JPH0249457A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0249457A JPH0249457A JP63200810A JP20081088A JPH0249457A JP H0249457 A JPH0249457 A JP H0249457A JP 63200810 A JP63200810 A JP 63200810A JP 20081088 A JP20081088 A JP 20081088A JP H0249457 A JPH0249457 A JP H0249457A
- Authority
- JP
- Japan
- Prior art keywords
- radiating
- semiconductor device
- sealing resin
- mounts
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000017525 heat dissipation Effects 0.000 claims description 18
- 239000011347 resin Substances 0.000 abstract description 18
- 229920005989 resin Polymers 0.000 abstract description 18
- 238000007789 sealing Methods 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体チップを樹脂などのパッケージに封
止した半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a semiconductor chip is sealed in a package made of resin or the like.
第6図は従来の半導体装置を示す斜視図、第7図はその
断面図である。これらの図において、(1)は金属板の
アイランド、(2)はアイランド(1)に装着された半
導体チップ、(3)はアイランド(1)と同じ金属板か
ら作られた内部リード、(4)は半導体チップ(2)の
電極(図示せず)と内部リード(3)を接続する金属細
線、(5)はこれら(1)ないしく4)を封止するパッ
ケージとしての封止樹脂で、第7図において左右の内部
リード(3)を結ぶ線を中心として、はゾ上下対称の形
状であるが、半導体チップ(2)のある側の封止樹脂(
5A)の方が、ない側の封止樹脂(5B)よりもや\厚
くなっている。(6)は内部リード(3)と連続した外
部リードで、封止樹脂(5)の外に設けられている。FIG. 6 is a perspective view showing a conventional semiconductor device, and FIG. 7 is a sectional view thereof. In these figures, (1) is an island made of a metal plate, (2) is a semiconductor chip mounted on island (1), (3) is an internal lead made from the same metal plate as island (1), and (4) is a semiconductor chip mounted on island (1). ) is a thin metal wire that connects the electrode (not shown) of the semiconductor chip (2) and the internal lead (3), (5) is a sealing resin as a package that seals these (1) or 4), In Fig. 7, the shape is vertically symmetrical with respect to the line connecting the left and right internal leads (3), but the sealing resin (
5A) is slightly thicker than the sealing resin (5B) on the side without it. An external lead (6) is continuous with the internal lead (3) and is provided outside the sealing resin (5).
このような半導体装置において、半導体チップ(2)が
外部リード(6)を通して外部の回路に接続されて動作
すると発熱する。この熱は封止樹脂(5)の表面および
外部リード(6)から外部へ放散される。ところが、負
荷条件が厳しく発熱量が大きかったり、周囲に発熱量の
大きい他の装置や部品が配置されるなど使用環境が悪く
て放熱効率の低いような場合は、半導体装置の温度が高
くなってその特性を維持できないことがある。そのよう
な場合は、例えば放熱フィン付の半導体装置を用いるな
どの対策が必要であるが、放熱フィン付の半導体装置は
寸法が大きく、価格も高いので、できるだけ第6図のよ
うな放熱フィンなしのタイプのものを用いるようにし、
負荷条件や使用環境が熱的に厳しくてやむを得ない場合
だけ放熱フィン付のタイプのものを使うようにする。In such a semiconductor device, heat is generated when the semiconductor chip (2) is connected to an external circuit through the external leads (6) and operates. This heat is dissipated to the outside from the surface of the sealing resin (5) and the external leads (6). However, if the operating environment is poor and the heat dissipation efficiency is low, such as when the load conditions are severe and the amount of heat generated is large, or when other equipment or components that generate a large amount of heat are placed nearby, the temperature of the semiconductor device may rise. It may not be possible to maintain these characteristics. In such a case, it is necessary to take measures such as using a semiconductor device with heat dissipation fins, but since semiconductor devices with heat dissipation fins are large in size and expensive, it is possible to use a semiconductor device without heat dissipation fins as shown in Figure 6. Try to use the type of
Use a type with heat dissipation fins only when it is unavoidable due to thermally severe load conditions or operating environment.
従来の半導体装置は以上のように構成されているので、
なるべく放熱フィンなしのものを用い使用時の熱的条件
の厳しい場合に放熱フィン付のものを用いるというよう
に使い分けるために、2種類の半導体装置を準備してお
く必要があった。Conventional semiconductor devices are configured as described above, so
It was necessary to prepare two types of semiconductor devices in order to use them properly, such as one without heat radiation fins if possible, and one with radiation fins when the thermal conditions during use are severe.
この発明は上記のような問題点を解消するためになされ
たもので、1種類で、寸法が小さくて価格の安いものと
、放熱能力の大きいものとの両方に簡単に使い分けでき
る半導体装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and provides a single type of semiconductor device that can be easily used for both small-sized, low-priced devices and large-sized heat dissipation devices. The purpose is to
この発明に係る半導体装置は、パッケージに取付部を設
けて、この取付部に係合する弾性部を備えた放熱フィン
を装着可能としたものである。In the semiconductor device according to the present invention, a mounting portion is provided on the package, and a heat dissipation fin having an elastic portion that engages with the mounting portion can be attached.
この発明における半導体装置は、パッケージの取付部に
弾性部を係合させて放熱フィンを取付けることにより、
放熱能力を増加させることができる。In the semiconductor device according to the present invention, the elastic part is engaged with the mounting part of the package to attach the radiation fin.
Heat dissipation capacity can be increased.
以下、この発明の一実施例を図について説明する。第1
図はこの発明の一実施例による半導体装置を示す斜視図
、第2図はその断面図である。これらの図において(1
)ないしく4)および(6)は第6図、第7図の従来例
と同様であるので、その説明は省する。たゾし、半導体
チップ(2)は第2図においてアイランド(1)の下面
に装着されている。(5)は(1)ないしく4)を封止
するパッケージとしての封止樹脂で、半導体チップ(2
)のある側の封止樹脂(5A)の方が、ない側の封止樹
脂(5B)よりも、第2図においてと下方向の厚さが厚
く、また、左右方向の寸法は小さくなって段部(7)が
設けられている。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a perspective view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view thereof. In these figures (1
) to 4) and (6) are the same as those in the conventional example shown in FIGS. 6 and 7, so their explanation will be omitted. The semiconductor chip (2) is mounted on the lower surface of the island (1) in FIG. (5) is a sealing resin as a package for sealing (1) or 4), and is a semiconductor chip (2).
) The sealing resin (5A) on the side with no side is thicker in the downward direction than the sealing resin (5B) on the side without it in Fig. 2, and the horizontal dimension is smaller. A stepped portion (7) is provided.
次に動作について説明する。半導体装置の動作時に半導
体チップ(2)で発生する熱は、従来例と同・様に封止
樹脂(5)の表面および外部リード(6)から外部へ放
散される。熱的条件が厳しくてこれでは放熱が不十分な
場合は、第3図の断面図に示すように放熱フィン(8)
が装着される。放熱フィン(8)は放熱部(9)と弾性
部(10から成り、放熱部(9)は熱伝導性のよい材料
でできた表面積の大きいひだ(11)を備え、弾性部0
■は細長くてたわませることができ、その先端α乃はか
ぎ状になっている。一方、封止樹脂(5)の段部(7)
のある所が取付部となり、弾性部QQIをたわませてそ
の先端02)をこ\に係合させることにより、放熱フィ
ン(8)が装着される。弾性部(lllllの先端0乃
を段部(7)に係合させたとき、放熱部(9)の基部(
IQが封止樹脂(5B)に密着するようになっている。Next, the operation will be explained. Heat generated in the semiconductor chip (2) during operation of the semiconductor device is dissipated to the outside from the surface of the sealing resin (5) and the external leads (6), as in the conventional example. If heat dissipation is insufficient due to severe thermal conditions, use the heat dissipation fins (8) as shown in the cross-sectional view in Figure 3.
is installed. The heat radiation fin (8) consists of a heat radiation part (9) and an elastic part (10).
■ is long and thin and can be bent, and its tip α is hook-shaped. On the other hand, the stepped portion (7) of the sealing resin (5)
A certain place becomes a mounting part, and the heat dissipation fin (8) is mounted by bending the elastic part QQI and engaging its tip 02) there. When the tip 0~ of the elastic part (lllll) is engaged with the stepped part (7), the base (
The IQ is brought into close contact with the sealing resin (5B).
半導体チップ(2)で発生した熱は四方へ伝わるが、ア
イランド(1)は金属であるのでこれには伝わり易い。Heat generated in the semiconductor chip (2) is transmitted in all directions, but since the island (1) is made of metal, it is easily transmitted to the island (1).
アイランド(1)は半導体チップ(2)に比べて面積が
大きく、シかも、封止樹脂(5B)は(5A)に比べて
、ワイヤ(4)のない分だけ薄くでき、従って、第3図
において上方の方が下方よりも熱が伝わり易い。こちら
に伝わった熱は封止樹脂(5B)の表面から放熱フィン
(8)の放熱部(9)の基部03へ伝わり、更に、表面
積の大きいひだ00へと伝わって外部へ放散される。こ
のように放熱フィン(8)を装着することにより簡単に
放熱能力を増加させることができる。なお、上記実施例
では、封止樹脂(5)の外部リード(6)がある側の2
つの側面に段部(7)を設けたが、これを外部リード(
6)のない側の2つの側面に、第2図において奥行き方
向に設けて取付部としてもよい。また、第4図の側面図
および第5図の立面図に放熱フィン(8)の装着状態を
示すように、封圧樹脂(5A)の4つの角に切欠き0→
を設け、これにより形成される段部(7)を取付部とし
てもよい。Although the island (1) has a larger area than the semiconductor chip (2), the sealing resin (5B) can be made thinner than the island (5A) due to the absence of the wire (4). Heat is more easily transferred upward than below. The heat transmitted here is transmitted from the surface of the sealing resin (5B) to the base 03 of the heat dissipation part (9) of the heat dissipation fin (8), further transmitted to the folds 00 having a large surface area, and radiated to the outside. By attaching the heat dissipation fins (8) in this manner, the heat dissipation capacity can be easily increased. In addition, in the above embodiment, the 2nd side of the sealing resin (5) on the side where the external lead (6) is located
A step (7) is provided on one side of the external lead (7).
6) may be provided in the depth direction in FIG. 2 on the two side surfaces without 6) to serve as attachment portions. In addition, as shown in the side view of FIG. 4 and the elevation view of FIG.
, and the stepped portion (7) formed thereby may be used as the attachment portion.
以上のように、この発明によれば、パッケージに取付部
を設けて、これに弾性部を係合させることにより、放熱
フィンが装着可能になるように構成したので、使用時の
熱的条件に応じて、1種類の半導体装置で、放熱フィン
なしの、寸法が小さくて価格の安いものと、放熱フィン
を装着した、放熱能力の大きいものとの両方に簡単に使
い分けできる効果がある。As described above, according to the present invention, the package is provided with a mounting part and the elastic part is engaged with the mounting part so that the heat dissipation fin can be attached. Accordingly, one type of semiconductor device can be easily used for both small-sized and inexpensive devices without heat-radiating fins and devices with large heat-radiating capacity equipped with heat-radiating fins.
第1図はこの発明の一実施例による半導体装置を示す斜
視図、第2図はその断面図、第3図は第2図の半導体装
置への放熱フィンの装着状態を示す断面図、第4図はこ
の発明の他の実施例による半導体装置への放熱フィンの
装着状態を示す側面図、第5図はその立面図、第6図は
従来の半導体装置を示す斜視図、第7図はその断面図で
ある。
図において、(2)は半導体チップ、(5)は封止樹脂
、(7)は段部、(8)は放熱フィン、αeは弾性部で
ある。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a perspective view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view thereof, FIG. The figures are a side view showing a state in which heat dissipation fins are attached to a semiconductor device according to another embodiment of the present invention, FIG. 5 is an elevational view thereof, FIG. 6 is a perspective view showing a conventional semiconductor device, and FIG. FIG. In the figure, (2) is a semiconductor chip, (5) is a sealing resin, (7) is a stepped portion, (8) is a radiation fin, and αe is an elastic portion. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
このパッケージに取付部を設けて、この取付部に係合す
る弾性部を備えた放熱フィンを装着可能としたことを特
徴とする半導体装置。In semiconductor chips sealed in packages,
A semiconductor device characterized in that the package is provided with a mounting portion so that a heat dissipation fin having an elastic portion that engages with the mounting portion can be attached.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63200810A JPH0249457A (en) | 1988-08-10 | 1988-08-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63200810A JPH0249457A (en) | 1988-08-10 | 1988-08-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0249457A true JPH0249457A (en) | 1990-02-19 |
Family
ID=16430574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63200810A Pending JPH0249457A (en) | 1988-08-10 | 1988-08-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0249457A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168926A (en) * | 1991-09-25 | 1992-12-08 | Intel Corporation | Heat sink design integrating interface material |
US5239199A (en) * | 1991-01-14 | 1993-08-24 | Texas Instruments Incorporated | Vertical lead-on-chip package |
US5530295A (en) * | 1993-12-29 | 1996-06-25 | Intel Corporation | Drop-in heat sink |
US5552960A (en) * | 1994-04-14 | 1996-09-03 | Intel Corporation | Collapsible cooling apparatus for portable computer |
EP0777270A1 (en) * | 1995-11-30 | 1997-06-04 | STMicroelectronics S.r.l. | Heat dissipator for electronic devices |
US5637923A (en) * | 1991-10-17 | 1997-06-10 | Fujitsu Limited | Semiconductor device, carrier for carrying semiconductor device |
US5912802A (en) * | 1994-06-30 | 1999-06-15 | Intel Corporation | Ducted opposing bonded fin heat sink blower multi-microprocessor cooling system |
EP2390912A1 (en) * | 2010-05-25 | 2011-11-30 | Sunonwealth Electric Machine Industry Co., Ltd. | Cooling module assembly method |
CN105392341A (en) * | 2015-11-24 | 2016-03-09 | 重庆盛镁镁业有限公司 | Aluminium alloy buckle clamping type radiating fin |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6013750B2 (en) * | 1980-04-04 | 1985-04-09 | 日本碍子株式会社 | Catalyst for removing nitrogen oxides and its manufacturing method |
-
1988
- 1988-08-10 JP JP63200810A patent/JPH0249457A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6013750B2 (en) * | 1980-04-04 | 1985-04-09 | 日本碍子株式会社 | Catalyst for removing nitrogen oxides and its manufacturing method |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5239199A (en) * | 1991-01-14 | 1993-08-24 | Texas Instruments Incorporated | Vertical lead-on-chip package |
US5168926A (en) * | 1991-09-25 | 1992-12-08 | Intel Corporation | Heat sink design integrating interface material |
US5637923A (en) * | 1991-10-17 | 1997-06-10 | Fujitsu Limited | Semiconductor device, carrier for carrying semiconductor device |
US5666064A (en) * | 1991-10-17 | 1997-09-09 | Fujitsu Limited | Semiconductor device, carrier for carrying semiconductor device, and method of testing and producing semiconductor device |
US5736428A (en) * | 1991-10-17 | 1998-04-07 | Fujitsu Limited | Process for manufacturing a semiconductor device having a stepped encapsulated package |
US5750421A (en) * | 1991-10-17 | 1998-05-12 | Fujitsu Limited | Semiconductor device, carrier for carrying semiconductor device, and method of testing and producing semiconductor device |
US5530295A (en) * | 1993-12-29 | 1996-06-25 | Intel Corporation | Drop-in heat sink |
US5552960A (en) * | 1994-04-14 | 1996-09-03 | Intel Corporation | Collapsible cooling apparatus for portable computer |
US5912802A (en) * | 1994-06-30 | 1999-06-15 | Intel Corporation | Ducted opposing bonded fin heat sink blower multi-microprocessor cooling system |
EP0777270A1 (en) * | 1995-11-30 | 1997-06-04 | STMicroelectronics S.r.l. | Heat dissipator for electronic devices |
EP2390912A1 (en) * | 2010-05-25 | 2011-11-30 | Sunonwealth Electric Machine Industry Co., Ltd. | Cooling module assembly method |
CN105392341A (en) * | 2015-11-24 | 2016-03-09 | 重庆盛镁镁业有限公司 | Aluminium alloy buckle clamping type radiating fin |
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