JPH0254589A - Manufacturing method of surface emitting laser - Google Patents
Manufacturing method of surface emitting laserInfo
- Publication number
- JPH0254589A JPH0254589A JP20520688A JP20520688A JPH0254589A JP H0254589 A JPH0254589 A JP H0254589A JP 20520688 A JP20520688 A JP 20520688A JP 20520688 A JP20520688 A JP 20520688A JP H0254589 A JPH0254589 A JP H0254589A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial layer
- manufacturing
- emitting laser
- surface emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
Landscapes
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、エピタキシャル層の積層方向に共振方向・が
平行である共振器を有する面発光レーザの製造方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a surface emitting laser having a resonator whose resonance direction is parallel to the stacking direction of epitaxial layers.
基板に積層形成したエピタキシャル層の上下面に共振器
を形成して、その積層方向にレーザ光を出射する面発光
レーザが、デバイスの高集積化の要求に伴って開発され
ている。このような面発光レーザの製造工程にあっては
基板に多数の穴を掘る必要がある。2. Description of the Related Art Surface-emitting lasers, which have resonators formed on the upper and lower surfaces of epitaxial layers stacked on a substrate and emit laser light in the stacking direction, have been developed in response to demands for higher integration of devices. In the manufacturing process of such a surface emitting laser, it is necessary to drill a large number of holes in the substrate.
第２図は従来の面発光レーザの製造工程を示す模式図で
ある。まず厚さ３００μｍ程度のｎ−ＧａＡｓ基板２１
上に、基板側から順に１−ＧａＡｌＡｓクラッド層２２
ａ。FIG. 2 is a schematic diagram showing the manufacturing process of a conventional surface emitting laser. First, an n-GaAs substrate 21 with a thickness of about 300 μm
Above, a 1-GaAlAs cladding layer 22 is formed in order from the substrate side.
a.
活性層２２ ｂ ＋ ｐ −Ｇ ａ Ａ Ｉ Ａ ｓク
ラッド層２２ｃ及びキャップ層２２ｄから構成されるエ
ピタキシャル層２２を全膜厚１０μｍ程度に亘って積層
形成した後、エピタキシャル層２２（キャップ層２２ｄ
）上面に電極及び反射膜２３を形成する（第２図（ａｌ
）、次に、ｎ−ＧａＡｓ基板２１を膜厚１００μｍ程度
まで薄膜化し、その一部を除去してエピタキシャル層２
２下面を露出し、次いでこの露出面に反射膜２４を形成
すると共にｎ−ＧａＡｓ基板２１の下面に電極２５を形
成する（第２図（ｂ））。After forming an epitaxial layer 22 including an active layer 22 b + p -G a AI A s cladding layer 22 c and a cap layer 22 d to a total thickness of about 10 μm, the epitaxial layer 22 (cap layer 22 d
) Form an electrode and a reflective film 23 on the upper surface (see FIG. 2 (al.
), Next, the n-GaAs substrate 21 is thinned to a thickness of about 100 μm, and a part of it is removed to form an epitaxial layer 2.
The lower surface of n-GaAs substrate 21 is exposed, and then a reflective film 24 is formed on this exposed surface, and an electrode 25 is formed on the lower surface of n-GaAs substrate 21 (FIG. 2(b)).
この製造工程において、ｎ−ＧａＡｓ基板２１の薄膜化
の限界値は以後の製造工程を考慮すると、前述したよう
に１００μｍ程度である。従ってｎ−ＧａＡＳ基板２１
の一部が除去されて掘られる穴の寸法は第２図（ｂ）に
示す如くなって、露出されるエピタキシャル層２２の開
口面の径が１００μｍ以上となる。In this manufacturing process, the limit value for reducing the thickness of the n-GaAs substrate 21 is about 100 μm, as described above, considering the subsequent manufacturing process. Therefore, the n-GaAS substrate 21
The dimensions of the hole dug by removing a portion of the epitaxial layer 22 are as shown in FIG. 2(b), and the diameter of the exposed opening of the epitaxial layer 22 is 100 μm or more.
従来では以上のようにして製造されているので、エピタ
キシャル層の開口面が大きくなって、製造される面発光
レーザは共振器周辺が薄い構造となって、機械的強度が
小さく、熱抵抗、シリーズ抵抗が大きくなるという問題
点がある。Conventionally, manufacturing is performed as described above, so the aperture of the epitaxial layer is large, and the manufactured surface-emitting laser has a thin structure around the cavity, resulting in low mechanical strength, low thermal resistance, and low series. There is a problem that resistance increases.
また、薄膜化された後の基板の厚さは１００μｍ以上必
要であるので、エピタキシャル層の開口面が小さい多数
の穴を基板に均一に掘ることは実質上不可能であるとい
う問題点がある。Furthermore, since the thickness of the substrate after thinning is required to be 100 μm or more, there is a problem in that it is virtually impossible to uniformly dig a large number of holes in the substrate with small openings in the epitaxial layer.
本発明はかかる事情に鑑みてなされたものであり、電極
１反射膜を形成したエピタキシャル層の上面をヒートシ
ンクに融着した後、基板に加工処理を施すことにより、
基板の薄膜化を推進できるので、エピタキシャル層の開
口面が小さい多数の穴を基板に均一に掘ることができ、
しかも機械的強度を太き（、熱抵抗及びシリーズ抵抗を
小さくできる面発光レーザの製造方法を提供することを
目的とする。The present invention has been made in view of the above circumstances, and after fusing the upper surface of the epitaxial layer on which the electrode 1 reflective film is formed to a heat sink, the substrate is processed.
Since the substrate can be made thinner, many holes with small openings in the epitaxial layer can be uniformly dug in the substrate.
Moreover, it is an object of the present invention to provide a method for manufacturing a surface emitting laser that can increase mechanical strength (and reduce thermal resistance and series resistance).
本発明に係る面発光レーザの製造方法は、基板上に積層
形成したエピタキシャル層の上面の一部に電極２反射膜
を形成する第１の工程と、前記基板の一部を除去して前
記エピタキシャル層の下面を一部露出し、この露出面に
反射膜を形成し、また基板の下面に電極を形成する第２
の工程とを有する面発光レーザの製造方法において、前
記第１の工程終了後に前記エピタキシャル層の上面をヒ
ートシンクに融着ｅ体化し、次いで前記第２の工程を行
うことを特徴とする。The method for manufacturing a surface emitting laser according to the present invention includes a first step of forming an electrode 2 reflective film on a part of the upper surface of an epitaxial layer laminated on a substrate, and removing a part of the substrate to remove the epitaxial layer. A second layer in which a part of the lower surface of the layer is exposed, a reflective film is formed on this exposed surface, and an electrode is formed on the lower surface of the substrate.
In the method for manufacturing a surface emitting laser, the method for manufacturing a surface emitting laser includes the steps of: after the first step, the upper surface of the epitaxial layer is fused to a heat sink, and then the second step is performed.
本発明の面発光レーザの製造方法にあっては、電極９反
射膜を形成したエピタキシャル層の上面にヒートシンク
を融着した後、第２の工程（基板の一部除去、電極９反
射膜の形成）を行うこととする。そうすると基板を大幅
に薄膜化した場合にあっても第２の工程を行なえる。従
って基板を薄くできるので、エピタキシャル層の開口面
が小さい穴を掘ることが可能である。またエピタキシャ
ル層の開口面は小さいので、機械的強度は大きく、しか
も熱抵抗及びシリーズ抵抗は小さい。In the method for manufacturing a surface emitting laser of the present invention, after a heat sink is fused to the upper surface of the epitaxial layer on which the electrode 9 reflective film is formed, a second step (partial removal of the substrate, formation of the electrode 9 reflective film) is performed. ) will be carried out. This allows the second step to be performed even if the substrate is made significantly thinner. Therefore, since the substrate can be made thinner, it is possible to dig a hole with a small opening surface in the epitaxial layer. Furthermore, since the opening surface of the epitaxial layer is small, the mechanical strength is high, and the thermal resistance and series resistance are low.
以下、本発明をその実施例を示す図面に基づいて具体的
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は本発明に係る面発光レーザの製造方法の工程を
示す模式図である。まず厚さ３００μｍ程度のｎ−Ｇａ
Ａｓ基板１上に、基板側から順にｎ−ＧａＡｌＡｓクラ
ツド層２ａ＋活性層２ｂ、 ｐ−ＧａＡｌＡｓクラッド
層２Ｃ及びキャップ層２ｄから構成されるエピタキシャ
ル層２を膜厚１０μｍ程度に亘って積層形成した後、エ
ピタキシャル層２ （キャップ層２ｄ）上面に電極及び
反射膜３を形成し、電極及び反射膜３の表面を含んでエ
ピタキシャル層２ （キャップ層２ｄ）上面に’Ａｕ／
Ｉｎからなる融着材７を蒸着する（第１図（ａ））。FIG. 1 is a schematic diagram showing the steps of a method for manufacturing a surface emitting laser according to the present invention. First, an n-Ga film with a thickness of about 300 μm
After forming an epitaxial layer 2 having a thickness of about 10 μm on an As substrate 1, which is composed of an n-GaAlAs cladding layer 2a + an active layer 2b, a p-GaAlAs cladding layer 2C, and a cap layer 2d in order from the substrate side, An electrode and a reflective film 3 are formed on the upper surface of the epitaxial layer 2 (cap layer 2d), and 'Au/
A fusion material 7 made of In is deposited (FIG. 1(a)).
一方、Ｓｉからなる膜厚２５０１！ｍ程度のヒートシン
ク６の一面にも前記融着材７と同材質の融着材８を蒸着
し、エピタキシャル層２及びヒートシンク６を、両融着
材７，８を接触させる態様にて、融着一体化する。On the other hand, the thickness of the film made of Si is 2501! A welding material 8 made of the same material as the welding material 7 is also deposited on one surface of the heat sink 6 having a diameter of approximately Unify.
次いで、ラッピングまたはエツチングによりｎ−ＧａＡ
ｓ基板１を膜厚２０μｍ程度まで薄膜化し、その一部を
除去してエピタキシャル層２下面を露出する。最後にこ
の露出面に反射膜４を形成すると共にｎ−ＧａＡｓ基板
１の下面に電極５を形成する（第１図（ｂ））。Next, n-GaA is formed by wrapping or etching.
The s-substrate 1 is thinned to a thickness of about 20 μm, and a portion thereof is removed to expose the lower surface of the epitaxial layer 2. Finally, a reflective film 4 is formed on this exposed surface, and an electrode 5 is formed on the lower surface of the n-GaAs substrate 1 (FIG. 1(b)).
本発明ではｎ−ＧａＡｓ基板１の薄膜化は２０μｍ程度
まで可能であるので、ｎ−ＧａＡｓ基板１に掘られる穴
の径寸法は第１図（ｂｌに示す如くなり、エピタキシャ
ル層２の開口面の径は２０μｍ程度となる。以上のよう
にして本発明ではエピタキシャル層の開口面が小さい穴
を基板に多数形成することが可能である。In the present invention, it is possible to reduce the thickness of the n-GaAs substrate 1 to about 20 μm, so the diameter of the hole dug in the n-GaAs substrate 1 is as shown in FIG. The diameter is about 20 μm.As described above, in the present invention, it is possible to form a large number of holes in the epitaxial layer with small openings on the substrate.
本発明では従来例に比してエピタキシャル層の開口面が
大幅に小さくなるので、共振器部分の近傍まで基板が存
在することになり、機械的強度は大きく、熱抵抗及びシ
リーズ抵抗は小さくなる。In the present invention, the opening surface of the epitaxial layer is significantly smaller than that of the conventional example, so the substrate is present even close to the resonator portion, resulting in high mechanical strength and low thermal resistance and series resistance.
因に従来例では４０Ω以上であったシリーズ抵抗が、本
発明例では３０Ω程度となり、大幅に改善されている。Incidentally, the series resistance, which was 40Ω or more in the conventional example, is about 30Ω in the example of the present invention, which is a significant improvement.
以上詳述した如く本発明の製造方法では、基板の大幅な
薄膜化を図れるので、エピタキシャル層の開口面が小さ
い多数の穴を基板に均一に形成することができる。As detailed above, in the manufacturing method of the present invention, it is possible to significantly reduce the thickness of the substrate, and therefore, it is possible to uniformly form a large number of holes with small opening surfaces in the epitaxial layer on the substrate.
また機械的強度が向上するので、製造工程中における取
扱いが容易−となる。更に本発明方法にて製造された面
発光レーザは、熱抵抗及びシリーズ抵抗が低減されるの
で、素子特性が向上する等本発明は優れた効果を奏する
。Furthermore, since the mechanical strength is improved, handling during the manufacturing process becomes easier. Further, since the surface emitting laser manufactured by the method of the present invention has reduced thermal resistance and series resistance, the present invention has excellent effects such as improved device characteristics.
第１図は本発明に係る面発光レーザの製造方法の工程を
示す模式図、第２図は従来の面発光レーザの製造方法の
工程を示す模式図である。
１・・・ｎ−ＧａＡｓ基板 ２・・・エピタキシャル層
３・・・電極及び反射膜 ４・・・反射膜 ５・・・
電極 ６・・・ヒートシンクFIG. 1 is a schematic diagram showing the steps of a method for manufacturing a surface emitting laser according to the present invention, and FIG. 2 is a schematic diagram showing the steps of a conventional method for manufacturing a surface emitting laser. 1... N-GaAs substrate 2... Epitaxial layer 3... Electrode and reflective film 4... Reflective film 5...
Electrode 6...Heat sink
Claims (1)
部に電極、反射膜を形成する第１の工程と、前記基板の
一部を除去して前記エピタキシャル層の下面を一部露出
し、この露出面に反射膜を形成し、また基板の下面に電
極を形成する第２の工程とを有する面発光レーザの製造
方法において、 前記第１の工程終了後に前記エピタキシャル層の上面を
ヒートシンクに融着一体化し、次いで前記第２の工程を
行うことを特徴とする面発光レーザの製造方法。[Claims] 1. A first step of forming an electrode and a reflective film on a part of the upper surface of the epitaxial layer laminated on the substrate, and removing a part of the substrate to remove the lower surface of the epitaxial layer. A method for manufacturing a surface emitting laser which has a part exposed, a second step of forming a reflective film on the exposed surface, and forming an electrode on the lower surface of the substrate, wherein after the first step, the epitaxial layer is removed. A method of manufacturing a surface emitting laser, characterized in that the upper surface is fused and integrated with a heat sink, and then the second step is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20520688A JPH0254589A (en) | 1988-08-18 | 1988-08-18 | Manufacturing method of surface emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20520688A JPH0254589A (en) | 1988-08-18 | 1988-08-18 | Manufacturing method of surface emitting laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0254589A true JPH0254589A (en) | 1990-02-23 |
Family
ID=16503158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20520688A Pending JPH0254589A (en) | 1988-08-18 | 1988-08-18 | Manufacturing method of surface emitting laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0254589A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0560358A2 (en) * | 1992-03-11 | 1993-09-15 | Sumitomo Electric Industries, Limited | Semiconductor laser and process for fabricating the same |
| EP1341278A1 (en) * | 2002-03-01 | 2003-09-03 | Seiko Epson Corporation | Surface-emitting semiconductor light-emitting device and method of manufacturing the same, optical module, and light-transmission device |
| KR100407955B1 (en) * | 2001-05-29 | 2003-12-03 | 엘지전자 주식회사 | method for forming GaAs on fusion substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63196946A (en) * | 1987-02-10 | 1988-08-15 | Matsushita Electric Ind Co Ltd | Backward inference method |
-
1988
- 1988-08-18 JP JP20520688A patent/JPH0254589A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63196946A (en) * | 1987-02-10 | 1988-08-15 | Matsushita Electric Ind Co Ltd | Backward inference method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0560358A2 (en) * | 1992-03-11 | 1993-09-15 | Sumitomo Electric Industries, Limited | Semiconductor laser and process for fabricating the same |
| EP0560358A3 (en) * | 1992-03-11 | 1994-05-18 | Sumitomo Electric Industries | Semiconductor laser and process for fabricating the same |
| KR100407955B1 (en) * | 2001-05-29 | 2003-12-03 | 엘지전자 주식회사 | method for forming GaAs on fusion substrate |
| EP1341278A1 (en) * | 2002-03-01 | 2003-09-03 | Seiko Epson Corporation | Surface-emitting semiconductor light-emitting device and method of manufacturing the same, optical module, and light-transmission device |
| US7157743B2 (en) | 2002-03-01 | 2007-01-02 | Seiko Epson Corporation | Surface-emitting light-emitting device and method of manufacturing the same, optical module, and light-transmission device |
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