JPH02228658A - Reduction stepper - Google Patents
Reduction stepperInfo
- Publication number
- JPH02228658A JPH02228658A JP1049494A JP4949489A JPH02228658A JP H02228658 A JPH02228658 A JP H02228658A JP 1049494 A JP1049494 A JP 1049494A JP 4949489 A JP4949489 A JP 4949489A JP H02228658 A JPH02228658 A JP H02228658A
- Authority
- JP
- Japan
- Prior art keywords
- washer
- reduction projection
- distortion aberration
- mask
- projection lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000009467 reduction Effects 0.000 title claims abstract description 33
- 230000004075 alteration Effects 0.000 claims abstract description 13
- 230000007246 mechanism Effects 0.000 claims description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は縮小投影型露光装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a reduction projection type exposure apparatus.
従来、この種の縮小投影型露光装置における縮小投影レ
ンズの歪曲収差補正は、縮小投影レンズとその上面に設
置されているマスクの間隔を金属ワッシャーの厚さを変
えることにより調整している。Conventionally, distortion aberration of a reduction projection lens in this type of reduction projection exposure apparatus is adjusted by adjusting the distance between the reduction projection lens and a mask installed on its upper surface by changing the thickness of a metal washer.
上述した従来の縮小投影レンズの歪曲収差補正をするに
あたって、縮小投影レンズとその上面に設置されている
マスクの間隔を金属ワッシャーの厚さを換えること、い
わゆるワッシャーを削り、あるいは厚いワッシャーを装
着することでｆ１整しているが、微量に削る技能を必要
とするばかりでなく、ワッシャーを着脱することによる
ｇｖｗがあるという欠点がある。In order to correct the distortion aberration of the conventional reduction projection lens mentioned above, the distance between the reduction projection lens and the mask installed on its upper surface is changed by changing the thickness of the metal washer, so-called cutting the washer, or installing a thick washer. This allows f1 adjustment, but it has the disadvantage that not only does it require the skill to shave a small amount, but also there is GVW due to attaching and detaching the washer.
本発明の目的は前記課題を解決しな縮小投影型露光装置
を提供することにある。An object of the present invention is to provide a reduction projection type exposure apparatus that does not solve the above problems.
上述した従来の装置に対し、本発明は金属ワッシャーと
圧電素子アクチュエータを使い、その測長には分解能の
高いレーザー干渉計を用いて、金属ワッシャーで粗補正
を行った後、圧電素子アクチュエータで微補正する二段
階に補正するという相違点を有する。In contrast to the conventional device described above, the present invention uses a metal washer and a piezoelectric actuator, and a high-resolution laser interferometer is used to measure the length.After coarse correction is performed using the metal washer, fine correction is performed using the piezoelectric actuator. The difference is that the correction is performed in two stages.
前記目的を達成するため、本発明は縮小投影しンズを通
してマスク上のパターンをウェハ上へ転写する縮小投影
型露光装置において、縮小投影レンズとその上面に設置
されている投影を目的とするマスクの間隔を圧電素子ア
クチュエータを用いて調整し、縮小投影レンズの歪曲収
差を補正する機構を有するものである。In order to achieve the above object, the present invention provides a reduction projection type exposure apparatus that transfers a pattern on a mask onto a wafer through a reduction projection lens, and includes a reduction projection lens and a mask installed on the upper surface thereof for the purpose of projection. It has a mechanism that adjusts the distance using a piezoelectric element actuator and corrects the distortion aberration of the reduction projection lens.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
（実施例１） 第１，２図は本発明の実施例１を示す図である。(Example 1) 1 and 2 are diagrams showing a first embodiment of the present invention.
第１図において、縮小投影レンズ８の歪曲収差補正は、
縮小投影レンズ８とその上面に設置されているマスク１
の間隔を調整することにより行うが、従来は金属ワッシ
ャーの厚みで補正していた。In FIG. 1, the distortion aberration correction of the reduction projection lens 8 is as follows.
Reduction projection lens 8 and mask 1 installed on its top surface
This is done by adjusting the spacing between the two, but conventionally this was corrected by the thickness of the metal washer.
１０は縮小投影露光装置本体、９はウェハステージであ
る１本発明は歪曲収差補正用ワッシャー７での補正を粗
補正とし、更にマスク１を直接乗せている４本の足しを
圧電素子アクチュエータ２により厚みを変化させること
で微補正を行う。Reference numeral 10 denotes the main body of the reduction projection exposure apparatus, and reference numeral 9 denotes a wafer stage. 1 In the present invention, the distortion correction washer 7 performs coarse correction, and the four additional rods on which the mask 1 is directly placed are replaced by the piezoelectric actuator 2. Fine correction is performed by changing the thickness.
第２図はマスク１を直接乗せる４本の足しの図であるが
、足しの中央部に圧電素子アクチュエータ２をサンドイ
ッチ構造で有する。更に圧電素子アクチュエータ２の上
側である移動部Ｌ＋に移動鏡３を設け、また移動のない
圧電素子アクチュエータ２の下側の固定部Ｌ２に固定ｆ
ｉ４を設ける。FIG. 2 is a diagram of four legs on which the mask 1 is directly placed, and the piezoelectric element actuator 2 is provided in a sandwich structure in the center of the legs. Furthermore, a movable mirror 3 is provided on the movable portion L+ above the piezoelectric actuator 2, and a movable mirror 3 is provided on the fixed portion L2 below the piezoelectric actuator 2 which does not move.
i4 is provided.
それぞれの、１ｊ１３．４にレーザーヘッド６からのレ
ーザー光線をあて、反射して来た光線をレーザー干渉計
システム５にて受光して干渉させ移動鏡の移動量を計測
する。このとき、レーザー干渉計システムは分解能０．
０２μｍクラスの高分解能タイプを使用する。上述の足
りを４個所設置し、第３図に示すようにそれぞれ各所の
歪曲収差が最も理想となる位置で圧電素子アクチュエー
タ２の動きを停止する。A laser beam from a laser head 6 is applied to each of 1j13.4, and the reflected beam is received by a laser interferometer system 5 and interfered with to measure the amount of movement of the movable mirror. At this time, the laser interferometer system has a resolution of 0.
A high-resolution type of 0.02 μm class is used. The above-mentioned feet are installed at four locations, and the movement of the piezoelectric element actuator 2 is stopped at each location where the distortion aberration at each location becomes the most ideal, as shown in FIG.
以上の一連動作により、縮小投影レンズ８の歪曲収差を
容易にかつ精度良く補正することができる。Through the series of operations described above, the distortion of the reduction projection lens 8 can be easily and accurately corrected.
（実施例２） 第４図は本発明の実施例２を示す図である。(Example 2) FIG. 4 is a diagram showing a second embodiment of the present invention.
前記実施例１ではマスク１側をｉＩｌ整させていたが、
本実施例は縮小投影レンズ８側を調整させるものである
。すなわち、縮小投影型露光装置における投影像面傾斜
補正は縮小投影レンズの傾きを補正することにより行わ
れるものであり、本実施例は歪曲収差補正用ワッシャー
７と圧電素子アクチュエータ２との組合せにより、実施
例１と同様に歪曲収差補正用ワッシャー７よる粗調整と
圧電素子アクチュエータ２によるｒａｍ整との二段階補
正を行うものである。In the first embodiment, the mask 1 side was adjusted to iIl, but
In this embodiment, the reduction projection lens 8 side is adjusted. That is, the projection image plane inclination correction in the reduction projection type exposure apparatus is performed by correcting the inclination of the reduction projection lens, and in this embodiment, the combination of the distortion aberration correction washer 7 and the piezoelectric element actuator 2, As in the first embodiment, two-step correction is performed: rough adjustment by the distortion aberration correction washer 7 and RAM adjustment by the piezoelectric actuator 2.
この実施例では測長に分解能０゜０２μｍレーザー干渉
計システムを用いて、容易にかつ精度良く補正すること
ができるという利点がある。This embodiment has the advantage that a laser interferometer system with a resolution of 0.02 μm is used for length measurement, and correction can be easily and accurately performed.
以上説明したように本発明は、縮小投影レンズの歪曲収
差を微補正する為に圧電素子アクチュエータ及びその移
動量を計測する目的の高分解能レーザー干渉計システム
、また前者の制御回路等の機能を有することにより、従
来の補正の様に高度な技能を必要とするワッシャー削り
、あるいはワッシャーの脱着・装着に伴なう縮小投影レ
ンズに対する悪影響を防ぐことができる効果がある。As explained above, the present invention has functions such as a piezoelectric element actuator and a high-resolution laser interferometer system for measuring the amount of movement thereof, as well as a control circuit for the former, in order to finely correct distortion aberration of a reduction projection lens. This has the effect of preventing washer shaving, which requires a high level of skill as in conventional correction, or the adverse effects on the reduction projection lens caused by attaching and detaching the washer.
第１図、第２図、第３図は本発明の一実施例を示す説明
図、第４図は本発明の実施例２を示す説明図である。
１・・・マスク
２・・・圧電素子アクチュエータ
３・・・移動鏡 ４・・・固定鏡５・・・レ
ーザー干渉計システム
６・・・レーザーヘッド
７・・・歪曲収差補正用ワッシャー
８・・・縮小投影レンズ
９・・・ウェハステージ
１０・・・縮小投影露光装置本体FIG. 1, FIG. 2, and FIG. 3 are explanatory diagrams showing one embodiment of the present invention, and FIG. 4 is an explanatory diagram showing a second embodiment of the present invention. 1... Mask 2... Piezoelectric element actuator 3... Movable mirror 4... Fixed mirror 5... Laser interferometer system 6... Laser head 7... Distortion aberration correction washer 8...・Reduction projection lens 9...Wafer stage 10...Reduction projection exposure apparatus main body
Claims (1)
ェハ上へ転写する縮小投影型露光装置において、縮小投
影レンズとその上面に設置されている投影を目的とする
マスクの間隔を圧電素子アクチュエータを用いて調整し
、縮小投影レンズの歪曲収差を補正する機構を有するこ
とを特徴とする縮小投影型露光装置。(1) In a reduction projection type exposure apparatus that transfers a pattern on a mask onto a wafer through a reduction projection lens, a piezoelectric element actuator is used to adjust the distance between the reduction projection lens and the mask for projection, which is installed on the top surface of the reduction projection lens. 1. A reduction projection type exposure apparatus comprising a mechanism for adjusting and correcting distortion aberration of a reduction projection lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1049494A JPH02228658A (en) | 1989-03-01 | 1989-03-01 | Reduction stepper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1049494A JPH02228658A (en) | 1989-03-01 | 1989-03-01 | Reduction stepper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02228658A true JPH02228658A (en) | 1990-09-11 |
Family
ID=12832702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1049494A Pending JPH02228658A (en) | 1989-03-01 | 1989-03-01 | Reduction stepper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02228658A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014079135A (en) * | 2012-10-12 | 2014-05-01 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component conveyance device, electronic component inspection device, liquid feeding pump, printer, electronic clock, projection apparatus, conveyance device |
| JP2014079134A (en) * | 2012-10-12 | 2014-05-01 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component conveyance device, electronic component inspection device, liquid feeding pump, printer, electronic clock, projection apparatus, conveyance device |
| JP2014082874A (en) * | 2012-10-17 | 2014-05-08 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component carrier device, electronic component inspection device, liquid feeding pump, printer, electronic timepiece, projection device, and carrier device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5255472A (en) * | 1975-10-31 | 1977-05-06 | Thomson Csf | Mask photo repeater |
| JPS58118648A (en) * | 1982-01-08 | 1983-07-14 | Seiko Epson Corp | Mask for x-ray exposure |
| JPS5935949B2 (en) * | 1975-12-18 | 1984-08-31 | ニツポンゼオン カブシキガイシヤ | Retsukabou Shizai |
-
1989
- 1989-03-01 JP JP1049494A patent/JPH02228658A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5255472A (en) * | 1975-10-31 | 1977-05-06 | Thomson Csf | Mask photo repeater |
| JPS5935949B2 (en) * | 1975-12-18 | 1984-08-31 | ニツポンゼオン カブシキガイシヤ | Retsukabou Shizai |
| JPS58118648A (en) * | 1982-01-08 | 1983-07-14 | Seiko Epson Corp | Mask for x-ray exposure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014079135A (en) * | 2012-10-12 | 2014-05-01 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component conveyance device, electronic component inspection device, liquid feeding pump, printer, electronic clock, projection apparatus, conveyance device |
| JP2014079134A (en) * | 2012-10-12 | 2014-05-01 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component conveyance device, electronic component inspection device, liquid feeding pump, printer, electronic clock, projection apparatus, conveyance device |
| JP2014082874A (en) * | 2012-10-17 | 2014-05-08 | Seiko Epson Corp | Piezoelectric actuator, robot hand, robot, electronic component carrier device, electronic component inspection device, liquid feeding pump, printer, electronic timepiece, projection device, and carrier device |
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