JPH0229905A - Production of magnetic head - Google Patents
Production of magnetic headInfo
- Publication number
- JPH0229905A JPH0229905A JP5663388A JP5663388A JPH0229905A JP H0229905 A JPH0229905 A JP H0229905A JP 5663388 A JP5663388 A JP 5663388A JP 5663388 A JP5663388 A JP 5663388A JP H0229905 A JPH0229905 A JP H0229905A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- substrate
- sendust
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 229910000702 sendust Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 17
- 239000011162 core material Substances 0.000 abstract description 7
- 229910000808 amorphous metal alloy Inorganic materials 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract 2
- 230000004907 flux Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、VTRあるいは、DAT等に用いられる高保
磁力の磁気記録媒体に高密度に情報を記録するのに適し
た磁気ヘッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a magnetic head suitable for recording information at high density on a high coercive force magnetic recording medium used in a VTR, DAT, or the like.
従来の技術
高密度磁気記録再生においては、記録媒体の保磁力を大
きくすれば有利であることが一般に知られているが、高
保磁力の記録媒体に情報を記録するためには強い磁場が
必要となる。ヘッドコア材として主流をなすフェライト
材はその飽和磁束密度が4000〜5000ガウス程度
であるため、磁気記録媒体の保磁力が1000エルステ
ツドを越えて(ると記録が不十分になるという欠点があ
る。Conventional technology In high-density magnetic recording and reproduction, it is generally known that it is advantageous to increase the coercive force of the recording medium, but in order to record information on a recording medium with high coercive force, a strong magnetic field is required. Become. The ferrite material, which is the mainstream material for the head core, has a saturation magnetic flux density of about 4,000 to 5,000 Gauss, and therefore has the drawback that if the coercive force of the magnetic recording medium exceeds 1,000 Oersteds, recording becomes insufficient.
そこでフェライトよりも飽和磁束密度の大きいことがら
CoNbZr等の非晶質合金が利用されている。しかし
ながらこれらに於いても飽和磁束密度を大きくするため
には合金中のCo量を多くすることが必要となり、一方
Co11を多(すると非晶質合金の結晶化温度が低(な
り、熱処理工程の多いヘッドの製造に支障を来すという
ことで9000ガウス程度以下の飽和磁束密度を示す物
しかヘッドとして製造できていない。Therefore, amorphous alloys such as CoNbZr are used because they have a higher saturation magnetic flux density than ferrite. However, even in these cases, in order to increase the saturation magnetic flux density, it is necessary to increase the amount of Co in the alloy. Since this poses a problem in the manufacture of many heads, only heads with a saturation magnetic flux density of about 9000 Gauss or less can be manufactured.
そこでヘッドの材料として10000以上の飽和磁束密
度を示すセンダス)(FeAISl)合金が利用されつ
つある。(例えば、第9回日本応用磁気学会学術講演概
要集、29pA−2)。Therefore, FeAISl alloy, which exhibits a saturation magnetic flux density of 10,000 or more, is being used as a material for the head. (For example, 9th Japanese Society of Applied Magnetics Academic Lecture Abstracts, 29pA-2).
発明が解決しようとする課題
しかしながらセンダスト薄膜をスパッタ法などで形成す
る場合、基板の熱膨張係数、スパッタ時のアルゴンガス
圧力など種の条件を細かく検討しなければ基板と膜の間
に歪が生じて応力が発生し、その結果基板が反るなどし
て、このことがヘッドの製造に大きな支障となり、生産
分留まりを落としている。Problems to be Solved by the Invention However, when forming a sendust thin film using a sputtering method, distortion may occur between the substrate and the film unless various conditions such as the thermal expansion coefficient of the substrate and the argon gas pressure during sputtering are carefully considered. This creates stress, which causes the substrate to warp, which poses a major hindrance to the manufacture of heads, reducing production volume.
そこでここでは熱工程を加えることにより比較的容易に
膜と基板の反りを減少させることのできるセンダスト薄
膜の形成方法を示す。Here, we will show a method for forming a Sendust thin film that can relatively easily reduce the warping of the film and substrate by adding a thermal process.
課題を解決するための手段
スパッタ法によりセンダスト薄膜を作製する際に基板状
にまず非晶質合金薄膜を形成し、その後にヘッドのコア
材料となるべきセンダスト薄膜を形成する。Means for Solving the Problems When producing a sendust thin film by sputtering, an amorphous alloy thin film is first formed on a substrate, and then a sendust thin film to be used as the core material of the head is formed.
作用
この技術的手段の作用は次のようになる。非晶質薄膜は
一般に熱処理を加えると応力緩和を起こす、そこで基板
とセンダスト薄膜の間に形成された非晶質薄膜は熱処理
を施すと応力緩和を生じ、このために非晶質合金上に形
成されたセンダスト薄膜もこの影響を受ける。この結果
これら両薄膜境界付近での歪も減少し、基板の反り量も
著しく減少する。Effect The effect of this technical means is as follows. Amorphous thin films generally undergo stress relaxation when heat-treated, so the amorphous thin film formed between the substrate and Sendust thin film undergoes stress relaxation when heat-treated, and for this reason, it is difficult to form on an amorphous alloy. The Sendust thin film produced by this process is also affected by this. As a result, the strain near the boundary between these two thin films is also reduced, and the amount of warpage of the substrate is also significantly reduced.
実施例
以下本発明の磁気ヘッドの製造方法の一実施例について
、図面を用いて、詳細に説明する。EXAMPLE Hereinafter, an example of the method for manufacturing a magnetic head of the present invention will be described in detail with reference to the drawings.
第1図+al、 (blは、本発明により形成した磁気
ヘッドの一例を示す、第1図(alは非磁性基板を用い
た磁気ヘッドである。1は非磁性酸化物基板、2は非晶
質薄膜、3はヘッドのコア材となるセンダスト薄膜であ
る。第1図(ITJはギャップ近傍に高飽和磁束密度の
センダスト薄膜4を用い、それ以外の磁路はフェライト
5を用いたいわゆるMIGタイプのヘッドである。なお
6はガラスである。非晶質薄膜7がフェライト5とセン
ダスト4の間に形成されている。Figure 1+al, (bl is an example of a magnetic head formed according to the present invention, Figure 1al is a magnetic head using a non-magnetic substrate. 1 is a non-magnetic oxide substrate, 2 is an amorphous 3 is a Sendust thin film that serves as the core material of the head. Fig. 1 (ITJ uses a Sendust thin film 4 with a high saturation magnetic flux density near the gap, and the other magnetic paths are of the so-called MIG type using ferrite 5. The head 6 is made of glass. An amorphous thin film 7 is formed between the ferrite 5 and the sendust 4.
第2図ial〜+81は本発明により製造される磁気へ
ラドの製造方法の一例である。ここでは第1図(alO
タイプのヘッドの製造方法を示す。FIG. 2 ial~+81 is an example of a method for manufacturing a magnetic helad manufactured according to the present invention. Here, Figure 1 (alO
A method of manufacturing a type of head is shown.
第2図(alではまず1枚の非磁性セミラクス基板10
上に非晶質薄膜11をスパッタ法にて形成する。この非
晶質薄膜はこの後のヘッド製造工程の熱処理において結
晶化しない様な組成の物、例えばCo N b Z r
il膜でCoが74at0%程度含まれている物であ
る。またこの非晶質合金の膜厚は、0.3μm〜1.0
μmの範囲であれば問題はない、この後センダスト薄膜
12を所望の厚さ形成する。この際高周波領域での磁気
特性を向上させるために絶縁物(例えばSiO□13)
とセンダストとの積層構造にするのが望ましい。Figure 2 (in al, first one non-magnetic semilux substrate 10
An amorphous thin film 11 is formed thereon by sputtering. This amorphous thin film has a composition that will not crystallize during the heat treatment in the subsequent head manufacturing process, such as CoNbZr.
It is an il film containing about 74 at 0% Co. The film thickness of this amorphous alloy is 0.3 μm to 1.0 μm.
There is no problem if the thickness is within the μm range.After this, the sendust thin film 12 is formed to a desired thickness. At this time, an insulator (for example, SiO□13) is used to improve the magnetic properties in the high frequency range.
It is desirable to have a laminated structure of and sendust.
もう1枚の非磁性基板上にはガラス層14を1μm〜3
μm形成する。On the other non-magnetic substrate, a glass layer 14 is formed with a thickness of 1 μm to 3 μm.
μm is formed.
第2図山)では第2図+a)で作った2枚の基板を電気
炉の中で加熱加圧接着し、複合ブロック15を製造する
。この際温度は600℃程度、窒素雰囲気中で行うのが
望ましい。In Fig. 2 (Mount 2), the two substrates produced in Fig. 2 +a) are bonded together under heat and pressure in an electric furnace to produce a composite block 15. At this time, the temperature is preferably about 600° C., and it is preferable to carry out the process in a nitrogen atmosphere.
第2図(e)ではこの複合ブロックを短冊切断し、2本
のバー16.17を1組として、1本のバーには巻線溝
加工などを行う(11,13,14は図では省略)。In Fig. 2(e), this composite block is cut into strips, two bars 16 and 17 are made into a set, and each bar is machined with winding grooves (11, 13, and 14 are omitted in the figure). ).
第2図+dlでは2本のバー16.17の突合せ面18
.19(ギャップ面)を研磨した後、この面にS i
O2、ガウス(共に図では省略)を順にスパッタ法で形
成し、電気炉内で加圧加熱接着し、ヘッドバー20する
。このときの温度は工程第2図(blで行った接着がゆ
るまないようにこの温度より少し低い560℃くらいが
望ましい。In Figure 2+dl, the butt surface 18 of the two bars 16.17
.. After polishing 19 (gap surface), Si
O2 and Gauss (both omitted from the figure) are sequentially formed by sputtering, and bonded under pressure and heat in an electric furnace to form a head bar 20. The temperature at this time is preferably about 560°C, which is slightly lower than this temperature so that the bonding made in step 2 (bl) does not loosen.
第2図(e)ではヘッドパー20を適当に切断して磁気
ヘッドができあがる。In FIG. 2(e), the head par 20 is appropriately cut to complete a magnetic head.
なお第2図(al工程で用いられる非晶質薄膜はその後
の加圧加熱工程で結晶化しないものであればよい、した
がって第2図(bl、 (d)での温度が550℃程度
であけばCOを79at、%程度含むCoNbZr。It should be noted that the amorphous thin film used in the process shown in Figure 2 (al) should be one that does not crystallize in the subsequent pressure and heating process. For example, CoNbZr contains about 79 at% of CO.
CoNbTaZr等の非晶質薄膜が利用できる。またこ
の非晶質薄膜の軟磁気特性もここでは特に触れていない
が、例えばIMHzにて実効透磁率が500程度もあれ
ばその効果は十分である。Amorphous thin films such as CoNbTaZr can be used. Although the soft magnetic properties of this amorphous thin film are not particularly mentioned here, the effect is sufficient if the effective magnetic permeability is about 500 at IMHz, for example.
発明の効果
本発明による磁気ヘッドのコア材料製造方法により、例
えばVTR,DAT用ヘッドのコア材料としてセンダス
ト合金薄膜が利用でき、高飽和磁束密度の記録効率の優
れた磁気ヘッドを今までに比べて分留り良く製造できる
。Effects of the Invention By the method of manufacturing the core material of a magnetic head according to the present invention, a sendust alloy thin film can be used as the core material of, for example, a VTR or DAT head, and a magnetic head with high saturation magnetic flux density and excellent recording efficiency can be produced compared to the past. Can be manufactured in fractional distillation.
第1図(al、 (blは本発明の磁気ヘッドの斜視図
、第2(a)〜(elは本発明の磁気ヘッドの製造方法
の工程を示す。
1・・・・・・非磁性酸化物基板、2・・・・・・非晶
質薄膜、3・・・・・・センダスト膜。
代理人の氏名 弁理士 中尾敏男 はか1名図
/−−−シトa菫セ虹酸イL才初基板
4− センダスト膜
5− フエライト
手続補正書働式)
l事件の表示
昭和63年特許願第66633 号
発明の名称
磁気ヘッドの製造方法
補正をする者
事件との関係 特 許 出 願 大
佐 所 大阪府門真市大字門真1006番地名 称
(582)松下電器産業株式会社代表者 谷
井 昭 雄Fig. 1 (al, (bl) is a perspective view of the magnetic head of the present invention, and Fig. 2 (a) to (el) show the steps of the manufacturing method of the magnetic head of the present invention. 1...Nonmagnetic oxidation Material substrate, 2...Amorphous thin film, 3...Sendust film. Name of agent: Patent attorney Toshio Nakao Figure 1/---Cit a Sumise Niric acid L Indication of the case Patent application No. 66633 of 1988 Name of the invention Person who amends the manufacturing method of a magnetic head Relationship to the case Patent application Colonel Office 1006 Kadoma, Kadoma City, Osaka Prefecture Name
(582) Matsushita Electric Industrial Co., Ltd. Representative Tani
Akio I
Claims (1)
する際、基板上に非晶質薄膜を形成した後、その上にセ
ンダスト薄膜を形成することを特徴とする磁気ヘッドの
製造方法。(2)非晶質薄膜がスパッタ法を用いて形成
されることを特徴とする請求項第(1)項記載の磁気ヘ
ッドの製造方法。 (3)非晶質薄膜の主成分がCoNbZr、CoZrT
a、CoNbZrTaであり、磁気ヘッド製造後も結晶
化しないことを特徴とする請求項第(1)項または第(
2)項のいずれかに記載の磁気ヘッドの製造方法。[Scope of Claims] (1) A magnetic head characterized in that when producing a Sendust thin film to serve as the main core of the magnetic head, an amorphous thin film is formed on a substrate, and then a Sendust thin film is formed thereon. manufacturing method. (2) The method of manufacturing a magnetic head according to claim (1), wherein the amorphous thin film is formed using a sputtering method. (3) The main components of the amorphous thin film are CoNbZr and CoZrT
a, CoNbZrTa, and does not crystallize even after manufacturing the magnetic head.
2) The method for manufacturing a magnetic head according to any one of items 2).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5663388A JPH0229905A (en) | 1988-03-10 | 1988-03-10 | Production of magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5663388A JPH0229905A (en) | 1988-03-10 | 1988-03-10 | Production of magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0229905A true JPH0229905A (en) | 1990-01-31 |
Family
ID=13032719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5663388A Pending JPH0229905A (en) | 1988-03-10 | 1988-03-10 | Production of magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0229905A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6169646B1 (en) | 1998-11-18 | 2001-01-02 | Seagate Technology, Inc. | Magnetoresistive shield incorporating seedlayer for anisotropy enhancement |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134707A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Magnetic head |
JPS62222416A (en) * | 1986-03-24 | 1987-09-30 | Sharp Corp | Member for thin film magnetic film |
-
1988
- 1988-03-10 JP JP5663388A patent/JPH0229905A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134707A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Magnetic head |
JPS62222416A (en) * | 1986-03-24 | 1987-09-30 | Sharp Corp | Member for thin film magnetic film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6169646B1 (en) | 1998-11-18 | 2001-01-02 | Seagate Technology, Inc. | Magnetoresistive shield incorporating seedlayer for anisotropy enhancement |
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