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JPH0239463B2 - - Google Patents

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Publication number
JPH0239463B2
JPH0239463B2 JP19641282A JP19641282A JPH0239463B2 JP H0239463 B2 JPH0239463 B2 JP H0239463B2 JP 19641282 A JP19641282 A JP 19641282A JP 19641282 A JP19641282 A JP 19641282A JP H0239463 B2 JPH0239463 B2 JP H0239463B2
Authority
JP
Japan
Prior art keywords
dielectric constant
weight
enamel frit
high dielectric
tio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19641282A
Other languages
Japanese (ja)
Other versions
JPS5988340A (en
Inventor
Takashi Matsubara
Satoru Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19641282A priority Critical patent/JPS5988340A/en
Publication of JPS5988340A publication Critical patent/JPS5988340A/en
Publication of JPH0239463B2 publication Critical patent/JPH0239463B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は特に金属と高誘電率体との複合体の製
造に適するホウロウフリツトに関るものである。
更に詳しく述べれば本発明は主として鋼板、ステ
ンレス板等の金属板に被着し、焼成することによ
つて上記金属板に良好に密着する高誘電率体を形
成するホウロウフリツトに関するものである。 近年電子部品、放電電極部品等に用いる高誘電
率材料として、耐熱性、機械的強度、冷却性能の
向上を目的として高誘電率体と金属との複合体が
注目され開発されている。上記高誘電率体として
は従来、チタン酸塩セラミツクが主として用いら
れているが、上記チタン酸塩セラミツクと金属と
を複合するには合成樹脂接着剤によつて接着する
方法、Ag、Ag−Pd等の貴金属ペーストを上記チ
タン酸塩セラミツクに塗布し焼付後金属とハンダ
付けを行なう方法等がある。しかし前者は耐熱性
に乏しく、また層間接着強度も満足なものではな
いという欠点があり、後者は上記貴金属ペースト
が高価であり、また工程が多く繁雑であるという
欠点があつた。上記高誘電率体としては更に高誘
電率BaTiO3結晶を含有するガラスの研究も行な
われているが(例えばJournal of American
Ceramic Society、Vol.47、No.3、1964)、上記
ガラスは金属との親和性に乏しく金属と複合体に
するには実用上大きな問題を有している。即ち上
記ガラスは熱膨張特性、軟化溶融温度において鋼
板、ステンレス板等の金属板と調和しないため、
これら金属板に対する密着性がなく、上記複合体
の製造には実用上用いることが不可能であつた。 本発明は上記従来の欠点を改良して金属板に良
好な密着性を有する高誘電率体を形成するホウロ
ウフリツトを提供することを目的とする。そして
上記目的はBaOおよび/またはSrOからなる金属
酸化物と、TiO2とを合量で10〜60重量%含み、
かつ上記金属酸化物とTiO2とのモル比が0.5〜1.5
の範囲内であるガラスであり、加熱処理されるこ
とによつて高誘電率の結晶を析出する本発明のホ
ウロウフリツトによつて達成せられる。上記ホウ
ロウフリツトは更に望ましくは体熱膨張係数が
200〜330×10-7(/℃)であり、かつ軟化溶融温
度が500〜700℃であり、加熱処理前においては実
質的に高誘電率の結晶を含有しないものであり、
そのためには上記金属酸化物とTiO2の合量が25
〜55重量%、上記金属酸化物とTiO2とのモル比
が0.9〜1.4であるか、または上記金属酸化物と
TiO2以外のガラス成分がSiO215〜45重量%、
B2O310〜30重量%、Al2O310重量%以下、
Na2O、K2OおよびLi2Oからなる群から選ばれた
一種または二種以上の金属酸化物10重量%以下、
CaO、ZnO、MgOおよびSb2O3からなる群から選
ばれた一種または二種以上の金属酸化物4〜25重
量%、F10重量%以下よりなることが望ましい。 本発明を以下に詳細に説明する。 上記組成を有する本発明のホウロウフリツトを
製造する一例を以下に説明する。 BaOおよび/またはSrOからなる金属酸化物
(以下MOとする)とTiO2とを供与する例えば金
属酸化物、金属水酸化物、あるいは金属塩等の金
属化合物を上記モル比、即ちMO/TiO20.5〜
1.5、望ましくは0.9〜1.4を与えるように混合した
混合物かあるいはMOとTiO2との上記モル比の
仮焼物を用い、これに他のガラス原料である例え
ばSiO2、Al2O3等の強火性原料と例えばB2O3
アルカリ金属酸化物、アルカリ土類金属酸化物等
の弱火性原料とをMOとTiO2との合量が10〜60
重量%(以下単に%とする)、望ましくは25〜55
%になるように混合し、更に望ましくは他のガラ
ス原料がSiO215〜45%、B2O310〜30%、
Al2O310%以下、Na2O、K2OおよびLi2Oからな
る群から選ばれた一種または二種以上の金属酸化
物10%以下、CaO、ZnO、MgOおよびSb2O3から
なる群から選ばれた一種または二種以上の金属酸
化物4〜25%、F10%以下なるガラス組成を与え
るように混合し、ガラスを製造する通常の方法で
上記混合物を1200〜1300℃で50〜60分間加熱溶融
し、その後水または空気により冷却する。かくし
て本発明のホウロウフリツトが得られるが、この
場合MOとTiO2とから生成される高誘電率の結
晶がガラス中に多量に析出しないよう急速に冷却
することが望ましい。 上記したように本発明においてはMO+TiO2
=10〜60%、MO/TiO2=0.5〜1.5モル比である
ことを必須とするが、その理由はMO+TiO2
10%であるホウロウフリツトは加熱処理によつて
高誘電率結晶相の析出が少なく、したがつて高誘
電率体が形成されないし、一方MO+TiO2>60
%であるホウロウフリツトは溶融作業温度が1400
℃以上となつて実用的でなく、かかる高温では複
合される金属もまた耐えることが出来ないからで
ある。更に0.5<MO/TiO2<1.5の範囲外におい
ては高誘電率体が得られない。 体熱膨張係数が200〜330×10-7(/℃)でかつ
軟化溶融温度が500〜700℃である本発明のホウロ
ウフリツトは鋼版、ステンレス板等の一般の金属
板と調和して特に良好な密着性を有する高誘電率
体を形成する。ここに軟化溶融温度とは体熱膨張
係数測定の際の屈伏点を指す。上記好ましい体熱
膨張係数と軟化溶融温度を本発明のホウロウフリ
ツトに与えるにはMO、TiO2以外のガラス成分
の組成を上記のごとく調節するのである。MO、
TiO2以外のガラス成分の各構成要素の作用とそ
の限定理由について以下に説明する。 SiO2<15%においてはホウロウフリツト製造
において材料がガラス化し難く、またSiO2>45
%では金属に施して融着させる際に必要とされる
処理温度が高くなり過ぎる。 B2O3<10%においては上記処理温度が同様に
高くなり過ぎ、またB2O3>30%では得られる高
誘電率体の耐水性が低下し実用に適さなくなる。 Al2O3>10%においては上記処理温度が高くな
り過ぎる。 Na2O+K2O+Li2O>10%においては得られる
高誘電率体中において易動度の大きなアルカリ金
属イオン濃度が増加し絶縁破壊強度が低下する。 CaO+ZnO+MgO+Sb2O3<4%においては上
記処理温度が高くなり過ぎ、また体熱膨張係数が
小さくなつてしまう。またCaO+ZnO+MgO+
Sb2O3>25%では得られる上記高誘電率体の耐水
性が低下し実用に適さなくなる。 F>10%では加熱処理による溶融の際分相す
る。 上記構成要素の他に金属との密着性を向上する
ため更にCoO、NiO等の公知化合物を含有せしめ
てもよいことは勿論である。 本発明のホウロウフリツトを用いて高誘電率体
−金属複合体を製造する一例を以下に説明する。 前記の如くして得られたホウロウフリツトに電
解質、粘着剤を混合し常法により粉砕して水性ス
リツプを調製する。かくして得られた水性スリツ
プを所定の金属板にスプレー法、刷毛塗り法、流
し塗り法、浸漬法等通常の方法により通常100〜
200μ厚程度に塗布し常温もしくは若干の加熱に
よつて乾燥させる。その後、軟化溶融温度以上に
加熱処理して金属板表面に上記ホウロウフリツト
を融着させた後、適宜冷却すればMOとTiO2
ら生成される高誘電率結晶が析出し、かくして複
合体が得られるのである。金属板に本発明のホウ
ロウフリツトを被着せしめるには上記方法の他、
スキージオイルにホウロウフリツトを混練して製
造したインキを用いてスクリーン印刷する方法、
ホウロウフリツトを適当な媒体中に分散させて電
気泳動により被着せしめる方法、ホウロウフリツ
ト粉末を乾式スプレー、静電塗装、流動浸漬等に
よつて被着せしめる乾式法等が適用されてよい
し、また乾式法においては金属板を予めホウロウ
フリツトの軟化溶融温度以上に加熱しておけばホ
ウロウフリツトは被着と同時に融着されることに
なる。上記複合体において形成される高誘電率体
の誘電率を所定の値に調節することは冷却速度を
変化させたり、冷却過程において所定の温度に所
定時間維持したり、あるいは再熱処理によつて上
記高誘電率結晶の析出量を加減することによつて
容易に可能である。 本発明のホウロウフリツトが金属板に対して良
好な密着性を示す理由は明確ではないが、本発明
のホウロウフリツトは熱処理前では高誘電率結晶
を殆んど含まないか、含んでも僅かであるから金
属板に施して熱処理する際、高誘電率結晶を多量
含有するホウロウフリツトと比較して良好な濡れ
が発現するためと思われる。したがつて本発明の
ホウロウフリツトにおいては高誘電率結晶がMO
+TiO2の40%以下であることが望ましく、勿論
上記高誘電率結晶を全く含まないことが最も望ま
しい。本発明のホウロウフリツトにおいて高誘電
率結晶含量を上記のように制限することは金属と
の密着性に好結果をもたらすこと以外に高誘電率
体の誘電率を熱処理条件によつて前記したように
所望の値に調節することを更に容易にするという
利点がある。 以下に本発明を更に具体的に説明するための実
施例について述べる。 実施例 原料配合物をルツボに入れて1200〜1300℃で50
〜60分加熱溶融し、得られた溶融物を水中に投入
することによつて急冷して第1表に示す組成のホ
ウロウフリツトを得た。 かくして得られたホウロウフリツトを水と共に
ミル引きして常法によりスリツプを調製する。上
記スリツプをスプレー法により100〜200μ程度に
軟鋼板およびステンレス板(50×50×1.4mm)に
施釉する。常温で乾燥させその後950℃3分の熱
処理を行なつた。上記熱処理の後850℃まで冷却
し、この温度にて50分間維持した後放冷する。か
くして得られた高誘電率体の誘電率とホウロウフ
リツトの体熱膨張係数、軟化溶融温度の値を第2
表に示す。なお第1表、第2表において試料No.1
〜11は本発明の実施例であり、試料No.12〜13は比
較例である。 第2表によれば本発明の実施例No.1〜11は比較
例No.12〜13に比してはるかに高誘電率を有する。
The present invention particularly relates to an enamel frit suitable for manufacturing composites of metals and high dielectric constant materials.
More specifically, the present invention mainly relates to an enamel frit that is adhered to a metal plate such as a steel plate or a stainless steel plate and is fired to form a high dielectric constant material that adheres well to the metal plate. BACKGROUND ART In recent years, composites of high-permittivity materials and metals have been attracting attention and being developed as high-permittivity materials for use in electronic components, discharge electrode parts, etc., with the aim of improving heat resistance, mechanical strength, and cooling performance. Conventionally, titanate ceramics have been mainly used as the above-mentioned high dielectric constant material, but in order to composite the above-mentioned titanate ceramics and metals, bonding methods using synthetic resin adhesives, Ag, Ag-Pd, etc. There is a method in which a noble metal paste such as the above is applied to the titanate ceramic and soldered to the metal after baking. However, the former has the drawbacks of poor heat resistance and unsatisfactory interlayer adhesion strength, while the latter has the drawbacks that the noble metal paste is expensive and involves many complicated steps. As the above-mentioned high dielectric constant material, research is also being conducted on glasses containing BaTiO 3 crystals with a high dielectric constant (for example, Journal of American
Ceramic Society, Vol. 47, No. 3, 1964), the above-mentioned glasses have poor affinity with metals, and there is a practical problem in making them into composites with metals. In other words, the above-mentioned glass does not match metal plates such as steel plates and stainless steel plates in terms of thermal expansion characteristics and softening and melting temperatures.
It had no adhesion to these metal plates and could not be practically used in the production of the above-mentioned composites. SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned conventional drawbacks and to provide an enamel frit that forms a high dielectric constant material having good adhesion to a metal plate. And the above purpose contains a metal oxide consisting of BaO and/or SrO and TiO 2 in a total amount of 10 to 60% by weight,
and the molar ratio of the metal oxide and TiO 2 is 0.5 to 1.5.
This is achieved by the enamel frit of the present invention, which precipitates crystals with a high dielectric constant by being heat-treated. It is further preferable that the enamel frit has a body thermal expansion coefficient.
200 to 330×10 -7 (/°C), and has a softening and melting temperature of 500 to 700°C, and substantially does not contain high dielectric constant crystals before heat treatment,
For this purpose, the total amount of the above metal oxide and TiO 2 must be 25
~55% by weight, the molar ratio of the above metal oxide and TiO2 is 0.9-1.4, or the above metal oxide and
Glass components other than TiO 2 are SiO 2 15 to 45% by weight,
B2O3 10-30% by weight, Al2O3 10 % by weight or less,
10% by weight or less of one or more metal oxides selected from the group consisting of Na 2 O, K 2 O and Li 2 O;
It is preferable that the material contains 4 to 25% by weight of one or more metal oxides selected from the group consisting of CaO, ZnO, MgO and Sb 2 O 3 and 10% by weight or less of F. The present invention will be explained in detail below. An example of manufacturing the enamel frit of the present invention having the above composition will be described below. A metal oxide consisting of BaO and/or SrO (hereinafter referred to as MO) and a metal compound such as a metal oxide, metal hydroxide, or metal salt that donates TiO 2 are mixed at the above molar ratio, that is, MO/TiO 2 0.5~
1.5, preferably 0.9 to 1.4, or a calcined product of MO and TiO 2 with the above molar ratio, and then add other glass raw materials such as SiO 2 and Al 2 O 3 over high heat. sexual raw materials such as B 2 O 3 ,
Low-flame raw materials such as alkali metal oxides and alkaline earth metal oxides are combined with MO and TiO 2 in a total amount of 10 to 60.
Weight% (hereinafter simply referred to as %), preferably 25 to 55
%, and further desirably other glass raw materials are SiO 2 15-45%, B 2 O 3 10-30%,
10% or less of Al 2 O 3 , 10% or less of one or more metal oxides selected from the group consisting of Na 2 O, K 2 O and Li 2 O, CaO, ZnO, MgO and Sb 2 O 3 One or more metal oxides selected from the group consisting of 4 to 25% of metal oxide and 10% or less of F are mixed to give a glass composition, and the above mixture is heated at 1200 to 1300℃ for 50 minutes using the usual method for manufacturing glass. Heat to melt for ~60 minutes, then cool with water or air. In this way, the enamel frit of the present invention is obtained, but in this case it is desirable to cool it rapidly so that a large amount of crystals with a high dielectric constant produced from MO and TiO 2 do not precipitate in the glass. As mentioned above, in the present invention, MO+TiO 2
= 10 to 60%, MO/TiO 2 = 0.5 to 1.5 molar ratio is essential, and the reason is that MO + TiO 2 <
Enamel frit with a concentration of 10% has less precipitation of high dielectric constant crystal phase due to heat treatment, so no high dielectric constant material is formed, while MO + TiO 2 >60
%, the enamel frit has a melting working temperature of 1400
℃ or higher, which is impractical, and the composite metal cannot withstand such high temperatures. Furthermore, a high dielectric constant material cannot be obtained outside the range of 0.5<MO/TiO 2 <1.5. The enamel frit of the present invention, which has a body thermal expansion coefficient of 200 to 330×10 -7 (/℃) and a softening and melting temperature of 500 to 700℃, is compatible with general metal plates such as steel plates and stainless steel plates. A high dielectric constant material having particularly good adhesion is formed. Here, the softening melting temperature refers to the yield point when measuring the body thermal expansion coefficient. In order to provide the enamel frit of the present invention with the above-mentioned preferable body thermal expansion coefficient and softening melting temperature, the composition of the glass components other than MO and TiO 2 is adjusted as described above. MO,
The effects of each constituent element of the glass component other than TiO 2 and the reason for its limitation will be explained below. When SiO 2 <15%, the material is difficult to vitrify during enameled frit manufacturing, and when SiO 2 >45
%, the processing temperature required when applying to metal and fusing it becomes too high. When B 2 O 3 <10%, the above-mentioned treatment temperature similarly becomes too high, and when B 2 O 3 >30%, the water resistance of the resulting high dielectric constant material decreases, making it unsuitable for practical use. When Al 2 O 3 >10%, the treatment temperature becomes too high. When Na 2 O + K 2 O + Li 2 O>10%, the concentration of alkali metal ions with high mobility increases in the resulting high dielectric constant material, and the dielectric breakdown strength decreases. When CaO+ZnO+MgO+Sb 2 O 3 <4%, the treatment temperature becomes too high and the body thermal expansion coefficient becomes small. Also, CaO + ZnO + MgO +
When Sb 2 O 3 >25%, the water resistance of the resulting high dielectric constant material decreases, making it unsuitable for practical use. When F>10%, phase separation occurs during melting by heat treatment. It goes without saying that in addition to the above-mentioned constituent elements, known compounds such as CoO and NiO may be further contained in order to improve adhesion to metals. An example of manufacturing a high dielectric constant material-metal composite using the enamel frit of the present invention will be described below. An aqueous slip is prepared by mixing the enamel frit obtained as described above with an electrolyte and an adhesive and pulverizing it in a conventional manner. The water-based slip obtained in this way is applied to a specified metal plate by a conventional method such as spraying, brush coating, flow coating, or dipping to give a coating of usually 100 to 100%.
Apply to a thickness of about 200μ and dry at room temperature or with slight heat. After that, the enamel frit is fused to the surface of the metal plate by heat treatment to a temperature higher than the softening melting temperature, and then, when appropriately cooled, high dielectric constant crystals generated from MO and TiO 2 are precipitated, and thus the composite is formed. You can get it. In addition to the above method, the enamel frit of the present invention can be applied to a metal plate.
A method of screen printing using ink made by mixing enamel frit with squeegee oil,
A method in which enamel frit is dispersed in a suitable medium and deposited by electrophoresis, a dry method in which enamel frit powder is deposited by dry spraying, electrostatic coating, fluidized dipping, etc. may be applied. In addition, in the dry method, if the metal plate is heated in advance to a temperature higher than the softening and melting temperature of the enamel frit, the enamel frit can be fused at the same time as it is applied. The dielectric constant of the high dielectric constant material formed in the above composite can be adjusted to a predetermined value by changing the cooling rate, maintaining a predetermined temperature for a predetermined time during the cooling process, or by reheating the above-mentioned material. This can be easily achieved by controlling the amount of high dielectric constant crystals precipitated. The reason why the enamel frit of the present invention exhibits good adhesion to metal plates is not clear, but the enamel frit of the present invention hardly contains high dielectric constant crystals before heat treatment, or even if it does, it contains only a small amount. Therefore, when applied to a metal plate and subjected to heat treatment, it is thought that better wetting is achieved compared to enamel frit containing a large amount of high dielectric constant crystals. Therefore, in the enameled frit of the present invention, the high dielectric constant crystal is MO.
It is desirable that the content is 40% or less of +TiO 2 , and of course it is most desirable that the above-mentioned high dielectric constant crystals are not included at all. Limiting the high dielectric constant crystal content in the enamel frit of the present invention as described above not only brings about good results in adhesion with metal, but also improves the dielectric constant of the high dielectric constant material by adjusting the heat treatment conditions. has the advantage of making it easier to adjust to the desired value. Examples for explaining the present invention in more detail will be described below. Example: Put the raw material mixture into a crucible and heat at 1200 to 1300℃ for 50 minutes.
The mixture was heated and melted for ~60 minutes, and the resulting melt was quenched by pouring it into water to obtain an enamel frit having the composition shown in Table 1. The enamel frit thus obtained is milled with water to prepare a slip in a conventional manner. The above slip is glazed to a thickness of about 100 to 200 μm on a mild steel plate and a stainless steel plate (50 x 50 x 1.4 mm) by a spray method. It was dried at room temperature and then heat treated at 950°C for 3 minutes. After the above heat treatment, it was cooled to 850°C, maintained at this temperature for 50 minutes, and then allowed to cool. The values of the dielectric constant of the high dielectric constant material obtained in this way, the body thermal expansion coefficient of the enamel frit, and the softening and melting temperature are
Shown in the table. In addition, in Tables 1 and 2, sample No. 1
-11 are examples of the present invention, and samples No. 12-13 are comparative examples. According to Table 2, Examples Nos. 1 to 11 of the present invention have much higher dielectric constants than Comparative Examples Nos. 12 to 13.

【表】【table】

【表】 また第1表試料No.1、4、6、9の組成のもの
を上記と同様に熱処理した後400℃/hrの速度で
冷却して得られた高誘電率体の誘電率を第3表に
示す。第3表においては850℃、50分間維持した
第2表のデータも併記した。
[Table] In addition, the dielectric constants of high dielectric constant materials obtained by heat-treating the compositions of Samples Nos. 1, 4, 6, and 9 in Table 1 in the same manner as above and cooling them at a rate of 400°C/hr are as follows: It is shown in Table 3. Table 3 also shows the data from Table 2, which was maintained at 850°C for 50 minutes.

【表】 第3表にみるように本発明のホウロウフリツト
からなる高誘電率体は熱処理条件によつて誘電率
を大巾に調節することが可能である。 更に第1表試料No.1の組成において、高誘電率
結晶含有量と熱処理後の軟鋼板との密着性との関
係を第4表に示す。
[Table] As shown in Table 3, the dielectric constant of the high dielectric constant material made of enameled frit of the present invention can be adjusted to a wide range by changing the heat treatment conditions. Furthermore, Table 4 shows the relationship between the high dielectric constant crystal content and the adhesion to the mild steel plate after heat treatment in the composition of Sample No. 1 in Table 1.

【表】 △:周囲に僅かにクラツクあり
×:剥離
第4表において、高誘電率結晶含有量は、種々
の熱処理条件によつて高誘電率結晶の析出量を変
化させたホウロウフリツト試料の線回折ピーク
強度より算出したものであり、密着性は上記種々
の高誘電率結晶の析出量を有するホウロウフリツ
トを軟鋼板に施して一定の熱処理を行なつた複合
体について評価した。 第4表をみると本発明のホウロウフリツトの高
誘電率結晶含有量が40%以下では密着性が良好で
あるが、40%を越えると密着性が低下することが
明らかである。 以上に述べたように本発明のホウロウフリツト
は金属に対して良好な密着性を有し、かつ高誘電
率体を形成するものであるから電子工業分野にお
いて極めて有用なものである。
[Table] △: Slight cracks around the periphery ×: Peeling In Table 4, the high dielectric constant crystal content is determined for the enamel frit samples in which the amount of high dielectric constant crystals precipitated was changed by various heat treatment conditions. The adhesion was calculated from the line diffraction peak intensity, and the adhesion was evaluated for composites obtained by applying enamel frits having various precipitated amounts of high dielectric constant crystals to mild steel plates and subjecting them to a certain heat treatment. Looking at Table 4, it is clear that when the high dielectric constant crystal content of the enamel frit of the present invention is 40% or less, the adhesion is good, but when it exceeds 40%, the adhesion is reduced. As described above, the enamel frit of the present invention has good adhesion to metals and forms a high dielectric constant material, so it is extremely useful in the electronic industry.

Claims (1)

【特許請求の範囲】 1 BaOおよび/またはSrOからなる金属酸化物
と、TiO2とを合量で10〜60重量%含み、かつ上
記金属酸化物とTiO2とのモル比が0.5〜1.5の範囲
内であるガラスであり、加熱処理されることによ
つて高誘電率の結晶を析出することを特徴とする
ホウロウフリツト。 2 体熱膨張係数が200〜330×10-7(/℃)であ
り、かつ軟化溶融温度が500〜700℃である特許請
求の範囲第1項記載のホウロウフリツト。 3 加熱処理前においては実質的に高誘電率の結
晶を含有しない特許請求の範囲第1項記載のホウ
ロウフリツト。 4 上記金属酸化物とTiO2の合量が25〜55重量
%、上記金属酸化物とTiO2とのモル比が0.9〜1.4
である特許請求の範囲第1項記載のホウロウフリ
ツト。 5 SiO215〜45重量%、B2O310〜30重量%、
Al2O310重量%以下、Na2O、K2OおよびLi2Oか
らなる群から選ばれた一種または二種以上の金属
酸化物10重量%以下、CaO、ZnO、MgOおよび
Sb2O3からなる群から選ばれた一種または二種以
上の金属酸化物4〜25重量%、F10重量%以下よ
りなるガラス成分を含む特許請求の範囲第2項、
第3項または第4項記載のホウロウフリツト。
[Claims] 1 A metal oxide comprising BaO and/or SrO and TiO 2 in a total amount of 10 to 60% by weight, and a molar ratio of the metal oxide to TiO 2 of 0.5 to 1.5. 1. Enamel frit, which is a glass within the above range, and is characterized by precipitating crystals with a high dielectric constant by being heat-treated. 2. The enamel frit according to claim 1, which has a thermal expansion coefficient of 200 to 330×10 -7 (/°C) and a softening and melting temperature of 500 to 700°C. 3. The enamel frit according to claim 1, which does not substantially contain high dielectric constant crystals before heat treatment. 4 The total amount of the metal oxide and TiO 2 is 25 to 55% by weight, and the molar ratio of the metal oxide to TiO 2 is 0.9 to 1.4.
The enamel frit according to claim 1. 5 SiO2 15-45% by weight, B2O3 10-30 % by weight,
Al 2 O 3 10% by weight or less, 10% by weight or less of one or more metal oxides selected from the group consisting of Na 2 O, K 2 O and Li 2 O, CaO, ZnO, MgO and
Claim 2 , which contains a glass component consisting of 4 to 25% by weight of one or more metal oxides selected from the group consisting of Sb 2 O 3 and 10% by weight or less of F;
Enamel frit according to item 3 or 4.
JP19641282A 1982-11-08 1982-11-08 Enamel frit Granted JPS5988340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19641282A JPS5988340A (en) 1982-11-08 1982-11-08 Enamel frit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19641282A JPS5988340A (en) 1982-11-08 1982-11-08 Enamel frit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1646590A Division JPH0375238A (en) 1990-01-26 1990-01-26 Enamel frit

Publications (2)

Publication Number Publication Date
JPS5988340A JPS5988340A (en) 1984-05-22
JPH0239463B2 true JPH0239463B2 (en) 1990-09-05

Family

ID=16357422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19641282A Granted JPS5988340A (en) 1982-11-08 1982-11-08 Enamel frit

Country Status (1)

Country Link
JP (1) JPS5988340A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523203U (en) * 1991-09-05 1993-03-26 富士電気化学株式会社 Programmable controller

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101857423B (en) * 2010-05-07 2013-01-16 清华大学 Light-emitting low-temperature co-fired ceramic powder, preparation method thereof and light-emitting low-temperature co-fired ceramic
CN101857375B (en) * 2010-05-11 2011-12-28 清华大学 Low-temperature co-fired glass ceramic composite material with adjustable dielectric constant and preparation method thereof
JPWO2014017610A1 (en) * 2012-07-27 2016-07-11 旭硝子株式会社 Glass for metal substrate coating and metal substrate with glass layer
CN110981200A (en) * 2019-12-31 2020-04-10 佛山市华力达材料科技有限公司 Microcrystalline glaze and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523203U (en) * 1991-09-05 1993-03-26 富士電気化学株式会社 Programmable controller

Also Published As

Publication number Publication date
JPS5988340A (en) 1984-05-22

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