the substrate, it is possible to manufacture a piezoelectric thin film resonator and a filter with different thicknesses in the same process. By using such a piezoelectric thin film resonator and filter, the manufacturing process can be simplified, and the purpose is to realize the integration of a direct conversion receiving circuit.
（課題を解決するための手段）
上記目的を達成するために本発明においては、ダイレク
トコンバージョン受信回路に使用されている局部発振回
路として圧電性薄膜共振子を用い、高周波フィルタとし
て圧電性薄膜共振子フィルタを用いて、圧電性薄膜共振
子と圧電性薄膜共振子フィルタと高周波増幅回路と周波
数混合回路を同一基板上に集積化することを特徴とする
ものである。(Means for Solving the Problems) In order to achieve the above object, in the present invention, a piezoelectric thin film resonator is used as a local oscillation circuit used in a direct conversion receiving circuit, and a piezoelectric thin film resonator is used as a high frequency filter. The present invention is characterized in that a piezoelectric thin film resonator, a piezoelectric thin film resonator filter, a high frequency amplification circuit, and a frequency mixing circuit are integrated on the same substrate using a filter.
また、圧電性薄膜基板の上下面の相対する位置に電極と
この電極に接続された導体線路を１組づつ形成させる工
程と、この工程で形成された圧電性薄膜基板を２枚の誘
電体薄膜基−板で上下からサンドイッチ状に挾みこむ工
程と、圧電性薄膜基板が、誘電体薄膜基板に接している
面に垂直な誘電体薄膜基板の面のうち１組の平行に相対
する２面の一面から他面にかけて誘電体薄膜基板の底面
にテーパ状の側面をもった溝部を形成させる工程とから
なることを特徴とするものである。There is also a step of forming one set of electrodes and a conductor line connected to the electrodes at opposing positions on the upper and lower surfaces of the piezoelectric thin film substrate, and a step of forming two sets of dielectric thin film on the piezoelectric thin film substrate formed in this step. A process in which the piezoelectric thin film substrate is sandwiched between the top and bottom of the substrate, and one set of two parallel opposing faces of the dielectric thin film substrate perpendicular to the surface in contact with the dielectric thin film substrate. This method is characterized by a step of forming a groove portion with tapered side surfaces on the bottom surface of the dielectric thin film substrate from one surface to the other surface.
更に、圧電性薄膜基板の上下面の相対する位置に導体線
路を２本づつ形成させる工程と、この工程で形成された
圧電性薄膜基板を２枚の誘電体薄膜基板で上下からサン
ドイッチ状に挟みこむ工程と、圧電性薄膜基板が、誘電
体薄膜基板に接している面に垂直な誘電体薄膜基板の面
のうち１組の平行に相対する２面の一面から他面にかけ
て誘電体薄膜基板の底面にテーバ状の側面をもった溝部
を形成させる工程とからなることを特徴とするものであ
る。Furthermore, there is a step of forming two conductor lines at opposing positions on the upper and lower surfaces of the piezoelectric thin film substrate, and sandwiching the piezoelectric thin film substrate formed in this step between two dielectric thin film substrates from above and below. The piezoelectric thin film substrate is placed in contact with the dielectric thin film substrate from one side to the other of two parallel opposing faces of the dielectric thin film substrate perpendicular to the surface in contact with the dielectric thin film substrate. This method is characterized by a step of forming a groove portion with tapered side surfaces on the bottom surface.
（作 用）
ダイレクトコンバージョン受信回路に必要な局部発信回
路及び高周波フィルタに圧電性薄膜共振子及び圧電性薄
膜共振子フィルタを用いることで、小型化が困難であっ
た高周波回路部を圧電性薄膜基板の形状を利用して薄く
構成させることができるので、集積化が可能となる。ダ
イレクトコンバージョン方式は１局部発振回路の周波数
と高周波フィルタの周波数が等しいので、２枚の誘電体
薄膜基板で電極や導体線路が上下面に形成された圧電性
薄膜基板をサンドイッチ状にはさみこんで、誘電体薄膜
基板に側面がテーパ状の溝部を形成させるという同様の
製造工程でもって、圧電性薄膜共振子及びフィルタを製
造することができる。従って、２つの素子を同様の工程
で製造できることから、手間がかからず容易に形成させ
ることができる。(Function) By using piezoelectric thin film resonators and piezoelectric thin film resonator filters for the local oscillation circuit and high frequency filter required for the direct conversion receiving circuit, the high frequency circuit section, which was difficult to miniaturize, can be replaced with a piezoelectric thin film substrate. Since it can be constructed thinly by utilizing the shape of , it is possible to integrate it. In the direct conversion method, the frequency of one local oscillation circuit and the frequency of the high-frequency filter are equal, so a piezoelectric thin film substrate with electrodes and conductor lines formed on the upper and lower surfaces is sandwiched between two dielectric thin film substrates. A piezoelectric thin film resonator and a filter can be manufactured using a similar manufacturing process in which grooves with tapered side surfaces are formed in a dielectric thin film substrate. Therefore, since the two elements can be manufactured in the same process, they can be easily formed without much effort.
（実 施 例） 以下、図面を参照して本発明の一実施例を説明する。(Example) Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は、本発明の一実施例を示した図である。FIG. 1 is a diagram showing an embodiment of the present invention.
同図に示した様に、ダイレクトコンバージョン受信回路
の高周波部として圧電性薄膜共振子及び圧電性薄膜共振
子フィルタと高周波増幅回路と周波数混合回路と制御回
路とが同一基板上に集積化されている。この場合局部発
振回路として圧電性薄膜共振子を用い、高周波フィルタ
として圧電性薄膜共振子フィルタを用いている。ダイレ
クトコンバージョン受信回路は、これら各部からなる高
周波部を備えている。この回路の動作について以下に説
明する。まず、゛信号入力端子２から高周波信号が入力
される。この信号入力端子２には、アンテナ等が接続さ
れるものである。このアンテナから受信された信号等が
信号入力端子２に入力される。この高周波信号は、圧電
性薄膜共振子フィルタ３に入力される。この圧電性薄膜
共振子フィルタ３の導体４，５で、高周波信号のうちあ
る周波数ｆｃ成分以外は遮断遣せて、高周波増幅回路６
に高周波信号ｆｃを入力させる。この高周波信号ｆｃは
、高周波増幅回路６で増幅され１周波数混合回路１３に
入力される。一方、基準信号入力端子７からは、基準信
号が入力される。この基準信号は、制御回路８に入力さ
れる。また、電極と導体線路からなる導体部１１．１２
を振動させて発振させ番圧電性薄膜共振子ｌＯ及び局部
発振用ＶＣＤ９とで発振器を構成している。この発振器
によって高周波信号ｆｃが発生される。この発生された
高周波信号ｆｃは１周波数混合回路１３に入力される。As shown in the figure, a piezoelectric thin film resonator, a piezoelectric thin film resonator filter, a high frequency amplifier circuit, a frequency mixing circuit, and a control circuit are integrated on the same substrate as the high frequency section of the direct conversion receiving circuit. . In this case, a piezoelectric thin film resonator is used as the local oscillation circuit, and a piezoelectric thin film resonator filter is used as the high frequency filter. The direct conversion receiving circuit includes a high frequency section made up of these sections. The operation of this circuit will be explained below. First, a high frequency signal is input from the signal input terminal 2. An antenna or the like is connected to this signal input terminal 2. Signals and the like received from this antenna are input to the signal input terminal 2. This high frequency signal is input to the piezoelectric thin film resonator filter 3. The conductors 4 and 5 of the piezoelectric thin film resonator filter 3 cut off components other than a certain frequency fc component of the high frequency signal, and transmit the high frequency amplification circuit 6.
A high frequency signal fc is input to the terminal. This high frequency signal fc is amplified by the high frequency amplifier circuit 6 and input to the one frequency mixing circuit 13. On the other hand, a reference signal is input from the reference signal input terminal 7. This reference signal is input to the control circuit 8. In addition, conductor parts 11 and 12 consisting of electrodes and conductor lines
The piezoelectric thin film resonator lO and the local oscillation VCD 9 constitute an oscillator. A high frequency signal fc is generated by this oscillator. This generated high frequency signal fc is input to the one frequency mixing circuit 13.
尚、制御回路８は、圧電性薄膜共振子１０と局部発振用
ＶＣＯ９とからなる発振器を安定に動作させる働きをし
ている。高周波増幅回路６から周波数混合回路１３に入
力された高周波信号ｆｃは、局部発振用ＶＣＯ９から周
波数混合回路１３に入力された高周波信号ｆｃと混合さ
れて、 この混合された信号がベースバンド出力端子１
４に出力される。The control circuit 8 functions to stably operate an oscillator consisting of a piezoelectric thin film resonator 10 and a local oscillation VCO 9. The high frequency signal fc input from the high frequency amplifier circuit 6 to the frequency mixing circuit 13 is mixed with the high frequency signal fc input from the local oscillation VCO 9 to the frequency mixing circuit 13, and this mixed signal is sent to the baseband output terminal 1.
4 is output.
この大−スパン”ド出力端子１４に出力された信号は、
この−子に接続きれる処理回路等で、信号処理される。The signal output to this large spanned output terminal 14 is
The signal is processed by a processing circuit or the like that can be connected to this child.
゛
以上説明した回路は、基板１の上に集積化されている゛
、 ゛
尚、圧電性薄膜共振子１０及び圧電性薄膜共振子フィ′
ルタ３の構成については、後述する。゛The circuit described above is integrated on the substrate 1. ゛The piezoelectric thin film resonator 10 and the piezoelectric thin film resonator fi'
The configuration of the router 3 will be described later.
この様な回路をブロックダイヤグラムに表わした′向が
、第２図である。同図に示した様に、アンテナ２０で受
信された高周波信号は、ＲＦ″フィ゛ルタ２１に入力さ
れる。ＲＦフィルタ２１では、高周波信号のうちある周
波数ｆｃを通過させ、それ以外の周波数は遮断させる。A block diagram of such a circuit is shown in FIG. As shown in the figure, the high frequency signal received by the antenna 20 is input to the RF filter 21.The RF filter 21 passes a certain frequency fc of the high frequency signal, and passes the other frequencies. make it cut off.
この周波数ｆｃの成分は。The component of this frequency fc is.
周波数混合回路２４に入力される。一方、局部発振回路
２３で発生□された周波数ｆｃも周波数混合回路２４に
入力される。周波数混合回路２４では、高周波増幅回路
２２からの出力周波数ｆｃを局部発振回路２３で発生さ
れた周波数ｆｃと混合させて所望の信号を出力端子２５
に出力される。The signal is input to the frequency mixing circuit 24. On the other hand, the frequency fc generated by the local oscillation circuit 23 is also input to the frequency mixing circuit 24. The frequency mixing circuit 24 mixes the output frequency fc from the high frequency amplifier circuit 22 with the frequency fc generated by the local oscillation circuit 23 and outputs a desired signal to the output terminal 25.
is output to.
以上説明したきた様に、ＲＦフィルタの周波数が、局部
発振回路の周波数が等しい。圧電性薄膜共振子及び圧電
性薄膜共振子フィルタは、この基板の厚さにより周波数
が変わる。従って、周波数を等しくするためには、圧電
性薄膜共振子及び圧電性薄膜共振子フィルタの厚さを同
一にすればよいので、厚さの異なる素子を２種類製造す
るよりは、厚さが同一なので同様の製造工程により製造
できる。As explained above, the frequency of the RF filter and the frequency of the local oscillation circuit are the same. The frequency of piezoelectric thin film resonators and piezoelectric thin film resonator filters changes depending on the thickness of the substrate. Therefore, in order to equalize the frequencies, it is sufficient to make the thickness of the piezoelectric thin film resonator and the piezoelectric thin film resonator filter the same, so it is better to manufacture two types of elements with the same thickness than to manufacture two types of elements with different thicknesses. Therefore, they can be manufactured using the same manufacturing process.
次に、この圧電性薄膜共振子及び圧電性薄膜共振子フィ
ルタの製造工程及び集積化方法の一例について第３図を
用いて説明する。まず集積回路を形成する基板３０とし
ては、例えばＳｉ、 ＧａＡｓ等の半導体基板を用いる
。この基板３０の上に高周波増幅回路や局部発振用ｖＣ
Ｏや周波数混合回路等を集積回路３２としてまとめて集
積化させる。この上に、集積回路３２等を保護するため
のパシベーション膜３１を形成させる。この時に、導体
４１．４２．４４を集積回路３２から伸ばしてエツチン
グ等により形成させておく。この様にすることで、共振
子及びフィルタを形成させる工程と半導体の製造工程と
は完全に分離でき１例えば０ＭＯ８、バイポーラ等のプ
ロセスの違いに対して共振子及びフィルタをほとんど無
関係に形成することができる。パシベーション膜３１の
上にＳｉｎ、 ＳｉＯ□、 ５ｊｉＮ＊等の第１の誘電
膜４５を少し厚めに形成させる。この第１の誘電１漠４
５の上に電極３８と導体３６ａ、 ３７ａ、 ３９ａを
形成し、これに導体３６ａ、 ３７ａを接続させる。ま
た、この電極３８に導体３９ａを接続させる。 この第
１の誘電膜４５の上にＴａｇ、 、 ＺｎＯ、＾ｇＮ等
の圧電膜４６を形成させる。 この圧電膜４６の上に電
極と導体３９ｂとを接続したものを形成させ、また、導
体３６ａ、 ３７ｂを形成させる。Next, an example of the manufacturing process and integration method of this piezoelectric thin film resonator and piezoelectric thin film resonator filter will be explained using FIG. 3. First, a semiconductor substrate such as Si or GaAs is used as the substrate 30 on which the integrated circuit is formed. On this board 30, there is a high frequency amplification circuit and a VC for local oscillation.
O, a frequency mixing circuit, etc. are integrated together as an integrated circuit 32. A passivation film 31 for protecting the integrated circuit 32 and the like is formed thereon. At this time, conductors 41, 42, and 44 are extended from the integrated circuit 32 and formed by etching or the like. By doing this, the process of forming resonators and filters can be completely separated from the semiconductor manufacturing process.1 For example, resonators and filters can be formed almost independently for different processes such as 0MO8, bipolar, etc. Can be done. A first dielectric film 45 made of Sin, SiO□, 5jiN*, etc. is formed on the passivation film 31 to be slightly thicker. This first dielectric 1
An electrode 38 and conductors 36a, 37a, 39a are formed on top of the electrode 5, and the conductors 36a, 37a are connected to the electrode 38 and conductors 36a, 37a, 39a. Further, a conductor 39a is connected to this electrode 38. On this first dielectric film 45, a piezoelectric film 46 of Tag, ZnO, ^gN, etc. is formed. A connection between an electrode and a conductor 39b is formed on this piezoelectric film 46, and conductors 36a and 37b are also formed.
また更に圧電膜４６の上に、Ｓｘ３ Ｎ４ ＊ ＳｉＯ
ｐ ５１０２等の第２の誘電膜４７を形成させる。そし
て、側面がテーバ状になった溝４３を第１の誘電膜４５
の底面に形成させる。尚、誘電膜の底面とは、誘電膜と
圧電膜とが接していない面のことをいう、この様にする
と、圧電性薄膜共振子及びフィルタ部４０が形成される
ことになる。また、接続穴３３．３４．３５を形成させ
る。Further, on the piezoelectric film 46, Sx3N4*SiO
A second dielectric film 47, such as p5102, is formed. Then, the groove 43 having the tapered side surface is formed into the first dielectric film 45.
Formed on the bottom of the Note that the bottom surface of the dielectric film refers to the surface where the dielectric film and the piezoelectric film are not in contact with each other. By doing so, the piezoelectric thin film resonator and filter section 40 are formed. Also, connection holes 33, 34, 35 are formed.
接続穴３３では、導体３９ａ、ｂと導体４４を接続させ
る。また、接続穴３４では、導体３７ａ、 ｂと導体４
１を接続させる。そして、接続穴３５では、導体３７ａ
、 ｂと導体４２を接続させる。In the connection hole 33, the conductors 39a, b and the conductor 44 are connected. Further, in the connection hole 34, the conductors 37a, b and the conductor 4
Connect 1. In the connection hole 35, the conductor 37a
, b and the conductor 42.
以上の構成により、局部発振回路の周波数と、高周波フ
ィルタの周波数を同一にすること即ち、圧電性薄膜共振
子及びフィルタの基板厚が同一にできることから、同様
の製造工程により一度で製造が完了し、容易に集積化で
きる。前述した第１の誘電体膜４５と第２の誘電体膜４
７は、単一の膜でなくともよく、２層または、それ以上
の複合膜であっても同様の効果を奏するものである。With the above configuration, the frequency of the local oscillation circuit and the frequency of the high-frequency filter can be made the same, that is, the substrate thickness of the piezoelectric thin film resonator and the filter can be made the same, so manufacturing can be completed in one go using the same manufacturing process. , can be easily integrated. The first dielectric film 45 and the second dielectric film 4 described above
7 does not need to be a single film; even if it is a composite film of two or more layers, the same effect can be achieved.
以上詳述してきたように、本発明によれば、ダイレクト
コンバージョン受信回路に使用されていルタを用いるこ
とで、圧電性薄膜の形状からこれらの素子を薄く形成で
きるので、高周波回路部の集積化が可能となる。また、
ダイレクトコンバージョン受信回路では、この回路の特
性上局部発振回路の周波数と、高周波フィルタの周波数
とは、同じ周波数を用いることになる。同じ周波数なら
、圧電性薄膜共振子及び圧電性薄膜共振子フィルタの基
板の厚さを同じにすればよい、従って、同機の製造工程
で圧電性薄膜共振子及び圧電性薄膜共振子フィルタを形
成させることができるようになる。As described in detail above, according to the present invention, by using the router used in the direct conversion receiving circuit, these elements can be formed thinly based on the shape of the piezoelectric thin film, so the integration of the high frequency circuit section is facilitated. It becomes possible. Also,
In the direct conversion receiving circuit, the frequency of the local oscillation circuit and the frequency of the high frequency filter are the same due to the characteristics of this circuit. If the frequencies are the same, the thickness of the substrates of the piezoelectric thin film resonator and the piezoelectric thin film resonator filter can be made the same.Therefore, the piezoelectric thin film resonator and the piezoelectric thin film resonator filter can be formed in the manufacturing process of the same machine. You will be able to do this.
第１図は９本発明の一実施例を示した図、第２図は、本
発明のダイレクトコンバージョン受信回路における高周
波部のブロック図、第３図は、本発明の他の実施例を示
した図である。
１．３０・・・基板
３・・・圧電性薄膜共振子フィルタ
６・・・高周波増幅回路
９・・・局部発振用ＶＣＯ
１０・・・圧電性ｗｔ膜共振子
１３、２４・・・周波数混合回路
代理人 弁理士 則 近 憲 佑
同 松山光之
第１図
第２図
第３図FIG. 1 is a diagram showing one embodiment of the present invention, FIG. 2 is a block diagram of the high frequency section in the direct conversion receiving circuit of the present invention, and FIG. 3 is a diagram showing another embodiment of the present invention. It is a diagram. 1.30...Substrate 3...Piezoelectric thin film resonator filter 6...High frequency amplifier circuit 9...VCO for local oscillation 10...Piezoelectric wt film resonator 13, 24...Frequency mixing Circuit agent Patent attorney Nori Chika Ken Yudo Mitsuyuki Matsuyama Figure 1 Figure 2 Figure 3
Claims (3)
と周波数混合回路とからなる高周波部を備えたダイレク
トコンバージヨン受信回路において、前記局部発信回路
として圧電性薄膜共振子を用い、かつ前記高周波フィル
タとして圧電性薄膜共振子フィルタを用い、前記圧電性
薄膜共振子及び前記圧電性薄膜共振子フィルタの薄膜厚
を同一にして、前記圧電性薄膜共振子と前記圧電性薄膜
共振子フィルタと前記高周波増幅回路と前記周波数混合
回路を同一基板上に集積化することを特徴とするダイレ
クトコンバージヨン受信回路。(1) In a direct conversion receiving circuit equipped with a high frequency section consisting of a local oscillation circuit, a high frequency filter, a high frequency amplification circuit, and a frequency mixing circuit, a piezoelectric thin film resonator is used as the local oscillation circuit, and as the high frequency filter. A piezoelectric thin film resonator filter is used, the piezoelectric thin film resonator and the piezoelectric thin film resonator filter have the same thin film thickness, and the piezoelectric thin film resonator, the piezoelectric thin film resonator filter, and the high frequency amplification circuit are manufactured. and the frequency mixing circuit are integrated on the same substrate.
びこの電極に接続された導体線路を１組づつ形成させる
工程と、 この工程で形成された圧電性薄膜基板を２枚の誘電体薄
膜基板でもってサンドイッチ状に挟みこむ工程と、 前記圧電性薄膜基板が、前記誘電体薄膜基板に接してい
る面に垂直な前記誘電体薄膜基板の面のうち１組の平行
に相対する２面の一面から他面にかけて前記誘電体薄膜
基板の底面にテーパ状の側面をもった溝部を形成させる
行程、 とからなることを特徴とする圧電性薄膜共振子の製造方
法。(2) A step of forming one set of electrodes and a conductor line connected to the electrodes at opposing positions on the upper and lower surfaces of the piezoelectric thin film substrate; a step of sandwiching the piezoelectric thin film substrate with thin film substrates; and a pair of parallel opposing faces of the dielectric thin film substrate perpendicular to the surface in contact with the dielectric thin film substrate. A method for manufacturing a piezoelectric thin film resonator, comprising the steps of: forming a groove portion with tapered side surfaces on the bottom surface of the dielectric thin film substrate from one surface to the other surface.
路を２本づつ形成させる工程と、 この工程で形成された圧電性薄膜基板を２枚の誘電体薄
膜基板でもってサンドイッチ状に挟みこむ工程と、 前記圧電性薄膜基板が、前記誘電体薄膜基板に接してい
る面に垂直な前記誘電体薄膜基板の面のうち１組の平行
に相対する２面の一面から他面にかけて前記誘電体薄膜
基板の底面にテーパ状の側面をもった溝部を形成させる
工程、 とからなることを特徴とする圧電性薄膜共振子フィルタ
の製造方法。(3) A step of forming two conductor lines at opposing positions on the upper and lower surfaces of the piezoelectric thin film substrate, and sandwiching the piezoelectric thin film substrate formed in this step between two dielectric thin film substrates. the piezoelectric thin film substrate is exposed to the dielectric material from one side to the other of a pair of parallel opposed faces of the dielectric thin film substrate perpendicular to the surface in contact with the dielectric thin film substrate; 1. A method for manufacturing a piezoelectric thin film resonator filter, comprising the steps of: forming a groove portion with tapered side surfaces on the bottom surface of a thin film substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22981688A JPH0279516A (en) | 1988-09-16 | 1988-09-16 | Direct conversion reception circuit and manufacture of piezoelectric thin film resonator used for such circuit and manufacture of piezoelectric thin film resonator filter used for such circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22981688A JPH0279516A (en) | 1988-09-16 | 1988-09-16 | Direct conversion reception circuit and manufacture of piezoelectric thin film resonator used for such circuit and manufacture of piezoelectric thin film resonator filter used for such circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0279516A true JPH0279516A (en) | 1990-03-20 |
Family
ID=16898119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22981688A Pending JPH0279516A (en) | 1988-09-16 | 1988-09-16 | Direct conversion reception circuit and manufacture of piezoelectric thin film resonator used for such circuit and manufacture of piezoelectric thin film resonator filter used for such circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0279516A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5146182A (en) * | 1990-05-25 | 1992-09-08 | Sumitomo Electric Industries, Ltd. | Microwave device |
| US20140018126A1 (en) * | 2011-04-01 | 2014-01-16 | Renesas Electronics Corporation | Semiconductor device, manufacturing method of the same, and mobile phone |
-
1988
- 1988-09-16 JP JP22981688A patent/JPH0279516A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5146182A (en) * | 1990-05-25 | 1992-09-08 | Sumitomo Electric Industries, Ltd. | Microwave device |
| US20140018126A1 (en) * | 2011-04-01 | 2014-01-16 | Renesas Electronics Corporation | Semiconductor device, manufacturing method of the same, and mobile phone |
| US9299914B2 (en) * | 2011-04-01 | 2016-03-29 | Renesas Electronics Corporation | Semiconductor device, manufacturing method of the same, and mobile phone |
| US9906205B2 (en) | 2011-04-01 | 2018-02-27 | Renesas Electronics Corporation | Semiconductor device, manufacturing method of the same, and mobile phone |
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